CN115332390A - Solar cell and preparation method thereof - Google Patents
Solar cell and preparation method thereof Download PDFInfo
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Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a solar cell and a preparation method thereof. In the preparation method of the solar cell, diffusion and junction making treatment are carried out on a silicon wafer to obtain a prefabricated silicon wafer; forming a passivation film on the back of the prefabricated silicon wafer, forming antireflection films on the surface of the passivation film and the front of the prefabricated silicon wafer, forming electrodes and performing sintering treatment to obtain the solar cell; the sintering treatment comprises pre-sintering treatment and main sintering treatment which are sequentially carried out, wherein when the main sintering treatment is carried out, the temperature of the main sintering treatment is regulated and controlled, so that chemical H bonds existing in the passivation film and/or the antireflection film are broken, formed H is prevented from escaping, and the time of the main sintering treatment is regulated and controlled simultaneously, so that the electrode and the silicon substrate form effective ohmic contact. The preparation method of the solar cell can avoid the generation of EL problem and improve the photoelectric conversion efficiency of the cell.
Description
Technical Field
The invention relates to the technical field of batteries, in particular to a solar battery and a preparation method thereof.
Background
With the gradual depletion of traditional fossil energy, solar energy becomes a hot point of research in recent years as a clean energy with unlimited reserves and environmental protection. The conventional BSF cell (aluminum back field cell) generates much photoelectric loss and thus has a limitation in photoelectric conversion efficiency. PERC (Passivated emitter and Rear Cell) derived from a conventional aluminum back field Cell (BSF) structure, which is collectively called an emitter and Rear Passivated Cell, can capture more sunlight and convert the sunlight into electric energy by forming a passivation layer on the Rear surface, so that the efficiency of the Cell is effectively improved.
The mass production advantage of the low-cost and high-efficiency PERC cell is significant, and the photoelectric loss can be reduced to a great extent, so that the photoelectric conversion efficiency is improved, however, the PERC cell has an EL problem to be solved, that is, when the cell emits EL (Electroluminescence), the cell has a recombination center with weakened luminous intensity, and shows a phenomenon of blackening, and the EL problem can reduce the photoelectric conversion efficiency of the solar cell.
Therefore, the conventional techniques still need to be improved.
Disclosure of Invention
Accordingly, the present invention provides a solar cell and a method for manufacturing the same, which can prevent the occurrence of EL problems and improve the photoelectric conversion efficiency of the cell.
In one aspect of the present invention, a method for manufacturing a solar cell is provided, including the steps of:
performing diffusion and junction making treatment on the silicon wafer to obtain a prefabricated silicon wafer;
forming a passivation film on the back of the prefabricated silicon wafer, forming antireflection films on the surface of the passivation film and the front of the prefabricated silicon wafer, forming electrodes and performing sintering treatment to obtain the solar cell;
and the sintering treatment comprises pre-sintering treatment and main sintering treatment which are sequentially carried out, wherein when the main sintering treatment is carried out, the temperature of the main sintering treatment is regulated and controlled, so that chemical H bonds existing in the passivation film and/or the antireflection film are broken, formed H is prevented from escaping, and the time of the main sintering treatment is regulated and controlled simultaneously, so that the electrode and the silicon substrate form effective ohmic contact.
In some of these embodiments, the temperature of the primary sintering process is not higher than 790 ℃ for not less than 15 seconds.
In some embodiments, the temperature of the main sintering process is 680-750 ℃ and the time is 20-40 s.
In some embodiments, the pre-sintering treatment is carried out at 450-670 ℃ for 30-50 s.
In some of these embodiments, the sintering process is performed in a sintering furnace having a pre-firing zone where the pre-sintering process is performed and a main firing zone where the main sintering process is performed;
the main burning zone comprises n sub-burning zones which are sequentially arranged, wherein n is an integer not less than 4, the temperature of each sub-burning zone is controlled not to be higher than 790 ℃, the time is controlled to be 2-5 s, and the time of the main burning zone is not less than 15s.
In some embodiments, the main sintering zone comprises a first sub-sintering zone, a second sub-sintering zone, a third sub-sintering zone and a fourth sub-sintering zone which are arranged in sequence, the temperatures of the first sub-sintering zone, the second sub-sintering zone, the third sub-sintering zone and the fourth sub-sintering zone are 700 ℃ to 750 ℃, 700 ℃ to 750 ℃ and 680 ℃ to 750 ℃, the sintering time in each corresponding sub-sintering zone is 2s to 5s, 2s to 5s and 2s to 5s, and the time of the main sintering zone is not less than 15s.
In some embodiments, the step of forming the passivation film and/or the step of forming the antireflection film are performed using a plating apparatus;
before the coating treatment for forming the passivation film or the antireflection film, the coating equipment is controlled to pre-run without a workpiece to be coated, wherein the running conditions in the pre-run running program are the same as those in the running program during the coating treatment, and the running conditions include at least one of pressure, gas flow, temperature and electric field intensity.
In some of these embodiments, the coating apparatus is an atomic layer deposition apparatus, and the operating conditions include pressure, gas flow, and temperature; or
The coating equipment is chemical vapor deposition equipment, and the operating conditions comprise pressure, gas flow, temperature and electric field intensity.
In some embodiments, the coating apparatus is an atomic layer deposition apparatus, and the operating procedure of the coating apparatus when performing the coating process is as follows:
step (1), material placement: controlling the temperature to be 190 +/-50 ℃, the pressure of an inner cavity to be 1000mbar, and the material placing time to be 120 +/-50 s;
step (2), vacuumizing: controlling the temperature to be 190 +/-50 ℃, and vacuumizing within 100 +/-50 s until the pressure of an inner cavity is 1mbar;
preheating in step (3): keeping the pressure of the inner cavity at 0.6 +/-0.2 mbar and the pressure of the outer cavity at 8 +/-3 mbar, controlling the temperature at 190 +/-50 ℃, and preheating for 400 +/-50 s;
step (4) film coating: controlling the temperature to be 190 +/-50 ℃, the pressure of an inner cavity to be 0.6 +/-0.2 mbar, the pressure of an outer cavity to be 8 +/-3 mbar, the flow rate of process gas to be 18 +/-3 SCCM, and circulating for 100 +/-50 circles;
breaking vacuum: controlling the temperature to be 190 +/-50 ℃, and breaking vacuum within 120 +/-50 s until the pressure of an inner cavity is 1000mbar;
discharging in step (6): the temperature is controlled to be 190 +/-50 ℃, the pressure in an inner cavity is 1000mbar, and the discharging time is controlled to be 50 +/-30 s.
In some of these embodiments, the process gas comprises trimethylaluminum and ozone.
In some embodiments, the passivation film is made of Al 2 O 3 (ii) a And/or
The antireflection film is a SiNx film.
In some embodiments, after the diffusion junction forming process and before the step of forming a passivation film, the method further includes the steps of:
carrying out PSG removal treatment on the silicon wafer subjected to the diffusion junction making treatment, then carrying out polishing treatment on the back surface of the silicon wafer, and finally carrying out annealing treatment; and/or
Before the diffusion junction making treatment, the method also comprises the following steps:
and texturing the silicon wafer.
In another aspect of the present invention, a solar cell prepared by the above method for preparing a solar cell is provided
In the preparation method of the solar cell, the silicon wafer is subjected to diffusion and junction making treatment to obtain a prefabricated silicon wafer; and then forming a passivation film on the back of the prefabricated silicon chip, forming an antireflection film on the surface of the passivation film and the front of the prefabricated silicon chip, forming an electrode and sintering, wherein in the sintering process, the temperature of the main sintering process is controlled so that chemical H bonds existing in the passivation film and the antireflection film are broken in the main sintering process, thus the dangling bonds and defects of the silicon substrate are passivated again, meanwhile, the passivation defect caused by the escape of H formed by the chemical H bonds is prevented, and meanwhile, the time of the main sintering process is regulated and controlled so as to ensure the effective ohmic contact effect of the electrode and the silicon substrate, thus, the generation probability of a recombination center can be reduced, the generation of an EL problem is avoided, and the photoelectric conversion efficiency of the battery is improved.
Drawings
Fig. 1 is a picture of a PERC cell with EL black edges as obtained in comparative example 1.
Detailed Description
In order that the invention may be more fully understood, preferred embodiments of the invention are now described. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The words "preferably," "more preferably," and the like, in the context of the present invention, refer to embodiments of the invention that may, in some instances, provide certain benefits. However, other embodiments may be preferred, under the same or other circumstances. Furthermore, the recitation of one or more preferred embodiments does not imply that other embodiments are not useful, nor is it intended to exclude other embodiments from the scope of the invention.
When a range of values is disclosed herein, the range is considered to be continuous and includes both the minimum and maximum values of the range, as well as each value between such minimum and maximum values. Further, when a range refers to an integer, each integer between the minimum and maximum values of the range is included. Further, when multiple range-describing features or characteristics are provided, the ranges may be combined. In other words, unless otherwise indicated, all ranges disclosed herein are to be understood to encompass any and all subranges subsumed therein.
In summary, the conventional solar cell has an EL problem to be solved because, in the preparation process of the conventional solar cell, when depositing a back side aluminum oxide passivation film, no tool fixture can completely protect the front side, so that a thin aluminum oxide film is inevitably deposited on the front side of a cell piece in a high-temperature environment in a winding manner, which easily causes a nonuniform chemical passivation on the front side doped surface, thereby causing the EL problem.
Therefore, the photoelectric conversion efficiency of the solar cell in the traditional technology reaches a bottleneck, and is difficult to further improve, and even if the improvement of a few percent is achieved, the improvement is difficult to realize.
In the conventional sintering process of a solar cell, the sintering is mainly performed at a high temperature of 800 ℃ or above for the purpose of effective ohmic contact between an electrode and a silicon substrate, however, the skilled person in the application finds that: the sintering is carried out at the high temperature of 800 ℃ or above, although the effective ohmic contact effect of the electrode and the silicon substrate can be realized, and the chemical H bonds in the passivation film and the antireflection film can be broken, so that the effect of passivating dangling bonds and defects of the silicon substrate again can be achieved, under the high-temperature condition, H formed after the chemical H bonds are broken can rapidly escape out, but the passivation defects are caused to form a composite center, the passivation effect of the passivation film and the antireflection film is reduced, the EL problem can be caused, and the photoelectric conversion efficiency of the solar cell is reduced.
Based on the above research findings, the skilled person in the present application, after a great deal of creative experiments, obtains the preparation method of the solar cell of the present application, which can avoid the generation of the EL problem and improve the photoelectric conversion efficiency of the cell.
An embodiment of the present invention provides a method for manufacturing a solar cell, including the following steps S10 to S20.
And S10, performing diffusion and junction making treatment on the silicon wafer to obtain a prefabricated silicon wafer.
The diffusion junction making process is to generate diffusion layers with different conductive types on a silicon wafer to form a P-N junction so as to realize conversion from optical energy to electric energy.
In some embodiments, the above-mentioned junction formation treatment is performed by a thermal diffusion method, and further, by using phosphorus oxychloride and oxygen.
In some of these embodiments, the silicon wafer is a p-type monocrystalline silicon wafer.
Phosphorus oxychloride reacts with oxygen to generate P 2 O 5 ，P 2 O 5 Reaction with silicon to form SiO 2 And phosphorus is diffused into the silicon wafer to form an N layer on the surface, and the N layer on the surface and the P layer on the substrate form a P-N junction.
Further, the temperature of the above-mentioned junction formation treatment is 750 to 880 ℃.
In some embodiments, before the diffusion junction processing, the following steps are further included:
and (4) texturing the silicon wafer.
