CN108015650B - 晶片的加工方法 - Google Patents

晶片的加工方法 Download PDF

Info

Publication number
CN108015650B
CN108015650B CN201711012235.2A CN201711012235A CN108015650B CN 108015650 B CN108015650 B CN 108015650B CN 201711012235 A CN201711012235 A CN 201711012235A CN 108015650 B CN108015650 B CN 108015650B
Authority
CN
China
Prior art keywords
wafer
cutting
adhesive tape
grinding
supporting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201711012235.2A
Other languages
English (en)
Other versions
CN108015650A (zh
Inventor
山下阳平
小幡翼
小川雄辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of CN108015650A publication Critical patent/CN108015650A/zh
Application granted granted Critical
Publication of CN108015650B publication Critical patent/CN108015650B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B19/00—Single-purpose machines or devices for particular grinding operations not covered by any other main group
    • B24B19/22—Single-purpose machines or devices for particular grinding operations not covered by any other main group characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02016—Backside treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

提供晶片的加工方法，将在正面上由多条分割预定线划分为多个器件的晶片高效地分割成各个器件而不使器件的品质降低。其中，该晶片的加工方法包含如下的工序：框架支承工序，在晶片(10)的正面(10a)上粘贴粘合带(T)并且将粘合带(T)的外周粘贴在具有收纳晶片(10)的开口部的环状框架(F)上，从而借助粘合带(T)而利用环状框架(F)对晶片(10)进行支承；背面磨削工序，对该晶片(10)的背面(10b)进行磨削而使该晶片薄化；切削槽形成工序，从该晶片(10)的背面(10b)与分割预定线(12)对应地定位切削刀具(33)而形成未达到正面(10a)的切削槽(100)；切断工序，从该晶片(10)的背面(10b)沿着该切削槽(100)照射激光光线而将该分割预定线(12)完全切断；以及拾取工序，从该粘合带拾取各个器件芯片。

Description

晶片的加工方法
技术领域
本发明涉及晶片的加工方法，将由多条分割预定线划分为多个器件的晶片分割成各个器件芯片。
背景技术
通过具有切削刀具的切割装置将由分割预定线划分而在正面上形成有IC、LSI等多个器件的晶片分割成各个器件芯片，器件芯片被应用于移动电话、个人计算机等电子设备。
近年来，公知有为了实现器件的高速化而在硅晶片等半导体基板的正面上形成多层低介电常数绝缘膜(所谓Low-k膜)来作为层间绝缘膜从而形成作为IC、LSI的功能层。这里，由于Low-k膜形成于晶片的正面侧整体，所以也会层叠在分割预定线上，当利用切削刀具将该晶片切断时Low-k膜会像云母那样剥离，存在器件的品质降低的问题。
因此，提出并已实用化了如下的方法：从晶片的正面侧照射激光光线而沿着分割预定线将Low-k膜去除，将切削刀具定位在该去除后的区域而进行切割，从而分割成各个器件芯片(例如，参照专利文献1。)。
专利文献1：日本特开2005-064231号公报
根据上述的专利文献1所记载的加工方法，虽然能够解决在通过直接切割将Low-k膜去除的情况下产生的问题，但为了超过切削刀具的宽度地将Low-k膜从间隔道上去除以使得切削刀具不与Low-k膜接触，需要在分割预定线上形成至少两条激光加工槽，存在生产性较差的问题。
此外，在实施上述的专利文献1所记载的加工方法的期间，例如，明确了存在以下那些问题。
(1)即使实施对晶片的正面侧照射激光光线而将Low-k膜去除的激光切槽加工，当Low-k膜的去除不充分时，有时也产生之后实施的切割时的切削刀具的偏移或倾倒，有时该切削刀具会出现不均匀磨损。
(2)当从晶片的正面侧进行激光切槽时，因所谓碎屑飞散而使器件的品质降低，因此为了防止该情况而产生了另外涂布保护膜的需要，生产性降低。
(3)通过多次照射激光光线，可能会在晶片上残留热应变而导致器件的抗折强度的降低。
(4)由于将激光加工槽形成得较宽以便超过切削刀具的宽度，所以需要宽度较宽的间隔道，用于形成器件的区域被压迫，器件的获取个数减少。
(5)在Low-k膜的上表面上，具有用于保护内部不接触外界的水分、金属离子的由SiN或SiO2构成的钝化膜，当从晶片的正面侧照射激光光线时，透过该钝化膜对Low-k膜进行加工，在Low-k膜上产生的热量无法散发，Low-k膜发生剥离等，加工在横向上变宽(也被称为“底切”)，成为使器件的品质降低的主要原因。
发明内容
因此，本发明的目的在于，提供晶片的加工方法，能够在晶片的正面上层叠多层层间绝缘膜而形成功能层，并且将由多条分割预定线划分为多个器件的晶片高效地分割成各个器件芯片而不使器件的品质降低。
根据本发明，提供晶片的加工方法，将由交叉的多条分割预定线划分而在正面上形成有多个器件的晶片分割成各个器件芯片，其中，该晶片的加工方法具有如下工序：框架支承工序，在晶片的正面上粘贴粘合带并且将该粘合带的外周粘贴在具有收纳该晶片的开口部的环状框架上，从而借助该粘合带而利用该环状框架对该晶片进行支承；背面磨削工序，在实施了该框架支承工序之后，对该晶片的背面进行磨削而使该晶片薄化；切削槽形成工序，在实施了该背面磨削工序之后，从该晶片的背面与分割预定线对应地定位切削刀具而形成未达到正面的切削槽；切断工序，在实施了该切削槽形成工序之后，从该晶片的背面沿着该切削槽照射激光光线而将该分割预定线完全切断；以及拾取工序，在实施了该切断工序之后，从该粘合带拾取各个器件芯片。
根据本发明的晶片的加工方法，不需要在晶片的正面上形成多个激光加工槽，提高了生产性，并且解决了上述那样的问题点。此外，能够在从器件的背面侧使拾取用的夹头进行作用而从粘合带拾取分割后的各个器件芯片之后，直接将器件芯片的正面侧接合在布线基板上，能够进一步提高生产性。
附图说明
图1的(a)是示出框架支承工序的分解立体图，图1的(b)是示出框架支承工序的立体图。
图2是示出背面磨削工序的立体图。
图3的(a)是示出切削槽形成工序的立体图，图3的(b)是切削槽形成工序实施后的晶片的局部放大剖视图。
图4是切削槽形成工序实施后的立体图。
图5的(a)是示出切断工序的立体图，图5的(b)是切断工序实施后的晶片的局部放大剖视图。
图6的(a)是切断工序实施后的立体图，图6的(b)是示出拾取工序的剖视图。
标号说明
10：晶片；12：分割预定线；14：器件；20：磨削装置；22：旋转主轴；23：安装座；24：磨削磨轮；25：磨削磨具；30：切削装置；32：旋转主轴；33：切削刀具；40：激光加工装置；42：激光头；60：拾取装置；100：切削槽；102：切断部；T：粘合带；F：环状框架。
具体实施方式
以下，参照附图对本发明的晶片的加工方法的实施方式进行详细说明。
在图1中示出了通过本发明的晶片的加工方法进行实施的、将晶片10借助粘合带支承在框架上的框架支承工序。更具体来说，如图1的(a)所示，在晶片10的正面10a侧粘贴粘合带T，并且将粘合带T的外周粘贴在具有收纳晶片10的开口部的环状框架F上，从而借助粘合带T而利用环状框架F对晶片10进行支承。由此关于晶片10，晶片10的正面10a侧借助粘合带T被环状框架F支承。这样在晶片10变成被环状框架F支承的状态之后，如图1的(b)所示使晶片10的背面10b侧朝向上方露出，变成借助粘合带T被环状框架F支承的状态，框架支承工序完成。另外，图1所示的晶片10例如由厚度为700μm的硅的基板构成，在正面10a上呈格子状形成有多条分割预定线12，并且在由该多条分割预定线12划分出的多个区域内形成有IC、LSI等器件14。
在实施了该框架支承工序之后，接着实施背面磨削工序。在该背面磨削工序中，如图2所示，使粘贴了粘合带T的正面10a侧朝向下方并使作为被磨削面的背面10b侧朝向上方而载置在磨削装置(省略了整体图。)的磨削单元20所具有的未图示的卡盘工作台上。该卡盘工作台构成为能够通过未图示的旋转驱动机构进行旋转，其保持面由多孔性材料构成，并与未图示的吸引单元连接，该卡盘工作台构成为在后述的磨削工序时对晶片10进行吸引保持以使得晶片10在该卡盘工作台上不发生位置偏移等。
磨削单元20具有用于对载置在卡盘工作台上的晶片10进行磨削而使其薄化的结构，该磨削单元具有：主轴22，其通过未图示的旋转驱动机构进行旋转；安装座23，其安装在该主轴22的下端；以及磨削磨轮24，其安装在该安装座23的下表面，在磨削磨轮24的下表面呈环状配设有多个磨削磨具25。另外，虽然不是必须的结构，但优选以围绕该卡盘工作台的外周的方式例如在4个部位设置对环状框架F进行把持的夹具，利用该夹具对环状框架F进行保持，并且优选环状框架F被拉拽以便处于比该卡盘工作台的晶片10的保持面低的位置。那样的话，能够防止在后述的背面磨削时环状框架F与磨削磨具25接触，环状框架F不会成为障碍。
在将晶片10吸引保持在卡盘工作台上之后，一边使该卡盘工作台按照在图2中箭头Fa所示的方向例如以300rpm进行旋转，一边使磨削磨轮24按照在图2中箭头22a所示的方向例如以6000rpm进行旋转。然后，使磨削磨具25与晶片10的背面10b接触，对磨削磨轮24例如以1μm/秒的磨削进给速度朝向下方(即，与该卡盘工作台垂直的方向)进行磨削进给。此时，能够一边通过未图示的接触式的测量仪对晶片的厚度进行测量一边进行磨削，晶片10的背面10b被磨削而使硅晶片10为规定的厚度例如200μm，该背面磨削工序完成。
在完成了该背面磨削工序之后，接着实施切削槽形成工序。结束了背面磨削工序的晶片10被搬送到具有图3的(a)所示的切削单元30的切削装置(省略了整体图。)中。
从磨削单元20搬送来的晶片10被搬送到图3的(a)所示的切削单元30的加工位置，使粘贴了粘合带T的正面10a侧朝向下方而载置在未图示的卡盘工作台的保持面上，其中，该卡盘工作台配设在切削单元30上。在磨削单元20中也优选以围绕该卡盘工作台的外周的方式例如在4个部位设置对环状框架F进行把持的夹具，并且利用该夹具对环状框架F进行保持，优选环状框架F被拉拽以便处于比该卡盘工作台的晶片10的保持面低的位置。
该切削单元30具有对切削刀具33进行保持的主轴外壳34，该切削刀具33固定在旋转主轴32的前端部。在实施形成切削槽的加工时，使用未图示的拍摄单元实施对切削刀具33和吸引保持在该卡盘工作台上的晶片10的分割预定线12进行对位的对准，该拍摄单元能够通过照射红外线而从背面10b透过晶片10对正面10a侧进行拍摄。在实施了该对准之后，根据通过该对准获得的位置信息使高速旋转的切削刀具33下降，使切削刀具33沿着吸引保持在未图示的卡盘工作台上的晶片10的分割预定线12切入，并使该卡盘工作台和切削刀具33在加工进给方向(箭头X所示的方向)上相对移动。由此，从该晶片10的背面10b侧按照未达到正面10a的深度和规定的槽宽(例如30μm)形成如作为切削部分的放大剖视图而示出的图3的(b)所示的沿着分割预定线12的切削槽100。另外，如图所示的那样在正面10a侧形成有Low-k膜10c，以未达到正面10a(即未达到Low-k膜10c)的深度切削出该切削槽100。该卡盘工作台构成为自由旋转，通过使该卡盘工作台进行旋转而能够对晶片10相对于切削刀具33的方向进行自由变更。由此能够与晶片10的全部的分割预定线12对应地从背面10b侧形成上述切削槽100，切削槽形成工序完成而变成图4所示的状态。另外，图3的(b)是为了方便说明而对切削槽100进行强调而记载的，并没有按照实际的尺寸。
在完成了该切削槽形成工序之后，实施将分割预定线12完全切断的切断工序。实施了该切削槽形成工序的晶片10被搬送到具有图5的(a)所示的激光加工单元40的激光加工装置(省略了整体图)中，使粘贴了粘合带T的正面侧10a朝向下方而载置在激光加工装置的未图示的卡盘工作台的保持面上。在激光加工装置中也优选以围绕该卡盘工作台的外周的方式例如在4个部位设置对环状框架F进行把持的夹具，构成为利用该夹具对环状框架F进行保持。
在对载置在该卡盘工作台上的晶片10实施激光加工时，使用未图示的拍摄单元实施对激光头(聚光器)42和吸引保持在该卡盘工作台上的晶片10的分割预定线12进行对位的对准。在实施了该对准之后，根据通过该对准获得的位置信息，从吸引保持在该卡盘工作台上的晶片10的背面10b侧沿着分割预定线12照射对于晶片10具有吸收性的波长的激光光线，并且使该卡盘工作台和该激光头42在加工进给方向(箭头X所示的方向)上相对移动。由此，如在图5的(b)中作为放大剖视图示出的那样，在切削槽100的底部(即在形成了Low-k膜10c的晶片10的正面10a侧)沿着分割预定线12形成有将晶片10与Low-k膜10c一起完全切断的切断部102。该卡盘工作台构成为能够通过未图示的位置变更单元对相对于激光头42的相对的位置进行自由变更，通过使该位置变更单元进行动作而沿着晶片10的全部的分割预定线12形成切断部102，由此，该切断工序完成。
另外，在本实施方式的切断工序中实施的激光加工条件例如按照以下方式进行设定。
光源：YAG脉冲激光
波长：355nm(YAG激光的第3高次谐波)
输出：3.0W
重复频率：20kHz
进给速度：100mm/秒
在实施了该切断工序之后，实施拾取工序。在根据本发明而构成的晶片的加工方法中，晶片10结束了切断工序而沿着分割预定线12形成有切断部102，如图6的(a)所示，晶片10已经借助粘合带T被环状框架F支承，变成能够直接实施拾取工序的状态。利用在图6的(b)中示出了其一部分的拾取装置60来实施该拾取工序，该拾取装置60具有：框架保持部件61，其在上表面部载置环状框架F；夹具62，其对上述环状框架F进行保持；以及扩展鼓63，其由至少上方开口的圆筒形状构成，用于对被该夹具62保持的环状框架F上所安装的晶片10进行扩展。框架保持部件61被支承单元64支承为能够升降，该支承单元64由以围绕扩展鼓63的方式设置的多个气缸64a和从气缸64a延伸的活塞杆64b构成。
该扩展鼓63被设定为比环状框架F的内径小而且比晶片10的外径大，其中，该晶片10粘贴在粘合带T上，该粘合带T安装在环状框架F上。这里，如图6的(b)所示，拾取装置60能够处于框架保持部件61与扩展鼓63的上表面部为大致相同的高度的位置(由虚线示出)和通过支承单元64的作用使框架保持部件61下降而使扩展鼓63的上端部比框架保持部件61的上端部高的位置(由实线示出)。
当使上述框架保持部件61下降而使扩展鼓63的上端从虚线所示的位置相对变化为实线所示的比框架保持部件61高的位置时，安装在环状框架F上的粘合带T被按压于扩展鼓63的上端缘而扩展。其结果是，由于对粘贴于粘合带T的晶片10放射状地作用拉伸力，所以各个器件14彼此沿着切断部102分离，其中，该切断部102在上述的切断工序中沿着分割预定线12形成。然后，在各个器件14彼此的间隔被扩大的状态下，使拾取夹头65进行动作而从背面侧对扩大了间隔的状态下的器件14进行吸附并拾取该器件14。然后，搬送到将所拾取的器件14的正面侧接合在布线基板上的接合工序中。至此，拾取工序结束，本发明的晶片的加工方法完成。
像从上述的实施方式中理解的那样，本发明能够起到各种作用效果。
例如，从晶片的背面侧形成切削槽，并且从背面侧照射激光光线而将分割预定线完全切断，因此在形成切削槽时不存在由激光加工形成的加工槽，能够避免切削刀具的偏移或倾倒，防止切削刀具出现不均匀磨损。
并且，由于从晶片的背面侧沿着通过之前工序形成的切削槽照射激光光线从而将分割预定线完全切断，所以碎屑不会附着在器件的正面侧，不需要形成保护膜等。并且，由于不需要形成与切削刀具的宽度对应的宽度较宽的激光加工槽，所以能够避免产生如下问题等：通过多次照射激光光线而残留热应变从而使器件的抗折强度降低。
此外，在从晶片的背面侧利用切削刀具形成了切削槽之后，实施沿着该切削槽照射激光光线而完全切断的切断工序，因此不需要使分割预定线的宽度变大，不存在可获取的器件的个数因宽度较宽的分割预定线而减少等问题。特别是由于从背面侧实施激光光线的照射，通过激光加工只将形成切削槽时的残余的部分切断，所以也避免了如下问题等：像从正面侧照射激光光线而将晶片切断的情况那样，透过钝化膜来进行激光加工从而导致热量无法散发而产生底切。
并且，如上述那样，通过在实施背面磨削工序之前实施借助粘合带T而利用环状框架F对晶片10的正面10a侧进行保持的框架支承工序，从背面磨削工序到切断工序为止不需要使用另外的保护带等使晶片10翻转，能够在晶片10被完全切断成各个器件14且借助粘合带T被框架支承的状态下实施拾取工序，因此不需要在中途使另外粘贴的保护带等剥离，高效且容易地实现了在从粘合带T拾取器件14之后直接将器件的正面接合在布线基板上的作业。
另外，本发明并不限定于上述的实施方式，能够设想各种变形例。例如，在上述的实施方式中，在实施背面磨削工序、切削槽形成工序、切断工序时，将晶片10搬送到实施各工序的磨削装置、切削装置以及激光加工装置上所分别配设的卡盘工作台上，对晶片10进行保持而实施各加工，但也可以对上述各装置进行汇总而构成复合加工装置，将晶片10保持在一个卡盘工作台上，使该卡盘工作台移动至各加工装置从而实施加工。如果采用那样的结构，则不需要在装置之间对晶片10进行搬送并换载卡盘工作台。

Claims (1)

1.一种晶片的加工方法，将由交叉的多条分割预定线划分而在正面上形成有多个器件的晶片分割成各个器件芯片，其中，该晶片的加工方法仅具有如下的工序：
框架支承工序，在晶片的正面上粘贴粘合带并且将该粘合带的外周粘贴在具有收纳该晶片的开口部的环状框架上，从而借助该粘合带而利用该环状框架对该晶片进行支承；
背面磨削工序，在实施了该框架支承工序之后，在借助该粘合带而利用该环状框架对该晶片进行支承的状态下对该晶片的背面进行磨削而使该晶片薄化；
背面侧切削槽形成工序，在实施了该背面磨削工序之后，从该晶片的背面与分割预定线对应地定位切削刀具而形成未达到正面的切削槽；
切断工序，在实施了该背面侧切削槽形成工序之后，从该晶片的背面沿着该切削槽照射激光光线而将该分割预定线完全切断；以及
拾取工序，在实施了该切断工序之后，从该粘合带拾取各个器件芯片，
在实施了借助粘合带而利用环状框架对晶片进行支承的所述框架支承工序之后，直接接着实施所述背面磨削工序，在完成了该背面磨削工序之后，直接接着实施所述背面侧切削槽形成工序，
通过在实施背面磨削工序之前实施借助粘合带而利用环状框架对晶片进行支承的框架支承工序，在包括后续依次执行的背面磨削工序、背面侧切削槽形成工序、切断工序以及拾取工序在内的全部工序中，不需要使用另外的保护带使晶片翻转，并且不需要在中途使另外粘贴的保护带剥离。
CN201711012235.2A 2016-11-02 2017-10-26 晶片的加工方法 Active CN108015650B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016215459A JP2018074083A (ja) 2016-11-02 2016-11-02 ウエーハの加工方法
JP2016-215459 2016-11-02

Publications (2)

Publication Number Publication Date
CN108015650A CN108015650A (zh) 2018-05-11
CN108015650B true CN108015650B (zh) 2022-03-11

Family

ID=61912618

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711012235.2A Active CN108015650B (zh) 2016-11-02 2017-10-26 晶片的加工方法

Country Status (7)

Country Link
US (1) US10049934B2 (zh)
JP (1) JP2018074083A (zh)
KR (1) KR20180048376A (zh)
CN (1) CN108015650B (zh)
DE (1) DE102017219344A1 (zh)
SG (1) SG10201708552UA (zh)
TW (1) TWI732950B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018125479A (ja) * 2017-02-03 2018-08-09 株式会社ディスコ ウェーハの加工方法
JP7254412B2 (ja) * 2018-12-11 2023-04-10 株式会社ディスコ 被加工物の加工方法および樹脂シートユニット
CN110744731B (zh) * 2019-10-30 2021-07-27 许昌学院 一种基于光电控制的晶片切片设备
CN114346474B (zh) * 2022-01-17 2023-05-16 博捷芯(深圳)半导体有限公司 一种全自动激光晶圆切割装置及切割方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104009000A (zh) * 2013-02-22 2014-08-27 株式会社迪思科 晶片的加工方法
JP2015153770A (ja) * 2014-02-10 2015-08-24 株式会社ディスコ ウエーハの加工方法および加工装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0573724B1 (en) * 1992-06-09 1995-09-13 International Business Machines Corporation Full-wafer processing of laser diodes with cleaved facets
JPH06163687A (ja) * 1992-11-18 1994-06-10 Mitsubishi Electric Corp 半導体装置のダイシング方法及び装置
JP3865184B2 (ja) * 1999-04-22 2007-01-10 富士通株式会社 半導体装置の製造方法
JP2002141309A (ja) * 2000-11-02 2002-05-17 Lintec Corp ダイシングシートおよびその使用方法
JP2005019525A (ja) * 2003-06-24 2005-01-20 Disco Abrasive Syst Ltd 半導体チップの製造方法
JP2005064231A (ja) 2003-08-12 2005-03-10 Disco Abrasive Syst Ltd 板状物の分割方法
CN100428418C (zh) * 2004-02-09 2008-10-22 株式会社迪斯科 晶片的分割方法
JP4402974B2 (ja) * 2004-02-09 2010-01-20 株式会社ディスコ ウエーハの分割方法
JP4769429B2 (ja) * 2004-05-26 2011-09-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2006140341A (ja) * 2004-11-12 2006-06-01 Disco Abrasive Syst Ltd ウエーハの分割方法
JP2009123835A (ja) * 2007-11-13 2009-06-04 Disco Abrasive Syst Ltd 半導体デバイスの製造方法
JP2009231435A (ja) * 2008-03-21 2009-10-08 Fujitsu Microelectronics Ltd 半導体装置の製造方法
US7863159B2 (en) * 2008-06-19 2011-01-04 Vertical Circuits, Inc. Semiconductor die separation method
JP2010045151A (ja) * 2008-08-12 2010-02-25 Disco Abrasive Syst Ltd 光デバイスウエーハの加工方法
JP6189208B2 (ja) * 2013-12-26 2017-08-30 株式会社ディスコ ウエーハの加工方法
US20160148842A1 (en) * 2014-11-24 2016-05-26 Nxp B.V. Dicing of low-k wafers
JP2017084932A (ja) * 2015-10-27 2017-05-18 株式会社ディスコ ウエーハの加工方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104009000A (zh) * 2013-02-22 2014-08-27 株式会社迪思科 晶片的加工方法
JP2015153770A (ja) * 2014-02-10 2015-08-24 株式会社ディスコ ウエーハの加工方法および加工装置

Also Published As

Publication number Publication date
CN108015650A (zh) 2018-05-11
TW201820447A (zh) 2018-06-01
DE102017219344A1 (de) 2018-05-03
JP2018074083A (ja) 2018-05-10
US10049934B2 (en) 2018-08-14
TWI732950B (zh) 2021-07-11
US20180122700A1 (en) 2018-05-03
KR20180048376A (ko) 2018-05-10
SG10201708552UA (en) 2018-06-28

Similar Documents

Publication Publication Date Title
CN108022876B (zh) 晶片的加工方法
TWI732949B (zh) 晶圓的加工方法
JP6305853B2 (ja) ウエーハの加工方法
CN108015650B (zh) 晶片的加工方法
KR101881603B1 (ko) 광디바이스 웨이퍼의 가공 방법
KR20140105375A (ko) 웨이퍼의 가공 방법
KR102349663B1 (ko) 웨이퍼의 가공 방법
KR20100020420A (ko) 광 디바이스 웨이퍼의 가공 방법
KR20100023737A (ko) 광 디바이스 웨이퍼의 가공 방법
KR20170049397A (ko) 웨이퍼의 가공 방법
KR20170066250A (ko) 웨이퍼의 가공 방법
KR20170066251A (ko) 웨이퍼의 가공 방법
KR20140118757A (ko) 웨이퍼 가공 방법
JP7154860B2 (ja) ウエーハの加工方法
JP2018067647A (ja) ウエーハの加工方法
JP2015023135A (ja) ウエーハの加工方法
JP6783620B2 (ja) ウエーハの加工方法
JP6228058B2 (ja) 半導体製造装置及び半導体の製造方法
JP2014011381A (ja) ウエーハの加工方法
JP2014013807A (ja) ウエーハの加工方法
JP6740081B2 (ja) ウエーハの加工方法
JP6270525B2 (ja) 半導体の製造方法及び半導体製造装置
JP2010251416A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant