CN106847891B - A kind of RC-IGBT device controlling knot terminal integral body diode by MOSFET - Google Patents
A kind of RC-IGBT device controlling knot terminal integral body diode by MOSFET Download PDFInfo
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Abstract
The present invention relates to RC-IGBT, belong to field of semiconductor, including cathode layer, the drift region N-, N buffer layer and the collecting zone being arranged from top to bottom, collecting zone includes the N collector region and P collector region of same layer setting, several polygate electrodes are arranged at intervals in cathode layer, each gate electrode is by SiO2Gate oxide surrounds；RC-IGBT device is from left to right active area, transition region and knot termination environment, and knot termination environment bottom is made of N collector region completely.The present invention is integrated with body diode, anode of the field limiting ring P-ring of knot terminal as diode, cathode of the N collector region of knot termination environment bottom as diode, control of the on state by the MOSFET for being integrated in transition region using knot termination environment.RC-IGBT device proposed by the invention can thoroughly eliminate snapback phenomenon under forward conduction IGBT mode, and forward conduction voltage drop reduces 19.4%, and this structure substantially increases the performance of RC-IGBT.
Description
Technical field
The present invention relates to field of semiconductor, and in particular to a kind of to control knot terminal conglomerate two by MOSFET
The RC-IGBT device of pole pipe.
Background technique
IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) is because of its pressure resistance etc.
Grade can be widely used in the fields such as high-speed rail, new energy development, household electrical appliance, smart grid from 600V span to 6500V.
But IGBT is an one way conducting device, and when reverse-conducting is equivalent to two back-to-back diodes to be connected.?
Just need one freewheeling diode FWD of inverse parallel (Free Wheeling Diode) to make in the application of IGBT typical case's inverter circuit
Protective effect.RC-IGBT (Reverse-Conducting Insulated Gate Bipolar Transistor, inverse conductivity type
Insulated gate bipolar transistor) the part collector P-Collector N-Collector of IGBT is replaced, collector P-
It is as shown in Figure 1 that Collector and N-Collector is alternatively arranged its structure.So that two back-to-back diodes in original IGBT
P-body/N-drift, N-buffer/P-Collector become P-body/N-drift, N-buffer/N-Collector
One diode structure realizes the integrated of IGBT internal diode.The integrated level for not only increasing chip can also be saved into
This, eliminates existing temperature difference between igbt chip and diode chip for backlight unit, improves reliability.
But tradition RC-IGBT has some disadvantages there are itself: on the one hand due to the introducing of N-Collector, from MOS
The electronics of outflow flows first to the N-Collector of low potential barrier, and the PN junction (P- in bottom when flowing to collector
Collector/N-buffer it is as shown in Figure 2 that a potential difference VPN is generated on).Only have electronics to participate in as VPN < 0.7V conductive,
RC-IGBT works under unipolarity conduction mode.As VPN >=0.7V, P-Collector injects hole, RC- to drift region
IGBT works under bipolarity conduction mode.Since the conversion of two kinds of conduction modes results in the prominent of Current Voltage on curve of output
Become, that is, negative resistance Snapback phenomenon occurs.This phenomenon makes RC-IGBT, and some devices completely cannot be into when used in parallel
Enter the operating mode of IGBT, some devices then because caused by the excessive temperature of electric current is excessively high device burn, eventually lead to entire circuit system
System collapse.
On the other hand, traditional RC-IGBT element layout is as shown in figure 3, cathode due to N-Collector as FWD,
Upper area is the area FWD, and anode of the P-Collector as IGBT, upper area is the area IGBT, traditional RC-IGBT's
IGBT and FWD are blended in the same active area (Active region).Though tradition RC-IGBT in this way work IGBT just
To conduction mode or FWD reverse conduction mode, all only active area conducting electric currents, and knot termination environment (Edge
Termination) area is very as large as the effect for shown in Fig. 1 Fig. 3, but only serving a receiving breakdown reverse voltage, no electric conduction
Stream flows through, and causes current distribution is uneven even and chip utilization rate is low.
Summary of the invention
In view of this, controlling knot terminal integral body diode by MOSFET the purpose of the present invention is to provide a kind of
RC-IGBT device.
The purpose of the present invention is achieved through the following technical solutions, a kind of to control knot terminal conglomerate by MOSFET
The RC-IGBT device of diode, it is described including cathode layer, the drift region N- 6, N buffer layer 7 and the collecting zone being arranged from top to bottom
Collecting zone includes the N collector region 8 and P collector region 9 of same layer setting, is arranged at intervals with several polygate electrodes in the cathode layer
2, active emitter 4 is formed between two neighboring polygate electrodes, each polygate electrodes are by SiO2Gate oxide 3 surrounds；
The area P-body 5 is provided with below each active emitter, the area P-body 5 is located at the top of the drift region N- 6, the area P-body
The N+ active area 1 connecting with active emitter is provided in 5；Insulated gate bipolar transistor is from left to right divided into active
Area, transition region and knot termination environment, the bottom of the knot termination environment are made of N collector region 8 completely.
Further, several SiO are arranged at intervals in the cathode layer in the knot termination environment2Field oxide 15, it is two neighboring
SiO2Field oxide connects a field stop collar P-ring14, and field stop collar P-ring is located in the drift region N-, field stop collar P-
Ring is connect with the anode of the RC-IGBT body diode being internally integrated, the body diode that N collector region is internally integrated with RC-IGBT
Cathode connection.
Further, MOSFET is provided in the equal potential belt 10 of the transition region, the source electrode 11 of MOSFET and drain electrode 12 are located at
In the equal potential belt 10 of transition region, the grid 13 of MOSFET is located at SiO2In gate oxide 3；The source electrode 11 and knot termination environment of MOSFET
Metal be connected, drain electrode 12 is connected with the cathodic metal of active area, the cathodic metal phase of grid 13 and drain 12 and active area
Even, the channel between source electrode and drain electrode, which is opened, is controlled with off state by MOSFET grid 13.
Due to using the technology described above, the invention has the following advantages that
A kind of RC-IGBT device controlling knot terminal integral body diode by MOSFET proposed by the invention, just
Snapback phenomenon is completely eliminated under to conducting IGBT mode, and forward conduction voltage drop reduces 19.4%.In reverse-conducting
Under FWD mode, body diode is integrated with by knot terminal, which has soft anti-recovery characteristics, and entire Reverse recovery
The fluctuation of no current and voltage in the process.In conclusion this new construction RC-IGBT substantially increases the comprehensive of traditional RC-IGBT
Close performance.
Detailed description of the invention
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing to the present invention make into
The detailed description of one step, in which:
Fig. 1 is traditional RC-IGBT structural schematic diagram；
Fig. 2 is existing two kinds of conduction modes during traditional RC-IGBT forward conduction；Wherein collector P-
Voltage difference V between Collector and buffer layer n-bufferPNWhen < 0.7V, traditional RC-IGBT work is in unipolarity conduction mould
Formula works as VPNWhen > 0.7V, traditional RC-IGBT work is in bipolarity conduction mode；
Fig. 3 is the domain structure of traditional RC-IGBT；Wherein the part collector P-Collector of tradition RC-IGBT is by N-
Replaced Collector, P-Collector and N-Collector are arranged on collector, area above P-Collector
Domain is the area IGBT, and N-Collector upper area is the area FWD, therefore IGBT is mixed with FWD, i.e., diode has been integrated in
Source region；
Fig. 4 is a kind of RC-IGBT device that knot terminal integral body diode is controlled by MOSFET proposed by the present invention；
Fig. 5 is the domain structure of new construction RC-IGBT；New construction RC-IGBT is by the P-Collector of traditional RC-IGBT
With after N-Collector integration and separate, N-Collector is distributed in knot terminal region at this time, as the cathode of FWD,
Its upper area is the area FWD, and P-Collector is distributed in active area, and as the anode of IGBT, upper area is the area IGBT,
The separation of FWD Yu IGBT active area are realized, i.e. diode is integrated in knot termination environment；
Fig. 6 is a kind of topological structure of RC-IGBT device that knot terminal integral body diode is controlled by MOSFET, that is, is answered
For slot grid trench structure RC-IGBT；
Fig. 7 is a kind of topological structure of RC-IGBT device that knot terminal integral body diode is controlled by MOSFET, that is, is answered
For Super-junction structure RC-IGBT；
Fig. 8 be at room temperature T=300K when, length is the new construction RC-IGBT and tradition RC-IGBT of 450um in forward direction
IGBT mode figure compared with the Current Voltage emulation under reverse-conducting FWD mode is connected；Wherein IGBT mode is forward conduction
IGBT mode, DIODE mode are reverse-conducting FWD mode；
Fig. 9 is that new construction RC-IGBT, traditional RC-IGBT under forward conduction and reverse-conducting state, work as electric current respectively
Density reaches 150A/cm2When current distributing figure；Wherein A point represents current distribution of the tradition RC-IGBT in forward conduction, B
Point represents current distribution of the new construction RC-IGBT in forward conduction, and C point represents electricity of the tradition RC-IGBT in reverse-conducting
Flow distribution, D point represent current distribution of the new construction RC-IGBT in reverse-conducting；
Figure 10 is the reverse recovery current voltage wave of new construction RC-IGBT, traditional RC-IGBT and traditional PIN diode
Shape compares figure；Wherein vignette is the calculation method of the softness factor, and Snap-off is the unexpected termination of electric current；
Figure 11 is device in the reversely restoring process of new construction RC-IGBT, traditional RC-IGBT and traditional PIN diode
Internal current profiles versus figure；Wherein Hole Injection represents new construction RC-IGBT and traditional RC-IGBT and is reversely taking out
When obtaining current, P-Collector constantly injects hole into drift region, and Without Hole Injection represents traditional PI N
Diode is since there is no P-Collector, in reversely restoring process, no hole injection；
Wherein, 1 is N+ active area, and 2 be slot gate polysilicon electrode, and 3 be slot grid silicon dioxide layer, and 4 be active emitter, 5
It is the area P-body, 6 be the drift region N-, and 7 be N buffer layer, and 8 be N collector region, and 9 be P collector region, and 10 be transition region equal potential belt, and 11 are
MOS controls the source electrode (being connected with knot terminal metal) of pipe, and 12 be the drain electrode (being connected with the cathodic metal of IGBT) of MOS control pipe,
13 be the grid (being connected with the cathodic metal of IGBT) of MOS control pipe, and 14 be knot terminal field limiting ring P-ring, and 15 be field oxidation
Layer, 16 be superjunction P column.
Specific embodiment
Below in conjunction with attached drawing, a preferred embodiment of the present invention will be described in detail.
A kind of RC-IGBT device controlling knot terminal integral body diode by MOSFET proposed by the present invention, structure
As shown in figure 4, laying out pattern is as shown in Figure 5.
RC-IGBT device, it is described including cathode layer, the drift region N- 6, N buffer layer 7 and the collecting zone being arranged from top to bottom
Collecting zone includes the N collector region 8 and P collector region 9 of same layer setting, is arranged at intervals with several polygate electrodes in the cathode layer
2, active emitter 4 is formed between two neighboring polygate electrodes, each polygate electrodes are by SiO2Gate oxide 3 surrounds；
The area P-body 5 is provided with below each active emitter, the area P-body 5 is located at the top of the drift region N- 6, the area P-body
The N+ active area 1 connecting with active emitter is provided in 5；RC-IGBT device is from left to right divided into active area, transition region
And knot termination environment, the bottom of the knot termination environment are made of N collector region 8 completely.
Several SiO are arranged at intervals in cathode layer in the knot termination environment2Field oxide 15, two neighboring SiO2Field oxygen
Change layer and connect a field stop collar 14, field stop collar is located in the drift region N-, the body two that field stop collar and RC-IGBT are internally integrated
The anode of pole pipe connects, and N collector region is connect with the cathode of the RC-IGBT body diode being internally integrated.
MOSFET is provided in the equal potential belt 10 of the transition region, the source electrode 11 of MOSFET and drain electrode 12 are located at transition region
In equal potential belt 10, the grid 13 of MOSFET is located at SiO2In gate oxide 3；The source electrode 11 of MOSFET and the metal phase of knot termination environment
Even, drain electrode 12 is connected with the cathodic metal of active area, and grid 13 is connected with the cathodic metal of drain 12 and active area, source electrode and
Channel between drain electrode, which is opened, to be controlled with off state by MOSFET grid 13.
