CN110597024B - 防止污渍的光刻胶剥离剂组合物及平板显示器基板的制法 - Google Patents
防止污渍的光刻胶剥离剂组合物及平板显示器基板的制法 Download PDFInfo
- Publication number
- CN110597024B CN110597024B CN201910788185.XA CN201910788185A CN110597024B CN 110597024 B CN110597024 B CN 110597024B CN 201910788185 A CN201910788185 A CN 201910788185A CN 110597024 B CN110597024 B CN 110597024B
- Authority
- CN
- China
- Prior art keywords
- group
- photoresist stripper
- stripper composition
- composition
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 69
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 67
- 239000000758 substrate Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 title description 19
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 claims abstract description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 32
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000005260 corrosion Methods 0.000 claims abstract description 16
- 239000000126 substance Substances 0.000 claims abstract description 15
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 13
- 238000005192 partition Methods 0.000 claims abstract description 13
- 239000002798 polar solvent Substances 0.000 claims abstract description 13
- 150000007514 bases Chemical class 0.000 claims abstract description 9
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 7
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims abstract description 5
- 230000007797 corrosion Effects 0.000 claims description 13
- -1 lactone compounds Chemical class 0.000 claims description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000003112 inhibitor Substances 0.000 claims description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 4
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 4
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 claims description 3
- 150000001412 amines Chemical class 0.000 claims description 3
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 claims description 3
- 150000004649 carbonic acid derivatives Chemical class 0.000 claims description 3
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 3
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 3
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 claims description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 2
- 229910019142 PO4 Inorganic materials 0.000 claims description 2
- 125000002252 acyl group Chemical group 0.000 claims description 2
- 125000003545 alkoxy group Chemical group 0.000 claims description 2
- 125000003282 alkyl amino group Chemical group 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 125000004414 alkyl thio group Chemical group 0.000 claims description 2
- 125000003277 amino group Chemical group 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 125000003118 aryl group Chemical group 0.000 claims description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 2
- 125000004181 carboxyalkyl group Chemical group 0.000 claims description 2
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 2
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 2
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 125000000623 heterocyclic group Chemical group 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 2
- 150000004040 pyrrolidinones Chemical class 0.000 claims description 2
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 2
- 125000002467 phosphate group Chemical class [H]OP(=O)(O[H])O[*] 0.000 claims 2
- CAAMSDWKXXPUJR-UHFFFAOYSA-N 3,5-dihydro-4H-imidazol-4-one Chemical class O=C1CNC=N1 CAAMSDWKXXPUJR-UHFFFAOYSA-N 0.000 claims 1
- 235000021317 phosphate Nutrition 0.000 claims 1
- 239000008367 deionised water Substances 0.000 description 15
- 229910021641 deionized water Inorganic materials 0.000 description 15
- 239000010949 copper Substances 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 125000001841 imino group Chemical group [H]N=* 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000003405 preventing effect Effects 0.000 description 6
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 5
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 4
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 description 4
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 3
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 3
- SJRJJKPEHAURKC-UHFFFAOYSA-N N-Methylmorpholine Chemical compound CN1CCOCC1 SJRJJKPEHAURKC-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 230000003373 anti-fouling effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 3
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 description 3
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- HRWADRITRNUCIY-UHFFFAOYSA-N 2-(2-propan-2-yloxyethoxy)ethanol Chemical compound CC(C)OCCOCCO HRWADRITRNUCIY-UHFFFAOYSA-N 0.000 description 2
- KDSNLYIMUZNERS-UHFFFAOYSA-N 2-methylpropanamine Chemical compound CC(C)CN KDSNLYIMUZNERS-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- QCOGKXLOEWLIDC-UHFFFAOYSA-N N-methylbutylamine Chemical compound CCCCNC QCOGKXLOEWLIDC-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- LCEDQNDDFOCWGG-UHFFFAOYSA-N morpholine-4-carbaldehyde Chemical compound O=CN1CCOCC1 LCEDQNDDFOCWGG-UHFFFAOYSA-N 0.000 description 2
- GVWISOJSERXQBM-UHFFFAOYSA-N n-methylpropan-1-amine Chemical compound CCCNC GVWISOJSERXQBM-UHFFFAOYSA-N 0.000 description 2
- XHFGWHUWQXTGAT-UHFFFAOYSA-N n-methylpropan-2-amine Chemical compound CNC(C)C XHFGWHUWQXTGAT-UHFFFAOYSA-N 0.000 description 2
- DPBLXKKOBLCELK-UHFFFAOYSA-N pentan-1-amine Chemical compound CCCCCN DPBLXKKOBLCELK-UHFFFAOYSA-N 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- NFJSYLMJBNUDNG-UHFFFAOYSA-N 1,3-dipropylimidazolidin-2-one Chemical compound CCCN1CCN(CCC)C1=O NFJSYLMJBNUDNG-UHFFFAOYSA-N 0.000 description 1
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 1
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 1
- IQXXEPZFOOTTBA-UHFFFAOYSA-N 1-benzylpiperazine Chemical compound C=1C=CC=CC=1CN1CCNCC1 IQXXEPZFOOTTBA-UHFFFAOYSA-N 0.000 description 1
- HPUIQFXZXVKZBN-UHFFFAOYSA-N 1-butoxy-n,n-dimethylmethanamine Chemical compound CCCCOCN(C)C HPUIQFXZXVKZBN-UHFFFAOYSA-N 0.000 description 1
- CMZQPQQRGBOLHN-UHFFFAOYSA-N 1-methoxy-2-methylpropan-2-amine Chemical compound COCC(C)(C)N CMZQPQQRGBOLHN-UHFFFAOYSA-N 0.000 description 1
- YFTNTMQKPLVKFQ-UHFFFAOYSA-N 1-methoxy-n,n-dimethylmethanamine Chemical compound COCN(C)C YFTNTMQKPLVKFQ-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 1
- GZMAAYIALGURDQ-UHFFFAOYSA-N 2-(2-hexoxyethoxy)ethanol Chemical compound CCCCCCOCCOCCO GZMAAYIALGURDQ-UHFFFAOYSA-N 0.000 description 1
- SDMNEUXIWBRMPK-UHFFFAOYSA-N 2-(2-methylpiperazin-1-yl)ethanol Chemical compound CC1CNCCN1CCO SDMNEUXIWBRMPK-UHFFFAOYSA-N 0.000 description 1
- YINZGXSSYYFXEY-UHFFFAOYSA-N 2-(diethylaminomethoxy)ethanol Chemical compound CCN(CC)COCCO YINZGXSSYYFXEY-UHFFFAOYSA-N 0.000 description 1
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 description 1
- KKFDCBRMNNSAAW-UHFFFAOYSA-N 2-(morpholin-4-yl)ethanol Chemical compound OCCN1CCOCC1 KKFDCBRMNNSAAW-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- YENSVULFMBQEHJ-UHFFFAOYSA-N 2-[2-hydroxyethyl(methoxymethyl)amino]ethanol Chemical compound COCN(CCO)CCO YENSVULFMBQEHJ-UHFFFAOYSA-N 0.000 description 1
- ZEHHJSJCLNQQRH-UHFFFAOYSA-N 2-amino-1-butoxybutan-2-ol Chemical compound CCC(O)(N)COCCCC ZEHHJSJCLNQQRH-UHFFFAOYSA-N 0.000 description 1
- NLCWFPMDXYWDOQ-UHFFFAOYSA-N 2-amino-1-methoxybutan-2-ol Chemical compound CCC(O)(N)COC NLCWFPMDXYWDOQ-UHFFFAOYSA-N 0.000 description 1
- BKMMTJMQCTUHRP-UHFFFAOYSA-N 2-aminopropan-1-ol Chemical compound CC(N)CO BKMMTJMQCTUHRP-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- NJBCRXCAPCODGX-UHFFFAOYSA-N 2-methyl-n-(2-methylpropyl)propan-1-amine Chemical compound CC(C)CNCC(C)C NJBCRXCAPCODGX-UHFFFAOYSA-N 0.000 description 1
- JOMNTHCQHJPVAZ-UHFFFAOYSA-N 2-methylpiperazine Chemical compound CC1CNCCN1 JOMNTHCQHJPVAZ-UHFFFAOYSA-N 0.000 description 1
- WFCSWCVEJLETKA-UHFFFAOYSA-N 2-piperazin-1-ylethanol Chemical compound OCCN1CCNCC1 WFCSWCVEJLETKA-UHFFFAOYSA-N 0.000 description 1
- HCGFUIQPSOCUHI-UHFFFAOYSA-N 2-propan-2-yloxyethanol Chemical compound CC(C)OCCO HCGFUIQPSOCUHI-UHFFFAOYSA-N 0.000 description 1
- YCGHZPCZCOSQKQ-UHFFFAOYSA-N 3-(2-ethylhexoxy)-n,n-dimethylpropanamide Chemical compound CCCCC(CC)COCCC(=O)N(C)C YCGHZPCZCOSQKQ-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- LVYXPOCADCXMLP-UHFFFAOYSA-N 3-butoxy-n,n-dimethylpropanamide Chemical compound CCCCOCCC(=O)N(C)C LVYXPOCADCXMLP-UHFFFAOYSA-N 0.000 description 1
- LBVMWHCOFMFPEG-UHFFFAOYSA-N 3-methoxy-n,n-dimethylpropanamide Chemical compound COCCC(=O)N(C)C LBVMWHCOFMFPEG-UHFFFAOYSA-N 0.000 description 1
- VZKSLWJLGAGPIU-UHFFFAOYSA-N 3-morpholin-4-ylpropan-1-ol Chemical compound OCCCN1CCOCC1 VZKSLWJLGAGPIU-UHFFFAOYSA-N 0.000 description 1
- UIKUBYKUYUSRSM-UHFFFAOYSA-N 3-morpholinopropylamine Chemical compound NCCCN1CCOCC1 UIKUBYKUYUSRSM-UHFFFAOYSA-N 0.000 description 1
- BLFRQYKZFKYQLO-UHFFFAOYSA-N 4-aminobutan-1-ol Chemical compound NCCCCO BLFRQYKZFKYQLO-UHFFFAOYSA-N 0.000 description 1
- HVCNXQOWACZAFN-UHFFFAOYSA-N 4-ethylmorpholine Chemical compound CCN1CCOCC1 HVCNXQOWACZAFN-UHFFFAOYSA-N 0.000 description 1
- RJWLLQWLBMJCFD-UHFFFAOYSA-N 4-methylpiperazin-1-amine Chemical compound CN1CCN(N)CC1 RJWLLQWLBMJCFD-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229920001174 Diethylhydroxylamine Polymers 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 1
- PVCJKHHOXFKFRP-UHFFFAOYSA-N N-acetylethanolamine Chemical compound CC(=O)NCCO PVCJKHHOXFKFRP-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-O N-dimethylethanolamine Chemical compound C[NH+](C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-O 0.000 description 1
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 description 1
