CN106409978A - Preparation method of P-type single crystal solar cell - Google Patents
Preparation method of P-type single crystal solar cell Download PDFInfo
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- CN106409978A CN106409978A CN201611036687.XA CN201611036687A CN106409978A CN 106409978 A CN106409978 A CN 106409978A CN 201611036687 A CN201611036687 A CN 201611036687A CN 106409978 A CN106409978 A CN 106409978A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000013078 crystal Substances 0.000 title abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 54
- 239000010703 silicon Substances 0.000 claims abstract description 54
- 239000002253 acid Substances 0.000 claims abstract description 14
- 239000007788 liquid Substances 0.000 claims abstract description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 238000005245 sintering Methods 0.000 claims abstract description 4
- 239000000243 solution Substances 0.000 claims description 23
- 238000000137 annealing Methods 0.000 claims description 16
- 239000003513 alkali Substances 0.000 claims description 15
- 235000008216 herbs Nutrition 0.000 claims description 12
- 210000002268 wool Anatomy 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- 230000003667 anti-reflective effect Effects 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- -1 phosphonium ion Chemical class 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 8
- 239000011574 phosphorus Substances 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 7
- 238000005468 ion implantation Methods 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000009792 diffusion process Methods 0.000 description 13
- 150000002500 ions Chemical class 0.000 description 13
- 230000000694 effects Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a preparation method of a P-type single crystal solar cell. According to the method, the open circuit voltage and short circuit current of the cell are remarkably improved through re-cleaning of a textured silicon wafer and a phosphorus ion implantation technology, and the conversion efficiency of the cell is improved. The preparation method of the P-type single crystal solar cell comprises the steps that S1, the silicon wafer is textured; S2, lye and acid liquid rinsing is carried out on the textured silicon wafer, and then the textured silicon wafer is blown by an air knife; S3, phosphorus ion implantation is carried out on the front of the silicon wafer; S4, the silicon wafer is annealed; S5, a reverse reflection silicon nitride film is made on the front of the silicon wafer; and S6, gate electrodes are printed on the front and back of the silicon wafer, and sintering is carried out.
Description
Technical field
The invention belongs to area of solar cell, particularly to a kind of preparation method of p-type monocrystalline solar cell.
Background technology
Photovoltaic, as one kind of clear energy sources, is one of candidate of future source of energy solution.Particularly pass through
Development in recent years, its application is day by day extensive, and technique reaches its maturity.Photovoltaic technology cleans, and convenient feature is also rooted in the hearts of the people.But
It is that conversion efficiency is not high to lead to its cost of electricity-generating to remain high, and limits popularizing more on a large scale of photovoltaic generation.Photovoltaic city at present
The major product of field is crystal silicon battery, including monocrystal silicon and polycrystal silicon cell.
P type single crystal silicon battery is the main flow in current monocrystalline market, and processing technology is simple, and cost is lower than N-type monocrystalline.Have very
The strong market competitiveness.P type single crystal silicon battery has following two preparation methoies：
Diffusion：The diffusion of conventional P-type battery makes PN junction, and knot process processed is generation conduction type on p-type matrix material
Different diffusion layers.Diffusion is a kind of phenomenon of material molecule or atomic motion.The method of thermal diffusion P-N junction is by high temperature
V race impurity is made to penetrate into P-type silicon.The most frequently used V race impurity is phosphorus.Requirement to diffusion is to obtain to be suitable for solaode P-N
Junction depth and diffusion layer square resistance that knot needs.Shallow junction dead layer is little, and battery shortwave effect is good, and shallow junction causes series resistance to increase
Plus, only it is improved the density of thin gate electrode, just can effectively improve the fill factor, curve factor of battery, which adds technology difficulty；Knot
Deep too deep, dead layer is obvious.If diffusion concentration is too big, cause heavy doping effect, make open-circuit voltage and the short circuit of battery
Electric current declines.It is considered to many factors in actual battery makes, the junction depth general control of solaode 0.1～
1um, square resistance average out to 55～120 Ω.At present, the thermal diffusion method used by p-type crystal silicon solar batteries is mainly liquid
Phosphorus source spreads, and this technique is that the method being carried by gas brings impurity phosphorus source in diffusion furnace realization.
