CN110137690A - A kind of Terahertz frequency range broadband Meta Materials wave absorbing device - Google Patents
A kind of Terahertz frequency range broadband Meta Materials wave absorbing device Download PDFInfo
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- CN110137690A CN110137690A CN201910394187.0A CN201910394187A CN110137690A CN 110137690 A CN110137690 A CN 110137690A CN 201910394187 A CN201910394187 A CN 201910394187A CN 110137690 A CN110137690 A CN 110137690A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
Abstract
The invention discloses a kind of Terahertz frequency range broadband Meta Materials wave absorbing devices, belong to electromagnetic wave and Novel manual electromagnetic material technical field.The present invention includes metal substrate, dielectric layer and metal resonant layer from bottom to top, there are four pairs of parallel channels on metal resonant layer, by introducing capacitive couplings channel, forms capacitive coupling principle, multiple absorption peaks neighbouring on frequency spectrum are generated, to effectively promote bandwidth of operation.Terahertz broadband Meta Materials wave absorbing device of the present invention is above 90% within the scope of 0.54~1.365THz, to the absorptivity of incoming electromagnetic wave energy, relative bandwidth 86.6%.Meanwhile the characteristic that wave absorbing device of the present invention has polarisation angles insensitive and wide angle absorbs.The present invention can be used in Terahertz frequency range and other frequency range broadband Meta Materials wave absorbing devices and its system.
Description
Technical field
The invention belongs to electromagnetic waves and Novel manual electromagnetic material technical field, and in particular to it is a kind of polarize it is insensitive too
Hertz frequency range broadband Meta Materials wave absorbing device.
Background technique
With the high speed development of modern science and technology, electromagnetic wave is had been widely used for into satellite as the carrier of information and is led to
The various scenes such as letter, land mobile communication, radar detection, radio broadcasting.It is unfavorable to electromagenetic wave radiation bring or even harmful
Influence is also of increasing concern, and electromagnetic pollution is administered in such a way that unwanted electromagnetic wave is shielded, absorbed to be become
It is particularly important.
Meta Materials refer to it is a kind of combined by sub-wavelength micro structure unit according to certain rule after the artificial material that constitutes.Due to
Microstructure unit has sub-wavelength characteristic, and structure size is much smaller than operation wavelength, therefore is one for operation wavelength
The kind uniform material of performance.Meta Materials usually have typical three-decker (surface metal resonant layer, middle dielectric layer, back
Metal layer), there is very high expansibility on this basis.The characteristics of Meta Materials, is through purposefully setting unit device
Resonance structure and its structural parameters and distribution, can be obtained at specific frequency not available for controllable or even natural material
Electromagnetic property, for example, negative dielectric constant, negative magnetic permeability etc..
Absorbing material, which refers to, can absorb or significantly weaken a kind of material for being incident on the electromagnetic wave energy on its surface.It inhales
Wave technology mainly using the various different loss mechanisms of absorbing material by the energy of incident electromagnetic wave be converted into thermal energy either other
Energy is to achieve the purpose that electromagnetic wave absorption.Meta Materials are widely used as absorbing material with its unusual electromagnetic property.Due to
Meta Materials wave absorbing device relies primarily on the strong resonance characteristic of surface resonance unit, generally narrowband structure.It therefore is expansion Meta Materials
The application range of wave absorbing device, broadband Meta Materials wave absorbing device are of great significance.
Document " Switchable Broadband Terahertz Absorber/Reflector Enabled by
The Meta Materials wave absorbing device of the disclosed load graphene layer of Hybrid Graphene-gold Metasurfce " passes through applied voltage
The material property for controlling graphene layer, changes the absorbing state of wave absorbing device.Optimally, the wave absorbing device 0.53~
1.05THz range internal absorption factor is higher than 90%, relative bandwidth 65.8%.
Document " Broadband Tunable Absorber for Terahertz Waves Based on
Isotropic Silicon Metasurfaces " is disclosed to be adjusted based on the Meta Materials wave absorbing device of doped silicon by applied voltage
Control the conductivity of surface doping silicon.When the conductivity of doped silicon layer is 2500S/m, absorption band which is optimal
Width is higher than 90% in 0.497~1.045THz range absorptivity, relative bandwidth 71.1%.
Application No. is 201310443091.1 Chinese invention patent applications to disclose a kind of super material in terahertz wave band broadband
Expect absorber, including metallic reflector, dielectric layer and metal pattern layer, wherein metal pattern layer unit component is multiple concentric gold
Belong to ring.The resonance performance of different size concentric metal rings is overlapped mutually, and forms wide band absorption effect.In the embodiment that effect is optimal
In, by the different concentric metal ring of 8 sizes of superposition, absorptivity is 2.38~6.08THz in 50% frequency range, relatively
Bandwidth is 87.47%.But its overall absorption rate is lower, and fluctuates in target frequency bands larger.
Application No. is 201410560036.5 Chinese invention patent applications to disclose a kind of broadband based on L-type structure too
Hertz meta-material absorber, including metallic reflector, dielectric layer and metal pattern layer.In 2.8~4.2THz frequency range, the absorption
The absorptivity of device is 90% or more, relative bandwidth 40%.
Application No. is 201610258722.6 Chinese invention patent applications to disclose a kind of width absorbed based on multi-resonant
Frequency band Terahertz meta-material absorber.The absorber includes the graphical function material layer in upper layer, middle dielectric layer and lower metal
Reflecting layer.Frequency range of the Meta Materials wave absorbing device absorptivity greater than 90% is 1.71~3.81THz, and relative bandwidth is
76.08%.
The design scheme of above-mentioned broadband Meta Materials wave absorbing device concentrates on two aspects, first is that by addition graphene layer or adopting
Surface metal-layer is replaced with the semiconductor layer of doping, while being optimal effect, needs additional regulation voltage.This is certain
The complexity in development, realization and application is increased in degree；Second is that designing multiple resonant structures in the case where not increasing the number of plies
It realizes broadband effects, is such as superimposed using various sizes of conformal structure, form multi-resonant and the neighbouring superimposed reality of absorption frequency range
Existing broadband effects, but influencing each other between different dimensional structures can reduce assimilation effect and absorptivity fluctuation is larger, while only
The bandwidth that can be expanded by single multiple resonant structures is limited.
Summary of the invention
The purpose of the present invention is overcoming the defect of the above-mentioned prior art, a kind of Terahertz frequency range broadband Meta Materials are provided and inhale wave
Device remains above 90% absorptivity in broad frequency range, while not increasing design complexities, can effectively expand work
Bandwidth.
Technical problem proposed by the invention solves in this way:
A kind of Terahertz frequency range broadband Meta Materials wave absorbing device, including metal substrate 1, dielectric layer 2 and metal resonant layer 3；Gold
Belong to the lower surface that substrate 1 is located at dielectric layer 2, metal resonant layer 3 is located at the upper surface of dielectric layer 2；
Metal resonant layer 3 includes I-shaped interference type arrangement 301 and four square patch 302,303,304,305；I-shaped is handed over
Forked type structure 301 includes two I-shaped structures, and two I-shaped structures are generally aligned in the same plane and in center square crossing
It places, the edge of I-shaped structure arrives at the edge of dielectric layer 2；Four square patch 302,303,304,305 are intersected with I-shaped
Be centrosymmetric arrangement along clockwise direction centered on the center of type structure 301；Four square patch 302,303,304,
There are gaps to form four pairs of parallel channels between 305 and I-shaped intersection construction 301.
Metal substrate 1 is not limited to fixed type metal, it is therefore intended that is totally reflected incident electromagnetic wave.
The material of dielectric layer 2 is rigid foam, and dielectric constant is 1.05 (approximate with air).
Dielectric layer 2 is not limited to single layer structure, can increase supporting layer in the upper surface, lower surface or middle position of dielectric layer
It is realized with facilitating.
The material of metal resonant layer 3 be tantalum nitride, conductivity 7400S/m, it is therefore intended that in conjunction with above-mentioned metal substrate 1,
Dielectric layer 2 forms wideband resonance.
Appearance of the wideband resonance of wave absorbing device of the present invention from I-shaped interference type arrangement and square patch resonance effect
Property coupling superposition, capacitive coupling is from I-shaped interference type arrangement 301 and square patch 302,303,304,305 in center
The channel of formation.The method that the capacitive coupling principle expands bandwidth, i.e., by introducing capacitor between different surfaces resonance structure
Property coupling channel, it is corresponding when both having kept different surfaces resonance structure independent role under the action of capacitive couplings channel
Wave frequency section is inhaled, and new suction wave frequency section can be generated when different surfaces resonance structure intercouples.
Wave absorbing device used in Practical Project is using above-mentioned Terahertz frequency range broadband Meta Materials wave absorbing device as unit, is in M*N
Two-dimentional close period arrangement, wherein M and N is the biggish positive integer of numerical value.
It can be by wave absorbing device by the iteration optimization to structural parameters by wave absorbing device of the present invention progress equal proportion scaling
It is extended in other different Terahertz frequency ranges.
Meta Materials wave absorbing device in broadband of the present invention works in Terahertz frequency range, and structure carries out modeling and mould in micro-meter scale
It is quasi-.Entry port and exit ports are set as the port Fluent incentive mode, while using principal and subordinate's boundary condition in full-wave electromagnetic
Modeling and simulation in emulator HFSS (High Frequency Structure Simulator).The specific electromagnetism of every part is joined
Number uses control variate method and touring algorithm, is iterated optimization to target component, finally obtains optimized parameter.
The beneficial effects of the present invention are:
(1) Terahertz broadband Meta Materials wave absorbing device of the present invention is within the scope of 0.54~1.365THz, to electromagnetic wave
Absorptivity is above 90%；
(2) Terahertz broadband Meta Materials wave absorbing device of the present invention has the characteristic insensitive to incoming electromagnetic wave polarization,
High-absorbility is kept to the TE mode and TM mode electromagnetic wave, the wave absorbing device of different polarisation angles incidences；
(3) Terahertz broadband Meta Materials wave absorbing device of the present invention has wide angle of incidence absorption characteristic；To incident angle
Electromagnetic wave less than 45 °, absorption efficiency of the wave absorbing device within the scope of above-mentioned 0.54~1.365THz are above 70%；Even
When incidence angle is 70 °, the wave absorbing device still can work near resonance absorbing peak；
(4) Meta Materials wave absorbing device structure in Terahertz broadband of the present invention is simple, compact.
Detailed description of the invention
Fig. 1 is the overall structure diagram of Terahertz broadband Meta Materials wave absorbing device of the present invention；
Fig. 2 is the metal resonance schematic diagram of a layer structure of Terahertz broadband Meta Materials wave absorbing device of the present invention；
Fig. 3 is absorption of the Terahertz broadband Meta Materials wave absorbing device in TE, TM mode electromagnetic wave normal incidence described in embodiment
Rate graph of simulation results figure；
Fig. 4 is that Terahertz broadband Meta Materials wave absorbing device described in embodiment is just entered in TE mode electromagnetic wave with different polarization directions
Absorptivity graph of simulation results figure when penetrating；
Fig. 5 is that Terahertz broadband Meta Materials wave absorbing device described in embodiment is just entered in TM mode electromagnetic wave with different polarization directions
Absorptivity graph of simulation results figure when penetrating；
Fig. 6 is that Terahertz broadband Meta Materials wave absorbing device described in embodiment is entered in 0 ° of polarization TE mode electromagnetic wave with different angle
Absorptivity graph of simulation results figure when penetrating；
Fig. 7 is that Terahertz broadband Meta Materials wave absorbing device described in embodiment is entered in 0 ° of polarization TM mode electromagnetic wave with different angle
Absorptivity graph of simulation results figure when penetrating；
Fig. 8 is Terahertz broadband Meta Materials wave absorbing device described in embodiment in the electromagnetic wave normal incidence that frequency is 0.635THz
Surface current distribution；
Fig. 9 is Terahertz broadband Meta Materials wave absorbing device described in embodiment in the electromagnetic wave normal incidence that frequency is 1.084THz
Surface current distribution；
Figure 10 is the electromagnetic wave normal incidence that Terahertz broadband Meta Materials wave absorbing device is 1.333THz in frequency described in embodiment
When surface current distribution.
Specific embodiment
The present invention is further detailed with reference to the accompanying drawings and examples.
The present embodiment provides a kind of Terahertz frequency range broadband Meta Materials wave absorbing device, overall structure diagram as shown in Figure 1,
Including metal substrate 1, dielectric layer 2 and metal resonant layer 3；Metal substrate 1 is located at the lower surface of dielectric layer 2, and metal resonant layer 3
In the upper surface of dielectric layer 2；
The structural schematic diagram of metal resonant layer 3 is as shown in Fig. 2, include I-shaped interference type arrangement 301 and four square patch
302,303,304,305；I-shaped interference type arrangement 301 includes two I-shaped structures, and two I-shaped structures are located at same flat
It face and is placed in center square crossing, the edge of I-shaped structure arrives at the edge of dielectric layer 2；Four square patch 302,
303, it 304,305 is centrosymmetric along clockwise direction centered on the center of I-shaped interference type arrangement 301 arrangement；Four
There are gaps to form four pairs of parallel channels between square patch 302,303,304,305 and I-shaped intersection construction 301.
It is 7400S/m that the metal substrate 1, which selects tantalum nitride conductivity, and thickness t is 6~12 μm, and the present embodiment takes t=
μm 8, it is therefore intended that be totally reflected incident electromagnetic wave.The metal resonant layer 3 of the surface layer periodic arrangement selects tantalum nitride material
Material, conductivity 7400S/m, it is therefore intended that in conjunction with above-mentioned metal substrate 1, dielectric layer 2, form wideband resonance.I-shaped chiasma type
Structural parameters are as shown in Fig. 2, specific size are as follows: and a=250 μm, b=160 μm, w1=120 μm, w2=9 μm；Square patch structure
Parameter is as shown in Fig. 2, specific size are as follows: c=120 μm, d=28 μm.
When Fig. 3 is TE mode and TM mode electromagnetic wave normal incidence, the Terahertz broadband wave absorbing device absorbance curves figure can
To find out that three absorption peaks are located at 0.635THz, 1.084THz, 1.333THz, absorptivity is higher than 90% frequency range
For 0.54~1.365THz, relative bandwidth 86.6%；
When Fig. 4, Fig. 5 are respectively the TE mode and TM mode electromagnetic wave normal incidence of different polarisation angles, the Terahertz is wide
Absorbance curves figure with Meta Materials wave absorbing device.As can be seen that under TE and TM mode, the broadband wave absorbing device is for difference
The incident electromagnetic wave of polarization angular direction is kept above 90% absorptivity in broadband range.Therefore, the broadband wave absorbing device
With the characteristic insensitive to incident electromagnetic wave polarisation angles；
Fig. 6, Fig. 7 be electromagnetic wave with different angle incidence when, the absorptivity of the Terahertz broadband Meta Materials wave absorbing device is bent
Line chart.As can be seen that the broadband wave absorbing device is in target band to the absorption of incident electromagnetic wave with the increase of incident angle
Rate is on a declining curve.When incident angle is less than 45 °, the broadband wave absorbing device still has the absorptivity more than 70%, and
When incidence angle is 70 °, the wave absorbing device still can work near resonance absorbing peak.
The bandwidth broadning mechanism of capacitive coupling principle of the present invention can pass through the surface electricity at absorption peak respective frequencies
Flow distribution is explained further:
When Fig. 8, Fig. 9, Figure 10 are respectively the electromagnetic wave normal incidence that frequency is 0.635THz, 1.084THz and 1.333THz,
Surface current distribution situation on the embodiment metal resonant layer.As shown in Figure 8, the electric current on patch remains and I-shaped
Current direction in interference type arrangement center arm on the contrary, and surface current be concentrated mainly on center arm position.It can be seen that first
A absorption peak mostlys come from I-shaped interference type arrangement.As shown in figure 9, the frequency with incident electromagnetic wave increases to
1.084THz, two groups of structures generate strong coupling in channel location, and the reverse current that channel both sides are formed is to a certain extent
Further cancel out each other with the electric current on upright arm, so that electric current focuses primarily upon three transverse arms of I-shaped interference type arrangement,
And the corresponding resonance frequency of these three transverse arms forms second absorption peak.As shown in Figure 10, when frequency rises to 1.333THz,
Channel conducting between two groups of resonance structures, electric current focuses primarily upon patch location, and the resonance frequency of patch corresponds to third
Absorption peak.
As the above analysis, the capacitive coupling mechanism that the gap channel between two groups of structures generates is in the wave absorbing device band
Width, which expands aspect, plays important function.At 0.635THz, which is not turned on, and the mutual shadow between two structures is isolated
It rings, to retain first absorption peak from I-shaped interference type arrangement.At 1.084THz, which is generated
Strong coupling, to introduce new absorption mechanism.At 1.333THz, capacitive channel conducting, surface current is focused primarily upon
On paster structure, to form the third absorption peak from paster structure.These three absorption peaks are neighbouring on frequency spectrum, to have
The bandwidth of operation of the wave absorbing device is expanded to effect.
In conclusion Terahertz broadband Meta Materials wave absorbing device of the present invention is while realizing wide band absorption, to TE
There are good absorption, and the characteristic insensitive with polarization direction with the electromagnetic wave of TM mode；When incidence angle is less than 45 °,
The wave absorbing device still maintains the absorptivity more than 70% in range of target frequencies.This programme is having by capacitive coupling principle
While effect expansion suction wavestrip is wide, there is important directive significance to the design of Terahertz broadband Meta Materials wave absorbing device.
Above to the elaboration of the basic principles, principal features and advantages of the present invention, those skilled in the art it should be appreciated that
The present invention is not limited by above-mentioned specific embodiment.Description in above-mentioned specific embodiment and specification is intended merely to furtherly
Bright the principle of the present invention, under the premise of not departing from thinking range of the present invention, various changes and improvements may be made to the invention, these
Changes and improvements all fall within the protetion scope of the claimed invention.The scope of protection of present invention is by claims and equivalent
Object defines.
Claims (7)
1. a kind of Terahertz frequency range broadband Meta Materials wave absorbing device, which is characterized in that including metal substrate (1), dielectric layer (2) and gold
Belong to resonant layer (3)；Metal substrate (1) is located at the lower surface of dielectric layer (2), and metal resonant layer (3) is located at the upper table of dielectric layer (2)
Face；
Metal resonant layer (3) includes I-shaped interference type arrangement (301) and four square patch (302,303,304,305)；I-shaped
Interference type arrangement (301) includes two I-shaped structures, and two I-shaped structures are generally aligned in the same plane and vertical in center
Intersect and place, the edge of I-shaped structure arrives at the edge of dielectric layer (2)；Four square patch (302,303,304,305) with
Be centrosymmetric arrangement along clockwise direction centered on the center of I-shaped interference type arrangement (301)；Four square patch
There are gaps to form four pairs of parallel channels between (302,303,304,305) and I-shaped intersection construction (301).
2. Terahertz frequency range broadband Meta Materials wave absorbing device according to claim 1, which is characterized in that metal substrate (1)
Material is tantalum nitride, and conductivity 7400S/m, thickness t are 6~12 μm.
3. Terahertz frequency range broadband Meta Materials wave absorbing device according to claim 1, which is characterized in that the material of dielectric layer (2)
Material is rigid foam, dielectric constant 1.05.
4. Terahertz frequency range broadband Meta Materials wave absorbing device according to claim 1, which is characterized in that dielectric layer (2) is more
Layer structure, increasing in the upper surface, lower surface or middle position of dielectric layer has supporting layer.
5. Terahertz frequency range broadband Meta Materials wave absorbing device according to claim 1, which is characterized in that metal resonant layer (3)
Material be tantalum nitride, conductivity 7400S/m.
6. Terahertz frequency range broadband Meta Materials wave absorbing device according to claim 1, which is characterized in that by by claim
1 wave absorbing device carries out equal proportion scaling, can change it and inhale wave frequency section.
7. a kind of Terahertz frequency range broadband Meta Materials wave absorbing device, which is characterized in that with Terahertz frequency range broadband described in claim 1
Meta Materials wave absorbing device is unit, is arranged in M*N two-dimension periodic, wherein M and N is positive integer.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111048910A (en) * | 2019-12-31 | 2020-04-21 | 浙江科技学院 | Metamaterial terahertz electromagnetic absorber |
| CN111129783A (en) * | 2020-01-10 | 2020-05-08 | 山西大学 | Function-reconfigurable metamaterial broadband polarization converter/absorber |
| CN111244635A (en) * | 2020-01-15 | 2020-06-05 | 合肥工业大学 | Metamaterial wave absorber |
| CN111883936A (en) * | 2020-09-03 | 2020-11-03 | 浙江科技学院 | Terahertz electromagnetic absorber based on metamaterial |
| CN112290229A (en) * | 2020-10-21 | 2021-01-29 | 厦门理工学院 | Multi-band easily-tuned terahertz wave absorber based on graphene |
| CN113193382A (en) * | 2021-05-20 | 2021-07-30 | 山东大学 | Wave absorber and electronic equipment |
| CN113690626A (en) * | 2021-08-18 | 2021-11-23 | 电子科技大学 | Wide-angle broadband metamaterial wave-absorbing structure and design method thereof |
| CN113809551A (en) * | 2021-09-07 | 2021-12-17 | 贵州民族大学 | Real-time controllable wave absorber based on loading of ferroelectric-ferromagnetic composite film |
| CN114062301A (en) * | 2021-11-12 | 2022-02-18 | 西南科技大学 | Dual-band metamaterial terahertz microfluidic sensor |
| CN114221118A (en) * | 2021-12-08 | 2022-03-22 | 哈尔滨工程大学 | Broadband metamaterial structure |
| WO2022120681A1 (en) * | 2020-12-10 | 2022-06-16 | 中国科学院深圳先进技术研究院 | Full-phase dynamic modulator |
| CN115032729A (en) * | 2022-06-28 | 2022-09-09 | 中国人民解放军国防科技大学 | Micro-nano structure based dual-waveband guidance laser absorption device and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111048910A (en) * | 2019-12-31 | 2020-04-21 | 浙江科技学院 | Metamaterial terahertz electromagnetic absorber |
| CN111129783A (en) * | 2020-01-10 | 2020-05-08 | 山西大学 | Function-reconfigurable metamaterial broadband polarization converter/absorber |
| CN111129783B (en) * | 2020-01-10 | 2020-12-25 | 山西大学 | Function-reconfigurable metamaterial broadband polarization converter/absorber |
| CN111244635A (en) * | 2020-01-15 | 2020-06-05 | 合肥工业大学 | Metamaterial wave absorber |
| CN111244635B (en) * | 2020-01-15 | 2021-09-14 | 合肥工业大学 | Metamaterial wave absorber |
| CN111883936A (en) * | 2020-09-03 | 2020-11-03 | 浙江科技学院 | Terahertz electromagnetic absorber based on metamaterial |
| CN112290229B (en) * | 2020-10-21 | 2022-04-29 | 厦门理工学院 | Multi-band easily-tuned terahertz wave absorber based on graphene |
| CN112290229A (en) * | 2020-10-21 | 2021-01-29 | 厦门理工学院 | Multi-band easily-tuned terahertz wave absorber based on graphene |
| WO2022120681A1 (en) * | 2020-12-10 | 2022-06-16 | 中国科学院深圳先进技术研究院 | Full-phase dynamic modulator |
| CN113193382A (en) * | 2021-05-20 | 2021-07-30 | 山东大学 | Wave absorber and electronic equipment |
| CN113690626B (en) * | 2021-08-18 | 2022-07-29 | 电子科技大学 | Wide-angle broadband metamaterial wave-absorbing structure and design method thereof |
| CN113690626A (en) * | 2021-08-18 | 2021-11-23 | 电子科技大学 | Wide-angle broadband metamaterial wave-absorbing structure and design method thereof |
| CN113809551A (en) * | 2021-09-07 | 2021-12-17 | 贵州民族大学 | Real-time controllable wave absorber based on loading of ferroelectric-ferromagnetic composite film |
| CN113809551B (en) * | 2021-09-07 | 2022-07-15 | 贵州民族大学 | Real-time controllable wave absorber based on loading of ferroelectric-ferromagnetic composite film |
| CN114062301A (en) * | 2021-11-12 | 2022-02-18 | 西南科技大学 | Dual-band metamaterial terahertz microfluidic sensor |
| CN114062301B (en) * | 2021-11-12 | 2023-08-18 | 西南科技大学 | Double-frequency-band metamaterial terahertz micro-current sensor |
| CN114221118A (en) * | 2021-12-08 | 2022-03-22 | 哈尔滨工程大学 | Broadband metamaterial structure |
| CN114221118B (en) * | 2021-12-08 | 2024-03-26 | 哈尔滨工程大学 | Broadband metamaterial structure |
| CN115032729A (en) * | 2022-06-28 | 2022-09-09 | 中国人民解放军国防科技大学 | Micro-nano structure based dual-waveband guidance laser absorption device and preparation method thereof |
| CN115032729B (en) * | 2022-06-28 | 2024-02-13 | 中国人民解放军国防科技大学 | Dual-band guided laser absorption device based on micro-nano structure and preparation method thereof |
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