CN106233479A - 发光装置 - Google Patents

发光装置 Download PDF

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CN106233479A
CN106233479A CN201580021604.7A CN201580021604A CN106233479A CN 106233479 A CN106233479 A CN 106233479A CN 201580021604 A CN201580021604 A CN 201580021604A CN 106233479 A CN106233479 A CN 106233479A
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electrode pad
lateral electrode
light
type
width
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CN106233479B (zh
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梅津典雄
松村孝
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Dexerials Corp
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Dexerials Corp
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  • Led Device Packages (AREA)
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Abstract

在应使用各向异性导电粘接膏30将发光元件10无凸块地倒装片安装在形成于基板20上的n型侧、n型侧电极垫21、22的发光装置100中，设为能够同时解决抑制短路与提高散热效率这两个课题。在使用各向异性导电粘接膏30将发光元件10无凸块地倒装片安装在形成于基板20上的n型侧、p型侧电极垫21、22的发光装置100中，使n型侧、p型侧电极垫21、22的宽度与发光元件10的宽度同等或比它窄。

Description

发光装置
技术领域
本发明涉及利用各向异性导电粘接膏将发光二极管（LED）芯片等发光元件倒装片安装在基板而成的发光装置。
背景技术
在将发光二极管（LED）芯片等发光元件安装在基板时，与Au引线接合工艺方法相比，广泛应用能期待提高光提取效率或散热特性的倒装片工艺方法（专利文献1）。然而，LED芯片等发光元件，通常向大口径的半导体晶圆组装许多个发光元件后在切割（dicing）步骤中被切断，制成作为发光元件的半导体芯片，若含有导电粒子的各向异性导电粘接剂附着到半导体芯片的侧面，则由于聚集有许多个导电粒子的块，会存在半导体层与电极电连接，产生短路不良这一问题。
因此，通过在发光元件或基板预先形成凸块（bump）而进行倒装片安装，从而防止产生短路。具体而言，如图3A（发光装置的俯视图）、图3B（从图3A的A方向观看的发光装置的侧视图）所示，将发光装置110的芯片主体131背面的n型侧元件电极111与p型侧元件电极112分别经由各向异性导电粘接膏130热压接在形成有金凸块Bp的基板120的表面的n型侧电极垫121与p型侧电极垫122，从而进行倒装片安装。在该情况下，为了确保导通可靠性，一般而言，n型侧电极垫121的宽度L1与p型侧电极垫122的宽度L2构成为大于芯片主体131的宽度L0，并且将凸出部分的宽度Lla、L2a、L1b、L2b设为30μm以上50μm以下程度。
