CN106847891A - It is a kind of to control to tie the RC IGBT devices of terminal integral body diode by MOSFET - Google Patents
It is a kind of to control to tie the RC IGBT devices of terminal integral body diode by MOSFET Download PDFInfo
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- CN106847891A CN106847891A CN201710099683.4A CN201710099683A CN106847891A CN 106847891 A CN106847891 A CN 106847891A CN 201710099683 A CN201710099683 A CN 201710099683A CN 106847891 A CN106847891 A CN 106847891A
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 239000000284 extract Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
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- 229910052760 oxygen Inorganic materials 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
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- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical group OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
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- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000205 computational method Methods 0.000 description 1
- 230000009514 concussion Effects 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
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- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
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- H01L29/66234—Bipolar junction transistors [BJT]
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Abstract
The present invention relates to RC IGBT, belong to field of semiconductor, including the cathode layer, N drift regions, N cushions and the collecting zone that set from top to bottom, collecting zone includes the N collector region and P collector region that are set with layer, some polygate electrodes are arranged at intervals with cathode layer, each gate electrode is by SiO2Gate oxide is surrounded；RC IGBT devices are from left to right active area, transition region and knot termination environment, and knot termination environment bottom is made up of N collector region completely.The present invention is integrated with body diode using termination environment is tied, and ties the field limiting ring P ring of terminal as the anode of diode, ties the N collector region of termination environment bottom as the negative electrode of diode, and its conducting state is received to be integrated in controlling for the MOSFET of transition region.RC IGBT devices proposed by the invention can thoroughly eliminate snapback phenomenons under forward conduction IGBT patterns, and forward conduction voltage drop reduces 19.4%, and this structure substantially increases the performance of RC IGBT.
Description
Technical field
The present invention relates to field of semiconductor, and in particular to a kind of to control knot terminal conglomerate two by MOSFET
The RC-IGBT devices of pole pipe.
Background technology
IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) is pressure-resistant etc. because of its
Level can be widely used in the fields such as high ferro, new energy development, household electrical appliance, intelligent grid from 600V span to 6500V.
But IGBT is an one way conducting device, two back-to-back diodes are equivalent to during reverse-conducting so as to turn on.
It is accomplished by one fly-wheel diode FWD of inverse parallel (Free Wheeling Diode) to make in IGBT typical case's inverter circuit applications
Protective effect.RC-IGBT (Reverse-Conducting Insulated Gate Bipolar Transistor, inverse conductivity type
Insulated gate bipolar transistor) the part colelctor electrode P-Collector of IGBT is replaced with N-Collector, colelctor electrode P-
It is as shown in Figure 1 that Collector and N-Collector are spaced its structure.So that two back-to-back diodes in original IGBT
P-body/N-drift, N-buffer/P-Collector become P-body/N-drift, N-buffer/N-Collector
One diode structure, realizes the integrated of IGBT internal body diodes.The integrated level for not only increasing chip can also be saved into
This, eliminates the temperature difference existed between igbt chip and diode chip for backlight unit, improves reliability.
But tradition RC-IGBT has in the presence of some shortcomings of itself：On the one hand due to the introducing of N-Collector, from MOS
The electronics of outflow flows first to the N-Collector of low potential barrier when colelctor electrode is flowed to, and in the PN junction (P- of bottom
Collector/N-buffer produce an electrical potential difference VPN as shown in Figure 2 on).Work as VPN<Only have electronics to participate in during 0.7V conductive,
RC-IGBT is operated under unipolarity conduction mode.As VPN >=0.7V, P-Collector injects hole, RC- to drift region
IGBT is operated under bipolarity conduction mode.Because the conversion of two kinds of conduction modes result in the prominent of Current Voltage on curve of output
Become, that is, occur in that negative resistance Snapback phenomenons.This phenomenon causes that RC-IGBT some devices when used in parallel can not enter completely
Enter the mode of operation of IGBT, then device burns some devices caused by the excessive temperature of electric current is too high, ultimately results in whole circuit system
System collapse.
On the other hand, traditional RC-IGBT element layouts are as shown in figure 3, because N-Collector is used as the negative electrode of FWD, its
Upper area be FWD areas, P-Collector as IGBT anode, its upper area be IGBT areas, traditional RC-IGBT's
IGBT and FWD is blended in same active area (Active region).No matter so tradition RC-IGBT is being operated in IGBT just
To conduction mode or FWD reverse conduction modes, all only active area conducting electric currents, and tie termination environment (Edge
Termination) area is very big as shown in Fig. 1 Fig. 3, an effect for bearing breakdown reverse voltage is but only served, without electric conduction
Stream flows through, and causes CURRENT DISTRIBUTION uneven and chip utilization rate is low.
The content of the invention
In view of this, knot terminal integral body diode is controlled by MOSFET it is an object of the invention to provide a kind of
RC-IGBT devices.
The purpose of the present invention is achieved through the following technical solutions, a kind of to control knot terminal conglomerate by MOSFET
The RC-IGBT devices of diode, including cathode layer, N- drift regions 6, N cushions 7 and the collecting zone for setting from top to bottom, it is described
Collecting zone includes the N collector region 8 and P collector region 9 that are set with layer, and some polygate electrodes are arranged at intervals with the cathode layer
2, active emitter 4 is formed between two neighboring polygate electrodes, each polygate electrodes is by SiO2Gate oxide 3 is surrounded；
A P-body area 5 is provided with below each active emitter, P-body areas 5 are located at the top of N- drift regions 6, P-body areas
The N+ active areas 1 being connected with active emitter are provided with 5；Insulated gate bipolar transistor is from left to right divided into active
Area, transition region and knot termination environment, the bottom of the knot termination environment are made up of N collector region 8 completely.
Further, some SiO are arranged at intervals with the cathode layer in the knot termination environment2Field oxide 15, it is two neighboring
SiO2Field oxide connects a field spacing ring P-ring14, and spacing ring P-ring in field is located in N- drift regions, field spacing ring P-
The anode of the body diode that ring is internally integrated with RC-IGBT is connected, the body diode that N collector region is internally integrated with RC-IGBT
Negative electrode connection.
Further, MOSFET is provided with the equal potential belt 10 of the transition region, the source electrode 11 of MOSFET and drain electrode 12 are located at
In the equal potential belt 10 of transition region, the grid 13 of MOSFET is located at SiO2In gate oxide 3；The source electrode 11 of MOSFET and knot termination environment
Metal be connected, drain electrode 12 is connected with the cathodic metal of active area, the cathodic metal phase of grid 13 and drain 12 and active area
Even, the raceway groove between source electrode and drain electrode is opened and controlled by MOSFET grids 13 with off state.
There is advantages below due to using above technical scheme, the present invention：
A kind of RC-IGBT devices by MOSFET control knot terminal integral body diodes proposed by the invention, just
To snapback phenomenons are completely eliminated under conducting IGBT patterns, and forward conduction voltage drop reduces 19.4%.In reverse-conducting
Under FWD patterns, body diode is integrated with by tying terminal, the diode has soft anti-recovery characteristics, and whole Reverse recovery
During no current and voltage fluctuation.In sum, this new construction RC-IGBT substantially increases the comprehensive of traditional RC-IGBT
Close performance.
Brief description of the drawings
In order that the object, technical solutions and advantages of the present invention are clearer, below in conjunction with accompanying drawing the present invention is made into
The detailed description of one step, wherein：
Fig. 1 is traditional RC-IGBT structural representations；
Fig. 2 is two kinds of conduction modes present in traditional RC-IGBT forward conductions process；Wherein colelctor electrode P-
Voltage difference V between Collector and cushion n-bufferPN<During 0.7V, traditional RC-IGBT is operated in unipolarity conduction mould
Formula, works as VPN>During 0.7V, traditional RC-IGBT is operated in bipolarity conduction mode；
Fig. 3 is the domain structure of traditional RC-IGBT；Wherein the part colelctor electrode P-Collector of tradition RC-IGBT is by N-
Collector is replaced, and P-Collector and N-Collector is spaced on colelctor electrode, P-Collector tops area
Domain is IGBT areas, and N-Collector upper areas are FWD areas, therefore IGBT is mixed with FWD, i.e., diode has been integrated in
Source region；
Fig. 4 is a kind of RC-IGBT devices by MOSFET control knot terminal integral body diodes proposed by the present invention；
Fig. 5 is the domain structure of new construction RC-IGBT；New construction RC-IGBT is by the P-Collector of traditional RC-IGBT
With N-Collector integrate after and separate, now N-Collector be distributed in knot terminal area, as the negative electrode of FWD,
Its upper area is FWD areas, and P-Collector is distributed in active area, and used as the anode of IGBT, its upper area is IGBT areas,
Realize FWD to be separated with IGBT active areas, i.e., diode is integrated in knot termination environment；
Fig. 6 is a kind of topological structure of the RC-IGBT devices that knot terminal integral body diode is controlled by MOSFET, i.e., should
For groove grid trench structures RC-IGBT；
Fig. 7 is a kind of topological structure of the RC-IGBT devices that knot terminal integral body diode is controlled by MOSFET, i.e., should
For Super-junction structures RC-IGBT；
Fig. 8 be at room temperature T=300K when, length is the new construction RC-IGBT and tradition RC-IGBT of 450um in forward direction
Conducting IGBT patterns compare figure with the Current Voltage emulation under reverse-conducting FWD patterns；Wherein IGBT mode are forward conduction
IGBT patterns, DIODE mode are reverse-conducting FWD patterns；
Fig. 9 is that new construction RC-IGBT, traditional RC-IGBT under forward conduction and reverse-conducting state, work as electric current respectively
Density reaches 150A/cm2When current distributing figure；Wherein A points represent CURRENT DISTRIBUTIONs of the tradition RC-IGBT in forward conduction, B
Point represents CURRENT DISTRIBUTIONs of the new construction RC-IGBT in forward conduction, and C points represent electricity of the tradition RC-IGBT in reverse-conducting
Flow distribution, D points represent CURRENT DISTRIBUTIONs of the new construction RC-IGBT in reverse-conducting；
Figure 10 is the reverse recovery current voltage wave of new construction RC-IGBT, traditional RC-IGBT and traditional PIN diode
Shape compares figure；Wherein vignette is the computational methods of the softness factor, and Snap-off is the unexpected termination of electric current；
Figure 11 be new construction RC-IGBT, traditional RC-IGBT and traditional PIN diode reversely restoring process in device
Internal current profiles versus scheme；Wherein Hole Injection represent new construction RC-IGBT and traditional RC-IGBT and are reversely taking out
During obtaining current, P-Collector represents traditional PI N to hole, Without Hole Injection is constantly injected in drift region
Diode in reversely restoring process, injects due in the absence of P-Collector without hole；
Wherein, 1 is N+ active areas, and 2 is groove gate polysilicon electrode, and 3 is groove grid silicon dioxide layer, and 4 is active emitter, 5
It is P-body areas, 6 is N- drift regions, and 7 is N cushions, and 8 is N collector region, and 9 is P collector region, and 10 is transition region equal potential belt, and 11 are
The source electrode (being connected with knot terminal metal) of MOS control pipes, 12 is the drain electrode (being connected with the cathodic metal of IGBT) of MOS control pipes,
13 is the grid (being connected with the cathodic metal of IGBT) of MOS control pipes, and 14 is knot terminal field limiting ring P-ring, and 15 is field oxidation
Layer, 16 is superjunction P posts.
Specific embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
A kind of RC-IGBT devices by MOSFET control knot terminal integral body diodes proposed by the present invention, its structure
As shown in figure 4, laying out pattern is as shown in Figure 5.
RC-IGBT devices, including cathode layer, N- drift regions 6, N cushions 7 and the collecting zone for setting from top to bottom, it is described
Collecting zone includes the N collector region 8 and P collector region 9 that are set with layer, and some polygate electrodes are arranged at intervals with the cathode layer
2, active emitter 4 is formed between two neighboring polygate electrodes, each polygate electrodes is by SiO2Gate oxide 3 is surrounded；
A P-body area 5 is provided with below each active emitter, P-body areas 5 are located at the top of N- drift regions 6, P-body areas
The N+ active areas 1 being connected with active emitter are provided with 5；RC-IGBT devices are from left to right divided into active area, transition region
With knot termination environment, the bottom of the knot termination environment is made up of N collector region 8 completely.
Some SiO are arranged at intervals with cathode layer in the knot termination environment2Field oxide 15, two neighboring SiO2Field oxygen
Change layer and connect a field spacing ring 14, field spacing ring is located in N- drift regions, the body two that field spacing ring is internally integrated with RC-IGBT
The anode connection of pole pipe, the negative electrode of the body diode that N collector region is internally integrated with RC-IGBT is connected.
MOSFET is provided with the equal potential belt 10 of the transition region, the source electrode 11 of MOSFET and drain electrode 12 are located at transition region
In equal potential belt 10, the grid 13 of MOSFET is located at SiO2In gate oxide 3；The source electrode 11 of MOSFET and the metal phase for tying termination environment
Even, drain electrode 12 is connected with the cathodic metal of active area, and grid 13 is connected with the cathodic metal of drain 12 and active area, source electrode and
Raceway groove between drain electrode is opened and controlled by MOSFET grids 13 with off state.
The present invention is on the basis of traditional RC-IGBT, first by the original P collector areas (P- for separating arrangement
Collector) 9 combine and be integrated in active area, form IGBT areas；By the original N collector areas (N- for separating arrangement
Collector) 8 combine and be integrated in knot terminal area, form diode FWD areas.Its effect has three：Firstth, positive guide
In logical mechanism, resistance per square on P collector areas (P-Collector) is integrated into a very big resistance by new construction RC-IGBT
RanodeSo that the resistance of its PNP (P-body/n-drift, n-buffer/P-Collector) transistor base emitter stage
RanodeIt is very big, emitter to base voltage VPNEasily reaching 0.7V makes transistor enter bipolarity conduction mode.Due to only existing
A kind of conductive mechanism, in the absence of traditional RC-IGBT from unipolarity to bipolarity conduction mode transition process, therefore can effectively disappear
Except Snapback phenomenons.Secondth, on laying out pattern, new construction RC-IGBT is by the P-Collector and N- of traditional RC-IGBT
Collector integrate after and separate.Now N-Collector as FWD negative electrode, its upper area be FWD areas, P-
Collector as IGBT anode, its upper area be IGBT areas, realize FWD and separated with IGBT active areas, carry significantly
The utilization rate of chip high.In 3rd structure, the anode of the body diode FWD that traditional RC-IGBT is internally integrated is to use P-
Body areas, negative electrode uses N-Collector, and the anode of the body diode FWD that new construction RC-IGBT is internally integrated is to adopt
Field limiting ring P-ring is used, negative electrode still uses N-Collector, therefore integrated diode structure is different, due to field
Limit ring P-ring is the structure for tying termination environment (Edge termination), therefore new construction RC-IGBT is successfully using tying termination set
Into body diode；Secondly, the reverse blocking performance in order to not influence whole device, new construction is in active area (Active
Region) MOSFET structure is introduced in transition region and knot termination environment (Edge termination) between, this
The source electrode 11 of MOSFET is connected with knot terminal metal, and drain electrode 12 is connected with the cathodic metal of IGBT active areas, the ditch between source and drain
Road is opened and controlled by metal-oxide-semiconductor grid 13 with off state, and metal-oxide-semiconductor grid 13 is golden with the negative electrode of drain electrode 12 and IGBT active areas
Symbolic animal of the birth year connects, therefore metal-oxide-semiconductor grid need not add extra, and its signal is synchronous with IGBT active area cathode signals.At RC-IGBT
When reverse-conducting, IGBT active area negative electrodes add positive voltage i.e. MOSFET grids plus positive voltage, and raceway groove is formed, and MOSFET is opened
Open, source and drain is connected, now the electric current on the negative electrode of IGBT active areas passes through again after MOSFET channel flows through knot terminal metal
The anode P-ring of FWD is downwardly towards N-Collector, and FWD is in the conduction state for this process.Together should IGBT active areas the moon
Signal on pole tension revocation MOSFET is disappeared, and raceway groove is closed source and drain and disconnected, the source electrode of MOSFET and knot terminal metal with
And the anode P-ring of FWD is connected, now the anode of FWD disconnects and is in blocking state.Therefore by introducing in transition region
MOSFET structure can directly control to tie the working condition of the integrated body diode FWD in termination environment, and MOSFET is only equivalent to one
Individual switch is as shown in Fig. 4 equivalent electrical diagrams.To sum up, new construction RC-IGBT devices of the invention are by tying terminal conglomerate
Diode FWD, and the mode of operation of FWD is controlled by MOSFET, the new structure for introducing is carried out on the basis of traditional RC-IGBT
Improve, but working mechanism there occurs great variety.It is positive that this new RC-IGBT not only can thoroughly eliminate traditional RC-IGBT
The existing Snpaback phenomenons of conducting, while using tying terminal area integral body diode so that chip area obtains abundant profit
With controlling body diode by MOSFET so that FWD in forward conduction can normal work, do not influence device in reverse blocking
The blocking of part is pressure-resistant, and the combination property of device is greatly improved.
Further illustrate, new construction of the invention can be with except can be used in planar gate RC-IGBT (such as Fig. 4)
Among the RC-IGBT (such as Fig. 6) and superjunction super junction RC-IGBT (such as Fig. 7) of groove grid trench structures.
Can be obtained by MEDICI simulation softwares, to the traditional RC-IGBT as shown in Figure 1 for being provided, as shown in Figure 4 is new
Structure RC-IGBT has carried out emulation and has compared, the 600V resistance to RC-IGBT that arbitrarily downgrades, traditional RC-IGBT of the manufacture of analogue simulation thin slice technique
Simulation parameter with new construction RC-IGBT is consistent, and wherein N- drift region thickness is 60um, and doping concentration is 7 × 1013cm-3, carry
The sub- life-span is flowed for 10us, and environment temperature is 300K, and length is 450um.
Fig. 8 be at room temperature T=300K when, length is the new construction RC-IGBT and tradition RC-IGBT of 450um in forward direction
Current Voltage analogous diagram under conducting IGBT patterns and reverse-conducting FWD patterns.From Fig. 8 simulation results, in forward conduction
State is Vg=15V, Vcathode=0V, VanodeDuring=(+V), there is snapback in traditional RC-IGBT when electric current is 5A or so
Phenomenon, the degree Δ V that snapback phenomenons occurSB=1.8V.For new construction RC-IGBT, whole forward conduction process without
Snapback phenomenons occur, and its principle analysis can as above therefore by integrating the length of P-Collector be eliminated well
Snapback phenomenons；In addition when forward conduction electric current reaches 150A/cm2, the forward conduction voltage drop of traditional RC-IGBT is 2.06V
As shown in A points in Fig. 8, the forward conduction voltage drop of corresponding new construction RC-IGBT is 1.66V as shown in B points in Fig. 8, relative biography
System RC-IGBT, new construction RC-IGBT conduction voltage drops reduce 19.4%.To sum up new construction RC-IGBT is not only eliminated
Snapback phenomenons, are also greatly reduced forward conduction voltage drop and reduce forward conduction loss.Equally can by Fig. 8 simulation results
Know, be V in reverse-conducting stateg=0V, Vcathode=(+V), VanodeDuring=0v, traditional RC-IGBT and new construction RC-IGBT
The reverse-conducting curve of diode FWD be consistent substantially, when reverse-conduction current reaches -150A/cm2, two kinds of RC-IGBT
Reverse-conducting pressure drop be respectively at D points and C points in Fig. 8, both do not have essential distinction, i.e., new construction RC-IGBT is to traditional RC-
The reverse-conducting performance impact of IGBT less, can be ignored.
Fig. 9 is new construction RC-IGBT, and traditional RC-IGBT under forward conduction and reverse-conducting state, works as electric current respectively
Density reaches 150A/cm2When current distributing figure, the A in figure, B, C, D point is corresponding with Fig. 8.From simulation result：It is positive
During conducting, the part P-Collector of traditional RC-IGBT is replaced by N-Collector, therefore no current distribution in the left side in figure,
Conducting electric current is mainly distributed on the top i.e. IGBT areas of P-Collector.New construction RC-IGBT is whole due to N-Collector
Close knot terminal area, P-Collector is distributed in whole active area, thus during forward conduction CURRENT DISTRIBUTION in whole IGBT areas,
Relatively conventional RC-IGBT, CURRENT DISTRIBUTION is more uniform.During reverse-conducting, the negative electrode of the diode FWD of traditional RC-IGBT is N-
Collector, anode is P-body, therefore reverse-conduction current is distributed in N-Collector tops and is distributed in active area.New knot
The negative electrode of the diode FWD of structure RC-IGBT is N-Collector, and anode is P-ring, because N-Collector is integrated into
Event reverse-conduction current in knot terminal area is distributed in knot termination environment.
Figure 10 is new construction RC-IGBT, the reverse recovery current voltage wave of traditional RC-IGBT and traditional PIN diode
Shape compares figure, can be seen that the softness factor of three kinds of devices is respectively 1.2,1.3,0.75 by current curve in figure, therefore this new
The softness factor of the RC-IGBT of structure is suitable with tradition RC-IGBT, and relatively conventional PIN diode softness factor lifting 37%.
Soft Reverse recovery is when the softness factor is more than 1.Traditional PIN diode is not only very hard Reverse recovery, but also is existed
The phenomenon such as Snap-off and current fluctuation, and for new construction RC-IGBT and traditional RC-IGBT then in the absence of Snap-off and
Current fluctuation phenomenon.Can be seen that, except the RC-IGBT of this new construction, other are all present by Reverse recovery voltage curve in figure
Situations such as voltage overshoot and fluctuation, for traditional PIN diode, this phenomenon reason is due to the Snap-off of electric current and high
What di/dt was caused, and for traditional RC-IGBT, the mechanism of the fluctuation of backward voltage is because in reversely restoring process, exhaust
Layer imbalance caused by, and basic reason be electric current in device skewness, in taking out for Reverse recovery carrier
The concussion of Current Voltage is result in during taking..
Figure 11 is new construction RC-IGBT, device in traditional RC-IGBT and the reversely restoring process of traditional PIN diode
Internal current profiles versus scheme, as seen from the figure new construction RC-IGBT and traditional RC-IGBT reversely extract electric current when, due to
P-Collector can be extracted this prevents carrier in drift region to hole is constantly injected in drift region by moment, it is ensured that
Reverse recovery current is slowly reduced, this also explains new construction RC-IGBT in Figure 11 and traditional RC-IGBT Reverse recoveries electricity
Stream does not exist Snap-off and current fluctuation phenomenon.And traditional PIN diode is due in the absence of P-Collector, reversely extensive
During multiple, the carrier in drift region extracts by moment, thus causes the mutation of Current Voltage, that is, there is electric current
The overshoot phenomenon of Snap-off phenomenons and voltage.
In sum, a kind of RC-IGBT by MOSFET control knot terminal integral body diodes proposed by the invention
Device, snapback phenomenons, and forward conduction voltage drop reduction are completely eliminated through simulating, verifying under forward conduction IGBT patterns
19.4%.Under reverse-conducting FWD patterns, body diode is integrated with by tying terminal.The diode has soft anti-recovery
The fluctuation of no current and voltage in characteristic, and whole reversely restoring process.In sum, this new construction RC-IGBT is carried significantly
The combination property of traditional RC-IGBT high.
A kind of RC-IGBT devices by MOSFET control knot terminal integral body diodes proposed by the present invention, to illustrate
As a example by Fig. 4, its concrete methods of realizing includes：Choose N-type<100>Crystal orientation zone melting single-crystal is padded, field oxidation, etches active area, long
Grid oxygen, deposit Poly grid (grid 13 of metal-oxide-semiconductor is synchronously completed), the injection of P body, the N+ active areas injection (source electrode of MOSFET
11 synchronously complete with drain electrode 12), BPSG is deposited, emitter metal is punched and deposits, emitter metal exposes and etches, back surface field
Stop layer injects, backside collector N-Collector (8) and colelctor electrode P-Collector (9) ion implanting and annealing respectively.
Back face metalization, passivation etc..
During implementation, according to the design requirement of specific device, one kind proposed by the present invention is by MOSFET controls
The RC-IGBT devices of terminal integral body diode are tied, its surface MOS areas and drift region are variable, can be used for groove grid
In the RC-IGBT (such as Fig. 6) and superjunction super junction RC-IGBT (such as Fig. 7) of trench structures.In specific making,
Backing material also can use the semi-conducting materials such as carborundum, GaAs, indium phosphide or germanium silicon to replace body except that can use silicon Si materials
Silicon.
Finally illustrate, preferred embodiment above is merely illustrative of the technical solution of the present invention and unrestricted, although logical
Cross above preferred embodiment to be described in detail the present invention, it is to be understood by those skilled in the art that can be
Various changes are made to it in form and in details, without departing from claims of the present invention limited range.
Claims (3)
- It is 1. a kind of to control to tie the RC-IGBT devices of terminal integral body diode by MOSFET, it is characterised in that：Including from up to The cathode layer of lower setting, N- drift regions (6), N cushions (7) and collecting zone, the collecting zone include the N collector region set with layer (8) some polygate electrodes (2), two neighboring polysilicon gate electricity and P collector region (9), are arranged at intervals with the cathode layer Interpolar forms active emitter (4), and each polygate electrodes is by SiO2Gate oxide (3) is surrounded；Each active emitter Lower section is provided with a P-body area (5), and P-body areas (5) are set positioned at the top of N- drift regions (6) in P-body areas (5) There are the N+ active areas (1) being connected with active emitter；Inverse conductivity type insulated gate bipolar transistor is from left to right divided into active Area, transition region and knot termination environment, the bottom of the knot termination environment are made up of N collector region (8) completely.
- 2. it is according to claim 1 it is a kind of by MOSFET control knot terminal integral body diode RC-IGBT devices, its It is characterised by：Some SiO are arranged at intervals with cathode layer in the knot termination environment2Field oxide (15), two neighboring SiO2 Oxide layer connects field spacing ring P-ring (14), and spacing ring P-ring in field is located in N- drift regions, field spacing ring P-ring The anode of the body diode being internally integrated with RC-IGBT is connected, the body two that inverse conductivity type insulated gate bipolar transistor is internally integrated The negative electrode of pole pipe is connected with N collector region.
- 3. it is according to claim 2 it is a kind of by MOSFET control knot terminal integral body diode RC-IGBT devices, its It is characterised by：MOSFET is provided with the equal potential belt (10) of the transition region, the source electrode (11) of MOSFET and drain electrode (12) are located at In the equal potential belt (10) of transition region, the grid (13) of MOSFET pipes is positioned at SiO2In gate oxide (3)；The source electrode (11) of MOSFET Metal with knot termination environment is connected, and drain electrode (12) is connected with the cathodic metal of active area, and grid (13) (12) and has with draining The cathodic metal of source region is connected, and the raceway groove between source electrode and drain electrode is opened and controlled by MOSFET grids (13) with off state.
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| CN109256422A (en) * | 2017-07-12 | 2019-01-22 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor devices and its manufacturing method and electronic device |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489908A (en) * | 2013-09-16 | 2014-01-01 | 电子科技大学 | RC-IGBT capable of eliminating negative resistance effect |
| CN204155935U (en) * | 2013-03-26 | 2015-02-11 | 英飞凌科技奥地利有限公司 | Semiconductor device |
| CN104779279A (en) * | 2015-04-10 | 2015-07-15 | 电子科技大学 | RC-IGBT (reverse-conducting insulated gate bipolar translator) capable of inhibiting snapback effect |
| US20160027866A1 (en) * | 2014-07-22 | 2016-01-28 | Fuji Electric Co., Ltd. | Semiconductor device |
-
2017
- 2017-02-23 CN CN201710099683.4A patent/CN106847891B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204155935U (en) * | 2013-03-26 | 2015-02-11 | 英飞凌科技奥地利有限公司 | Semiconductor device |
| CN103489908A (en) * | 2013-09-16 | 2014-01-01 | 电子科技大学 | RC-IGBT capable of eliminating negative resistance effect |
| US20160027866A1 (en) * | 2014-07-22 | 2016-01-28 | Fuji Electric Co., Ltd. | Semiconductor device |
| CN104779279A (en) * | 2015-04-10 | 2015-07-15 | 电子科技大学 | RC-IGBT (reverse-conducting insulated gate bipolar translator) capable of inhibiting snapback effect |
Cited By (21)
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| CN109256422B (en) * | 2017-07-12 | 2022-04-29 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device, manufacturing method thereof and electronic device |
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| CN111834449A (en) * | 2020-07-27 | 2020-10-27 | 重庆邮电大学 | Quick turn-off RC-IGBT device with back double-MOS structure |
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Effective date of registration: 20220126 Address after: 518000 18J, building 6, weipeng garden, Futian District, Shenzhen, Guangdong Patentee after: Yang Lihua Address before: 400065 Chongqing Nan'an District huangjuezhen pass Chongwen Road No. 2 Patentee before: CHONGQING University OF POSTS AND TELECOMMUNICATIONS |