CN109309039B - 芯片接合薄膜、切割芯片接合薄膜以及半导体装置制造方法 - Google Patents

芯片接合薄膜、切割芯片接合薄膜以及半导体装置制造方法 Download PDF

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Publication number
CN109309039B
CN109309039B CN201810843733.XA CN201810843733A CN109309039B CN 109309039 B CN109309039 B CN 109309039B CN 201810843733 A CN201810843733 A CN 201810843733A CN 109309039 B CN109309039 B CN 109309039B
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bonding film
die
dicing
die bonding
semiconductor
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Chinese (zh)
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CN109309039A (zh
Inventor
宍户雄一郎
高本尚英
大西谦司
木村雄大
福井章洋
大和道子
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Nitto Denko Corp
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Nitto Denko Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
CN201810843733.XA 2017-07-28 2018-07-27 芯片接合薄膜、切割芯片接合薄膜以及半导体装置制造方法 Active CN109309039B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017146107A JP7007827B2 (ja) 2017-07-28 2017-07-28 ダイボンドフィルム、ダイシングダイボンドフィルム、および半導体装置製造方法
JP2017-146107 2017-07-28

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CN109309039A CN109309039A (zh) 2019-02-05
CN109309039B true CN109309039B (zh) 2023-09-08

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JP (1) JP7007827B2 (ja)
KR (1) KR102491928B1 (ja)
CN (1) CN109309039B (ja)
TW (1) TWI789409B (ja)

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* Cited by examiner, † Cited by third party
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JP7046585B2 (ja) * 2017-12-14 2022-04-04 日東電工株式会社 接着フィルムおよびダイシングテープ付き接着フィルム
WO2019188817A1 (ja) * 2018-03-29 2019-10-03 リンテック株式会社 ワーク加工用シート
JP7389556B2 (ja) * 2019-03-04 2023-11-30 日東電工株式会社 ダイシングダイボンドフィルム
JP2020145392A (ja) * 2019-03-08 2020-09-10 日東電工株式会社 ダイシングテープ、及び接着フィルム付きダイシングテープ
JP7224231B2 (ja) * 2019-04-17 2023-02-17 日東電工株式会社 ダイシングダイボンドフィルム
JP7350534B2 (ja) * 2019-06-28 2023-09-26 日東電工株式会社 ダイシングテープ、及び、ダイシングダイボンドフィルム
JP7430039B2 (ja) * 2019-06-28 2024-02-09 日東電工株式会社 ダイシングテープ、及び、ダイシングダイボンドフィルム
CN114600225A (zh) * 2019-10-28 2022-06-07 昭和电工材料株式会社 膜状黏合剂及其分断性评价方法、切割晶粒接合一体型膜及其制造方法以及半导体装置
FR3103057B1 (fr) * 2019-11-08 2021-11-19 Aledia Procede de protection d'un dispositif optoelectronique contre les decharges electrostatiques
JP7151940B1 (ja) * 2021-02-03 2022-10-12 住友ベークライト株式会社 封止用樹脂組成物および半導体装置

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JP2002158276A (ja) * 2000-11-20 2002-05-31 Hitachi Chem Co Ltd ウエハ貼着用粘着シートおよび半導体装置
JP2002309065A (ja) * 2001-04-10 2002-10-23 Toshiba Chem Corp ダイボンディングペースト
CN101794722A (zh) * 2009-01-30 2010-08-04 日本电工株式会社 切割带集成晶片背面保护膜
CN101835861A (zh) * 2007-12-10 2010-09-15 Lg化学株式会社 粘性膜以及采用该膜的切割芯片结合膜和半导体器件
CN101857778A (zh) * 2009-04-08 2010-10-13 日东电工株式会社 热固型芯片接合薄膜
JP2013181049A (ja) * 2012-02-29 2013-09-12 Hitachi Chemical Co Ltd フィルム状接着剤、接着シート及び半導体装置
CN103923573A (zh) * 2013-01-10 2014-07-16 日东电工株式会社 胶粘薄膜、切割/芯片接合薄膜、半导体装置的制造方法及半导体装置
CN104946149A (zh) * 2014-03-31 2015-09-30 日东电工株式会社 带有切割片的芯片接合膜、半导体装置及半导体装置的制造方法
JP2017069560A (ja) * 2015-09-30 2017-04-06 日東電工株式会社 加熱接合用シート、及び、ダイシングテープ付き加熱接合用シート

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JP4876451B2 (ja) 2005-06-27 2012-02-15 日立化成工業株式会社 接着シート
JP4360446B1 (ja) * 2008-10-16 2009-11-11 住友ベークライト株式会社 半導体装置の製造方法及び半導体装置
JP5255465B2 (ja) 2009-01-29 2013-08-07 古河電気工業株式会社 ウエハ加工用テープ
JP2012023161A (ja) 2010-07-14 2012-02-02 Furukawa Electric Co Ltd:The 半導体装置を製造する際に用いるウエハ加工用シート及びその製造方法並びに半導体装置の製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002158276A (ja) * 2000-11-20 2002-05-31 Hitachi Chem Co Ltd ウエハ貼着用粘着シートおよび半導体装置
JP2002309065A (ja) * 2001-04-10 2002-10-23 Toshiba Chem Corp ダイボンディングペースト
CN101835861A (zh) * 2007-12-10 2010-09-15 Lg化学株式会社 粘性膜以及采用该膜的切割芯片结合膜和半导体器件
CN101794722A (zh) * 2009-01-30 2010-08-04 日本电工株式会社 切割带集成晶片背面保护膜
CN101857778A (zh) * 2009-04-08 2010-10-13 日东电工株式会社 热固型芯片接合薄膜
JP2013181049A (ja) * 2012-02-29 2013-09-12 Hitachi Chemical Co Ltd フィルム状接着剤、接着シート及び半導体装置
CN103923573A (zh) * 2013-01-10 2014-07-16 日东电工株式会社 胶粘薄膜、切割/芯片接合薄膜、半导体装置的制造方法及半导体装置
CN104946149A (zh) * 2014-03-31 2015-09-30 日东电工株式会社 带有切割片的芯片接合膜、半导体装置及半导体装置的制造方法
JP2017069560A (ja) * 2015-09-30 2017-04-06 日東電工株式会社 加熱接合用シート、及び、ダイシングテープ付き加熱接合用シート
CN108174617A (zh) * 2015-09-30 2018-06-15 日东电工株式会社 加热接合用片材及带有切割带的加热接合用片材

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Publication number Publication date
TWI789409B (zh) 2023-01-11
JP2019029465A (ja) 2019-02-21
JP7007827B2 (ja) 2022-01-25
CN109309039A (zh) 2019-02-05
KR20190013519A (ko) 2019-02-11
KR102491928B1 (ko) 2023-01-27
TW201923868A (zh) 2019-06-16

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