CN100437942C - 沟槽栅半导体器件及制造方法 - Google Patents
沟槽栅半导体器件及制造方法 Download PDFInfo
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- CN100437942C CN100437942C CNB038121794A CN03812179A CN100437942C CN 100437942 C CN100437942 C CN 100437942C CN B038121794 A CNB038121794 A CN B038121794A CN 03812179 A CN03812179 A CN 03812179A CN 100437942 C CN100437942 C CN 100437942C
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- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
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- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
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- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
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- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0212564.9A GB0212564D0 (en) | 2002-05-31 | 2002-05-31 | Trench-gate semiconductor device |
GB0212564.9 | 2002-05-31 | ||
GB0303162.2 | 2003-02-12 | ||
GBGB0303162.2A GB0303162D0 (en) | 2002-05-31 | 2003-02-12 | Trench-gate semiconductor devices and the manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1656610A CN1656610A (zh) | 2005-08-17 |
CN100437942C true CN100437942C (zh) | 2008-11-26 |
Family
ID=29713388
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038121794A Expired - Fee Related CN100437942C (zh) | 2002-05-31 | 2003-05-21 | 沟槽栅半导体器件及制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7232726B2 (zh) |
EP (1) | EP1514300A1 (zh) |
JP (1) | JP2005528796A (zh) |
CN (1) | CN100437942C (zh) |
AU (1) | AU2003232995A1 (zh) |
WO (1) | WO2003103036A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108400094A (zh) * | 2018-04-19 | 2018-08-14 | 张帅 | 屏蔽栅场效应晶体管及其制造方法(锤形) |
CN109065625A (zh) * | 2018-07-25 | 2018-12-21 | 七色堇电子科技(上海)有限公司 | 一种沟槽型mos晶体管、其制备方法和包含其的电子装置 |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2003228073A1 (en) * | 2002-05-31 | 2003-12-19 | Koninklijke Philips Electronics N.V. | Trench-gate semiconductor device,corresponding module and apparatus ,and method of operating the device |
US7652326B2 (en) | 2003-05-20 | 2010-01-26 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
US7183610B2 (en) * | 2004-04-30 | 2007-02-27 | Siliconix Incorporated | Super trench MOSFET including buried source electrode and method of fabricating the same |
US7573078B2 (en) * | 2004-05-11 | 2009-08-11 | Cree, Inc. | Wide bandgap transistors with multiple field plates |
US7550783B2 (en) * | 2004-05-11 | 2009-06-23 | Cree, Inc. | Wide bandgap HEMTs with source connected field plates |
US9773877B2 (en) * | 2004-05-13 | 2017-09-26 | Cree, Inc. | Wide bandgap field effect transistors with source connected field plates |
JP5259920B2 (ja) | 2004-08-04 | 2013-08-07 | ローム株式会社 | 半導体装置およびその製造方法 |
JP2006066573A (ja) * | 2004-08-26 | 2006-03-09 | Seiko Epson Corp | 半導体装置および半導体装置の製造方法 |
DE112006000522T5 (de) | 2005-03-03 | 2008-01-10 | Fuji Electric Holdings Co., Ltd., Kawasaki | Halbleiterbauelement und Verfahren zu dessen Herstellung |
US11791385B2 (en) * | 2005-03-11 | 2023-10-17 | Wolfspeed, Inc. | Wide bandgap transistors with gate-source field plates |
CN101542731B (zh) * | 2005-05-26 | 2012-07-11 | 飞兆半导体公司 | 沟槽栅场效应晶体管及其制造方法 |
DE112006001516T5 (de) | 2005-06-10 | 2008-04-17 | Fairchild Semiconductor Corp. | Feldeffekttransistor mit Ladungsgleichgewicht |
TWI400757B (zh) * | 2005-06-29 | 2013-07-01 | Fairchild Semiconductor | 形成遮蔽閘極場效應電晶體之方法 |
KR100608386B1 (ko) | 2005-06-30 | 2006-08-08 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
WO2007043170A1 (ja) * | 2005-10-12 | 2007-04-19 | Fuji Electric Holdings Co., Ltd. | Soiトレンチ横型igbt |
JP4773182B2 (ja) * | 2005-10-28 | 2011-09-14 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
JP4817827B2 (ja) * | 2005-12-09 | 2011-11-16 | 株式会社東芝 | 半導体装置 |
US7923345B2 (en) * | 2005-12-22 | 2011-04-12 | Nxp B.V. | Methods relating to trench-based support structures for semiconductor devices |
TWI323498B (en) * | 2006-04-20 | 2010-04-11 | Nanya Technology Corp | Recessed gate mos transistor device and method of making the same |
US20090302375A1 (en) * | 2006-07-24 | 2009-12-10 | Nxp B.V. | Method of manufacturing a semiconductor device and device manufactured by the method |
US20080124870A1 (en) * | 2006-09-20 | 2008-05-29 | Chanho Park | Trench Gate FET with Self-Aligned Features |
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- 2003-05-21 WO PCT/IB2003/002230 patent/WO2003103036A1/en active Application Filing
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Also Published As
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AU2003232995A1 (en) | 2003-12-19 |
US7232726B2 (en) | 2007-06-19 |
EP1514300A1 (en) | 2005-03-16 |
WO2003103036A1 (en) | 2003-12-11 |
JP2005528796A (ja) | 2005-09-22 |
US20050208722A1 (en) | 2005-09-22 |
CN1656610A (zh) | 2005-08-17 |
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