Ion implanting system is tied：Ion implanting system knot is different from diffusion principle, and it utilizes electromagnetic field to the object ion with point
Carry out accelerating sorting.Object ion high-speed impact enters inside silicon chip, is entered by adjusting the energy hole ion of accelerating field
The depth of silicon chip.Concentration by the Relative motion control doping of line and target silicon chip（Dosage）.Ion implantation technique prominent
Go out the PN junction depth that feature is making and doping content can accurately be adjusted, large area PN junction uniformity.Because ion rests on
The position of silicon chip is restricted by prevention mechanism, the most probable certain position being distributed in away from surface certain depth of dopant ion, ion
The surface dopant concentration ratio of injection silicon chip is relatively low, so just significantly avoids the appearance of dead layer, can be obviously improved electricity
The short wave response of pond piece.By annealing process afterwards, while can electrically activating, form one layer of silicon oxide on the surface of silicon chip
Thin film, this thermally grown oxide layer is one of very excellent surface passivation material.
Traditional liquid phosphorus diffusion is so that p type single crystal silicon battery front surface doping content is higher, as relatively good
Complex centre exist, limit the lifting further of battery efficiency.Ion implantation technique replaces liquid phosphorus diffusion, can be notable
Reduce the surface dopant concentration of battery, it is to avoid dead layer appearance, by thermal anneal process, cell piece surface formed have good
The silicon oxide of passivation effect.But thermal oxide requires higher to the surface cleanliness of cell piece.
With regard to monocrystalline making herbs into wool, mostly adopt in the industry the solution of slot type, similar, the final baking of process detail at present
Dry essential.During drying, temperature was often as high as 70 ~ 100 DEG C, for up to 7 ~ 10 minutes.In this damp and hot environment, dry
Dry gas stream cleanliness factor is not also very good, may eventually form a kind of poor primary silicon oxide layer（<2nm）.Electricity after making herbs into wool
When drying, surface forms a kind of poor silicon oxide to pond piece and surface is stained, and this cell piece is used for ion implanting, heat
The quality of the silicon oxide that oxidizing annealing is formed cannot reach preferable effect, and the front surface of battery is combined and fails to be reduced to ideal
Level, seriously limit the advantage of ion implantation technology.
Content of the invention
Present invention aim to address above-mentioned the deficiencies in the prior art and problem it is proposed that a kind of p-type monocrystalline too
The preparation method in positive electricity pond, the method the cleaning again with reference to phosphonium ion injection technique of silicon chip after making herbs into wool, significantly improve battery
Open-circuit voltage and short circuit current, thus lifting the transformation efficiency of battery.
The technical solution used in the present invention is as follows：
A kind of preparation method of p-type monocrystalline solar cell, includes successively：
S1, making herbs into wool is carried out to silicon chip；
S2, the silicon chip after making herbs into wool is carried out with the rinsing of alkali liquor and acid solution, then pass through air knife drying；
S3, phosphonium ion injection is carried out to front side of silicon wafer；
S4, silicon chip is annealed；
S5, front side of silicon wafer make antireflective silicon nitride film；
S6, print gate line electrode in the front and back of silicon chip, and sinter.
Preferably, in step S2, silicon chip is carried out successively with alkali liquor rinsing, deionized water rinsing, acid solution rinsing, deionized water
Rinsing.
It is highly preferred that
In step S2, alkali liquor is 3 ~ 10% KOH solution for mass concentration,
And/or,
In step S2, acid solution for mass concentration be 5 ~ 15% HF solution or NH4F solution.
Preferably, in step S2, described alkali liquor and acid solution are carried out to silicon chip by the way of running roller carries liquid, and pass through
Adjust the rotating speed of running roller and medicinal liquid circular flow adjusts cleaning speed.
Preferably, in step S1, silicon chip is carried out with alkali making herbs into wool to form pyramid suede structure in silicon chip surface.
Preferably, in step S3, in step S3, implantation dosage is 1 ~ 8e15cm-2, accelerating field energy is 5-15KeV, note
Entering junction depth is 0.3-0.8um.
Preferably, in step S4, annealing temperature is 750 ~ 950 DEG C, and annealing time is 5 ~ 25min.
Preferably, in step S4, in annealing, it is passed through nitrogen and oxygen in the annealing boiler tube of closing, after annealing just
Surface launching pole sheet resistance is between 65 ~ 90 Ω.
Preferably, in step S5, antireflective silicon nitride film, described antireflective nitridation are made in front side of silicon wafer by PECVD
The thickness of silicon fiml is 75 ~ 90nm, and refractive index is 2.02 ~ 2.10.
Preferably, printing and the sintering of silicon chip positive back silver gate line electrode and back aluminium back surface field in step S6, are carried out.
The present invention adopts above scheme, has the advantage that compared to existing technology：
The preparation method of the p-type monocrystalline solar cell of the present invention passes through alkali, acid rinse it is ensured that silicon chip surface ten during ion implanting
Divide preferable cleannes, coupled ion injection technique is so that p-type cell piece surface dopant concentration ratio is relatively low, almost without dead layer
Feature, is obviously improved the efficiency of cell piece.The method is reproducible, stable performance, suitable industrialization large-scale application.
Brief description
Accompanying drawing 1 is a kind of schematic flow sheet of the preparation method of p-type monocrystalline solar cell of the present invention.
Specific embodiment
Below in conjunction with the accompanying drawings presently preferred embodiments of the present invention is described in detail, so that advantages and features of the invention energy
It is easier to be understood by the person skilled in the art.
Referring to the drawings shown in 1, a kind of preparation method of p-type monocrystalline solar cell of the present invention, in turn include the following steps：
S1, alkali making herbs into wool is carried out to p type single crystal silicon piece, form the pyramid suede structure with light trapping effect in silicon chip surface.This
The surface reflectivity planting the structure of matte only has 9 ~ 10%, can play preferable light trapping effect, improve the suction to light for the cell piece
Receive.
S2, the subsequent rinsing that silicon chip after making herbs into wool is carried out with alkali liquor and acid solution, alkali liquor and acid solution are using the side with liquid for the running roller
Method is carried out to silicon chip, can be adjusted cleaning speed and be reached the effect of optimum by regulating roller wheel speed and medicinal liquid circular flow
Really.The KOH weak solution rinsing that specific technique is 3 ~ 10% for mass concentration, deionized water rinses, and mass concentration is 5 ~ 15%
HF rinses, and deionized water rinses, last air knife rapid purging.Sour cleaning solution is not limited to HF solution, can also be equally have weak
Acid NH4The solution such as F.Purpose is the poor Surface Oxygen SiClx in order to remove the formation of making herbs into wool baking stage.
S3, the subsequent phosphonium ion injection that silicon chip is carried out with front, implantation dosage is 1 ~ 8e15cm-2, accelerating field energy is 5
~ 15KeV, injection junction depth is 0.3 ~ 0.8um.
S4, silicon chip is annealed, complete the electrical activation of phosphorus.Annealing temperature be 750 ~ 950 DEG C, annealing time be 5 ~
25min.Meanwhile, in pyroprocess, it is passed through appropriate oxygen in the annealing boiler tube of closing, silicon chip surface can form cause
Close silicon oxide layer, thus reaching more satisfactory passivation effect, can be obviously improved open-circuit voltage and the short circuit current of battery.
Front side emitter pole sheet resistance after annealing is between 65 Ω -90 Ω.
S5, front side of silicon wafer use PECVD make antireflective silicon nitride（SiNx）Film, is formed very together with pyramid matte
Good light trapping structure is it is often more important that silicon nitride can further function as the effect of surface passivation.The thickness of silicon nitride film be 75 ~
90nm, refractive index is 2.02 ~ 2.10.
S6, the printing carrying out positive back silver gate line electrode and back aluminium back surface field and sintering.
The present invention uses simple alkali, acid rinse technique it is ensured that silicon chip surface very good cleaning during ion implanting
Degree.Coupled ion injection technique p-type cell piece surface dopant concentration ratio is relatively low, almost without the feature of dead layer, significantly improves battery
Open-circuit voltage and short circuit current, thus lifting the transformation efficiency of battery.The program is reproducible, stable performance, is suitable for industry
Change large-scale application.
Above-described embodiment only technology design to illustrate the invention and feature, is a kind of preferred embodiment, its purpose exists
Will appreciate that present disclosure in person skilled in the art and implement according to this, the protection of the present invention can not be limited with this
Scope.Equivalent transformation or modification that all spirit according to the present invention are made, all should cover protection scope of the present invention it
Interior.
Claims (10)
1. a kind of preparation method of p-type monocrystalline solar cell is it is characterised in that include successively：
S1, making herbs into wool is carried out to silicon chip；
S2, the silicon chip after making herbs into wool is carried out with the rinsing of alkali liquor and acid solution, then pass through air knife drying；
S3, phosphonium ion injection is carried out to front side of silicon wafer；
S4, silicon chip is annealed；
S5, front side of silicon wafer make antireflective silicon nitride film；
S6, print gate line electrode in the front and back of silicon chip, and sinter.
2. the preparation method of p-type monocrystalline solar cell according to claim 1 is it is characterised in that in step S2, to silicon chip
Carry out alkali liquor rinsing, deionized water rinsing, acid solution rinsing, deionized water rinsing successively.
3. p-type monocrystalline solar cell according to claim 1 and 2 preparation method it is characterised in that
In step S2, alkali liquor is 3 ~ 10% KOH solution for mass concentration,
And/or,
In step S2, acid solution for mass concentration be 5 ~ 15% HF solution or NH4F solution.
4. the preparation method of p-type monocrystalline solar cell according to claim 1 and 2 is it is characterised in that in step S2, institute
State alkali liquor and acid solution by the way of running roller carries liquid, silicon chip to be carried out, and by adjusting rotating speed and the medicinal liquid recycle stream of running roller
Amount adjusts cleaning speed.
5. the preparation method of p-type monocrystalline solar cell according to claim 1 is it is characterised in that in step S1, to silicon chip
Carry out alkali making herbs into wool to form pyramid suede structure in silicon chip surface.
6. the preparation method of p-type monocrystalline solar cell according to claim 1 is it is characterised in that in step S3, step S3
In, implantation dosage is 1 ~ 8e15cm-2, accelerating field energy is 5-15KeV, and injection junction depth is 0.3-0.8um.
7. the preparation method of p-type monocrystalline solar cell according to claim 1 is it is characterised in that in step S4, annealing is warm
Spend for 750 ~ 950 DEG C, annealing time is 5 ~ 25min.
8. the preparation method of the p-type monocrystalline solar cell according to claim 1 or 7 is it is characterised in that in step S4,
During annealing, it is passed through nitrogen and oxygen in the annealing boiler tube of closing, the front side emitter pole sheet resistance after annealing is between 65 ~ 90 Ω.
9. the preparation method of p-type monocrystalline solar cell according to claim 1 is it is characterised in that in step S5, pass through
PECVD makes antireflective silicon nitride film in front side of silicon wafer, and the thickness of described antireflective silicon nitride film is 75 ~ 90nm, and refractive index is
2.02~2.10.
10. the preparation method of p-type monocrystalline solar cell according to claim 1 is it is characterised in that in step S6, carry out
The printing of silicon chip positive back silver gate line electrode and back aluminium back surface field and sintering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201611036687.XA CN106409978A (en) | 2016-11-23 | 2016-11-23 | Preparation method of P-type single crystal solar cell |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611036687.XA CN106409978A (en) | 2016-11-23 | 2016-11-23 | Preparation method of P-type single crystal solar cell |
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| CN201611036687.XA Pending CN106409978A (en) | 2016-11-23 | 2016-11-23 | Preparation method of P-type single crystal solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107993940A (en) * | 2017-10-31 | 2018-05-04 | 泰州隆基乐叶光伏科技有限公司 | The preparation method of p-type solar cell |
| CN111430478A (en) * | 2020-05-14 | 2020-07-17 | 中威新能源(成都)有限公司 | Method for texturing treatment in heterojunction battery production |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976695A (en) * | 2010-09-28 | 2011-02-16 | 中国科学院微电子研究所 | Shallow junction solar battery and preparation method thereof |
| CN102226983A (en) * | 2011-05-11 | 2011-10-26 | 常州天合光能有限公司 | Etching cleaning equipment and etching cleaning technology |
| CN103208564A (en) * | 2013-04-11 | 2013-07-17 | 浙江正泰太阳能科技有限公司 | Method for preparing crystalline silicon solar cell |
| CN103811582A (en) * | 2012-11-08 | 2014-05-21 | 上海神舟新能源发展有限公司 | Method of employing ion implantation to prepare ultra low surface doping concentration low sheet resistance silicon solar cell |
| CN103996745A (en) * | 2014-05-23 | 2014-08-20 | 奥特斯维能源（太仓）有限公司 | Method for manufacturing boron diffusion and phosphorus ion implantation combination solar cell capable of being produced in large-scale mode |
-
2016
- 2016-11-23 CN CN201611036687.XA patent/CN106409978A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101976695A (en) * | 2010-09-28 | 2011-02-16 | 中国科学院微电子研究所 | Shallow junction solar battery and preparation method thereof |
| CN102226983A (en) * | 2011-05-11 | 2011-10-26 | 常州天合光能有限公司 | Etching cleaning equipment and etching cleaning technology |
| CN103811582A (en) * | 2012-11-08 | 2014-05-21 | 上海神舟新能源发展有限公司 | Method of employing ion implantation to prepare ultra low surface doping concentration low sheet resistance silicon solar cell |
| CN103208564A (en) * | 2013-04-11 | 2013-07-17 | 浙江正泰太阳能科技有限公司 | Method for preparing crystalline silicon solar cell |
| CN103996745A (en) * | 2014-05-23 | 2014-08-20 | 奥特斯维能源（太仓）有限公司 | Method for manufacturing boron diffusion and phosphorus ion implantation combination solar cell capable of being produced in large-scale mode |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107993940A (en) * | 2017-10-31 | 2018-05-04 | 泰州隆基乐叶光伏科技有限公司 | The preparation method of p-type solar cell |
| CN111430478A (en) * | 2020-05-14 | 2020-07-17 | 中威新能源(成都)有限公司 | Method for texturing treatment in heterojunction battery production |
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