TWI738980B - 板狀被加工物的加工方法 - Google Patents
板狀被加工物的加工方法 Download PDFInfo
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- TWI738980B TWI738980B TW107107220A TW107107220A TWI738980B TW I738980 B TWI738980 B TW I738980B TW 107107220 A TW107107220 A TW 107107220A TW 107107220 A TW107107220 A TW 107107220A TW I738980 B TWI738980 B TW I738980B
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
[課題]提供一種板狀被加工物的加工方法,該加工方法是相較於以往,可將加工速度提升之對在分割預定線上或對應於分割預定線的區域積層有金屬的板狀被加工物進行加工的方法。 [解決手段]一種板狀被加工物的加工方法,該加工方法是對在分割預定線上或對應於分割預定線的區域積層有金屬的板狀被加工物進行加工,並具備:保持步驟,以使該金屬露出的狀態在工作夾台上保持板狀被加工物;第1切割步驟,在實施該保持步驟之後,沿著該分割預定線以第1切割刀切割板狀被加工物,以形成將前述金屬斷開的切割溝;及第2切割步驟,在實施該第1切割步驟之後,以第2切割刀切割該切割溝,以將板狀被加工物完全切斷,在該第1切割步驟中,是一邊對板狀被加工物供給包含有機酸及氧化劑的切割液一邊進行切割。
Description
發明領域 本發明是關於一種板狀被加工物的加工方法,該加工方法是對在分割預定線上或對應於分割預定線的區域積層有金屬的板狀被加工物進行加工。
發明背景 半導體晶圓等之晶圓,具有在以交叉的複數條分割預定線所區劃出的各區域中各自形成有元件的正面,且藉由沿著分割預定線切割晶圓,可將晶圓分割成一個個的元件晶片。
在此種晶圓中存在有下述問題:具有為了良好地形成元件的電氣特性而在背面形成有金屬膜之構成,當以切割刀切割金屬膜時會在切割刀上產生堵塞,且當以產生堵塞的切割刀切割晶圓時,會有在晶圓上產生裂隙、或導致刀片破損之問題。
又,也有為了測量元件的電氣特性,而在分割預定線上積層有TEG(測試元件群,Test Element Group)之晶圓,且當沿著分割預定線切割這種晶圓時,也會有在切割刀產生堵塞之問題。
作為在分割預定線上存在金屬的其他的板狀被加工物,可列舉封裝基板。在此種封裝基板的加工方法中,封裝基板是從形成有複數個電極的電極面側藉由切割刀而被切割,並分割成一個個的封裝。當藉由切割刀從電極表面側切割封裝基板時,會有在切割時在電極產生毛邊之問題。
為了防止切割刀的堵塞,在日本專利特開平9-55573號公報中已提出有一種取代切割刀而用超硬鋸片來切割具備有金屬電極的被加工物的方法。 先前技術文獻 專利文獻
專利文獻1:日本專利特開平9-55573號公報
發明概要 發明欲解決之課題 但是,在專利文獻1所揭示的切割方法中,會有下述問題:由於超硬鋸片與切割刀不同而不會自銳,所以會使鋒利程度立即降低,且刀片更換頻率高而使作業性變差。
另一方面,當以切割刀切割金屬時,除了切割刀的堵塞之外,受到切割刀切割的金屬會產生延展、毛邊、或拖曳等。一般來說,因為加工進給速度越快,隨著切割負載變大而產生的加工熱也會越增加,所以毛邊或拖曳會大量產生。於是,即使為了防止加工品質的惡化而將加工進給速度提升之作法仍是困難的。
本發明是有鑒於上述問題點而作成的發明,其目的在於提供一種板狀被加工物的加工方法,該加工方法是相較於以往,可將加工速度提升之對在分割預定線上或對應於分割預定線的區域積層有金屬的板狀被加工物進行加工的方法。 用以解決課題之手段
根據本發明,可提供一種板狀被加工物的加工方法,該加工方法是對在預定分割線上或對應於預定分割線的區域積層有金屬的板狀被加工物進行加工,該板狀被加工物的加工方法之特徵在於: 具備: 保持步驟,以使該金屬露出的狀態在工作夾台上保持板狀被加工物; 第1切割步驟,在實施該保持步驟之後,沿著該分割預定線以第1切割刀切割板狀被加工物,以形成將前述金屬斷開的切割溝;及 第2切割步驟,在實施該第1切割步驟之後,以第2切割刀切割該切割溝,以將板狀被加工物完全切斷, 在該第1切割步驟中,是一邊對板狀被加工物供給包含有機酸及氧化劑的切割液一邊進行切割。 發明效果
根據本發明之加工方法,由於是以切割刀分成兩次在厚度方向上進行切割,因此表面上是讓要切割之被加工物的厚度變薄,相較於一次就將被加工物完全切斷的情況,可以提升加工速度。
再者,由於一邊供給包含有機酸與氧化劑的切割液一邊進行切割,因此可藉由切割液中所含的有機酸將金屬改質而壓抑延展性、且讓毛邊的產生受到抑制。藉由切割液中所含的氧化劑,形成在金屬表面的膜質產生改變,金屬即失去延展性且變得容易被切割,可提升加工性。
用以實施發明之形態 以下,參照圖式詳細地說明本發明的實施形態。參照圖1,所示為成為本發明的加工方法的對象之封裝基板的一個例子的平面圖。封裝基板2具有例如矩形形狀的基底基板4,且基底基板4具有形成有複數個電極12的電極面4a、及與電極面4a相反側的密封面4b。
在本實施形態中,在基底基板4之由外周剩餘區域5及非元件區域5a所圍繞的區域中,存在三個元件區域6a、6b、6c。基底基板4是由例如金屬框架所構成。
在各元件區域6a、6b、6c中,界定有由縱橫地設置成互相正交的第1及第2分割預定線8a、8b所區劃出的複數個元件搭載部10,且於一個個的元件搭載部10中形成有複數個電極12。
各電極12彼此是藉由在基底基板4上被塑模的樹脂而被絕緣。藉由切割第1分割預定線8a及第2分割預定線8b,可在其兩側出現各個元件的電極12。
在基底基板4的元件搭載部10分別組裝有元件,且可將各元件的電極及基底基板4的電極12以例如金屬線來連接。如圖2所示,在各元件區域6a、6b、6c的背面,即在基底基板4的密封面4b上形成有樹脂密封部18,且各元件是被樹脂所密封。
接著,參照圖3至圖7,就有關於本發明實施形態之板狀被加工物的加工方法來說明。在本實施形態中,就採用了封裝基板2作為板狀被加工物的例子來說明。
首先,如圖3所示地實施保持步驟,該保持步驟是在已使形成在封裝基板2的分割預定線8a、8b上的電極12露出的狀態下,隔著治具台20以未圖示的切割裝置的工作夾台來吸引保持封裝基板2。
治具台20,是將透過切割裝置的工作夾台而連接到吸引源的吸引路22、及於封裝基板2的全切(full cut)時供切割刀的前端退避的退刀溝24對應於封裝基板2之分割預定線8a、8b來形成。
當將封裝基板2之分割預定線8a、8b與退刀溝24對準來將封裝基板2載置於治具台20上,且透過切割裝置的工作夾台將吸引路22連接到吸引源時,可將負壓導入吸引路22而將封裝基板2隔著治具台20吸引保持於工作夾台上。
在實施保持步驟之後,實施第1切割步驟,該第1切割步驟是沿著分割預定線8a、8b以切割刀26切割封裝基板2而形成將電極12斷開的切割溝32。
在此第1切割步驟中,如圖4所示,是一邊從配置在切割刀26的兩側的切割液供給噴嘴28供給包含有機酸與氧化劑的切割液30一邊較淺地切割封裝基板2以形成將電極12斷開的切割溝32。
可以作為有機酸而使用之胺基酸,可列舉出甘胺酸、二羥乙基甘胺酸、甘胺醯甘胺酸、羥乙基甘胺酸、N-甲基甘胺酸、β-丙胺酸、L-丙胺酸、L-2-胺基丁酸、L-正纈胺酸、L-纈胺酸、L-白胺酸、L-正白胺酸、L-別異白胺酸、L-異白胺酸、L-***酸、L-脯胺酸、肌胺酸、L-鳥胺酸、L-離胺酸、牛磺酸、L-絲胺酸、L-蘇胺酸、L-別蘇胺酸、L-高絲胺酸、L-甲狀腺素、L-酪胺酸、3,5-二碘-L-酪胺酸、β-(3,4-二羥基苯基)-L-丙胺酸、4-羥基-L-脯胺酸、L-半胱胺酸、L-甲硫胺酸、L-乙硫胺酸、L-羊毛硫胺酸、L-胱硫醚、L-胱胺酸、L-氧化半胱胺酸、L-麩胺酸、L-天冬胺酸、S-(羧甲基)-L-半胱胺酸、4-胺基丁酸、L-天冬醯胺酸、L-麩醯胺酸、氮絲胺酸、L-刀豆胺酸、L-瓜胺酸、L-精胺酸、δ-羥基-L-離胺酸、肌酸、L-犬尿胺酸、L-組胺酸、1-甲基-L-組胺酸、3-甲基-L-組胺酸、L-色胺酸、放線菌黴素C1、麥角硫鹼(ergothioneine)、蜂毒明肽(apamin)、第一型血管收縮素(angiotensin I)、第二型血管收縮素(angiotensin II)及抗痛素(antipain)等。其中,尤以甘胺酸、L-丙胺酸、L-脯胺酸、L-組胺酸、L-離胺酸、以及二羥乙基甘胺酸為較佳。
此外,可以作為有機酸而使用的胺基多元酸(amino polyacid),可列舉出亞胺二乙酸、氮基三乙酸、二乙三胺五乙酸、乙二胺四乙酸、羥乙基亞胺二乙酸、氮基三亞甲基膦酸(nitrilotris(methylene)phosphonic acid)、乙二胺-N,N,N’,N’-四亞甲基磺酸、1,2-二胺丙烷四乙酸、二醇醚二胺四乙酸、反式環己烷二胺四乙酸、乙二胺鄰羥基苯基乙酸、乙二胺二琥珀酸(SS體)、β-丙氨酸二乙酸、N-(2-羧酸根合乙基)-L-天冬胺酸、 N,N’-雙(2-羥基芐基)乙二胺-N,N’-二乙酸等。
此外,可以作為有機酸而使用之羧酸,可列舉出甲酸、乙醇酸、丙酸、乙酸、丁酸、戊酸、己酸、草酸、丙二酸、戊二酸、己二酸、蘋果酸、琥珀酸、庚二酸、氫硫乙酸、乙醛酸、氯乙酸、丙酮酸、乙醯乙酸、戊二酸等之飽和羧酸、或丙烯酸、甲基丙烯酸、巴豆酸、反丁烯二酸、順丁烯二酸、中康酸、檸康酸、烏頭酸等之不飽和羧酸、安息香酸類、甲苯甲酸、鄰苯二甲酸類、萘甲酸類、焦蜜石酸、以及萘二甲酸等之環狀不飽和羧酸等。
作為氧化劑,可以使用例如,過氧化氫、過氧化物、硝酸鹽、碘酸鹽、過碘酸鹽、次氯酸鹽、亞氯酸鹽、氯酸鹽、過氯酸鹽、過硫酸鹽、重鉻酸鹽、過錳酸鹽、鈰酸鹽、釩酸鹽、臭氧水及銀(II)鹽、鐵(III)鹽、或其有機錯鹽等。
又,亦可在切割液31中混合防蝕劑。藉由混合防蝕劑,可防止封裝基板2所含有的金屬的腐蝕(溶出)。作為防蝕劑,較理想的是使用例如,分子內具有3個以上的氮原子,且具有稠環構造之芳香雜環化合物、或分子內具有4個以上的氮原子之芳香雜環化合物。此外,芳環化合物宜包含羧基、磺酸基、羥基、烷氧基。具體而言,宜為四唑衍生物、1,2,3-***衍生物、以及1,2,4-***衍生物。
可以作為防蝕劑而使用的四唑衍生物,可列舉出在形成四唑環之氮原子上不具有取代基,且在四唑的第5位置上導入以下的基之四唑衍生物:選自於由磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的取代基、或是用選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的至少1個取代基所取代之烷基。
又,可以作為防蝕劑而使用的1,2,3-***衍生物,可列舉出在形成1,2,3-***環之氮原子上不具有取代基,且在1,2,3-***的第4位置及/或第5位置上導入以下的基之***衍生物:選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的取代基、或是用選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的至少1個取代基所取代的烷基或芳基。
又,可以作為防蝕劑而使用的1,2,4-***衍生物,可列舉出在形成1,2,4-***環之氮原子上不具有取代基,且在1,2,4-***的第2位置及/或第5位置上導入以下的基之***衍生物:選自於由磺酸基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的取代基、或是用選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的至少1個取代基所取代的烷基或芳基。
由於第1切割步驟是一邊從切割液供給噴嘴28供給包含有機酸與氧化劑的切割液30一邊實施,因此可藉由包含於切割液的有機酸將形成電極12的金屬改質,以壓抑延展性,且讓毛邊的產生受到抑制。此外,可以藉由氧化劑使形成於電極表面的膜質改變,電極12即失去延展性且變得容易被切割,可促進加工性。
在此,參照圖6和圖7,並以一邊供給純水一邊實施第1切割步驟的情況、及一邊供給上述之切割液一邊實施第1切割步驟的情況,來考察封裝基板2之電極12的延伸會到什麼程度。
在實驗中使用之封裝基板2的相鄰的電極12之間的距離為100μm,一邊供給純水一邊實施第1切割步驟時之加工進給速度為40mm/秒,一邊供給包含有機酸與氧化劑之切割液30一邊實施第1切割步驟時之加工進給速度為100mm/秒。
圖6(A)是在一邊供給純水一邊實施第1切割步驟的情況下之沿著分割預定線8a、8b被切斷加工的封裝基板2的截面圖,圖6(B)是一邊供給包含有機酸與氧化劑之切割液30一邊對封裝基板2的分割預定線8a、8b進行切割加工的情況下之截面圖。
如參照圖6(A)即清楚可知地,在一邊供給純水一邊實施第1切割步驟的情況下,電極12的延展較大,相鄰的電極12彼此短路之處也一看就知道。
另一方面,在圖6(B)所示之一邊供給切割液一邊實施第1切割步驟的情況下,可觀察到電極12的延展已明顯地變小。這被認為是藉由包含於切割液30的有機酸將金屬改質而壓抑延展性,且連毛邊的產生也受到抑制之故。
接著,就圖7的圖表進行考察。圖7的圖表所顯示的是,對封裝基板2之相鄰的電極12之間的距離為100μm的電極一邊供給純水或包含有機酸與氧化劑的切割液30,一邊沿著分割預定線8a切割時的平均端子間的距離。
純水供給時的第1切割步驟的加工進給速度為40mm/秒,一邊供給包含有機酸與氧化劑的切割液30一邊實施第1切割步驟時的加工進給速度為100mm/秒。
如參照圖7的圖表即清楚可知的,一邊供給純水一邊實施第1切割步驟的情況下,切割後之相鄰的平均端子間的距離為38.0μm,一邊供給切割液30一邊實施第1切割步驟的情況下,切割後之相鄰的平均端子間的距離為80.8μm。
所謂平均端子間距離較短意指藉由切割使端子12大幅地延伸之情形,所謂平均端子間距離較長意指由切割所形成之端子12的延伸較小之情形。
此外,由於當一邊供給切割液30一邊實施第1切割步驟時,會藉由切割液30中的氧化劑使形成於金屬表面的膜質改變,金屬即失去延展性且變得容易切割,因此可以將加工進給速度加速到100mm/秒,且可以看出加工進給速度從一邊供給純水一邊實施第1切割步驟時的加工進給速度40mm/秒中明顯提升之情形。
在本發明實施形態的加工方法中,會實施第2切割步驟,該第2切割步驟是在實施第1切割步驟之後,以第2切割刀切割切割溝34而將封裝基板2完全切斷。此第2切割步驟的第1實施形態,如圖5(A)所示,是以與在第1切割步驟所使用的同一切割刀26來通過切割溝34並切入到治具台20的退刀溝24為止,而將封裝基板2完全切斷。
在第2切割步驟的第2實施形態中,如圖5(B)所示,是使用比在第1切割步驟中所使用的切割刀26更薄的切割刀26A來實施第2切割步驟。在此種情況下,是以切割刀26A於切割溝34的中央部分切入到治具台20的退刀溝24為止,而將封裝基板2完全切斷。
無論在哪一種實施形態中,都可以藉由將切割刀26、26A分度進給,並且將於第1方向上伸長的所有的分割預定線8a完全切斷之後,將保持治具台20的切割裝置之工作夾台旋轉90°,然後將於第2方向上伸長的所有的分割預定線8b完全切斷,而將封裝基板2分割成一個個的CSP(晶片尺寸封裝,Chip Size Package)。
在上述之實施形態中,已就將本發明的加工方法適用於封裝基板2的例子進行說明,但是本發明的加工方法並非限定於此,對例如積層有作為背面電極之厚度數μm的導體膜(由Ti、Ni、Au等所構成的多層金屬膜)的晶圓、於正面的分割預定線上形成有TEG之晶圓等作為板狀被加工物,也可同樣地適用。
此外,在上述之第1切割步驟中,雖然是從包夾切割刀26的一對噴嘴28來供給切割液30,但對於用於供給切割液30的噴嘴之態様並無特別的限制。圖8是顯示用於供給切割液30的另外的態様的噴嘴之側視圖。如圖8所示,有關於變形例的切割單元25,是除了切割刀26及一對噴嘴28以外,還具有配置在切割刀26的切割方向前方的噴嘴(沖淋噴嘴(shower nozzle))38。
藉由從此噴嘴38供給切割液30,可變得容易對電極12部分供給切割液30,而可將形成電極12的金屬改質以壓抑延展性,並抑制毛邊的產生。
特別是如圖8所示,當將噴嘴38的噴射口朝向斜下方(例如,切割刀26的加工點附近)時,會變得容易對電極12供給切割液30,而能夠有效地將形成電極12的金屬改質。再者,在圖8中,雖然是將噴嘴38與一對噴嘴28一起使用,但亦可僅單獨使用噴嘴38。
2‧‧‧封裝基板4‧‧‧基底基板4a‧‧‧電極面4b‧‧‧密封面5‧‧‧外周剩餘區域5a‧‧‧非元件區域6a、6b、6c‧‧‧元件區域8a、8b‧‧‧分割預定線10‧‧‧元件搭載部12‧‧‧電極18‧‧‧樹脂密封部20‧‧‧治具台22‧‧‧吸引路24‧‧‧退刀溝25‧‧‧切割單元26、26A‧‧‧切割刀28‧‧‧切割液供給噴嘴30‧‧‧切割液32、34、36‧‧‧切割溝38‧‧‧噴嘴(噴淋噴嘴)
圖1是封裝基板之正面圖。 圖2是封裝基板之背面圖。 圖3是顯示保持步驟的放大截面圖。 圖4是顯示第1切割步驟的放大截面圖。 圖5(A)是顯示使用與在第1切割步驟中所使用的切割刀相同的切割刀所實施的第2切割步驟的放大截面圖,圖5(B)是顯示使用較薄的切割刀所實施的第2切割步驟的放大截面圖。 圖6(A)是一邊供給純水一邊實施第1切割步驟後的封裝件基板之電極部分的截面圖,圖6(B)是一邊供給包含有機酸與氧化劑的切割液一邊實施第1切割步驟後的電極部分的截面圖。 圖7是顯示一邊供給水或切割液一邊實施第1切割步驟後的平均端子電極間距離的圖表。 圖8是顯示在第1切割步驟中用於供給切割液的另外的態樣的噴嘴之側視圖。
2‧‧‧封裝基板
8a‧‧‧分割預定線
12‧‧‧電極
20‧‧‧治具台
22‧‧‧吸引路
24‧‧‧退刀溝
26‧‧‧切割刀
28‧‧‧切割液供給噴嘴
30‧‧‧切割液
32‧‧‧切割溝
Claims (18)
- 一種板狀被加工物的加工方法,對一板狀被加工物進行加工,前述板狀被加工物具有一分割預定線及形成在前述分割預定線上或對應於前述分割預定線的一區域之一金屬,前述板狀被加工物的加工方法包括:一保持步驟,以使前述金屬露出的狀態在一工作夾台上保持前述板狀被加工物;一第1切割步驟,在實施前述保持步驟之後,使用一第1切割刀沿著前述分割預定線切割前述板狀被加工物,以形成將前述金屬分割的一第1切割溝;及一第2切割步驟,在實施前述第1切割步驟之後,使用一第2切割刀沿著前述第1切割溝切割前述板狀被加工物,以形成一第2切割溝來將前述板狀被加工物完全切斷,且前述第2切割刀在前述第2切割步驟的期間與前述金屬接觸,前述第1切割步驟包含對前述板狀被加工物供給包含一有機酸與一氧化劑的一切割液的步驟。
- 如請求項1之板狀被加工物的加工方法,其中前述有機酸包括一胺基酸。
- 如請求項2之板狀被加工物的加工方法,其中前述胺基酸是選自由甘胺酸、二羥乙基甘胺酸、甘胺醯甘胺酸、羥乙基甘胺酸、N-甲基甘胺酸、β-丙胺酸、L-丙胺酸、L-2-胺基丁酸、L-正纈胺酸、L-纈胺酸、L-白胺酸、L-正白胺酸、L-別異白胺酸、L-異白胺酸、L- ***酸、L-脯胺酸、肌胺酸、L-鳥胺酸、L-離胺酸、牛磺酸、L-絲胺酸、L-蘇胺酸、L-別蘇胺酸、L-高絲胺酸、L-甲狀腺素、L-酪胺酸、3,5-二碘-L-酪胺酸、β-(3,4-二羥基苯基)-L-丙胺酸、4-羥基-L-脯胺酸、L-半胱胺酸、L-甲硫胺酸、L-乙硫胺酸、L-羊毛硫胺酸、L-胱硫醚、L-胱胺酸、L-氧化半胱胺酸、L-麩胺酸、L-天冬胺酸、S-(羧甲基)-L-半胱胺酸、4-胺基丁酸、L-天冬醯胺酸、L-麩醯胺酸、氮絲胺酸、L-刀豆胺酸、L-瓜胺酸、L-精胺酸、δ-羥基-L-離胺酸、肌酸、L-犬尿胺酸、L-組胺酸、1-甲基-L-組胺酸、3-甲基-L-組胺酸、L-色胺酸、放線菌黴素C1、麥角硫鹼(ergothioneine)、蜂毒明肽(apamin)、第一型血管收縮素(angiotensin I)、第二型血管收縮素(angiotensin II)及抗痛素(antipain)所組成的群組。
- 如請求項1之板狀被加工物的加工方法,其中前述有機酸包括一胺基多元酸。
- 如請求項4之板狀被加工物的加工方法,其中前述胺基多元酸是選自由亞胺二乙酸、氮基三乙酸、二乙三胺五乙酸、乙二胺四乙酸、羥乙基亞胺二乙酸、氮基三亞甲基膦酸(nitrilotris(methylene)phosphonic acid)、乙二胺-N,N,N’,N’-四亞甲基磺酸、1,2-二胺丙烷四乙酸、二醇醚二胺四乙酸、反式環己烷二胺四乙酸、乙二胺鄰羥基苯基乙酸、乙二胺二琥珀酸(SS體)、β-丙氨酸二乙酸、N-(2-羧酸根合乙基)-L-天冬胺酸及N,N’-雙(2-羥基芐基)乙二胺-N,N’-二乙酸所組成的群組。
- 如請求項1之板狀被加工物的加工方法,其中前述氧化劑是選自由過氧化氫、過氧化物、硝酸鹽、碘酸鹽、過碘酸鹽、次氯酸鹽、亞氯酸鹽、氯酸鹽、過氯酸鹽、過硫酸鹽、重鉻酸鹽、過錳酸鹽、鈰酸鹽、釩酸鹽、臭氧水、銀(II)鹽、鐵(III)鹽及其等的有機錯鹽所組成的群組。
- 如請求項1之板狀被加工物的加工方法,其中前述氧化劑是選自由過氧化氫、過氧化物、硝酸鹽、碘酸鹽、過碘酸鹽、次氯酸鹽、亞氯酸鹽、氯酸鹽、過氯酸鹽、過硫酸鹽、重鉻酸鹽、過錳酸鹽、鈰酸鹽、釩酸鹽、銀(II)鹽、鐵(III)鹽及其等的有機錯鹽所組成的群組。
- 如請求項1之板狀被加工物的加工方法,其中前述第1切割步驟是以100mm/秒的進給速度來實施。
- 一種板狀被加工物的加工方法,對一板狀被加工物進行加工,前述板狀被加工物具有一分割預定線及形成在前述分割預定線上或對應於前述分割預定線的一區域之一金屬,前述板狀被加工物的加工方法包括:一保持步驟,以使前述金屬露出的狀態在一工作夾台上保持前述板狀被加工物;一第1切割步驟,在實施前述保持步驟之後,使用一第1切割刀沿著前述分割預定線切割前述板狀被加工物,以形成將前述金屬分割的一第1切割溝;及一第2切割步驟,在實施前述第1切割步驟之後,使用一第2切割刀沿著前述第1切割溝切割前述板狀被加工 物,以形成一第2切割溝來將前述板狀被加工物完全切斷,且前述第2切割刀在前述第2切割步驟的期間與前述金屬接觸,前述第1切割步驟包含對前述板狀被加工物供給包含一有機酸與一氧化劑的一切割液的步驟,前述第2切割刀與前述第1切割刀相同。
- 如請求項9之板狀被加工物的加工方法,其中前述第1切割步驟是以100mm/秒的進給速度來實施。
- 一種板狀被加工物的加工方法,對一板狀被加工物進行加工,前述板狀被加工物具有一分割預定線及形成在前述分割預定線上或對應於前述分割預定線的一區域之一金屬,前述板狀被加工物的加工方法包括:一保持步驟,以使前述金屬露出的狀態在一工作夾台上保持前述板狀被加工物;一第1切割步驟,在實施前述保持步驟之後,使用一第1切割刀沿著前述分割預定線切割前述板狀被加工物,以形成將前述金屬分割的一第1切割溝,且前述第1切割溝是以一固定寬度延伸並貫通前述金屬;及一第2切割步驟,在實施前述第1切割步驟之後,使用一第2切割刀沿著前述第1切割溝切割前述板狀被加工物,以形成一第2切割溝來將前述板狀被加工物完全切斷,前述第1切割步驟包含對前述板狀被加工物供給包含一有機酸與一氧化劑的一切割液的步驟,前述氧化劑改變前述金屬的膜質,且前述有機酸將前 述金屬改質,以抑制其延展性,前述第2切割刀具有比前述第1切割刀更薄的厚度。
- 如請求項11之板狀被加工物的加工方法,其中前述有機酸包括一胺基酸。
- 如請求項12之板狀被加工物的加工方法,其中前述胺基酸是選自由甘胺酸、二羥乙基甘胺酸、甘胺醯甘胺酸、羥乙基甘胺酸、N-甲基甘胺酸、β-丙胺酸、L-丙胺酸、L-2-胺基丁酸、L-正纈胺酸、L-纈胺酸、L-白胺酸、L-正白胺酸、L-別異白胺酸、L-異白胺酸、L-***酸、L-脯胺酸、肌胺酸、L-鳥胺酸、L-離胺酸、牛磺酸、L-絲胺酸、L-蘇胺酸、L-別蘇胺酸、L-高絲胺酸、L-甲狀腺素、L-酪胺酸、3,5-二碘-L-酪胺酸、β-(3,4-二羥基苯基)-L-丙胺酸、4-羥基-L-脯胺酸、L-半胱胺酸、L-甲硫胺酸、L-乙硫胺酸、L-羊毛硫胺酸、L-胱硫醚、L-胱胺酸、L-氧化半胱胺酸、L-麩胺酸、L-天冬胺酸、S-(羧甲基)-L-半胱胺酸、4-胺基丁酸、L-天冬醯胺酸、L-麩醯胺酸、氮絲胺酸、L-刀豆胺酸、L-瓜胺酸、L-精胺酸、δ-羥基-L-離胺酸、肌酸、L-犬尿胺酸、L-組胺酸、1-甲基-L-組胺酸、3-甲基-L-組胺酸、L-色胺酸、放線菌黴素C1、麥角硫鹼(ergothioneine)、蜂毒明肽(apamin)、第一型血管收縮素(angiotensin I)、第二型血管收縮素(angiotensin II)及抗痛素(antipain)等所組成的群組。
- 如請求項11之板狀被加工物的加工方法,其中前述有機酸包含一胺基多元酸。
- 如請求項14之板狀被加工物的加工方法,其中前述胺基多元酸是選自由亞胺二乙酸、氮基三乙酸、二乙三胺五乙酸、乙二胺四乙酸、羥乙基亞胺二乙酸、氮基三亞甲基膦酸(nitrilotris(methylene)phosphonic acid)、乙二胺-N,N,N’,N’-四亞甲基磺酸、1,2-二胺丙烷四乙酸、二醇醚二胺四乙酸、反式環己烷二胺四乙酸、乙二胺鄰羥基苯基乙酸、乙二胺二琥珀酸(SS體)、β-丙氨酸二乙酸、N-(2-羧酸根合乙基)-L-天冬胺酸及N,N’-雙(2-羥基芐基)乙二胺-N,N’-二乙酸所組成的群組。
- 如請求項11之板狀被加工物的加工方法,其中前述氧化劑是選自由過氧化氫、過氧化物、硝酸鹽、碘酸鹽、過碘酸鹽、次氯酸鹽、亞氯酸鹽、氯酸鹽、過氯酸鹽、過硫酸鹽、重鉻酸鹽、過錳酸鹽、鈰酸鹽、釩酸鹽、臭氧水、銀(II)鹽、鐵(III)鹽及其等的有機錯鹽所組成的群組。
- 如請求項11之板狀被加工物的加工方法,其中前述氧化劑是選自由過氧化氫、過氧化物、硝酸鹽、碘酸鹽、過碘酸鹽、次氯酸鹽、亞氯酸鹽、氯酸鹽、過氯酸鹽、過硫酸鹽、重鉻酸鹽、過錳酸鹽、鈰酸鹽、釩酸鹽、銀(II)鹽、鐵(III)鹽及其等的有機錯鹽所組成的群組。
- 如請求項11之板狀被加工物的加工方法,其中前述第1切割步驟是以100mm/秒的進給速度來實施。
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JP2017074246A JP2018181899A (ja) | 2017-04-04 | 2017-04-04 | 板状被加工物の加工方法 |
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- 2018-03-29 US US15/940,411 patent/US10607865B2/en active Active
- 2018-04-02 KR KR1020180038013A patent/KR20180112701A/ko not_active Application Discontinuation
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US10607865B2 (en) | 2020-03-31 |
CN108695146A (zh) | 2018-10-23 |
KR20180112701A (ko) | 2018-10-12 |
JP2018181899A (ja) | 2018-11-15 |
SG10201802536TA (en) | 2018-11-29 |
US20180286708A1 (en) | 2018-10-04 |
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DE102018205032A1 (de) | 2018-10-04 |
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