CN107093599A - 多芯片的封装结构 - Google Patents

多芯片的封装结构 Download PDF

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CN107093599A
CN107093599A CN201710398633.6A CN201710398633A CN107093599A CN 107093599 A CN107093599 A CN 107093599A CN 201710398633 A CN201710398633 A CN 201710398633A CN 107093599 A CN107093599 A CN 107093599A
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chip
substrate
window
encapsulating structure
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金国庆
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National Center for Advanced Packaging Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0652Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4824Connecting between the body and an opposite side of the item with respect to the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73215Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Computer Hardware Design (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

本发明公开了一种多芯片的封装结构,包括:多个芯片;基板,用于为多个芯片提供放置位,基板上刻穿有窗口;多个芯片堆叠于窗口的两侧;各个芯片的焊垫位于窗口的投影范围内。通过本发明,可以对各个芯片进行三维堆叠时增加封装密度,改善芯片堆叠的稳定性能。

Description

多芯片的封装结构
技术领域
本发明涉及半导体领域,具体涉及一种多芯片的封装结构。
背景技术
全球终端电子产品不断朝轻薄短小、多功能、低功耗的发展趋势下,能够整合上述特性的***级封装(System in Package,SiP)技术逐渐受到重视。SiP已经成为重要的先进封装和***集成技术,是电子产品小型化和多功能化的重要技术路线,在微电子和电子制造领域具有广阔的应用市场和发展前景。
传统的芯片三维堆叠大部分为芯片在基板正面做堆叠,完成相应的焊线塑封工艺,芯片的焊垫(焊线焊接点)在单边或者多边,一般而言,在芯片上的焊垫所在区域不做堆叠,以避免堆叠时对焊线造成破坏或者短路。现有技术中,在对芯片堆叠时,为避免焊垫区域被堆叠,通常位于上层的芯片面积小于下层芯片面积,这会导致在多层芯片堆叠时,位于上层的芯片因面积过小而出现IO接口数量不足的情况,并且,由于各层芯片大小不一,使得在堆叠过程中,容易导致各层芯片之间受力不均,造成堆叠的芯片不稳定;现有技术中,为了确保各个芯片的面积,也对各个芯片进行平铺,然而,这增加了基板的平面面积。此外,在对各个芯片进行三维堆叠时也会产生焊线过长、紊乱的问题。
因此,如何增加封装密度,改善芯片堆叠的稳定性能成为了亟待解决的问题。
发明内容
因此,本发明要解决的技术问题在于如何增加封装密度,改善芯片堆叠的稳定性能。
为此,根据第一方面,本发明实施例提供了一种多芯片的封装结构,包括:多个芯片;基板,用于为多个芯片提供放置位,基板上刻穿有窗口;多个芯片堆叠于窗口的两侧;各个芯片的焊垫位于窗口的投影范围内。
可选地,多个芯片位于基板的同一侧。
可选地,多个芯片的数目为偶数个,多个芯片对称分布在窗口的两侧。
可选地,多个芯片的数目为2N+1个,其中,N为正整数,多个芯片中的第1个至2N个芯片对称分布在窗口的两侧并形成小于所述窗口的缝隙;第2N+1个芯片覆盖住缝隙。
可选地,多根焊线,各个焊线从基板贯穿窗口和各同层芯片间隙连接至各个芯片的焊垫,以将各个芯片分别与基板信号连接。
可选地,塑封料,包覆多个芯片和多根焊线。
本发明技术方案,具有如下优点:
本发明提供的多芯片的封装结构,由于基板上刻穿有窗口,各个芯片的焊垫位于窗口的投影范围内,使得各个芯片的焊垫能够通过该窗口与基板进行信号连接;由于多个芯片堆叠于窗口的两侧,相对于现有技术中,单摞堆叠芯片的结构,本发明实施例提供的方案增加了芯片封装密度,并且,由于各芯片堆叠于窗口的两侧,提高了芯片封装时受力均匀性,继而改善芯片堆叠的稳定性能。
作为可选的技术方案,由于将各个芯片分别与基板信号用多根焊线连接时,各个焊线从基板贯穿窗口和各同层芯片间隙连接至各个芯片的焊垫,封装时使用塑封料将多个芯片和多根焊线包覆住,使得在对各个芯片进行三维堆叠时焊线不易被压伤、短路。
附图说明
为了更清楚地说明本发明具体实施方式或现有技术中的技术方案,下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图是本发明的一些实施方式,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明实施例中一种多芯片的封装结构示意图;
图2为本发明实施例中另一种多芯片的封装结构示意图。
具体实施方式
下面将结合附图对本发明的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
在本发明的描述中,需要说明的是,术语“中心”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。此外,术语“第一”、“第二”、“第三”仅用于描述目的,而不能理解为指示或暗示相对重要性。
在本发明的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,还可以是两个元件内部的连通,可以是无线连接,也可以是有线连接。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本发明中的具体含义。
此外,下面所描述的本发明不同实施方式中所涉及的技术特征只要彼此之间未构成冲突就可以相互结合。
为了增加芯片封装密度,改善芯片堆叠的稳定性能,本实施例提供一种多芯片的封装结构,请参考图1和图2,为该多芯片的封装结构示意图,本实施例中,该多芯片的封装结构包括:多个芯片102和基板101,其中:
多个芯片102用于实现各种电学功能,一般而言,各个芯片102上布置有各自的电路结构。
基板101用于为多个芯片102提供放置位,基板101上刻穿有窗口106;多个芯片102堆叠于窗口106的两侧;各个芯片102的焊垫103位于窗口106的投影范围内。在具体实施中,多个芯片102堆叠于基板101的同一侧,具体地,可以对称分布在窗口106的两侧,各个芯片102的焊垫103分别朝向窗口106,并且,各个焊垫103应当避免被其它芯片所遮挡,从而,为从焊垫103向基板101引出焊线提供了通道。请参考图2在一种实施例中,多个芯片102的数目可以为偶数个,该偶数多个芯片102对称分布在窗口的两侧,在堆叠的过程中,可以将位于最上层的一对芯片102侧边贴合,从而,覆盖各层芯片之间形成的缝隙。请参考图2在另一种实施例中,多个芯片102的数目也可以为奇数个,即多个芯片的数目为2N+1个,其中,N为正整数,多个芯片中的第1个至2N个芯片对称分布在窗口的两侧并形成小于窗口的缝隙,第2N+1个芯片覆盖住缝隙。
在具体实施过程中,可以先在基板101的窗口106两侧贴附一层芯片102,而后依次堆叠其它层的芯片102。在具体将芯片102贴附在基板101的过程中,可以对基板101上的芯片放置位采用划胶或者印刷工艺,把胶水划在基板贴片面。本实施例中,芯片放置位上贴附芯片用的胶水可以是例如B stage胶水,在对基板101上的芯片放置位上划胶后,可以经过预固化,使胶水呈半固化状态,而后将芯片贴附在基板101上。在具体堆叠芯片102的过程中,可以对当前层的芯片102上表面进行划胶和预固化的处理,而后将位于当前层芯片的上一层芯片102贴附在当前层的芯片上。在可选的实施例中,也可以通过芯片键合模(Dieattach film,DAF)105来对基板与芯片、不同层的芯片之间进行固定。需要说明的是,当芯片102自带粘贴功能时,譬如芯片102附着有印刷胶水(例如乙阶酚醛树脂),则在对基板与芯片102、不同层的芯片102之间进行固定时,可以无需外置贴附胶水,可以直接使用其自身附着的印刷胶水进行固定堆叠,简化封装工艺。
在可选的实施例中,多个芯片102堆叠的层数至少为两层,位于同层的芯片之间形成同层芯片间隙;靠近基板101的芯片层的同层芯片间隙大于远离基板101的芯片层的同层芯片间隙,以使远离基板101的芯片层的芯片焊垫位于靠近基板101的芯片层的同层芯片间隙的投影范围内。从而,能够避免位于靠近基板101的芯片层遮挡住位于远离基板101的芯片层的芯片焊垫103,使得从焊垫103向基板101引出焊线的通道更为顺畅。
在可选的实施例中,该多芯片的封装结构还包括:多根焊线104,各个焊线104从基板101贯穿窗口和各同层芯片间隙连接至各个芯片的焊垫,以将各个芯片分别与基板101信号连接。本实施例中,焊线104可采用金线、铜线或者金银合金线等工艺。
在可选的实施例中,该多芯片的封装结构还包括:塑封料107,塑封料107包覆多个芯片和多根焊线。需要说明的是,在具体实施例中,在各个芯片堆叠、焊线连接完成后,通过塑封料封装住这些元器件,塑封过程中需注意焊线的压伤,短路等不良。
本实施例提供的多芯片的封装结构,由于基板上刻穿有窗口,各个芯片的焊垫位于窗口的投影范围内,使得各个芯片的焊垫能够通过该窗口与基板进行信号连接;由于多个芯片堆叠于窗口的两侧,相对于现有技术中,单摞堆叠芯片的结构,本发明实施例提供的方案增加了芯片封装密度,并且,由于各芯片堆叠于窗口的两侧,提高了芯片封装时受力均匀性,继而改善芯片堆叠的稳定性能。
在可选的实施例中,由于将各个芯片分别与基板信号用多根焊线连接时,各个焊线从基板贯穿窗口和各同层芯片间隙连接至各个芯片的焊垫,封装时使用塑封料将多个芯片和多根焊线包覆住,使得在对各个芯片进行三维堆叠时焊线不易被压伤、短路。
显然,上述实施例仅仅是为清楚地说明所作的举例,而并非对实施方式的限定。对于所属领域的普通技术人员来说,在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本发明创造的保护范围之中。

Claims (7)

1.一种多芯片的封装结构,其特征在于,包括:
多个芯片;
基板,用于为所述多个芯片提供放置位,所述基板上刻穿有窗口;
所述多个芯片堆叠于所述窗口的两侧;各个芯片的焊垫位于所述窗口的投影范围内。
2.如权利要求1所述多芯片的封装结构,其特征在于,所述多个芯片位于所述基板的同一侧。
3.如权利要求1所述多芯片的封装结构,其特征在于,所述多个芯片的数目为偶数个,所述多个芯片对称分布在所述窗口的两侧。
4.如权利要求1所述的多芯片的封装结构,其特征在于,所述多个芯片的数目为2N+1个,其中,N为正整数,所述多个芯片中的第1个至2N个芯片对称分布在所述窗口的两侧并形成小于所述窗口的缝隙;第2N+1个芯片覆盖住所述缝隙。
5.如权利要求1-4任意一项所述的多芯片的封装结构,其特征在于,所述多个芯片堆叠的层数至少为两层,位于同层的芯片之间形成同层芯片间隙;靠近所述基板的芯片层的同层芯片间隙大于远离所述基板的芯片层的同层芯片间隙,以使远离所述基板的芯片层的芯片焊垫位于靠近所述基板的芯片层的同层芯片间隙的投影范围内。
6.如权利要求5所述的多芯片的封装结构,其特征在于,还包括:
多根焊线,各个焊线从所述基板贯穿所述窗口和各同层芯片间隙连接至各个芯片的焊垫,以将各个芯片分别与所述基板信号连接。
7.如权利要求6所述多芯片的封装结构,其特征在于,还包括:
塑封料,包覆所述多个芯片和所述多根焊线。
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US20090134504A1 (en) * 2007-11-28 2009-05-28 Walton Advanced Engineering, Inc. Semiconductor package and packaging method for balancing top and bottom mold flows from window
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KR20070088177A (ko) * 2006-02-24 2007-08-29 삼성테크윈 주식회사 반도체 패키지 및 그 제조 방법
US20090134504A1 (en) * 2007-11-28 2009-05-28 Walton Advanced Engineering, Inc. Semiconductor package and packaging method for balancing top and bottom mold flows from window
US20100295166A1 (en) * 2009-05-21 2010-11-25 Samsung Electronics Co., Ltd. Semiconductor package
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