CN109742090B - Composite RC-LIGBT device integrating LDMOS and LIGBT - Google Patents

Composite RC-LIGBT device integrating LDMOS and LIGBT Download PDF

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CN109742090B
CN109742090B CN201910023563.5A CN201910023563A CN109742090B CN 109742090 B CN109742090 B CN 109742090B CN 201910023563 A CN201910023563 A CN 201910023563A CN 109742090 B CN109742090 B CN 109742090B
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ligbt
collector
ldmos
composite
traditional
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CN109742090A (en
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陈伟中
李顺
黄义
贺利军
秦窈
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Chongqing University of Post and Telecommunications
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Chongqing University of Post and Telecommunications
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Abstract

The invention discloses a composite RC-LIGBT device integrating LDMOS and LIGBT, which comprises an LDMOS active region and an LIGBT active region, wherein the left side and the right side of the device are in a symmetrical structure and share one emitter; the LDMOS active region channel is controlled by a grid electrode I, the LIGBT active region channel is controlled by a grid electrode II, and a metal collector electrode I is connected with the metal collector electrode II. Has the following advantages: eliminating snapback effect when conducting in forward direction; due to the existence of the Collector N-Collector in the LDMOS region, the LDMOS region has reverse conduction capability when being conducted in the reverse direction, and due to the fact that the Collector P-Collector does not have a current blocking effect, the reverse conduction capability of the composite RC-LIGBT is superior to that of a traditional RC-LIGBT. The composite RC-LIGBT process is compatible with the traditional RC-LIGT process, only layout design is needed, and no additional process is needed.

Description

Composite RC-LIGBT device integrating LDMOS and LIGBT
Technical Field
The invention belongs to the field of power semiconductor devices, and particularly relates to a composite RC-LIGBT device integrating LDMOS and LIGBT.
Background
LDMOS (Laterally Diffused Metal Oxide Semiconductor) is a commonly used power Semiconductor device; in addition to having a drift region that can significantly improve the breakdown voltage of the device; meanwhile, the switch has the advantages of high switching speed, easiness in integration, anti-parallel diodes integrated inside and the like, and is widely applied to the high-voltage and high-frequency field. However, since the LDMOS is only electrically conducted by a single electron when it is forward-turned on, there are disadvantages of low current density, large forward-turned on resistance, and the like.
The LIGBT (Lateral Insulated Gate Bipolar Transistor) is originally formed by modifying an LDMOS (laterally diffused metal oxide semiconductor), is a composite semiconductor device integrating the advantages of the LDMOS and a BJT (Bipolar junction Transistor), has the advantages of Gate voltage control, large current density, small conduction voltage drop and the like, and is widely applied to the fields of high-speed rail vehicles, new energy equipment, various electronic consumption and the like at present. However, since the LIGBT has no reverse conducting capability, in practical use, it is usually necessary to connect a reverse freewheeling diode beside the LIGBT for protection. Meanwhile, in order to improve the integration degree of the device and reduce the manufacturing cost, people begin to try to integrate a protective freewheeling diode into the LIGBT, a partial Collector P-Collector of the LIGBT is replaced by an N-Collector, and a P-body/N-drift/N-Collector freewheeling diode is integrated into the Transistor to form an RC-LIGBT (Reverse-Conducting laterally insulated Gate Bipolar Transistor).
The conventional RC-LIGBT still has some non-negligible disadvantages in use: for example, when the Collector is in forward conduction, electrons injected into the drift region from the emitter flow out of the Collector through the N-Collector at first due to the existence of the Collector N-Collector, and only the electrons conduct at this time, which is called a unipolar conduction mode; as the current flowing through the P-Collector (14) is gradually increased, the voltage V between the PN junction formed by the P-Collector and the N-drift regionPNWill gradually increase when VPNWhen the voltage is more than or equal to 0.7V, a PN junction is conducted, a large number of holes are injected into an N-drift region from a P-Collector, a conductance modulation effect is generated, a transistor enters a bipolar conductance mode, a voltage rebound phenomenon is generated when the voltage is reflected on a positive conduction curve, voltage and current on the curve are subjected to sudden change, namely a negative resistance effect, also called snapback effect, is generated, and the phenomenon brings a series of problems so as to influence the reliability of an RC-LIGBT device, for example, the phenomenon can cause overlarge local current, so that the device cannot normally work or even is burnt, and further the breakdown of the whole circuit is caused.
Therefore, in order to better promote the application of the RC-LIGBT, the RC-LIGBT needs to be further improved to avoid the snapback effect, so as to enhance the reliability of the RC-LIGBT device.
Disclosure of Invention
In view of the above, the present invention is directed to a composite RC-LIGBT device integrating LDMOS and LIGBT.
In order to achieve the above purpose, the invention provides the following technical scheme:
a composite RC-LIGBT device integrating LDMOS and LIGBT comprises a left LDMOS active region and a right LIGBT active region, and the left side and the right side of the composite RC-LIGBT device are of symmetrical structures.
Preferably, a metal Collector I12, a Collector N-Collector 11, an N-drift region 9, an N-buffer I10, a gate oxide I4, a gate I3, an N + electron emitter I2, an emitter 1 and a P-body 6 are arranged in the LDMOS active region from left to right, and a dielectric isolation layer 16 and a substrate 17 are arranged below the LDMOS active region.
Preferably, the LIGBT active region is provided with a metal Collector II 15, a Collector P-Collector14, an N-buffer II 13, an N-drift region 9, a gate oxide II 8, a gate II 7, a P-body 6, an N + electron emitter II 5, an emitter 1 and a P-body 6 from right to left, and a dielectric isolation layer 16 and a substrate 17 are arranged below the LIGBT active region.
Preferably, the LDMOS active region and the LIGBT active region share the P-body 6, the emitter 1, the N-drift region 9, the dielectric isolation layer 16 and the substrate 17, and the dielectric isolation layer 16 and the substrate 17 are sequentially arranged below the N-drift region 9.
Preferably, the layout of the composite RC-LIGBT device is in a circular structure or a square structure.
Preferably, the layout of the composite RC-LIGBT device is divided into four layers from inside to outside:
the first layer is the centremost emitter 1;
the left side of the second layer is provided with a grid I3, the right side of the second layer is provided with a grid II 7, and the grid I is connected with the grid II;
the third layer is an N-drift region 9 shared by the LDMOS active region and the LIGBT active region which are connected;
and the Collector N-Collector 11 is arranged on the left side of the outermost layer, the Collector P-Collector14 is arranged on the right side of the outermost layer, and the metal Collector I12 of the Collector N-Collector is connected with the metal Collector II 15 of the Collector P-Collector14 in use.
Preferably, the grid I3 is connected with the grid II 8, and the metal collector I12 is connected with the metal collector II 15.
Preferably, the length, the width and the concentration of the N + electron emitter I2 and the N + electron emitter II 5 are consistent.
The invention has the beneficial effects that: the composite RC-LIGBT device integrating the LDMOS and the LIGBT has the following advantages:
(1) when the diode is conducted in the forward direction, the unipolar conducting mode and the bipolar conducting mode of the traditional RC-LIGBT are distributed to two different areas of the LDMOS region and the LIGBT region to realize the purpose, so that a snapback effect generated when the two conducting modes are converted is avoided;
(2) when the reverse breakdown occurs, when the concentration of the N-drift region reaches a certain value, a common depletion region is formed in the center of the transistor, a carrier channel can be formed at the bottom of the transistor, the breakdown current is led to a Collector N-Collector of an LDMOS active region from an LIGBT active region of the composite RC-LIGBT device, and the reverse withstand voltage is improved by increasing the path of the breakdown current;
(3) when the composite RC-LIGBT device is conducted reversely, the Collector N-Collector in the LDMOS region of the composite RC-LIGBT device exists, so that the composite RC-LIGBT device has reverse conducting capability, and compared with the traditional RC-LIGBT, the composite RC-LIGBT device does not have the blocking effect of the Collector P-Collector on reverse conducting current when being conducted reversely, so that the reverse conducting capability of the composite RC-LIGBT device is superior to that of the traditional RC-LIGBT;
(4) the composite RC-LIGBT process is compatible with the traditional RC-LIGT process, only the layout design needs to be changed, and no additional process is needed.
Drawings
In order to make the purpose, technical scheme and beneficial effect of the invention more clear, the invention provides the following drawings:
FIG. 1 is a diagram of a layout and a structure of a conventional LDMOS device;
FIG. 2 is a schematic diagram of a layout and a structure of a conventional LIGBT device;
FIG. 3 is a schematic diagram of a layout and a structure of a conventional RC-LIGBT device;
FIG. 4 is a schematic diagram of a circular layout structure of a composite RC-LIGBT device integrating an LDMOS and an LIGBT according to the present invention;
FIG. 5 is a schematic diagram of a square layout structure of a composite RC-LIGBT device integrating an LDMOS and an LIGBT according to the present invention;
FIG. 6 is a cross-sectional structural diagram of a composite RC-LIGBT device integrating an LDMOS and an LIGBT according to the present invention;
FIG. 7 shows a drift region concentration of 3.5 × 1014Comparing breakdown voltages of the traditional LDMOS, the traditional LIGBT, the traditional RC-LIGBT and the new structure composite RC-LIGBT;
FIG. 8 shows the concentration in the drift region of 5 × 1013、1.5×1014、2.5×1014And 3.5 × 1014The avalanche breakdown voltage change trend graphs of the traditional LDMOS, the traditional LIGBT, the traditional RC-LIGBT and the new structure composite RC-LIGBT are shown in the specification;
FIG. 9 shows the concentration in the drift region of 5 × 1013、1.5×1014、2.5×1014And 3.5 × 1014The breakdown current of the new structure composite RC-LIGBT is shown schematically;
FIG. 10 shows the concentration in the drift region of 5 × 1013、1.5×1014、2.5×1014And 3.5 × 1014A three-dimensional electric field schematic diagram of the new structure composite RC-LIGBT during breakdown;
FIG. 11 shows the concentration in the drift region of 7 × 1013Comparing current and voltage changes of the traditional LDMOS, the traditional LIGBT, the traditional RC-LIGBT and the new structure composite RC-LIGBT when the current and the voltage are conducted in the forward direction;
FIG. 12 shows the concentration in the drift region of 5 × 1013、1.5×1014、2.5×1014And 3.5 × 1014When the voltage is measured, the forward conducting voltage change trend graphs of the traditional LDMOS, the traditional LIGBT, the traditional RC-LIGBT and the new structure composite RC-LIGBT are shown;
FIG. 13 shows the concentration in the drift region of 5 × 1013、1.5×1014、2.5×1014、3.5×1014Comparing current-voltage curves of the composite RC-LIGBT with the new structure in a forward conduction state;
FIG. 14 shows a drift region concentration of 7 × 1013When the current distribution diagram of the new structure composite RC-LIGBT is in a forward conduction state;
FIG. 15 shows the concentration in the drift region of 7 × 1013Comparing current-voltage curves of the traditional LDMOS, the traditional RC-LIGBT and the composite RC-LIGBT with the new structure when the traditional LDMOS, the traditional RC-LIGBT and the composite RC-LIGBT are conducted in the reverse direction;
FIG. 16 shows the concentration in the drift region of 5 × 1013、1.5×1014、2.5×1014And 3.5 × 1014The reverse conducting voltage change trend graphs of the traditional LDMOS, the traditional LIGBT, the traditional RC-LIGBT and the new structure composite RC-LIGBT are shown;
FIG. 17 shows a drift region concentration of 7 × 1013Comparing current distribution of the traditional LDMOS, the traditional RC-LIGBT and the composite RC-LIGBT with the new structure in reverse conduction;
FIG. 18 shows a drift region concentration of 7 × 1013Comparing the turn-off time of the traditional LDMOS, the traditional RC-LIGBT and the new structure composite RC-LIGBT;
the field emission device comprises a substrate, a metal Collector, a gate oxide layer, a Collector, a substrate, a metal emitter, a grid electrode I, a grid oxide layer I, a grid electrode II, a P-body, a grid electrode II, a grid oxide layer II, a grid electrode drift region N, a Collector electrode N-Collector 11, a metal Collector electrode I, a metal Collector electrode II, a grid electrode N-Collector.
Detailed Description
The preferred embodiments of the present invention will be described in detail below. The experimental procedures, in which specific conditions are not specified in the examples, are generally carried out under conventional conditions or under conditions recommended by the manufacturers.
Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
The cross-sectional structure of a composite RC-LIGBT device integrating LDMOS and LIGBT is shown in FIG. 6: the LDMOS region and the LIGBT region are divided from left to right. The LDMOS region is provided with a metal Collector I12, a Collector N-Collector 11, an N-drift region 9, an N-buffer I10, a gate oxide layer I4, a grid I3, an N + electron emitter I2, an emitter 1 and a P-body 6 from left to right, and a dielectric isolation layer 16 and a substrate 17 are arranged below the LDMOS region; and a metal Collector II 15, a Collector P-Collector14, an N-buffer II 13, an N-drift region 9, a gate oxide II 8, a grid II 7, a P-body 6, an N + electron emitter II 5, an emitter 1 and a P-body 6 are arranged in the LIGBT region from right to left, and a dielectric isolation layer 16 and a substrate 17 are arranged below the LIGBT region.
The LDMOS region and the LIGBT region share the P-body 6, the emitter 1, the N-drift region 9, the dielectric isolation layer 16 and the substrate 17; the metal collector I12 is connected with the metal collector II 15, the grid I13 is connected with the grid II 8, and the length, the width and the concentration of the N + electron emitter I2 and the N + electron emitter II 5 are consistent.
The invention provides a composite RC-LIGBT device integrating LDMOS and LIGBT, wherein a circular layout structure and a square layout structure are respectively shown in a figure 4 and a figure 5, and a cross-sectional structure is shown in a figure 6. The layout of a composite RC-LIGBT device integrating LDMOS and LIGBT can be designed into a round structure as shown in FIG. 4 and a square structure as shown in FIG. 5: when the layout is designed into a circular structure, the whole layout is in a circular structure, the left side of the layout is an LDMOS active region, the right side of the layout is an LIGBT active region, and the left side and the right side of the layout are in a symmetrical structure; the grid electrode structure can be divided into 4 layers from inside to outside, the first layer is a shared circular emitter at the center, the left side of the second layer is a grid electrode I, the right side of the second layer is a grid electrode II, and the grid electrode I is connected with the grid electrode II; the third layer is a drift region of the LDMOS active region and the LIGBT active region which are connected, the left side of the outermost layer is a Collector N-Collector, the right side of the outermost layer is a Collector P-Collector, and metal collectors of the Collector N-Collector and the Collector P-Collector (namely a metal Collector I of the Collector N-Collector and a metal Collector II of the Collector P-Collector) are connected in use; when the layout is designed into a square structure as shown in fig. 5, the whole layout is a square structure, similar to a round structure, the left side of the layout is an LDMOS active region, the right side is an LIGBT active region, and the left side and the right side are symmetrical structures; the grid electrode structure can be divided into 4 layers from inside to outside, the first layer is a shared square emitter at the center, the left side of the second layer is a grid electrode I, the right side of the second layer is a grid electrode II, and the grid electrode I is connected with the grid electrode II; the third layer is a drift region of the LDMOS active region and the LIGBT active region which are connected, the Collector N-Collector is arranged on the left side of the outermost layer, the Collector P-Collector is arranged on the right side of the outermost layer, and metal collectors (namely the metal Collector I of the Collector N-Collector and the metal Collector II of the Collector P-Collector) of the Collector N-Collector and the Collector P-Collector are connected in use.
The mechanism of the composite RC-LIGBT provided by the invention is as follows:
(1) when the diode is conducted in the forward direction, the unipolar conduction mode and the bipolar conduction mode of the traditional RC-LIGBT are distributed to two different areas of the LDMOS region and the LIGBT region, and therefore the snapback effect generated when the two conduction modes are converted is avoided.
(2) When the reverse breakdown occurs, when the concentration of the N-drift region reaches a certain value, a common depletion region is formed in the center of the transistor, a carrier channel can be formed at the bottom of the transistor, the breakdown current is led to a Collector N-Collector of the LDMOS region from the LIGBT region of the composite RC-LIGBT device, and the purpose of improving the reverse withstand voltage is achieved by increasing the path of the breakdown current;
(3) when the composite RC-LIGBT device is conducted reversely, the Collector N-Collector in the LDMOS region of the composite RC-LIGBT device exists, so that the composite RC-LIGBT device has reverse conducting capability, and compared with the traditional RC-LIGBT, the composite RC-LIGBT device does not have the blocking effect of the Collector P-Collector on reverse conducting current when being conducted reversely, so that the reverse conducting capability of the composite RC-LIGBT device is superior to that of the traditional RC-LIGBT;
(4) the composite RC-LIGBT process is compatible with the traditional RC-LIGT process, only the layout design needs to be changed, and no additional process is needed.
The traditional LDMOS device shown in the figure 1, the traditional LIGBT device shown in the figure 2, the traditional RC-LIGBT device shown in the figure 3 and the composite RC-LIGBT device shown in the figure 6 are provided by means of MEDICI simulation software, and in the simulation process, the traditional LDMOS device, the traditional LIGBT device, the traditional RC-LIGBT device and the composite RC-LIGBT device of the invention have the same simulation parameters, wherein the thickness of an N-drift region is 25 mu m, the service life of a current carrier is 10 mu s, and the ambient temperature is 300K. The length of the traditional LDMOS device, the length of the LIGBT device and the length of the traditional RC-LIGBT device are 17 micrometers, the length of the composite RC-LIGBT device is 34 micrometers, the LDMOS active region and the LIGBT active region are respectively 17 micrometers, and the doping concentration is adjustable.
Fig. 7 shows that the N-drift region concentration is 3.5 × 10 at room temperature when T is 300K14Comparing breakdown voltages of the traditional LDMOS device, the traditional LIGBT device, the traditional RC-LIGBT device and the composite RC-LIGBT device;according to simulation results, under the condition of the same parameters, the breakdown voltage values of the traditional LDMOS device and the traditional RC-LIGBT device are almost equal and are about 102V, because the traditional LDMOS device and the traditional RC-LIGBT device bear reverse withstand voltage due to PN junctions formed by internal P-body/N-drift/N-Collector under the concentration of the drift region, and the withstand voltage principle is the same; under the concentration, the breakdown voltage of the composite RC-LIGBT device is slightly higher than that of a traditional LDMOS device and a traditional RC-LIGBT device, the breakdown voltage of the composite RC-LIGBT device is about 103V, and the voltage resistance of the composite RC-LIGBT device is good. The traditional IGBT device is equivalent to a PNP triode with reverse withstand voltage, and under the same condition, the withstand voltage capability of a PN junction is stronger than that of the PNP triode, so that the withstand voltage capability of the IGBT is the worst and is about 59V.
FIG. 8 shows the concentration in the drift region of 5 × 1013、1.5×1014、2.5×1014And 3.5 × 1014The breakdown voltage of the traditional LDMOS device and the traditional LIGBT device is in a descending trend along with the increase of the concentration of a drift region, the breakdown voltage of the traditional RC-LIGBT device is still far higher than that of the traditional LIGBT device under the same concentration, the breakdown voltage of the traditional RC-LIGBT device is in a trend of increasing firstly and then decreasing secondly, and after the breakdown voltage of the traditional RC-LIGBT device is decreased, the breakdown voltage of the traditional LDMOS device is almost equal to that of the traditional LDMOS device under the same concentration of the drift region14Increased to 2.5 × 1014When the breakdown voltage increased from 73V to 104V.
FIG. 9 shows the concentration in the drift region of 5 × 1013、1.5×1014、2.5×1014And 3.5 × 1014The breakdown current of the composite RC-LIGBT device is shown in the figure, and when the concentration of the drift region is 5 × 1013When the concentration of the drift region is increased to 1.5 × 10, the breakdown voltage is lower, and when the concentration of the drift region is increased to 1.5 × 1014When the concentration of the drift region is 2.5 × 10, the required voltage for avalanche breakdown is lower because the number of carriers is increased due to the increase of the concentration of the drift region and the collision of conductive particles is easier during reverse voltage withstanding, and when the concentration of the drift region is 2.5 × 1014The LDMOS active region and the LIGBT active region are overlapped in a larger area, a common depletion region is formed in the middle of the LDMOS active region and the LIGBT active region, a large number of holes are repelled to the lower portion of the transistor, meanwhile, a PN junction formed by the substrate and the drift region also forms a depletion layer at the bottom of the drift region of the transistor, a carrier channel capable of allowing electrons to pass is formed with the common depletion region, the channel is simultaneously connected with a Collector N-Collector of the LDMOS active region, positive voltage is simultaneously applied to a metal Collector I and a metal Collector II of the LDMOS active region and the LIGBT active region during reverse voltage resistance, most of breakdown current in the LIGBT active region flows to the N-Collector of the LDMOS active region along the carrier channel due to the fact that the N-Collector of the LDMOS active region is low in potential barrier relative to the electrons, the path of the breakdown current increases, the breakdown voltage at the moment tends to rise, and the concentration in the drift region is 1.5 351014Increased to 2.5 × 1014When the concentration of the drift region is increased to 3.5 × 1014And when the breakdown voltage reaches the maximum value, the breakdown voltage is in a descending trend along with the continuous increase of the concentration of the drift region, and the principle of the breakdown voltage is the same as that of the breakdown voltage descending of the LIGBT active region when the LIGBT active region breaks down.
FIG. 10 shows the concentration in the drift region of 5 × 1013、1.5×1014、2.5×1014And 3.5 × 1014The three-dimensional electric field schematic diagram of the composite RC-LIGBT device in breakdown is shown; it can be seen that the change in electric field occurs in the top half of the device at all four concentrationsPart, two sudden changes of the electric field approximately occur at x-13 and x-21, which correspond to the P-body/N-drift junctions of the channels of the LDMOS active region and the LIGBT active region in the figure, respectively, so that it can be seen that the PN junction at the channel of the transistor with the new structure is the weakest and the most easily broken down when the reverse voltage is applied, and the concentration of the drift region is from 5 × 1013The electric field strength at the abrupt change begins to increase.
FIG. 11 simulates the case when the drift region concentration is 7 × 1013Meanwhile, the traditional LDMOS device, the traditional LIGBT device, the traditional RC-LIGBT device and the composite RC-LIGBT device are in a forward conduction diagram; in the forward conducting state, i.e. Vg＝15V，VEmitter＝0V，VCollectorAt (+ V), the collector current of the conventional LDMOS device is small and increases linearly with the increase of the collector voltage due to only a single electron conduction, and is slightly higher than that of the conventional RC-LIGBT device before snapback occurs. The traditional RC-LIGBT device generates snapback effect when the current is about 65A, and generates voltage rebound phenomenon. The traditional LIGBT device almost has no current before the collector voltage is about 0.7V, then the conductance modulation effect occurs due to the conduction of an internal triode, and the current is rapidly increased along with the increase of the collector voltage; the composite RC-LIGBT device has the advantages that the electron current of the LDMOS active region is dominant when the collector voltage is just added, the LIGBT active region starts to inject holes after the collector voltage is greater than 0.7V, the current of the LIGBT active region is dominant at the moment, and the device completely enters the LIGBT working mode along with the further increase of the collector voltage.
FIG. 12 simulates the concentration of 5 × 10 in the drift region13、1.5×1014、2.5×1014And 3.5 × 1014In the meantime, the forward conducting voltage of the traditional LDMOS device, the traditional LIGBT device, the traditional RC-LIGBT device and the composite RC-LIGBT device of the invention changes from a trend graph, namely the collector voltage value corresponding to the current density of 100A when the transistor is in the forward conducting state, and the simulation result shows that the concentration of the traditional LDMOS device in the drift region is from 5 × 1013Gradually increased to 3.5 × 1014At all times, its turn-on voltage is far highIn the other three transistors, the concentration of the drift region increases and the concentration of the drift region decreases, and the concentration of the drift region is 5 × 1013It is about 7.9V at 3.5 × 10V14The time is reduced to 3.2V, the variation trend is obvious compared with that of other three transistors, and the concentration of the on-state voltage of the traditional RC-LIGBT device in a drift region is 5 × 1013To 1.5 × 1014The drift region concentration is increased by a small amplitude and then is kept unchanged at 1.8V along with the increase of the drift region concentration; the on-state voltages of the traditional LIGBT device and the composite RC-LIGBT device are basically kept unchanged along with the change of the concentration of a drift region, the traditional LIGBT device is basically kept at 0.83V, the composite RC-LIGBT device is kept at 0.9V, and the on-state voltages of the traditional LIGBT device and the composite RC-LIGBT device are basically consistent because the traditional LIGBT and the composite RC-LIGBT device have a conductance modulation effect when the current density reaches 100A, and the current magnitude is mainly determined by the number of holes generated by a P-Collector and has little relation with the concentration of the drift region. In simulation, the concentrations of the sizes of the P-Collector of the traditional LIGBT device and the P-Collector of the composite RC-LIGBT device are kept consistent, so the hole emitting capacities of the traditional LIGBT device and the composite RC-LIGBT device are basically consistent, and the current density of the composite RC-LIGBT device is lower than that of the traditional LIGBT device under the condition that the numbers of current carriers are almost equal because the length of the composite RC-LIGBT device is larger than that of the traditional LIGBT device, so the on-state voltage of the traditional LIGBT device is slightly higher than that of the composite RC-LIGBT device.
FIG. 13 simulates the concentration of 5 × 10 in the drift region13、1.5×1014、2.5×1014、3.5×1014And comparing the current-voltage curve of the composite RC-LIGBT device in a forward conduction state. In the figure, a curve when the collector voltage is in the interval of 0 to 0.7V is represented by a, and a curve when the collector voltage is greater than 0.7V is represented by B. It can be seen from the graph that in the curve a, in the process of gradually increasing the collector voltage from 0 to 0.7V, the current density of the composite RC-LIGBT device of the present invention is smaller and linearly increases with the increase of the collector voltage, and the current density at the same collector voltage also increases significantly with the increase of the drift region concentration. From curve B, it can be seen that when collecting currentWhen the pole voltage is more than 0.7V, the current density of the composite RC-LIGBT device is rapidly increased, and the difference is small under different drift region concentrations.
FIG. 14 shows a drift region concentration of 7 × 1013In the invention, the current distribution diagrams of the composite RC-LIGBT device are respectively under the forward conduction states corresponding to the curve A and the curve B; as can be seen from the current diagram corresponding to curve a, when the Collector voltage is gradually increased from 0V to 0.7V, the on-current in the whole transistor is mainly generated by electrons in the LDMOS active region and flows out of the device through the Collector N-Collector, while almost no current is generated in the LIGBT active region, and at this time, the transistor operates in the unipolar conduction mode, and the internal current is small. When the voltage of the Collector is larger than 0.7V, namely corresponding to a current diagram corresponding to a curve B, at the moment, a PN junction formed by a P-Collector and a drift region is conducted, a large number of holes are injected into the drift region by the P-Collector, a conductance modulation effect occurs, the current of an LIGBT active region is increased rapidly, the current of the transistor is mainly determined by the number of holes emitted by the P-Collector, at the moment, the transistor works in a bipolar conduction mode, and no snapback effect is generated in the whole process.
FIG. 15 simulates the concentration at 7 × 10 in the drift region13Comparing current-voltage curves of the traditional LDMOS device, the traditional LIGBT device, the traditional RC-LIGBT device and the composite RC-LIGBT device in the invention when the traditional LDMOS device, the traditional LIGBT device, the traditional RC-LIGBT device and the composite RC-LIGBT device are conducted reversely; it can be seen that the reverse conduction current of the conventional LIGBT device is almost 0, because the conventional LIGBT device is equivalent to two back-to-back diodes when conducting in reverse direction and thus cannot conduct; the traditional LDMOS device and the traditional RC-LIGBT device have reverse conduction capability because a diode structure of a P-body/N-drift/N-Collector is integrated inside, and the composite RC-LIGBT device also has the diode structure in an LDMOS active region, so that reverse conduction can be realized. As can be seen from the simulation diagram, the reverse conducting capability of the traditional RC-LIGBT device is weaker than that of the traditional LDMOS device and the composite RC-LIGBT device, and the reverse conducting capability of the traditional LDMOS device is similar to that of the composite RC-LIGBT device.
FIG. 16 shows driftZone concentrations were 5 × 10 respectively13、1.5×1014、2.5×1014And 3.5 × 1014The traditional LDMOS device, the traditional RC-LIGBT device and the composite RC-LIGBT device have a reverse conducting voltage variation trend chart, wherein the reverse conducting voltage is the emitter voltage value corresponding to 100A of reverse conducting current when the transistor is conducted reversely, and the concentration of the drift region is 5 × 1013Gradually increased to 3.5 × 1014In time, the reverse turn-on voltage of the traditional RC-LIGBT device is larger than that of the traditional LDMOS and the RC-LIGBT with the new structure, and is gradually reduced to 0.98V from 1.98V. The reverse turn-on voltage of the traditional LDMOS device and the composite RC-LIGBT device is almost kept unchanged at 0.79V and 0.8V along with the change of the concentration of a drift region.
FIG. 17 shows a drift region concentration of 7 × 1013Comparing current distribution of the traditional LDMOS device, the traditional RC-LIGBT device and the composite RC-LIGBT device in the invention when the traditional LDMOS device, the traditional RC-LIGBT device and the composite RC-LIGBT device are conducted reversely; as can be seen from the figure, the conventional LDMOS device has reverse conduction capability due to the fact that a diode structure of a P-body/N-drift/N-Collector is integrated inside the conventional LDMOS device, and although the conventional RC-LIGBT device also has the same diode structure as the conventional LDMOS device, electrons flowing to the Collector N-Collector are laterally blocked due to the existence of the Collector P-Collector, and the path of the electrons flowing to the N-Collector is increased, so that the reverse conduction capability is weaker than that of the conventional LDMOS device; the composite RC-LIGBT device has the same diode structure as the traditional LDMOS device in the LDMOS active region, and has no influence of a P-Collector on reverse conduction current, so that the reverse conduction capability is similar to that of the traditional LDMOS device and is stronger than that of the traditional RC-LIGBT device.
FIG. 18 shows a drift region concentration of 7 × 1013And comparing the turn-off time of the traditional LDMOS device, the LIGBT device and the composite RC-LIGBT device. As can be seen from the figure, the turn-off time of the conventional LDMOS device is fastest and is about 0.1 microsecond, the turn-off time of the conventional LIGBT device is slowest and is about 0.8 microsecond, and the turn-off time of the composite RC-LIGBT device of the present invention is between the conventional LDMOS device and the conventional LIGBT device and is about 0.5 microsecond; this is because the present invention is superior to the conventional LIGBT deviceThe Collector N-Collector existing in the LDMOS active region of the invented composite RC-LIGBT device can accelerate the extraction of electrons when being turned off; compared with the traditional RC-LIGBT device, the path for extracting electrons during turn-off is longer than that of the traditional RC-LIGBT device, so the turn-off time is between the traditional LIGBT device and the traditional RC-LIGBT device.
In summary, simulation verification shows that (1) when the drift region concentration is from 5 × 10, the Reverse-Conducting laterally Insulated Gate Bipolar Transistor (Reverse-Insulated Gate Bipolar Transistor) of the composite RC-LIGBT device integrating the LDMOS and the LIGBT is provided by the invention13Increased to 3.5 × 1014When the concentration of the drift region is 3.5 × 10 in reverse breakdown14The breakdown voltage is 103V and is slightly higher than that of the traditional LDMOS device and the traditional RC-LIGBT device under the same concentration, (3) when reverse conduction is carried out, the concentration of a drift region is 5 × 1013Gradually increased to 3.5 × 1014And meanwhile, the reverse conducting voltage is smaller than that of the traditional RC-LIGBT device.
The invention provides a composite RC-LIGBT device integrating LDMOS and LIGBT, which takes a schematic diagram 6 as an example, and the specific implementation method comprises the following steps: selecting a single crystal substrate, generating a silicon dioxide medium isolation layer through oxidation, forming an SOI structure by an epitaxial N-drift region, forming a P-body region at the central part of a device through ion implantation, then simultaneously forming a buffer layer, a Collector N-Collector and an N + electron emission region through an ion implantation process, forming a Collector P-Collector through ion implantation, and finally putting a metal electrode.
Finally, in the implementation process, according to the design requirements of specific devices, the substrate material of the composite RC-LIGBT device integrating the LDMOS and the LIGBT can be silicon Si material, and can also be silicon carbide, gallium arsenide, indium phosphide or germanium silicon and other semiconductor materials instead of bulk silicon.
Finally, it is noted that the above-mentioned preferred embodiments illustrate rather than limit the invention, and that, although the invention has been described in detail with reference to the above-mentioned preferred embodiments, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope of the invention as defined by the appended claims.

Claims (5)

1. A composite RC-LIGBT device integrating LDMOS and LIGBT is characterized in that the composite RC-LIGBT device comprises a left LDMOS active region and a right LIGBT active region,
the composite RC-LIGBT device is divided into four layers from inside to outside:
the first layer is the centremost emitter (1);
the left side of the second layer is provided with a grid I (3), the right side of the second layer is provided with a grid II (7), and the grid I (3) is connected with the grid II (7);
the third layer is an N-drift region (9) shared by the LDMOS active region and the LIGBT active region which are connected;
and the outermost layer is provided with a Collector N-Collector (11) on the left and a Collector P-Collector (14) on the right, and the metal Collector I (12) of the Collector N-Collector is connected with the metal Collector II (15) of the Collector P-Collector14 in use.
2. A composite RC-LIGBT device integrating LDMOS and LIGBT according to claim 1 wherein the LDMOS active region is provided with a metal Collector i (12), a Collector N-Collector (11), an N-drift region (9), an N-buffer i (10), a gate oxide i (4), a gate i (3), an N + electron emitter i (2), an emitter (1), a dielectric isolation layer (16) and a substrate (17) from left to right;
the LIGBT active region is provided with a metal Collector II (15), a Collector P-Collector (14), an N-buffer II (13), an N-drift region (9), a gate oxide II (8), a grid II (7), a P-body (6), an N + electron emitter II (5), an emitter (1), a dielectric isolation layer (16) and a substrate (17) from right to left.
3. A composite RC-LIGBT device integrating LDMOS and LIGBT according to claim 2 wherein the LDMOS active region and LIGBT active region share P-body (6), emitter (1), N-drift region (9), dielectric isolation layer (16) and substrate (17), N-drift region (9) being under dielectric isolation layer (16) and substrate (17) in sequence.
4. The composite RC-LIGBT device integrating the LDMOS and the LIGBT as claimed in claim 1, wherein the composite RC-LIGBT device has a circular structure or a square structure in layout.
5. The integrated LDMOS and LIGBT composite RC-LIGBT device of claim 2 wherein said N + electron emitter i (2) is of the same size and concentration as said N + electron emitter ii (5).
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CN101179097A (en) * 2007-11-30 2008-05-14 电子科技大学 SOI high-pressure component
CN102214679A (en) * 2011-05-26 2011-10-12 上海先进半导体制造股份有限公司 Self-isolation high-voltage half-bridge structure formed in silicon on insulation
CN106847891A (en) * 2017-02-23 2017-06-13 重庆邮电大学 It is a kind of to control to tie the RC IGBT devices of terminal integral body diode by MOSFET

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GB2418063A (en) * 2004-09-08 2006-03-15 Cambridge Semiconductor Ltd SOI power device

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Publication number Priority date Publication date Assignee Title
CN101179097A (en) * 2007-11-30 2008-05-14 电子科技大学 SOI high-pressure component
CN102214679A (en) * 2011-05-26 2011-10-12 上海先进半导体制造股份有限公司 Self-isolation high-voltage half-bridge structure formed in silicon on insulation
CN106847891A (en) * 2017-02-23 2017-06-13 重庆邮电大学 It is a kind of to control to tie the RC IGBT devices of terminal integral body diode by MOSFET

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