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 125000005262 alkoxyamine group Chemical group 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 description 1
- 229920006125 amorphous polymer Polymers 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- FVCOIAYSJZGECG-UHFFFAOYSA-N diethylhydroxylamine Chemical compound CCN(O)CC FVCOIAYSJZGECG-UHFFFAOYSA-N 0.000 description 1
- 229940043279 diisopropylamine Drugs 0.000 description 1
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 150000008624 imidazolidinones Chemical class 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QKYWADPCTHTJHQ-UHFFFAOYSA-N n,2-dimethylpropan-1-amine Chemical compound CNCC(C)C QKYWADPCTHTJHQ-UHFFFAOYSA-N 0.000 description 1
- RHSSTVUDNMHOQR-UHFFFAOYSA-N n,n-dimethyl-1-(2-methylpropoxy)methanamine Chemical compound CC(C)COCN(C)C RHSSTVUDNMHOQR-UHFFFAOYSA-N 0.000 description 1
- DAZXVJBJRMWXJP-UHFFFAOYSA-N n,n-dimethylethylamine Chemical compound CCN(C)C DAZXVJBJRMWXJP-UHFFFAOYSA-N 0.000 description 1
- OOHAUGDGCWURIT-UHFFFAOYSA-N n,n-dipentylpentan-1-amine Chemical compound CCCCCN(CCCCC)CCCCC OOHAUGDGCWURIT-UHFFFAOYSA-N 0.000 description 1
- KDCHKULYGWACNY-UHFFFAOYSA-N n-(butoxymethyl)-n-ethylethanamine Chemical compound CCCCOCN(CC)CC KDCHKULYGWACNY-UHFFFAOYSA-N 0.000 description 1
- GNVRJGIVDSQCOP-UHFFFAOYSA-N n-ethyl-n-methylethanamine Chemical compound CCN(C)CC GNVRJGIVDSQCOP-UHFFFAOYSA-N 0.000 description 1
- UVBMZKBIZUWTLV-UHFFFAOYSA-N n-methyl-n-propylpropan-1-amine Chemical compound CCCN(C)CCC UVBMZKBIZUWTLV-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229940100684 pentylamine Drugs 0.000 description 1
- YZTJYBJCZXZGCT-UHFFFAOYSA-N phenylpiperazine Chemical compound C1CNCCN1C1=CC=CC=C1 YZTJYBJCZXZGCT-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- BHRZNVHARXXAHW-UHFFFAOYSA-N sec-butylamine Chemical compound CCC(C)N BHRZNVHARXXAHW-UHFFFAOYSA-N 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 1
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/30—Inkjet printing inks
- C09D11/38—Inkjet printing inks characterised by non-macromolecular additives other than solvents, pigments or dyes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
本发明公开了一种防止污渍的光刻胶剥离剂组合物以及一种制造平板显示器基板的方法,所述光刻胶剥离剂组合物包含:(a)由下面的化学式1所表示的二醇醚;(b)碱性化合物;(c)非质子性极性溶剂;以及(d)抗腐蚀剂:R‑(OCH2CH2)n‑OH (1)其中,R是甲基或乙基,且n是2或3的整数,其中,所述二醇醚具有由下面的等式1计算出的负值的辛醇/水分配系数(LogP):Kow=Co/CwCo:溶质在辛醇中的浓度Cw:溶质在水中的浓度LogP(分配系数)=Log(Kow)。
Description
本申请是申请日为2013年10月31日,申请号为201310530582.X,发明名称为“防止污渍的光刻胶剥离剂组合物及平板显示器基板的制法”的发明专利申请的分案申请。
技术领域
本发明涉及一种光刻胶剥离剂组合物,该光刻胶剥离剂组合物在制造平板显示器基板的过程中具有优异的清洁能力而且具有防止剥离过程中形成的污渍的优异能力。
背景技术
随着对高分辨率平板显示器需求的增加,已经做出了努力来增加每单位面积的像素数目。根据这种趋势,需要减小布线的宽度,因此引入干蚀刻工艺,从而使得工艺条件更加严格。而且,根据平板显示器的尺寸增加,布线的信号速度也需要增加,因此电阻系数比铝低的铜实际上用作布线的原材料。因此,在剥离过程中,即在除去光刻胶的过程中,必须使用高性能的剥离剂。具体地,需要的是除去在干蚀刻之后所形成的残渣并防止金属布线的腐蚀的高水平剥离性能。尤其,需要剥离剂具有除去干蚀刻后所形成的残渣的能力以及针对铜和铝的防锈性能。此外,剥离剂应是经济上有益的,使得它能够处理许多片基板。已有公开的新技术来满足上述要求。
例如,韩国专利申请2006-0028523公开了不引起金属布线腐蚀的光刻胶剥离剂。然而,这种光刻胶剥离剂是有问题的,因为它包括引起严重污渍的特定二醇醚,所以在剥离过程后它引起形成在基板上的污渍。
发明内容
因此,作出本发明以解决上述问题,本发明的目的是提供一种光刻胶剥离剂组合物,该光刻胶剥离剂组合物具有在制造平板显示器基板的过程中除去由干式蚀刻/湿式蚀刻所形成的光刻胶残渣的优异能力并能够在剥离过程中防止污渍形成在基板上。
为了实现上述目的,本发明的一个方面提供防止污渍的光刻胶剥离剂组合物,包含:(a)由下面的化学式1所表示的二醇醚;(b)碱性化合物;(c)非质子性极性溶剂;以及(d)抗腐蚀剂:
R-(OCH2CH2)n-OH (1)
其中,R是甲基或乙基,且n是2或3的整数,其中,所述二醇醚具有由下面的等式1计算出的负值的辛醇/水分配系数(LogP):
Kow=Co/Cw
Co:溶质在辛醇中的浓度
