CN108447905A - A kind of superjunction IGBT with trench isolations gate structure - Google Patents
A kind of superjunction IGBT with trench isolations gate structure Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
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- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
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- 239000002019 doping agent Substances 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
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Abstract
The present invention relates to a kind of superjunction IGBT with trench isolations gate structure, belong to semiconductor power device technology field, including semiconductor substrate, semiconductor substrate includes the collector electrode metal layer (10) being cascading, P+ collecting zones (9) and the first conductive type buffer layer (8), the upper surface of first conductive type buffer layer (8) is respectively arranged with the first conductivity type columns (11) and the second conductivity type columns (7), groove type grid (1) is provided with above first conductivity type columns (11), the upper surface of embedded first conductivity type columns (11) of groove type grid (1), and it is isolated by dielectric (2) between groove type grid (1) and the first conductivity type columns (11).Emitter (12), the upper surface of the embedded second conductive Class Type column (7) of emitter (12) are provided with above second conductivity type columns (7).The present invention effectively reduces the Muller capacitance of traditional superjunction IGBT device, improves injection enhancement effect, reduces conduction voltage drop, improves the high frequency characteristics of device, reduces switching loss.
Description
Technical field
The invention belongs to semiconductor power device technology fields, are related to a kind of superjunction with trench isolations gate structure
IGBT。
Background technology
Insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) is that one kind passes through
The grid voltage control characteristic of Metal-Oxide Semiconductor field-effect transistor (MOSFET) and bipolar junction transistor (BJT)
Low on-resistance characteristic combine full-control type semiconductor devices with the whole body, have that voltage control, input impedance is big, driving power
The small, characteristics such as conducting resistance is small, current density is high, switching loss is low and working frequency is high.Performance outstanding IGBT, makes it in work
There is wide application in numerous industries such as industry, the energy, traffic.
In traditional silicon-based devices field, when the drift region of device be Uniform Doped, and drift about sector width be equal to planar junction
In 2/3 width of depletion region punctured, there are this certain proportionate relationships with conducting resistance Ron by breakdown voltage VB：Ron
=8.3 × 10-9 × VB2.5 (Ω cm2).This is the limitation of existing contradictory relation between conduction voltage drop and breakdown voltage,
That is " silicon limit " (the silicon limit) of people's legend.
1989, " silicon limit " was broken in a kind of proposition of new concept, it can obtain simultaneously lower power consumption and compared with
High switching speed.After prolonged improve and perfect, superjunction theory ultimately forms (Super junction
Theory).Super-junction structure becomes as the key technology of breakthrough " silicon limit ".Super-junction structure uses N-type semiconductor and P-type semiconductor phase
It is mutually alternately arranged to constitute drift region, transverse electric field is generated under the action of collector voltage by introducing PN junction, to carry out electricity
Lotus compensates, and the drift region of device all exhausts accordingly so that the voltage endurance of device is significantly improved.
In superjunction IGBT, since drift region N-type semiconductor and P-type semiconductor have all carried out high-concentration dopant, device is no longer
Conducting resistance is reduced by conductivity modulation effect, meanwhile, when superjunction IGBT is off state, acted in transverse electric field
Under, drift region is rapidly depleting, contributes to the removal of internal nonequilibrium carrier so that and device can rapidly switch off, so as to
Alleviate the contradiction between conduction voltage drop and turn-off power loss.
But the manufacture craft of superjunction IGBT device is similar with traditional IGBT, the N-type half of groove type grid and drift region
The parasitic capacitance of covering capacitance, emitter and grid between conductor all directly affects the size of Miller capacitance, so that into one
The switching characteristic of the influence superjunction IGBT device of step.
Invention content
In view of this, the purpose of the present invention is to provide a kind of superjunction IGBT with trench isolations gate structure, to
A kind of new construction superjunction IGBT that can meet current process mark is provided.
In order to achieve the above objectives, the present invention provides the following technical solutions：
A kind of superjunction IGBT with trench isolations gate structure, including semiconductor substrate, the semiconductor substrate include
The collector electrode metal layer 10 being cascading, P+ collecting zones 9 and the first conductive type buffer layer 8, first conduction type
The upper surface of buffer layer 8 is respectively arranged with the first conductivity type columns 11 and the second conductivity type columns 7, first conductivity type columns
11 and second conductivity type columns 7 outer surface and the collector electrode metal layer 10, P+ collecting zones 9 or the first conductive type buffer layer
8 outer surface flushes, and the top of first conductivity type columns 11 is provided with groove type grid 1, and the groove type grid 1 is embedded in
The upper surface of first conductivity type columns 11, and pass through between the groove type grid 1 and first conductivity type columns 11
Dielectric 2 is isolated；
The top of second conductivity type columns 7 is provided with groove-shaped emitter 12, and the groove-shaped emitter 12 is embedded in
The upper surface of second conductivity type columns 7, and pass through between the groove-shaped emitter 12 and second conductivity type columns 7
Dielectric 2 is isolated；
The outer surface of the grid 1 and the outer surface of the groove-shaped emitter 12 respectively with first conductivity type columns
11 and second the outer surfaces of conductivity type columns 7 flush；
The second conduction is provided on the projection portion upper surface of first conductivity type columns, 11 and second conductivity type columns 7
Type base area 6,6 both sides of the second conduction type base region by the dielectric 2 respectively with the grid 1 and the groove
Type emitter 12 is isolated, and 6 upper surface of the second conduction type base region is provided with the first conduction type source region 3 and second and leads
Electric type body contact zone 5, the upper surface flush of the first conduction type source region 3 and the second conduction type body contact zone 5, and the
The both sides of one conduction type source region 3 and the second conduction type body contact zone 5 by the dielectric 2 respectively with the grid 1
It is isolated with the groove-shaped emitter 12；
It is provided with transmitting among the upper surface of the first conduction type source region 3 and the second conduction type body contact zone 5
Pole 4, the upper surface of the emitter 4 and the upper surface flush or the emitter (4) of the dielectric 2 are integrally covered in institute
State the upper surface of dielectric (2).
Further, first conductivity type columns, 11 and second conductivity type columns 7 are according to the superjunction IGBT central axis
It is mirrored into symmetrically, and the doping concentration of the first conductivity type columns 11 and the second conductivity type columns 7 is equal.
Further, the groove type grid 1 and the groove-shaped emitter 12 is of same size, and it is more to be all made of heavy doping
Crystal silicon is made.
Further, the dielectric 2 is made of silicon oxide or silicon nitride.
Further, when the first conduction type position N-type, the second conduction type is p-type, when the first conduction type position p-type,
Second conduction type is N-type.
The beneficial effects of the present invention are：The present invention devises a kind of superjunction IGBT having trench isolations gate structure, leads to
It crosses and the base area of the top of drift region is divided into smaller region using groove-shaped collector, while grid being isolated.
Such novel structure effectively reduce parasitic capacitance between superjunction IGBT emitter metals and N columns and grid with
Miller capacitance between collector improves the high frequency characteristics of device, reduces switching loss, securely and reliably.
Description of the drawings
In order to keep the purpose of the present invention, technical solution and advantageous effect clearer, the present invention provides following attached drawing and carries out
Explanation：
Fig. 1 is the structural schematic diagram of existing N-type superjunction IGBT；
Fig. 2 is the structural schematic diagram according to the N-type superjunction IGBT of the embodiment of the present invention；
Icon and description of the drawings：1- groove type grids, 2- dielectrics, 3-N+ source regions, 4- emitters, the contact of 5-P+ bodies
Area, 6-P types base area, 7-P columns, 8-N types buffer layer, 9-P+ collecting zones, 10- collector electrode metals floor, 11-N columns, the groove-shaped hairs of 12-
Emitter-base bandgap grading.
Specific implementation mode
Below in conjunction with attached drawing, the preferred embodiment of the present invention is described in detail.
As shown in Figure 1, the sectional view of existing N-type superjunction IGBT device, wherein drift region is alternately arranged by P columns 7, N columns 11
It constitutes, the base areas P 6 above drift region are isolated by the groove type grid 1 above N columns 11, and groove type grid 1 and N columns
Between 11 by dielectric 2 carry out every.Wherein, the top of the base areas P 6 is additionally provided with N+ source regions 3 and P+ body contact zones 5.N+
Source region 3 and P+ body contact zones 5 carry out Ohmic contact with emitter 4.It is provided with N-type buffer layer 8, N below drift region
8 lower section of type buffer layer is provided with P+ collecting zones 9, the progress Ohmic contact of collector electrode metal layer 10 of collector injection region and lower section.
Alternatively distributed N columns 11 constitute the drift region of device, drift region with P columns 7 in the superjunction IGBT device on existing basis
When bearing forward voltage, the transverse electric field that alternately arranged N columns 11 are generated with P columns 7 is completely depleted by drift region, on the whole
It sees, the equivalent charge density of drift region will be down to very low, and ideally the positive and negative charge in drift region is fully compensated, similar
In intrinsic semiconductor.So that the longitudinal electric field of drift region is tended to be flat in this way, improves the whole pressure resistance of device.Simultaneously because N columns
11 have carried out high-concentration dopant with P columns 7 so that the conducting resistance of drift region is greatly reduced, and reduces the conducting of superjunction IGBT
Pressure drop.Meanwhile when superjunction IGBT is turned off, with the help of transverse electric field, remaining non-equilibrium current-carrying in drift region
Son will be excluded quickly, and device shutdown is rapid, reduces the turn-off power loss of device.
As shown in Fig. 2, in order to further carry turn-off speed, turn-off power loss is reduced, isolated gate channel structure has been invented
Superjunction IGBT, the present embodiment is by taking N-type superjunction IGBT as an example, including semiconductor substrate, and the setting of the drift region of semiconductor substrate is handed over
For the N columns 11 and P columns 7 of distribution, the top of wherein N columns 11 is provided with groove type grid 1, while the top of P columns 7 is provided with groove
Type emitter 12, and groove type grid 1, groove-shaped emitter 12 are isolated by dielectric 2 with N columns 11, P columns 7.Together
When N columns 11, P columns 7 width be respectively greater than groove type grid 1, groove-shaped emitter 12 width.In the N columns 11 in drift region
Have a common boundary with P columns 7 be arranged above the base areas P 6, and the base areas P 6 by groove type grid 1, groove-shaped emitter 12 carry out every
From.N+ source regions 3 and P+ body contact zones 5 are provided with above the base areas P.N+ source regions 3 and P+ body contact zones 5 with emitter 4 into
Row Ohmic contact.
Further, it is provided with N-type buffer layer 8 below the drift region of semiconductor substrate, is provided with below N-type buffer layer
P+ collecting zones 9, P+ collectors lower section carry out Ohmic contact with collector electrode metal layer 10.
In the embodiment of the present invention, P+ collecting zones 9 and collector electrode metal layer 10 are used to form the collector of IGBT device, together
When emitter 4 and groove-shaped emitter 12 form the emitter of IGBT device, pass through groove type grid 1 and form IGBT device
Grid.
In the embodiment of the present invention, in the forward blocking state, transverse p/n junction exists the groove-shaped superjunction IGBT of isolated gate
Collector voltage effect is lower to generate transverse electric field, and the charge for being mutually compensates for, and entire drift region all exhausts accordingly, and device is resistance to
Pressure characteristic is effectively improved.When IGBT is in forward conduction state, the electronics in N+ source regions 3 enters drift region from introspection layer
N columns 11, P+ collecting zones 9 also by N-type buffer layer 8 to N columns 11 inject hole, but by internal drift region P/N columns adulterate
The influence of concentration, the conduction mode of device have certain difference with traditional non-superjunction IGBT.Electronic current and hole current point
It is not flowed in N columns 11 and P columns 7, the electric current of superjunction IGBT at this time transports for monopole.
The base areas P 6 and groove type grid 1 are isolated by groove-shaped emitter 12 in the present invention, it is such novel
Structure effectively reduce parasitic capacitance between superjunction IGBT emitters 4 and N columns 11 and groove type grid 1 and current collection
Miller capacitance between pole 10 improves the high frequency characteristics of device, reduces switching loss, securely and reliably.
Finally illustrate, preferred embodiment above is only to illustrate the technical solution of invention and unrestricted, although passing through
Above preferred embodiment is described in detail the present invention, however, those skilled in the art should understand that, can be in shape
Various changes are made in formula and to it in details, without departing from claims of the present invention limited range.
Claims (5)
1. a kind of superjunction IGBT with trench isolations gate structure, including semiconductor substrate, the semiconductor substrate include according to
The secondary collector electrode metal layer (10) being stacked, P+ collecting zones (9) and the first conductive type buffer layer (8), described first is conductive
The upper surface of type buffer layer (8) is respectively arranged with the first conductivity type columns (11) and the second conductivity type columns (7), and described first
The outer surface of conductivity type columns (11) and the second conductivity type columns (7) and the collector electrode metal layer (10), P+ collecting zones (9) or
The outer surface of first conductive type buffer layer (8) flushes, it is characterised in that：The top of first conductivity type columns (11) is arranged
There are groove type grid (1), the upper surface of embedded first conductivity type columns (11) of the trench-gate (1), and the groove
It is isolated by dielectric (2) between type grid (1) and first conductivity type columns (11)；
Groove-shaped emitter (12) is provided with above second conductivity type columns (7), the groove-shaped emitter (12) is embedding
Enter the upper surface of second conductivity type columns (7), and the groove-shaped emitter (12) and second conductivity type columns (7)
Between be isolated by dielectric (2)；
The outer surface of the groove type grid (1) and the outer surface of the groove-shaped emitter (12) are conductive with described first respectively
The outer surface of type column (11) and the second conductivity type columns (7) flushes；
The second conduction is provided on the projection portion upper surface of first conductivity type columns (11) and the second conductivity type columns (7)
Type base area (6), the second conduction type base region (6) both sides by the dielectric (2) respectively with the groove-shaped grid
Pole (1) and the groove-shaped emitter (12) are isolated, and the second conduction type base region (6) upper surface is provided with first and leads
Electric type source region (3) and the second conduction type body contact zone (5), the first conduction type source region (3) and the second conduction type
The upper surface flush of body contact zone (5), and the both sides of the first conduction type source region (3) and the second conduction type body contact zone (5)
It is isolated respectively with the groove type grid (1) and the groove-shaped emitter (12) by the dielectric (2)；
It is provided with transmitting among the upper surface of the first conduction type source region (3) and the second conduction type body contact zone (5)
Pole (4), the upper surface of the emitter (4) are integrally covered with the upper surface flush of the dielectric (2) or the emitter (4)
It is placed on the upper surface of the dielectric (2).
2. a kind of superjunction IGBT with trench isolations gate structure according to claim 1, it is characterised in that：Described
One conductivity type columns (11) and the second conductivity type columns (7) are mirrored into symmetrically according to the superjunction IGBT central axis, and first
The doping concentration of conductivity type columns (11) and the second conductivity type columns (7) is equal.
3. a kind of superjunction IGBT with trench isolations gate structure according to claim 1, it is characterised in that：The ditch
Groove profile grid (1) is of same size with the groove-shaped emitter (12), and is all made of heavily doped polysilicon and is made.
4. a kind of superjunction IGBT with trench isolations gate structure according to claim 1, it is characterised in that：It is described exhausted
Edge medium (2) is made of silicon oxide or silicon nitride.
5. a kind of superjunction IGBT with trench isolations gate structure according to claim 1, it is characterised in that：When first
When the N-type of conduction type position, the second conduction type is p-type, and when the first conduction type position p-type, the second conduction type is N-type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810229398.4A CN108447905A (en) | 2018-03-20 | 2018-03-20 | A kind of superjunction IGBT with trench isolations gate structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810229398.4A CN108447905A (en) | 2018-03-20 | 2018-03-20 | A kind of superjunction IGBT with trench isolations gate structure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109300975A (en) * | 2018-09-29 | 2019-02-01 | 电子科技大学 | A kind of slot grid bipolar junction transistor with low EMI noise characteristic |
| CN114221067A (en) * | 2021-11-13 | 2022-03-22 | 四川英能基科技有限公司 | Battery cathode structure, battery and preparation method |
| CN114927562A (en) * | 2022-07-20 | 2022-08-19 | 深圳平创半导体有限公司 | Silicon carbide JFET device structure and preparation method thereof |
| CN116364772A (en) * | 2023-04-11 | 2023-06-30 | 上海超致半导体科技有限公司 | Super-junction IGBT power device and preparation method |
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| US20090315070A1 (en) * | 2008-05-15 | 2009-12-24 | Fuji Electric Device Technology Co., Ltd. | Semiconductor device |
| US20140061720A1 (en) * | 2010-03-24 | 2014-03-06 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN107768436A (en) * | 2017-10-20 | 2018-03-06 | 电子科技大学 | A kind of trench gate electric charge memory type IGBT and its manufacture method |
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2018
- 2018-03-20 CN CN201810229398.4A patent/CN108447905A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090315070A1 (en) * | 2008-05-15 | 2009-12-24 | Fuji Electric Device Technology Co., Ltd. | Semiconductor device |
| US20140061720A1 (en) * | 2010-03-24 | 2014-03-06 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN107768436A (en) * | 2017-10-20 | 2018-03-06 | 电子科技大学 | A kind of trench gate electric charge memory type IGBT and its manufacture method |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109300975A (en) * | 2018-09-29 | 2019-02-01 | 电子科技大学 | A kind of slot grid bipolar junction transistor with low EMI noise characteristic |
| CN109300975B (en) * | 2018-09-29 | 2021-03-30 | 电子科技大学 | Trench gate bipolar transistor with low electromagnetic interference noise characteristic |
| CN114221067A (en) * | 2021-11-13 | 2022-03-22 | 四川英能基科技有限公司 | Battery cathode structure, battery and preparation method |
| CN114221067B (en) * | 2021-11-13 | 2023-05-09 | 四川英能基科技有限公司 | Battery cathode structure, battery and preparation method |
| CN114927562A (en) * | 2022-07-20 | 2022-08-19 | 深圳平创半导体有限公司 | Silicon carbide JFET device structure and preparation method thereof |
| CN116364772A (en) * | 2023-04-11 | 2023-06-30 | 上海超致半导体科技有限公司 | Super-junction IGBT power device and preparation method |
| CN116364772B (en) * | 2023-04-11 | 2024-01-30 | 上海超致半导体科技有限公司 | Super-junction IGBT power device and preparation method |
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Application publication date: 20180824 |