CN112290229B - Multi-band easily-tuned terahertz wave absorber based on graphene - Google Patents
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- CN112290229B CN112290229B CN202011131054.3A CN202011131054A CN112290229B CN 112290229 B CN112290229 B CN 112290229B CN 202011131054 A CN202011131054 A CN 202011131054A CN 112290229 B CN112290229 B CN 112290229B
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Abstract
The invention provides a multi-band terahertz wave absorber easy to tune based on graphene, which comprises a wave absorber unit, wherein the wave absorber unit is provided with 9 layers of structures, graphene layers and Topas medium layers are arranged at intervals of 8 layers from top to bottom in sequence, the bottom layer is a metal layer, the graphene layers are elliptic, and long axes of every two adjacent graphene layers are perpendicular to each other. The graphene layer is used as a wave absorbing material, and the graphene layer is of an elliptical structure and can induce local surface plasmon resonance of incident terahertz waves. Through doping different carrier concentrations to four different graphite alkene layers to change the chemical potential of graphite alkene, and then can independently adjust 8 frequencies of inhaling the ripples frequency channel, perhaps the length adjustment of major-minor axis also can independently adjust 8 frequencies of inhaling the ripples frequency channel. The terahertz wave absorber has the advantages of eight-frequency-band absorption, high absorption rate, easiness in tuning, simple structure, easiness in integration and the like.
Description
Technical Field
The invention belongs to the technical field of terahertz, and particularly relates to a multi-band easily-tuned terahertz wave absorber based on graphene.
Background
The terahertz wave is an electromagnetic wave in a frequency spectrum range between microwave and infrared bands, has very unique properties, and mainly comprises (1) the terahertz wave has very low photon energy (1 THz-4 meV), has non-ionization property when interacting with substances, and cannot damage biological tissues. While the photon energy of x-rays is in the KeV range, genetic damage and skin cancer may be caused to biological tissues. (2) The terahertz wave has very strong penetrability, and has small absorption to most nonpolar substances and non-metallic materials (such as clothes, leather, paper and the like), and good penetrability. Therefore, the terahertz waves can detect the hidden object. (3) The terahertz wave has an obvious characteristic absorption peak. The vibration, translation and rotation energy levels of most biological tissues and organic molecules are in the terahertz waveband range. Therefore, the spectral information of the compounds can be obtained by the terahertz time-domain spectroscopy technology, and the substance structures and physical properties of the compounds can be analyzed and identified by the characteristic frequency. (4) The wavelength of the terahertz wave is shorter than that of the microwave, so that the terahertz wave has higher spatial resolution in the aspect of imaging.
Due to the special properties of terahertz waves, the terahertz waves have important applications in the fields of communication (broadband communication), radar, electronic countermeasure, electromagnetic weapons, astronomy, medical imaging (unmarked genetic examination, imaging at the cellular level), nondestructive testing, safety inspection (biochemical inspection), and the like. In recent years, terahertz wave generation source and terahertz wave detection are recognized as two key problems restricting the development of terahertz technology. The absorption and energy capture of the terahertz wave are the basis for realizing terahertz detection and are the core problems of terahertz wave calibration, regulation, conversion and application. At present, most of designs focus on absorption intensity modulation or single-double frequency band modulation, few researches are carried out to realize multi-band absorption, and the multi-band terahertz wave absorber also has the defects of complex structure, low absorption rate, difficulty in tuning, large structure size, difficulty in integration and the like.
Disclosure of Invention
The application provides a multifrequency section easily harmonious terahertz wave absorber based on graphite alkene, this terahertz wave absorber has advantages such as eight frequency bands absorb, high absorption rate, easily tune, simple structure and easily integration to solve the structure complicacy that prior art exists, the absorption rate is low and shortcoming such as difficult tune.
The invention provides a multi-band terahertz wave absorber easy to tune based on graphene, which comprises a wave absorber unit, wherein the wave absorber unit is provided with 9 layers of structures, graphene layers and Topas medium layers are arranged at intervals of 8 layers from top to bottom in sequence, the bottom layer is a metal layer, the graphene layers are elliptic, and long axes of every two adjacent graphene layers are perpendicular to each other. The terahertz wave absorber is simple in structure and easy to manufacture.
In a preferred embodiment, the wave absorber is composed of 30-100 wave absorber units. If the number of the wave absorber units is less than 30, the boundary effect exists, the difference exists between the absorption performance and simulation data, and if the number of the wave absorber units is more than 100, the volume of the wave absorber units is overlarge.
In a preferred embodiment, in each wave absorber unit, the graphene layers sequentially include, from top to bottom, a first graphene layer, a second graphene layer, a third graphene layer and a fourth graphene layer, a long axis of the first graphene layer ranges from 2.73 μm to 5.07 μm, a short axis ranges from 2.17 μm to 4.03 μm, a long axis of the second graphene layer ranges from 1.82 μm to 3.38 μm, a short axis ranges from 1.47 μm to 2.73 μm, a long axis of the third graphene layer ranges from 1.40 μm to 2.60 μm, a short axis ranges from 1.12 μm to 2.08 μm, a long axis of the fourth graphene layer ranges from 1.11 μm to 4.03 μm, and a short axis ranges from 0.90 μm to 1.66 μm. After optimization through simulation experiments, the lengths of the long axis and the short axis of the graphene layer are selected within the range so as to ensure that 8 obvious absorption frequency bands exist and the absorption effect is optimal.
In a preferred embodiment, in each wave absorber unit, the Topas dielectric layers sequentially comprise a first Topas dielectric layer, a second Topas dielectric layer, a third Topas dielectric layer and a fourth Topas dielectric layer from top to bottom, the thicknesses of the first Topas dielectric layer, the second Topas dielectric layer and the third Topas dielectric layer are 1.46-2.71 μm, and the thickness of the fourth Topas dielectric layer is 6.02-11.18 μm. After optimization of a simulation experiment, the selection of the thickness of the Topas dielectric layer in the range can ensure that 8 obvious absorption frequency bands exist, the absorption effect is optimal, and the upper graphene layer and the lower graphene layer are not interfered with each other.
In a preferred embodiment, the Topas dielectric layer is a cyclic olefin copolymer and is rectangular in shape, and the length and width of the Topas dielectric layer range from 2.81 μm to 5.23 μm. After optimization of simulation experiments, the length and the width of the Topas dielectric layer are selected within the range of 2.81-5.23 μm, so that 8 obvious absorption frequency bands can be ensured, and the absorption effect is optimal.
In a preferred embodiment, the metal layer is rectangular in shape, with a length and width in the range of 2.81 to 5.23 μm and a thickness in the range of 3.5 to 6.5 μm. Preferably, the metal layer material is gold.
In a preferred embodiment, the thickness of each graphene layer ranges from 0.35nm to 0.65nm, and each graphene layer is arranged in the center of the Topas dielectric layer.
In a preferred embodiment, the thickness of each wave absorber element is in the range of 13.90 μm to 25.81 μm. After simulation optimization, the wave absorber is selected in the range, 8 obvious absorption frequency bands can be ensured, and the absorption effect is optimal.
In a preferred embodiment, the frequencies of the 8 absorbing frequency bands can be independently adjusted by changing the length range of the long axis and the short axis of each graphene layer.
In a preferred embodiment, the doping concentration of intrinsic carriers of each graphene layer is different, and the doping concentration of intrinsic carriers of each graphene layer is 7.6 × 1010cm-2～8.4×1010cm-2. The chemical potential of undoped intrinsic carriers in the graphene layers is 0meV, each graphene layer is doped with the intrinsic carriers, so that the chemical potential of the first graphene layer is changed to be 180 meV-200 meV, the chemical potential of the second graphene layer is 110 meV-130 meV, the chemical potential of the third graphene layer is 70 meV-80 meV and the chemical potential of the fourth graphene layer is 40 meV-60 meV, and the resonant peak frequency is adjusted by changing the chemical potential of the graphene layers.
According to the multi-band terahertz wave absorber easy to tune based on graphene, 4 elliptical graphene layers with different sizes and 4 Topas medium layers are sequentially stacked at intervals, and the long axes of the adjacent graphene layers form an included angle of 90 degrees. By applying TM-polarized vertical incident waves to a port, the terahertz wave absorber generates absorption peaks of 8 frequency bands, and the length of a long axis and a short axis of each graphene layer can be changed, so that respective absorption frequency bands can be independently tuned, while a traditional multi-band wave absorber can only tune a plurality of absorption frequency bands together. The graphene material is a novel two-dimensional material, so that the chemical potential of graphene can be changed by changing the intrinsic carrier doping concentration of the graphene, and then 8 absorption frequency bands are tuned, and the absorption frequency bands can be tuned by changing the structure size of a traditional wave absorber. The terahertz wave absorber has the characteristic of independence on the angle of incident terahertz waves, namely, the terahertz wave absorber still has a good absorption effect on obliquely incident terahertz waves.
Drawings
The accompanying drawings are included to provide a further understanding of the embodiments and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments and together with the description serve to explain the principles of the invention. Other embodiments and many of the intended advantages of embodiments will be readily appreciated as they become better understood by reference to the following detailed description. The elements of the drawings are not necessarily to scale relative to each other. Like reference numerals designate corresponding similar parts.
Figure 1 is a schematic diagram of a single wave absorber cell according to one embodiment of the present invention;
figure 2 is a side view of a single wave absorber unit according to one embodiment of the invention;
figure 3 is a top view of an outer frame of a single wave absorber unit according to one embodiment of the invention;
fig. 4 is a graph of absorption curves for a short axis of a different fourth graphene layer simulated in accordance with an embodiment of the invention;
fig. 5 is a graph of absorbance curves for different fourth graphene layer long axes simulated in accordance with one embodiment of the invention;
figure 6 is an absorbance graph of different fourth graphene layer chemical potentials simulated according to one embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in further detail with reference to the accompanying drawings, and it is apparent that the described embodiments are only a part of the embodiments of the present invention, not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention will be described in detail with reference to the attached drawings 1 to 3, and the wave absorber of the multi-band easy-tuning terahertz wave absorber based on graphene is composed of wave absorber units, and the wave absorber is composed of 30-100 wave absorber units. The wave absorber unit is provided with 9 layers of structures, the graphene layer and the Topas medium layer are arranged at intervals of 8 layers from top to bottom, and the bottom layer is a metal layer. In each wave absorber unit, the wave absorber unit sequentially comprises a first graphene layer 6, a first Topas dielectric layer 1, a second graphene layer 7, a second Topas dielectric layer 2, a third graphene layer 8, a third Topas dielectric layer 3, a fourth graphene layer 9, a fourth Topas dielectric layer 4 and a metal layer 5 from top to bottom. The metal layer 5 is rectangular, and has a length and width in the range of 2.81 to 5.23um and a thickness in the range of 3.5 to 6.5 um. The thickness range of each wave absorber unit is 13.90-25.81 mu m.
In a specific embodiment, the long axis of the first graphene layer 6 ranges from 2.73 μm to 5.07 μm, the short axis ranges from 2.17 μm to 4.03 μm, the long axis of the second graphene layer 7 ranges from 1.82 μm to 3.38 μm, the short axis ranges from 1.47 μm to 2.73 μm, the long axis of the third graphene layer 8 ranges from 1.40 μm to 2.60 μm, the short axis ranges from 1.12 μm to 2.08 μm, the long axis of the fourth graphene layer 9 ranges from 1.11 μm to 4.03 μm, and the short axis ranges from 0.90 μm to 1.66 μm. The frequency of 8 wave-absorbing frequency bands can be independently adjusted by changing the length ranges of the long axis and the short axis of each graphene layer. The graphene layers are oval, long axes of every two adjacent graphene layers are perpendicular to each other, and 90-degree included angles are formed between every two adjacent graphene layers. The graphene layer is used as a wave absorbing material, and the graphene layer is of an elliptical structure and can induce local surface plasmon resonance of incident terahertz waves.
In a specific embodiment, the Topas dielectric layers are cyclic olefin copolymer and rectangular in shape, and the length and width of each Topas dielectric layer range from 2.81um to 5.23 um. The thicknesses of the first Topas dielectric layer 1, the second Topas dielectric layer 2 and the third Topas dielectric layer 3 are 1.46-2.71 microns, and the thickness of the fourth Topas dielectric layer 4 is 6.02-11.18 microns. The thickness range of each graphene layer is 0.35 nm-0.65 nm, and each graphene layer is arranged at the center of the Topas dielectric layer.
Example 1
The major axis and the minor axis of the first graphene layer 6 in the wave absorber unit are respectively 3.9 μm and 3.1 μm, the major axis and the minor axis of the second graphene layer 7 are respectively 2.6 μm and 2.1 μm, the major axis and the minor axis of the third graphene layer 8 are respectively 2.0 μm and 1.6 μm, and the major axis and the minor axis of the fourth graphene layer 9 are respectively 1.58 μm and 1.28 μm. The shape of each Topas dielectric layer and the metal layer in the wave absorber unit is rectangular, and the length and the width of the first Topas dielectric layer 1, the second Topas dielectric layer 2, the third Topas dielectric layer 3, the fourth Topas dielectric layer 4 and the metal layer 5 are all 4.02 mu m. The thicknesses of the first Topas dielectric layer 1, the second Topas dielectric layer 2 and the third Topas dielectric layer 3 are all 2.08 mu m. The thickness of the fourth Topas dielectric layer 4 is 8.6 μm. The thickness of the metal layer 5 can be 5 μm, the thickness of each graphene layer is 0.5nm, and the total thickness of the wave absorber unit is 19.84 μm. When terahertz waves are incident perpendicularly to the first graphene layer 6, absorption spectrum curves as shown in fig. 4 and 5 can be obtained through simulation calculation by changing the short axis length and the long axis length of the fourth graphene layer 9.
Fig. 4 is a simulated absorbance graph of the short axes of different fourth graphene layers, and it can be seen from fig. 4 that by changing the short axis dimension of the fourth graphene layer 9 (the short axes are 1.18 μm, 1.28 μm, and 1.38 μm, respectively), three different dimensions respectively correspond to three curves on the waveform, and the difference is that the rightmost absorption peak varies between 4.5-5.0THz, and the absorption band around 4.70THz can be tuned independently, showing very good tuning characteristics.
Fig. 5 is a simulated absorbance graph of the long axes of different fourth graphene layers, and it can be seen from fig. 5 that by changing the size of the long axis of the fourth graphene layer 9 (the long axes are 1.48 μm, 1.58 μm, and 1.68 μm respectively), three different sizes correspond to three curves on the waveform respectively, and the difference is that the second absorption peak on the right changes around 4THz, and the absorption band around 4.08THz can be tuned independently, showing very good tuning characteristics.
Similarly, it can be found that the major axis and minor axis tuning center frequencies of the first graphene layer 6 are 1.45THz and 1.72THz, respectively; the major and minor axis tuning center frequencies of the second graphene layer 7 are 2.01THz and 2.35THz, respectively; the major and minor axis tuning centre frequencies of the third graphene layer 8 are 2.86THz and 3.33THz respectively.
Fig. 6 is an absorbance graph of a simulated graphene layer chemical potential, and it can be seen from fig. 6 that two absorption bands can be tuned simultaneously by changing the chemical potential of graphene.
According to the multi-band terahertz wave absorber easy to tune based on graphene, 4 elliptical graphene layers with different sizes and 4 Topas medium layers are sequentially stacked at intervals, and the long axes of the adjacent graphene layers form an included angle of 90 degrees. The terahertz wave absorber has 8 resonance modes in function, can generate 8 absorption frequency bands, is easy to tune, and can independently tune respective absorption frequency bands by changing the lengths of a long axis and a short axis of each graphene layer, while a traditional multi-band wave absorber can only tune a plurality of absorption frequency bands together. The graphene material is a novel two-dimensional material, so that the chemical potential of graphene can be changed by changing the intrinsic carrier doping concentration of the graphene, and then 8 absorption frequency bands are tuned, and the absorption frequency bands can be tuned by changing the structure size of a traditional wave absorber. The terahertz wave absorber has the characteristic of independence on the angle of incident terahertz waves, namely, the terahertz wave absorber still has a good absorption effect on obliquely incident terahertz waves.
