TWI732949B - 晶圓的加工方法 - Google Patents

晶圓的加工方法 Download PDF

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TWI732949B
TWI732949B TW106133667A TW106133667A TWI732949B TW I732949 B TWI732949 B TW I732949B TW 106133667 A TW106133667 A TW 106133667A TW 106133667 A TW106133667 A TW 106133667A TW I732949 B TWI732949 B TW I732949B
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山下陽平
小幡翼
小川雄輝
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日商迪思科股份有限公司
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Abstract

[課題]本發明之課題是在於提供一種晶圓的加工方法，其可以將在正面藉由複數條分割預定線而被區劃成複數個元件的晶圓，在不使元件的品質降低的情形下有效率地分割成一個個的元件。 [解決手段]一種晶圓的加工方法，包含保護構件配設步驟、背面磨削步驟、框架支撐步驟、切削溝形成步驟、切斷步驟、及拾取步驟，該保護構件配設步驟是將保護構件(保護膠帶)配設在晶圓的正面上，該背面磨削步驟是磨削該晶圓之背面來進行薄化，該框架支撐步驟是將該保護構件從該晶圓之正面剝離，並將黏著膠帶貼附於該晶圓之正面，並且在具有收容該晶圓之開口部的環狀框架上貼附該黏著膠帶的外周，而透過該黏著膠帶以環狀框架來進行支撐，該切削溝形成步驟是從該晶圓之背面對應於分割預定線來定位切削刀，以形成未到達正面之切削溝，該切斷步驟是從該晶圓的背面沿著該切削溝照射雷射光線以將該分割預定線完全地切斷，該拾取步驟是從該黏著膠帶中拾取一個個的元件晶片。

Description

晶圓的加工方法
發明領域 本發明是有關於一種將藉由複數條分割預定線而被區劃成複數個元件的晶圓分割成一個個的元件之晶圓的加工方法。
發明背景 將IC、LSI等複數個元件以分割預定線區劃而形成於正面的晶圓，是藉由具備有切削刀的切割裝置而分割成一個個的元件晶片，並將元件晶片利用於行動電話、個人電腦等電氣機器上。
近年來，為了謀求元件的高速化，已知的作法為：在矽晶圓等之半導體基板的正面，形成複數層低介電常數絕緣膜、即所謂之Low-k膜作為層間絕緣膜，並且形成成為IC、LSI之機能層。於此，由於Low-k膜是形成於晶圓之正面側整體，所以也會積層在分割預定線上，當以切削刀將其切斷時，會使Low-k膜如雲母般剝離，而有降低元件的品質之問題。
於是，已有下述方案被提出且提供於實用：從晶圓的正面側照射雷射光線並沿著分割預定線去除Low-k膜，而將切削刀定位在該已去除的區域上，並藉由切割(dicing)的方式來分割成一個個的元件晶片(參照例如專利文獻1)。 先前技術文獻 專利文獻
專利文獻1：日本專利特開2005-064231號公報
發明概要 發明欲解決之課題 根據上述之專利文獻1所記載的加工方法，雖然可將藉由直接切割來去除Low-k膜的情況下產生的問題解決，但是為了超過切削刀的寬度來將Low-k膜從切割道(street)上去除，以免切削刀接觸到Low-k膜，必須在分割預定線上形成至少2條雷射加工溝，而有導致生產性變差的問題。
此外，在實施上述專利文獻1中所記載的加工方法之中，已經很清楚的是會有例如以下的問題。 (1)即使實施將雷射光線照射於晶圓的正面側來去除Low-k膜的雷射開槽(Laser grooving)，若Low-k膜的去除不完全，會有發生之後實施的切割時的切削刀的偏移或傾斜，而導致該切削刀偏磨耗的情形。 (2)由於從晶圓的正面側進行雷射開槽時，會因所謂碎屑飛散而導致元件的品質降低，所以必須另外塗佈用來防止該情況的保護膜，因而使生產性降低。 (3)由於照射複數次雷射光線，使熱應變殘留於晶圓上，而有導致元件的抗折強度降低之疑慮。 (4)由於要將雷射加工溝形成得寬度較寬，以超過切削刀的寬度，因此變得必須有寬度較寬的切割道，而讓用於形成元件的區域受到壓迫，且減少元件的拾取個數。 (5)在Low-k膜的上表面有用於保護內部隔絕於外界的水分或金屬離子之由SiN或SiO2 所構成的鈍化膜，當從晶圓的正面側照射雷射光線時，會成為穿透該鈍化膜來加工Low-k膜之情形，使在Low-k膜產生的熱之散逸空間失去，因而使Low-k膜剝離等，導致加工朝橫向方向擴大(亦稱為「側蝕(undercut)」)，而成為降低元件的品質之要因。
據此，本發明之目的在於提供一種晶圓的加工方法，其可以將在晶圓的正面積層複數層的層間絕緣膜以形成機能層，並且藉由複數條分割預定線而區劃成複數個元件的晶圓，在不降低元件的品質之情形下，有效率地分割成一個個的元件晶片。 用以解決課題之手段
根據本發明，可提供一種晶圓的加工方法，其是將藉由交叉之複數條分割預定線所區劃而在正面形成有複數個元件之晶圓，分割成一個個的元件晶片，該晶圓的加工方法包含保護構件配設步驟、背面磨削步驟、框架支撐步驟、切削溝形成步驟、切斷步驟、及拾取步驟，該保護構件配設步驟是在晶圓之正面配設保護構件，該背面磨削步驟是在實施該保護構件配設步驟之後，磨削該晶圓之背面來進行薄化，該框架支撐步驟是在實施該背面磨削步驟之後，從該晶圓之正面剝離該保護構件，並將黏著膠帶貼附於該晶圓之正面，並且將該黏著膠帶之外周貼附在具有收容該晶圓之開口部的環狀框架上，而透過該黏著膠帶以該環狀框架來支撐著晶圓，該切削溝形成步驟是在實施該框架支撐步驟之後，從該晶圓之背面對應於分割預定線來定位切削刀並切削該晶圓，以形成未到達正面之切削溝，該切斷步驟是在實施該切削溝形成步驟之後，從該晶圓的背面沿著該切削溝照射雷射光線以將該分割預定線完全地切斷，該拾取步驟是在實施該切斷步驟之後，從該環狀框架所支撐之該黏著膠帶中拾取一個個的元件晶片。 發明效果
根據本發明之晶圓的加工方法，不需要在晶圓的正面形成複數個雷射加工溝，而可提升生產性，並且解決如上述之問題點。此外，可做到於使拾取用之筒夾(collet)從元件的背面側作用，以從黏著膠帶拾取分割後的一個個的元件晶片之後，以該狀態原樣將元件晶片的正面側黏結(bonding)至配線基板，而能夠進一步提升生產性。
