CN107993940A - The preparation method of p-type solar cell - Google Patents
The preparation method of p-type solar cell Download PDFInfo
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- CN107993940A CN107993940A CN201711047566.XA CN201711047566A CN107993940A CN 107993940 A CN107993940 A CN 107993940A CN 201711047566 A CN201711047566 A CN 201711047566A CN 107993940 A CN107993940 A CN 107993940A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 67
- 238000010438 heat treatment Methods 0.000 claims abstract description 33
- 238000002161 passivation Methods 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000011267 electrode slurry Substances 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims abstract description 9
- 238000012545 processing Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000009413 insulation Methods 0.000 claims abstract description 4
- 238000004140 cleaning Methods 0.000 claims abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 238000010146 3D printing Methods 0.000 claims description 2
- 238000000231 atomic layer deposition Methods 0.000 claims description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 238000007641 inkjet printing Methods 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 238000005245 sintering Methods 0.000 abstract description 14
- 230000000415 inactivating effect Effects 0.000 abstract description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 4
- 239000001257 hydrogen Substances 0.000 abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 4
- 238000000605 extraction Methods 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 229910019213 POCl3 Inorganic materials 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 235000008216 herbs Nutrition 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001815 facial effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention provides a kind of preparation method of p-type solar cell, by the texturing of p-type silicon substrate surface and cleaning；Carry out pn-junction preparation；Carry out insulation processing；It is prepared by the passivation and antireflective coating for carrying out smooth surface；The electrode slurry bed of material comprising conductive compositions is graphically formed in positive and negative；Carry out the first heat treatment process；Carry out the second heat treatment process.Compare a heat treatment process, the heat treatment process twice of the preparation method of this kind of p-type solar cell can reduce the contact resistance and series resistance of battery electrode, battery sintering process window can be widened, the hydrogen inactivating performance that can be improved in passivating film gets a promotion, so that inactivating performance and contact performance etc. reach optimal at the same time.
Description
Technical field
The present invention relates to a kind of preparation method of p-type solar cell.
Background technology
At present, gradually exhausting with fossil energy, solar cell is as new energy substitution scheme, using increasingly
Extensively.Solar cell is the device that the luminous energy of the sun is converted to electric energy.Solar cell is produced using photogenic voltage principle
Carrier, is then drawn carrier using electrode, so as to be beneficial to efficiently use electric energy.
In the step of solar cell used at present, after the coating of patterned conductive slurry is formed, one can be carried out
High temperature sintering step, the step can cause the generation of the following problem：1. traditional sintering, the contact resistance of battery electrode
It is higher with series resistance etc.；2. traditional sintering, battery sintering process window is relatively narrow, because being related to a variety of electrode constituents,
A variety of passivating structures, it is impossible to so that inactivating performance and contact performance etc. reach optimal at the same time, so as to cannot reach optimal battery
Transfer efficiency.In short, an existing high temperature sintering technique is restricted the raising of battery conversion efficiency.
The content of the invention
The object of the present invention is to provide a kind of preparation method of p-type solar cell, the solar cell tool that can be formed
There is lower contact resistance, more preferable surface passivation performance, solves traditional sintering existing in the prior art, causes battery electric
The contact resistance of pole and series resistance etc. are higher, and battery sintering process window is relatively narrow, it is impossible to so that inactivating performance and contact performance
Deng at the same time reach optimal so that the problem of optimal battery conversion efficiency cannot be reached.
The present invention technical solution be：
A kind of preparation method of p-type solar cell, comprises the following steps,
Step 1, to the texturing of p-type silicon substrate surface and cleaning；
Step 2, carry out pn-junction preparation；
Step 3, carry out insulation processing；
It is prepared by step 4, the passivation for carrying out smooth surface and antireflective coating；
Step 5, in positive and negative graphically form the electrode slurry bed of material comprising conductive compositions；
Step 6, carry out the first heat treatment process；
Step 7, carry out the second heat treatment process.
Further, pn-junction preparation method takes source thermal diffusion method using gas in step 2, exterior doped source is cooperateed with heat
Reason method or ion implanting collaboration method for annealing.
Further, the preparation method of the p-type solar cell is additionally included in the deposition steps that cell backside is passivated film
Suddenly, the local film of opening of passivating film progress and to the back side forms contact window.
Further, in step 4, passivation and antireflective coating are using atomic layer deposition, plasma enhanced chemical vapor deposition side
Method, normal atmosphere vapor deposition method, low pressure gas phase deposition method or thermal oxidation process are prepared, and passivation and antireflective coating are by aoxidizing
One or more laminations composition in silicon, aluminium oxide, silicon nitride, silicon oxynitride, carborundum, titanium oxide.
Further, in step 5, the graphical method for forming the electrode slurry bed of material is that printing process, laser transfer, ink-jet are beaten
Print or 3D printing method.
Further, in step 6, the peak temperature that the first heat treatment process uses is 500 ~ 950 DEG C.
Further, in step 7, heat treatment method that the second heat treatment process uses using laser irradiation treatment method or
Quick heat treatment method.
Further, laser irradiation treatment method utilizes more than the large spot once irradiating of solar cell sizes, or makes
With the hot spot less than solar-electricity pool area be scanned formula irradiate, umber of exposures for once and more than.
Further, the wavelength for the laser that laser irradiation treatment method uses is 300 ~ 1100nm.
Further, the peak temperature that the heat treatment method that the second heat treatment process uses uses is 600 ~ 1000 DEG C.
The beneficial effects of the invention are as follows：
First, compare a heat treatment process, and the heat treatment process twice of the preparation method of this kind of p-type solar cell can drop
The contact resistance and series resistance of low battery electrode, can widen battery sintering process window, can improve the hydrogen in passivating film
Inactivating performance gets a promotion, so that inactivating performance and contact performance etc. reach optimal at the same time.
2nd, due to passing through in cell manufacturing process before and after the first heat treatment process, it is also necessary to heat treated by second
Journey, therefore the contact resistance and series resistance of battery electrode can be reduced, secondly the hydrogen inactivating performance of passivating film is improved,
Improve overall performance electrical performance transfer efficiency；In addition, this processing procedure causes in the first heat treatment process, can be in bigger
In the range of select suitable temperature, have broader process window.
Brief description of the drawings
Fig. 1 is the structure diagram of the p-type solar cell of the embodiment of the present invention one and embodiment three；
Fig. 2 is the structure diagram of the p-type solar cell of embodiment two in embodiment；
Fig. 3 is the schematic diagram of the passivating film perforate of the embodiment of the present invention one and embodiment three；
Fig. 4 is the schematic diagram of the front description of p-type solar cell in embodiment one, embodiment two and embodiment three；
Fig. 5 is the schematic diagram of the back side extraction electrode of p-type solar cell in embodiment one, embodiment two and embodiment three；
Wherein, 1-P types silicon base, 2- emitters, 3- passivation and antireflective coating, 4- surface-texturing structures, 5- front electrodes, 6-
Rear-face contact electrode, 7- backside passivation films, 8- contact windows, the thin grid of 9- electrodes, 10- electrode main grids, 11- back sides extraction electrode.
Embodiment
The preferred embodiment that the invention will now be described in detail with reference to the accompanying drawings.
Embodiment provides a kind of preparation method of p-type solar cell, by 1 surface-texturing of P-type silicon substrate and clearly
Wash；Carry out pn-junction preparation；Carry out insulation processing；It is prepared by the passivation and antireflective coating 3 for carrying out smooth surface；In the graphical shape of positive and negative
Into the electrode slurry bed of material comprising conductive compositions；Carry out the first heat treatment process；Carry out the second heat treatment process.Compare once hot
Processing procedure, the heat treatment process twice of the preparation method of this kind of p-type solar cell can reduce the contact electricity of battery electrode
Resistance and series resistance, can widen battery sintering process window, and the hydrogen inactivating performance that can be improved in passivating film gets a promotion, from
And inactivating performance and contact performance etc. is caused to reach optimal at the same time.First heat treatment process and the second heat treatment process in embodiment
Order can exchange.
Embodiment one
As Fig. 1, the preparation method of p-type solar cell are specific as follows：
1）To P-type silicon substrate 1, alkali making herbs into wool is carried out at a temperature of 70-80 degree using the KOH solution of 2%-3%, forms Surface Texture
Change structure 4, and surface clean is carried out using HF and HCl acid solutions.
2）Source is taken using POCl3 liquid to spread, and is carried out the preparation of pn-junction, is formed front side emitter pole 2, the square after diffusion
Resistance is 90ohm/sq.
3）The parasitic knot formed in battery edge and the back side is removed using mixed acid solution containing HF/HNO3, is removed with HF thereafter
The phosphorosilicate glass of front surface.
4）The passivating film at the positive back side is carried out, and prepared by positive antireflective coating.The method that PECVD is used in the present embodiment
Deposition 20-30nm aluminium oxide/80-140nm silicon nitride stack passivation layer as backside passivation film 7, deposited using PECVD
The silicon nitride of 80nm is as positive passivation and antireflective coating.
5）Laser is overleaf carried out on passivating film 7 and opens film process formation contact window 8, is made of 1mm long line segments, line segment is horizontal
To with it is longitudinally spaced be 1mm regular distribution it is local, as shown in Figure 3.
6）It is graphical to form the electrode slurry bed of material for including conductive compositions.Smooth surface and the back side use silk in the present embodiment
Net mode of printing forms positive backplate figure, and using being the silver paste containing frit, front description includes front electrode in front
5, front electrode 5 includes the thin grade of the grid 9 part such as Fig. 4 institutes of electrode of the electrode main grid 10 and derived current for being interconnected
Show.The slurry at the back side is aluminium paste, forms rear-face contact electrode 6；In addition aluminum metal also has silver paste region to be used as extraction electrode,
Back side extraction electrode 11 is as shown in Figure 5.
7）The first heat-treatment process is completed in sintering furnace, the preferable peak temperature that heats is in the present embodiment
750℃.This temperature is actual measurement silicon chip surface temperature.
8）Wavelength is used as 532nm, facula area is the laser of 1mm*1mm with the sweep speed of 15000mm/s.Battery is just
Face carries out laser irradiation,
Next the process that other tests etc. can be completed.
Embodiment two
As Fig. 2, the preparation method of p-type solar cell are specific as follows：
1) to P-type silicon substrate 1, alkali making herbs into wool is carried out at a temperature of 70-80 degree using the KOH solution of 2%-3%, forms surface-texturing
Structure 4, and surface clean is carried out using HF and HCl acid solutions.
2) take source using POCl3 liquid to spread, carry out the preparation of pn-junction, form front side emitter pole 2, the square electricity after diffusion
Hinder for 90ohm/sq.
3) the parasitic knot formed in battery edge and the back side is removed using mixed acid solution containing HF/HNO3, is removed with HF thereafter
The phosphorosilicate glass of front surface carries out positive antireflective coating preparation.
4) using PECVD method deposition passivation and antireflective coating 3, front is completed blunt using silicon nitride in the present embodiment
Change and antireflective, front thickness 80nm.
5) it is graphical to form the electrode slurry bed of material for including conductive compositions.Using screen printing mode figure has been carried out in front
Slurrying material is distributed, and front is using being to contain silver paste containing frit, and positive figure includes front electrode 5, and front electrode 5 wraps
Include electrode main grid 10 and the thin grade of grid 9 part of electrode；Overleaf whole face printing is aluminium paste, forms rear-face contact electrode 6；In addition
Also silver paste region is used as back side extraction electrode 11, such as Fig. 5.
6) carry out the first heating to be handled, complete to heat in sintering furnace in this embodiment.In the present embodiment
The preferable peak temperature that heats is 800 DEG C.This temperature is actual measurement silicon chip surface temperature.
7) laser radiation treatment process is carried out.The region of the electrode of the argentiferous of battery front side is irradiated, the back side is then
Do not carry out laser radiation treatment.Wherein the wavelength of irradiation laser is 1064nm, and spot size is the circle of diameter 60um, is scanned
Speed is 20000mm/s.
Embodiment three
The preparation method of another p-type solar cell of offer is specific as follows, and battery structure is also as shown in Figure 1：
1) to P-type silicon substrate 1, alkali making herbs into wool is carried out at a temperature of 70-80 degree using the KOH solution of 2%-3%, forms surface-texturing
Structure 4, and surface clean is carried out using HF and HCl acid solutions.
2) take source using POCl3 liquid to spread, carry out the preparation of pn-junction, the square resistance after diffusion is 90ohm/sq.
3) the parasitic knot formed in battery edge and the back side is removed using HF/HNO3 mixed acid solutions, before being removed with HF thereafter
The phosphorosilicate glass on surface carries out positive antireflective coating preparation.
4) passivation at the positive back side is carried out, and prepared by positive antireflective coating.Front is complete using silicon nitride in the present embodiment
Into passivation and antireflective, reverse side is covered using completions such as the silicon nitride of the method for PECVD and aluminium oxide.Front thickness 80nm, the back of the body
Facial mask thickness 100-500nm.
5) laser slotting processing is overleaf carried out on passivating film 7, the contact window 8 of back side aluminium paste is formed, such as Fig. 3.Use
Line segment figure, its center line spacing are 1mm, and the length of the fluting real and imaginary parts in line is 1mm.
6) it is graphical to form the electrode slurry bed of material for including conductive compositions.In the present embodiment selection smooth surface and the back side into
The coating of row electrocondution slurry, graphical distribution has been carried out using screen printing mode, and has been used on two sides different types of
Electrocondution slurry, front is using being to contain silver paste containing frit, and positive figure includes front electrode 5, and front electrode 5 includes
Electrode main grid 10 and the thin grade of grid 9 part of electrode, as shown in Figure 4.The slurry at the back side is aluminium paste, the meeting during follow-up sintering
Form rear-face contact electrode 6.In addition silver paste region is used as back side extraction electrode 11, back side extraction electrode 11 such as Fig. 5
Shown mark 11.
7) carry out the first heating to be handled, complete to heat in sintering furnace in this embodiment.In the present embodiment
The preferable peak temperature that heats is 750 DEG C.This temperature is actual measurement silicon chip surface temperature.
8) rapid thermal treatment process is carried out.Quickly heated using chain type annealing furnace, 700 DEG C of peak temperature.Its
In more than 600 DEG C time 1min.
In addition, the above embodiment of the present invention is example, has and think with the technology described in claims of the present invention
Want to be allowed to identical structure and play the technical solution of identical action effect, be all contained in the present invention.
Claims (10)
- A kind of 1. preparation method of p-type solar cell, it is characterised in that：Comprise the following steps,Step 1, to the texturing of p-type silicon substrate surface and cleaning；Step 2, carry out pn-junction preparation；Step 3, carry out insulation processing；It is prepared by step 4, the passivation for carrying out smooth surface and antireflective coating；Step 5, in positive and negative graphically form the electrode slurry bed of material comprising conductive compositions；Step 6, carry out the first heat treatment process；Step 7, carry out the second heat treatment process.
- 2. the preparation method of p-type solar cell as claimed in claim 1, it is characterised in that：Pn-junction preparation method in step 2 Source thermal diffusion method, exterior doped source collaboration heat treatment method or ion implanting collaboration method for annealing are taken using gas.
- 3. the preparation method of p-type solar cell as claimed in claim 1, it is characterised in that：The system of the p-type solar cell Preparation Method is additionally included in the deposition step that cell backside is passivated film, and the passivating film at the back side is carried out local to open film and formed Contact window.
- 4. the preparation method of p-type solar cell as claimed in claim 1, it is characterised in that：In step 4, passivation and anti-reflection It is using atomic layer deposition, plasma enhanced chemical vapor deposition process, normal atmosphere vapor deposition method, low pressure gas phase deposition method to penetrate film Or thermal oxidation process is prepared, passivation and antireflective coating are by silica, aluminium oxide, silicon nitride, silicon oxynitride, carborundum, oxygen Change one or more laminations composition in titanium.
- 5. such as the preparation method of claim 1-4 any one of them p-type solar cells, it is characterised in that：In step 5, figure The method that shapeization forms the electrode slurry bed of material is printing process, laser transfer, inkjet printing or 3D printing method.
- 6. such as the preparation method of claim 1-4 any one of them p-type solar cells, it is characterised in that：In step 6, the The peak temperature that one heat treatment process uses is 500 ~ 950 DEG C.
- 7. such as the preparation method of claim 1-4 any one of them p-type solar cells, it is characterised in that：In step 7, the The heat treatment method that two heat treatment processes use uses laser irradiation treatment method or quick heat treatment method.
- 8. the preparation method of p-type solar cell as claimed in claim 7, it is characterised in that：Laser irradiation treatment method is adopted With the large spot once irradiating more than solar cell sizes, or use formula is scanned less than the hot spot of solar-electricity pool area Irradiation, umber of exposures for once and more than.
- 9. the preparation method of p-type solar cell as claimed in claim 7, it is characterised in that：Laser irradiation treatment method makes The wavelength of laser is 300 ~ 1100nm.
- 10. the preparation method of p-type solar cell as claimed in claim 1, it is characterised in that：Second heat treatment process uses The peak temperature that uses of heat treatment method be 600 ~ 1000 DEG C.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110459469A (en) * | 2018-09-25 | 2019-11-15 | 协鑫集成科技股份有限公司 | Sintering method, preparation method, solar battery and the sintering furnace of solar battery |
| CN111446307A (en) * | 2020-04-09 | 2020-07-24 | 上海交通大学 | Laser grooving manufacturing method for maximizing conversion efficiency of solar cell |
| CN115332390A (en) * | 2022-08-12 | 2022-11-11 | 通威太阳能（安徽）有限公司 | Solar cell and preparation method thereof |
Citations (4)
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| CN110459469B (en) * | 2018-09-25 | 2022-05-27 | 协鑫集成科技股份有限公司 | Sintering method and preparation method of solar cell, solar cell and sintering furnace |
| CN111446307A (en) * | 2020-04-09 | 2020-07-24 | 上海交通大学 | Laser grooving manufacturing method for maximizing conversion efficiency of solar cell |
| CN115332390A (en) * | 2022-08-12 | 2022-11-11 | 通威太阳能（安徽）有限公司 | Solar cell and preparation method thereof |
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