CN109690941A - 压电振子 - Google Patents
压电振子 Download PDFInfo
- Publication number
- CN109690941A CN109690941A CN201780052755.8A CN201780052755A CN109690941A CN 109690941 A CN109690941 A CN 109690941A CN 201780052755 A CN201780052755 A CN 201780052755A CN 109690941 A CN109690941 A CN 109690941A
- Authority
- CN
- China
- Prior art keywords
- electric conductivity
- holding member
- substrate
- filler
- interarea
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 95
- 239000000945 filler Substances 0.000 claims abstract description 31
- 239000004020 conductor Substances 0.000 claims abstract description 10
- 239000011810 insulating material Substances 0.000 claims abstract description 7
- 125000006850 spacer group Chemical group 0.000 claims description 32
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 239000004615 ingredient Substances 0.000 claims description 4
- 229920001296 polysiloxane Polymers 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 26
- 230000005284 excitation Effects 0.000 description 24
- 239000007767 bonding agent Substances 0.000 description 13
- 239000013078 crystal Substances 0.000 description 13
- 238000000605 extraction Methods 0.000 description 12
- 230000006866 deterioration Effects 0.000 description 9
- 239000010410 layer Substances 0.000 description 9
- 238000005520 cutting process Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 150000001875 compounds Chemical group 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
- H03H9/0509—Holders; Supports for bulk acoustic wave devices consisting of adhesive elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05171—Chromium [Cr] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13199—Material of the matrix
- H01L2224/1329—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13299—Base material
- H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13299—Base material
- H01L2224/1339—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
- H01L2224/13391—The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/141—Disposition
- H01L2224/1412—Layout
- H01L2224/1413—Square or rectangular array
- H01L2224/14134—Square or rectangular array covering only portions of the surface to be connected
- H01L2224/14135—Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
- H01L2224/29391—The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
压电振子(1)具备压电振动元件(100)、具有对置的第1和第2主面(302、304)的基板(300)、以及将压电振动元件(100)能够激励地保持在基板(300)的第1主面(302)上的导电性保持部件(340、342),导电性保持部件(340、342)包括:以导电性材料为主要成分的第1填料(420),和以绝缘性材料为主要成分,并且杨氏模量的值比该第1填料小的第2填料(410),在从基板的第1主面(302)的法线方向观察的俯视图中,在比导电性保持部件(340、342)的中央区域(Rin)靠导电性保持部件(340、342)的外周区域(Rout)的部位,第2填料(410)以密集状态配置。
Description
技术领域
本发明涉及压电振子,特别是涉及通过导电性保持部件将压电振动元件保持在基板上的压电振子。
背景技术
作为压电振子的一个方式,公知有在基板的主面通过悬臂支承载置压电振动元件的结构。在这样的结构中,例如,实现在压电振动元件形成的电极和在基板形成的电极间的电导通,并且使用以机械构造保持压电振动元件的粘接剂。例如,在专利文献1中,公开有在保持压电振动片的粘接剂中混入了包覆良导体的金属而成的球形间隔物的压电设备。
专利文献1:日本特开2014-150452号公报
压电振动元件具备圧电基板、和在圧电基板的两主面设置的激励电极。一般来说,压电振动元件随着从由激励电极夹持的激励部分向圧电基板的外缘靠近而振动逐渐衰减。此处,形成为在使压电振子小型化的情况下,对于压电振动元件与基板主面的粘接而言,不仅在压电振动元件的外缘附近(即,振动衰减的区域)附上粘接剂,在与压电振动元件的激励部分靠近的部分(即,振动未充分衰减的区域)也附上粘接剂。鉴于该点,在专利文献1中公开的压电设备中,存在因与靠近该压电振动元件的激励部分的部分接合的粘接剂而阻碍振动,从而压电振子的特性劣化的问题。
发明内容
本发明是鉴于这样的情况而完成的,其目的在于提供即便在使压电振子小型化的情况下也抑制振子特性的劣化的压电振子。
本发明的一方案所涉及的压电振子具备:压电振动元件;基板,其具有对置的第1和第2主面;以及导电性保持部件,其将压电振动元件保持在基板的第1主面上并使压电振动元件能够激励,导电性保持部件包括以导电性材料为主要成分的第1填料,和以绝缘性材料为主要成分并且杨氏模量的值比第1填料小的第2填料,在从基板的第1主面的法线方向观察的俯视图中,在比导电性保持部件的中央区域靠导电性保持部件的外周区域的部位,第2填料以密集状态配置。
根据上述结构,导电性保持部件中,靠外周区域的部位的杨氏模量的值比中央区域小。因此,形成为使导电性保持部件的外周区域(即,比较柔软的区域)与靠近压电振动元件的激励部分的部分(即,振动未充分衰减的区域)接合。因此,减少因导电性保持部件的接合而引起的对振动的影响,从而抑制压电振子的振子特性的劣化。
本发明的一方案所涉及的压电振子具备:压电振动元件;基板,其具有对置的第1和第2主面;以及导电性保持部件,其将压电振动元件能够激励地保持在基板的第1主面上,导电性保持部件包括以导电性材料为主要成分的第1填料、和以绝缘性材料为主要成分,并且杨氏模量的值比该第1填料小的第2填料,在从基板的第1主面的法线方向观察的俯视图中,在导电性保持部件的中央区域的第1填料的体积与第2填料的体积之比率H1比在导电性保持部件的外周区域的第1填料的体积与第2填料的体积之比率H2高。
根据上述结构,导电性保持部件中,靠外周区域的部位的杨氏模量的值比中央区域小。因此,形成为使导电性保持部件的外周区域(即,比较柔软的区域)与靠近压电振动元件的激励部分的部分(即,振动未充分衰减的区域)接合。因此,减少因导电性保持部件的接合而引起的对振动的影响。从而抑制压电振子的振子特性的劣化。
根据本发明,能够提供即便在使压电振子小型化的情况下,也抑制振子特性的劣化的压电振子。
附图说明
图1是本发明的一实施方式所涉及的压电振子的分解立体图。
图2是图1的II-II线的剖视图。
图3是示意性地表示导电性保持部件的顶视图的图。
图4是导电性保持部件的显微镜照片。
图5是本发明的一实施方式所涉及的压电振子的俯视图。
具体实施方式
以下对本发明的实施方式进行说明。在以下的附图的记载中,相同或类似的构成要素用相同或类似的附图标记来表示。附图为例示,各部分的尺寸、形状是示意性的,不应将本申请发明的技术范围限定于该实施方式进行理解。
边参照图1和图2,边对本发明的一实施方式所涉及的压电振子1进行说明。图1是本发明的一实施方式所涉及的压电振子的分解立体图,图2是图1的II-II线的剖视图。
如图1所示,本实施方式所涉及的压电振子1具备:压电振动元件100(Piezoelectric Resonator)、盖部件200、以及基板300。盖部件200和基板300是用于容纳压电振动元件100的保持器(壳体或封装体)的结构的一部分。
压电振动元件100包括圧电基板110、和分别设置于圧电基板110的正反面的激励电极(Excitation Electrodes)120、130(以下也称为“第1激励电极120”和“第2激励电极130”)。
圧电基板110由规定的压电材料形成,对其材料没有特别限定。在图1所示的例子中,圧电基板110由具有规定的晶体取向的水晶材料形成。圧电基板110例如是AT切割水晶片(Quartz Crystal Element)。在将作为人工水晶的结晶轴的X轴、Y轴以及Z轴中的Y轴和Z轴绕X轴在从Y轴到Z轴的方向上旋转35°15′±1′30″而得的轴分别设为Y′轴和Z′轴的情况下,AT切割水晶片为将与由X轴和Z′轴确定的面(以下称为“XZ′面”,对于由其他轴确定的面也一样)平行的面作为主面而切出的水晶片。在图1所示的例子中,作为AT切割水晶片的圧电基板110,具有沿X轴延伸的长边、沿Z′轴延伸的短边、以及沿Y′轴延伸的厚度方向的边,且在XZ′面呈大致矩形状。使用了AT切割水晶片的压电振动元件在较宽的温度范围具有较高的频率稳定性,另外,还具有优异的经时变化特性。另外,对于使用了AT切割水晶片的压电振动元件(即,水晶振动元件(Quartz Crystal Resonator))而言,作为主要振动而包括厚度剪切振动模式(Thickness Shear Mode)。以下,以AT切割的轴方向作为基准对压电振子1的各结构进行说明。
此外,圧电基板不限定于上述结构,例如,也可以适用具有沿Z′轴延伸的长边、和沿X轴延伸的短边的矩形状的AT切割水晶片。或者,若主要振动包括厚度剪切振动模式,则例如也可以是BT切割等AT切割以外的切割的水晶片。另外,圧电基板的材料不限定于水晶,例如,也可以使用PZT等压电陶瓷、氧化锌等其他的压电材料。另外,压电振动元件例如也可以是MEMS(Micro Electro Mechanical Systems),具体而言,也可以使用在硅酮基板形成了MEMS的Si-MEMS。并且,压电振动元件也可以是使用了AlN、LiTaO3、LiNbO3、PZT等规定的压电材料的压电MEMS。
第1激励电极120形成于圧电基板110的第1主面112,第2激励电极130形成于圧电基板110的第2主面114。第1激励电极120和第2激励电极130是一对电极,在俯视观察XZ′面的情况下,大致整体重合地配置。圧电基板110具有由第1激励电极120和第2激励电极130夹持的激励部分。
在圧电基板110上形成有:经由引出电极122而与第1激励电极120电连接的连接电极124、和经由引出电极132而与第2激励电极130电连接的连接电极134。具体而言,将引出电极122在第1主面112上从第1激励电极120朝向X轴负方向侧短边引出,并且穿过圧电基板110的Z′轴正方向侧的侧面,与在第2主面114上形成的连接电极124连接。另一方面,将引出电极132在第2主面114上从第2激励电极130朝向X轴负方向侧短边引出,与在第2主面114上形成的连接电极134连接。连接电极124、134沿X轴负方向侧短边配置,经由后述的导电性保持部件340、342实现与基板300电导通,并且被机械结构保持。此外,对连接电极124、134和引出电极122、132的配置方式、图案形状不进行限定,也可以考虑与其他部件的电连接而进行适当改变。
对于包含第1激励电极120和第2激励电极130的上述各电极而言,例如在圧电基板110的表面,为了提高接合力,形成有铬(Cr)层作为基底,并在铬层的表面形成有金(Au)层。此外,不限于该材料。
如图2所示,盖部件200具有与基板300的第1主面302对置并开口的凹部。盖部件200在开口的整周,设置有从凹部的底面竖立而形成的侧壁部202,侧壁部202具有与基板300的第1主面302对置的端面204。端面204经由接合材料250而与基板300的第1主面302接合。此外,盖部件200只要是在与基板300接合后能够在内部空间容纳压电振动元件100的形状即可,对其形状没有特别限定。对盖部件200的材质没有特别限定,但例如也可以由金属等导电性材料构成。由此,通过使盖部件200与接地电位电连接,使得能够附加屏蔽功能。在盖部件200由金属形成的情况下,例如,也可以由包含铁(Fe)和镍(Ni)的合金(例如42合金)形成。或者,也可以在盖部件200的表面进一步形成金(Au)层等表面层。通过在表面形成金层,使得能够实现盖部件200的抗氧化。或者,盖部件200也可以是绝缘性材料或导电性材料和绝缘性材料的复合构造。
回到图1,基板300保持压电振动元件100并使压电振动元件100能够激励。在图1所示的例子中,压电振动元件100经由导电性保持部件340、342而被保持在基板300的第1主面302上并能够激励。
基板300具有沿X轴延伸的长边、沿Z′轴延伸的短边、以及沿Y′轴延伸的厚度方向的边,并在XZ′面呈大致矩形状。基板300例如由单层的绝缘性陶瓷形成。作为另一实施方式,也可以是基板300通过层叠多个绝缘性陶瓷片并烧结而形成。优选基板300由耐热性材料构成。此外,如图1所示,也可以是基板300呈平板状,或者也可以是呈在与盖部件200对置的方向上开口的凹状。
在基板300,在第1主面302形成有:连接电极320和322、角电极324和326、以及引出电极320a和322a,在侧面形成有侧面电极330、332、334、336,在第2主面304形成有外部电极360、362、364、366。
在基板300的第1主面302上,连接电极320、322沿X轴负方向侧的短边形成,且与该短边隔开间隔。连接电极320经由导电性保持部件340而与压电振动元件100的连接电极124连接,连接电极322经由导电性保持部件342而与压电振动元件100的连接电极134连接。对连接电极320、322的材料没有特别限定,但例如通过钼(Mo)、镍(Ni)、以及金(Au)的层叠构成。此外,在后面对导电性保持部件340、342的结构的细节进行叙述。
将引出电极320a从连接电极320朝向设置于基板300的一个角部的侧面电极330引出。将引出电极322a从连接电极322朝向在基板300的处于侧面电极330的对角位置的角部设置的侧面电极332沿X轴方向引出。
在本实施方式中,在剩余的角部(配置有与连接电极320、322电连接的引出电极320a、322a的角部以外的角部)形成有角电极324、326。角电极324、326是未与第1激励电极120和第2激励电极130中的任一个电连接的电极。
在基板300的各角部附近的侧面分别形成有多个侧面电极330、332、334、336。另外,在基板300的第2主面304上的各角部附近分别形成有多个外部电极360、362、364、366。具体而言,在X轴负方向和Z′轴正方向侧的角部配置侧面电极330和外部电极360,在X轴正方向和Z′轴负方向侧的角部配置侧面电极332和外部电极362,在X轴正方向和Z′轴正方向侧的角部配置侧面电极334和外部电极364,在X轴负方向和Z′轴负方向侧的角部配置侧面电极336和外部电极366。
侧面电极330、332、334、336为电连接第1主面302和第2主面304的各电极而设置。在图1所示的例子中,基板300的角部形成其局部被切割成圆筒曲面状(也称为凹形结构形状)而形成的缺口侧面,在这样的缺口侧面形成有侧面电极330、332、334、336。此外,基板300的角部的形状不限于此,缺口的形状也可以是平面状,或者没有缺口,也可以是俯视观察四角为直角的矩形状。
外部电极360、362、364、366是用于与安装基板(未图示)电连接的电极。外部电极360、362、364、366分别与在对应的角部的侧面形成的侧面电极330、332、334、336电连接。由此,外部电极360、362、364、366能够经由侧面电极330、332、334、336而与基板300的第1主面302侧的电极电导通。
具体而言,在多个外部电极中,外部电极360经由侧面电极330、引出电极320a、连接电极320、以及导电性保持部件340而与第1激励电极120电连接,外部电极362经由侧面电极332、引出电极322a、连接电极322、以及导电性保持部件342而与第2激励电极130电连接。即,外部电极360、362是与第1激励电极120或第2激励电极130电连接的输入输出端子。
另外,剩余的外部电极364、366是没有与压电振动元件100的第1激励电极120或第2激励电极130进行电连接的伪电极。通过形成外部电极364、366,使得能够在所有的角部形成外部电极,因此将压电振子1与其他部件进行电连接的处理工序变得容易。此外,外部电极364、366也可以具有作为供给接地电位的接地用电极的功能。例如,在盖部件200由导电性材料组成的情况下,通过将盖部件200与作为接地用电极的外部电极364、366电连接,使得能够赋予盖部件200屏蔽功能。
此外,在基板300形成的连接电极、角电极、引出电极、侧面电极、以及外部电极的各结构不限于上述的例子,能够进行各式各样地变形来应用。例如,外部电极的个数不限于4个,例如也可以仅为在对角上配置的2个输入输出端子。另外,侧面电极不限于在角部配置的电极,也可以是在除了角部以外的基板300的任一侧面形成。这种情况下,也可以是,像已经说明的那样,形成将侧面的局部切割为圆筒曲面状的缺口侧面,在除了角部以外的该侧面形成侧面电极。并且,也可以是不形成角电极324和326、侧面电极334和336、以及外部电极364和366。另外,也可以是,在基板300形成从第1主面302向第2主面304贯穿的通孔,利用该通孔实现从在第1主面302形成的连接电极向第2主面304的电导通。
在盖部件200和基板300各自的整周设置有接合材料250,使盖部件20的侧壁部202的端面204和基板300的第1主面302接合。对接合材料250的材料不进行限定,但例如也可以构成为金(Au)-锡(Sn)共晶合金。通过使盖部件与基板的接合为金属接合,使得在盖部件由导电性材料构成的情况下,能够实现盖部件与基板之间的电导通。另外,能够提高密封性。
盖部件200和基板300两者经由接合材料250而接合,使得压电振动元件100被密封于由盖部件200的凹部和基板300包围的内部空间(空腔)。在这种情况下,优选内部空间的压力为比大气压力低压的真空状态,由此降低因第1激励电极120和第2激励电极130的氧化而引起的经时变化等。
根据上述的结构,在压电振子1中,经由基板300的外部电极360、362,在压电振动元件100的一对第1激励电极120和第2激励电极130之间施加交变电场。由此,通过包括厚度剪切振动模式在内的振动模式使圧电基板110进行振动,从而能够获得伴随着该振动而产生的共振特性。
接下来,边参照图2~图4,边以导电性保持部件342为例,对导电性保持部件的结构的细节进行说明。此外,对于导电性保持部件340,因与导电性保持部件342相同而省略详细说明。图3是示意性地表示导电性保持部件的顶视图的图,图4是导电性保持部件的显微镜照片。具体而言,图3示意性地表示从基板300的第1主面302的法线方向(Y′轴方向)俯视观察(即,XZ′面的俯视)设置于连接电极322的导电性保持部件342的顶视图。此外,在图3中为便于说明,连接电极322表现为矩形状,但连接电极的形状不限于此。
导电性保持部件342例如是粘接剂热固化而形成的部件。导电性保持部件342能够激励地保持压电振动元件100,并且使在压电振动元件100形成的连接电极134和在基板300形成的连接电极322电导通。如图3所示,导电性保持部件342例如在XZ′面的俯视图中为圆形状。例如,圆形状包括圆形和椭圆形。或者,导电性保持部件342在XZ′面的俯视图中也可以是矩形状等其他的形状。如图2和图3所示,导电性保持部件342包括:粘接剂(粘合剂)400、以及混入于该粘接剂400的多个球形间隔物410(第2填料)和多个金属粒子420(第1填料)。此外,粘接剂400例如以树脂为主要成分。
多个球形间隔物410各自例如是以具有弹性的橡胶或者硅酮系的树脂等的塑料等树脂为主要成分的球形状。例如,球形状包括球体及椭圆体等。在本实施方式中,球形间隔物410没有被金属包覆,而是树脂材料暴露在表面。与由金属包覆的球形间隔物相比,这样的球形间隔物的杨氏模量的值较小,且声阻抗较低。另外,球形间隔物410与金属粒子420相比杨氏模量的值较小,且声阻抗较低。
多个金属粒子420的每一个是由多个金属原子结合而成的粒子。对多个金属粒子420的材料没有特别限定,但例如是银(Ag)等。多个金属粒子420在粘接剂400的内部边相互接触边进行固化,由此形成为保持部件具备导电性。此外,金属粒子420的粒子直径例如比由球形间隔物410形成的间隙小,使得多个金属粒子420各自进入由配置于连接电极322上的多个球形间隔物410形成的间隙。
在图2所示的例子中,多个球形间隔物410例如在连接电极322的表面上在高度方向(Y′轴方向)上堆叠两层。由此,形成为压电振动元件100被保持为,与基板300的第1主面302隔开规定的间隔、即隔开相当于球形间隔物410的外形尺寸(例如,6μm左右)的两层大小的间隔(例如,10μm左右)。因此,使压电振动元件100的第2主面114与基板300的第1主面302的距离保持恒定,从而能够使产生于在该两主面形成的电极间的寄生电容的大小保持恒定。此外,堆叠的球形间隔物的层数不限于此,也可以是一层,也可以是三层。
压电振动元件100通常随着从激励部分向圧电基板110的外缘靠近而振动逐渐衰减。因此,假设在导电性保持部件为均匀硬度的情况下,随着压电振子的小型化,使导电性保持部件与靠近压电振动元件的激励部分的部分接合,具体而言,与在振动未充分衰减的区域接合,从而能够通过该导电性保持部件阻碍振动。具体而言,例如,振动能够从压电振动元件100由经由导电性保持部件向基板300泄露。
因此,在本实施方式中,如图3所示,在从基板300的第1主面302的法线方向(Y′轴方向)的俯视中,球形间隔物410在比导电性保持部件342的中央区域Rin靠外周区域Rout的部位,以密集状态配置。另一方面,金属粒子420在比导电性保持部件34的外周区域Rout靠中央区域Rin的部位,以密集状态配置。另外,在本实施方式中,在导电性保持部件342的中央区域Rin的金属粒子420的体积与球形间隔物410的体积之比率H1比在导电性保持部件342的外周区域Rout的金属粒子420的体积与球形间隔物410的体积之比率H2高。另外,如上所述,球形间隔物410比金属粒子420柔软。由此,导电性保持部件342在中央区域Rin较硬的金属粒子420呈密集状态,在外周区域Rout柔软的球形间隔物410呈密集状态,因此与中央区域Rin相比,外周区域Rout变得柔软。
图4是从接合了压电振动元件100的导电性保持部件342中去除压电振动元件100后,从基板300的第1主面302的法线方向(Y′轴方向)观察的显微镜照片。此外,在图4中,球形间隔物410用白色的圆来表示,使得球形间隔物410变得清晰。另外,连接电极322具有圆形状。
如图4所示,可知球形间隔物410与在导电性保持部件342的中央区域相比在外周区域呈密集状态。尤其是,在导电性保持部件342的外缘,使球形间隔物410相互邻接而进行配置,以便包围中央区域。
根据上述的结构,在本实施方式中,形成为,使导电性保持部件340、342中比较柔软的外周区域Rout与靠近压电振动元件100的激励部分的部分接合,具体而言与振动未充分衰减的区域接合,使导电性保持部件340、342中比较硬的中央区域Rin与压电振动元件100的外缘附近接合,具体而言与振动衰减的区域接合(参照图2)。由此,与杨氏模量的值均匀的粘接剂相比,导电性保持部件340、342的接合对振子特性的影响变小。
即,导电性保持部件340、342的外周区域Rout比较柔软,且声阻抗低。因此,在压电振动元件100的振动未充分衰减的区域,使声阻抗比较低的导电性保持部件340、342与声阻抗比较高的压电振动元件100以及基板300接合,因此能够使声阻抗的差异变大。由此,与使用均匀硬度的粘接剂的情况相比,在压电振动元件100和导电性保持部件340、342的边界面的反射波增加,透射波减少,因此从压电振动元件100经由导电性保持部件340、342向基板300泄露的振动减少。因此,能够减轻由导电性保持部件的接合引起的振动的阻碍,从而降低与振动能量的损失成分相当的等效串联电阻(ESR:Equivalent Series Resistance)。由此抑制压电振子的特性的劣化。
另外,能够使导电性保持部件340、342也与靠近压电振动元件100的激励部分的部分接合,因此导电性保持部件340、342与压电振动元件100的接合面积增大。因此,即使压电振子小型化,也能够抑制压电振子的特性的劣化,并提高接合强度。
另外,在导电性保持部件340、342的中央区域Rin的金属粒子420的体积与球形间隔物410的体积之比率H1比在导电性保持部件340、342的外周区域Rout的金属粒子420的体积与球形间隔物410的体积之比率H2高。另外,金属粒子420以导电性材料为主要成分,球形间隔物410以绝缘性材料为主要成分。因此,该中央区域Rin的每单位面积的导电性提高,导电性保持部件340、342的导电性的可靠性提高。
另外,在本实施方式中,无需由金属包覆球形间隔物,因此与由金属包覆球形间隔物的结构相比制造成本低廉。
此外,在图1所示的例子中,压电振动元件100的一端通过导电性保持部件340、342而固定,其另一端为自由状态,但也可以是压电振动元件100在其两端固定于基板300。即,也可以是,在X轴正方向侧形成有连接电极320、322中一者而在X轴负方向侧形成有连接电极320、322中另一方等,在基板300的第1主面302上彼此不同的侧来配置。
另外,对于球形间隔物410和金属粒子420的配置,不限于上述的结构。例如,也可以是,金属粒子在导电性保持部件内均匀配置,球形间隔物在导电性保持部件的外周区域比中央区域密集地配置。
图5是本发明的一实施方式所涉及的压电振子的俯视图。图5是省略了图1所示的压电振子1的盖部件200和接合材料250的图。
如图5所示,在本实施方式中,在从基板300的第1主面302的法线方向(Y′轴方向)观察的俯视图中,在比压电振动元件100的外缘靠外侧的位置配置有导电性保持部件340、342的外周区域Rout的局部。由此,形成为在导电性保持部件340、342,使杨氏模量的值比较大的中央区域Rin与压电振动元件100外缘附近结合。其中,该压电振动元件100的外缘附近振动充分衰减,因此因导电性保持部件340、342的接合而引起的对压电振动元件100的振动的影响较少。因此,抑制压电振子的振子特性的劣化。
以上对本发明的示例性的实施方式进行了说明。在压电振子1中,导电性保持部件340、342包括多个金属粒子420、和与该多个金属粒子相比杨氏模量的值较小的多个球形间隔物410,在XZ′面的俯视图中,在比导电性保持部件340、342的中央区域Rin靠外周区域Rout的部位,球形间隔物410以密集状态配置。由此,形成为使比导电性保持部件340、342中的中央区域Rin柔软的外周区域Rout与靠近压电振动元件100的激励部分的部分(即,振动未充分衰减的区域)接合。因此,从压电振动元件100经由导电性保持部件340、342向基板300泄露的振动减少,从而抑制压电振子1的振子特性的劣化。另外,导电性保持部件340、342和压电振动元件100的接合面积增大,因此接合强度提高。
另外,在导电性保持部件340、342的XZ′面的俯视观察时,在比导电性保持部件340、342的外周区域Rout靠中央区域Rin的部位,压电振子1的金属粒子420以密集状态配置。由此,导电性保持部件340、342的中央区域Rin的每单位面积的导电性提高,从而导电性的可靠性提高。
另外,在压电振子1中,在导电性保持部件340、342的中央区域Rin的金属粒子420的体积与球形间隔物410的体积之比率H1比在外周区域Rout的金属粒子420的体积与球形间隔物410的体积之比率H2高。由此,形成为使导电性保持部件340、342中的比中央区域Rin柔软的外周区域Rout与靠近压电振动元件100的激励部分的部分(即,振动未充分衰减的区域)接合。因此,从压电振动元件100经由导电性保持部件340、342向基板300泄露的振动减少,从而抑制压电振子1的振子特性的劣化。另外,导电性保持部件340、342和压电振动元件100的接合面积增大,因此接合强度提高。另外,导电性保持部件340、342的中央区域Rin的每单位面积的导电性提高,从而导电性的可靠性提高。
另外,在压电振子1中,在XZ′面的俯视观察时,在比压电振动元件100的外缘靠外侧的位置配置有导电性保持部件340、342的外周区域Rout的局部。由此,形成为在导电性保持部件340、342使杨氏模量的值比较大的中央区域Rin与振动充分衰减的压电振动元件100的外缘附近结合。因此,因导电性保持部件340、342的接合而引起的对压电振动元件100的振动的影响减少,从而抑制压电振子1的振子特性劣化。
另外,在压电振子1中,通过球形间隔物410的混入,形成为压电振动元件100被保持为与基板300的第1主面302隔开规定的间隔。因此,能够将产生于在压电振动元件100的第2主面114和基板300的第1主面302形成的电极间的寄生电容的大小保持恒定。
另外,对金属粒子420的材料没有特别限定,但例如也可以以银为主要成分。
另外,对球形间隔物410的材料没有特别限定,但例如也可以以硅酮系树脂为主要成分。
此外,以上说明的各实施方式是为容易理解本发明而形成的,并不是为限定本发明而解释的。本发明在不脱离其主旨的情况下,能够变更/改进,并且本发明也包含其等价物。即,只要具备本发明的特征,本领域技术人员对各实施方式施加了适当的设计变更而得的方式也包含在本发明的范围内。例如,各实施方式所具备的各要素以及其配置、材料、条件、形状、尺寸等不限于例示的内容,能够进行适当地变更。另外,各实施方式所具备的各要素能够在技术上尽可能地进行组合,组合这些而得的方式只要包含本发明的特征,则也包含于本发明的范围内。
附图标记的说明
1…压电振子;100…压电振动元件;110…圧电基板;120、130…激励电极;122、132…引出电极;124、134…连接电极;200…盖部件;250…接合材料;300…基板;320、322…连接电极;320a、322a…引出电极;324、326…角电极;330、332、334、336…侧面电极;340、342…导电性保持部件;360、362、364、366…外部电极;400…粘接剂;410…球形间隔物;420…金属粒子;Rin…中央区域;Rout…外周区域。
Claims (8)
1.一种压电振子,其中,具备:
压电振动元件;
基板,其具有对置的第1和第2主面;以及
导电性保持部件,其将所述压电振动元件能够激励地保持在所述基板的所述第1主面上,
所述导电性保持部件包括:以导电性材料为主要成分的第1填料,和以绝缘性材料为主要成分并且杨氏模量的值比所述第1填料小的第2填料,
在从所述基板的所述第1主面的法线方向观察的俯视图中,在比所述导电性保持部件的中央区域靠所述导电性保持部件的外周区域的部位,所述第2填料以密集状态配置。
2.根据权利要求1所述的压电振子,其中,
在从所述基板的所述第1主面的法线方向观察的俯视图中,在比所述导电性保持部件的外周区域靠所述导电性保持部件的中央区域的部位,所述第1填料以密集状态配置。
3.一种压电振子,其中,具备:
压电振动元件;
基板,其具有对置的第1和第2主面;以及
导电性保持部件,其将所述压电振动元件能够激励地保持在所述基板的所述第1主面上,
所述导电性保持部件包括:以导电性材料为主要成分的第1填料、和以绝缘性材料为主要成分,并且杨氏模量的值比所述第1填料小的第2填料,
在从所述基板的所述第1主面的法线方向观察的俯视图中,在所述导电性保持部件的中央区域的所述第1填料的体积与所述第2填料的体积之比率H1比在所述导电性保持部件的外周区域的所述第1填料的体积与所述第2填料的体积之比率H2高。
4.根据权利要求1~3中任一项所述的压电振子,其中,
在从所述基板的所述第1主面的法线方向观察的俯视图中,所述外周区域的局部配置于比所述压电振动元件的外缘靠外侧的位置。
5.根据权利要求1~4中任一项所述的压电振子,其中,
所述第2填料为将所述压电振动元件保持为与所述基板的所述第1主面隔开规定的间隔的球形间隔物。
6.根据权利要求1~5中任一项所述的压电振子,其中,
所述第1填料以银为主要成分。
7.根据权利要求1~6中任一项所述的压电振子,其中,
所述第2填料以硅酮系树脂为主要成分。
8.根据权利要求1~7中任一项所述的压电振子,其中,
还具备盖部件,所述盖部件与所述基板接合,在由自身和所述基板形成的内部空间容纳所述压电振动元件。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016169722 | 2016-08-31 | ||
JP2016-169722 | 2016-08-31 | ||
PCT/JP2017/028960 WO2018043084A1 (ja) | 2016-08-31 | 2017-08-09 | 圧電振動子 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109690941A true CN109690941A (zh) | 2019-04-26 |
CN109690941B CN109690941B (zh) | 2023-02-28 |
Family
ID=61301548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201780052755.8A Active CN109690941B (zh) | 2016-08-31 | 2017-08-09 | 压电振子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11233497B2 (zh) |
JP (1) | JP6956093B2 (zh) |
CN (1) | CN109690941B (zh) |
WO (1) | WO2018043084A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019033379A (ja) * | 2017-08-08 | 2019-02-28 | 日本電波工業株式会社 | 水晶デバイス |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009152717A (ja) * | 2007-12-19 | 2009-07-09 | Epson Toyocom Corp | 圧電素子 |
WO2011125414A1 (ja) * | 2010-04-01 | 2011-10-13 | 株式会社村田製作所 | 電子部品及びその製造方法 |
CN103326688A (zh) * | 2012-03-21 | 2013-09-25 | 精工爱普生株式会社 | 振动元件、振子、电子器件以及电子设备 |
JP5918454B1 (ja) * | 2014-05-17 | 2016-05-18 | 京セラ株式会社 | 圧電部品 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002280716A (ja) * | 2001-03-19 | 2002-09-27 | Pioneer Electronic Corp | 電子部品の取付方法及び接着体 |
JP2014150452A (ja) | 2013-02-01 | 2014-08-21 | Asahi Kasei Electronics Co Ltd | 圧電デバイス |
EP3379723A4 (en) * | 2015-12-24 | 2019-08-07 | Murata Manufacturing Co., Ltd. | PIEZOELECTRIC OSCILLATION DEVICE AND METHOD FOR MANUFACTURING THE SAME |
JP6772574B2 (ja) * | 2016-06-16 | 2020-10-21 | 株式会社村田製作所 | 圧電振動子及びその製造方法 |
WO2018043340A1 (ja) * | 2016-08-31 | 2018-03-08 | 株式会社村田製作所 | 圧電振動子 |
WO2019167920A1 (ja) * | 2018-02-28 | 2019-09-06 | 株式会社村田製作所 | 振動基板、振動素子、及び振動子 |
-
2017
- 2017-08-09 CN CN201780052755.8A patent/CN109690941B/zh active Active
- 2017-08-09 WO PCT/JP2017/028960 patent/WO2018043084A1/ja active Application Filing
- 2017-08-09 JP JP2018537091A patent/JP6956093B2/ja active Active
-
2019
- 2019-02-22 US US16/283,011 patent/US11233497B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009152717A (ja) * | 2007-12-19 | 2009-07-09 | Epson Toyocom Corp | 圧電素子 |
WO2011125414A1 (ja) * | 2010-04-01 | 2011-10-13 | 株式会社村田製作所 | 電子部品及びその製造方法 |
CN103326688A (zh) * | 2012-03-21 | 2013-09-25 | 精工爱普生株式会社 | 振动元件、振子、电子器件以及电子设备 |
JP5918454B1 (ja) * | 2014-05-17 | 2016-05-18 | 京セラ株式会社 | 圧電部品 |
Also Published As
Publication number | Publication date |
---|---|
US20190190485A1 (en) | 2019-06-20 |
JPWO2018043084A1 (ja) | 2019-03-28 |
JP6956093B2 (ja) | 2021-10-27 |
WO2018043084A1 (ja) | 2018-03-08 |
CN109690941B (zh) | 2023-02-28 |
US11233497B2 (en) | 2022-01-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8736152B2 (en) | Piezoelectric vibrating pieces and associated devices exhibiting enhanced electrical field | |
US20120242193A1 (en) | Quartz-crystal devices exhibiting reduced crystal impedance | |
JP2001238291A (ja) | 圧電音響部品およびその製造方法 | |
US20130214648A1 (en) | Piezoelectric vibration element and piezoelectric device | |
CN105721995A (zh) | 压电式发声体以及电音响转换装置 | |
US10476475B2 (en) | Piezoelectric resonator unit and manufacturing method for the same | |
JP5804825B2 (ja) | 水晶振動素子及び水晶デバイス | |
CN109217838A (zh) | 振动片、振子、电子器件、电子设备以及移动体 | |
US11832055B2 (en) | Piezoelectric sound-producing component | |
CN109690941A (zh) | 压电振子 | |
US20060012269A1 (en) | Quartz crystal unit and holding structure for same | |
JP5144731B2 (ja) | 圧電振動子 | |
CN112640302B (zh) | 谐振子和具备谐振子的谐振装置 | |
WO2018043340A1 (ja) | 圧電振動子 | |
JP5434712B2 (ja) | 圧電振動片および圧電デバイス | |
JP2010103805A (ja) | 屈曲振動片、屈曲振動子、および圧電デバイス | |
JP2009207066A (ja) | 圧電デバイス | |
JP2007324957A (ja) | 圧電振動子 | |
US20220141594A1 (en) | Piezoelectric vibration plate and piezoelectric sound generating component | |
JP5832132B2 (ja) | 圧電デバイス | |
JP6086950B2 (ja) | 水晶振動素子及び水晶デバイス | |
JP2020150554A (ja) | 圧電振動子及びその製造方法 | |
JP2023079859A (ja) | 水晶振動素子および水晶振動デバイス | |
JP2000114911A (ja) | 圧電デバイス | |
JP4833716B2 (ja) | 圧電発振器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |