CN108539431A - Passband embedded type frequency based on parallel LC resonators load selects wave-absorber - Google Patents
Passband embedded type frequency based on parallel LC resonators load selects wave-absorber Download PDFInfo
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- CN108539431A CN108539431A CN201810243553.8A CN201810243553A CN108539431A CN 108539431 A CN108539431 A CN 108539431A CN 201810243553 A CN201810243553 A CN 201810243553A CN 108539431 A CN108539431 A CN 108539431A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
- H01Q17/008—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0093—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices having a fractal shape
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- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The present invention proposes a kind of passband embedded type frequency selection wave-absorber loaded based on parallel LC resonators, mainly solve the problems, such as prior art construction complexity, include the wave-absorber unit of m × n periodic arrangement, wave-absorber unit includes the intermediate passband embedded type absorbent structure and band logical frequency selecting structures for being equipped with air layer of upper and lower cascade；Passband embedded type absorbent structure, including first medium plate, there are four strip patch, upper surface is printed with the Jerusalem cross-shaped patch of load parallel LC resonators and resistance for lower surface printing, and the two is connected by metallization VIA；Band logical frequency selecting structures, including second medium plate stacked on top of one another and third dielectric-slab；The upper surface of the second medium plate is printed with the first Q-RING patch and the sinuous cross-shaped patch of first end on its interior；The upper surface of third dielectric-slab is printed with standard cross-shaped patch, and lower surface is printed with the second Q-RING patch and the sinuous cross-shaped patch of second end on its interior.
Description
Technical field
The invention belongs to electromagnetic protection technical fields, are related to a kind of passband embedded type frequency selection wave-absorber, and in particular to
A kind of passband embedded type frequency selection wave-absorber based on parallel LC resonators load.
Background technology
Frequency selects wave-absorber that there is passband low-loss wave transparent, stopband significantly to inhale the filtering characteristic of wave.Compared to traditional
Frequency-selective surfaces can be avoided with outer mirror-reflection.While ensureing by safeguard overall performance, Dual base stations thunder is realized
Reduce up to scattering resonance state, achievees the purpose that stealthy.
Earliest frequency selection wave-absorber occurs in the form of inhaling wave wave transparent cover, the structure be include one layer of band logical FSS with
The composite layered structure of the suction wave surface of one layer of resistive.Existing frequency selection wave-absorber structure by by the passband of wave-absorber and
It inhales wavestrip frequency range to be provided separately, so that the passband of wave-absorber structure is located at and inhale wavestrip with super band, inhaled in wavestrip frequency range to reduce
ELECTROMAGNETIC REFLECTION.But the structure can form wider frequency gap between passband and suction wavestrip, and symmetrically another about passband
There are still forceful electric power magnetoreflections in the frequency range of side.Frequency selection wave-absorber with embedded type pass-band performance just can overcome these not
Foot.
The existing frequency selection wave-absorber structure with embedded type pass-band performance includes to inhale wave layer, supporting layer and wave transparent
Layer.Equivalent circuit is built to obtain circuit parameter according to required filtering characteristic, and loading resistor element is realized on inhaling wave layer
The effect of wave is inhaled, frequency is constituted and selects wave-absorber.Then passband is constituted in the series LC resonator of resistive element both ends load again
Embedded type frequency selects wave-absorber.In resonance, series LC resonator impedance is zero, is equivalent to a conducting wire connection gold resistance two
End makes resistive short, and resistance does not consume energy at this time, shields the wave-absorbing effect for inhaling wave layer, and in the frequency of resonant frequency both sides
Section still keeps microwave absorbing property, realizes passband insertion characteristic.Just because of this, this structure has to introduce additional series LC
Bias branch.Such as 2017, OmarAA and Shen Z et al. were in periodical《IEEE Transactions onAntennas&
Propagation》The PP volumes 99 phase article delivered " Absorptive Frequency-Selective of page 1
In Reflection and Transmission Structures ", a kind of passband embedded type wave-absorber knot of three-dimensional is disclosed
Structure, the structure along the unit of xyz reference axis periodic arrangements by forming.Unit includes leading for two layer medium plate and dihedral angle shape
Body tablet prints microstrip line on dielectric-slab, is loaded with resistance on microstrip line between microstrip line and conductor plate and is inhaled to realize
Wave energy.In order to realize the purpose of passband insertion, each of which resistance both ends are all connected with a series LC resonant branch, cause in this way
Structure complicates and is not easy to process.
For another example 2017, ShangY, Shen Z and Xiao S. et al. was in periodical《IEEE Transactions on
Antennas&Propagation》Article " the Frequency-Selective that 5581-5589 pages of 11 phase of volume 62 delivers
It is disclosed in Rasorber Based on Square-Loop and Cross-Dipole Arrays " a kind of based on Q-RING
Select wave-absorber structure with the passband embedded type frequency of cross dipole subarray, the structure by the periodic arrangement on the faces xoy list
Member composition.Unit includes two layer medium plate, and top dielectric plate prints Q-RING and crossed dipoles shape, in Q-RING each edge
It is used for realizing suction wave energy with resistance is loaded among crossed dipoles, and separately designs bias series LC resonance branch, realizes
The purpose of passband insertion.This additional bias series LC resonance branch so that complicated, circuit is lengthy and jumbled, integrated level is low, also
Must be individually designed according to the structure of wave-absorber, it otherwise can reduce the wave-absorbing effect of wave-absorber.
Invention content
It is an object of the invention to overcome above-mentioned deficiency in the prior art, it is proposed that one kind is added based on parallel LC resonators
The passband embedded type frequency of load selects wave-absorber, and the complicated skill of wave-absorber is selected for solving existing passband embedded type frequency
Art problem.
To achieve the goals above, the technical solution that the present invention takes is：
A kind of passband embedded type frequency selection wave-absorber based on parallel LC resonators load, including m × n periodical row
The wave-absorber unit of row, m >=6, n >=6；The wave-absorber cellular construction is as shown in Figure 1, including cascade up and down and intermediate be equipped with 2
The passband embedded type absorbent structure 1 and band logical frequency selecting structures 2 of the air layer of~10mm thickness, wherein：
The passband embedded type absorbent structure 1, including upper surface are printed with Jerusalem cross-shaped patch as shown in Figure 2
12, there are four the first medium plate 11 of strip patch 14, each arms of the Jerusalem cross-shaped patch 12 for lower surface printing
On be loaded with parallel LC resonators 121 and resistance 122, the resistance is 90~210 Ω, four strip patches 14
Both ends are connect by the horizontal strip structure both ends in 12 4 arm ends of metal throuth hole 13 and Jerusalem cross-shaped patch respectively；
The band logical frequency selecting structures 2, including second medium plate 21 stacked on top of one another and third dielectric-slab 22；Described
The upper surface of second medium plate 21 is printed with the first Q-RING patch 211 as shown in Figure 3 and in the first Q-RING patch 211
First end wriggle cross-shaped patch 212；The upper surface of the third dielectric-slab 22 is printed with standard cross-shaped patch 221,
Lower surface is printed with the second Q-RING patch 222 and the sinuous cross patch of second end in the second Q-RING patch 222
Piece 223.
The above-mentioned passband embedded type frequency selection wave-absorber based on parallel LC resonators load, the first medium plate 11,
Second medium plate 21 and third dielectric-slab 22, using the identical square plank of the length of side, size dimension is 6.5~9mm, thickness gauge
Very little is 0.5~1.5mm, and relative dielectric constant is 1.5~5.
The above-mentioned passband embedded type frequency based on parallel LC resonators load selects wave-absorber, the first Q-RING patch
Piece 211, structure are identical as Q-RING patch 222；The first end is wriggled cross-shaped patch 212, structure and the second end
The sinuous cross-shaped patch 223 in end is identical.
Compared with prior art, the present invention having the following advantages that：
1, the present invention realizes that passband embedded type frequency selects wave-absorber using parallel LC resonators load, humorous according to LC in parallel
Shake device resonance when impedance it is infinitely great, and the characteristic that electric current is zero on the main road of series connection with it prevents loaded resistance consumption electromagnetism
Wave energy realizes the insertion of wave transparent passband and inhales wave frequency band.Also, parallel LC resonators can be directly integrated in and be loaded with resistance
On the spider of Jerusalem cross-shaped patch, which no longer needs to arrange additional biasing circuit, can be used for simplifying existing
Passband embedded type frequency selects the structure of wave-absorber complexity.
2, the Jerusalem cross-shaped patch end of first medium plate of the present invention upper surface printing passes through through-hole and lower surface
Four strip patches connection forming circuit of printing realizes a symmetrical 2.5 dimension solid, and manufacturing process is simple, possesses
Compact structure unit.Symmetrical structure reduces wave-absorber to the polarized sensibility of incident electromagnetic wave, and 2.5 dimension structures reduce suction
Wave body reduces the size of wave-absorber unit to the sensibility of incident electromagnetic wave angle.
Description of the drawings
Fig. 1 is the overall structure diagram of the present invention；
Fig. 2 is the structural schematic diagram of Jerusalem cross-shaped patch of the present invention；
Fig. 3 is second medium plate vertical view of the present invention；
Fig. 4 is the embodiment of the present invention 1 on transverse electric mode (TE) the electromagnetic wave vertical incidence wave-absorber surface propagated along the directions-z
When reflectance factor and transmission coefficient curve graph；
Fig. 5 is the embodiment of the present invention 1 in transverse electric mode (TE) electromagnetic wave incident wave-absorber of the sides wave-absorber+z spatial,
Reflectance factor and transmission coefficient figure under incidence angles degree；
Fig. 6 is the embodiment of the present invention 1 in TM mode (TM) electromagnetic wave incident wave-absorber of the sides wave-absorber+z spatial,
Reflectance factor and transmission coefficient figure under incidence angles degree；
Specific implementation mode
In the following with reference to the drawings and specific embodiments, present invention is further described in detail：
Embodiment 1
Referring to Fig.1, a kind of passband embedded type frequency based on parallel LC resonators load selects wave-absorber, including m × n
The wave-absorber unit of periodic arrangement, m=30, n=30；The wave-absorber unit, including cascade passband embedded type is inhaled up and down
Wave structure 1 and band logical frequency selecting structures 2, centre are supported using nylon column, and air layer is set as 4.5mm.The passband insertion
Type absorbent structure 1, including upper surface be printed with Jerusalem cross-shaped patch 12 as shown in Figure 2, lower surface printing there are four
The first medium plate 11 of strip patch 14 is 2.65 which employs relative dielectric constant, and specification is 6.6mm × 6.6mm × 1mm's
Plank.The Jerusalem cross-shaped patch 12 is as described in Figure 2, and cross searching is located at dielectric-slab central axis, and cross main body is total
Long L is 6.6mm, and arm width is 1mm, and the horizontal strip structure length of arm end is 3.3mm, width 0.4mm.The Jerusalem
It is loaded with parallel LC resonators 121 and resistance 122 on 12 each arm of cross-shaped patch, in the resonator 121, inductance inductance value
For 0.4nH, capacitor's capacity 1.2pF, 122 resistance value of the resistance is 150 Ω, and four strip patches, 14 length is
3.3mm, width are 0.4mm, and both ends are horizontal by 12 4 arm ends of metal throuth hole 13 and Jerusalem cross-shaped patch respectively
The strip structure both ends connection set；The radius of plated-through hole 13 is 0.2mm.
The band logical frequency selecting structures 2, including second medium plate 21 stacked on top of one another and third dielectric-slab 22；Described
Second medium plate 21 uses relative dielectric constant for 3.5, and specification is the plank of 6.6mm × 6.6mm × 1mm.As shown in figure 3, thereon
Surface is printed with the first Q-RING patch 211 and the sinuous cross-shaped patch of first end in the first Q-RING patch 211
212；The third dielectric-slab 22 uses relative dielectric constant for 3.5, and specification is the plank of 6.6mm × 6.6mm × 1mm, thereon
Surface is printed with standard cross-shaped patch 221, the wide 0.5mm of arm, and lower surface is printed with the second Q-RING patch 222 and positioned at second
Second end in Q-RING patch 222 is wriggled cross-shaped patch 223.
The above-mentioned passband embedded type frequency based on parallel LC resonators load selects wave-absorber, the first Q-RING patch
Piece 211, structure is identical as Q-RING patch 222, ring width 0.4mm；The first end is wriggled cross-shaped patch 212,
Structure is wriggled with second end, and cross-shaped patch 223 is identical, and cross searching is located on the central axis of plank, and spider is wide
0.4mm, remaining each section design parameter are lx=1.2mm, ly=3.6mm.
Wherein, impedance is infinitely great when parallel LC resonators resonance, and electric current is zero on the main road of series connection with it, and resistance does not consume
Energy is just inhaling an embedded wave transparent passband among wave frequency band in this way, is realizing passband insertion characteristic, obtained passband embedded type
Absorbent structure 1.Band logical frequency selecting structures 2 enable to the electromagnetic wave through wave transparent passband to penetrate, and will be embedded in by passband
The reflection of electromagnetic wave of the remaining suction wave frequency band of type absorbent structure 1 makes it again by passband embedded type absorbent structure 1, realizes
Double absorption improves wave absorbing efficiency.
Embodiment 2
Structure it is identical as the structure of embodiment 1, only following parameter is made an adjustment：
The wave-absorber unit of m × n periodic arrangement of wave-absorber, m=6, n=6, first medium plate 11, second medium plate
21 and third dielectric-slab 22, use the length of side for 9mm, thickness 0.5mm, the square plank that relative dielectric constant is 1.5, resistance
122 resistance values are 90 Ω, and passband embedded type absorbent structure 1, the air layer thickness between band logical frequency selecting structures 2 is
10mm。
The structure of embodiment 3 is identical as the structure of embodiment 1, is only made an adjustment to following parameter：
The wave-absorber unit of m × n periodic arrangement of wave-absorber, m=100, n=100, first medium plate 11, second are situated between
Scutum 21 and third dielectric-slab 22, use the length of side for 6.5mm, thickness 1.5mm, the square plank that relative dielectric constant is 5,
122 resistance value of resistance is 210 Ω, passband embedded type absorbent structure 1, with the air layer thickness between band logical frequency selecting structures 2
For 2mm.
Below in conjunction with emulation experiment, the technique effect of the present invention is described further：
1. simulated conditions and content：
1) wave-absorber described in embodiment 1 is placed in xoy planes, using business simulation software HFSS_15.0 to above-mentioned implementation
Example 1 is anti-under conditions of the faces plane xoy are along-z direction vertical incidence where the vertical wave-absorber of transverse electric mode (TE) polarized electromagnetic wave
It penetrates coefficient and transmission coefficient has carried out simulation calculation, the results are shown in Figure 4.
2) wave-absorber described in embodiment 1 is placed in xoy planes, using business simulation software HFSS_15.0 to above-mentioned implementation
Reflectance factor and transmission of the example 1 under the faces plane xoy normal difference angle where transverse electric mode (TE) polarized electromagnetic wave and wave-absorber
Coefficient has carried out simulation calculation, and the results are shown in Figure 5.
3) wave-absorber described in embodiment 1 is placed in xoy planes, using business simulation software HFSS_15.0 to above-mentioned implementation
Reflectance factor and transmission of the example 1 under the faces plane xoy normal difference angle where TM mode (TM) polarized electromagnetic wave and wave-absorber
Coefficient has carried out simulation calculation, and the results are shown in Figure 6.
2. analysis of simulation result：
With reference to figure 4 under vertical incidence, the passband embedded type frequency selection based on parallel LC resonators load in embodiment 1
The centre frequency of wave-absorber, wave transparent passband is 7.07GHz, and insertion loss is only 0.52dB, and it is mark to be more than -3dB with transmission coefficient
Standard possesses 4% relative bandwidth.Be both less than -10dB as standard using reflectance factor and transmission coefficient, suctions wave frequency band for 5.2GHz~
6.72GHz and 7.73GHz~9.38GHz, wave transparent passband are located between two suction wave frequency bands, possess the characteristic of passband insertion.
With reference to figure 5 as can be seen that when incidence angle is less than 45 ° under transverse electric mode (TE) polarization, vertical incidence, wave transparent frequency are compared
Band is more than -3dB as standard using transmission coefficient, inhales wave frequency band and is both less than -10dB as standard using reflectance factor and transmission coefficient, implements
The passband embedded type frequency selection wave-absorber based on parallel LC resonators load still keeps the insertion of wave transparent passband to inhale wave frequency in example 1
The wave transparent microwave absorbing property of band is low to transverse electric mode electromagnetic wave (TE) incidence angle susceptibility.
With reference to figure 6 as can be seen that when incidence angle is less than 45 ° under TM mode (TM) polarization, vertical incidence, wave transparent frequency are compared
Band is more than -3dB as standard using transmission coefficient, inhales wave frequency band and is both less than -10dB as standard using reflectance factor and transmission coefficient, implements
The passband embedded type frequency selection wave-absorber based on parallel LC resonators load still keeps the insertion of wave transparent passband to inhale wave frequency in example 1
The suction wave wave transparent characteristic of band is low to TM mode electromagnetic wave (TM) incidence angle susceptibility.
The above simulation result shows that the present invention can inhale wave wave transparent characteristic realizing passband embedded type frequency selection wave-absorber
Under the premise of, realize that structure simplifies, and the symmetrical 2.5 dimension structure of the present invention reduce wave-absorber to incoming electromagnetic wave polarization and
The sensibility of angle.
Above description is only the embodiment of the present invention, does not constitute any limitation of the invention, it is clear that for this field
It, all may be without departing substantially from the principle of the invention, structure the case where after having understood the content of present invention and principle for professional
Under, various modifications and variations in form and details are carried out, but these modifications and variations based on inventive concept are still at this
Within the scope of the claims of invention.
Claims (5)
1. a kind of passband embedded type frequency based on parallel LC resonators load selects wave-absorber, which is characterized in that including m × n
The wave-absorber unit of a periodic arrangement, m >=6, n >=6；The wave-absorber unit, including cascade up and down and intermediate be equipped with air
The passband embedded type absorbent structure (1) and band logical frequency selecting structures (2) of layer, wherein：
The passband embedded type absorbent structure (1), including upper surface are printed with Jerusalem cross-shaped patch (12), lower surface print
The first medium plate (11) there are four strip patch (14) is made, is added on each arm of the Jerusalem cross-shaped patch (12)
Parallel LC resonators (121) and resistance (122) are loaded with, four strip patches (14) both ends pass through metal throuth hole (13) respectively
The strip structure both ends horizontal with four arm ends are connect；
The band logical frequency selecting structures (2), including second medium plate (21) stacked on top of one another and third dielectric-slab (22)；It is described
The upper surface of second medium plate (21) is printed with the first Q-RING patch (211) and in the first Q-RING patch (211)
First end is wriggled cross-shaped patch (212)；The upper surface of the third dielectric-slab (22) is printed with standard cross-shaped patch
(221), lower surface is printed with the second Q-RING patch (222) and the second end in the second Q-RING patch (222) is wriggled
Yan cross-shaped patch (223).
2. the passband embedded type frequency according to claim 1 based on parallel LC resonators load selects wave-absorber, special
Sign is：The first medium plate (11), second medium plate (21) and third dielectric-slab (22), using the identical square of the length of side
Plank, size dimension are 6.5~9mm, and thickness is 0.5~1.5mm, and relative dielectric constant is 1.5~5.
3. the passband embedded type frequency according to claim 1 based on parallel LC resonators load selects wave-absorber, special
Sign is：The resistance (122), resistance value are 90~210 Ω.
4. the passband embedded type frequency according to claim 1 based on parallel LC resonators load selects wave-absorber, special
Sign is：The first Q-RING patch (211), structure are identical as Q-RING patch (222)；The first end sinuous ten
Font patch (212), structure are identical as second end sinuous cross-shaped patch (223).
5. the passband embedded type frequency according to claim 1 based on parallel LC resonators load selects wave-absorber, special
Sign is：The passband embedded type absorbent structure (1), air layer thickness between band logical frequency selecting structures (2) is 2~
10mm。
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Cited By (11)
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|---|---|---|---|---|
| CN110137690A (en) * | 2019-05-13 | 2019-08-16 | 电子科技大学 | A kind of Terahertz frequency range broadband Meta Materials wave absorbing device |
| CN110311228A (en) * | 2019-06-27 | 2019-10-08 | 西安理工大学 | 2.5D ultra wide band frequency applied to ultra-wideband antenna selects surface texture |
| CN111900548A (en) * | 2020-08-28 | 2020-11-06 | 西安电子科技大学 | Ultra-wideband low-scattering metamaterial based on combination of wave-absorbing material and super surface |
| CN112332109A (en) * | 2020-10-22 | 2021-02-05 | 西安电子科技大学 | Broadband wave-transmitting type frequency selective wave absorber based on 2.5D structure |
| CN112467391A (en) * | 2020-11-16 | 2021-03-09 | 北京航空航天大学 | Inhale and pass through integrative controllable electromagnetic protection material |
| CN113329607A (en) * | 2021-05-31 | 2021-08-31 | 中国人民解放军空军工程大学 | Novel ultra-wideband wave absorbing unit and wave absorbing structure thereof |
| CN113381194A (en) * | 2020-12-25 | 2021-09-10 | 中国航空工业集团公司沈阳飞机设计研究所 | Frequency selective wave absorber |
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| CN115101944A (en) * | 2022-06-28 | 2022-09-23 | 北京航空航天大学 | Single-passband metamaterial frequency selective surface wave-absorbing structure |
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Inventor after: Jiang Wen Inventor after: Zhao Yifan Inventor after: Zhang Kunzhe Inventor after: Gong Shuxi Inventor after: Zhou Zhipeng Inventor after: Zhou Hao Inventor after: Li Zhao Inventor before: Jiang Wen Inventor before: Zhao Yifan Inventor before: Zhang Kunzhe Inventor before: Gong Shuxi |