CN109440074B - 一种高能量输出的氢爆膜桥及其制备方法 - Google Patents
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Abstract
本发明提供了一种高能量输出的氢爆膜桥及其制备方法,属于火工品技术领域。所述氢爆膜桥自下而上依次为基片、桥区薄膜层和保护层,所述桥区薄膜层为储氢薄膜。本发明选择储氢薄膜作为冲击片***的膜桥材料,该储氢薄膜在电能、脉冲激光能量等外界能量作用下发生等离子***,同时由于膜桥中含有大量氢,储氢薄膜自身也会发生氢爆;因此,该储氢薄膜在电能、脉冲激光能量等外界能量的作用下会同时发生等离子***和氢爆,极大地提高了该过程的单位能量输出和能量转换效率,提升了***箔的可靠性和稳定性,并有效降低了起爆能量和起爆电压。
Description
技术领域
本发明属于火工品技术领域,涉及一种冲击片***用***箔,具体涉及一种高能量输出的氢爆膜桥及其制备方法。
背景技术
冲击片***作为各类点火起爆装置中的关键换能元件,被广泛应用于航空、航天、导弹发射、矿山***等军用和民用领域。传统的冲击片***主要包括***箔、飞片、加速膛以及***柱等,如图1所示。其中,***箔在***过程中起着将激励能量(电能、脉冲激光、冲击波等)转换为飞片动能的作用,是冲击片***的关键元件,其工作原理是***箔材料在激励能量作用下发生相变,由固态转变为等离子态,相变生成的等离子体剪切并加速飞片材料,使得飞片以极高的速度撞击火药,实现冲击片***的点火起爆功能。
目前,***箔通常采用金属Cu作为桥区薄膜材料,该材料易在高电场作用下发生电爆产生等离子体,但单一的铜***桥存在能量转换率较低、能量输出不高等问题。为此,国内外研究人员尝试在Cu***箔上集成含能反应多层薄膜,如Al/Ni、Al/CuO、B/Ti等,利用含能薄膜反应过程中释放的化学能量,实现电能和化学能相结合提高***桥的能量密度,增强***箔的能量输出。但是,该方法往往存在起爆能量较高、含能薄膜的反应速率与***箔的离子化过程不匹配等问题,导致***桥的能量转换效率提高能力有限。因此,设计制备新型的膜桥材料和结构,提高冲击片***的能量转换效率,是冲击片***永恒不变的主题。
发明内容
本发明针对背景技术存在的缺陷,提出了一种高能量输出的氢爆膜桥(***箔)及其制备方法。本发明选择储氢薄膜作为冲击片***的膜桥材料,该储氢薄膜在电能、脉冲激光能量等外界能量作用下发生等离子***,同时由于膜桥中含有大量氢,储氢薄膜自身也会发生氢爆;因此,该储氢薄膜在电能、脉冲激光能量等外界能量的作用下会同时发生等离子***和氢爆,极大地提高了该过程的单位能量输出和能量转换效率。
本发明的技术方案如下:
一种高能量输出的氢爆膜桥,其特征在于,所述氢爆膜桥自下而上依次为基片、桥区薄膜层和保护层,所述桥区薄膜层为储氢薄膜。
进一步地,所述储氢薄膜为Ti系合金薄膜(Ti/Mo、Ti/Fe、Ti/Ni等),Mg系合金薄膜(Mg/Al、Mg/Ni、Mg/Pd等),或者Zr系合金薄膜(Zr/Co、Zr等)等储氢合金薄膜。
进一步地,所述基片为陶瓷基底、硅基底或者玻璃基底等;所述保护层材料为Ta、Mo或Cr等金属材料。
进一步地,所述储氢薄膜的厚度为0.1~5μm,所述保护层的厚度为0.01~5μm。
一种高能量输出的氢爆膜桥的制备方法,包括以下步骤:
步骤1、采用磁控溅射法在基片上形成储氢薄膜;
步骤2、采用磁控溅射法在步骤1得到的储氢薄膜上形成保护层;
步骤3、将步骤2得到的带储氢薄膜和保护层的基片放置于气体吸附仪中,抽真空至5×10-4Pa以下,然后加热基片至20~1000℃;再向吸附仪中通入氢气,直至气体气压达到0.5KPa~5MPa,在温度为20~1000℃、氢气气压为0.5KPa~5MPa的条件下,保持0.5~100h,以使储氢薄膜吸收氢气;完成所述氢爆膜桥的制备。
进一步地,步骤3所述氢气的纯度以体积百分比计不低于99.99%。
本发明还提供了一种高能量输出的氢爆膜桥的制备方法,选取MgAl合金薄膜作为储氢薄膜材料、Ta作为保护层材料防止Mg氧化,具体包括以下步骤:
步骤1、清洗基片:将基片依次在丙酮、乙醇和去离子水中超声清洗,烘干,待用;
步骤2、采用磁控溅射法在步骤1清洗干净的基片上沉积MgAl薄膜作为储氢薄膜;其中,溅射气压为0.3~0.6Pa,溅射功率为40~200W,溅射气体为氩气等惰性气体,溅射时间为40~120min,得到的MgAl薄膜的厚度为0.1~5μm;
步骤3、采用磁控溅射法在步骤2得到的储氢薄膜上沉积一层Ta薄膜,作为保护层;其中,溅射气压为0.3~0.6Pa,溅射功率为40~200W,溅射气体为氩气等惰性气体,溅射时间为40~120min,得到的Ta薄膜的厚度为0.01~5μm;
步骤4、将步骤3得到的带储氢薄膜和保护层的基片取出,依次在丙酮和去离子水中清洗,烘干;
步骤5、储氢薄膜的加氢反应:将步骤4烘干后的样品放置于气体吸附仪中,抽真空至5×10-4Pa以下,然后加热基片至20~1000℃;再向吸附仪中通入氢气,直至气体气压达到0.5KPa~5MPa,在温度为20~1000℃、氢气气压为0.5KPa~5MPa的条件下,保持0.5~100h,以使储氢薄膜吸收氢气;完成所述氢爆膜桥的制备。
进一步地,步骤5所述氢气的纯度以体积百分比计不低于99.99%。
与现有技术相比,本发明的有益效果为:
本发明提供了一种高能量输出的氢爆膜桥及其制备方法,选择储氢薄膜作为冲击片***的膜桥材料,该储氢薄膜在电能、脉冲激光能量等外界能量作用下发生等离子***,同时由于膜桥中含有大量氢,储氢薄膜自身也会发生氢爆;因此,该储氢薄膜在电能、脉冲激光能量等外界能量的作用下会同时发生等离子***和氢爆,极大地提高了该过程的单位能量输出和能量转换效率,提升了***箔的可靠性和稳定性,并有效降低了起爆能量和起爆电压。
附图说明
图1为传统的冲击片***的结构示意图;
图2为本发明提供的氢爆膜桥的结构示意图;其中,1为基片,2为储氢薄膜层,3为保护层。
具体实施方式
下面结合附图和实施例,详述本发明的技术方案。
一种高能量输出的氢爆膜桥,其特征在于,所述氢爆膜桥自下而上依次为基片、桥区薄膜层和保护层,所述桥区薄膜层为储氢薄膜;所述储氢薄膜为Ti系合金薄膜(Ti/Mo、Ti/Fe、Ti/Ni等),Mg系合金薄膜(Mg/Al、Mg/Ni、Mg/Pd等),或者Zr系合金薄膜(Zr/Co、Zr等)等储氢合金薄膜。
本发明还提供了一种高能量输出的氢爆膜桥的制备方法,选取MgAl合金薄膜作为储氢薄膜材料、Ta作为保护层材料防止Mg氧化,具体包括以下步骤:
步骤1、清洗基片:选取3英寸的Al2O3陶瓷基片作为基片,依次在丙酮、乙醇和去离子水中超声清洗15min,烘干,待用;
步骤2、采用光刻技术在步骤1清洗干净的基片上形成光刻胶掩膜,然后采用磁控溅射法沉积MgAl薄膜作为储氢薄膜;其中,溅射气压为0.3~0.6Pa,溅射功率为40~200W,溅射气体为氩气,溅射时间为40~120min,得到的MgAl薄膜的厚度为0.1~5μm;
步骤3、采用磁控溅射法在步骤2得到的储氢薄膜上沉积一层Ta薄膜,作为保护层;其中,溅射气压为0.3~0.6Pa,溅射功率为40~200W,溅射气体为氩气,溅射时间为40~120min,得到的Ta薄膜的厚度为0.01~5μm;
步骤4、将步骤3得到的带储氢薄膜和保护层的基片取出,在丙酮中浸泡以除去基片上的光刻胶和粘附于光刻胶上的薄膜,再采用去离子水冲洗干净,烘干;
步骤5、储氢薄膜的加氢反应:将步骤4烘干后的样品放置于气体吸附仪中,抽真空至5×10-4Pa以下,然后加热基片至20~1000℃;再向吸附仪中通入氢气,直至气体气压达到0.5KPa~5MPa,在温度为20~1000℃、氢气气压为0.5KPa~5MPa的条件下,保持0.5~100h,以使储氢薄膜吸收氢气;完成所述氢爆膜桥的制备。
进一步地,步骤2和步骤3中的氩气的纯度以体积百分比计不低于99.99%。
实施例1
本实施例提供了一种高能量输出的氢爆膜桥的制备方法,选取MgAl合金薄膜作为储氢薄膜材料、Ta作为保护层材料防止Mg氧化,具体包括以下步骤:
步骤1、清洗基片:选取直径为3英寸的Al2O3陶瓷基片作为基片,依次在丙酮、乙醇和去离子水中超声清洗15min,烘干,待用;
步骤2、利用甩胶机在步骤1清洗干净的基片表面涂覆一层PR1-4000A型光刻胶,采用光刻技术在基片表面形成一层光刻胶掩膜,然后采用磁控溅射法沉积MgAl薄膜作为储氢薄膜;其中,溅射气压为0.6Pa,溅射功率为100W,溅射气体为氩气,得到的MgAl薄膜的厚度为2μm;
步骤3、采用磁控溅射法在步骤2得到的MgAl薄膜上沉积一层Ta薄膜,作为保护层;其中,溅射气压为0.45Pa,溅射功率为40W,溅射气体为氩气,得到的Ta薄膜的厚度为20nm;
步骤4、将步骤3得到的带储氢薄膜和保护层的基片取出,在丙酮中浸泡以除去基片上的光刻胶和粘附于光刻胶上的薄膜,再采用去离子水冲洗干净,烘干;
步骤5、储氢薄膜的加氢反应:将步骤4烘干后的样品放置于3H-2000PH1型高温高压气体吸附仪中,抽真空至5×10-4Pa以下,然后加热基片至300℃;再向吸附仪中通入氢气,直至气体气压达到2MPa,在温度为300℃、氢气气压为2MPa的条件下,保持3h,以使储氢薄膜吸收氢气;完成所述氢爆膜桥的制备。
实施例2
本实施例与实施例1相比,区别在于,步骤5的过程为:将步骤4烘干后的样品放置于3H-2000PH1型高温高压气体吸附仪中,抽真空至5×10-4Pa以下,然后加热基片至600℃;再向吸附仪中通入氢气,直至气体气压达到0.5KPa,在温度为600℃、氢气气压为0.5KPa的条件下,保持20h,以使储氢薄膜吸收氢气。其余步骤与实施例1相同。
实施例3
本实施例与实施例1相比,区别在于,步骤5的过程为:将步骤4烘干后的样品放置于3H-2000PH1型高温高压气体吸附仪中,抽真空至5×10-4Pa以下,然后加热基片至900℃;再向吸附仪中通入氢气,直至气体气压达到3MPa,在温度为900℃、氢气气压为3MPa的条件下,保持80h,以使储氢薄膜吸收氢气;完成所述氢爆膜桥的制备。其余步骤与实施例1相同。
传统的金属薄膜桥发生***反应生成等离子体的过程中,会伴随能量扩散和热传递等现象,大部分的能量(电能,激光,冲击波等)并没有转换为飞片的动能,而是以热能或光能等形式消耗掉。与现有的***箔材料相比,本发明提出的氢爆膜桥在***箔作用过程中,储氢薄膜层发生物理形态的转变生成等离子体,同时储氢薄膜层释放的氢气与空气发生氢爆反应,在二者的共同作用下,增强了***箔的能量输出,提升了***箔的能量转换效率。因此,本发明氢爆膜桥在激励能量的作用下,储氢薄膜层以及其存储的氢气同时反应释放出巨大的能量,共同作用于飞片材料,使得飞片具有更高的动能,从而提升了***箔起爆***的可靠性和稳定性,并有效降低其起爆能量和起爆电压。
Claims (5)
1.一种高能量输出的氢爆膜桥,其特征在于,所述氢爆膜桥自下而上依次为基片、桥区薄膜层和保护层,所述桥区薄膜层为储氢薄膜,所述储氢薄膜为Ti/Mo、Ti/Fe、Ti/Ni、Mg/Al、Mg/Ni、Mg/Pd、Zr/Co或Zr。
2.根据权利要求1所述的高能量输出的氢爆膜桥,其特征在于,所述基片为陶瓷基底、硅基底或者玻璃基底;所述保护层材料为Ta、Mo或Cr。
3.根据权利要求1所述的高能量输出的氢爆膜桥,其特征在于,所述储氢薄膜的厚度为0.1~5μm,所述保护层的厚度为0.01~5μm。
4.一种高能量输出的氢爆膜桥的制备方法,包括以下步骤:
步骤1、采用磁控溅射法在基片上形成储氢薄膜;
步骤2、采用磁控溅射法在步骤1得到的储氢薄膜上形成保护层;
步骤3、将步骤2得到的带储氢薄膜和保护层的基片放置于气体吸附仪中,抽真空至5×10-4Pa以下,然后加热基片至20~1000℃;再向吸附仪中通入氢气,直至气体气压达到0.5kPa ~5MPa,在温度为20~1000℃、氢气气压为0.5kPa ~5MPa的条件下,保持0.5~100h,以使储氢薄膜吸收氢气;完成所述氢爆膜桥的制备。
5.一种高能量输出的氢爆膜桥的制备方法,具体包括以下步骤:
步骤1、清洗基片:将基片依次在丙酮、乙醇和去离子水中超声清洗,烘干,待用;
步骤2、采用磁控溅射法在步骤1清洗干净的基片上沉积MgAl薄膜作为储氢薄膜;其中,溅射气压为0.3~0.6Pa,溅射功率为40~200W,溅射气体为惰性气体,溅射时间为40~120min,得到的MgAl薄膜的厚度为0.1~5μm;
步骤3、采用磁控溅射法在步骤2得到的储氢薄膜上沉积一层Ta薄膜,作为保护层;其中,溅射气压为0.3~0.6Pa,溅射功率为40~200W,溅射气体为惰性气体,溅射时间为40~120min,得到的Ta薄膜的厚度为0.01~5μm;
步骤4、将步骤3得到的带储氢薄膜和保护层的基片取出,依次在丙酮和去离子水中清洗,烘干;
步骤5、储氢薄膜的加氢反应:将步骤4烘干后的样品放置于气体吸附仪中,抽真空至5×10-4Pa以下,然后加热基片至20~1000℃;再向吸附仪中通入氢气,直至气体气压达到0.5kPa ~5MPa,在温度为20~1000℃、氢气气压为0.5kPa ~5 MPa的条件下,保持0.5~100h,以使储氢薄膜吸收氢气;完成所述氢爆膜桥的制备。
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