CN106058482B - Transparent wideband electromagnetic wave absorbing device based on bilayer conductive film - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
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Abstract
The transparent wideband electromagnetic wave absorbing device based on bilayer conductive film that the invention proposes a kind of, for solving the narrow technical problem of existing wave absorbing device application range, including conductive film, first medium layer, second dielectric layer, third dielectric layer and bottom plate, first medium layer and third dielectric layer use transparent medium plate, second dielectric layer uses transparent medium plate or air dielectric, three dielectric layers arrange from top to bottom, form the dielectric layer of stepped construction, bottom plate uses transparent conductive film, it is printed on the lower surface of third dielectric layer, the array that the array and a cross transparent conductive film of (m+1) × (n+1) that conductive film is made of m × n square transparent conductive film form is combined, it is printed on the upper surface of first medium layer.The present invention realizes high light transmittance, can be used for aircraft cabin glass, requires the electromagnetism of the microwave system of high light transmittance anti-interference based on wireless telecommunication systems etc. between PCB novel chip while guaranteeing to inhale wide wavestrip and suction wave rate.
Description
Technical field
The invention belongs to microwave electromagnetic stealth technology fields, are related to a kind of transparent wideband electromagnetic wave absorbing device, and in particular to one
Transparent wideband electromagnetic wave absorbing device of the kind based on bilayer conductive film, the electromagnetism that can be used for the more demanding field of translucency are anti-interference
And electromagnetic compatibility.
Background technique
With the development of electronic information technology, influence of the electromagenetic wave radiation to environment increasingly increases, on airport, airplane flight
Sometimes because that Electromagnetic Interference can not take off is overdue;In hospital, mobile phone can often interfere the normal of various electronic instrument for diagnosing and curing diseases devices
Work.Therefore, electromagnetic pollution is administered, finds a kind of wave absorbing device part that can be kept out and weaken electromagenetic wave radiation, it has also become electromagnetism
A big project.On the other hand, research has shown that, Microwave electromagnetic irradiation can cause living organism, nervous centralis, cardiovascular system,
The illness of crystalline lens, blood etc., countries in the world will appreciate that the seriousness of this problem, carry out in succession to electromagnetism spoke
The research of harm and protection is penetrated, and makes electromagnetic radiation sanitary standard.
Electromagnetic wave absorption device or wave absorbing device refer in particular to convert by incident electro-magnetic wave absorption and electromagnetic energy therein
It is very widely used in many fields for thermal energy or the electromagnetic device of the energy of other forms.Traditional wave absorbing device structure
It is Salisbury screen wave absorbing device, it is made of sheet resistance layer, quarter-wave dielectric layer and metal backing, surface electricity
The impedance of resistance layer matches with free space, makes incident electromagnetic wave completely into dielectric layer, and using interference cancellation principle, reaches
To the purpose for absorbing specific wavelength electromagnetic wave.But due to the characteristic of structure itself, the suction wavestrip of Salisbury screen wave absorbing device
Width is limited.E.F.Knott et al. designs Jaumann wave absorbing device based on the principle of Salisbury screen wave absorbing device, wave absorbing device benefit
It is arranged alternately with each other composition with multilayer resistor disc and medium substrate, generates multiple absorption peaks to intercouple, compared to
Salisbury screen wave absorbing device has broader suction wavestrip wide, it is therefore apparent that the problem of this structure maximum is to considerably increase suction
The thickness and quality of wave device.
Then, in order to reduce the thickness of wave absorbing device, there is Meta Materials wave absorbing device, this wave absorbing device generallys use three-layered node
Structure:Its top layer is the frequency-selective surfaces (FSS) that periodical metal pattern is constituted, and the second layer is dielectric layer, and third layer is metal
Bottom plate.By adjusting the shape of structure, size, thickness, metal material and intermediate medium layer material, thus it is possible to vary inhale wavestrip it is wide and
Wave rate is inhaled, still, this kind of wave absorbing device inhales the wide relative narrower of wavestrip, and wide in order to expand suction wavestrip, researcher carries out its structure
It improves, the periodic patterns at top use conductive film, and centre is dielectric layer, and bottom plate uses metal material, broadband may be implemented
Inhale the effect of wave.But above-mentioned various structures mostly use non-transparent material, the occasion that some pairs of translucency require cannot
It is applicable in, such as aircraft cabin glass, needs to observe internal structure based on wireless telecommunication systems etc. between PCB novel chip and prevent electricity
The microwave system of magnetic radiation." one has been delivered on Acta Physica Sinica (Vol.65, No.5 (2016) 054101) in south Jiang Yan in 2016 etc.