Cw:溶质在水中的浓度
LogP(分配系数)=Log(Kow)。
本发明的另一个方面提供制造平板显示器基板的方法,包括使用上述光刻胶剥离剂组合物来清洁平板显示器基板的步骤。
附图说明
从下面结合附图的详细描述中,本发明上述及其它的目的、特征和优势将被更清楚地理解,其中:
图1示出根据测试例1使用卤素灯来观察铜(Cu)基板的结果的照片,其中,(a)示出使用实施例3的光刻胶剥离剂组合物(光刻胶的含量:0.5%)来处理铜基板的结果;和(b)示出使用比较例2的光刻胶剥离剂组合物(光刻胶的含量:0.3%)来处理铜基板的结果;以及
图2是示出根据测试例1使用光学显微镜来观察铜(Cu)基板的结果的照片,其中(a)示出使用实施例4的光刻胶剥离剂组合物(光刻胶的含量:1%)来处理铜基板的结果;和(b)示出使用比较例5的光刻胶剥离剂组合物(光刻胶的含量:0.3%)来处理铜基板的结果。
具体实施方式
在下文中,本发明将被详细描述。
本发明提供防止污渍的光刻胶剥离剂组合物,包含:(a)由下面的化学式1所表示的二醇醚;(b)碱性化合物;(c)非质子性极性溶剂;以及(d)抗腐蚀剂:
R-(OCH2CH2)n-OH (1)
其中,R是甲基或乙基,且n是2或3的整数,
其中,所述二醇醚具有由下面的等式1计算出的负值的辛醇/水分配系数(LogP):
Kow=Co/Cw
Co:溶质在辛醇中的浓度
Cw:溶质在水中的浓度
LogP(分配系数)=Log(Kow)。
本发明的光刻胶剥离剂组合物还可以包含:(e)去离子水。
在下文中,组成上述光刻胶剥离剂组合物的每种组分将被详细描述。
(a)二醇醚
由下面的化学式1所表示的二醇醚能有效地防止污渍。
R-(OCH2CH2)n-OH (1)
在本文中,R是甲基或乙基,且n是2或3的整数。
由上面的化学式1所表示的二醇醚的例子可以包括二乙二醇单甲醚、二乙二醇***、三乙二醇单甲醚和三乙二醇单***。它们可以被单独使用或以两种或更多种的混合物使用。
同时,在用于TFT的剥离剂中所通常使用的常规二醇醚的例子可以包括乙二醇单异丙醚、乙二醇单丁醚、二乙二醇单异丙醚、二乙二醇单丁醚、聚乙二醇、聚乙二醇单甲醚、聚乙二醇单丁醚、丙二醇单甲醚、二丙二醇单甲醚、三丙二醇单甲醚、丙二醇单甲醚乙酸酯和四氢糠醇。这些常规二醇醚不能有效地防止污渍。
然而,在用于溶解光刻胶的剥离剂中,化学式1的二醇醚基于其亲水性充当除去TFT基板上的残渣(例如剥离剂、光刻胶以及其它有机材料)的清洁剂。而且,化学式1的二醇醚对TFT基板的防污渍效果能够根据辛醇/水分配系数而被分级。
由上面的化学式1所表示的二醇醚可以具有由下面的等式1计算出的负值的辛醇/水分配系数(LogP):
Kow=Co/Cw
Co:溶质在辛醇中的浓度
Cw:溶质在水中的浓度
LogP(分配系数)=Log(Kow)。
基于该组合物的总重量,由上面的化学式1所表示的二醇醚的量为5~50wt%,且优选10~30wt%。当二醇醚的量小于5wt%时,该组合物不能有效地防止污渍。而且,当二醇醚的量大于50wt%时,该组合物在基板的累计片数方面的剥离容量可能下降。
(b)碱性化合物
该碱性化合物渗透进入因湿式蚀刻或干式蚀刻、灰化、离子注入等而退化的或交联的光刻胶的聚合物基体中,从而用于破坏分子内的键或分子间的键。而且,通过在残留在基板上的光刻胶的结构脆弱的区域中形成未用空间而将光刻胶转变成无定形的聚合物凝胶簇,该碱性化合物用于容易地除去粘附在基板上的光刻胶。
该碱性化合物可以是选自由氢氧化钾(KOH)、氢氧化钠(NaOH)、四甲基氢氧化铵(TMAH)、四乙基氢氧化铵(TEAH)、碳酸盐、磷酸盐、氨和胺组成的组中的至少一种。
该胺的例子可以包括:伯胺,诸如甲胺、乙胺、单异丙胺、正丁胺、仲丁胺、异丁胺、叔丁胺、戊胺等;仲胺,诸如二甲胺、二乙胺、二丙胺、二异丙胺、二丁胺、二异丁胺、甲基乙胺、甲基丙胺、甲基异丙胺、甲基丁胺、甲基异丁胺等;叔胺,诸如二乙基羟胺、三甲胺、三乙胺、三丙胺、三丁胺、三戊胺、二甲基乙胺、甲基二乙胺、甲基二丙胺等;烷醇胺,诸如胆碱、单乙醇胺、二乙醇胺、三乙醇胺、单丙醇胺、2-氨基乙醇、2-(乙氨基)乙醇、2-(甲氨基)乙醇、N-甲基二乙醇胺、N,N-二甲基乙醇胺、N,N-二乙氨基乙醇、2-(2-氨基乙氨基)-1-乙醇、1-氨基-2-丙醇、2-氨基-1-丙醇、3-氨基-1-丙醇、4-氨基-1-丁醇、二丁醇胺等;烷氧基胺,诸如(丁氧基甲基)二乙胺、(甲氧基甲基)二乙胺、(甲氧基甲基)二甲胺、(丁氧基甲基)二甲胺、(异丁氧基甲基)二甲胺、(甲氧基甲基)二乙醇胺、(羟乙氧基甲基)二乙胺、甲基(甲氧基甲基)氨基乙烷、甲基(甲氧基甲基)氨基乙醇、甲基(丁氧基甲基)氨基乙醇、2-(2-氨基乙氧基)乙醇等;以及环胺,诸如1-(2-羟乙基)哌嗪、1-(2-氨基乙基)哌嗪、1-(2-羟乙基)甲基哌嗪、N-(3-氨基丙基)吗啉、2-甲基哌嗪、1-甲基哌嗪、1-氨基-4-甲基哌嗪、1-苄基哌嗪、1-苯基哌嗪、N-甲基吗啉、4-乙基吗啉、N-甲酰基吗啉、N-(2-羟乙基)吗啉、N-(3-羟丙基)吗啉等。
基于组合物的总重量,碱性化合物的量可以为5~30wt%。当碱性化合物的量小于5wt%时,该组合物的剥离性能可能恶化。而且,当碱性化合物的量大于30wt%时,该组合物可能损伤金属膜。
(c)非质子性极性溶剂
该非质子性极性溶剂显示出以下优势:确保除去蚀刻等过程中所退化的或交联的光刻胶聚合物,并提高该组合物在基板的片数方面的剥离容量。非质子性极性溶剂可以具有既不过高也不过低的沸点,并可以以混合物的形式使用。
非质子性极性溶剂的例子可以包括吡咯烷酮化合物,诸如N-甲基吡咯烷酮(NMP)、N-乙基吡咯烷酮等;咪唑啉酮化合物,诸如1,3-二甲基-2-咪唑啉酮、1,3-二丙基-2-咪唑啉酮等;内酯化合物,诸如γ-丁内酯等;亚砜化合物,诸如环丁砜等;磷酸酯化合物,诸如磷酸三乙酯、磷酸三丁酯等;碳酸酯化合物,诸如碳酸二甲酯、碳酸亚乙酯等;和酰胺化合物,诸如甲酰胺、N-甲基甲酰胺、N,N-二甲基甲酰胺、乙酰胺、N-甲基乙酰胺、N,N-二甲基乙酰胺、N-(2-羟乙基)乙酰胺、3-甲氧基-N,N-二甲基丙酰胺、3-(2-乙基己氧基)-N,N-二甲基丙酰胺、3-丁氧基-N,N-二甲基丙酰胺等。它们可以单独使用或以两种或更多种的混合物使用。
基于组合物的总重量,非质子性极性溶剂的量可以为20~70wt%。当非质子性极性溶剂的量小于20wt%时,该组合物不能溶解光刻胶,并因此该组合物在基板的片数方面的剥离容量可能恶化。而且,当非质子性极性溶剂的量大于70wt%时,该组合物没有经济效益。
(d)抗腐蚀剂
该抗腐蚀剂用于防止金属布线的腐蚀。为了提高该组合物的抗腐蚀性能,该抗腐蚀剂可以是由下面的化学式2所表示的苯并***衍生物:
其中,R2、R3和R4各自独立地是氢原子、卤原子、烷基、环烷基、烯丙基、芳基、氨基、烷氨基、硝基、氰基、巯基、烷巯基、羟基、羟烷基、羧基、羧烷基、酰基、烷氧基或具有杂环的单价基团。
该苯并***衍生物的具体例子可以包括:2,2'-{[(苯并***)甲基]亚氨基}双乙醇、2,2'-{[(甲基-1-氢-苯并***-1-基)甲基]亚氨基}双甲醇、2,2'-{[(乙基-1-氢-苯并***-1-基)甲基]亚氨基}双乙醇、2,2'-{[(甲基-1-氢-苯并***-1-基)甲基]亚氨基}双乙醇、2,2'-{[(甲基-1-氢-苯并***-1-基)甲基]亚氨基}双羧酸、2,2'-{[(甲基-1-氢-苯并***-1-基)甲基]亚氨基}双甲胺、2,2'-{[(胺-1-氢-苯并***-1-基)甲基]亚氨基}双乙醇等。
基于组合物的总重量,该抗腐蚀剂的量可以为0.01~5wt%。当该抗腐蚀剂的量小于0.01wt%时,该组合物不能防止金属的腐蚀。而且,当该抗腐蚀剂的量大于5wt%时,该组合物没有经济效益。
