CN110010490A - 一种纵向互联的射频立方体结构的制作工艺 - Google Patents
一种纵向互联的射频立方体结构的制作工艺 Download PDFInfo
- Publication number
- CN110010490A CN110010490A CN201811593344.2A CN201811593344A CN110010490A CN 110010490 A CN110010490 A CN 110010490A CN 201811593344 A CN201811593344 A CN 201811593344A CN 110010490 A CN110010490 A CN 110010490A
- Authority
- CN
- China
- Prior art keywords
- radio frequency
- cube
- chip
- pinboard
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 238000001259 photo etching Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 229910052718 tin Inorganic materials 0.000 claims description 9
- 238000001312 dry etching Methods 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000004026 adhesive bonding Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 230000005496 eutectics Effects 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 238000000280 densification Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910052716 thallium Inorganic materials 0.000 claims description 3
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 24
- 235000012431 wafers Nutrition 0.000 description 12
- 238000010586 diagram Methods 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4817—Conductive parts for containers, e.g. caps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0231—Manufacturing methods of the redistribution layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13025—Disposition the bump connector being disposed on a via connection of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/82007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting a build-up interconnect during or after the bonding process
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811593344.2A CN110010490B (zh) | 2018-12-25 | 2018-12-25 | 一种纵向互联的射频立方体结构的制作工艺 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811593344.2A CN110010490B (zh) | 2018-12-25 | 2018-12-25 | 一种纵向互联的射频立方体结构的制作工艺 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110010490A true CN110010490A (zh) | 2019-07-12 |
CN110010490B CN110010490B (zh) | 2021-04-09 |
Family
ID=67165235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811593344.2A Active CN110010490B (zh) | 2018-12-25 | 2018-12-25 | 一种纵向互联的射频立方体结构的制作工艺 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110010490B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111293078A (zh) * | 2020-03-17 | 2020-06-16 | 浙江大学 | 一种转接板正反两面空腔嵌入芯片的方法 |
CN111968961A (zh) * | 2020-08-24 | 2020-11-20 | 浙江集迈科微电子有限公司 | 侧壁互联板及其制作工艺 |
CN111968921A (zh) * | 2020-08-24 | 2020-11-20 | 浙江集迈科微电子有限公司 | 一种具有液态散热功能的pcb组装方式 |
CN111968941A (zh) * | 2020-08-24 | 2020-11-20 | 浙江集迈科微电子有限公司 | 一种晶圆级贴片互联方式 |
CN112053959A (zh) * | 2020-03-02 | 2020-12-08 | 浙江集迈科微电子有限公司 | 一种多层堆叠射频光模块立方体结构的制作方法 |
CN113299626A (zh) * | 2021-06-29 | 2021-08-24 | 广东佛智芯微电子技术研究有限公司 | 一种多芯片封装用的导电组件及其制作方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW478022B (en) * | 1999-11-17 | 2002-03-01 | Sony Corp | Semiconductor apparatus and method of fabricating semiconductor apparatus |
US20040157410A1 (en) * | 2003-01-16 | 2004-08-12 | Seiko Epson Corporation | Semiconductor device, semiconductor module, electronic equipment, method for manufacturing semiconductor device, and method for manufacturing semiconductor module |
CN1893053A (zh) * | 2005-07-08 | 2007-01-10 | 三星电子株式会社 | 插件结构及其制造方法、晶片级堆叠结构和封装结构 |
CN106847712A (zh) * | 2016-12-28 | 2017-06-13 | 华进半导体封装先导技术研发中心有限公司 | 一种扇出型晶圆级封装结构及其制作方法 |
-
2018
- 2018-12-25 CN CN201811593344.2A patent/CN110010490B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW478022B (en) * | 1999-11-17 | 2002-03-01 | Sony Corp | Semiconductor apparatus and method of fabricating semiconductor apparatus |
US20040157410A1 (en) * | 2003-01-16 | 2004-08-12 | Seiko Epson Corporation | Semiconductor device, semiconductor module, electronic equipment, method for manufacturing semiconductor device, and method for manufacturing semiconductor module |
CN1893053A (zh) * | 2005-07-08 | 2007-01-10 | 三星电子株式会社 | 插件结构及其制造方法、晶片级堆叠结构和封装结构 |
CN106847712A (zh) * | 2016-12-28 | 2017-06-13 | 华进半导体封装先导技术研发中心有限公司 | 一种扇出型晶圆级封装结构及其制作方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112053959A (zh) * | 2020-03-02 | 2020-12-08 | 浙江集迈科微电子有限公司 | 一种多层堆叠射频光模块立方体结构的制作方法 |
CN111293078A (zh) * | 2020-03-17 | 2020-06-16 | 浙江大学 | 一种转接板正反两面空腔嵌入芯片的方法 |
CN111968961A (zh) * | 2020-08-24 | 2020-11-20 | 浙江集迈科微电子有限公司 | 侧壁互联板及其制作工艺 |
CN111968921A (zh) * | 2020-08-24 | 2020-11-20 | 浙江集迈科微电子有限公司 | 一种具有液态散热功能的pcb组装方式 |
CN111968941A (zh) * | 2020-08-24 | 2020-11-20 | 浙江集迈科微电子有限公司 | 一种晶圆级贴片互联方式 |
CN111968921B (zh) * | 2020-08-24 | 2022-04-15 | 浙江集迈科微电子有限公司 | 一种具有液态散热功能的pcb组装方式 |
CN111968941B (zh) * | 2020-08-24 | 2024-02-23 | 浙江集迈科微电子有限公司 | 一种晶圆级贴片互联方式 |
CN113299626A (zh) * | 2021-06-29 | 2021-08-24 | 广东佛智芯微电子技术研究有限公司 | 一种多芯片封装用的导电组件及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
CN110010490B (zh) | 2021-04-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110010490A (zh) | 一种纵向互联的射频立方体结构的制作工艺 | |
CN110010546B (zh) | 一种竖立放置射频模块的相变散热结构的制作工艺 | |
CN110010491B (zh) | 一种多层堆叠射频微***立方体结构的制作工艺 | |
US5380681A (en) | Three-dimensional multichip package and methods of fabricating | |
CN110010563B (zh) | 一种底部散热型射频芯片转接板封装工艺 | |
US9111925B2 (en) | Process for enhanced 3D integration and structures generated using the same | |
TW201205759A (en) | Microelectronic elements having metallic pads overlying vias | |
CN103296008A (zh) | Tsv或tgv转接板,3d封装及其制备方法 | |
CN103943614B (zh) | 集成无源器件扇出型晶圆级封装三维堆叠结构及制作方法 | |
CN107622957A (zh) | 双面SiP的三维封装结构的制造方法 | |
CN111653492B (zh) | 一种三维堆叠射频光模块制作方法 | |
CN110010500A (zh) | 一种高度集成的射频芯片***级封装工艺 | |
CN202905686U (zh) | 一种多芯片圆片级封装结构 | |
CN102751204B (zh) | 一种扇出型圆片级芯片封装方法 | |
CN110010498A (zh) | 一种侧面散热的密闭型***级封装工艺 | |
CN110010484A (zh) | 一种插孔式超深tsv互联的射频芯片***级封装工艺 | |
CN110010475B (zh) | 一种射频芯片***级封装的散热模块制作工艺 | |
CN110010487B (zh) | 一种立式焊接的射频芯片***级封装工艺 | |
CN110010494B (zh) | 一种侧壁带焊盘的***级封装互联结构制作方法 | |
CN110010593B (zh) | 一种三维堆叠***级封装工艺 | |
CN110010495A (zh) | 一种高密度侧壁互联方法 | |
CN113066781B (zh) | 转接板堆叠模组、三维模组和堆叠工艺 | |
CN111341678B (zh) | 一种不同厚度芯片嵌入的封装方法 | |
CN210224007U (zh) | 一种硅基扇出型晶圆级封装结构 | |
CN110010477B (zh) | 一种侧面散热型密闭射频芯片封装工艺 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Feng Guangjian Inventor before: Feng Guangjian Inventor before: Wang Zhiyu Inventor before: Zhang Bing Inventor before: Zhou Qi Inventor before: Zhang Xun Inventor before: Yu Faxin |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20200804 Address after: 313100 Workshop No. 8, North Park, Second Division of Changxing National University Science and Technology Park, Chenwang Road and Taihu Road Intersection, Changxing County Economic and Technological Development Zone, Huzhou City, Zhejiang Province Applicant after: ZHEJIANG JIMAIKE MICROELECTRONIC Co.,Ltd. Address before: 310030 6, B block 3, three Garden Road, three pier Town, Xihu District, Hangzhou, Zhejiang. Applicant before: HANGZHOU ZHENLEI MICROWAVE TECHNOLOGY Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant |