CN107946381A - The preparation method of electrode of solar battery - Google Patents
The preparation method of electrode of solar battery Download PDFInfo
- Publication number
- CN107946381A CN107946381A CN201711044952.3A CN201711044952A CN107946381A CN 107946381 A CN107946381 A CN 107946381A CN 201711044952 A CN201711044952 A CN 201711044952A CN 107946381 A CN107946381 A CN 107946381A
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- China
- Prior art keywords
- electrode
- preparation
- solar battery
- heat treatment
- solar cell
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 40
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 239000011267 electrode slurry Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 5
- 230000001678 irradiating effect Effects 0.000 claims description 8
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims 1
- 238000005245 sintering Methods 0.000 abstract description 14
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000002002 slurry Substances 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 230000000149 penetrating effect Effects 0.000 description 4
- 230000000415 inactivating effect Effects 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention provides a kind of preparation method of electrode of solar battery, graphical to form the electrode slurry bed of material for including conductive compositions；And to integrally carrying out the first heat treatment process process comprising the semiconductor base including the above-mentioned electrode slurry bed of material；And the second heat treatment process is carried out to the region of the above-mentioned electrode slurry bed of material.The preparation method of this kind of electrode of solar battery, can reduce sintering temperature, can reduce the contact resistance and series resistance of battery electrode, can widen battery sintering process window, so as to reach more preferable battery conversion efficiency.
Description
Technical field
The present invention relates to a kind of preparation method of electrode of solar battery.
Background technology
At present, gradually exhausting with fossil energy, solar cell is as new energy substitution scheme, using increasingly
Extensively.Solar cell is the device that the luminous energy of the sun is converted to electric energy.Solar cell is produced using photogenic voltage principle
Carrier, is then drawn carrier using electrode, so as to be beneficial to efficiently use electric energy.
In the step of solar cell used at present, after the coating of patterned conductive slurry is formed, one can be carried out
High temperature sintering step.In addition the prior art of currently manufactured solar cell has a disadvantage that：1. sintering temperature is excessive, so that shadow
Ring the transfer efficiency of battery；2. traditional is once sintered, the inactivating performance at electrode is not high；3. traditional once sintered, battery
The contact resistance of electrode and series resistance etc. are higher.
The content of the invention
A kind of preparation method the object of the present invention is to provide electrode of solar battery solves burning existing in the prior art
Junction temperature is excessive, so as to influence the transfer efficiency of battery, the once sintered inactivating performance that causes at electrode is not high, battery electrode
The problem of contact resistance and series resistance etc. are higher.
The present invention technical solution be：
A kind of preparation method of electrode of solar battery, comprises the following steps,
It is graphical to form the electrode slurry bed of material for including conductive compositions；And
To integrally carrying out the first heat treatment process process comprising the semiconductor base including the above-mentioned electrode slurry bed of material；And
Second heat treatment process is carried out to the region of the above-mentioned electrode slurry bed of material.
Further, the peak temperature that the first heat treatment process uses is 600 ~ 900 DEG C.
Further, the second heat treatment process uses laser irradiating method, the ripple for the laser that laser irradiating method uses
Length is 300 ~ 1100nm.
Further, in laser irradiating method, the spot size of laser irradiation, which uses, is less than or equal to solar cell grid
The hot spot of line width is scanned formula irradiation, or is scanned formula irradiation, spoke using the width more than solar cell grid line
Used according to number more than once.
Further, in laser irradiating method, irradiation scan mode use along grid line direction carry out, or using perpendicular to
Grid line direction carries out.
Further, the preparation method kind of the electrode of solar battery, solar cell are p-type solar cell or N-shaped
Solar cell.
The preparation method of this kind of electrode of solar battery, by completing at least emitter preparation and medium film preparation
Semiconductor on, it is graphical to form the electrode slurry bed of material for including conductive compositions, then pass through heat treatment more than two steps or two steps
Process, is done directly the formation of electrode.
The beneficial effects of the invention are as follows：The preparation method of this kind of electrode of solar battery, can reduce sintering temperature, can
The contact resistance and series resistance of battery electrode are reduced, battery sintering process window can be widened, so as to reach more preferable battery
Transfer efficiency.Since battery is printed with after slurry is in before sintering step or sinters, it is also necessary at laser irradiation local heat
Reason method, thus in sintering process and need not be too high temperature can complete to sinter.By existing comprising laser irradiation
After interior processing procedure, preferable contact is formd.And the contact that this mode is formed, connects relative to what a high temperature was formed
Touch, there is lower contact resistance.In addition, this processing procedure causes in first step sintering process, can be in the model of bigger
Interior selection sintering temperature is enclosed, there is broader process window.
Brief description of the drawings
Fig. 1 is the flow diagram of the preparation method of electrode of solar battery of the embodiment of the present invention；
Fig. 2 is the schematic diagram that electrode is formed in embodiment.Wherein, a is the profile for the semiconductor that there is deielectric-coating on surface, and a1 is table
There is the top view of the semiconductor of deielectric-coating in face, and b is the profile that top layer is coated with electrocondution slurry, and b1 is coated with conductive paste for top layer
The top view of material, c are the profile that electrode zone forms the contact structures for penetrating deielectric-coating after laser irradiates, and c1 is warp
Cross the top view that electrode zone after laser irradiates forms the contact structures for penetrating deielectric-coating.
Wherein：1- semiconductors, 2- deielectric-coating, the 3- electrode slurry bed of materials, the electrode that 4- second is formed after being heat-treated.
Embodiment
The preferred embodiment that the invention will now be described in detail with reference to the accompanying drawings.
Embodiment
A kind of preparation method of electrode of solar battery, in half for having completed surface-texturing, prepared by emitter, being passivated
It is graphical to form the electrode slurry bed of material 3 for including conductive compositions in 1 substrate of conductor；First heat treatment process；Second is heat treated
Journey；Wherein the first heat treatment process and the second heat treatment process can be with exchange sequences.Above electrode preparation method, contact resistance
Small, inactivating performance is good, and has wider process window.
One embodiment of the electrode preparation method of solar cell, such as Fig. 1 for this below, it is specific as follows：
The first step, by direct applying conductive on the surface of the semi-finished product for 1 solar cell of semiconductor for needing to prepare electrode
The method of slurry completes the graphical distribution of conductive layer.Selection carries out the painting of electrocondution slurry in smooth surface and the back side in embodiment
Cloth, graphical distribution has been carried out using screen printing mode, and different types of electrocondution slurry has been used on two sides, and front makes
Contain the part such as main grid and thin grid with for the silver paste that contains containing frit, positive figure.The slurry at the back side is aluminium paste,
In addition silver paste region is used as extraction electrode.
Second step, completes to heat in sintering furnace.600-800 DEG C of heat spike temperature.This temperature is actual measurement silicon chip
Surface temperature.It is 650 DEG C preferably to heat peak temperature in the present embodiment.
3rd step, laser irradiation is carried out to the obverse and reverse of above-mentioned finished product.The spot size of laser irradiation can be adopted
With the width only slight beyond solar cell grid line, the grid line of battery front side is irradiated, forms shape after the second heat treatment
Into electrode 4, the back side then without carry out laser radiation treatment.And the regional of grid line is completed in one-time process flow
Scanning and irradiation.Wherein the wavelength of irradiation laser is 532nm, spot diameter 90um, sweep speed 10000mm/s-
20000mm/s.Scan mode is that continuously grid line is scanned.
Fig. 2 shown when preparing this solar cell method, the situation of change of electrocondution slurry and deielectric-coating 2.A in Fig. 2
There is the profile of the semiconductor 1 of deielectric-coating 2 for surface, a1 is the top view for the semiconductor 1 that there is deielectric-coating 2 on surface in Fig. 2, Fig. 2
Middle b is the profile that top layer is coated with electrocondution slurry, and b1 is the top view that top layer is coated with electrocondution slurry in Fig. 2, and c is in Fig. 2
Electrode zone forms the profile for the contact structures for penetrating deielectric-coating 2 after laser irradiates, and c1 is by laser spoke in Fig. 2
The top view for the contact structures for penetrating deielectric-coating 2 is formd according to rear electrode zone.By laser irradiation area electrodes slurry and
Semiconductor 11 forms contact.Wherein semiconductor 1, can be emitter or surface field.In the present embodiment to surface field and
Electrode slurry region on emitter carries out laser irradiation.
Because battery is printed with after slurry is in before sintering step or sinters, it is also necessary to is irradiated, therefore is being burnt by laser
During knot and need not be too high temperature can complete to sinter.After being irradiated by laser, preferable contact is formd.And
And the contact that this mode is formed, the contact formed relative to a high temperature, has lower contact resistance.In addition, at this
Reason process causes in first step sintering process, can select sintering temperature in the larger context, there is broader process window.
In addition, the above embodiment of the present invention is example, has and think with the technology described in claims of the present invention
Want to be allowed to identical structure and play the technical solution of identical action effect, be all contained in the present invention.
Claims (6)
- A kind of 1. preparation method of electrode of solar battery, it is characterised in that：Comprise the following steps,It is graphical to form the electrode slurry bed of material for including conductive compositions；AndTo integrally carrying out the first heat treatment process process comprising the semiconductor base including the above-mentioned electrode slurry bed of material；AndSecond heat treatment process is carried out to the region of the above-mentioned electrode slurry bed of material.
- 2. the preparation method of electrode of solar battery as claimed in claim 1, it is characterised in that：First heat treatment process uses Peak temperature be 600 ~ 900 DEG C.
- 3. the preparation method of electrode of solar battery as claimed in claim 1, it is characterised in that：Second heat treatment process uses Laser irradiating method, the wavelength for the laser that laser irradiating method uses is 300 ~ 1100nm.
- 4. the preparation method of electrode of solar battery as claimed in claim 3, it is characterised in that：In laser irradiating method, swash The spot size of light irradiation uses the hot spot less than or equal to solar cell grid line width to be scanned formula irradiation, or uses Width more than solar cell grid line is scanned formula irradiation, and umber of exposures is used more than once.
- 5. the preparation method of electrode of solar battery as claimed in claim 4, it is characterised in that：In laser irradiating method, spoke Use along grid line direction and carry out according to scan mode, or carried out using perpendicular to grid line direction.
- 6. such as the preparation method of claim 1-5 any one of them electrode of solar battery, it is characterised in that：The solar-electricity The preparation method kind of pond electrode, solar cell are p-type solar cell or N-shaped solar cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711044952.3A CN107946381A (en) | 2017-10-31 | 2017-10-31 | The preparation method of electrode of solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711044952.3A CN107946381A (en) | 2017-10-31 | 2017-10-31 | The preparation method of electrode of solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107946381A true CN107946381A (en) | 2018-04-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201711044952.3A Pending CN107946381A (en) | 2017-10-31 | 2017-10-31 | The preparation method of electrode of solar battery |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110212039A (en) * | 2019-05-30 | 2019-09-06 | 江苏欧达丰新能源科技发展有限公司 | The method that laser sintered tinsel prepares the thin gate line electrode of photovoltaic cell |
| CN110854216A (en) * | 2019-10-30 | 2020-02-28 | 上海润势科技有限公司 | Method for improving contact resistance and conductivity of HIT battery electrode and electrode manufacturing method |
| CN111063767A (en) * | 2019-12-26 | 2020-04-24 | 天津爱旭太阳能科技有限公司 | Solar cell and method for manufacturing same |
| CN115020523A (en) * | 2022-06-29 | 2022-09-06 | 浙江晶科能源有限公司 | Solar cell unit, preparation method thereof and solar cell module |
| CN115148837A (en) * | 2022-06-29 | 2022-10-04 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof and photovoltaic module |
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| CN101540349A (en) * | 2009-04-27 | 2009-09-23 | 中山大学 | Aluminized BSF secondary sintering technology for crystal silicon solar cell |
| CN101546790A (en) * | 2009-04-24 | 2009-09-30 | 中山大学 | Method for preparing point contact electrode at back of solar cell by utilizing laser induced thermit reaction |
| CN102263164A (en) * | 2011-07-06 | 2011-11-30 | 杨雪 | Manufacturing technology for contact alloying of meal-semiconductor of silicon solar battery |
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2017
- 2017-10-31 CN CN201711044952.3A patent/CN107946381A/en active Pending
Patent Citations (4)
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| CN101447518A (en) * | 2008-12-31 | 2009-06-03 | 江苏艾德太阳能科技有限公司 | Ant-apex contact heterojunction solar battery and preparation method thereof |
| CN101546790A (en) * | 2009-04-24 | 2009-09-30 | 中山大学 | Method for preparing point contact electrode at back of solar cell by utilizing laser induced thermit reaction |
| CN101540349A (en) * | 2009-04-27 | 2009-09-23 | 中山大学 | Aluminized BSF secondary sintering technology for crystal silicon solar cell |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110212039A (en) * | 2019-05-30 | 2019-09-06 | 江苏欧达丰新能源科技发展有限公司 | The method that laser sintered tinsel prepares the thin gate line electrode of photovoltaic cell |
| CN110854216A (en) * | 2019-10-30 | 2020-02-28 | 上海润势科技有限公司 | Method for improving contact resistance and conductivity of HIT battery electrode and electrode manufacturing method |
| CN110854216B (en) * | 2019-10-30 | 2021-10-01 | 上海润势科技有限公司 | Method for improving contact resistance and conductivity of HIT battery electrode and electrode manufacturing method |
| CN111063767A (en) * | 2019-12-26 | 2020-04-24 | 天津爱旭太阳能科技有限公司 | Solar cell and method for manufacturing same |
| CN115020523A (en) * | 2022-06-29 | 2022-09-06 | 浙江晶科能源有限公司 | Solar cell unit, preparation method thereof and solar cell module |
| CN115148837A (en) * | 2022-06-29 | 2022-10-04 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof and photovoltaic module |
| CN115020523B (en) * | 2022-06-29 | 2023-09-12 | 浙江晶科能源有限公司 | Solar cell unit, preparation method thereof and solar cell module |
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Application publication date: 20180420 |
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