CN108400094A - 屏蔽栅场效应晶体管及其制造方法(锤形) - Google Patents
屏蔽栅场效应晶体管及其制造方法(锤形) Download PDFInfo
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- CN108400094A CN108400094A CN201810351438.2A CN201810351438A CN108400094A CN 108400094 A CN108400094 A CN 108400094A CN 201810351438 A CN201810351438 A CN 201810351438A CN 108400094 A CN108400094 A CN 108400094A
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- effect transistor
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- 230000005669 field effect Effects 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 18
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 26
- 230000003647 oxidation Effects 0.000 claims description 13
- 238000007254 oxidation reaction Methods 0.000 claims description 13
- 238000002347 injection Methods 0.000 claims description 10
- 239000007924 injection Substances 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 230000007547 defect Effects 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000011229 interlayer Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 12
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 16
- 230000015556 catabolic process Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
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CN201810351438.2A CN108400094B (zh) | 2018-04-19 | 2018-04-19 | 屏蔽栅场效应晶体管及其制造方法(锤形) |
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CN201810351438.2A CN108400094B (zh) | 2018-04-19 | 2018-04-19 | 屏蔽栅场效应晶体管及其制造方法(锤形) |
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CN108400094A true CN108400094A (zh) | 2018-08-14 |
CN108400094B CN108400094B (zh) | 2020-12-25 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110993690A (zh) * | 2019-11-15 | 2020-04-10 | 杰华特微电子(杭州)有限公司 | 沟槽型mosfet器件及其制造方法 |
CN113327858A (zh) * | 2020-07-15 | 2021-08-31 | 上海先进半导体制造有限公司 | 屏蔽栅场效应晶体管及其制造方法 |
CN114068683A (zh) * | 2022-01-17 | 2022-02-18 | 深圳市威兆半导体有限公司 | 屏蔽栅极金氧半场效晶体管元胞结构、晶体管及制造方法 |
CN114999916A (zh) * | 2022-05-05 | 2022-09-02 | 上海朕芯微电子科技有限公司 | 一种屏蔽栅mosfet(sgt)的制作方法 |
CN115985954A (zh) * | 2023-01-04 | 2023-04-18 | 深圳吉华微特电子有限公司 | 一种改善sgt产品多晶形貌的制造方法 |
CN117334579A (zh) * | 2023-10-25 | 2024-01-02 | 中晶新源(上海)半导体有限公司 | 一种屏蔽栅功率半导体器件及其制作方法 |
Citations (7)
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CN100437942C (zh) * | 2002-05-31 | 2008-11-26 | Nxp股份有限公司 | 沟槽栅半导体器件及制造方法 |
CN103094118A (zh) * | 2011-11-01 | 2013-05-08 | 上海华虹Nec电子有限公司 | 制作双层栅沟槽mos的工艺方法 |
US20140284710A1 (en) * | 2012-07-16 | 2014-09-25 | Semiconductor Components Industries, Llc | Insulated gate semiconductor device having shield electrode structure |
CN105931969A (zh) * | 2016-05-31 | 2016-09-07 | 上海华虹宏力半导体制造有限公司 | 终端结构的制造方法 |
CN106057674A (zh) * | 2016-05-31 | 2016-10-26 | 上海华虹宏力半导体制造有限公司 | 屏蔽栅沟槽mosfet的制造方法 |
CN107710418A (zh) * | 2015-05-07 | 2018-02-16 | 德克萨斯仪器股份有限公司 | 多屏蔽沟槽栅极场效应晶体管 |
CN107799585A (zh) * | 2017-12-01 | 2018-03-13 | 苏州凤凰芯电子科技有限公司 | 一种具有渐变深槽的屏蔽栅mos结构 |
-
2018
- 2018-04-19 CN CN201810351438.2A patent/CN108400094B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100437942C (zh) * | 2002-05-31 | 2008-11-26 | Nxp股份有限公司 | 沟槽栅半导体器件及制造方法 |
CN103094118A (zh) * | 2011-11-01 | 2013-05-08 | 上海华虹Nec电子有限公司 | 制作双层栅沟槽mos的工艺方法 |
US20140284710A1 (en) * | 2012-07-16 | 2014-09-25 | Semiconductor Components Industries, Llc | Insulated gate semiconductor device having shield electrode structure |
CN107710418A (zh) * | 2015-05-07 | 2018-02-16 | 德克萨斯仪器股份有限公司 | 多屏蔽沟槽栅极场效应晶体管 |
CN105931969A (zh) * | 2016-05-31 | 2016-09-07 | 上海华虹宏力半导体制造有限公司 | 终端结构的制造方法 |
CN106057674A (zh) * | 2016-05-31 | 2016-10-26 | 上海华虹宏力半导体制造有限公司 | 屏蔽栅沟槽mosfet的制造方法 |
CN107799585A (zh) * | 2017-12-01 | 2018-03-13 | 苏州凤凰芯电子科技有限公司 | 一种具有渐变深槽的屏蔽栅mos结构 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110993690A (zh) * | 2019-11-15 | 2020-04-10 | 杰华特微电子(杭州)有限公司 | 沟槽型mosfet器件及其制造方法 |
CN113327858A (zh) * | 2020-07-15 | 2021-08-31 | 上海先进半导体制造有限公司 | 屏蔽栅场效应晶体管及其制造方法 |
CN113327858B (zh) * | 2020-07-15 | 2024-02-06 | 上海积塔半导体有限公司 | 屏蔽栅场效应晶体管及其制造方法 |
CN114068683A (zh) * | 2022-01-17 | 2022-02-18 | 深圳市威兆半导体有限公司 | 屏蔽栅极金氧半场效晶体管元胞结构、晶体管及制造方法 |
CN114999916A (zh) * | 2022-05-05 | 2022-09-02 | 上海朕芯微电子科技有限公司 | 一种屏蔽栅mosfet(sgt)的制作方法 |
CN115985954A (zh) * | 2023-01-04 | 2023-04-18 | 深圳吉华微特电子有限公司 | 一种改善sgt产品多晶形貌的制造方法 |
CN117334579A (zh) * | 2023-10-25 | 2024-01-02 | 中晶新源(上海)半导体有限公司 | 一种屏蔽栅功率半导体器件及其制作方法 |
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