Ultra wide band wave absorbing device of the kind based on graphene ", it is wide in order to expand wave absorbing device suction wavestrip, a kind of work is proposed based on grapheme material
Make in the ultra wide band wave absorbing device model unit of S/C wave band, it is mainly by up of three-layer:Upper layer is the stone of square circular mixing ring structure
Black alkene frequency-selective surfaces (FSS) layer;Middle layer is that relative dielectric constant is εr=1.05, with a thickness of the dielectric-slab of 13mm;Bottom
Layer is metal copper soleplate, and conductivityσ=5.8 × 107s/m, with a thickness of 0.1mm, surface square circular mixing ring graphene is just
There is a bi-layer substrate of the square circular hybrid loop shape of identical size in lower section, and first layer is the silica with a thickness of 0.5 μm, and second
Layer is the crystalline silicon with a thickness of 9.5 μm.The surface impedance of graphene is adjusted, so that inhaling wavestrip width is 2.1-9.5GHz, in view of mould
The high symmetry of type, the wave absorbing device model of proposition show the microwave absorbing property insensitive to incident wave polarization.The wave absorbing device
Design object is to realize the broadband wave-absorbing effect of any angle incidence wave, still, due to using silica and multicrystalline silicon substrate
And metal base plate, there is also the non-transparent and big defects of quality, are not suitable for light transmission applications, are also not easy to and microwave system
It is integrated.
Summary of the invention
It is an object of the invention to overcome the problems of the above-mentioned prior art, propose a kind of based on bilayer conductive film
Transparent wideband electromagnetic wave absorbing device realizes high light transmittance by using transparent material, for solving existing wave absorbing device application range
Narrow technical problem.
To achieve the goals above, the technical scheme adopted by the invention is as follows:
A kind of transparent wideband electromagnetic wave absorbing device based on bilayer conductive film, including first medium layer 2, second dielectric layer 3,
Third dielectric layer 4 and bottom plate 5, three dielectric layers 2,3 and 4 arrange from top to bottom, form the dielectric layer of stepped construction, bottom plate 5
It is printed on the lower surface of third dielectric layer 4;The first medium layer 2 and third dielectric layer 4 use transparent medium plate, wherein the
The upper surface of one dielectric layer 2 is printed with conductive film 1, which is made of m × n square transparent conductive film 11
Array and the array that forms of a cross transparent conductive film 12 of (m+1) × (n+1) be combined, wherein m >=2, n >=2, institute
Bottom plate 5 is stated using transparent conductive film, is printed on the lower surface of third dielectric layer 4;The second dielectric layer 3 uses transparent medium
Plate or air dielectric.
The above-mentioned transparent wideband electromagnetic wave absorbing device based on bilayer conductive film, the square transparent conductive film 11,
Cross transparent conductive film 12 and bottom plate 5 are all made of tin indium oxide or grapheme material, wherein square transparent conductive film
11 and cross transparent conductive film 12 sheet resistance be RS1, and 60 Ω/sq≤RS1≤100Ω/sq;The sheet resistance of bottom plate (5) is RS,
And 5 Ω/sq≤RS≤10Ω/sq。
The above-mentioned transparent wideband electromagnetic wave absorbing device based on bilayer conductive film, the m × n square transparent conductive thin
The array that a cross transparent conductive film 12 of array and (m+1) × (n+1) that film 11 forms forms, the period is a, square
The distance between shape transparent conductive film 11 and cross transparent conductive film 12 are b, and b=a/2.
The above-mentioned transparent wideband electromagnetic wave absorbing device based on bilayer conductive film, the first medium layer 2 and third medium
The relative dielectric constant of layer 4 is εr1, and 2≤εr1≤4。
The above-mentioned transparent wideband electromagnetic wave absorbing device based on bilayer conductive film, the opposite dielectric of the second dielectric layer 3
Constant is εr2, and 1≤εr2≤3.9。
Compared with prior art, the present invention having the following advantages that:
1. the present invention forms lamination knot since first medium layer, second dielectric layer and third dielectric layer arrange from top to bottom
Structure, first medium layer and third dielectric layer are all made of transparent medium plate, and second dielectric layer uses transparent medium plate or air dielectric,
Conductive film and bottom plate use the good graphene of light transmission or indium tin oxide material;Compared with prior art, guaranteeing to inhale wavestrip
While wide and suction wave rate, the good light permeability energy of electromagnetic wave absorption device is realized, application range is expanded.
2. array and (m+ that the present invention is made of due to the conductive film of use m × n square transparent conductive film
1) array of a cross transparent conductive film composition of × (n+1) is combined, which is RS1, and 60 Ω/sq
≤RS1≤ 100 Ω/sq, resistivity with higher, bottom plate use sheet resistance for RS, and 5 Ω/sq≤RS≤ 10 Ω/sq conduction
Film has lower resistivity.The conductive film of the double-deck difference sheet resistance is realized multiple reflection of electromagnetic wave and is hindered with free space
Anti- matching produces the effect that wave is inhaled in broadband, high suction wave rate is realized in bandwidth of operation, and since the conductive film of use has
Have the characteristics that light weight and thickness are thin, while guaranteeing broadband wave-absorbing effect and high suction wave rate, reduces the thickness of wave absorbing device
And weight, practicability is had more, convenient for integrated with microwave system.
3. the present invention is since conductive film and bottom plate use graphene or indium tin oxide material, compared with prior art, tool
There is the features such as mechanical hardness is high, and chemical stability is good, and flexibility is good, can guarantee the stabilization of performance in a long time, use the longevity
It orders longer.
Detailed description of the invention
Fig. 1 is the overall structure diagram of the embodiment of the present invention 1;
Fig. 2 is the top view of the embodiment of the present invention 1;
Fig. 3 is the suction wave rate simulation curve of the embodiment of the present invention 1;
Fig. 4 is the reflection coefficient simulation curve of the embodiment of the present invention 1;
Fig. 5 is the suction wave rate simulation curve of the embodiment of the present invention 4;
Fig. 6 is the reflection coefficient simulation curve of the embodiment of the present invention 4.
Specific embodiment
With reference to the accompanying drawings and examples, the invention will be further described:
Embodiment 1:
Referring to Fig.1, including conductive film 1, first medium layer 2, second dielectric layer 3, third dielectric layer 4 and bottom plate 5,
In, three dielectric layers 2,3 and 4 arrange from top to bottom, form the dielectric layer of stepped construction;Bottom plate 5 is printed on third dielectric layer 4
Lower surface, conductive film 1 are printed on the upper surface of first medium layer 2, and the conductive film 1 is by m × n square transparent conductive thin
The array that a cross transparent conductive film 12 of array and (m+1) × (n+1) that film 11 forms forms is combined, the present embodiment
What the middle array formed using 2 × 2 square transparent conductive films 11 and 3 × 3 cross transparent conductive films 12 were formed
Array, specific structure are as shown in Figure 2.
First medium layer 2 and third dielectric layer 4 are all made of relative dielectric constant εr1For 2.7 square polycarbonate medium
Plate, the wherein thickness h of first medium layer 21=1mm, the thickness h of third dielectric layer 43=1mm;Second dielectric layer uses h2=
1mm, relative dielectric constant εr2For 2 square polymethacrylates (PMMA) dielectric-slab, three dielectric-slabs for realizing
The layer coupling of electromagnetic wave.
Bottom 5 uses sheet resistance RSFor the square indium tin oxide films of 7 Ω/sq, due to the indium tin oxide films have compared with
High conductivity, electromagnetic wave approach therebetween when major part energy reflected, only few electromagnetic wave energy can be penetrated and be passed
It is defeated to arrive the bottom plate other side, reduce transmission of the wave absorbing device for electromagnetic wave energy.
Referring to Fig. 2, in order to further increase the microwave absorbing property of wave absorbing device, the present invention uses square transparent conductive film 11
With cross transparent conductive film 12, using a as the period in planar space, b is that spacing is arranged alternately to form composite construction.
Under the action of incident electromagnetic wave, strong coupling occurs for composite conductive thin film and incident magnetic, generates an electroresponse, separately
Outside, the geometric parameter in wave cellular construction is inhaled by regulation, so that composite conductive thin film and bottom conductive film generate a magnetic
Response, two responses generate coupling in a very wide frequency range, so that it is wide to improve suction wavestrip.In order to allow wave absorbing device to meet matching
Characteristic enters inside wave absorbing device when enabling electromagnetic wave incident to its surface, to the maximum extent to farthest be absorbed into
Radio magnetic wave can carry out theory analysis and size design using the method for equivalent circuit.Suction wave based on bilayer film resistance
Device can be equivalent to a resonant tank in parallel in resonant state, wherein the resistance value R for generating electromagnetic wave loss can be following
Formula estimate to obtain:
Wherein S=D2, D is the period for inhaling wave unit, and A is the surface area of film resistor.This is for loss resistance value
Evaluation method is very identical with square patch, but for the conductive film of other structures, need to the cellar area A on surface into
Row amendment, such as the cross conductive film in the present invention, are estimated to the loss resistance R to this structure, in formula
A should be the area for being parallel to incident electric fields part.According to such rule, design obtains the structural parameters of conductive film 1:Its
Period a=20mm, spacing b are 10mm, the side length W of square transparent conductive film 111For 7mm, cross conductive film 12
Length W2For 12mm, width W3For 6mm, above two membrane array is all made of sheet resistance RS1For 80 Ω/sq indium tin oxide films.
Embodiment 2
Embodiment 2 is identical as the structure of embodiment 1, and following parameter makes an adjustment:
First medium layer 2 and third dielectric layer 4 are all made of relative dielectric constant εr1For 4 square polymethacrylates
(PMMA) dielectric-slab, the wherein thickness h of first medium layer 21=1mm, the thickness h of third dielectric layer 43=1mm;Second dielectric layer 3
Select thickness h2For 2mm, relative dielectric constant εr2For 3.9 square quartz glass medium plate;11 He of square conductive film
Cross conductive film 12 uses sheet resistance RS1For 100 Ω/sq graphene film, bottom 5 uses sheet resistance RSJust for 10 Ω/sq
Rectangular indium tin oxide films, the side length W of square conductive film 111For 9mm.
Embodiment 3
The structure of embodiment 3 is identical as the structure of embodiment 1, and following parameter makes an adjustment:
First medium layer 2 and third dielectric layer 4 are all made of relative dielectric constant εr1For 2 square polymethacrylates
(PMMA) dielectric-slab, the wherein thickness h of first medium layer 21=2.5mm, the thickness h of third dielectric layer 43=2.5mm;Second is situated between
Matter layer 3 selects thickness h2For 2.5mm, relative dielectric constant εr2For 2.7 square polycarbonate medium plate;Square conductive is thin
Film 11 and cross conductive film 12 use sheet resistance RS1For 60 Ω/sq graphene film, bottom plate 5 uses sheet resistance RSFor 5 Ω/sq
Square indium tin oxide films.
Embodiment 4
Embodiment 4 has done following adjustment for the structure and parameter of embodiment 1:
Second layer medium 3 selects relative dielectric constant εr2For 1 square air dielectric.
Embodiment 5
Embodiment 5 has done following adjustment for the structure and parameter of embodiment 2:
Second layer medium 3 selects relative dielectric constant εr2For 1 square air dielectric.
Embodiment 6
Embodiment 6 has done following adjustment for the structure and parameter of embodiment 3:
Second layer medium 3 selects relative dielectric constant εr2For 1 square air dielectric.
Below in conjunction with emulation experiment, technical effect of the invention is described further:
1. simulated conditions and content
1.1 are carried out using reflection coefficient curve of the business simulation software HFSS_15.0 to wave absorbing device in above-described embodiment 1
Simulation calculation, result are as shown in Figure 3.
1.2 are imitated using suction wave rate curve of the business simulation software HFSS_15.0 to wave absorbing device in above-described embodiment 1
It is true to calculate, as a result as shown in Figure 4.
1.3 are carried out using reflection coefficient curve of the business simulation software HFSS_15.0 to wave absorbing device in above-described embodiment 4
Simulation calculation, structure are as shown in Figure 5.
1.4 are imitated using suction wave rate curve of the business simulation software HFSS_15.0 to wave absorbing device in above-described embodiment 4
It is true to calculate, as a result as shown in Figure 6.
2. simulation result
Referring to Fig. 3, the abscissa in figure is frequency, and unit GHz, range is 5GHz -21GHz, and ordinate is indicated to electricity
The reflection size of magnetic wave energy, unit dB, range are -21dB -0dB.As can be seen from Figure 3 7.5GHz -18.4GHz this
- 10dB is less than to the reflection of electromagnetic wave in a frequency range.
Referring to Fig. 4, abscissa is frequency in figure, and unit GHz, range is 5GHz -21GHz, and ordinate is indicated to normalizing
Change electromagnetic wave energy size, range is 0.3-1;The present invention is in this frequency range of 7.1GHz -18.5GHz as can be seen from Figure 4
0.9 is greater than to the absorptivity of electromagnetic wave,
Referring to Fig. 5, abscissa is frequency in figure, and unit GHz, range is 2GHz -18.5GHz.Ordinate is indicated to electricity
The reflection size of magnetic energy, unit dB, range are -15dB -0dB.The present invention is in 6.7GHz-as can be seen from Figure 5
- 10dB is less than to the reflection of electromagnetic wave in this frequency range of 13.7GHz.
Referring to Fig. 6, the abscissa in figure is frequency, and unit GHz, range is 2GHz -18.5GHz.Ordinate expression is returned
One changes electromagnetic energy size, and range is 0.3-1.As can be seen from the figure the present invention is in this frequency range of 6.7GHz-13.7GHz
0.9 is greater than to the absorptivity of electromagnetic wave.
The above simulation result explanation, absolute bandwidth of operation of the invention are greater than 7GHz, inhale the wide interior suction wave rate of wavestrip and are greater than
90%, compared with prior art, is guaranteeing that suction wave rate and suction wavestrip are wide simultaneously, embodying higher translucency and smaller matter
Amount.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, other any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present invention,
It should be equivalent substitute mode, be included within the scope of the present invention.
Claims (5)
1. a kind of transparent wideband electromagnetic wave absorbing device based on bilayer conductive film, including first medium layer (2), second dielectric layer
(3), third dielectric layer (4) and bottom plate (5), three dielectric layers (2,3,4) arrange from top to bottom, form the medium of stepped construction
Layer, bottom plate (5) are printed on the lower surface of third dielectric layer (4);It is characterized in that, the first medium layer (2) and third medium
Layer (4) uses transparent medium plate, wherein the upper surface of first medium layer (2) is printed with conductive film (1), the conductive film (1)
The array and a cross transparent conductive film of (m+1) × (n+1) being made of m × n square transparent conductive film (11)
(12) array formed is combined, wherein m >=2, n >=2, and the bottom plate (5) uses transparent conductive film, is printed on third Jie
The lower surface of matter layer (4);The second dielectric layer (3) uses transparent medium plate or air dielectric.
2. the transparent wideband electromagnetic wave absorbing device according to claim 1 based on bilayer conductive film, which is characterized in that described
Square transparent conductive film (11), cross transparent conductive film (12) and bottom plate (5) are all made of tin indium oxide or graphene
Material, wherein the sheet resistance of square transparent conductive film (11) and cross transparent conductive film (12) is RS1, and 60 Ω/sq≤
RS1≤100Ω/sq;The sheet resistance of bottom plate (5) is RS, and 5 Ω/sq≤RS≤10Ω/sq。
3. the transparent wideband electromagnetic wave absorbing device according to claim 1 based on bilayer conductive film, which is characterized in that described
The array of m × n square transparent conductive film (11) composition and a cross transparent conductive film (12) of (m+1) × (n+1)
The array of composition, period are a, between square transparent conductive film (11) and cross transparent conductive film (12) away from
From for b, and b=a/2.
4. the transparent wideband electromagnetic wave absorbing device according to claim 1 based on bilayer conductive film, which is characterized in that described
The relative dielectric constant of first medium layer (2) and third dielectric layer (4) is εr1, and 2≤εr1≤4。
5. the transparent wideband electromagnetic wave absorbing device according to claim 1 based on bilayer conductive film, which is characterized in that described
The relative dielectric constant of second dielectric layer (3) is εr2, and 1≤εr2≤3.9。
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