While the principles of the invention have been described in detail in connection with the preferred embodiments thereof, it will be understood by those skilled in the art that the foregoing embodiments are merely illustrative of exemplary implementations of the invention and are not limiting of the scope of the invention. The details of the embodiments are not to be interpreted as limiting the scope of the invention, and any obvious changes, such as equivalent alterations, simple substitutions and the like, based on the technical solution of the invention, can be interpreted without departing from the spirit and scope of the invention.
Claims (9)
1. A multi-band easily tunable terahertz wave absorber based on graphene is characterized in that the wave absorber is composed of a wave absorber unit, the wave absorber unit is provided with 9 layers of structures, graphene layers and Topas dielectric layers are arranged at intervals in 8 layers from top to bottom in sequence, the bottom layer is a metal layer, the graphene layers are oval, long axes of every two adjacent graphene layers are perpendicular to each other, the graphene layers sequentially comprise a first graphene layer, a second graphene layer, a third graphene layer and a fourth graphene layer from top to bottom, the long axis range of the first graphene layer is 2.73-5.07 mu m, the short axis range is 2.17-4.03 mu m, the long axis range of the second graphene layer is 1.82-3.38 mu m, the short axis range is 1.47-2.73 mu m, the long axis range of the third graphene layer is 1.40-2.60 mu m, and the short axis range is 1.12-2.08 mu m, the long axis range of the fourth graphene layer is 1.11-4.03 microns, and the short axis range is 0.90-1.66 microns.
2. The multi-band terahertz wave absorber based on graphene, which is easy to tune and comprises the graphene, is characterized in that the wave absorber comprises 30-100 wave absorber units.
3. The multi-band terahertz wave absorber based on graphene in claim 1 is characterized in that in each wave absorber unit, the Topas dielectric layers sequentially comprise a first Topas dielectric layer, a second Topas dielectric layer, a third Topas dielectric layer and a fourth Topas dielectric layer from top to bottom, the thicknesses of the first Topas dielectric layer, the second Topas dielectric layer and the third Topas dielectric layer are 1.46-2.71 μm, and the thickness of the fourth Topas dielectric layer is 6.02-11.18 μm.
4. The multi-band terahertz wave absorber based on graphene as claimed in any one of claims 1 to 3, wherein the Topas dielectric layer is a cyclic olefin copolymer and is rectangular in shape, and the length and width of the Topas dielectric layer range from 2.81um to 5.23 um.
5. The graphene-based multiband easy-tuning terahertz wave absorber according to any one of claims 1-3, wherein the metal layer is rectangular in shape, and has a length and width in a range of 2.81um to 5.23um and a thickness in a range of 3.5 μm to 6.5 μm.
6. The multi-band terahertz wave absorber based on graphene as claimed in any one of claims 1 to 3, wherein the thickness of each graphene layer ranges from 0.35nm to 0.65nm, and each graphene layer is arranged at the center of the Topas dielectric layer.
7. The graphene-based multiband easy-tuning terahertz wave absorber of any one of claims 1-3, wherein the thickness of each wave absorber unit is in a range of 13.90 μm to 25.81 μm.
8. The multi-band easy-tuning terahertz wave absorber based on graphene as claimed in any one of claims 1-3, wherein the frequency of 8 wave-absorbing frequency bands can be independently adjusted by changing the length range of the long axis and the short axis of each graphene layer.
9. The graphene-based multiband easy-tuning terahertz wave absorber according to any one of claims 1-3, wherein the doping concentration of intrinsic carriers of each graphene layer is different and is 7.6 x 1010cm-2～8.4×1010cm-2。
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