KR102032321B1 - 얼룩 발생 방지용 레지스트 박리액 조성물 - Google Patents

얼룩 발생 방지용 레지스트 박리액 조성물 Download PDF

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Publication number
KR102032321B1
KR102032321B1 KR1020120127846A KR20120127846A KR102032321B1 KR 102032321 B1 KR102032321 B1 KR 102032321B1 KR 1020120127846 A KR1020120127846 A KR 1020120127846A KR 20120127846 A KR20120127846 A KR 20120127846A KR 102032321 B1 KR102032321 B1 KR 102032321B1
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South Korea
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group
formula
resist
composition
ether
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KR1020120127846A
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English (en)
Korean (ko)
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KR20140060910A (ko
Inventor
고경준
신혜라
이유진
Original Assignee
동우 화인켐 주식회사
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=50706372&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR102032321(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 동우 화인켐 주식회사 filed Critical 동우 화인켐 주식회사
Priority to KR1020120127846A priority Critical patent/KR102032321B1/ko
Priority to CN201310530582.XA priority patent/CN103809396A/zh
Priority to CN201910788185.XA priority patent/CN110597024B/zh
Publication of KR20140060910A publication Critical patent/KR20140060910A/ko
Application granted granted Critical
Publication of KR102032321B1 publication Critical patent/KR102032321B1/ko

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00Inks
    • C09D11/30Inkjet printing inks
    • C09D11/38Inkjet printing inks characterised by non-macromolecular additives other than solvents, pigments or dyes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • C09K13/02Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/34Imagewise removal by selective transfer, e.g. peeling away
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020120127846A 2012-11-13 2012-11-13 얼룩 발생 방지용 레지스트 박리액 조성물 KR102032321B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020120127846A KR102032321B1 (ko) 2012-11-13 2012-11-13 얼룩 발생 방지용 레지스트 박리액 조성물
CN201310530582.XA CN103809396A (zh) 2012-11-13 2013-10-31 防止污渍的光刻胶剥离剂组合物及平板显示器基板的制法
CN201910788185.XA CN110597024B (zh) 2012-11-13 2013-10-31 防止污渍的光刻胶剥离剂组合物及平板显示器基板的制法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120127846A KR102032321B1 (ko) 2012-11-13 2012-11-13 얼룩 발생 방지용 레지스트 박리액 조성물

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020190121648A Division KR20190116211A (ko) 2019-10-01 2019-10-01 얼룩 발생 방지용 레지스트 박리액 조성물

Publications (2)

Publication Number Publication Date
KR20140060910A KR20140060910A (ko) 2014-05-21
KR102032321B1 true KR102032321B1 (ko) 2019-10-15

Family

ID=50706372

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120127846A KR102032321B1 (ko) 2012-11-13 2012-11-13 얼룩 발생 방지용 레지스트 박리액 조성물

Country Status (2)

Country Link
KR (1) KR102032321B1 (zh)
CN (2) CN110597024B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102180284B1 (ko) * 2015-01-13 2020-11-18 동우 화인켐 주식회사 실리콘계 수지 제거용 조성물 및 이를 이용한 박막 기판 제조 방법
KR102265415B1 (ko) * 2015-02-17 2021-06-15 동우 화인켐 주식회사 경화 고분자 박리액 조성물
CN106527066B (zh) * 2015-08-31 2021-04-30 安集微电子科技(上海)股份有限公司 一种光阻残留物清洗液
KR102414295B1 (ko) * 2016-01-22 2022-06-30 주식회사 이엔에프테크놀로지 포토레지스트 제거용 박리액 조성물
KR102540253B1 (ko) * 2016-06-07 2023-06-07 주식회사 이엔에프테크놀로지 칼라 필터용 박리액 조성물
US11016392B2 (en) 2017-07-06 2021-05-25 Dow Global Technologies Llc Amide combinations for cleaning and stripping of electronic parts
CN108212914A (zh) * 2018-01-08 2018-06-29 蓝思科技(长沙)有限公司 一种3d玻璃菲林拆解后残胶的清洗工艺

Citations (3)

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KR100647516B1 (ko) * 2003-06-26 2006-11-23 동우 화인켐 주식회사 포토레지스트 박리액 조성물 및 이를 이용한 포토레지스트의 박리방법
JP2011164293A (ja) * 2010-02-08 2011-08-25 Tokyo Ohka Kogyo Co Ltd リソグラフィー用洗浄液及び配線形成方法
KR101089211B1 (ko) * 2010-12-02 2011-12-02 엘티씨 (주) 1차 알칸올 아민을 포함하는 lcd 제조용 포토레지스트 박리액 조성물

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KR100544889B1 (ko) * 2003-05-15 2006-01-24 주식회사 엘지화학 포토레지스트용 스트리퍼 조성물
KR101136026B1 (ko) 2004-09-24 2012-04-18 주식회사 동진쎄미켐 포토레지스트용 박리제 및 상기 박리제를 이용한 박막트랜지스터 표시판의 제조 방법
KR100846057B1 (ko) * 2005-05-13 2008-07-11 주식회사 엘지화학 포토레지스트용 스트리퍼 조성물
KR101251594B1 (ko) * 2006-03-23 2013-04-08 주식회사 동진쎄미켐 레지스트 스트리퍼 제거용 케미칼 린스 조성물
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KR100647516B1 (ko) * 2003-06-26 2006-11-23 동우 화인켐 주식회사 포토레지스트 박리액 조성물 및 이를 이용한 포토레지스트의 박리방법
JP2011164293A (ja) * 2010-02-08 2011-08-25 Tokyo Ohka Kogyo Co Ltd リソグラフィー用洗浄液及び配線形成方法
KR101089211B1 (ko) * 2010-12-02 2011-12-02 엘티씨 (주) 1차 알칸올 아민을 포함하는 lcd 제조용 포토레지스트 박리액 조성물

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Publication number Publication date
CN110597024B (zh) 2024-03-08
KR20140060910A (ko) 2014-05-21
CN103809396A (zh) 2014-05-21
CN110597024A (zh) 2019-12-20

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