用以實施發明之形態 以下，針對本發明的晶圓的加工方法的實施形態，參照附加圖式以詳細地說明。 首先，為了實施根據本發明之晶圓的加工方法，是如圖1所示地貼附用於保護晶圓10之正面10a之作為保護構件的保護膠帶16(保護構件配設步驟)。晶圓10是由例如厚度為700μm之矽基板所構成，且在正面10a將複數條分割預定線12形成為格子狀，並且在以該複數條分割預定線12所區劃出的複數個區域中形成有IC、LSI等之元件14。再者，作為保護膠帶16可以使用在由聚氯乙烯(PVC)所形成之片狀基材的表面塗佈有丙烯酸樹脂系的漿料之膠帶。然而，保護膠帶16不受限於此，只要是可做到在下個步驟所實施的背面磨削步驟時，保護晶圓10的正面10a之習知的構件即可，而可以選擇任意的構件。
在實施該保護構件配設步驟之後，接著實施背面磨削步驟。如圖2所示，在該背面磨削步驟中，是進行成將貼附有保護膠帶16之正面10a側朝向下方，並將成為被磨削面之背面10b側朝向上方，來載置在磨削裝置(省略整體圖)之磨削設備20所具備之第1工作夾台21上。第1工作夾台21是以可藉由圖未示之旋轉驅動機構而旋轉的方式構成，且該保持面是由多孔性材料所構成，並連接至圖未示之吸引設備上，而強固地吸引保持晶圓10，以免在後述之磨削步驟時，晶圓10在第1工作夾台21上產生位置偏移等。
磨削設備20具備有用於對載置於第1工作夾台21上之晶圓10進行磨削並薄化之構成，並且具備藉由圖未示之旋轉驅動機構而使其旋轉之旋轉主軸22、裝設在該旋轉主軸22之下端的安裝座23、及安裝在該安裝座23之下表面的磨削輪24，並且在磨削輪24的下表面環狀地配設有複數個磨削磨石25。
已將晶圓10吸引保持在第1工作夾台21上之後，即可使第1工作夾台21在圖2中朝箭頭21a所示之方向以例如300rpm進行旋轉，並且使磨削輪24在圖2中朝以箭頭22a所示之方向以例如6000rpm進行旋轉。並且，使磨削磨石25接觸於晶圓10之背面10b，將磨削輪24以例如1μm/秒之磨削進給速度朝下方、亦即相對於第1工作夾台21垂直的方向磨削進給。此時，可以藉由圖未示之接觸式的測量儀來一邊測量晶圓的厚度一邊進行磨削，且磨削晶圓10之背面10b而將矽晶圓10形成規定之厚度(例如200μm)，即完成該背面磨削步驟。
已完成該背面磨削步驟完成後，接著實施框架支撐步驟。在框架支撐步驟中，首先，是如圖3所示，從已完成背面磨削步驟之晶圓10之正面10a側剝離保護膠帶16。並且，如圖4(a)所示，將黏著膠帶T貼附在已剝離保護膠帶16之晶圓10的正面10a側，並且將黏著膠帶T之外周貼附在具有收容晶圓10之開口部的環狀框架F上，且透過黏著膠帶T而以環狀框架F來支撐晶圓10。藉此，晶圓10會成為下述狀態：晶圓10之正面10a側透過黏著膠帶T而被環狀框架F所支撐之狀態。如此進行，晶圓10成為被環狀框架F所支撐之狀態後，如圖4(b)所示，使晶圓10之背面10b側露出於上方，而完成框架支撐步驟。
已完成背面磨削步驟且已實施框架支撐步驟之晶圓10，會被搬送至圖5(a)所示之切削裝置的切削設備30，且將貼附有黏著膠帶T之正面10a側朝向下方來載置於配設在切削裝置之圖未示的工作夾台的保持面上。在此切削裝置中，也是以圍繞該工作夾台之外周的方式在例如4個地方設置把持環狀框架F之夾具為較理想，且是以該夾具保持環狀框架F，並且將環狀框架F下拉成成為比該工作夾台之晶圓10的保持面更低的位置。
該切削設備30具備有主軸殼體34，且主軸殼體34是保持已固定在主軸32的前端部的切削刀33。在實施藉由切削設備30來形成切削溝之加工之時，會實施校準，該校準是利用可以藉由從背面10b照射紅外線而穿透晶圓10並對正面10a側進行拍攝之圖未示的攝像設備，來進行晶圓10的分割預定線12與切削刀33的對位。已實施該校準後，讓根據以該校準所得到之位置資訊而高速旋轉之切削刀33下降，且沿著被吸引保持在切削裝置之工作夾台上之晶圓10的分割預定線12切入，並使該工作夾台與切削刀33在加工進給方向(箭頭X所示之方向)上相對移動。藉此，將作為切削部分的放大截面圖而顯示之如圖5(b)所示之沿著分割預定線12的切削溝100，以從該晶圓10之背面10b側至未到達正面10a的深度、及規定之溝寬(例如30μm)來形成。再者，在正面10a側如圖所示地形成有Low-k膜10c，且該切削溝100是切削到未到達正面10a、亦即未到達Low-k膜10c之深度。該工作夾台是可旋轉自如地構成，且可以藉由使該工作夾台旋轉，而自如地變更晶圓10相對於切削刀33之方向。藉此，可以對應於晶圓10的所有的分割預定線12，而從背面10b側形成上述切削溝100，且當切削溝形成步驟完成時，會成為圖5(c)所示之狀態。
已完成該切削溝形成步驟之後，實施將分割預定線12完全地切斷之切斷步驟。將已實施該切削溝形成步驟之晶圓10搬送至具備有圖6(a)所示之雷射加工設備40的雷射加工裝置(省略整體圖)，且在雷射加工裝置之圖未示的工作夾台的保持面上，將貼附有黏著膠帶T之正面10a側設成下方來載置。在雷射加工裝置中，較理想的也是構成為在圍繞該工作夾台之外周於例如4個地方設置把持環狀框架F的夾具，且以該夾具來保持環狀框架F。
在對載置於該工作夾台之晶圓10實施雷射加工之時，可實施校準，該校準是利用圖未示之攝像設備，來進行吸引保持在該工作夾台之晶圓10的分割預定線12與雷射頭(聚光器)42對位。已實施校準之後，依據校準而得到的位置資訊，從吸引保持在該工作夾台上之晶圓10的背面10b側，沿著分割預定線12照射雷射光線，並且使該工作夾台與該雷射頭42在加工進給方向(以箭頭X所示之方向)上相對移動。藉此，如於圖6(b)中作為放大截面圖而顯示地，在切削溝100之底部、亦即形成有Low-k膜10c的晶圓10的正面10a側，形成沿著分割預定線12將晶圓10和Low-k膜10c一起完全地切斷的切斷部102。該工作夾台是藉由圖未示的位置變更設備，而以可自如地變更相對於雷射頭42之相對位置的方式構成，並藉由作動該位置變更設備以沿著晶圓10的所有分割預定線12來形成切斷部102，而完成該切斷步驟。
並且，本實施形態之切斷步驟中所實施的雷射加工條件，是設定成例如以下。
光源 ：YAG脈衝雷射 波長 ：355nm(YAG雷射之第三諧波) 輸出 ：3.0W 重複頻率 ：20kHz 進給速度 ：100mm/秒
已實施該切斷步驟之後，實施拾取步驟。在根據本發明所構成的晶圓的加工方法中，結束切斷步驟而沿著分割預定線12形成有切斷部102之晶圓10，是成為已透過黏著膠帶T被環狀框架F所支撐，而可以原樣實施拾取步驟的狀態。該拾取步驟是藉由圖7中表示其一部分的拾取裝置50所實施的步驟，該拾取裝置50具備框架保持構件51、於其上表面部載置環狀框架F且保持上述環狀框架F之夾具52、及由至少上方開口的圓筒形狀所構成的擴張圓筒53，該擴張圓筒53是用於擴張已裝設於被該夾具52所保持的環狀框架F上之晶圓10。框架保持構件51是藉由支撐設備54而可升降地被支撐，該支撐設備54是由設置成圍繞擴張圓筒53的複數個汽缸54a、及從汽缸54a延伸之活塞桿54b所構成。
該擴張圓筒53是設定得比環狀框架F之內徑更小，且比貼附於已裝設於環狀框架F之黏著膠帶T上之晶圓10的外徑更大。在此，如圖7所示，拾取裝置50可以設成使框架保持構件51與擴張圓筒53的上表面部成為大致相同高度的位置(以虛線表示)、及可藉由支撐設備54的作用而使框架保持構件51下降，且擴張圓筒53之上端部成為比框架保持構件51之上端部更高的位置(以實線表示)。
當使上述框架保持構件51下降，而將擴張圓筒53的上端從以虛線表示的位置開始，相對地變化成比以實線表示的框架保持構件51更高的位置時，會使已裝設於環狀框架F之黏著膠帶T按壓於擴張圓筒53之上端緣而被擴張。其結果，由於有拉伸力放射狀地作用在貼附於黏著膠帶T的晶圓10，因此一個個的元件14彼此沿著在上述切斷步驟中沿分割預定線12形成的切斷部102而相遠離。並且，在已將一個個的元件14彼此的間隔擴大的狀態下，作動拾取筒夾55，而將間隔已擴大之狀態下的元件14從背面側吸附並拾取。然後，搬送到黏結步驟，該黏結步驟是將已拾取的元件14的正面側黏結(bonding)於配線基板上。藉由以上，結束拾取步驟，而完成依據本發明之晶圓的加工方法。
本發明是如由上述之實施形態中可理解地，能夠發揮各種的作用效果。 例如，由於形成為從晶圓的背面側形成切削溝，並且從背面側照射雷射光線來將分割預定線完全地切斷，因此形成切削溝時並沒有藉由雷射加工形成的加工溝，因而可避免切削刀之偏移或傾斜，且可以防止切削刀偏磨耗之情形。
又，由於藉由從晶圓的背面側沿著在之前步驟所形成的切削溝照射雷射光線以進行成將分割預定線完全地切斷，因此不會有碎屑附著於元件的正面側之情形，而不需要形成保護膜等。又，由於不需要對應於切削刀的寬度之寬度較寬的雷射加工溝，因此可以避免產生因照射複數次雷射光線而殘留熱應變且使元件之抗折強度降低等的問題。
此外，由於在從晶圓的背面側藉由切削刀形成切削溝之後，實施沿著該切削溝照射雷射光線來完全地切斷之切斷步驟，因此不需要將分割預定線之寬度做得較大，而不會有因為寬度較寬之分割預定線而導致可以取得的元件的個數減少等的問題。特別是，由於雷射光線的照射是從背面側實施，並且僅藉由雷射加工來對形成切削溝時的剩餘的部分進行切斷，所以也能夠避免如從正面側照射雷射光線來切斷晶圓之情況，因穿透鈍化膜來進行雷射加工而失去熱的散逸空間，且產生側蝕等的問題。
並且，在本發明中，是在實施切削溝形成步驟之前，藉由實施從晶圓10之正面10a側剝離保護膠帶，並且透過黏著膠帶T以環狀框架F來進行保持之框架支撐步驟，而變得可在從切削溝形成步驟到拾取步驟為止均不必使用另外的保護膠帶等，並且形成為以透過黏著膠帶T而被支撐在環狀框架F之狀態來切斷成一個個的元件14，且可在該狀態下實施拾取步驟。因此，可效率良好地並容易地實現從黏著膠帶T拾取元件14，並且原樣將元件的正面側黏結到配線基板的作業。
再者，本發明並不限定於上述之實施形態，且可設想有各種的變化例。例如，雖然在上述之實施形態中，是在實施背面磨削步驟、切削溝形成步驟，及切斷步驟時，將晶圓10搬送並保持在分別配設於實施各步驟之磨削裝置、切削裝置、雷射加工裝置之各個設備的工作夾台上，而實施各種加工，但也可形成為匯總上述各裝置來構成複合加工裝置，並且藉由將晶圓10保持在一個工作夾台上，且使該工作夾台移動至各個加工裝置來實施加工。如此構成，即可在裝置間搬送晶圓10而不必更換裝載工作夾台。
10‧‧‧晶圓10a‧‧‧正面10b‧‧‧背面10c‧‧‧Low-k膜12‧‧‧分割預定線14‧‧‧元件16‧‧‧保護膠帶20‧‧‧磨削設備21‧‧‧第1工作夾台21a、22a、X‧‧‧箭頭22‧‧‧旋轉主軸23‧‧‧安裝座24‧‧‧磨削輪25‧‧‧磨削磨石30‧‧‧切削設備33‧‧‧切削刀32‧‧‧主軸34‧‧‧主軸殼體40‧‧‧雷射加工設備42‧‧‧雷射頭(聚光器)50‧‧‧拾取裝置51‧‧‧框架保持構件52‧‧‧夾具53‧‧‧擴張圓筒54‧‧‧支撐設備54a‧‧‧汽缸54b‧‧‧活塞桿55‧‧‧拾取筒夾100‧‧‧切削溝102‧‧‧切斷部F‧‧‧環狀框架T‧‧‧黏著膠帶
圖1是顯示保護構件配設步驟之立體圖。 圖2是顯示背面磨削步驟的立體圖。 圖3是顯示將保護膠帶從晶圓的正面剝離之情形的立體圖。 圖4(a)是顯示框架支撐步驟的立體圖，圖4(b)是顯示框架支撐步驟實施後的立體圖。 圖5(a)是顯示切削溝形成步驟之立體圖，圖5(b)是形成有切削溝之晶圓的放大截面圖，圖5(c)是沿著所有的分割預定線均實施了切削溝形成步驟的晶圓的立體圖。 圖6(a)是顯示切斷步驟的立體圖，圖6(b)是顯示切斷步驟實施後的晶圓之局放大截面圖。 圖7是顯示拾取步驟的局部截面側視圖。
10‧‧‧晶圓
10a‧‧‧正面
10b‧‧‧背面
10c‧‧‧Low-k膜
40‧‧‧雷射加工設備
42‧‧‧雷射頭(聚光器)
100‧‧‧切削溝
102‧‧‧切斷部
F‧‧‧框架
T‧‧‧黏著膠帶
X‧‧‧箭頭

Claims (2)

  1. 一種晶圓的加工方法，是將晶圓分割成一個個的元件晶片，前述晶圓是藉由交叉之複數條分割預定線所區劃成複數個元件且在正面形成有Low-k膜，該晶圓的加工方法具備有：保護構件配設步驟，在晶圓的該正面設置保護構件；背面磨削步驟，在實施該保護構件配設步驟之後，磨削該晶圓之背面來進行薄化；框架支撐步驟，在實施該背面磨削步驟之後，從該晶圓之正面剝離該保護構件，並將黏著膠帶貼附於該晶圓之正面，並且將該黏著膠帶之外周部分貼附在具有收容該晶圓之開口部的環狀框架上，而透過該黏著膠帶將晶圓支撐在該環狀框架上；切削溝形成步驟，在實施該框架支撐步驟之後，將切削刀與該分割預定線一次對準一條地定位在該晶圓之背面，並以該切削刀切削該晶圓，以形成在該晶圓中於該晶圓之厚度方向上具有預定深度且未到達該正面之切削溝；切斷步驟，在實施該切削溝形成步驟之後，對該晶圓從該晶圓的背面沿著該切削溝照射雷射光線，以使該雷射光線從該預定深度到該晶圓之該正面側將該晶圓與該Low-k膜切斷，以形成切斷部，該切斷部是至少從該預定深度通過該Low-k膜延伸到該晶圓之該正面側，以沿著該分割預定線將該晶圓完全地分離成各個元件晶片；及拾取步驟，在實施該切斷步驟之後，從支撐在該環狀 框架上的該黏著膠帶中拾取該各個的元件晶片。
  2. 如請求項1之晶圓的加工方法，更進一步包含對黏著層施加放射狀向外的拉伸力，使由完全分離的晶圓所形成的各個晶片擴大間隔。
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