(e)去离子水
本发明的光刻胶剥离剂组合物还包含去离子水。与不含去离子水的常见剥离剂组合物相比,该去离子水通过活化碱性化合物而增加了该组合物的剥离速率,并提高了该组合物除去因干式蚀刻或湿式蚀刻而退化的或交联的光刻胶的能力。
当用去离子水进行冲洗过程时,可以完全并快速地除去残留在基板上的有机污染物和光刻胶剥离剂。而且,就降低成本而言,包含去离子水的组合物是有利的。
根据光刻胶的种类和金属图案的形成过程,可以包含或不包含去离子水。当组合物包含去离子水时,基于该组合物的总重量,去离子水的量可以是10~40wt%。当该去离子水的量大于40wt%时,该组合物不能溶解光刻胶,因此该组合物在基板的片数方面的剥离容量可能会恶化。
使用本发明的光刻胶剥离剂组合物来除去光刻胶的过程通常可通过浸渍来进行,但也可通过喷射来进行。在用本发明的组合物处理基板后,可以用水而不使用有机溶剂(醇)作为清洗剂来清洗该基板。
本发明的光刻胶剥离剂组合物可以被有效地使用在除去半导体的光刻胶的过程中、除去电子器件的光刻胶的过程中以及尤其是除去平板显示器的光刻胶的过程中。
本发明提供了一种制造平板显示器基板的方法,包括使用上述光刻胶剥离剂组合物来清洁平板显示器基板的步骤。
在下文中,将参照下面的实施例更详细地描述本发明。然而,提出这些实施例以阐述本发明,而本发明的范围并不限于此。在本发明的范围内,这些实施例可以被本领域技术人员适当地修改和变化。
参照例1:二醇醚的选择
本发明的光刻胶剥离剂组合物具有在制造平板显示器基板的过程中防止污渍的优异能力。这种能力可以通过辛醇/水分配系数(LogP)而被预测,并能够被实验验证。在这种情况下,辛醇/水分配系数由下面的等式1来计算:
Kow=Co/Cw
Co:溶质在辛醇中的浓度
Cw:溶质在水中的浓度
LogP(分配系数)=Log(Kow)。
二醇醚由下面的化学式1来表示:
R-(OCH2CH2)n-OH (1)。
[表1]
二醇醚 | 辛醇/水分配系数(Log(Kow)) |
二乙二醇单甲醚 | -1.10 |
二乙二醇单*** | -0.54 |
三乙二醇单甲醚 | -0.70 |
二乙二醇单丁醚 | +0.15 |
二乙二醇单己醚 | +1.70 |
如上面的表1中所给出的,可以确定的是:表现出防污渍效果的二醇醚具有负值的辛醇/水分配系数(LogP)。
实施例
实施例1~7和比较例1~5:光刻胶剥离剂组合物的制备
使用下表2中所给出的组成比来制备实施例1~7和比较例1~5的光刻胶剥离剂组合物。
[表2]
注)MDG:二乙二醇单甲醚
EDG:二乙二醇单***
MTG:三乙二醇单甲醚
ETG:三乙二醇单***
BDG:二乙二醇单丁醚
BG:乙二醇丁醚
iPDG:二乙二醇单异丙醚
MEA:单乙醇胺
NMF:N-甲基甲酰胺
d-1:2,2-{[(乙基-1-氢-苯并***-1-基)甲基]亚氨基}双乙醇
测试例1:污渍的形成的评估
为了评估光刻胶剥离剂组合物的防污渍效果,提供了Cu基板,在该Cu基板上已经通过溅射形成了铜(Cu)层。而且,提供用于测试的光刻胶,该光刻胶通过在115℃的高温下烘烤我们的光刻胶(DWG-520)3天从而除去溶剂以固化而被获得。
以0.3%、0.5%和1%的量将上述用于测试的光刻胶添加到光刻胶剥离剂组合物中,并充分溶解到光刻胶剥离剂组合物中来制备剥离剂;然后将剥离剂的温度保持在50℃。随后,将基板浸渍在剥离剂中2分钟,然后从其中取出。然后,使用预定压力的氮气将残留在基板上的剥离剂和光刻胶在一定程度上除去,再然后将基板放置在平面地板上。随后,使用滴管将去离子水(DIW)以5滴的量滴在该基板的不同位点上,然后保持1分钟。其后,用DIW冲洗该基板1分钟,再然后使用氮气将残留在基板上的DIW完全除去。在这个测试方法中,为了再现真正的TFT过程,使用卤素灯、数码相机和电子显微镜评估了基板上形成污渍的程度。其结果示于表3、图1和图2中。在本文中,“非常好”是由◎表示,“良好”是由O表示,“一般”是由△表示,而“不好”是由X表示。
[表3]
如上面的表3所示的,可以确定的是,与比较例1~5的光刻胶剥离剂组合物相比,实施例1~7的光刻胶剥离剂组合物具有防止污渍形成的优异能力,并且在基板的片数方面即使剥离容量增加仍表现出更优异的防污渍效果。
如上所述,因为本发明的光刻胶剥离剂组合物包含由上面化学式1所表示的二醇醚,所以它表现出优异的防污渍能力、具有优异的清洁能力并就基板的片数而言允许剥离容量增加。
而且,当本发明的光刻胶剥离剂组合物用于制造平板显示器时,平板显示器的缺陷率下降,从而降低总制造成本。
虽然本发明的优选实施方式为了说明目的已被公开,但是本领域技术人员将理解,可进行各种修改、增添和替换而不背离如在所附的权利要求中所公开的本发明的范围和精神。
Claims (7)
1.一种防止污渍的光刻胶剥离剂组合物,由下述组分组成:
(a)由下面的化学式1所表示的二醇醚;
(b)碱性化合物;
(c)非质子性极性溶剂;以及
(d)抗腐蚀剂:
R-(OCH2CH2)n-OH(1)
其中,R是甲基或乙基,且n是2或3的整数,
其中,基于所述光刻胶剥离剂组合物的总重量,所述光刻胶剥离剂组合物包含(a)10wt%~30wt%的由上面的化学式1所表示的二醇醚,
其中,所述二醇醚具有由下面的等式1计算出的负值的辛醇/水分配系数LogP:
Kow=Co/Cw
Co:溶质在辛醇中的浓度
Cw:溶质在水中的浓度
LogP=Log(Kow)。
2.根据权利要求1所述的光刻胶剥离剂组合物,其中,基于所述组合物的总重量,所述组合物包含:
(b)5~30wt%的碱性化合物;
(c)20~70wt%的非质子性极性溶剂;以及
(d)0.01~5wt%的抗腐蚀剂。
3.根据权利要求1所述的光刻胶剥离剂组合物,其中,所述二醇醚是选自由二乙二醇单甲醚、二乙二醇***、三乙二醇单甲醚和三乙二醇单***组成的组中的至少一种。
4.根据权利要求1所述的光刻胶剥离剂组合物,其中,所述碱性化合物是选自由氢氧化钾、氢氧化钠、四甲基氢氧化铵、四乙基氢氧化铵、碳酸盐、磷酸盐、氨和胺组成的组中的至少一种。
5.根据权利要求1所述的光刻胶剥离剂组合物,其中,所述非质子性极性溶剂是选自由吡咯烷酮化合物、咪唑啉酮化合物、内酯化合物、亚砜化合物、磷酸酯化合物、碳酸酯化合物和酰胺化合物组成的组中的至少一种。
6.根据权利要求1所述的光刻胶剥离剂组合物,其中,所述抗腐蚀剂是由下面的化学式2所表示的苯并***衍生物:
其中,R2、R3和R4各自独立地是氢原子、卤原子、烷基、环烷基、烯丙基、芳基、氨基、烷氨基、硝基、氰基、巯基、烷巯基、羟基、羟烷基、羧基、羧烷基、酰基、烷氧基或具有杂环的单价基团。
7.一种制造平板显示器基板的方法,包括使用根据权利要求1~6中任何一项所述的光刻胶剥离剂组合物来清洁平板显示器基板的步骤。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910788185.XA CN110597024B (zh) | 2012-11-13 | 2013-10-31 | 防止污渍的光刻胶剥离剂组合物及平板显示器基板的制法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2012-0127846 | 2012-11-13 | ||
KR1020120127846A KR102032321B1 (ko) | 2012-11-13 | 2012-11-13 | 얼룩 발생 방지용 레지스트 박리액 조성물 |
CN201310530582.XA CN103809396A (zh) | 2012-11-13 | 2013-10-31 | 防止污渍的光刻胶剥离剂组合物及平板显示器基板的制法 |
CN201910788185.XA CN110597024B (zh) | 2012-11-13 | 2013-10-31 | 防止污渍的光刻胶剥离剂组合物及平板显示器基板的制法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310530582.XA Division CN103809396A (zh) | 2012-11-13 | 2013-10-31 | 防止污渍的光刻胶剥离剂组合物及平板显示器基板的制法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110597024A CN110597024A (zh) | 2019-12-20 |
CN110597024B true CN110597024B (zh) | 2024-03-08 |
Family
ID=50706372
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310530582.XA Pending CN103809396A (zh) | 2012-11-13 | 2013-10-31 | 防止污渍的光刻胶剥离剂组合物及平板显示器基板的制法 |
CN201910788185.XA Active CN110597024B (zh) | 2012-11-13 | 2013-10-31 | 防止污渍的光刻胶剥离剂组合物及平板显示器基板的制法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310530582.XA Pending CN103809396A (zh) | 2012-11-13 | 2013-10-31 | 防止污渍的光刻胶剥离剂组合物及平板显示器基板的制法 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR102032321B1 (zh) |
CN (2) | CN103809396A (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102180284B1 (ko) * | 2015-01-13 | 2020-11-18 | 동우 화인켐 주식회사 | 실리콘계 수지 제거용 조성물 및 이를 이용한 박막 기판 제조 방법 |
KR102265415B1 (ko) * | 2015-02-17 | 2021-06-15 | 동우 화인켐 주식회사 | 경화 고분자 박리액 조성물 |
CN106527066B (zh) * | 2015-08-31 | 2021-04-30 | 安集微电子科技(上海)股份有限公司 | 一种光阻残留物清洗液 |
KR102414295B1 (ko) * | 2016-01-22 | 2022-06-30 | 주식회사 이엔에프테크놀로지 | 포토레지스트 제거용 박리액 조성물 |
KR102540253B1 (ko) * | 2016-06-07 | 2023-06-07 | 주식회사 이엔에프테크놀로지 | 칼라 필터용 박리액 조성물 |
WO2019006725A1 (en) * | 2017-07-06 | 2019-01-10 | Dow Global Technologies Llc | COMBINATIONS OF AMIDES FOR CLEANING AND STRIPPING ELECTRONIC PARTS |
CN108212914A (zh) * | 2018-01-08 | 2018-06-29 | 蓝思科技(长沙)有限公司 | 一种3d玻璃菲林拆解后残胶的清洗工艺 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040098751A (ko) * | 2003-05-15 | 2004-11-26 | 주식회사 엘지화학 | 포토레지스트용 스트리퍼 조성물 |
KR20060117666A (ko) * | 2005-05-13 | 2006-11-17 | 주식회사 엘지화학 | 포토레지스트용 스트리퍼 조성물 |
CN101042543A (zh) * | 2006-03-23 | 2007-09-26 | 株式会社东进世美肯 | 用于清洗抗蚀剂脱膜剂的化学清洗组合物 |
KR20080044031A (ko) * | 2006-11-15 | 2008-05-20 | 동우 화인켐 주식회사 | 포토레지스트 박리액 조성물 및 이를 이용하는포토레지스트의 박리방법 |
KR20090037088A (ko) * | 2007-10-11 | 2009-04-15 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 및 이를 이용한 레지스트의박리방법 |
KR20100033649A (ko) * | 2008-09-22 | 2010-03-31 | 에스케이에너지 주식회사 | 포토레지스트용 스트리퍼 조성물 |
WO2011037300A1 (ko) * | 2009-09-25 | 2011-03-31 | 주식회사 엘지화학 | 포토레지스트 스트리퍼 조성물 및 이를 이용한 포토레지스트 박리방법 |
CN102169296A (zh) * | 2010-02-08 | 2011-08-31 | 东京应化工业株式会社 | 光刻用洗涤液以及配线形成方法 |
KR20120089873A (ko) * | 2010-12-21 | 2012-08-14 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 |
CN102667628A (zh) * | 2009-11-16 | 2012-09-12 | 东友Fine-Chem股份有限公司 | 非水系光阻剥离剂组成物 |
CN103119105A (zh) * | 2010-09-27 | 2013-05-22 | 伊士曼化工公司 | 用于从基片去除物质的包含至少一种单酰胺和/或至少一种二酰胺的聚合物或单体组合物及其使用方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW546553B (en) * | 1998-12-25 | 2003-08-11 | Tokyo Ohka Kogyo Co Ltd | Photoresist stripping liquid composition and a method of stripping photoresists using the same |
TWI315030B (en) * | 2003-06-26 | 2009-09-21 | Dongwoo Fine Chem Co Ltd | Photoresist stripper composition, and exfoliation method of a photoresist using it |
KR101136026B1 (ko) | 2004-09-24 | 2012-04-18 | 주식회사 동진쎄미켐 | 포토레지스트용 박리제 및 상기 박리제를 이용한 박막트랜지스터 표시판의 제조 방법 |
KR20080031565A (ko) * | 2006-10-04 | 2008-04-10 | 동우 화인켐 주식회사 | 포토레지스트 박리용 조성물 및 이를 이용한 박리 방법 |
KR101114502B1 (ko) * | 2010-06-28 | 2012-02-24 | 램테크놀러지 주식회사 | 세정용 조성물 및 이를 이용한 반도체 패턴의 형성방법 |
KR101089211B1 (ko) * | 2010-12-02 | 2011-12-02 | 엘티씨 (주) | 1차 알칸올 아민을 포함하는 lcd 제조용 포토레지스트 박리액 조성물 |
-
2012
- 2012-11-13 KR KR1020120127846A patent/KR102032321B1/ko active IP Right Review Request
-
2013
- 2013-10-31 CN CN201310530582.XA patent/CN103809396A/zh active Pending
- 2013-10-31 CN CN201910788185.XA patent/CN110597024B/zh active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040098751A (ko) * | 2003-05-15 | 2004-11-26 | 주식회사 엘지화학 | 포토레지스트용 스트리퍼 조성물 |
KR20060117666A (ko) * | 2005-05-13 | 2006-11-17 | 주식회사 엘지화학 | 포토레지스트용 스트리퍼 조성물 |
CN101042543A (zh) * | 2006-03-23 | 2007-09-26 | 株式会社东进世美肯 | 用于清洗抗蚀剂脱膜剂的化学清洗组合物 |
KR20080044031A (ko) * | 2006-11-15 | 2008-05-20 | 동우 화인켐 주식회사 | 포토레지스트 박리액 조성물 및 이를 이용하는포토레지스트의 박리방법 |
KR20090037088A (ko) * | 2007-10-11 | 2009-04-15 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 및 이를 이용한 레지스트의박리방법 |
KR20100033649A (ko) * | 2008-09-22 | 2010-03-31 | 에스케이에너지 주식회사 | 포토레지스트용 스트리퍼 조성물 |
WO2011037300A1 (ko) * | 2009-09-25 | 2011-03-31 | 주식회사 엘지화학 | 포토레지스트 스트리퍼 조성물 및 이를 이용한 포토레지스트 박리방법 |
CN102667628A (zh) * | 2009-11-16 | 2012-09-12 | 东友Fine-Chem股份有限公司 | 非水系光阻剥离剂组成物 |
CN102169296A (zh) * | 2010-02-08 | 2011-08-31 | 东京应化工业株式会社 | 光刻用洗涤液以及配线形成方法 |
CN103119105A (zh) * | 2010-09-27 | 2013-05-22 | 伊士曼化工公司 | 用于从基片去除物质的包含至少一种单酰胺和/或至少一种二酰胺的聚合物或单体组合物及其使用方法 |
KR20120089873A (ko) * | 2010-12-21 | 2012-08-14 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 |
Also Published As
Publication number | Publication date |
---|---|
CN103809396A (zh) | 2014-05-21 |
KR102032321B1 (ko) | 2019-10-15 |
CN110597024A (zh) | 2019-12-20 |
KR20140060910A (ko) | 2014-05-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110597024B (zh) | 防止污渍的光刻胶剥离剂组合物及平板显示器基板的制法 | |
JP4208924B2 (ja) | 非水性、非腐食性マイクロエレクトロニクス洗浄組成物 | |
KR101734593B1 (ko) | 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 | |
KR20110053557A (ko) | 레지스트 박리액 조성물 | |
CN103424999A (zh) | 抗蚀剂剥离液组合物及使用其制造tft阵列基板的方法 | |
CN103064263A (zh) | 抗蚀剂剥离液组合物及利用该组合物的抗蚀剂剥离方法 | |
KR102392062B1 (ko) | 레지스트 박리액 조성물 | |
KR102091544B1 (ko) | 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 | |
CN107239006B (zh) | 抗蚀剂剥离液组合物、平板及其制造方法和显示装置 | |
KR20130128952A (ko) | 플랫 패널 디스플레이용 레지스트 박리액 조성물 | |
KR20130139482A (ko) | 레지스트 박리액 조성물 | |
KR101858750B1 (ko) | 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 | |
KR20140044482A (ko) | 전자소자용 세정액 조성물 | |
CN111781808A (zh) | 抗蚀剂剥离液组合物、平板显示器基板及其制造方法 | |
KR102135187B1 (ko) | 포토레지스트 박리액 조성물 | |
KR102572751B1 (ko) | 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 | |
KR20150026582A (ko) | 레지스트 박리액 조성물 | |
KR102324927B1 (ko) | 얼룩 발생 방지용 레지스트 박리액 조성물 | |
KR20140119286A (ko) | 포토레지스트 박리액 조성물 및 이를 이용한 포토레지스트의 박리방법 | |
KR102092919B1 (ko) | 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 | |
KR101857807B1 (ko) | 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 | |
KR101543827B1 (ko) | 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법 | |
KR101880302B1 (ko) | 레지스트 박리액 조성물 및 이를 이용한 레지스트 박리방법 | |
KR20180004609A (ko) | 레지스트 박리액 조성물, 이를 사용하여 제조되는 디스플레이 기판의 제조방법 및 이에 따른 디스플레이 기판 | |
KR20150000183A (ko) | 플랫 패널 디스플레이 제조용 레지스트 박리액 조성물 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |