CN108711550A - 加工方法 - Google Patents
加工方法 Download PDFInfo
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- CN108711550A CN108711550A CN201810239189.8A CN201810239189A CN108711550A CN 108711550 A CN108711550 A CN 108711550A CN 201810239189 A CN201810239189 A CN 201810239189A CN 108711550 A CN108711550 A CN 108711550A
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- Prior art keywords
- machined object
- cutting
- cut
- laminated body
- laser
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
本发明提供一种加工方法,在对与切断预定线重叠地形成有包含金属的层叠体的板状的被加工物进行加工时,能够在维持加工品质的同时提高加工速度。其是对在背面侧形成有包含金属的层叠体的板状的被加工物进行加工的加工方法,包括:保持步骤,利用保持工作台对被加工物的背面侧进行保持;激光加工步骤,在实施保持步骤后,在被加工物的表面沿着切断预定线照射相对于被加工物具有吸收性的波长的激光束,形成未到达层叠体的激光加工槽;切削步骤,在实施激光加工步骤后,利用切削刀具对激光加工槽的底部进行切削,将被加工物与层叠体一起沿着切断预定线切断,在切削步骤中,一边对被加工物供给包含有机酸和氧化剂的切削液,一边执行切削。
Description
技术领域
本发明涉及用于对与切断预定线重叠地形成有包含金属的层叠体的板状的被加工物进行加工的加工方法。
背景技术
在以移动电话、个人计算机为代表的电子设备中,具备电子电路等器件的器件芯片成为了必要的构成要素。器件芯片例如如下得到:利用两条以上的切断预定线(间隔道)对由硅等半导体材料形成的晶片的表面进行划分,在各区域形成器件后,沿着该切断预定线将晶片切断,由此得到器件芯片。
近年来,大多在上述那样的晶片的切断预定线上配置被称为TEG(Test ElementsGroup,测试元件组)的评价用元件(参见例如专利文献1、2等),用于评价器件的电特性。通过在切断预定线上配置TEG,能够最大限度地确保器件芯片的取得数,并且能够与晶片的切断同时除去评价后不需要的TEG。
现有技术文献
专利文献
专利文献1:日本特开平6-349926号公报
专利文献2:日本特开2005-21940号公报
发明内容
发明所要解决的课题
但是,若要使用磨粒分散于结合材料中而成的切削刀具对TEG之类的包含金属的层叠体进行切削、除去,则层叠体所含的金属在切削时伸长,容易产生被称为毛刺的突起。并且,若利用切削刀具进行的加工的速度提高,放热量增加,则毛刺也变大。因此,在该方法中,需要将加工速度抑制得较低,使得加工品质不降低。
本发明是鉴于上述问题而完成的,其目的在于提供一种加工方法,该加工方法在对与切断预定线重叠地形成有包含金属的层叠体的板状的被加工物进行加工时,能够在维持加工品质的同时提高加工速度。
用于解决课题的手段
根据本发明的一个方式,提供一种加工方法,其对在背面侧形成有包含金属的层叠体的板状的被加工物进行加工,该加工方法具备下述步骤:保持步骤,利用保持工作台对被加工物的该背面侧进行保持;激光加工步骤,在实施该保持步骤后,在被加工物的表面沿着该切断预定线照射相对于被加工物具有吸收性的波长的激光束,形成未到达该层叠体的激光加工槽;和切削步骤,在实施该激光加工步骤后,利用切削刀具对该激光加工槽的底部进行切削,将被加工物与该层叠体一起沿着该切断预定线切断;在该切削步骤中,一边对被加工物供给包含有机酸和氧化剂的切削液,一边执行切削。
在上述本发明的一个方式中,可以进一步具备保护部件配设步骤,在实施该切削步骤之前,在被加工物的该背面配设保护部件,在隔着该保护部件对被加工物的该背面侧进行保持的状态下实施该切削步骤。
另外,在上述本发明的一个方式中,优选在该切削步骤中使用厚度比该激光加工槽的宽度薄的该切削刀具。
另外,在上述本发明的一个方式中,可以进一步具备保护部件配设步骤,在实施该激光加工步骤之后且在实施该切削步骤之前,在被加工物的该表面配设保护部件,该切削步骤在隔着该保护部件对被加工物的该表面侧进行保持的状态下实施。
发明效果
在本发明的一个方式的加工方法中,在切断包含金属的层叠体时,一边对被加工物供给包含有机酸和氧化剂的切削液一边执行切削,因此能够一边利用有机酸和氧化剂对层叠体所含的金属进行改性而使其延展性降低,一边执行切削。由此,即便提高加工的速度,也能抑制毛刺的产生。即,可在维持加工品质的同时提高加工速度。
附图说明
图1的(A)是示意性地示出被加工物的结构例的立体图,图1的(B)是用于说明第一片材粘贴步骤的立体图。
图2的(A)是用于说明第一保持步骤的局部截面侧视图,图2的(B)是用于说明激光加工步骤的局部截面侧视图。
图3的(A)是用于说明第二片材粘贴步骤的立体图,图3的(B)是用于说明第二保持步骤的局部截面侧视图。
图4是用于说明切削步骤的局部截面侧视图。
图5的(A)是用于说明变形例的激光加工步骤的局部截面侧视图,图5的(B)是用于说明变形例的切削步骤的局部截面侧视图。
图6是示出用于供给切削液的其它方式的喷嘴的侧视图。
具体实施方式
参照附图,对本发明的一个方式的实施方式进行说明。本实施方式的加工方法是用于对在背面侧形成有包含金属的层叠体的板状的被加工物进行加工的加工方法,该加工方法包括第一片材粘贴步骤(第一保护部件配设步骤)(参照图1的(B))、第一保持步骤(参照图2的(A))、激光加工步骤(参照图2的(B))、第二片材粘贴步骤(第二保护部件配设步骤)(参照图3的(A))、第二保持步骤(参照图3的(B))以及切削步骤(参照图4)。
在第一片材粘贴步骤中,在背面侧具有层叠体的被加工物的背面粘贴(配设)片材(保护部件)。在第一保持步骤中,利用激光加工装置的卡盘工作台(第一保持工作台)对被加工物的背面侧进行保持。在激光加工步骤中,在表面侧照射能被被加工物吸收的波长(相对于被加工物具有吸收性的波长)的激光束,沿着切断预定线形成深度未到达层叠体的激光加工槽。
在第二片材粘贴步骤中,在被加工物的表面粘贴(配设)片材(保护部件)。在第二保持步骤中,利用切削装置的卡盘工作台(第二保持工作台)对被加工物的表面侧进行保持。在切削步骤中,一边供给包含有机酸和氧化剂的切削液,一边对激光加工槽的底部进行切削,将被加工物与层叠体一起沿着切断预定线切断。下面,对本实施方式的加工方法进行详细说明。
图1的(A)是示意性地示出利用本实施方式的加工方法进行加工的被加工物11的结构例的立体图。如图1的(A)所示,本实施方式的被加工物11是使用硅(Si)等半导体材料呈圆盘状地形成的晶片,其表面11a侧被分成中央的器件区域、和包围器件区域的外周剩余区域。
器件区域被呈格子状排列的切断预定线(间隔道)13进一步划分成两个以上的区域,在各区域形成有IC(Integrated Circuit,集成电路)等器件15。另外,在被加工物11的背面11b侧设置有包含金属的层叠体17。该层叠体17例如为由钛(Ti)、镍(Ni)、金(Au)等形成的厚度为几μm左右的多层金属膜,其作为电极等发挥功能。该层叠体17也形成于与切断预定线13重叠的区域。
需要说明的是,在本实施方式中,将由硅等半导体材料形成的圆盘状的晶片作为被加工物11,但对于被加工物11的材质、形状、结构、尺寸等没有限制。同样地,对于器件15或层叠体17的种类、数量、形状、结构、尺寸、配置等也没有限制。例如,也可以使用沿着切断预定线13形成有作为电极发挥功能的层叠体17的封装基板等来作为被加工物11。
在本实施方式的加工方法中,首先,进行第一片材粘贴步骤(第一保护部件配设步骤),在上述被加工物11的背面11b粘贴(配设)片材(保护部件)。图1的(B)是用于说明第一片材粘贴步骤的立体图。如图1的(B)所示,在第一片材粘贴步骤中,将直径大于被加工物11的树脂制的片材(保护部件)21粘贴至被加工物11的背面侧11b。另外,将环状的框架23固定于片材21的外周部分。
由此,被加工物11借助片材21而被支承于环状的框架23。需要说明的是,在本实施方式中,以对借助片材21而被支承于环状的框架23的状态的被加工物11进行加工为例进行说明,但也可以不使用片材21、框架23而对被加工物11进行加工。该情况下,省略第一片材粘贴步骤。另外,也可以代替树脂制的片材21,而将与被加工物11等同的晶片或其它基板等作为保护部件粘贴至被加工物11。
在第一片材粘贴步骤之后,进行第一保持步骤,利用激光加工装置的卡盘工作台(第一保持工作台)对被加工物11进行保持。图2的(A)是用于说明第一保持步骤的局部截面侧视图。第一保持步骤例如使用图2的(A)所示的激光加工装置2来进行。激光加工装置2具备用于吸引、保持被加工物11的卡盘工作台(第一保持工作台)4。
卡盘工作台4与电动机等旋转驱动源(未图示)连结,绕与铅垂方向大致平行的旋转轴旋转。另外,在卡盘工作台4的下方设置有移动机构(未图示),卡盘工作台4通过该移动机构在加工进给方向(第一水平方向)和分度进给方向(第二水平方向)上移动。
卡盘工作台4的上表面的一部分成为用于吸引、保持被加工物11(片材21)的保持面4a。保持面4a通过形成于卡盘工作台4的内部的吸引路(未图示)等与吸引源(未图示)连接。通过使吸引源的负压作用于保持面4a,被加工物11被吸引、保持于卡盘工作台4。在该卡盘工作台4的周围设置有用于固定环状的框架23的两个以上的夹具6。
在第一保持步骤中,首先,使粘贴于被加工物11的背面11b侧的片材21与卡盘工作台4的保持面4a接触,并作用吸引源的负压。并且,利用夹具6固定框架23。由此,被加工物11以表面11a侧向上方露出的状态被保持。
在第一保持步骤之后,进行激光加工步骤,从被加工物11的表面11a侧照射激光束,沿着切断预定线形成深度未到达层叠体17的激光加工槽。激光加工步骤继续使用激光加工装置2来进行。图2的(B)是用于说明激光加工步骤的局部截面侧视图。如图2的(B)所示,激光加工装置2进一步具备配置于卡盘工作台4的上方的激光照射单元8。
激光照射单元8将利用激光振荡器(未图示)脉冲振荡出的激光束8a照射、会聚到规定的位置。激光振荡器构成为能够脉冲振荡出能被被加工物11吸收的波长(相对于被加工物11具有吸收性的波长、容易被吸收的波长)的激光束8a。
在激光加工步骤中,首先使卡盘工作台4旋转,使作为对象的切断预定线13的延伸方向与激光加工装置2的加工进给方向对齐。并且,使卡盘工作台4移动,使激光照射单元8的位置对齐在作为对象的切断预定线13的延长线上。
然后,如图2的(B)所示,一边从激光照射单元8朝向被加工物11的露出的表面11a照射激光束8a,一边使卡盘工作台4在加工进给方向上移动。此处,例如使激光束8a会聚到被加工物11的表面11a或内部等。另外,激光束8a的能量(功率、重复频率等)在不切断被加工物11的范围内进行调整。
由此,能够沿着作为对象的切断预定线13照射激光束8a,沿着切断预定线13形成深度未到达层叠体17的激光加工槽19a。重复上述操作,例如,若沿着全部切断预定线13形成激光加工槽19a,则激光加工步骤结束。
在激光加工步骤之后,进行第二片材粘贴步骤(第二保护部件配设步骤),在被加工物11的表面11a粘贴(配设)片材(保护部件)。图3的(A)是用于说明第二片材粘贴步骤的立体图。如图3的(A)所示,在第二片材粘贴步骤中,将直径大于被加工物11的树脂制的片材(保护部件)25粘贴至被加工物11的表面11a。另外,将环状的框架27固定于片材25的外周部分。
由此,被加工物11借助片材25而被支承于环状的框架27。需要说明的是,在本实施方式中,以对借助片材25而被支承于环状的框架27的状态的被加工物11进行加工为例进行说明,但也可以不使用片材25、框架27而对被加工物11进行加工。该情况下,省略第二片材粘贴步骤。另外,也可以代替树脂制的片材25,而将与被加工物11等同的晶片或其它基板等作为保护部件粘贴至被加工物11。
在第二片材粘贴步骤之后,进行第二保持步骤,利用切削装置的卡盘工作台(第二保持工作台)对被加工物11进行保持。图3的(B)是用于说明第二保持步骤的局部截面侧视图。需要说明的是,在第二保持步骤之前将背面11b侧的片材21和框架23除去。第二保持步骤例如使用图3的(B)所示的切削装置12来进行。切削装置12具备用于吸引、保持被加工物11的卡盘工作台(第二保持工作台)14。
卡盘工作台14与电动机等旋转驱动源(未图示)连结,绕与铅垂方向大致平行的旋转轴旋转。另外,在卡盘工作台14的下方设置有加工进给机构(未图示),卡盘工作台14通过该加工进给机构在加工进给方向(第一水平方向)上移动。
卡盘工作台14的上表面的一部分成为用于吸引、保持被加工物11(片材25)的保持面14a。保持面14a通过形成于卡盘工作台14的内部的吸引路(未图示)等与吸引源(未图示)连接。通过使吸引源的负压作用于保持面14a,被加工物11被吸引、保持于卡盘工作台14。在该卡盘工作台14的周围设置有用于固定环状的框架27的两个以上的夹具16。
在第二保持步骤中,首先,使粘贴于被加工物11的表面11a侧的片材25与卡盘工作台14的保持面14a接触,并作用吸引源的负压。并且,利用夹具16固定框架27。由此,被加工物11以背面11b侧的层叠体17向上方露出的状态被保持。
在第二保持步骤之后,进行切削步骤,对激光加工槽19a的底部进行切削,将被加工物11与层叠体17一起沿着切断预定线13切断。图4是用于说明切削步骤的局部截面侧视图。切削步骤继续使用切削装置12来进行。如图4所示,切削装置12进一步具备配置于卡盘工作台14的上方的切削单元18。
切削单元18具备与加工进给方向大致垂直的作为旋转轴的主轴(未图示)。在主轴的一端侧安装有磨粒分散于结合材料中而成的环状的切削刀具20。在主轴的另一端侧连结有电动机等旋转驱动源(未图示),安装于主轴的一端侧的切削刀具20通过从该旋转驱动源传递的力而旋转。
另外,主轴被支承于移动机构(未图示)。切削刀具20通过该移动机构在与加工进给方向垂直的分度进给方向(第二水平方向)以及铅垂方向上移动。在切削刀具20的侧方以夹持切削刀具20的方式配置有一对喷嘴22。喷嘴22构成为能够对切削刀具20、被加工物11供给切削液24。
在切削步骤中,首先使卡盘工作台14旋转,使作为对象的激光加工槽19a(即,切断预定线13)的延伸方向与切削装置2的加工进给方向对齐。并且,使卡盘工作台14和切削单元18相对地移动,使切削刀具20的位置对齐在作为对象的激光加工槽19a的延长线上。然后,使切削刀具20的下端移动至低于层叠体17的下表面的位置。需要说明的是,例如,通过使用对红外线具有灵敏度的照相机等,能够从背面11b侧确认激光加工槽19a的位置。
然后,一边使切削刀具20旋转一边使卡盘工作台14在加工进给方向上移动。并且,从喷嘴22对切削刀具20和被加工物11供给包含有机酸和氧化剂的切削液24。由此,能够使切削刀具20沿着对象激光加工槽19a切入,对激光加工槽19a的底部进行切削,形成在厚度方向上切断层叠体17以及被加工物11的切口(切缝)19b。
如本实施方式那样,通过使切削液24包含有机酸,能够对层叠体17中的金属进行改性而抑制其延展性。另外,通过使切削液24包含氧化剂,层叠体17中的金属的表面容易发生氧化。其结果是,可充分降低层叠体17中的金属的延展性,提高加工性。
作为切削液24所含的有机酸,可以使用例如在分子内具有至少1个羧基和至少1个氨基的化合物。这种情况下,优选氨基中的至少1个为仲氨基或叔氨基。另外,作为有机酸使用的化合物可以具有取代基。
作为可用作有机酸的氨基酸,可以举出甘氨酸、二羟基乙基甘氨酸、双甘氨肽、羟基乙基甘氨酸、N-甲基甘氨酸、β-丙氨酸、L-丙氨酸、L-2-氨基丁酸、L-正缬氨酸、L-缬氨酸、L-亮氨酸、L-正亮氨酸、L-别异亮氨酸、L-异亮氨酸、L-苯丙氨酸、L-脯氨酸、肌氨酸、L-鸟氨酸、L-赖氨酸、牛磺酸、L-丝氨酸、L-苏氨酸、L-别苏氨酸、L-高丝氨酸、L-甲状腺素、L-酪氨酸、3,5-二碘-L-酪氨酸、β-(3,4-二羟基苯基)-L-丙氨酸、4-羟基-L-脯氨酸、L-半胱氨酸、L-甲硫氨酸、L-乙硫氨酸、L-羊毛硫氨酸、L-胱硫醚、L-胱氨酸、L-磺基丙氨酸、L-谷氨酸、L-天冬氨酸、S-(羧甲基)-L-半胱氨酸、4-氨基丁酸、L-天冬酰胺、L-谷氨酰胺、氮杂丝氨酸、L-刀豆氨酸、L-瓜氨酸、L-精氨酸、δ-羟基-L-赖氨酸、甲胍基乙酸、L-犬尿氨素、L-组氨酸、1-甲基-L-组氨酸、3-甲基-L-组氨酸、L-色氨酸、放线菌素C1、麦角硫因、蜂毒明肽、血管紧张素I、血管紧张素II和抗痛素等。其中,优选甘氨酸、L-丙氨酸、L-脯氨酸、L-组氨酸、L-赖氨酸、二羟基乙基甘氨酸。
另外,作为可用作有机酸的氨基多元酸,可以举出亚氨基二乙酸、次氮基三乙酸、二亚乙基三胺五乙酸、乙二胺四乙酸、羟基乙基亚氨基二乙酸、次氮基三亚甲基膦酸、乙二胺-N,N,N’,N’-四亚甲基磺酸、1,2-二氨基丙烷四乙酸、乙二醇醚二胺四乙酸、反式环己烷二胺四乙酸、乙二胺邻羟基苯基乙酸、乙二胺二琥珀酸(SS体)、β-丙氨酸二乙酸、N-(2-羧酸乙基)-L-天冬氨酸、N,N’-双(2-羟基苄基)乙二胺-N,N’-二乙酸等。
此外,作为可用作有机酸的羧酸,可以举出甲酸、乙醇酸、丙酸、乙酸、丁酸、戊酸、己酸、草酸、丙二酸、戊二酸、己二酸、苹果酸、琥珀酸、庚二酸、巯基乙酸、乙醛酸、氯乙酸、乙酰甲酸、乙酰乙酸、戊二酸等饱和羧酸、丙烯酸、甲基丙烯酸、丁烯酸、富马酸、马来酸、中康酸、柠康酸、乌头酸等不饱和羧酸、苯甲酸类、甲基苯甲酸、邻苯二甲酸类、萘甲酸类、均苯四甲酸、萘二酸等环状不饱和羧酸等。
作为切削液24所含的氧化剂,可以使用例如过氧化氢、过氧化物、硝酸盐、碘酸盐、高碘酸盐、次氯酸盐、亚氯酸盐、氯酸盐、高氯酸盐、过硫酸盐、重铬酸盐、高锰酸盐、铈酸盐、钒酸盐、臭氧水和银(II)盐、铁(III)盐及其有机络盐等。
另外,可以在切削液24中混合防蚀剂。通过混合防蚀剂,能够防止被加工物11所含的金属的腐蚀(溶出)。作为防蚀剂,优选使用例如在分子内具有3个以上氮原子且具有稠环结构的芳杂环化合物、或者在分子内具有4个以上氮原子的芳杂环化合物。此外,芳香环化合物优选包含羧基、磺基、羟基、烷氧基。具体而言,优选为四唑衍生物、1,2,3-***衍生物以及1,2,4-***衍生物。
作为可用作防蚀剂的四唑衍生物,可以举出:在形成四唑环的氮原子上不具有取代基并且在四唑的5位上导入有选自由磺基、氨基、氨基甲酰基、酰胺基、氨磺酰基以及磺酰胺基组成的组中的取代基、或者被选自由羟基、羧基、磺基、氨基、氨基甲酰基、酰胺基、氨磺酰基以及磺酰胺基组成的组中的至少1种取代基所取代的烷基的物质。
另外,作为可用作防蚀剂的1,2,3-***衍生物,可以举出在形成1,2,3-***环的氮原子上不具有取代基并且在1,2,3-***的4位和/或5位上导入有选自由羟基、羧基、磺基、氨基、氨基甲酰基、酰胺基、氨磺酰基以及磺酰胺基组成的组中的取代基、或者被选自由羟基、羧基、磺基、氨基、氨基甲酰基、酰胺基、氨磺酰基以及磺酰胺基组成的组中的至少1种取代基所取代的烷基或芳基的物质。
另外,作为可用作防蚀剂的1,2,4-***衍生物,可以举出在形成1,2,4-***环的氮原子上不具有取代基并且在1,2,4-***的2位和/或5位上导入有选自由磺基、氨基甲酰基、酰胺基、氨磺酰基以及磺酰胺基组成的组中的取代基、或者被选自由羟基、羧基、磺基、氨基、氨基甲酰基、酰胺基、氨磺酰基以及磺酰胺基组成的组中的至少1种取代基所取代的烷基或芳基的物质。
重复上述步骤,若沿着全部切断预定线13切断被加工物11,则切削步骤终止。
如上所述,在本实施方式的加工方法中,一边对被加工物11供给包含有机酸和氧化剂的切削液24一边执行切削,因此能够一边利用有机酸和氧化剂对层叠体17所含的金属进行改性而使其延展性降低,一边执行切削。由此,即便提高加工的速度,也能够抑制毛刺的产生。即,能够在维持加工品质的同时提高加工速度。
需要说明的是,本发明不限于上述实施方式的记载,可以进行各种变更来实施。例如,可以使激光加工步骤中形成的激光加工槽的宽度比切削步骤中使用的切削刀具的厚度宽。即,可以使切削步骤中使用的切削刀具的厚度比激光加工步骤中形成的激光加工槽的宽度薄。
图5的(A)是用于说明变形例的激光加工步骤的局部截面侧视图,图5的(B)是用于说明变形例的切削步骤的局部截面侧视图。如图5的(A)所示,变形例的激光加工步骤使用与上述实施方式同样的激光加工装置2来进行。
在变形例的激光加工步骤中,首先使卡盘工作台4旋转,使作为对象的切断预定线13的延伸方向与激光加工装置2的加工进给方向对齐。并且,使卡盘工作台4移动,使激光照射单元8的位置在作为对象的切断预定线13的延长线上对齐。
然后,如图5的(A)所示,一边从激光照射单元8朝向被加工物11的露出的表面11a照射激光束8b,一边使卡盘工作台4在加工进给方向上移动。此处,例如使激光束8b会聚到被加工物11的表面11a或内部等。另外,激光束8b的能量(功率、重复频率等)在不切断被加工物11的范围内进行调整。
由此,能够沿着作为对象的切断预定线13照射激光束8b,沿着切断预定线13形成深度未到达层叠体17的激光加工槽19c。需要说明的是,在该激光加工步骤中,为了能够形成宽度比之后的切削步骤中使用的切削刀具的厚度宽的激光加工槽19c,只要调整激光束8b的照射条件即可。重复上述操作,例如若沿着全部切断预定线13形成激光加工槽19c,则变形例的激光加工步骤结束。
在激光加工步骤之后,不进行第二片材粘贴步骤而进行第二保持步骤。变形例的第二保持步骤使用与上述实施方式同样的切削装置12来进行。在第二保持步骤中,首先,使粘贴于被加工物11的背面11b侧的片材21与卡盘工作台14的保持面14a接触,并作用吸引源的负压。并且,利用夹具16固定框架23。由此,被加工物11以表面11a侧向上方露出的状态被保持。
在第二保持步骤之后,进行切削步骤。变形例的切削步骤继续使用切削装置12来进行。其中,在该变形例的切削步骤中,使用厚度比激光加工槽19c的宽度薄的切削刀具20。
首先,使卡盘工作台14旋转,使作为对象的激光加工槽19c(即,切断预定线13)的延伸方向与切削装置2的加工进给方向对齐。并且,使卡盘工作台14和切削单元18相对地移动,使切削刀具20的位置在作为对象的激光加工槽19c的延长线上对齐。然后,使切削刀具20的下端移动至低于层叠体17的下表面的位置。
然后,一边使切削刀具20旋转一边使卡盘工作台14在加工进给方向上移动。并且,从喷嘴22对切削刀具20和被加工物11供给包含有机酸和氧化剂的切削液24。由此,能够使切削刀具20沿着对象的激光加工槽19c切入,对激光加工槽19c的底部进行切削,形成在厚度方向上切断层叠体17以及被加工物11的切口(切缝)19d。
这样,通过使切削液24包含有机酸,能够对层叠体17中的金属进行改性而抑制其延展性。另外,通过使切削液24包含氧化剂,层叠体17中的金属的表面容易发生氧化。其结果是,可充分降低层叠体17中的金属的延展性,提高加工性。
另外,在变形例的切削步骤中,使用了厚度比激光加工槽19c的宽度薄的切削刀具20,因此在激光加工槽19c与切削刀具20之间容易存积切削液24。其结果是,能够将足够量的切削液24供给到层叠体17,能够进一步提高被加工物11的加工性。
需要说明的是,在上述变形例中,未进行第二片材粘贴步骤而进行了第二保持步骤和切削步骤,但也可以在进行第二片材粘贴步骤后进行第二保持步骤、切削步骤。该情况下,利用卡盘工作台14对被加工物11的表面11a侧进行保持,使切削刀具20切入背面11b侧。另外,在上述实施方式中,也可以不进行第二片材粘贴步骤就进行第二保持步骤和切削步骤。
另外,在上述切削步骤中,从夹持切削刀具20的一对喷嘴22供给了切削液24,但对于用于供给切削液24的喷嘴的方式没有特别限制。图6是示出用于供给切削液24的其它方式的喷嘴的侧视图。如图6所示,变形例的切削单元18除了具有切削刀具20和一对喷嘴22以外,还具有配置于切削刀具20的前方(或后方)的喷嘴(喷淋喷嘴)26。
通过从该喷嘴26供给切削液24,容易将切削液24供给到切口(切缝)19b、19d,能够更有效地对层叠体17中的金属进行改性。特别是,如图6所示,若使喷嘴26的喷射口朝向斜下方(例如,切削刀具20的加工点附近),则能够向切口19b、19d供给、填充大量的切削液24,能够更有效地对层叠体17中的金属进行改性,因而是优选的。需要说明的是,图6中使用了一对喷嘴22以及喷嘴26,但也可以仅单独使用喷嘴26。
此外,上述实施方式的结构、方法等可以在不脱离本发明目的的范围内适当变更并实施。
符号说明
11 被加工物
11a 表面
11b 背面
13 切断预定线(间隔道)
15 器件
17 层叠体
19a 激光加工槽
19b 切口(切缝)
19c 激光加工槽
19d 切口(切缝)
21 片材(保护部件)
23 框架
25 片材(保护部件)
27 框架
2 激光加工装置
4 卡盘工作台(第一保持工作台)
4a 保持面
6 夹具
8 激光照射单元
12 切削装置
14 卡盘工作台(第二保持工作台)
14a 保持面
16 夹具
18 切削单元
20 切削刀具
22 喷嘴
24 切削液
26 喷嘴(喷淋喷嘴)
Claims (4)
1.一种加工方法,该加工方法对板状的被加工物进行加工,该板状的被加工物在背面侧形成有包含金属的层叠体,该加工方法的特征在于,
该加工方法具备下述步骤:
保持步骤,利用保持工作台对被加工物的该背面侧进行保持;
激光加工步骤,在实施该保持步骤后,在被加工物的表面沿着该切断预定线照射相对于被加工物具有吸收性的波长的激光束,形成未到达该层叠体的激光加工槽;和切削步骤,在实施该激光加工步骤后,利用切削刀具对该激光加工槽的底部进行切削,将被加工物与该层叠体一起沿着该切断预定线切断,
在该切削步骤中,一边对被加工物供给包含有机酸和氧化剂的切削液,一边执行切削。
2.如权利要求1所述的加工方法,其特征在于,
该加工方法进一步具备保护部件配设步骤,在实施该切削步骤之前,在被加工物的该背面配设保护部件,
该切削步骤在隔着该保护部件对被加工物的该背面侧进行保持的状态下实施。
3.如权利要求2所述的加工方法,其特征在于,
在该切削步骤中,使用厚度比该激光加工槽的宽度薄的该切削刀具。
4.如权利要求1所述的加工方法,其特征在于,
该加工方法进一步具备保护部件配设步骤,在实施该激光加工步骤之后且在实施该切削步骤之前,在被加工物的该表面配设保护部件,
该切削步骤在隔着该保护部件对被加工物的该表面侧进行保持的状态下实施。
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SG10201802546UA (en) | 2018-11-29 |
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US10388534B2 (en) | 2019-08-20 |
JP6890885B2 (ja) | 2021-06-18 |
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