CN105896098B - A kind of broadband Terahertz meta-material absorber absorbing superposition based on multi-resonant - Google Patents

A kind of broadband Terahertz meta-material absorber absorbing superposition based on multi-resonant Download PDF

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CN105896098B
CN105896098B CN201610258722.6A CN201610258722A CN105896098B CN 105896098 B CN105896098 B CN 105896098B CN 201610258722 A CN201610258722 A CN 201610258722A CN 105896098 B CN105896098 B CN 105896098B
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CN105896098A (en
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罗振飞
周逊
孔维鹏
陈晨
王度
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Laser Fusion Research Center China Academy of Engineering Physics
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    • H01ELECTRIC ELEMENTS
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Abstract

The invention discloses a kind of broadband Terahertz meta-material absorbers that superposition is absorbed based on multi-resonant, belong to the Terahertz absorber in Meta Materials and function solenoid technical field, its object is to: including the graphical function material layer in upper layer, middle dielectric layer and lower metal reflecting layer;The graphical function material layer in upper layer is arranged by metamaterial modular construction, metamaterial modular construction includes circular ring structure, 4 parallel opens are offered on circular ring structure, spider is provided in circular ring structure, and four linking arms of spider and four groups of arc sections of circular ring structure connect;The lattice period a of metamaterial modular construction array is 10um to 100um, and the line width m of each metamaterial modular construction is 0.5um to 10um, and the brachium x of linking arm is 3um to 50um, and the width d of parallel open is 0.5um to 50um.The present invention is not necessarily to realize the purpose of Terahertz absorption band broadening by using the high mode of complex procedures, technology difficulty height, preparation cost.

Description

A kind of broadband Terahertz meta-material absorber absorbing superposition based on multi-resonant
Technical field
The invention belongs to Meta Materials and function solenoid technical fields, are related to a kind of Terahertz absorber.
Background technique
Terahertz (THz, 1 THz=1012Hz) radiation or THz wave are often referred to frequency in 0.1THz between 10THz Electromagnetic wave between microwave and infrared waves, is being to have pending comprehensive research in electromagnetic spectrum and go deep into electromagnetic spectrum The last one frequency window excavated.In recent years, with the stable development of THz source and Detection Techniques, Terahertz Technology is in object The fields such as reason, chemistry, biology, medicine, communication show huge scientific research value and application prospect.However, to make good use of one kind Frequency spectrum resource, the organic whole that radiation source, function element and detector are constituted should comprehensively be developed.Since tradition is based on The similar device of optics and electronics method is all less applicable in terahertz wave band and most conventional material is to THz wave Handling be extremely limited, suitable for the function element of Terahertz frequency range, (such as absorber, filter, is opened modulator at present Pass, polarizer etc.) it is still very deficient, which greatly limits the further development of Terahertz Technology.In recent years, both at home and abroad to artificial The extensive research of electromagnetism Meta Materials opens an effective technological approaches to develop high-performance Terahertz function element.People Work electromagnetism Meta Materials (abbreviation Meta Materials) refer to the artificial period with extraordinary physical property not available for natural conventional material Property structural material, its electromagnetic attributes can be controlled by design discrete cell structure, can realize negative index, perfection The odd number solutions such as lens and strong response is generated to THz wave or manipulation acts on.So far, people are by a variety of terahertzs Hereby functional material is combined with Meta Materials device architecture, is realized the manipulation effect different to THz wave, is had accumulated and much grind Study carefully achievement and the technical experience for reference, and with new function material it is continuous excavate, metamaterial structure is constantly brought forth new ideas, High-performance Terahertz function element still has very big development space.
Such as application No. is 201310419542.8 applications for a patent for invention to disclose a kind of multi-layer metamaterial unit structure Performance regulate and control method, be from top to bottom followed successively by coating metal, top dielectric, metallic intermediate layer, layer dielectric, bottom gold Belong to.Surface layer and metallic intermediate layer are made of the different becket of size, and exist simultaneously overlay region between this double layer of metal ring Domain and underlapped region, the underlying metal of structure are continuous metal film.In addition, attached drawing 4 disclose it is a variety of replace its table The metallic pattern of layer metal and metallic intermediate layer.However, can be seen that the absorber absorptivity 90% from attached drawing 3, Fig. 5, Fig. 7 (frequency range is 2.3THz to 2.4THz) to above frequency bandwidth substantially 0.1THz, and this meta-material absorber is usually operated at this Single frequency band, and absorption band is relatively narrow, seriously limits its application in practice.
In addition, the application for a patent for invention of application number 201410560036.5 also discloses a kind of broadband based on L-type structure Terahertz meta-material absorber, the Terahertz meta-material absorber include metallic reflector, dielectric layer and metal pattern layer, described Metallic reflector is one layer of continuous metallic film, and thickness is greater than the skin depth of work THz wave;Dielectric layer is located at gold Belong between reflecting layer and metal pattern layer, is silica membrane;Metal pattern layer is by the L-shaped unit metamaterial structure period Property arranges, and each L-type unit metamaterial structure is formed by connecting by orthogonal horizontal arm and upright arm.The terahertz Hereby meta-material absorber is simulated by the frequency domain algorithm in 2013 electromagnetic simulation software of CST Microwave Studio and is calculated, In vertical incidence IE wave, the absorber absorptivity 90% or more frequency bandwidth up to 1.4THz(frequency range be 2.8THz To 4.2THz), but the frequency bandwidth still seems smaller, still has biggish broadening space.
In the prior art, the working frequency range of the Terahertz absorber based on Meta Materials is often limited to device architecture, absorbs The device architecture of device can often determine the resonant bandwidth of the absorber.Since the resonance peak of most of Meta Materials devices is relatively only It stands, be separated from each other, therefore the corresponding Absorber Bandwidth of unimodal resonance is narrow;And the prior art generally by gradual change cellular construction, The modes such as multilayered structure stacks or various structures are compound reach resonance frequency band broadening purpose, and the mode of above-mentioned broadening is realized in technique Upper difficulty is larger, complex procedures, and preparation cost is high, is restricted the popularization of absorber.In addition, in the prior art, Terahertz Metal material of the absorber usually using the high conductivity such as gold, silver, a wide range of use of the metal material of the high conductivity such as gold, silver It seriously limits and other materials is applied in Terahertz absorber.
Summary of the invention
Goal of the invention of the invention is: in view of the problems of the existing technology, providing a kind of absorb based on multi-resonant and folds The broadband Terahertz meta-material absorber added, by optimizing the structure and size of metamaterial modular construction, thus using three layers Frequency bandwidth of the absorber absorptivity 90% or more is greatly improved in the case where build stack, without complex procedures, technique The mode that difficulty is high, preparation cost is high realizes the purpose of Terahertz absorption band broadening, promotes broadband Terahertz Meta Materials Absorber application in practice and its application efficiency is improved, so that preparation process is easily achieved, preparation cost is reduced.
To achieve the goals above, the technical solution adopted by the present invention are as follows:
A kind of broadband Terahertz meta-material absorber absorbing superposition based on multi-resonant, including the upper layer figure set gradually Shape function material layer, middle dielectric layer and lower metal reflecting layer;The graphical function material layer in upper layer is by Meta Materials list Meta structure arranges, and the metamaterial modular construction includes circular ring structure, along the circumferential direction of circular ring structure on the circular ring structure 4 parallel opens are uniformly provided with, spider is provided in the circular ring structure, four linking arms one of the spider are a pair of It should be connect with the middle part of four groups of arc sections of circular ring structure;The lattice period a of the metamaterial modular construction array be 10um extremely 100um, the line width m of each metamaterial modular construction are 0.5um to 10um, and the brachium x of the linking arm is 3um to 50um, institute The width d for stating parallel open is 0.5um to 50um.
Wherein, the graphical function material layer in the upper layer with a thickness of 0.05um to 20um, and the graphical function material in upper layer The conductivity of the bed of material is greater than 103S/m。
Wherein, the material of the graphical function material layer in the upper layer is metal phase hypovanadic oxide or graphite.
Wherein, the middle dielectric layer with a thickness of 0.1um to 20um, and the dielectric constant of middle dielectric layer is greater than 2 Dielectric.
Wherein, the material of the middle dielectric layer is silica or polyimides.
Wherein, the lower metal reflecting layer is the continuous metal film made of the metal material of high conductivity, described Lower metal reflecting layer with a thickness of 0.05um to 1um.
Wherein, the thickness in the lower metal reflecting layer is greater than the skin depth that becomes for lower metal reflecting layer of THz wave Degreeδ Metal,δ MetalCalculation formula are as follows:δ Metal=(πυ THz μ Metal σ Metal)-1/2, whereinυ THzFor THz wave frequency,μ MetalFor metallic magnetic Conductance,σ MetalFor conductivity metal.
Wherein, the metal material of the high conductivity is gold, silver, copper or aluminium.
In conclusion by adopting the above-described technical solution, the beneficial effects of the present invention are:
1, in the present invention, the graphical function material layer in the upper layer of the absorber is arranged by metamaterial modular construction, and The metamaterial modular construction forms special construction by circular ring structure and spider;Using above-mentioned special solution structure Meta Materials list When the absorber of member is worked, when the conductivity of the graphical function material layer in upper layer reaches 2.7 × 105When S/m, the electric field It is concentrated mainly between two neighboring metamaterial modular construction lower edges, and forms electricity between lower edges and primer Road is flowed back to, the LC resonance feature between metamaterial modular construction is shown as;Electric field at a certain frequency is mainly distributed on super material At the aperture slots of material list meta structure, electric current is formed into a loop in four fan-shaped arc sections, shows as metamaterial modular construction Internal LC resonance feature;To which apparent absorption peak spy occurs in position at or near the position frequency 1.71THz and 3.81THz Property, two absorption peaks, which are superimposed, to form wideband absorption band, and specific absorption rate peak can reach 99.99%, and absorber absorptivity is 90% or more Frequency bandwidth up to 2.1THz, thus using three-decker stack in the case where greatly improve absorber absorptivity 90% Above frequency bandwidth, and only need to be multiple without other process using the technique preparation that existing three-decker stacks The purpose that the broadening of Terahertz absorption band is realized in mode miscellaneous, technology difficulty is high, preparation cost is high, promotes broadband Terahertz Meta-material absorber application in practice and its application efficiency is improved, so that preparation process is easily achieved, preparation cost drop It is low.
2, in the present invention, the material of the graphical function material layer in upper layer is metal phase hypovanadic oxide or graphite, works as titanium dioxide Vanadium film conductivity reaches 2.7 × 105When S/m, vanadium dioxide film completes semiconductor-metal and is mutually turned into metal phase, phase transformation The mutation of four orders of magnitude can occur for the conductivity of vanadium dioxide film in the process, change to ~ 10 by ~ 10S/m5S/m, two Vanadium oxide film changes in the impedance that phase transition process causes absorber, absorber impedance and free sky when specific frequency Between impedance when reaching matching, the THz wave of the frequency enters absorber inner wall to the maximum extent, generate resonance with absorber, Absorber is set to reach maximum to the absorption loss of THz wave;When conductivity becomes 2.7 × 105When S/m, 1.71THz and In 3.81THz wideband segment limit, absorber impedance reaches matched well with free space impedance, and corresponding THz wave absorbs Rate is high, and reflectivity is low, and absorber can reach 99.9% to the absorptivity of THz wave at frequency 1.71THz and 3.81THz, The frequency bandwidth that absorption efficiency is more than 97% is about 1.54THz, increases 90% relative to semiconductor modulation amplitude;If being replaced with gold Vanadium dioxide, structure is constant, and absorber greatly reduces the absorption intensity of THz wave, this and previous most of graphical golden films The strong assimilation effect that Meta Materials generate is dramatically different, thus the functional materials such as relatively low vanadium dioxide of conductivity more suitable for The absorption of the structure has widened absorber to the selection face of patterned material significantly, has promoted the conductivity such as vanadium dioxide relatively Application and the development of low functional material.
Detailed description of the invention
Fig. 1 is the array schematic diagram of metamaterial modular construction of the invention;
Fig. 2 is the structural schematic diagram of metamaterial modular construction of the invention;
Fig. 3 is the main view of metamaterial modular construction of the invention;
Numerical simulation when Fig. 4 is the material selection metal phase hypovanadic oxide of present invention function material layer graphical at the middle and upper levels Absorptivity figure;
Fig. 5 is the field distribution of frequency metamaterial modular construction at 1.71THz in embodiment one;
Fig. 6 is the current density distribution in frequency face XY of metamaterial modular construction at 1.71THz in embodiment one;
Fig. 7 is the current density distribution in frequency face ZY of metamaterial modular construction at 1.71THz in embodiment one;
It can be seen that from Fig. 5,6,7, which is concentrated mainly between two neighboring metamaterial modular construction lower edges, and Current loop is formed between lower edges and primer, shows as the LC resonance feature between metamaterial modular construction;
Fig. 8 is the field distribution of frequency metamaterial modular construction at 3.81THz in embodiment one;
Fig. 9 is the current density distribution in frequency face XY of metamaterial modular construction at 3.81THz in embodiment one;
From Fig. 8,9 as can be seen that the electric field is mainly distributed on from the aperture slots of metamaterial modular construction, electric current is at four Forming circuit, shows as the LC resonance feature inside metamaterial modular construction in fan-shaped arc section;
Figure 10 is the THz wave absorption spectra of the absorber in different parallel open width d values in embodiment one;
As seen from Figure 10, the reduction of opening width d and causes resonance frequency to reduce, absorption band so that equivalent capacity C increases Wide constriction;
Figure 11 is the THz wave absorption spectra of the absorber in different crystalline lattice period a value in embodiment one;
It can be seen from figure 11 that the resonance frequency at low frequency is gradually with the increase of metamaterial modular construction lattice period It moves to right, the resonance frequency variation of high frequency treatment is smaller, this is primarily due to the increase of metamaterial modular construction lattice period so that phase Equivalent capacity between adjacent two metamaterial modular constructions becomes smaller, and the LC resonance frequency between metamaterial modular construction increases, and makes Obtain absorptivity bandwidth constriction;
Numerical simulation absorptivity figure when Figure 12 is the material selection graphite of present invention function material layer graphical at the middle and upper levels;
Wherein, appended drawing reference are as follows: the graphical function material layer in 1-upper layer, 2-middle dielectric layers, the reflection of 3-lower metals Layer, 11-arc sections, 12-spiders, 13-parallel opens, 14-linking arms.
Specific embodiment
With reference to the accompanying drawing, the present invention is described in detail.
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right The present invention is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, not For limiting the present invention.
A kind of broadband Terahertz meta-material absorber absorbing superposition based on multi-resonant, which includes upper layer pattern Change function material layer 1, middle dielectric layer 2 and lower metal reflecting layer 3, wherein middle dielectric layer 2 is located at the graphical function in upper layer Between material layer 1, lower metal reflecting layer 3.
The graphical function material layer 1 in the upper layer is and the super material as made of several metamaterial modular construction array arrangements The lattice period a of material unit array of structures is 10um to 100um.The metamaterial modular construction is a kind of special cellular construction, Metamaterial modular construction includes circular ring structure and spider 12, which is located at circular ring structure and forms " ⊕ " type structure.It should Four groups of parallel opens 13 are also provided on circular ring structure, four groups of parallel opens 13 equably along the circumferentially distributed of circular ring structure, and The two sides of every group of parallel open 13 are mutually parallel;Circular ring structure is divided into four groups of sector structures by four groups of parallel opens 13 Arc section 11.The spider 12 includes four linking arms 14, and four linking arms 14 are circumferential in a manner of 90 ° of mutual angle to be arranged, And four linking arms 14 are all connected to the spider 12 that same point forms cross-shaped structure.The tie point of four linking arms 14 with The center of circle of circular ring structure is overlapped, and the medium position of the arc section 11 of the other end and corresponding position of each linking arm 14 connects It connects, thus four linking arms 14 connect one to one with four groups of arc sections 11.The line width m of each metamaterial modular construction is 0.5um to 10um, the brachium x of every linking arm 14 are 3um to 50um, the width d of each parallel open 13 be 0.5um extremely 50um。
The graphical function material layer 1 in the upper layer with a thickness of 0.05um to 20um, and the graphical function material layer 1 in upper layer Material is not limited to the high conductivity metals such as gold, silver, copper or aluminium, only needs the conductivity of the graphical function material layer 1 in the upper layer big In 103S/m.Preferably, the material of the graphical function material layer 1 in upper layer is metal phase hypovanadic oxide or graphite.
The thickness h of the middle dielectric layer 2 is 0.1um to 20um, and electricity of the dielectric constant of middle dielectric layer 2 greater than 2 is situated between Matter.Preferably, the material of middle dielectric layer 2 is silica or polyimides.
The lower metal reflecting layer 3 is the continuous metal film made of the metal material of high conductivity, and lower metal Reflecting layer 3 with a thickness of 0.05um to 1um.Preferably, the metal material of the high conductivity is gold, silver, copper or aluminium.
In order to obtain the absorption maximum to THz wave, by the structure and size for designing and optimizing metamaterial modular construction Etc. parameters, the impedance of impedance and free space that Meta Materials are made at special frequency channel match, incident electromagnetic wave is super at this time The reflectivity of material surface is minimum, if one layer of sufficiently thick metallic film of plated underlayer at this time, makes transmissivity become 0, then terahertz Hereby wave will enter to the maximum extent inside absorber and be absorbed loss.In order to make THz wave transmissivity 0, by lower metal The thickness design in reflecting layer 3 is the skin depth for lower metal reflecting layer 3 greater than THz waveδ Metal,δ MetalCalculating it is public Formula are as follows:δ Metal=(πυ THz μ Metal σ Metal)-1/2, whereinυ THzFor THz wave frequency,μ MetalFor metal magnetic conductivity,σ MetalFor metallic conductance Rate.
Embodiment 1
A kind of broadband Terahertz meta-material absorber absorbing superposition based on multi-resonant, which includes upper layer pattern Change function material layer 1, middle dielectric layer 2 and lower metal reflecting layer 3.Graphical function material layer 1 uses metal at the middle and upper levels for it For phase hypovanadic oxide as material, graphical 1 conductivity of function material layer in upper layer is 2.7 × 105S/m, the graphical function material in upper layer The bed of material 1 with a thickness of 0.3um.The geometric dimension of the metamaterial modular construction of the graphical function material layer 1 in upper layer are as follows: linking arm 14 Brachium x be 7.5um, the line width m of metamaterial modular construction is 3um, and the width d of parallel open 13 is 5um;Metamaterial unit knot The lattice period a of structure array is 29um.Middle dielectric layer 2 uses thickness h for the polyimides of 13um;Lower metal reflecting layer 3 Use conductivity for 4.5 × 107S/m, with a thickness of 0.3um(0.1THz skin depth be 0.23um) continuous gold film.
By the absorber structure in the embodiment through 2014 strip method device of business software CST Microwave Studio Simulation calculation is carried out to the absorptivity of its THz wave, THz wave vertical incidence meta-material absorber surface is orthogonal Magnetic field and electric field polarization direction are parallel with cross vertical direction in array element.Absorptivity calculation formula isA=1-|S 11|2-|S 21 |2, wherein |S 11| it is the modulus value of reflection coefficient, |S 21| it is the modulus value of transmission coefficient, since 3 thickness of lower metal reflecting layer is greater than The corresponding skin depth of 0.1THz, thereforeS 21Can be ignored, absorptivity calculation formula can simplify forA=1-|S 11|2.It is imitative The absorption spectra being really calculated is as shown in Figure 4, the results showed that the specific absorption rate peak of the meta-material absorber reaches 99.99% 1.95THz, the absorptivity within the scope of 1.71THz to 3.81THz are greater than 90%, and corresponding frequency bandwidth reaches 2.1THz.
Embodiment 2
The simulation calculation condition of the present embodiment is roughly the same with embodiment 1, the difference is that: by the graphical function in upper layer For energy material layer 1 using graphite as material, conductivity is 1 × 105S/m, the width of the parallel open 13 of metamaterial modular construction Degree d is 9um, and the lattice period a of metamaterial modular construction array is 27um.
By the absorber structure in the embodiment through 2014 strip method device of business software CST Microwave Studio Simulation calculation is carried out to the absorptivity of its THz wave, THz wave vertical incidence meta-material absorber surface is orthogonal Magnetic field and electric field polarization direction are parallel with cross vertical direction in array element.The absorption spectra that simulation calculation obtains such as Figure 12 institute Show, the specific absorption rate peak of the meta-material absorber reaches 99.99%@2.73THz, the suction within the scope of 2.01THz to 3.72THz Yield is greater than 90%, and corresponding frequency bandwidth reaches 1.71THz.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.

Claims (7)

1. a kind of broadband Terahertz meta-material absorber for absorbing superposition based on multi-resonant, it is characterised in that: including successively setting The graphical function material layer in the upper layer set (1), middle dielectric layer (2) and lower metal reflecting layer (3);The graphical function in upper layer Energy material layer (1) is arranged by metamaterial modular construction, and the metamaterial modular construction includes circular ring structure, the annulus knot Circumferential direction on structure along circular ring structure is uniformly provided with 4 parallel opens (13), is provided with spider (12) in the circular ring structure, Four linking arms (14) of the spider (12) correspond and connect with the middle part of four groups of arc sections (11) of circular ring structure;Institute The lattice period a for stating metamaterial modular construction array is 10um to 100um, and the line width m of each metamaterial modular construction is 0.5um To 10um, the brachium x of the linking arm (14) is 3um to 50um, and the width d of the parallel open (13) is 0.5um to 50um; The material of the graphical function material layer in upper layer (1) is metal phase hypovanadic oxide or graphite.
2. a kind of broadband Terahertz meta-material absorber for absorbing superposition based on multi-resonant as described in claim 1, special Sign is: the graphical function material layer in upper layer (1) with a thickness of 0.05um to 20um, and the graphical function material layer in upper layer (1) conductivity is greater than 103S/m。
3. a kind of broadband Terahertz meta-material absorber for absorbing superposition based on multi-resonant as described in claim 1, special Sign is: the middle dielectric layer (2) with a thickness of 0.1um to 20um, and the material of middle dielectric layer (2) is that dielectric constant is big In 2 dielectric.
4. a kind of broadband Terahertz meta-material absorber for absorbing superposition based on multi-resonant as claimed in claim 3, special Sign is: the material of the middle dielectric layer (2) is silica or polyimides.
5. a kind of broadband Terahertz meta-material absorber for absorbing superposition based on multi-resonant as described in claim 1, special Sign is: the lower metal reflecting layer (3) is the continuous metal film made of the metal material of high conductivity, the lower layer Metallic reflector (3) with a thickness of 0.05um to 1um.
6. a kind of broadband Terahertz meta-material absorber for absorbing superposition based on multi-resonant as claimed in claim 5, special Sign is: the thickness of the lower metal reflecting layer (3) is greater than the skin depth that becomes for lower metal reflecting layer (3) of THz wave Spend δMetal, δMetalCalculation formula are as follows: δMetal=(π υTHzμMetalσMetal)-1/2, wherein υTHzFor THz wave frequency, μMetalFor metallic magnetic Conductance, σMetalFor conductivity metal.
7. such as a kind of broadband Terahertz meta-material absorber for absorbing superposition based on multi-resonant described in claim 5 or 6, Be characterized in that: the metal material of the high conductivity is gold, silver, copper or aluminium.
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