CN110612598B - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
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- CN110612598B CN110612598B CN201880011097.2A CN201880011097A CN110612598B CN 110612598 B CN110612598 B CN 110612598B CN 201880011097 A CN201880011097 A CN 201880011097A CN 110612598 B CN110612598 B CN 110612598B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 129
- 239000012212 insulator Substances 0.000 claims description 66
- 210000000746 body region Anatomy 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 18
- 239000010408 film Substances 0.000 description 50
- 230000000052 comparative effect Effects 0.000 description 25
- 230000008878 coupling Effects 0.000 description 23
- 238000010168 coupling process Methods 0.000 description 23
- 238000005859 coupling reaction Methods 0.000 description 23
- 230000005684 electric field Effects 0.000 description 15
- 230000000694 effects Effects 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018078235 | 2018-04-16 | ||
JP2018-078235 | 2018-04-16 | ||
PCT/JP2018/040887 WO2019202760A1 (ja) | 2018-04-16 | 2018-11-02 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110612598A CN110612598A (zh) | 2019-12-24 |
CN110612598B true CN110612598B (zh) | 2023-02-14 |
Family
ID=68239424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201880011097.2A Active CN110612598B (zh) | 2018-04-16 | 2018-11-02 | 半导体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10847610B2 (zh) |
JP (1) | JP7129408B2 (zh) |
CN (1) | CN110612598B (zh) |
WO (1) | WO2019202760A1 (zh) |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2605860B2 (ja) * | 1989-03-22 | 1997-04-30 | 富士電機株式会社 | 高耐圧素子を含む半導体装置 |
JPH0783048B2 (ja) | 1989-11-22 | 1995-09-06 | 三菱電機株式会社 | 半導体装置における電界集中防止構造およびその形成方法 |
US5204545A (en) | 1989-11-22 | 1993-04-20 | Mitsubishi Denki Kabushiki Kaisha | Structure for preventing field concentration in semiconductor device and method of forming the same |
JP2556175B2 (ja) | 1990-06-12 | 1996-11-20 | 三菱電機株式会社 | 半導体装置における電界集中防止構造 |
JP2739004B2 (ja) | 1992-01-16 | 1998-04-08 | 三菱電機株式会社 | 半導体装置 |
JPH08330579A (ja) * | 1995-05-31 | 1996-12-13 | Matsushita Electric Works Ltd | 横型半導体装置 |
JP3495498B2 (ja) * | 1996-03-15 | 2004-02-09 | 松下電工株式会社 | 半導体装置 |
JP3796998B2 (ja) | 1999-02-19 | 2006-07-12 | 松下電器産業株式会社 | 高耐圧半導体装置 |
JP4797225B2 (ja) * | 1999-05-27 | 2011-10-19 | 富士電機株式会社 | 半導体装置 |
US6750506B2 (en) | 1999-12-17 | 2004-06-15 | Matsushita Electric Industrial Co., Ltd. | High-voltage semiconductor device |
JP3425131B2 (ja) | 1999-12-17 | 2003-07-07 | 松下電器産業株式会社 | 高耐圧半導体装置 |
JP4023062B2 (ja) | 2000-03-03 | 2007-12-19 | 松下電器産業株式会社 | 半導体装置 |
JP3654872B2 (ja) | 2001-06-04 | 2005-06-02 | 松下電器産業株式会社 | 高耐圧半導体装置 |
KR100535062B1 (ko) | 2001-06-04 | 2005-12-07 | 마츠시타 덴끼 산교 가부시키가이샤 | 고내압 반도체장치 |
JP3659195B2 (ja) * | 2001-06-18 | 2005-06-15 | サンケン電気株式会社 | 半導体装置及びその製造方法 |
US7125777B2 (en) * | 2004-07-15 | 2006-10-24 | Fairchild Semiconductor Corporation | Asymmetric hetero-doped high-voltage MOSFET (AH2MOS) |
JP2006237474A (ja) * | 2005-02-28 | 2006-09-07 | Matsushita Electric Ind Co Ltd | 半導体デバイス |
JP4973238B2 (ja) * | 2007-02-28 | 2012-07-11 | 三菱電機株式会社 | 半導体装置 |
JP5487852B2 (ja) * | 2008-09-30 | 2014-05-14 | サンケン電気株式会社 | 半導体装置 |
JP2010258355A (ja) * | 2009-04-28 | 2010-11-11 | Sharp Corp | 半導体装置及びその製造方法 |
JP2011049424A (ja) * | 2009-08-28 | 2011-03-10 | Sony Corp | 半導体デバイス |
DE102011076610A1 (de) * | 2010-06-04 | 2011-12-08 | Denso Corporation | Stromsensor, inverterschaltung und diese aufweisende halbleitervorrichtung |
US8304830B2 (en) * | 2010-06-10 | 2012-11-06 | Macronix International Co., Ltd. | LDPMOS structure for enhancing breakdown voltage and specific on resistance in biCMOS-DMOS process |
JP5718103B2 (ja) * | 2011-03-07 | 2015-05-13 | 株式会社 日立パワーデバイス | 半導体装置 |
US20130277741A1 (en) * | 2012-04-23 | 2013-10-24 | Globalfoundries Singapore Pte Ltd | Ldmos device with field effect structure to control breakdown voltage, and methods of making such a device |
JP5936513B2 (ja) * | 2012-10-12 | 2016-06-22 | 三菱電機株式会社 | 横型高耐圧トランジスタの製造方法 |
JP6030923B2 (ja) * | 2012-11-09 | 2016-11-24 | シャープ株式会社 | 半導体装置、及びその製造方法 |
JP6244177B2 (ja) * | 2013-11-12 | 2017-12-06 | 日立オートモティブシステムズ株式会社 | 半導体装置 |
JP6229646B2 (ja) * | 2013-12-20 | 2017-11-15 | 株式会社デンソー | 半導体装置 |
US9460926B2 (en) * | 2014-06-30 | 2016-10-04 | Alpha And Omega Semiconductor Incorporated | Forming JFET and LDMOS transistor in monolithic power integrated circuit using deep diffusion regions |
JP6388509B2 (ja) * | 2014-08-19 | 2018-09-12 | ラピスセミコンダクタ株式会社 | 半導体装置および半導体装置の製造方法 |
US9761668B2 (en) * | 2015-05-08 | 2017-09-12 | Rohm Co., Ltd. | Semiconductor device |
JP6718733B2 (ja) * | 2015-05-08 | 2020-07-08 | ローム株式会社 | 半導体装置 |
US9461046B1 (en) * | 2015-12-18 | 2016-10-04 | Texas Instruments Incorporated | LDMOS device with graded body doping |
-
2018
- 2018-11-02 CN CN201880011097.2A patent/CN110612598B/zh active Active
- 2018-11-02 JP JP2019525022A patent/JP7129408B2/ja active Active
- 2018-11-02 WO PCT/JP2018/040887 patent/WO2019202760A1/ja active Application Filing
-
2019
- 2019-08-01 US US16/529,564 patent/US10847610B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2019202760A1 (ja) | 2019-10-24 |
CN110612598A (zh) | 2019-12-24 |
US20190355809A1 (en) | 2019-11-21 |
JP7129408B2 (ja) | 2022-09-01 |
US10847610B2 (en) | 2020-11-24 |
JPWO2019202760A1 (ja) | 2021-03-11 |
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