After the silicon chip is subjected to texturing treatment, a good textured structure is obtained on the surface, so that the purpose of increasing the specific surface area to receive more photons (energy) is achieved, and meanwhile, the reflection of incident light can be reduced.
The above-mentioned texturing process may adopt a texturing process commonly used in the art, and specific examples include, but are not limited to: etching with an organic solution, for example, etching with tetramethylammonium hydroxide or the like to prepare a texture; the inorganic solvent is used for etching wool, for example, inorganic alkali solution or inorganic acid solution is used, the inorganic alkali can be selected from potassium hydroxide, sodium hydroxide and the like, the inorganic acid is selected from hydrochloric acid and the like, and the solvent in the inorganic alkali solution or inorganic acid solution can be water or alcohol solution such as ethanol and the like.
Further, after the texturing treatment, the method also comprises a step of cleaning the silicon wafer subjected to the texturing treatment so as to clean residual materials adopted in the texturing treatment.
And S20, forming a passivation film on the back of the prefabricated silicon wafer, forming antireflection films on the surface of the passivation film and the front of the prefabricated silicon wafer, forming electrodes, and sintering to obtain the solar cell.
The sintering treatment comprises pre-sintering treatment and main sintering treatment which are sequentially carried out, wherein when the main sintering treatment is carried out, the temperature of the main sintering treatment is regulated and controlled, so that chemical H bonds existing in the passivation film and/or the antireflection film are broken, formed H is prevented from escaping, and the time of the main sintering treatment is regulated and controlled simultaneously, so that the electrode and the silicon substrate form effective ohmic contact.
In the preparation method of the solar cell, diffusion and junction making treatment is carried out on the silicon wafer to obtain a prefabricated silicon wafer; and then forming a passivation film on the back of the prefabricated silicon chip, forming an antireflection film on the surface of the passivation film and the front of the prefabricated silicon chip, forming an electrode and sintering, wherein in the sintering process, the temperature of the main sintering process is controlled so that chemical H bonds existing in the passivation film and the antireflection film are broken in the main sintering process, thus the dangling bonds and defects of the silicon substrate are passivated again, meanwhile, the passivation defect caused by the escape of H formed by the chemical H bonds is prevented, and meanwhile, the time of the main sintering process is regulated and controlled so as to ensure the effective ohmic contact effect of the electrode and the silicon substrate, thus, the generation probability of a recombination center can be reduced, the generation of an EL problem is avoided, and the photoelectric conversion efficiency of the battery is improved.
In some of the embodiments, the temperature of the main sintering treatment is not higher than 790 ℃ and the time is not less than 15s.
The sintering is carried out under the conditions of the temperature and the time, chemical H bonds in the passivation film and the antireflection film can be broken, the effect of passivating dangling bonds and defects of the silicon substrate again is achieved, the passivation defect caused by H escape due to breakage of the chemical H bonds can be avoided simultaneously under the lower temperature condition, and the time of main sintering treatment is prolonged simultaneously, so that the effective ohmic contact effect of the electrode and the silicon substrate is ensured, the generation probability of a recombination center is reduced, the generation of an EL problem is avoided, and the photoelectric conversion efficiency of the cell is improved.
In step S20, there is no specific sequence between the step of forming the anti-reflective film on the surface of the passivation film and the step of forming the anti-reflective film on the front side of the fabricated silicon wafer, and the step of forming the anti-reflective film on the surface of the passivation film and then on the front side of the fabricated silicon wafer may be performed first, or the step of forming the anti-reflective film on the front side of the fabricated silicon wafer and then on the surface of the passivation film may be performed first.
The antireflection film is formed on the front side, so that reflection can be reduced, passivation is achieved, the antireflection film is formed on the surface of the passivation film, reflection on the back side is reduced while the passivation film is protected, and light absorption rate of the battery is improved.
In some embodiments, the temperature of the main sintering treatment is not higher than 680-750 ℃ for not less than 15s.
In some embodiments, the temperature of the main sintering treatment is 680-750 ℃ and the time is 20-40 s.
In some of these embodiments, the sintering process is performed in a sintering furnace having a pre-firing zone for performing the pre-sintering process and a primary firing zone for performing the primary sintering process.
The main sintering area comprises n sub-sintering areas which are sequentially arranged, the temperature of each sub-sintering area is controlled to be not higher than 790 ℃, the time is controlled to be 2-5 s, and n is an integer not less than 4.
In the sintering process of traditional PERC battery, the temperature of main sintering area can reach 800 ℃ and above, set up 3 sintering peaks, but under the high temperature condition, will escape rapidly after the fracture of chemical H bond, cause the passivation defect to form the recombination center on the contrary, reduce the passivation effect of passive film and antireflection film, and then lead to the production of EL problem, and further reduce main sintering temperature in this application, set up 4 and above main sintering peaks, in order to prolong main sintering time, thereby when guaranteeing that electrode and silicon substrate carry out effective ohmic contact effect, reduce the production probability of recombination center, in order to avoid the production of EL problem, improve the yield of the solar cell who makes, and improve solar cell's photoelectric conversion efficiency. In some embodiments, the main sintering zone comprises a first sub-sintering zone, a second sub-sintering zone, a third sub-sintering zone and a fourth sub-sintering zone which are arranged in sequence, the temperatures of the first sub-sintering zone, the second sub-sintering zone, the third sub-sintering zone and the fourth sub-sintering zone are 700-750 ℃, 700-750 ℃ and 680-750 ℃, the sintering time in each corresponding sub-sintering zone is 2-5 s, 2-5 s and 2-5 s, and the time of the main sintering zone is not less than 15s.
It is understood that the time of each sub-sintering zone is independently selected from any one of 2s to 5s, and the time of each sub-sintering zone is adjusted so that the sintering time experienced in the whole main sintering zone is not less than 15s.
Furthermore, the sintering furnace adopts a chain type dynamic sintering furnace, namely, a furnace belt for dynamic transmission is arranged to drive the sintered objects to be sintered through each area, and the time for sintering the sintered objects in each area can be controlled by controlling the transmission speed of the furnace belt.
In some of these embodiments, the transport speed of the oven belt is controlled to be between 9.5min/m and 10.5min/m.
It should be noted that, when sintering is performed in a sintering furnace, the preset temperature in the sintering furnace may not be consistent with the temperature actually reached in the sintering furnace, and a temperature-pulling instrument may be used to determine that the actual temperature of the sintering furnace reaches the required temperature.
In some embodiments, the temperature in the pre-sintering treatment is 450-670 ℃ and the time is 30-50 s.
In some of the embodiments, the pre-sintering zone comprises n1 sub-sintering zones, the sintering time of each sub-sintering zone is controlled to be 2 s-4 s, and n1 is an integer selected from 3-6.
In some of these embodiments, the sintering process further comprises a cooling process performed after the main sintering process step.
Further, the temperature of the cooling treatment is lower than that of the main sintering treatment; further, the temperature can be selected from 600-700 ℃, and the time is 10-30 s.
Further, the sintering furnace also comprises a cooling area for cooling treatment.
In some embodiments, the step of forming the passivation film and/or the step of forming the back antireflection film are performed by using a coating device;
before the coating equipment performs the coating treatment for forming the passivation film and/or the antireflection film, the coating equipment is controlled to perform pre-operation under the condition of no piece to be coated, the operation conditions in the pre-operation program are the same as those in the operation program during the coating treatment, and the operation conditions comprise at least one of pressure, gas flow, temperature and electric field intensity.
The skilled person of the present application finds: the technical personnel research of the application discovers that when the coating equipment is subjected to coating treatment again after being standby or stopped for maintenance for a period of time in the batch production process, the coating effect is unstable because the internal environment of the coating equipment cannot timely reach the environment required by coating, so that when the coating equipment is not subjected to coating treatment, the coating equipment is controlled to pre-operate under the condition that a workpiece to be coated does not exist, at least one operating condition in the pre-operating program is the same as the operating condition in the operating program during coating treatment, and the operating condition comprises at least one of pressure, gas flow, temperature and electric field intensity.
It is understood that the state of the above-described plating apparatus before performing the plating treatment for forming the passivation film and/or the antireflection film includes, but is not limited to, a standby state, a maintenance-down state, and the like. The setting of the pre-running program refers to the setting of the running program during the film coating treatment, and the running conditions in the pre-running program are controlled to be the same as the running conditions in the running program during the film coating treatment, so that the internal environment of the film coating equipment can be kept similar to the internal environment during the film coating when the film coating equipment is standby or stopped, and the stability of the film coating is improved.
It should be noted that the control of the operating conditions in the specific pre-run operating program can be adjusted and controlled according to the type of the specifically used coating equipment.
In some of these embodiments, the coating apparatus is an atomic layer deposition apparatus and the operating conditions include pressure, gas flow, and temperature. Namely, when the coating equipment is atomic layer deposition equipment, the pressure, the gas flow and the temperature in the operation program for controlling the pre-operation are the same as the operation program for coating treatment.
In some embodiments, the coating apparatus is a chemical vapor deposition apparatus, and the operating conditions include pressure, gas flow, temperature, and electric field strength. Namely, when the coating equipment is chemical vapor deposition equipment, the pressure, the gas flow, the temperature and the electric field in the operation program for controlling the pre-operation are the same as the operation program for coating treatment.
In some embodiments, the coating apparatus is an atomic layer deposition apparatus, and the operation procedure of the coating apparatus during the coating process is as follows:
step (1), material placement: controlling the temperature to be 190 +/-50 ℃, the inner cavity pressure to be 1000mbar, and the material placing time to be 120 +/-50 s;
step (2), vacuumizing: controlling the temperature to be 190 +/-50 ℃, and vacuumizing within 100 +/-50 s until the pressure of an inner cavity is 1mbar;
preheating in step (3): keeping the pressure of the inner cavity at 0.6 +/-0.2 mbar and the pressure of the outer cavity at 8 +/-3 mbar, controlling the temperature at 190 +/-50 ℃, and preheating for 400 +/-50 s;
step (4), coating: controlling the temperature to be 190 +/-50 ℃, the inner cavity pressure to be 0.6 +/-0.2 mbar, the outer cavity pressure to be 8 +/-3 mbar, the process gas flow to be 18 +/-3 SCCM, and circulating for 100 +/-50 circles;
breaking vacuum: controlling the temperature to be 190 +/-50 ℃, and breaking vacuum within 120 +/-50 s until the pressure of an inner cavity is 1000mbar;
discharging in step (6): the temperature is controlled to be 190 +/-50 ℃, the pressure in an inner cavity is 1000mbar, and the discharging time is controlled to be 50 +/-30 s.
Similarly, when the coating equipment does not perform coating treatment, the coating equipment is controlled to perform pre-operation under the condition that no piece to be coated exists, and the pre-operation program is the same as the operation program during the coating treatment.
In the step (4), the process gas is a gas material required for coating, including a protective gas or a coating material gas, for example, al 2 O 3 When the passivation film is formed, the process gas comprises trimethyl aluminum and ozone, and the film coating process in the step (4) is as follows:
the temperature is controlled to be 190 +/-50 ℃, the pressure of an inner cavity is 0.6 +/-0.2 mbar, the pressure of an outer cavity is 8 +/-3 mbar, the flow rate of gas trimethylaluminum is 18 +/-3 SCCM 3 The flow is 18 plus or minus 3SCCM, and the circulation is 100 plus or minus 50 circles.
As another example, when forming a SiNx antireflective film, the process gases include ammonia and silane gases.
When a SiNx antireflection film is formed, H bond-containing functional bonds such as N-H/S-H bonds are generated.
In some embodiments, after the diffusion junction forming process and before the step of forming the passivation film, the method further comprises the following steps:
and carrying out PSG removal treatment on the silicon wafer subjected to diffusion junction making treatment, then carrying out polishing treatment on the back surface of the prefabricated silicon wafer, and finally carrying out annealing treatment.
During the diffusion junction formation process, phosphosilicate glass (PSG) remains on the surface and at the edge of the silicon wafer, so that the residual PSG on the surface and at the edge of the silicon wafer needs to be removed.
Further, when a passivation film is formed on the back surface, the surface is required to have good flatness, and therefore, a polishing treatment is performed.
Further, the annealing treatment is performed in the presence of oxygen, and the polished silicon wafer is annealed to form a silicon dioxide layer on the surface thereof.
In some embodiments, the annealing treatment temperature is 650-720 ℃ and the time is 20-40 min.
In some embodiments, the step of forming the electrode employs a screen printing process, and specifically includes the following steps:
laser grooving is carried out on the antireflection film on the back surface, a linear groove with the width of 30-35 microns is formed, silver paste (Ag) is printed and dried to form a back electrode, then, aluminum paste is silk-screened to a region outside the back electrode through silk-screen printing, an aluminum back field is formed through drying, and silver paste (Ag) printing and drying are carried out on the antireflection film on the front surface to form a positive electrode.
Silver-containing pastes are used to form the electrodes, primarily because of the good conductivity, solderability, and low diffusion properties in silicon.
In some embodiments, the method for manufacturing a solar cell further includes:
after the sintering treatment step, the solar cell obtained by the sintering treatment is subjected to an electrical injection and classification detection process.
The electric injection is carried out through a light attenuation furnace or an electric injection furnace, so that the light attenuation of the battery is reduced; the classified detection procedure is to measure the performance parameters of the solar cell by a test instrument and classify the performance parameters according to the electrical performance parameters after the solar cell is manufactured. The parameters to be measured generally include an optimal operating voltage, an optimal operating current, a maximum power (also called a peak power), a conversion efficiency, an open-circuit voltage, a short-circuit current, a fill factor, and the like.
In an embodiment of the invention, a solar cell and a solar cell manufactured by the method for manufacturing the solar cell are provided. The preparation method of the solar cell can avoid the generation of EL problem and improve the photoelectric conversion efficiency of the cell.
While the present invention will be described with respect to particular embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but is intended to cover by the appended claims the scope of the invention, and that certain changes in the embodiments of the invention will be suggested to those skilled in the art and are intended to be covered by the appended claims.
The following are specific examples.
Example 1
(1) Carrying out diffusion junction making treatment on the monocrystalline silicon wafer subjected to the texturing treatment: carrying out thermal diffusion on phosphorus oxychloride and oxygen to form a P-N junction, then cleaning and removing residual phosphorosilicate glass on the surface and the edge of a silicon wafer through an etching process, polishing the back, and finally annealing for 40min at 700 ℃ under the condition of oxygen.
(2) Coating the back of the silicon wafer by adopting atomic layer deposition equipment to form Al 2 O 3 Passivation film, the operating procedure is as follows:
step (1), material placement: controlling the temperature to be 190 +/-50 ℃, the pressure of an inner cavity to be 1000mbar, and the material placing time to be 120 +/-50 s;
step (2), vacuumizing: controlling the temperature to be 190 +/-50 ℃, and vacuumizing within 100 +/-50 s until the pressure of an inner cavity is 1mbar;
preheating in step (3): keeping the pressure of the inner cavity at 0.6 +/-0.2 mbar and the pressure of the outer cavity at 8 +/-3 mbar, controlling the temperature at 190 +/-50 ℃, and preheating for 400 +/-50 s;
step (4), coating: controlling the temperature to be 190 +/-50 ℃, the pressure of an inner cavity to be 0.6 +/-0.2 mbar, the pressure of an outer cavity to be 8 +/-3 mbar, the flow rate of trimethyl aluminum gas to be 18 +/-3 SCCM, the flow rate of ozone gas to be 18 +/-3 SCCM, and circulating for 100 +/-50 circles;
breaking vacuum: controlling the temperature to be 190 +/-50 ℃, and breaking vacuum within 120 +/-50 s until the pressure of an inner cavity is 1000mbar;
discharging in step (6): the temperature is controlled to be 190 +/-50 ℃, the pressure in an inner cavity is 1000mbar, and the discharging time is controlled to be 50 +/-30 s.
And then respectively depositing a layer of silicon nitride film on the front surface of the silicon wafer and the surface of the aluminum oxide passivation film by adopting PECVD equipment, wherein the specific operation equation is as follows: siH4+ NH3 → SixNyHz, the main operation steps and the reaction conditions are as follows:
step (1), opening a furnace door and entering a boat: the time is 60-120s, the temperature is 480-560 ℃, the nitrogen gas is 100 sccm-2000 sccm, and the pressure is 10000mttor;
step (2) heating: the time is 300-500 s, the temperature is 480-560 ℃, and the pressure is 10000mttor;
and (3) keeping constant temperature: the time is 200-300 s, the temperature is 480-560 ℃, and the pressure is 10000mttor;
step (4), vacuumizing: the time is 200-400 s, the temperature is 480-560 ℃, and the pressure is 0mttor;
step (5), leakage detection: the time is 20 s-60 s, the temperature is 480-560 ℃, and the pressure is 10000mttor;
step (6) vacuumizing: the time is 20 s-60 s, the temperature is 480-560 ℃, and the pressure is 0mttor;
step (7) of pre-venting gas: the time is 10 s-30 s, the temperature is 480-560 ℃, the pressure is 1000-2000 mttor, the silane is 600-2000 sccm, the ammonia gas is 4000-8000 sccm, the power is 0, and the duty ratio is 0;
step (8) deposition: the time is 500-1000 s, the temperature is 480-560 ℃, the pressure is 1000-2000 mttor, the ammonia gas is 4000-8000 sccm, the silane is 500-2000 sccm, the power is 8000 w-20000 w, and the pulse switch ratio is 1/8-1/20;
step (15) vacuum pumping: the time is 20 s-60 s, the temperature is 480-560 ℃, and the pressure is 0mttor;
step (16) nitrogen purging: the time is 20 s-60 s, the temperature is 480-560 ℃, the pressure is 10000mttor, and the nitrogen gas is 8000-20000sccm;
step (17) vacuum pumping: the time is 20 s-60 s, the temperature is 480-560 ℃, and the pressure is 0mttor;
step (18) breaking vacuum: the time is 60 s-150 s, the temperature is 480-560 ℃, the pressure is 10000mttor, and the nitrogen gas is 8000 sccm-20000 sccm;
step (19) opening a furnace door and discharging: the time is 60-120s, the temperature is 480-560 ℃, the nitrogen is 100-2000sccm, and the pressure is 10000mttor.
(3) And (3) slotting the back surface by using laser, forming a linear slot with the width of 30-35 micrometers, then screen-printing silver paste (Ag), drying to form a back electrode, then screen-printing aluminum paste to a region outside the electrode, drying to form an aluminum back field, and then performing silver paste (Ag) printing and drying on the antireflection film on the front surface to form a positive electrode to obtain the prefabricated battery.
And then placing the prefabricated battery on a transmission furnace belt of a chain type dynamic sintering furnace, enabling the prefabricated battery to enter the sintering furnace for sintering treatment, and sequentially passing through a pre-sintering area, a main sintering area and a cooling area, wherein the pre-sintering area comprises a pre-sintering first area, a pre-sintering second area and a pre-sintering third area which are sequentially arranged, the actual temperature of each area is controlled to be 450 ℃, 560 ℃ and 660 ℃ through a temperature pulling instrument, and meanwhile, the sintering time is controlled to be 5s, 5s and 5s sequentially through controlling the speed of the transmission furnace belt.
The main sintering area comprises a first sub-sintering area, a second sub-sintering area, a third sub-sintering area and a fourth sub-sintering area which are sequentially arranged, the actual temperatures of the first sub-sintering area, the second sub-sintering area, the third sub-sintering area and the fourth sub-sintering area are respectively controlled to be 730 ℃, 730 ℃ and 700 ℃ through a temperature-pulling instrument, and meanwhile, the sintering time is controlled to be 5s, 5s and 5s sequentially through controlling the speed of a conveying furnace belt.
The temperature of the cooling zone is more than 600 ℃ and less than 700 ℃, and the cooling time is controlled to be 30s by controlling the speed of the conveying furnace belt.
And placing the sintered cell in a light decay furnace for electric injection to obtain the solar cell.
And (3) repeatedly performing the steps (1) to (3) to prepare 13965 (pcs) solar cells, wherein in the steps of forming the passivation film and forming the back antireflection film in the step (2), when the coating equipment does not perform coating treatment, the coating equipment is controlled to perform pre-operation under the condition that no piece to be coated exists, and the operation program of the pre-operation is the same as that of the coating treatment.
(4) The method for analyzing and detecting the prepared solar cell specifically comprises the following steps:
1. performing EL detection on the prepared solar cell, observing whether the solar cell has a black edge phenomenon, recording the solar cell with the black edge phenomenon as a defective product, and calculating the reject ratio according to the following formula:
reject ratio = number of defective products/total number of solar cells × 100%
See table 1 for specific results.
2. The photovoltaic performance of the prepared solar cell without the black edge phenomenon is tested, the average value of each parameter is calculated, and the specific test refers to the first-level standard of the conversion efficiency of the Chinese metrological scientific research institute, and the result is shown in table 1.
Wherein, uoc is open circuit voltage (mV), isc: short-circuit current (a), FF: fill factor, eta: light conversion efficiency (%), rs: series resistance, rsh: parallel resistance, irev2: the current is reversed.
Example 2
Example 2 is essentially the same as example 1, except that: example 1 in step (3), the actual temperatures of the first sub-sintering zone, the second sub-sintering zone, the third sub-sintering zone and the fourth sub-sintering zone were controlled to 700 ℃, 700 ℃ and 680 ℃, respectively, and the sintering time was controlled to 5s, 5s and 5s in this order. The temperature of the cooling zone is more than 600 ℃ and less than 680 DEG C
The rest of the procedure was the same as in example 1.
Example 3
Example 3 is essentially the same as example 1, except that: in the step (3) of example 1, the actual temperatures of the first sub-sintering zone, the second sub-sintering zone, the third sub-sintering zone and the fourth sub-sintering zone were controlled to 780 ℃, 780 ℃ and 780 ℃, respectively, and the sintering time was controlled to 4s, 4s and 4s in this order.
The rest of the procedure was the same as in example 1.
Example 4
Example 4 is essentially the same as example 1, except that: example 4 when the above-described steps (1) to (3) were repeatedly performed to manufacture 13965 pieces (pcs) solar cells, wherein, in the steps of forming the passivation film and forming the back anti-reflection film, no pre-operation was performed while the plating apparatus was performing the plating process.
The rest of the procedure was the same as in example 1.
Comparative example 1
Comparative example 1 is substantially the same as example 1 except that: the pre-sintering area comprises a pre-sintering first area, a pre-sintering second area, a pre-sintering third area and a pre-sintering fourth area which are sequentially arranged, the actual temperature of each area is controlled to be 450 ℃, 520 ℃, 590 ℃ and 660 ℃ through a temperature pulling instrument, and meanwhile, the sintering time is controlled to be 5s, 5s and 5s sequentially through controlling the speed of a conveying furnace belt.
The main sintering area comprises a first sub-sintering area, a second sub-sintering area and a third sub-sintering area which are sequentially arranged, the actual temperatures of the first sub-sintering area, the second sub-sintering area and the third sub-sintering area are controlled to be 820 ℃, 820 ℃ and 820 ℃ respectively through a temperature pulling instrument, and meanwhile, the sintering time is controlled to be 4s, 4s and 4s sequentially through controlling the speed of a conveying furnace zone.
The rest of the procedure was the same as in example 1.
The results of the examples and comparative examples are shown in Table 1.
TABLE 1
In the case of the graph of the PERC cell having the EL black edge obtained in comparative example 1, as shown in fig. 1, the EL black edge phenomenon occurred in the different regions of the edge of the PERC cell in fig. 1 (a) and (b).
As can be seen from the data in the table 1, by adopting the technical scheme of the application, the generation of the EL problem can be avoided, the probability of the produced solar cell having the EL black edge is reduced, and meanwhile, the photoelectric conversion efficiency of the cell is improved.
All possible combinations of the technical features of the above embodiments may not be described for the sake of brevity, but should be considered as within the scope of the present disclosure as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (13)
1. A preparation method of a solar cell is characterized by comprising the following steps:
performing diffusion junction making treatment on the silicon wafer to obtain a prefabricated silicon wafer;
forming a passivation film on the back of the prefabricated silicon wafer, forming antireflection films on the surface of the passivation film and the front of the prefabricated silicon wafer, forming electrodes and performing sintering treatment to obtain the solar cell;
the sintering treatment comprises pre-sintering treatment and main sintering treatment which are sequentially carried out, wherein when the main sintering treatment is carried out, the temperature of the main sintering treatment is regulated and controlled, so that chemical H bonds in the passivation film and/or the antireflection film are broken, formed H is prevented from escaping, and the time of the main sintering treatment is regulated and controlled simultaneously, so that the electrode and the silicon substrate form effective ohmic contact.
2. The method of claim 1, wherein the temperature of the main sintering process is not higher than 790 ℃ for not less than 15s.
3. The method for manufacturing a solar cell according to any one of claims 1 to 2, wherein the temperature of the primary sintering treatment is 680 ℃ to 750 ℃ for 20s to 40s.
4. The method for manufacturing a solar cell according to any one of claims 1 to 2, wherein the pre-sintering treatment is performed at a temperature of 450 ℃ to 670 ℃ for a time of 30s to 50s.
5. The method for producing a solar cell according to any one of claims 1 to 2, wherein the sintering treatment is performed in a sintering furnace having a pre-firing zone in which the pre-sintering treatment is performed and a main firing zone in which the main sintering treatment is performed;
the main burning zone comprises n sub-burning zones which are sequentially arranged, wherein n is an integer not less than 4, the temperature of each sub-burning zone is controlled not to be higher than 790 ℃, the time is controlled to be 2-5 s, and the time of the main burning zone is not less than 15s.
6. The method according to claim 5, wherein the main firing zone comprises a first sub-firing zone, a second sub-firing zone, a third sub-firing zone and a fourth sub-firing zone which are arranged in this order, the temperatures of the first sub-firing zone, the second sub-firing zone, the third sub-firing zone and the fourth sub-firing zone are 700 ℃ to 750 ℃, 700 ℃ to 750 ℃ and 680 ℃ to 750 ℃, the firing times in the respective sub-firing zones are 2s to 5s, 2s to 5s and 2s to 5s, respectively, and the time of the main firing zone is not less than 15s.
7. The method for producing a solar cell according to any one of claims 1 to 2, wherein the step of forming a passivation film and/or the step of forming an antireflection film are performed using a plating apparatus;
before the coating treatment for forming the passivation film or the antireflection film, the coating equipment is controlled to pre-run without a workpiece to be coated, wherein the running conditions in the pre-run running program are the same as those in the running program during the coating treatment, and the running conditions include at least one of pressure, gas flow, temperature and electric field intensity.
8. The method according to claim 7, wherein the coating apparatus is an atomic layer deposition apparatus, and the operating conditions include pressure, gas flow rate, and temperature; or
The coating equipment is chemical vapor deposition equipment, and the operating conditions comprise pressure, gas flow, temperature and electric field intensity.
9. The method for manufacturing a solar cell according to claim 7, wherein the coating apparatus is an atomic layer deposition apparatus, and an operation procedure of the coating apparatus when performing the coating process is as follows:
step (1), material placement: controlling the temperature to be 190 +/-50 ℃, the pressure of an inner cavity to be 1000mbar, and the material placing time to be 120 +/-50 s;
step (2), vacuumizing: controlling the temperature to be 190 +/-50 ℃, and vacuumizing within 100 +/-50 s until the pressure of an inner cavity is 1mbar;
preheating in step (3): keeping the pressure of the inner cavity at 0.6 +/-0.2 mbar and the pressure of the outer cavity at 8 +/-3 mbar, controlling the temperature at 190 +/-50 ℃, and preheating for 400 +/-50 s;
step (4), coating: controlling the temperature to be 190 +/-50 ℃, the pressure of an inner cavity to be 0.6 +/-0.2 mbar, the pressure of an outer cavity to be 8 +/-3 mbar, the flow rate of process gas to be 18 +/-3 SCCM, and circulating for 100 +/-50 circles;
breaking vacuum: controlling the temperature to be 190 +/-50 ℃, and breaking vacuum within 120 +/-50 s until the pressure of an inner cavity is 1000mbar;
discharging in step (6): the temperature is controlled to be 190 +/-50 ℃, the pressure in an inner cavity is 1000mbar, and the discharging time is controlled to be 50 +/-30 s.
10. The method of claim 9, wherein the process gas comprises trimethylaluminum and ozone.
11. The method according to any one of claims 1 to 2, wherein the passivation film is made of Al 2 O 3 (ii) a And/or
The antireflection film is a SiNx film.
12. The method for manufacturing a solar cell according to any one of claims 1 to 2, further comprising, after the diffusion junction formation treatment and before the step of forming a passivation film, the steps of:
carrying out PSG removal treatment on the silicon wafer subjected to the diffusion junction making treatment, then carrying out polishing treatment on the back surface of the silicon wafer, and finally carrying out annealing treatment; and/or
Before the diffusion junction making treatment, the method also comprises the following steps:
and texturing the silicon wafer.
13. A solar cell produced by the method for producing a solar cell according to any one of claims 1 to 12.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210969847.5A CN115332390A (en) | 2022-08-12 | 2022-08-12 | Solar cell and preparation method thereof |
| PCT/CN2023/084369 WO2024032005A1 (en) | 2022-08-12 | 2023-03-28 | Solar cell and preparation method therefor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117393654A (en) * | 2023-12-06 | 2024-01-12 | 浙江晶科能源有限公司 | Photovoltaic cell preparation method and photovoltaic cell |
| WO2024032005A1 (en) * | 2022-08-12 | 2024-02-15 | 通威太阳能（安徽）有限公司 | Solar cell and preparation method therefor |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090188550A1 (en) * | 2008-01-25 | 2009-07-30 | Samsung Sdi Co., Ltd. | Solar cell and method for manufacturing the same |
| US20130000716A1 (en) * | 2009-11-27 | 2013-01-03 | Wuxi Suntech Power Co., Ltd. | Manufacturing method of front electrode of solar cell |
| CN104966761A (en) * | 2015-07-08 | 2015-10-07 | 四川银河星源科技有限公司 | Manufacturing method of crystalline silicon solar cell |
| CN107993940A (en) * | 2017-10-31 | 2018-05-04 | 泰州隆基乐叶光伏科技有限公司 | The preparation method of p-type solar cell |
| CN109473504A (en) * | 2017-09-06 | 2019-03-15 | 镇江大全太阳能有限公司 | A kind of production method of two-sided aluminium oxide passivation rear side local contact high efficiency crystal silicon solar energy battery |
| CN110459469A (en) * | 2018-09-25 | 2019-11-15 | 协鑫集成科技股份有限公司 | Sintering method, preparation method, solar battery and the sintering furnace of solar battery |
| CN110828607A (en) * | 2019-08-27 | 2020-02-21 | 横店集团东磁股份有限公司 | Preparation method of high-conversion-efficiency SE-PERC solar cell |
| CN112670370A (en) * | 2020-12-24 | 2021-04-16 | 横店集团东磁股份有限公司 | Sintering method and application of solar cell |
| CN113013291A (en) * | 2021-02-19 | 2021-06-22 | 横店集团东磁股份有限公司 | PERC double-sided battery and sintering method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009034594A1 (en) * | 2009-02-24 | 2010-08-26 | Bosch Solar Energy Ag | Crystalline silicon solar cell producing method, involves covering aluminum-thin film at edge side and slightly covering rear-sided bus bar during coating process, and sintering aluminum-thick film by temperature treatment process |
| KR20130011696A (en) * | 2011-07-22 | 2013-01-30 | 에스티엑스 솔라주식회사 | Electrode of solar cell and method for menufacture the same |
| CN112825340B (en) * | 2019-11-15 | 2022-08-19 | 苏州阿特斯阳光电力科技有限公司 | Passivated contact battery and preparation method and application thereof |
| CN115332390A (en) * | 2022-08-12 | 2022-11-11 | 通威太阳能（安徽）有限公司 | Solar cell and preparation method thereof |
-
2022
- 2022-08-12 CN CN202210969847.5A patent/CN115332390A/en active Pending
-
2023
- 2023-03-28 WO PCT/CN2023/084369 patent/WO2024032005A1/en unknown
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090188550A1 (en) * | 2008-01-25 | 2009-07-30 | Samsung Sdi Co., Ltd. | Solar cell and method for manufacturing the same |
| US20130000716A1 (en) * | 2009-11-27 | 2013-01-03 | Wuxi Suntech Power Co., Ltd. | Manufacturing method of front electrode of solar cell |
| CN104966761A (en) * | 2015-07-08 | 2015-10-07 | 四川银河星源科技有限公司 | Manufacturing method of crystalline silicon solar cell |
| CN109473504A (en) * | 2017-09-06 | 2019-03-15 | 镇江大全太阳能有限公司 | A kind of production method of two-sided aluminium oxide passivation rear side local contact high efficiency crystal silicon solar energy battery |
| CN107993940A (en) * | 2017-10-31 | 2018-05-04 | 泰州隆基乐叶光伏科技有限公司 | The preparation method of p-type solar cell |
| CN110459469A (en) * | 2018-09-25 | 2019-11-15 | 协鑫集成科技股份有限公司 | Sintering method, preparation method, solar battery and the sintering furnace of solar battery |
| CN110828607A (en) * | 2019-08-27 | 2020-02-21 | 横店集团东磁股份有限公司 | Preparation method of high-conversion-efficiency SE-PERC solar cell |
| CN112670370A (en) * | 2020-12-24 | 2021-04-16 | 横店集团东磁股份有限公司 | Sintering method and application of solar cell |
| CN113013291A (en) * | 2021-02-19 | 2021-06-22 | 横店集团东磁股份有限公司 | PERC double-sided battery and sintering method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024032005A1 (en) * | 2022-08-12 | 2024-02-15 | 通威太阳能（安徽）有限公司 | Solar cell and preparation method therefor |
| CN117393654A (en) * | 2023-12-06 | 2024-01-12 | 浙江晶科能源有限公司 | Photovoltaic cell preparation method and photovoltaic cell |
| CN117393654B (en) * | 2023-12-06 | 2024-04-09 | 浙江晶科能源有限公司 | Photovoltaic cell preparation method and photovoltaic cell |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024032005A9 (en) | 2024-03-14 |
| WO2024032005A1 (en) | 2024-02-15 |
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