JP2019104863A - 接着フィルムおよびダイシングテープ付き接着フィルム - Google Patents
接着フィルムおよびダイシングテープ付き接着フィルム Download PDFInfo
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- JP2019104863A JP2019104863A JP2017239270A JP2017239270A JP2019104863A JP 2019104863 A JP2019104863 A JP 2019104863A JP 2017239270 A JP2017239270 A JP 2017239270A JP 2017239270 A JP2017239270 A JP 2017239270A JP 2019104863 A JP2019104863 A JP 2019104863A
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- Prior art keywords
- adhesive film
- dicing tape
- adhesive
- semiconductor chip
- adhesive layer
- Prior art date
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- 125000000687 hydroquinonyl group Chemical class C1(O)=C(C=C(O)C=C1)* 0.000 description 1
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- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 1
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- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
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- IUURMAINMLIZMX-UHFFFAOYSA-N tris(2-nonylphenyl)phosphane Chemical compound CCCCCCCCCC1=CC=CC=C1P(C=1C(=CC=CC=1)CCCCCCCCC)C1=CC=CC=C1CCCCCCCCC IUURMAINMLIZMX-UHFFFAOYSA-N 0.000 description 1
- WXAZIUYTQHYBFW-UHFFFAOYSA-N tris(4-methylphenyl)phosphane Chemical compound C1=CC(C)=CC=C1P(C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 WXAZIUYTQHYBFW-UHFFFAOYSA-N 0.000 description 1
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- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
Landscapes
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
- Dicing (AREA)
Abstract
Description
(A)レーザー光
レーザー光源 半導体レーザー励起Nd:YAGレーザー
波長 1064nm
レーザー光スポット断面積 3.14×10-8cm2
発振形態 Qスイッチパルス
繰り返し周波数 100kHz以下
パルス幅 1μs以下
出力 1mJ以下
レーザー光品質 TEM00
偏光特性 直線偏光
(B)集光用レンズ
倍率 100倍以下
NA 0.55
レーザー光波長に対する透過率 100%以下
(C)半導体基板が載置される載置台の移動速度 280mm/秒以下
〈接着フィルムの作製〉
アクリル樹脂A1(商品名「テイサンレジン SG-708-6」,重量平均分子量は70万,ガラス転移温度Tgは4℃,ナガセケムテックス株式会社製)100質量部と、エポキシ樹脂E1(商品名「EPPN 501HY」,日本化薬株式会社製)144質量部と、フェノール樹脂F1(商品名「LVR8210-DL」,群栄化学工業株式会社製)89質量部と、無機フィラー(商品名「SE-2050MCV」,シリカ粒子,平均粒径は0.5μm,株式会社アドマテックス製)222質量部と、シランカップリング剤(商品名「KBM-303」,信越化学株式会社製)1.4質量部と、硬化触媒(商品名「TPP-K」,北興化学株式会社製)0.25質量部とを、メチルエチルケトンに加えて混合し、接着剤組成物を得た。次に、シリコーン離型処理の施された面を有するPETセパレータ(厚さ38μm)のシリコーン離型処理面上にアプリケーターを使用して接着剤組成物を塗布して接着剤組成物層を形成した。次に、この組成物層について130℃で2分間の加熱乾燥を行い、PETセパレータ上に厚さ40μmの接着フィルムを作製した。そして、このようにして作製される3枚の接着フィルムを、ロールラミネーターを使用して貼り合わせ、実施例1の接着フィルム(厚さ120μm)を作製した。この貼り合わせでは、貼合わせ速度を10mm/秒とし、温度条件を60℃とし、圧力条件を0.15MPaとした。実施例1ならびに後記の各実施例および各比較例における接着フィルムの組成を表1に掲げる(表1において、接着フィルムの組成を表す各数値の単位は、当該組成内での相対的な“質量部”である)。
冷却管と、窒素導入管と、温度計と、撹拌装置とを備える反応容器内で、アクリル酸2-エチルヘキシル86.4質量部と、アクリル酸2-ヒドロキシエチル13.6質量部と、重合開始剤たる過酸化ベンゾイル0.2質量部と、重合溶媒たるトルエン65質量部とを含む混合物を、61℃で6時間、窒素雰囲気下で撹拌した(重合反応)。これにより、アクリル系ポリマーP1を含有するポリマー溶液を得た。次に、このアクリル系ポリマーP1を含有するポリマー溶液と、2-メタクリロイルオキシエチルイソシアネート(MOI)と、付加反応触媒としてのジブチル錫ジラウリレートとを含む混合物を、50℃で48時間、空気雰囲気下で撹拌した(付加反応)。当該反応溶液において、MOIの配合量は、上記アクリル系ポリマーP1100質量部に対して14.6質量部であり、ジブチル錫ジラウリレートの配合量は、アクリル系ポリマーP1100質量部に対して0.5質量部である。この付加反応により、側鎖にメタクリレート基を有するアクリル系ポリマーP2を含有するポリマー溶液を得た。次に、当該ポリマー溶液に、アクリル系ポリマーP2100質量部に対して2質量部のポリイソシアネート化合物(商品名「コロネートL」,東ソー株式会社製)と、5質量部の光重合開始剤(商品名「イルガキュア651」,BASF社製)とを加えて混合し、粘着剤組成物を得た。次に、シリコーン離型処理の施された面を有するPETセパレータ(厚さ38μm)のシリコーン離型処理面上にアプリケーターを使用して粘着剤組成物を塗布して粘着剤組成物層を形成した。次に、この組成物層について120℃で2分間の加熱乾燥を行い、PETセパレータ上に厚さ10μmの粘着剤層を形成した。次に、ラミネーターを使用して、この粘着剤層の露出面にエチレン−酢酸ビニル共重合体(EVA)製の基材(商品名「ファンクレア NRB#115」,厚さ115μm,グンゼ株式会社製)を室温で貼り合わせた。以上のようにしてダイシングテープを作製した。
PETセパレータを伴う実施例1の上述の接着フィルムを直径330mmの円盤形状に打ち抜き加工した。次に、当該接着フィルムからPETセパレータを剥離し且つ上述のダイシングテープからPETセパレータを剥離した後、当該ダイシングテープにおいて露出した粘着剤層と、接着フィルムにおいてPETセパレータの剥離によって露出した面とを、ロールラミネーターを使用して貼り合わせた。この貼り合わせにおいて、貼合わせ速度を10mm/秒とし、温度条件を40℃とし、圧力条件を0.15MPaとした。次に、このようにして接着フィルムと貼り合わせられたダイシングテープを、ダイシングテープの中心と接着フィルムの中心とが一致するように、直径390mmの円盤形状に打ち抜き加工した。次に、ダイシングテープにおける粘着剤層に対し、EVA基材の側から紫外線を照射した。紫外線照射においては、高圧水銀ランプを使用し、照射積算光量を400mJ/cm2とした。以上のようにして、ダイシングテープと接着フィルムとを含む積層構造を有する実施例1のダイシングテープ付き接着フィルムを作製した。
アクリル樹脂A1100質量部に代えてアクリル樹脂A2(商品名「テイサンレジン SG-P3」,重量平均分子量は85万,ガラス転移温度Tgは12℃,ナガセケムテックス株式会社製)100質量部を用いたこと以外は実施例1の接着フィルムと同様にして、実施例2の接着フィルム(厚さ120μm)を作製した。また、この実施例2の接着フィルムを実施例1の上述の接着フィルムの代わりに用いたこと以外は実施例1のダイシングテープ付き接着フィルムと同様にして、実施例2のダイシングテープ付き接着フィルムを作製した。
アクリル樹脂A3(商品名「テイサンレジン SG-70L」,重量平均分子量は90万,ガラス転移温度Tgは−13℃,ナガセケムテックス株式会社製)100質量部と、エポキシ樹脂E2(商品名「KI-3000-4」,新日鉄住金化学株式会社製)87質量部と、エポキシ樹脂E3(商品名「YL-980」,三菱ケミカル株式会社製)79質量部と、フェノール樹脂F2(商品名「MEH-7851SS」,明和化成株式会社製)178質量部と、無機フィラー(商品名「SE-2050MCV」,シリカ粒子,平均粒径は0.5μm,株式会社アドマテックス製)296質量部と、シランカップリング剤(商品名「KBM-303」,信越化学株式会社製)1.9質量部と、硬化触媒(商品名「TPP-K」,北興化学株式会社製)0.9質量部とを、メチルエチルケトンに加えて混合し、接着剤組成物を得た。次に、シリコーン離型処理の施された面を有するPETセパレータ(厚さ38μm)のシリコーン離型処理面上にアプリケーターを使用して接着剤組成物を塗布して接着剤組成物層を形成した。次に、この組成物層について130℃で2分間の加熱乾燥を行い、PETセパレータ上に厚さ40μmの接着フィルムを作製した。そして、このようにして作製される3枚の接着フィルムを、ロールラミネーターを使用して貼り合わせ、実施例3の接着フィルム(厚さ120μm)を作製した。この貼り合わせでは、貼合わせ速度を10mm/秒とし、温度条件を60℃とし、圧力条件を0.15MPaとした。また、この実施例3の接着フィルムを実施例1の上述の接着フィルムの代わりに用いたこと以外は実施例1のダイシングテープ付き接着フィルムと同様にして、実施例3のダイシングテープ付き接着フィルムを作製した。
エポキシ樹脂E2の配合量を87質量部に代えて144質量部としたこと、エポキシ樹脂E3の配合量を79質量部に代えて130質量部としたこと、フェノール樹脂F2の配合量を178質量部に代えて293質量部としたこと、無機フィラー(商品名「SE-2050MCV」,株式会社アドマテックス製)の配合量を296質量部に代えて444質量部としたこと、シランカップリング剤(商品名「KBM-303」,信越化学株式会社製)の配合量を1.9質量部に代えて2.8質量部としたこと、および、硬化触媒(商品名「TPP-K」,北興化学株式会社製)の配合量を0.9質量部に代えて1.3質量部としたこと、以外は実施例3の接着フィルムと同様にして、実施例4の接着フィルム(厚さ120μm)を作製した。また、この実施例4の接着フィルムを実施例1の上述の接着フィルムの代わりに用いたこと以外は実施例1のダイシングテープ付き接着フィルムと同様にして、実施例4のダイシングテープ付き接着フィルムを作製した。
エポキシ樹脂E2の配合量を87質量部に代えて102質量部としたこと、エポキシ樹脂E3の配合量を79質量部に代えて13質量部としたこと、フェノール樹脂F2の配合量を178質量部に代えて119質量部としたこと、無機フィラー(商品名「SE-2050MCV」,株式会社アドマテックス製)の配合量を296質量部に代えて222質量部としたこと、シランカップリング剤(商品名「KBM-303」,信越化学株式会社製)の配合量を1.9質量部に代えて1.4質量部としたこと、および、硬化触媒(商品名「TPP-K」,北興化学株式会社製)の配合量を0.9質量部に代えて0.67質量部としたこと、以外は実施例3の接着フィルムと同様にして、比較例1の接着フィルム(厚さ120μm)を作製した。また、この比較例1の接着フィルムを実施例1の上述の接着フィルムの代わりに用いたこと以外は実施例1のダイシングテープ付き接着フィルムと同様にして、比較例1のダイシングテープ付き接着フィルムを作製した。
エポキシ樹脂E2の配合量を87質量部に代えて92質量部としたこと、エポキシ樹脂E3を配合しなかったこと、フェノール樹脂F2の配合量を178質量部に代えて94質量部としたこと、無機フィラー(商品名「SE-2050MCV」,株式会社アドマテックス製)の配合量を296質量部に代えて286質量部としたこと、シランカップリング剤(商品名「KBM-303」,信越化学株式会社製)の配合量を1.9質量部に代えて1.4質量部としたこと、および、硬化触媒(商品名「TPP-K」,北興化学株式会社製)の配合量を0.9質量部に代えて0.6質量部としたこと、以外は実施例3の接着フィルムと同様にして、比較例2の接着フィルム(厚さ120μm)を作製した。また、この比較例2の接着フィルムを実施例1の上述の接着フィルムの代わりに用いたこと以外は実施例1のダイシングテープ付き接着フィルムと同様にして、比較例2のダイシングテープ付き接着フィルムを作製した。
実施例1〜4および比較例1,2の各接着フィルムについて、150℃での1時間の加熱とその後の175℃での1時間の加熱によって硬化させた。そして、硬化後の接着フィルムから切り出された各接着フィルム試験片(長さ40mm,幅5mm,厚さ120μm)について、熱機械分析装置(商品名「TMA Q400EM」,TA Instruments製)を使用して温度変調TMA測定を行い、−60℃から125℃まで昇温した場合の総変位量および不可逆変位量を調べた。この測定において、測定モードは引張モードであり、初期チャック間距離は16mm、試験片にかけ続ける引張荷重は0.002N、測定温度範囲は−60℃から125℃、平均昇温速度は1℃/分、温度変調周期300秒、温度変調振幅は5℃である。試験片が−60℃から125℃まで昇温した時点での試験片引張方向における寸法変化(即ち、125℃でのチャック間距離と−60℃での初期チャック間距離との差)を−60℃での初期チャック間距離で除した値を総変位量(%)として表1に掲げる。また、試験片が−60℃から125℃まで昇温した時点での試験片引張方向における寸法変化に含まれる上述の不可逆成分を−60℃での初期チャック間距離で除した値を不可逆変位量(%)として表1に掲げる。
実施例1〜4および比較例1,2の各接着フィルムについて、150℃での1時間の加熱とその後の175℃での1時間の加熱によって硬化させた。そして、硬化後の接着フィルムから切り出された各接着フィルム試験片(長さ40mm,幅5mm,厚さ120μm)について、動的粘弾性測定装置(商品名「RSA-III」,TA Instruments製)を使用して引張試験を行い、引張貯蔵弾性率を測定した。この引張試験において、測定モードは引張モードであり、初期チャック間距離は22.5mm、測定温度範囲は0℃から150℃、昇温速度は10℃/分、動的ひずみは±0.5μm、周波数は1Hzである。求められた125℃での引張貯蔵弾性率(MPa)を表1に掲げる。
実施例1〜4および比較例1,2の各ダイシングテープ付き接着フィルムを使用して接着フィルム付き半導体チップを得たうえで、当該半導体チップを基板にダイボンディングして得られる接合体サンプルについて温度サイクル試験を行った。
10,11 接着フィルム
20 ダイシングテープ
21 基材
22 粘着剤層
W,30,30A,30C 半導体ウエハ
30B 半導体ウエハ分割体
30a 分割溝
30b 改質領域
31,31’,C 半導体チップ
Claims (7)
- 幅5mmの硬化後の接着フィルム試験片について0.002Nの引張荷重をかけつつ平均昇温速度1℃/分、温度変調周期300秒および温度変調振幅5℃の条件で−60℃から125℃まで昇温する温度変調TMA測定における不可逆変位量が、0.65%以下である、接着フィルム。
- 前記温度変調TMA測定における総変位量が1.65%以下である、請求項1に記載の接着フィルム。
- 幅5mmの硬化後の接着フィルム試験片について初期チャック間距離22.5mm、周波数1Hz、動的ひずみ±0.5μm、および昇温速度10℃/分の条件で測定される125℃での引張貯蔵弾性率が400MPa以上である、請求項1または2に記載の接着フィルム。
- 40〜150μmの厚さを有する、請求項1から3のいずれか一つに記載の接着フィルム。
- 実装基板にワイヤーボンディング実装された第1半導体チップを当該第1半導体チップに接続されたボンディングワイヤーの全体または一部とともに包埋しつつ前記実装基板に第2半導体チップを接合する接着層を形成することが可能な、請求項1から4のいずれか一つに記載の接着フィルム。
- 実装基板にフリップチップ実装された第1半導体チップを包埋しつつ前記実装基板に第2半導体チップを接合する接着層を形成することが可能な、請求項1から4のいずれか一つに記載の接着フィルム。
- 基材と粘着剤層とを含む積層構造を有するダイシングテープと、
前記ダイシングテープにおける前記粘着剤層に剥離可能に密着している、請求項1から6のいずれか一つに記載の接着フィルムと、を備えるダイシングテープ付き接着フィルム。
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JP7430039B2 (ja) | 2019-06-28 | 2024-02-09 | 日東電工株式会社 | ダイシングテープ、及び、ダイシングダイボンドフィルム |
WO2021045157A1 (ja) * | 2019-09-06 | 2021-03-11 | 昭和電工マテリアルズ株式会社 | 半導体装置の製造方法及びコレット |
JP2021044293A (ja) * | 2019-09-06 | 2021-03-18 | 昭和電工マテリアルズ株式会社 | 半導体装置の製造方法及びコレット |
JP7298404B2 (ja) | 2019-09-06 | 2023-06-27 | 株式会社レゾナック | 半導体装置の製造方法 |
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