CN110246770A - 半导体制造装置及半导体装置的制造方法 - Google Patents
半导体制造装置及半导体装置的制造方法 Download PDFInfo
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- CN110246770A CN110246770A CN201910424177.7A CN201910424177A CN110246770A CN 110246770 A CN110246770 A CN 110246770A CN 201910424177 A CN201910424177 A CN 201910424177A CN 110246770 A CN110246770 A CN 110246770A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 102
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 44
- 229910000679 solder Inorganic materials 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 44
- 239000002184 metal Substances 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 238000010438 heat treatment Methods 0.000 claims description 18
- 238000001816 cooling Methods 0.000 claims description 14
- 238000007711 solidification Methods 0.000 claims description 5
- 230000008023 solidification Effects 0.000 claims description 5
- 239000000155 melt Substances 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 230000004886 head movement Effects 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 description 18
- 230000007423 decrease Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000006837 decompression Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- 230000017525 heat dissipation Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/755—Cooling means
- H01L2224/75502—Cooling means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75743—Suction holding means
- H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75753—Means for optical alignment, e.g. sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/759—Means for monitoring the connection process
- H01L2224/7592—Load or pressure adjusting means, e.g. sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3512—Cracking
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910424177.7A CN110246770B (zh) | 2015-05-12 | 2016-01-08 | 半导体制造装置及半导体装置的制造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015097594A JP6581389B2 (ja) | 2015-05-12 | 2015-05-12 | 半導体装置の製造装置及び製造方法 |
JP2015-097594 | 2015-05-12 | ||
CN201610011824.8A CN106158700B (zh) | 2015-05-12 | 2016-01-08 | 半导体装置的制造装置及半导体装置的制造方法 |
CN201910424177.7A CN110246770B (zh) | 2015-05-12 | 2016-01-08 | 半导体制造装置及半导体装置的制造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610011824.8A Division CN106158700B (zh) | 2015-05-12 | 2016-01-08 | 半导体装置的制造装置及半导体装置的制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN110246770A true CN110246770A (zh) | 2019-09-17 |
CN110246770B CN110246770B (zh) | 2023-10-20 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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CN201610011824.8A Active CN106158700B (zh) | 2015-05-12 | 2016-01-08 | 半导体装置的制造装置及半导体装置的制造方法 |
CN201910424177.7A Active CN110246770B (zh) | 2015-05-12 | 2016-01-08 | 半导体制造装置及半导体装置的制造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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CN201610011824.8A Active CN106158700B (zh) | 2015-05-12 | 2016-01-08 | 半导体装置的制造装置及半导体装置的制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10347603B2 (zh) |
JP (1) | JP6581389B2 (zh) |
CN (2) | CN106158700B (zh) |
TW (1) | TWI603405B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102214040B1 (ko) * | 2017-03-06 | 2021-02-09 | (주)테크윙 | 반도체소자 테스트용 핸들러의 가압장치 및 그 작동 방법 |
TWI682152B (zh) * | 2017-08-22 | 2020-01-11 | 日商新川股份有限公司 | 安裝裝置及溫度測定方法 |
JP6517412B1 (ja) * | 2018-07-12 | 2019-05-22 | 白光株式会社 | はんだこて制御装置 |
US20220359240A1 (en) * | 2020-08-07 | 2022-11-10 | Shinkawa Ltd. | Manufacturing apparatus and manufacturing method of semiconductor device |
TWI793766B (zh) * | 2021-09-15 | 2023-02-21 | 日商新川股份有限公司 | 半導體裝置的製造裝置及製造方法 |
CN114871561B (zh) * | 2022-05-12 | 2024-02-27 | 昂纳科技(深圳)集团股份有限公司 | 热压焊头及热压焊设备 |
Citations (11)
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JPH09153522A (ja) * | 1995-11-30 | 1997-06-10 | Toshiba Corp | ボンディング装置およびボンディング方法 |
JP2002057190A (ja) * | 2000-08-09 | 2002-02-22 | Mitsubishi Electric Corp | 半導体装置の製造方法および半導体装置の製造装置 |
CN1513202A (zh) * | 2001-06-08 | 2004-07-14 | 芝浦机械电子装置股份有限公司 | 电子部件压接装置及其方法 |
CN1965401A (zh) * | 2004-06-08 | 2007-05-16 | 松下电器产业株式会社 | 元器件安装方法及元器件安装装置 |
CN101436560A (zh) * | 2007-11-16 | 2009-05-20 | 株式会社瑞萨科技 | 半导体装置的制造装置和半导体装置的制造方法 |
US20090289098A1 (en) * | 2005-12-06 | 2009-11-26 | Katsumi Terada | Chip Mounting Apparatus and Chip Mounting Method |
JP2010219334A (ja) * | 2009-03-17 | 2010-09-30 | Nec Corp | 電子部品製造装置、方法及びプログラム |
TW201230214A (en) * | 2011-01-05 | 2012-07-16 | Toshiba Kk | Method for manufacturing semiconductor device |
CN102959695A (zh) * | 2010-06-30 | 2013-03-06 | 株式会社新川 | 电子器件安装装置以及电子器件安装方法 |
CN103367181A (zh) * | 2012-04-02 | 2013-10-23 | 国际商业机器公司 | 用于接合基板的方法和设备 |
CN103887192A (zh) * | 2012-12-21 | 2014-06-25 | 贝思瑞士股份公司 | 用于在衬底上安装半导体芯片的热压结合方法及装置 |
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JP2000036501A (ja) * | 1998-05-12 | 2000-02-02 | Sharp Corp | ダイボンド装置 |
CN201449396U (zh) * | 2009-03-23 | 2010-05-05 | 常州新区爱立德电子有限公司 | 顶针升降台调节装置 |
JP4880055B2 (ja) * | 2010-06-04 | 2012-02-22 | 株式会社新川 | 電子部品実装装置及びその方法 |
JP2016062960A (ja) * | 2014-09-16 | 2016-04-25 | 株式会社東芝 | 半導体装置の製造装置および半導体装置の製造方法 |
-
2015
- 2015-05-12 JP JP2015097594A patent/JP6581389B2/ja active Active
-
2016
- 2016-01-04 TW TW105100072A patent/TWI603405B/zh active
- 2016-01-08 CN CN201610011824.8A patent/CN106158700B/zh active Active
- 2016-01-08 CN CN201910424177.7A patent/CN110246770B/zh active Active
- 2016-03-04 US US15/061,970 patent/US10347603B2/en active Active
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JPH09153522A (ja) * | 1995-11-30 | 1997-06-10 | Toshiba Corp | ボンディング装置およびボンディング方法 |
JP2002057190A (ja) * | 2000-08-09 | 2002-02-22 | Mitsubishi Electric Corp | 半導体装置の製造方法および半導体装置の製造装置 |
CN1513202A (zh) * | 2001-06-08 | 2004-07-14 | 芝浦机械电子装置股份有限公司 | 电子部件压接装置及其方法 |
CN1965401A (zh) * | 2004-06-08 | 2007-05-16 | 松下电器产业株式会社 | 元器件安装方法及元器件安装装置 |
US20090289098A1 (en) * | 2005-12-06 | 2009-11-26 | Katsumi Terada | Chip Mounting Apparatus and Chip Mounting Method |
CN101436560A (zh) * | 2007-11-16 | 2009-05-20 | 株式会社瑞萨科技 | 半导体装置的制造装置和半导体装置的制造方法 |
JP2010219334A (ja) * | 2009-03-17 | 2010-09-30 | Nec Corp | 電子部品製造装置、方法及びプログラム |
CN102959695A (zh) * | 2010-06-30 | 2013-03-06 | 株式会社新川 | 电子器件安装装置以及电子器件安装方法 |
TW201230214A (en) * | 2011-01-05 | 2012-07-16 | Toshiba Kk | Method for manufacturing semiconductor device |
CN103367181A (zh) * | 2012-04-02 | 2013-10-23 | 国际商业机器公司 | 用于接合基板的方法和设备 |
CN103887192A (zh) * | 2012-12-21 | 2014-06-25 | 贝思瑞士股份公司 | 用于在衬底上安装半导体芯片的热压结合方法及装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2016213384A (ja) | 2016-12-15 |
CN106158700A (zh) | 2016-11-23 |
CN106158700B (zh) | 2019-06-14 |
JP6581389B2 (ja) | 2019-09-25 |
CN110246770B (zh) | 2023-10-20 |
TW201640597A (zh) | 2016-11-16 |
US10347603B2 (en) | 2019-07-09 |
TWI603405B (zh) | 2017-10-21 |
US20160336291A1 (en) | 2016-11-17 |
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