The present invention is on the basis of traditional RC-IGBT, first by the collector area the P (P- of original separation arrangement
Collector it) 9 combines and is integrated in active area, form the area IGBT；By the collector area the N (N- of original separation arrangement
Collector it) 8 combines and is integrated in knot terminal region, form the area diode FWD.Its effect has three: the first, positive guide
In logical mechanism, resistance per square on the collector area P (P-Collector) is integrated into a very big resistance by new construction RC-IGBT
Ranode, so that the resistance of its PNP (P-body/n-drift, n-buffer/P-Collector) transistor base emitter
RanodeIt is very big, emitter to base voltage VPNEasily reaching 0.7V makes transistor enter bipolarity conduction mode.Due to only existing
A kind of conductive mechanism, there is no traditional RC-IGBT from unipolarity to bipolarity conduction mode transition process, therefore can effectively disappear
Except Snapback phenomenon.The second, on laying out pattern, new construction RC-IGBT is by the P-Collector and N- of traditional RC-IGBT
After Collector integration and separate.Cathode of the N-Collector as FWD at this time, upper area are the area FWD, P-
Anode of the Collector as IGBT, upper area are the area IGBT, realize the separation of FWD Yu IGBT active area, mention significantly
The high utilization rate of chip.In third structure, the anode for the body diode FWD that traditional RC-IGBT is internally integrated is using P-
The area body, cathode is using N-Collector, and the anode for the body diode FWD that new construction RC-IGBT is internally integrated is to adopt
With field limiting ring P-ring, cathode is still using N-Collector, therefore the diode structure integrated is different, due to field
Limit ring P-ring is the structure of knot termination environment (Edge termination), therefore new construction RC-IGBT successfully utilizes knot terminal collection
At body diode；Secondly, in order to not influence the reverse blocking performance of entire device, new construction is in active area (Active
It region) is to introduce a MOSFET structure in transition region between knot termination environment (Edge termination), this
The source electrode 11 of MOSFET is connected with knot terminal metal, and drain electrode 12 is connected with the cathodic metal of IGBT active area, the ditch between source and drain
Road, which is opened, to be controlled with off state by metal-oxide-semiconductor grid 13, the cathode gold of metal-oxide-semiconductor grid 13 and drain electrode 12 and IGBT active area
Symbolic animal of the birth year connects, therefore metal-oxide-semiconductor grid, it is not necessary that extra is added, signal is synchronous with IGBT active area cathode signal.At RC-IGBT
When reverse-conducting, IGBT active area cathode adds positive voltage i.e. MOSFET grid plus positive voltage, and channel is formed, and MOSFET is opened
It opens, source and drain is connected, and the electric current on the cathode of IGBT active area passes through again after flowing through knot terminal metal by MOSFET channel at this time
The anode P-ring of FWD is downwardly towards N-Collector, this process FWD is in the conductive state.It together should IGBT active area yin
Pole tension cancels the grid signal on MOSFET and disappears, and channel is closed source and drain and disconnected, the source electrode of MOSFET and knot terminal metal with
And the anode P-ring of FWD is connected, the anode of FWD, which disconnects, at this time is in blocking state.Therefore by introducing in transition region
MOSFET structure can directly control the working condition for the body diode FWD that knot termination environment integrates, and MOSFET is only equivalent to one
A switch is as shown in Fig. 4 equivalent electrical diagram.To sum up, new construction RC-IGBT device of the invention is by knot terminal conglomerate
Diode FWD, and by the operating mode of MOSFET control FWD, the structure newly introduced is carried out on the basis of traditional RC-IGBT
It improves, but great variety has occurred in working mechanism.It is positive that this novel RC-IGBT not only can thoroughly eliminate traditional RC-IGBT
The existing Snpaback phenomenon of conducting, while making chip area obtain abundant benefit using knot terminal region integral body diode
With, by MOSFET control body diode, FWD is worked normally in forward conduction, does not influence device in reverse blocking
The blocking pressure resistance of part, the comprehensive performance of device greatly improve.
It further illustrates, new construction of the invention can be in addition to can be used in planar gate RC-IGBT (such as Fig. 4)
Among the RC-IGBT (such as Fig. 6) and superjunction super junction RC-IGBT (such as Fig. 7) of slot grid trench structure.
It can be obtained by MEDICI simulation software, to provided traditional RC-IGBT as shown in Figure 1, as shown in Figure 4 is new
Structure RC-IGBT has carried out emulation and has compared, the 600V resistance to RC-IGBT that arbitrarily downgrades, traditional RC-IGBT of the manufacture of analogue simulation thin slice technique
Consistent with the simulation parameter of new construction RC-IGBT, wherein N- drift region thickness is 60um, and doping concentration is 7 × 1013cm-3, carry
Flowing the sub- service life is 10us, environment temperature 300K, length 450um.
Fig. 8 be at room temperature T=300K when, length is the new construction RC-IGBT and tradition RC-IGBT of 450um in forward direction
The Current Voltage analogous diagram under IGBT mode and reverse-conducting FWD mode is connected.By Fig. 8 simulation result it is found that in forward conduction
State, that is, Vg=15V, Vcathode=0V, VanodeWhen=(+V), when electric current is 5A or so snapback occurs for traditional RC-IGBT
The degree Δ V of snapback phenomenon occurs for phenomenonSB=1.8V.For new construction RC-IGBT, entire forward conduction process without
Snapback phenomenon occurs, and principle analysis is as above therefore the length by integrating P-Collector can be eliminated well
Snapback phenomenon；In addition when forward conduction electric current reaches 150A/cm2, the forward conduction voltage drop of traditional RC-IGBT is 2.06V
As shown in A point in Fig. 8, the forward conduction voltage drop of corresponding new construction RC-IGBT is 1.66V as shown in B point in Fig. 8, opposite to pass
Unite RC-IGBT, and new construction RC-IGBT conduction voltage drop reduces 19.4%.To sum up new construction RC-IGBT is not only eliminated
Snapback phenomenon, being also greatly reduced forward conduction voltage drop i.e. reduces forward conduction loss.It equally can by Fig. 8 simulation result
Know, in reverse-conducting state, that is, Vg=0V, Vcathode=(+V), VanodeWhen=0v, traditional RC-IGBT and new construction RC-IGBT
The reverse-conducting curve of diode FWD be consistent substantially, when reverse-conduction current reaches -150A/cm2, two kinds of RC-IGBT
Reverse-conducting pressure drop be respectively at D point and C point, the two in Fig. 8 and there is no essential distinction, i.e., new construction RC-IGBT is to traditional RC-
The reverse-conducting performance of IGBT influences less, to ignore.
Fig. 9 is new construction RC-IGBT, and traditional RC-IGBT under forward conduction and reverse-conducting state, works as electric current respectively
Density reaches 150A/cm2When current distributing figure, A, B, C in figure, D point is corresponding with Fig. 8.From simulation result: positive
When conducting, the part P-Collector of traditional RC-IGBT is replaced N-Collector, therefore left side no current is distributed in figure,
Conducting electric current is mainly distributed on the top i.e. area IGBT of P-Collector.New construction RC-IGBT is whole due to N-Collector
Close knot terminal region, P-Collector is distributed in entire active area, therefore when forward conduction current distribution in the entire area IGBT,
Tradition RC-IGBT, current distribution are more uniform relatively.When reverse-conducting, the cathode of the diode FWD of traditional RC-IGBT is N-
Collector, anode P-body, therefore reverse-conduction current is distributed in above N-Collector and is distributed in active area.New knot
The cathode of the diode FWD of structure RC-IGBT is N-Collector, anode P-ring, since N-Collector is integrated into
Knot terminal region event reverse-conduction current is distributed in knot termination environment.
Figure 10 is new construction RC-IGBT, the reverse recovery current voltage wave of traditional RC-IGBT and traditional PIN diode
Shape compares figure, and You Tuzhong current curve can be seen that the softness factor of three kinds of devices is respectively 1.2,1.3,0.75, therefore this new
The softness factor of the RC-IGBT of structure is suitable with tradition RC-IGBT, and relatively traditional PIN diode softness factor promotes 37%.
The as soft Reverse recovery when the softness factor is greater than 1.Traditional PIN diode is not only very hard Reverse recovery, but also is existed
Snap-off and phenomena such as current fluctuation, and for new construction RC-IGBT and traditional RC-IGBT be then not present Snap-off and
Current fluctuation phenomenon.RC-IGBT in addition to this new construction can be seen that by Reverse recovery voltage curve in figure, it is other all to exist
Situations such as voltage overshoot and fluctuation, for traditional PIN diode, this phenomenon is the reason is that due to the Snap-off of electric current and high
Caused by di/dt, and for traditional RC-IGBT, the mechanism of the fluctuation of backward voltage is exhausted because in reversely restoring process
Caused by the imbalance of layer, and basic reason is to be being unevenly distributed for electric current in device, in the pumping of Reverse recovery carrier
The concussion of Current Voltage is resulted in during taking.
Figure 11 is new construction RC-IGBT, traditional RC-IGBT and device in the reversely restoring process of traditional PIN diode
Internal current profiles versus figure, as seen from the figure new construction RC-IGBT and traditional RC-IGBT reversely extract electric current when, due to
P-Collector can constantly inject hole into drift region, this prevents carrier was extracted by moment in drift region, guarantee
Reverse recovery current is slowly reduced, and this also explains new construction RC-IGBT in Figure 11 and traditional RC-IGBT Reverse recovery electricity
Snap-off and current fluctuation phenomenon is not present in stream.And traditional PIN diode is since there is no P-Collector, reversed extensive
During multiple, the carrier in drift region is extracted by moment, thus causes the mutation of Current Voltage, that is, there is electric current
The overshoot phenomenon of Snap-off phenomenon and voltage.
In conclusion a kind of RC-IGBT for controlling knot terminal integral body diode by MOSFET proposed by the invention
Device completely eliminates snapback phenomenon through simulating, verifying under forward conduction IGBT mode, and forward conduction voltage drop reduces
19.4%.Under reverse-conducting FWD mode, body diode is integrated with by knot terminal.The diode has soft anti-recovery
Characteristic, and in entire reversely restoring process no current and voltage fluctuation.In conclusion this new construction RC-IGBT is mentioned significantly
The high comprehensive performance of traditional RC-IGBT.
A kind of RC-IGBT device controlling knot terminal integral body diode by MOSFET proposed by the present invention, with signal
For Fig. 4, concrete methods of realizing includes: to choose N-type<100>crystal orientation zone melting single-crystal liner, and field oxidation etches active area, long
Grid oxygen deposits Poly grid (grid 13 of metal-oxide-semiconductor synchronously completes), the injection of P body, and N+ active area injects the (source electrode of MOSFET
11 synchronously complete with drain electrode 12), BPSG is deposited, emitter metal is punched and deposit, emitter metal is exposed and etched, back surface field
Stop layer injection, backside collector N-Collector (8) and collector P-Collector (9) ion implanting and annealing respectively.
Back metal, passivation etc..
In the process of implementation, according to the design requirement of specific device, one kind proposed by the present invention passes through MOSFET and controls
The RC-IGBT device of knot terminal integral body diode, the surface area MOS and drift region be it is variable, can be used for slot grid
In the RC-IGBT (such as Fig. 6) and superjunction super junction RC-IGBT (such as Fig. 7) of trench structure.In specific production,
Substrate material also can be used the semiconductor materials such as silicon carbide, GaAs, indium phosphide or germanium silicon to replace body in addition to that can use silicon Si material
Silicon.
Finally, it is stated that preferred embodiment above is only used to illustrate the technical scheme of the present invention and not to limit it, although logical
It crosses above preferred embodiment the present invention is described in detail, however, those skilled in the art should understand that, can be
Various changes are made to it in form and in details, without departing from claims of the present invention limited range.
Claims (2)
1. it is a kind of by MOSFET control knot terminal integral body diode RC-IGBT device, it is characterised in that: including from up to
The cathode layer of lower setting, the drift region N- (6), N buffer layer (7) and collecting zone, the collecting zone include the N collector region of same layer setting
(8) and P collector region (9) it, is arranged at intervals with several polygate electrodes (2) in the cathode layer, two neighboring polysilicon gate electricity
Interpolar forms active emitter (4), and each polygate electrodes are by SiO2Gate oxide (3) surrounds；Each active emitter
Lower section is provided with the area P-body (5), and the area P-body (5) are located at the top of the drift region N- (6), setting in the area P-body (5)
There is the N+ active area (1) connecting with active emitter；RC-IGBT is from left to right divided into active area, transition region and knot terminal
Area, the bottom of the knot termination environment are made of N collector region (8) completely；
MOSFET is provided in the equal potential belt (10) of the transition region, the source electrode (11) of MOSFET and drain electrode (12) are located at transition region
Equal potential belt (10) in, the grid (13) of MOSFET pipe is located at SiO2In gate oxide (3)；The source electrode (11) and knot of MOSFET is eventually
The metal of petiolarea is connected, drain electrode (12) is connected with the cathodic metal of active area, grid (13) with drain (12) and active area
Cathodic metal is connected, and the channel between source electrode and drain electrode, which is opened, to be controlled with off state by MOSFET grid (13).
2. a kind of RC-IGBT device that knot terminal integral body diode is controlled by MOSFET according to claim 1,
It is characterized in that: being arranged at intervals with several SiO in the cathode layer in the knot termination environment2Field oxide (15), two neighboring SiO2?
Oxide layer connects a field stop collar P-ring (14), and field stop collar P-ring is located in the drift region N-, field stop collar P-ring
It is connect with the anode of the RC-IGBT body diode being internally integrated, the cathode and N current collection of the body diode that RC-IGBT is internally integrated
Area's connection.
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| CN109256422B (en) * | 2017-07-12 | 2022-04-29 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device, manufacturing method thereof and electronic device |
| CN109755303B (en) * | 2017-11-01 | 2021-02-26 | 苏州东微半导体股份有限公司 | IGBT power device |
| US10813607B2 (en) * | 2018-06-27 | 2020-10-27 | Prismatic Sensors Ab | X-ray sensor, method for constructing an x-ray sensor and an x-ray imaging system comprising such an x-ray sensor |
| CN109742090B (en) * | 2019-01-10 | 2020-09-01 | 重庆邮电大学 | Composite RC-LIGBT device integrating LDMOS and LIGBT |
| JP7158317B2 (en) * | 2019-03-07 | 2022-10-21 | 三菱電機株式会社 | semiconductor equipment |
| CN110610986B (en) * | 2019-10-09 | 2023-03-14 | 重庆邮电大学 | RC-IGBT device integrating transverse freewheeling diode by using junction terminal |
| CN112885900B (en) * | 2019-11-29 | 2022-04-15 | 苏州东微半导体股份有限公司 | IGBT device |
| CN111834449B (en) * | 2020-07-27 | 2024-04-16 | 重庆邮电大学 | Quick turn-off RC-IGBT device with back double MOS structure |
| CN112234098A (en) * | 2020-10-27 | 2021-01-15 | 瑞能半导体科技股份有限公司 | Insulated gate bipolar transistor terminal |
| CN116314276B (en) * | 2023-05-12 | 2023-07-28 | 深圳市威兆半导体股份有限公司 | Semiconductor device with a semiconductor layer having a plurality of semiconductor layers |
| CN117650163A (en) * | 2023-10-31 | 2024-03-05 | 海信家电集团股份有限公司 | Semiconductor device with a semiconductor device having a plurality of semiconductor chips |
| CN117577675B (en) * | 2024-01-15 | 2024-04-12 | 汉轩微电子制造(江苏)有限公司 | IGBT device embedded with FRD and manufacturing method thereof |
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| CN103489908A (en) * | 2013-09-16 | 2014-01-01 | 电子科技大学 | RC-IGBT capable of eliminating negative resistance effect |
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| CN104779279A (en) * | 2015-04-10 | 2015-07-15 | 电子科技大学 | RC-IGBT (reverse-conducting insulated gate bipolar translator) capable of inhibiting snapback effect |
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| CN104779279A (en) * | 2015-04-10 | 2015-07-15 | 电子科技大学 | RC-IGBT (reverse-conducting insulated gate bipolar translator) capable of inhibiting snapback effect |
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