CN108074888A - 具有双面冷却的电源模块 - Google Patents
具有双面冷却的电源模块 Download PDFInfo
- Publication number
- CN108074888A CN108074888A CN201710438265.3A CN201710438265A CN108074888A CN 108074888 A CN108074888 A CN 108074888A CN 201710438265 A CN201710438265 A CN 201710438265A CN 108074888 A CN108074888 A CN 108074888A
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- China
- Prior art keywords
- guide portion
- semiconductor chip
- demarcation strip
- power module
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000001816 cooling Methods 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 229910000679 solder Inorganic materials 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 13
- 125000006850 spacer group Chemical group 0.000 description 11
- 238000003466 welding Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
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Abstract
本发明公开一种具有双面冷却的电源模块,其包括:半导体芯片,其被设置在上部衬底和下部衬底之间;第一电源引导部,其被设置在上部衬底和半导体芯片之间;信号引导部,其被设置在上部衬底和半导体芯片之间,并且与第一电源引导部间隔开;第二电源引导部,其被设置在下部衬底和半导体芯片之间;分隔板,其被设置在第一电源引导部、信号引导部与半导体芯片之间;其中分隔板经由形成为通过分隔板的第一孔将第一电源引导部与半导体芯片连接,并且经由形成为通过分隔板的第二孔将信号引导部与半导体芯片连接。
Description
技术领域
本公开总体涉及一种具有双面冷却的电源模块。更特别地,本公开涉及一种具有双面冷却的电源模块,其中半导体芯片被设置在上部衬底和下部衬底之间。
背景技术
通常,混合动力控制单元(“HPCU”)(逆变器)是用于环保型车辆(混合动力车辆/电动车辆)的组件。由于电源模块占构成HPCU的组件的成本的大部分,因此已经积极地进行研究和开发以实现高功率、小型化和成本降低。
如图1所示,具有双面冷却的电源模块被配置为使得包括绝缘栅双极晶体管(IGBT)和二极管的半导体芯片30被设置在上部衬底10和下部衬底20之间,并且设置在上部衬底和下部衬底外部的冷却器(未示出)去除由半导体芯片30产生的热。由于该配置,可以减小电源模块的尺寸并且提高冷却性能。
然而,在传统电源模块中,半导体芯片30可以设置有间隔部40,以确保用于传输和接收操作信号的导线80的空间,其中为了最小化间隔部40与上部衬底10和下部衬底20之间的热膨胀率差异,并且为了保持高导热性,使用诸如铝-碳化硅(“Al-SiC”)、铜-钼(“Cu-Mo”)等昂贵的材料,从而增加电源模块的成本。
因此,为了降低传统电源模块的成本,可以利用铜(“Cu”)代替间隔部40的材料。然而,Cu和半导体芯片30之间的热膨胀率存在很大差异,导致由于热应力引起的降低的耐久性和潜在的损坏。
进一步地,传统电源模块需要用于使用导线80将半导体芯片30附接到信号引导部70的工艺。详细地,传统工艺被划分为三个步骤:用于使用焊料S焊接下部衬底10和半导体芯片30的第一焊接工艺;用于接合半导体芯片30和导线80的接合工艺;以及用于使用焊料焊接半导体芯片30、间隔部40和上部衬底10的第二焊接工艺。这些工艺可能通过增加制造工艺的复杂性来降低生产率。
因此,需要新的电源模块,其可以使用简单的制造工艺以低成本制造,其没有由热应力引起的问题,并且其不需要间隔部。
前述内容仅旨在帮助对本公开的背景技术的理解,并且不旨在意味着本公开落入本领域技术人员已知的相关技术的范围内。
发明内容
本公开通过提供具有双面冷却的电源模块来解决相关技术中出现的以上问题,该具有双面冷却的电源模块可以使用简单的制造工艺以低成本制造,没有由热应力引起的问题,并且不需要间隔部。
为了实现以上目的,根据本公开的一个方面,提供一种具有双面冷却的电源模块,其具有设置在上部衬底和下部衬底之间的半导体芯片,该电源模块包括:第一电源引导部,其被设置在上部衬底和半导体芯片之间;信号引导部,其被设置在上部衬底和半导体芯片之间,并且与第一电源引导部间隔开;第二电源引导部,其被设置在下部衬底和半导体芯片之间;分隔板,其被设置在第一电源引导部、信号引导部和半导体芯片之间,经由形成为通过分隔板的第一孔将第一电源引导部与半导体芯片连接,并且经由形成为通过分隔板的第二孔将信号引导部与半导体芯片连接。
设置在分隔板中的第二孔的内周表面可以设置有由导电材料制成的导电层。
导电层可以是镀铜层。
导电层可以具有约1至10μm的厚度。
导电层可以从第二孔的内周表面延伸到分隔板的顶表面。
设置在分隔板中的第二孔的下部可以填充有焊料,以将导电层与半导体芯片连接。
设置在分隔板中的第一孔可以填充有焊料,以将第一电源引导部和第二电源引导部与半导体芯片连接。
分隔板可以具有约100至200μm的厚度。
分隔板可以由介电材料或陶瓷材料制成。
根据本公开的具有双面冷却的电源模块具有以下有利特征。
第一,可以通过消除间隔部来降低电源模块的成本并减小尺寸。
第二,通过简化组装工艺可以提高电源模块的生产率。
第三,通过最小化焊接接头可以提高电源模块的耐久性。
第四,通过最小化电源模块的组件的膨胀率之间的差异可以提高电源模块的耐热性。
附图说明
根据结合附图的以下具体实施方式,本公开的以上和其它目的、特征及其它优点将被更清楚地理解,其中:
图1是示出具有双面冷却的传统电源模块的截面图;
图2是示出根据本公开的示例实施例的具有双面冷却的电源模块的截面图;
图3是图2的截面V1的放大截面图;
图4是图2的截面V2的放大截面图;以及
图5是示出根据本公开的示例实施例的具有双面冷却的电源模块的组装工艺的视图。
[重要部件的附图标记的描述]
10:上部衬底 20:下部衬底
30:半导体芯片 40:间隔部
50、60:电源引导部 70:信号引导部
80:导线 90:外壳
100:上部衬底 110:上部基层
120:上部金属层 200:下部衬底
210:下部基层 220:下部金属层
300:半导体芯片 310:主体
320:信号盘 330:电源板
400:分隔板 410:框架
420:第一孔 421:导电层
430:第二孔 500:第二电源引导部
600:第一电源引导部 700:信号引导部
900:外壳 T:导热材料
B:焊球 S:焊料
具体实施方式
本文使用的术语仅用于描述特定实施例的目的并且不旨在限制。如本文所使用的,单数形式“一”、“一个”和“该”也旨在包括复数形式,除非上下文另有明确指示。将进一步理解的是,当在该说明书中使用术语“包括”、“包含”、“具有”等时,其指定阐述的特征、整数、步骤、操作、元件、组件和/或其组合的存在,而不排除一个或多个其它特征、整数、步骤、操作、元件、组件和/或其组合的存在或增加。
除非另有限定,否则本文所使用的包括技术术语和科学术语的所有术语具有与本发明所属领域中普通技术人员通常理解的含义相同的含义。将进一步理解的是,本文使用的术语应当被解释为具有与它们在本说明书的上下文和相关领域中的含义一致的含义并且将不以理想化或过于正式的意义来解释,除非本文如此明确地限定。
在下文中,参照附图详细描述本公开的示例实施例。在整个附图中,相同的附图标记将指代相同或相似的部件。
如图2和图5所示,根据本公开的具有双面冷却的电源模块包括:上部衬底100,其包括上部基层110和上部金属层120;下部衬底200,其包括下部基层210和下部金属层220;以及半导体芯片300,其被设置在上部衬底100和下部衬底200之间。
上部基层110的下表面与通过连接到半导体芯片300来传输和接收高压电流的第一电源引导部600接合,并且与通过连接到半导体芯片300传输和接收操作信号的信号引导部700接合,其中第一电源引导部600和信号引导部700彼此间隔开以对彼此不导电。同时,下部基层210的上表面与通过连接到半导体芯片300传输和接收高压电流的第二电源引导部500接合。
半导体芯片300可以分别连接到第一电源引导部600、第二电源引导部500和信号引导部700。由于连接到第二电源引导部500的焊接结构类似于具有双面冷却的传统电源模块,因此本文省略其详细描述。
在本公开的示例实施例中,消除传统电源模块中所需的间隔部和导线,使得可以提供比传统电源模块小的具有双面冷却的电源模块。
为了实现这一点,分隔板400被设置在第一电源引导部600、信号引导部700与半导体芯片300之间。分隔板400被设置在与传统间隔部相同的位置,但是分隔板具有约50至200μm的厚度,该厚度比具有约1mm厚度的传统间隔部更薄。
在进一步的示例实施例中,分隔板400由以下的有机材料制成:诸如便于形成通孔的多氯联苯(“PCB”)、具有改善的绝缘性能和改善的热性能的有机-无机混合材料、或诸如低温共烧陶瓷(“LTCC”)的陶瓷材料。如果分隔板400具有小于50μm的厚度,则绝缘性能降低。另一方面,如果分隔板400具有大于200μm的厚度,则难以对第一孔430执行焊接。
如图4所示,为分隔板400的主体的框架410设置有第一孔430和第二孔420,其中半导体芯片300和第一电源引导部600经由第一孔430连接,并且半导体芯片300和信号引导部700经由第二孔420连接。
如图3和图5所示,第一孔430被配置成与设置在半导体芯片300的主体310上的电源板330的形状相对应的形状,并且焊料S被***到第一孔中,使得电源板330和第一电源引导部600电连接和热连接。
第一孔430可以被配置为使得多个电源板330可以连接到第一电源引导部600。可选地,可以存在多个第一孔430,每个第一孔具有设置在其中的电源板330。
如图4和图5所示,还可以存在形成在分隔板400的框架410中的多个第二孔420,其中每个第二孔420被设置在与设置在半导体芯片300的主体310上的多个信号盘320中的每一个相对应的位置处。
传统上,信号盘320和信号引导部700使用导线彼此附接。然而,在本公开中,信号盘320和信号引导部700被设置在另一个的顶部上,并且然后经由第二孔420连接。
虽然第二孔420的尺寸不限于预定尺寸,但是第二孔420的直径可以形成为约100至300μm,以对应于信号盘320的尺寸。
如图3所示,设置在分隔板400中的第二孔420的内周表面可以设置有由导电材料制成的导电层421。导电层421被设置用于将信号盘320与信号引导部700电连接。在示例实施例中,导电层421是具有约1至10μm的厚度的镀铜层。
如果导电层421具有小于1μm的厚度,则信号盘320与信号引导部700之间的连接可能是不稳定的;另一方面,如果导电层421具有大于10μm的厚度,则由导电层421与框架410之间的热膨胀率差异导致的应力可能损坏电源模块。
优选的是,导电层421不仅被设置在第二孔420的内周表面上,而且从第二孔420的上部延伸到分隔板400的框架410的顶表面。换言之,第二孔420的上部的外周设置有导电层421,使得导电层421和信号引导部700之间的接触从线接触转换为表面接触,使得可以有效地保持导电层421和信号引导部700之间的接触。
如果第二孔420填充有铜而不是设置有诸如导电层421的薄层,由于分隔板400和铜之间的热膨胀率差异,与电源模块的其它组件的连接可能被破坏或者可能发生破裂。
第二孔420的下部可以填充有焊料S,以在导电层421和半导体芯片300的信号盘320之间形成连接。虽然整个第二孔420可以填充有焊料S,但是至少第二孔420的下部应当填充有焊料,以填充信号盘320和导电层421之间的空隙。以该方式,可以使用最小的焊料S连接导电层421与信号盘320。
在下文中,参照图2、图4和图5,谈及本公开的组装工艺。
本公开被配置为顺序地分层放置下部衬底200、第二电源引导部500、半导体芯片300、分隔板400、第一电源引导部600、信号引导部700和上部衬底100。在本文中,在图5中省略上部衬底100。
当如上所述分层设置各个电源模块组件时,焊料S被***在第二电源引导部500与半导体芯片300之间以及在半导体芯片300与第一电源引导部600之间,并且如图3(a)所示,焊球B被预先***到第二孔420中。此处,焊球B通过将传统焊料S加工成球形而制成。
接下来,上部衬底100和下部衬底200被加压并加热,并且焊料S和焊球B被熔化以接合每个组件。
如上所述,因为本公开需要一个分层设置和一个加热工艺(即,仅需要焊接工艺),所以与需要两个分层设置工艺、两个焊接工艺和一个导线接合工艺的传统模块相比,组装时间降低,从而提高生产率。
在焊接工艺之后,初始一体形成的第一电源引导部600和信号引导部700被切割以形成防止第一电源引导部600与信号引导部700之间的接触和导电性的空间,并且通过使用外壳900包裹上部衬底和下部衬底之间的组件以完成电源模块的制造。
虽然为了说明的目的已经描述本公开的优选实施例,但是本领域技术人员将理解,在不脱离本发明的范围和精神的情况下,各种变型、添加和替换是可能的。
由于本公开的范围由所附权利要求而不是前面的描述限定,因此以上描述的实施例是说明性的而不是限制性的,并且因此,落在权利要求的边界和限制内或这些边界和限制的等同物内的所有改变旨在由权利要求所涵盖。
Claims (9)
1.一种具有双面冷却的电源模块,其包括:
半导体芯片,其被设置在上部衬底和下部衬底之间;
第一电源引导部,其被设置在所述上部衬底和所述半导体芯片之间;
信号引导部,其被设置在所述上部衬底和所述半导体芯片之间,并且与所述第一电源引导部间隔开;
第二电源引导部,其被设置在所述下部衬底和所述半导体芯片之间;
分隔板,其被设置在所述第一电源引导部、所述信号引导部与所述半导体芯片之间,其中
所述分隔板经由形成为通过所述分隔板的第一孔将所述第一电源引导部与所述半导体芯片连接,并且经由形成为通过所述分隔板的第二孔将所述信号引导部与所述半导体芯片连接。
2.根据权利要求1所述的电源模块,其中
设置在所述分隔板中的所述第二孔的内周表面被涂敷导电层。
3.根据权利要求2所述的电源模块,其中
所述导电层是镀铜层。
4.根据权利要求2所述的电源模块,其中
所述导电层具有约1至10μm的厚度。
5.根据权利要求2所述的电源模块,其中
所述导电层从所述第二孔的内周表面延伸到所述分隔板的顶表面。
6.根据权利要求2所述的电源模块,其中
设置在所述分隔板中的所述第二孔的下部填充有焊料,以将所述导电层与所述半导体芯片连接。
7.根据权利要求1所述的电源模块,其中
设置在所述分隔板中的所述第一孔填充有焊料,以将所述第一电源引导部和所述第二电源引导部与所述半导体芯片连接。
8.根据权利要求1所述的电源模块,其中
所述分隔板具有约100至200μm的厚度。
9.根据权利要求1所述的电源模块,其中
所述分隔板由介电材料或陶瓷材料制成。
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KR20180052143A (ko) | 2018-05-18 |
US9922911B1 (en) | 2018-03-20 |
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DE102017209770A1 (de) | 2018-05-09 |
CN108074888B (zh) | 2023-03-10 |
DE102017209770B4 (de) | 2023-06-29 |
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