现有技术文献
专利文献
专利文献1：日本特开2007－123613号公报。
发明内容
发明要解决的课题
然而，在如图3A那样使用凸块而构成的发光装置的情况下，虽然能够抑制短路，但金凸块形成成本非常高，此外，由于发出光和热的发光元件的发光层与基板的距离远，因此存在散热特性下降（换句话说，热阻增大）的问题。因此，还考虑将发光装置设为无凸块（bumpless）构造，不过，虽然具有无需金凸块形成成本这一优点和散热特性提高这一优点，但如先前那样担心产生短路。如此，现状是寻求同时解决抑制短路和提高散热特性这两个课题的无凸块构造的发光装置。
本发明的目的在于想要解决现有技术的问题点，在应使用各向异性导电粘接膏将发光元件无凸块地倒装片安装在形成于基板上的电极垫的发光装置中，能同时解决抑制短路和提高散热特性这两个课题。
用于解决课题的方案
本发明人们发现在使用各向异性导电粘接膏将发光元件无凸块地倒装片安装在形成于基板上的电极垫的发光装置中，通过使基板上的电极垫的宽度与发光元件的宽度同等或比它窄，从而将从基板上的电极垫与发光元件之间溢出的各向异性导电粘接膏保持在比电极垫与发光元件的间隙宽的发光元件与基板表面的间隙，因此能够防止将P层与N层之间短路，并且由于无凸块地进行倒装片安装，因此能够压缩制造成本，且能够提高散热特性（降低热阻），完成了本发明。
即，本发明为使用各向异性导电粘接膏将具有半导体的芯片主体的发光元件无凸块地倒装片安装在形成于基板上的电极垫的发光装置，是以电极垫的宽度与所述芯片主体的宽度同等或比它窄为特征的发光装置。
此外，本发明为发光装置，是所述芯片主体为发光二极管芯片的发光装置。
此外，本发明为发光装置，是将所述芯片主体的宽度设为100的情况下，所述电极垫的宽度为80%以上100%以下的发光装置。
此外，本发明为发光装置，是所述电极垫的宽度方向的边缘与所述芯片主体的宽度方向的边缘的间隔为10μm以上40μm以下的发光装置。
此外，本发明为发光装置，是在发光元件与搭载装置之间配置有含有导电粒子的各向异性导电粘接膏，所述发光元件通过所述各向异性导电粘接膏设于所述搭载装置的发光装置，所述搭载装置具有：基板、及配置在所述基板上的n型侧电极垫与p型侧电极垫；所述发光元件具有：平面形状为四边形形状的芯片主体、及设置在所述芯片主体的p型侧元件电极与n型侧元件电极；在所述芯片主体的内部，设置有p型区域与n型区域，形成有pn结，所述p型侧元件电极经由所述导电粒子而电连接在所述p型区域，所述n型侧元件电极经由所述导电粒子而电连接在所述n型区域，所述p型侧电极垫的表面与所述n型侧电极垫的表面位于所述基板表面的上方，所述p型侧电极垫与所述n型侧电极垫形成为宽度为固定值的带状，所述p型侧电极垫的前端与所述n型侧电极垫的前端位于所述芯片主体的正下方即正下方区域内，与所述p型侧电极垫的前端相反侧的部分、及与所述n型侧电极垫的前端相反侧的部分位于所述正下方区域的外侧，所述p型侧电极垫的所述宽度设为所述芯片主体的、位于所述p型侧电极垫的正上方的第一边的长度以下的长度，所述n型侧电极垫的所述宽度设为所述芯片主体的、位于所述n型侧电极垫的正上方的第二边的长度以下的长度。
此外，本发明为发光装置，该发光装置中，所述p型侧电极垫的所述宽度设为比所述芯片主体的、位于所述p型侧电极垫的正上方的第一边的长度短，所述n型侧电极垫的所述宽度设为比所述芯片主体的、位于所述n型侧电极垫的正上方的第二边的长度短，在所述正下方区域内的所述p型侧电极垫与所述n型侧电极垫的外侧的所述发光元件与所述基板之间，配置有从所述发光元件与所述p型侧电极垫之间溢出的所述各向异性导电粘接膏、及从所述发光元件与所述n型侧电极垫之间溢出的所述各向异性导电粘接膏。
此外，本发明为发光装置，该发光装置中，所述第一边与所述第二边以相同长度平行地配置，所述第一边的两端位于所述p型侧电极垫的正上方的外侧，所述第二边的两端位于所述n型侧电极垫的正上方的外侧。
发明效果
依据使用各向异性导电粘接膏将发光元件无凸块地倒装片安装在形成于基板上的电极垫的本发明的发光装置，电极垫的宽度构成为与发光元件的宽度同等或比它窄。因此，抑制发生短路，并且能够同时实现散热特性的提高（热阻的降低）。
此外，各向异性导电粘接膏由于不附着在发光元件的侧面，因此不会妨碍从发光元件的侧面放射的光的发射。
附图说明
【图1A】本发明的发光装置的俯视图
【图1B】从图1A的A方向观看的本发明的发光装置的侧视图
【图2A】用于说明在搭载基板上的各向异性导电粘接膏配置发光元件的状态的局部放大剖视图
【图2B】用于说明按压发光元件时的状态的局部放大剖视图
【图2C】用于说明p型侧、n型侧元件电极与p型侧、n型侧基板电极通过导电粒子而电连接的状态的局部放大剖视图
【图2D】用于说明现有技术的发光装置的元件主体的侧面所附着的各向异性导电粘接膏的放大图
【图3A】现有的发光装置的俯视图
【图3B】从图3A的A方向观看的现有的发光装置的侧视图。
具体实施方式
以下，一面参照附图，一面对本发明的发光装置详细地进行说明。
图1A是本发明的发光装置100的俯视图，图1B是从图1A的A方向观看的本发明的发光装置100的侧视图。本发明的发光装置100为将发光元件10无凸块地倒装片安装在基板20上的发光装置。详细而言，发光元件10具有芯片主体31、n型侧元件电极11及p型侧元件电极12，n型侧元件电极11与p型侧元件电极12配置在芯片主体31上。
在基板20上，配置有n型侧电极垫21与p型侧电极垫22，由基板20、n型侧电极垫21及p型侧电极垫22形成搭载装置18。n型侧元件电极11与p型侧元件电极12分别经由固化后的各向异性导电粘接膏30而各向异性导电连接在搭载装置18的n型侧电极垫21与p型侧电极垫22。
对其发光装置100的制造工序进行说明。
各向异性导电粘接膏30中含有导电粒子36，若将未固化的各向异性导电粘接膏称为原液，则在搭载装置18的表面中位于固定在搭载装置18的发光元件10的正后方的n型侧电极垫21上与p型侧电极垫22上配置原液后，使发光元件10的形成有n型侧元件电极11与p型侧元件电极12的面与配置在基板20上的原液相对，使发光元件10的n型侧元件电极11接触n型侧电极垫21上的原液，使p型侧元件电极12接触p型侧电极垫22上的原液。
图2A表示其状态，标号28表示原液，在原液28的粘接成分29中分散有导电粒子36。基板20承载在台51上。
此处，在原液28上承载发光元件10时，若设为芯片主体31的底面与基板20的表面平行，则图2A中的标号H1表示从基板20的表面39至芯片主体31的底面38的距离即芯片主体31的底面38的高度。标号Wa、Wb为n型侧电极垫21与p型侧电极垫22在与基板20平行的方向上距芯片主体31的边缘的距离。
n型侧元件电极11与p型侧元件电极12的厚度相等，此外，n型侧电极垫21与p型侧电极垫22的厚度也相等，该芯片主体31的底面38的高度H1为将n型侧电极垫21与p型侧电极垫22的厚度P1、由n型侧或p型侧电极垫21、22与n型或p型侧元件电极11、12夹持的原液28的厚度Q1、及n型侧元件电极11与p型侧元件电极12的厚度E1进行合计的值。
n型侧元件电极11与p型侧元件电极12为对形成在芯片主体31的表面的导电性薄膜进行蚀刻而形成，若将n型侧元件电极11与p型侧元件电极12的厚度E1设为比n型侧电极垫21与p型侧电极垫22的厚度P1薄，在高度方向的距离计算上能够忽略的厚度，则从搭载装置18的表面39至n型侧元件电极11或p型侧元件电极12的表面的距离（H1－E1）为与从基板20的表面39至芯片主体31的底面38的高度H1相同的值。
再者，也可在发光元件10的n型侧元件电极11上与p型侧元件电极12上配置原液28，使n型侧电极垫21接触n型侧元件电极11上的原液28，使p型侧电极垫22接触p型侧元件电极12上的原液28。
接着，将发光元件10与基板20相互按压。此处，如图2B所示，通过按压构件52将发光元件10向基板20按压，此时，一面将原液28从n型侧元件电极11与n型侧电极垫21之间、及p型侧元件电极12与p型侧电极垫22之间挤出，一面使n型侧元件电极11与p型侧元件电极12分别接近n型侧电极垫21与p型侧电极垫22。此时的高度H2变得比承载发光元件10时的高度H1低，n型侧电极垫21与p型侧电极垫22上的原液28的厚度Q2也比原本的厚度Q1减少。
而且，如图2C所示，n型侧元件电极11经由导电粒子36与n型侧电极垫21接触，p型侧元件电极12经由导电粒子36与p型侧电极垫22接触。
此时，由于导电粒子36的大小小至可忽略的程度，因此使n型侧或p型侧元件电极11、12与n型侧或p型侧电极垫21、22经由导电粒子36连接的情况与直接接触的情况相同，可认为原液28的厚度Q3为零。若忽略n型侧或p型侧元件电极11、12的厚度E1，则发光元件10与基板20之间的距离即高度H3成为n型侧电极垫21与p型侧电极垫22的厚度P1。
原液28的粘接成分29含有热固化成分，若在n型侧元件电极11与p型侧元件电极12经由导电粒子36接触于n型侧电极垫21与p型侧电极垫22的状态下，对发光元件10与基板20进行加热，使原液28升温，则形成固化的各向异性导电粘接膏30，发光元件10与基板20相互固定，获得通过导电粒子36将n型侧或p型侧元件电极11、12与n型侧或p型侧电极垫21、22分别电连接的发光装置100。
芯片主体31为在内部设置有N型半导体区域与P型半导体区域的半导体晶圆通过切断而被分割为多个的半导体芯片，在各芯片主体31的内部，分别设置有N型半导体区域、及与N型半导体区域接触的P型半导体区域，分别形成有pn结。
各芯片主体31上的n型侧元件电极11电连接在N型半导体区域，P型侧元件电极12电连接在P型半导体区域，通过各向异性导电粘接膏30的固化，n型侧元件电极11经由导电粒子36电连接在n型侧电极垫21，p型侧元件电极12经由导电粒子36电连接在p型侧电极垫22，因此，若在p型侧电极垫22与n型侧电极垫21之间施加电压，则电压经由p型侧元件电极12与n型侧元件电极11而施加到P型半导体区域与N型半导体区域之间，若pn结正向偏置而使电流流过pn结，则pn结附近发光。
基板20例如为板状的树脂，n型侧电极垫21与p型侧电极垫22为配置在基板20的表面上的金属膜等导电性膜，n型侧电极垫21的表面与p型侧电极垫22的表面位于比基板20的表面高出n型侧电极垫21与p型侧电极垫22的膜厚P1的位置。
在忽略导电粒子36的大小的情况下，变成为n型侧元件电极11与n型侧电极垫21接触，p型侧元件电极12与p型侧电极垫22接触，但由于n型侧电极垫21与p型侧电极垫22的膜厚P1并不是零，因此变成为基板20的表面39与芯片主体31的底面38离开高度H3而形成间隙13，此外，在基板20的表面39与n型侧元件电极11的表面或p型侧元件电极12的表面之间也形成有间隙。即，发光元件10的表面与基板20的表面39离开，形成有间隙。
如上所述，n型侧元件电极11与p型侧元件电极12为配置在芯片主体31的表面上的导电性薄膜、例如金属薄膜的情况下，其膜厚E1的值小于n型侧电极垫21与p型侧电极垫22的膜厚P1的值，和芯片主体31的底面38与n型侧电极垫21或p型侧电极垫22之间的距离相比，n型侧元件电极11的表面或p型侧元件电极12的表面与基板20的表面39之间的距离一方更大（图2C）。
相对于此，如图2D所示，在现有技术的发光装置中，n型侧电极垫121与p型侧电极垫122和发光元件110的外周相比在外侧凸出，搭载装置180的表面139至芯片主体131的底面138的高度H4比本发明的高度H3小n型侧电极垫121与p型侧电极垫122的膜厚P1的量。
而且，由于高度H4较低，因此原液128从发光元件110与n型侧或p型侧电极垫121、122之间朝向比发光元件110的外周更外侧而被挤出。
由于原液128的粘性高，因此被挤出的原液128中从后面被挤出的原液128堆到先前被挤出的原液128上，若被挤出的原液128***得比发光元件110的芯片主体131的底面138更高，附着在芯片主体131的侧面，则使粘接成分129固化后的导电粒子136的块成为短路的原因。
在本申请发明中，高度H3高于现有技术的发光装置的高度H4，从n型侧元件电极11与n型侧电极垫21之间、及p型侧元件电极12与p型侧电极垫22之间挤出的原液28被收容在间隙13，不会***至发光元件10的侧面。
芯片主体31的平面形状为四边呈直角交叉的四边形，若将四边中相对的两个边设为一组，则一组的两个边的长度相等。
此外，一组的两个边中，n型侧电极垫21位于一边的正下方，p型侧电极垫22位于另一边的正下方，因而，n型侧电极垫21与p型侧电极垫22从一组的两个边的正下方的位置进入位于芯片主体31的正下方的正下方区域，在正下方区域内呈直线状延伸。
p型侧电极垫22与n型侧电极垫21不位于另一组的两边之下。
此处，将与n型侧电极垫21延伸的方向呈直角的方向的长度设为n型侧电极垫21的宽度L1，将与p型侧电极垫22延伸的方向呈直角的方向的长度设为p型侧电极垫22的宽度L2，将芯片主体31的、位于n型侧电极垫21的正上方或p型侧电极垫22的正上方的边的长度设为发光元件宽度L0。
在本发明的发光装置100中，将n型侧电极垫21的宽度L1与p型侧电极垫22的宽度L2构成为与芯片主体31的宽度L0同等或比它短。从而，从基板20上的n型侧、p型侧电极垫21、22与发光元件10之间溢出的各向异性导电粘接膏30被保持在比n型侧、p型侧电极垫21、22与发光元件10的间隙更宽的发光元件10与基板20的表面的间隙13，因此，能够防止使P层与N层之间短路，并且由于无凸块地进行倒装片安装，因此能够压缩制造成本，且能够提高散热效率（换句话说，降低热阻）。
其次，上述A方向为n型侧电极垫21与p型侧电极垫22中的任一个从芯片主体31的边的正下方的位置朝向内侧延伸的方向。
此处，图1A及图3A中的n型侧、p型侧电极垫21、22的宽度方向为横穿A方向的方向。换句话说，n型侧、p型侧电极垫21、22的宽度方向为在平行于基板20的表面的平面内与A方向呈直角的方向。
因而，所谓的图1A及图3A中的A方向，能定义为横穿n型侧电极垫21与p型侧电极垫22之间的间隙的方向。再者，在图1A及图3A中，在基板20上，分别将矩形的p型侧电极垫22和n型侧电极垫21设置既定的间隔而形成在邻接的位置，因此，n型侧、p型侧电极垫21、22的宽度方向成为与A方向大致正交的方向，但在n型侧、p型侧电极垫21、22的形状并非矩形而为平行四边形、梯形、三角形等形状的情况下，n型侧、p型侧电极垫21、22的宽度方向未必为与A方向大致正交的方向，也可为相对于A方向具有倾斜的角度而横穿的方向。
此外，作为将n型侧电极垫21与p型侧电极垫22的宽度L1、L2构成为比芯片主体31的宽度L0短的程度，由于若过短则有散热特性下降的倾向，因此在将芯片主体31的宽度L0的长度设为100的情况下，将n型侧电极垫21的宽度L1与p型侧电极垫22的宽度L2的长度优选设为80以上100以下，更优选设为90以上99以下。
在该情况下，发光元件10的芯片主体31在n型侧电极垫21与p型侧电极垫22的宽度方向一侧或两侧悬伸（overhang），但悬伸量（图1A的L1a、L1b、L2a、L2b）、即n型侧、p型侧电极垫21、22的宽度方向的边缘与芯片主体31的宽度方向的边缘的间隔若过小，则有发光元件10侧面的导电粘接膏30的爬升量增加的倾向，因此，优选为0以上120μm以下，更优选为5μm以上80μm以下，特别优选为10μm以上40μm以下。
再者，n型侧电极垫21的宽度L1与p型侧电极垫22的宽度L2通常为相同长度，但也可为不同长度。此外，悬伸量（L1a、L1b、L2a、L2b）也可为互相相同的长度，也可分别互相不同。通常，就提高制造时的对位等操作的精度、还有缓和操作的难易度的方面而言，优选将这些悬伸量设为互相相同的量。
n型侧电极垫21的宽度L1与p型侧电极垫22的宽度L2如上所述设为位于n型侧电极垫21的正上方的芯片主体31的边的长度以下的长度，此外，设为位于p型侧电极垫22的正上方的芯片主体31的边的长度以下的长度。
n型侧电极垫21与p型侧电极垫22的前端为在位于芯片主体31的正下方的正下方区域内互相离开地配置。
此处，如上所述，最好n型侧电极垫21的宽度L1与p型侧电极垫22的宽度L2设为比位于n型侧电极垫21的正上方的芯片主体31的边的长度短，此外，比位于p型侧电极垫22的正上方的芯片主体31的边的长度短，进而，最好位于n型侧电极垫21的宽度L1的正上方的芯片主体31的边在宽度L1的两侧凸出，此外，位于p型侧电极垫22的宽度L2的正上方的芯片主体31的边在宽度L2的两侧凸出。
在该情况下，在n型侧电极垫21与p型侧电极垫22的位于芯片主体31的正下方区域内的前端部分的外侧，除位于芯片主体31的边的正下方的部分以外，配置有形成在发光元件10与基板20之间的间隙，基板20与发光元件10之间的距离比发光元件10与n型侧电极垫21或p型侧电极垫22之间的距离长n型侧电极垫21或p型侧电极垫22的膜厚P1的量。
因而，在按压发光元件10而使n型侧元件电极11经由导电粒子36与n型侧电极垫21接触，使p型侧元件电极12经由导电粒子36与p型侧电极垫22接触时，若位于发光元件10与n型侧电极垫21之间的原液28、及位于发光元件10与p型侧电极垫22之间的原液28从发光元件10与n型侧或p型侧电极垫21、22之间被挤出，则被挤出的量被收容在发光元件10与基板20之间的间隙13，消除原液28在发光元件10的周围***的情况。
在本发明的发光装置100中，将n型侧、p型侧电极垫21、22的宽度构成为与芯片主体31的宽度同等或比它窄，除此以外，能设为与现有的发光装置的构成要素（例如发光元件的种类/大小、其连接垫的种类/大小、基板的种类/大小、其上的布线图案的原材料/厚度、各向异性导电粘接膏的种类/粘度、所含有的导电粒子36的种类或平均粒径等）相同的构成。
再者，作为本发明的发光装置100的构成要素之一的发光元件10，能举出LED芯片、有机EL芯片、无机EL芯片元件等，尤其能优选举出LED芯片。这些当然为无凸块。
实施例
以下，通过更具体的实施例对本发明进行说明。
实施例1～7
作为将LED芯片无凸块且以电极垫的宽度成为与发光元件的宽度同等或比它窄的方式倒装片安装在基板的示例，使用以下的基板、LED芯片、各向异性导电粘接膏制成图1A～1B所示的构造的发光装置。具体而言，从分配器（dispenser）向与LED元件的中央部对应的基板上供给既定量的各向异性导电粘接膏，将LED芯片载放于其各向异性导电粘接膏，在温度230℃、压力3N/chip、30秒这一条件下进行热压接，从而制成发光装置。
再者，将LED元件的宽度方向的边缘至电极垫的宽度方向的边缘为止的宽度（关于实施例的形态换句话说，为LED元件相对于电极垫的悬伸的量（L1a＝L1b＝L2a＝L2b））示于表1。在表1中记载为ΔLD。在实施例1～7中，ΔLD的数值为0或正数。
＜基板＞
基底材质：氧化铝0.6mm厚
电极垫：铜10μm厚
电极垫表面处理： Ni镀层3μm厚/Au0.3μm厚。
＜LED芯片＞
制品名：DA3547，Cree公司制造（美国Cree.Inc.）
尺寸：350μm×470μm×155μmt。
＜各向异性导电粘接膏＞
制品名：SLP－04，Dexerials（股）制造。
比较例1～2
作为将LED芯片以在电极垫形成凸块且电极垫的宽度比发光元件的宽度宽的方式倒装片安装在基板的比较例，将图3A～图3B所示的构造的发光装置，除使用以下的基板以外，使用与实施例1的情形同样的LED芯片、各向异性导电粘接膏，反覆进行与实施例1同样的操作，从而制成了发光装置。
＜比较例1中所使用的基材＞
基底材质：氧化铝0.6mm厚
电极垫：铜10μm厚
Au凸块：直径80μm、高度15μm
Au凸块数：各电极垫3个
Au凸块间距：500μm。
＜比较例2中所使用的基材＞
基底材质：氧化铝0.6mm厚
电极垫：铜10μm厚
Au凸块：直径80μm、高度15μm
Au凸块数：各电极垫6个
Au凸块间距：200μm。
再者，将LED元件的宽度方向的边缘至电极垫的宽度方向的边缘为止的宽度（换句话说，电极垫从LED元件的宽度方向凸出的量（L1a＝L1b＝L2a＝L2b））示于表1。在表1中记载为ΔLD。比较例1及2以及以下的比较例3中，ΔLD的数值必然为负数。
比较例3
作为基板，使用未形成Au凸块、与实施例1同样地施加有电极垫表面处理的基板，除此以外，与比较例1同样地制成发光装置。
（评价）
对于实施例以及比较例中制成的发光元件，如以下说明那样对“短路不良”与“散热特性”进行试验评价。将所获得的结果示于表1。
＜短路不良＞
将各实施例及各比较例的发光元件分别制成100个，使用测试器（曲线描绘器TCT－2004，国洋电机工业（股））确认P极侧与N极侧之间是否产生短路，求出产生了短路的发光元件的比率（短路产生率）。短路产生率优选为1%以下，更优选为0.5%以下，特别优选为0%。
＜散热特性＞
为了对散热特性进行评价，依照“JE－DEC标准，JESD51－14”测定各发光元件的热阻值，求出将比较例1的热阻值作为对照时的实施例或比较例的发光元件的热阻值的减少率（热阻减少率）。减少率优选为25%以上，更优选为30%以上，特别优选为35%以上。
表1 实验结果
由表1可知，在通过使用各向异性导电粘接膏将LED芯片无凸块地倒装片安装在形成于基板上的电极垫而制成发光装置的情况下，可以知晓若使电极垫的宽度与发光元件的宽度同等或比它窄，则短路产生率为1%以下且热阻减少率为20%以上。特别是若将发光元件相对于基板的电极垫的悬伸量设为10μm以上40μm以下，则短路产生率为0%且热阻减少率成为35%以上，较为理想。
另一方面，可知在使用设置有凸块的基板的比较例1、2的发光装置的情况下，虽然短路不良得到改善，但散热特性未改善。可知在比较例3的发光装置的情况下，虽然散热特性得到改善，但短路不良会超过1%。
产业上的可利用性
使用各向异性导电粘接膏将发光元件无凸块地倒装片安装在形成于基板上的电极垫的本发明的发光装置，将电极垫的宽度构成为与发光元件的宽度同等或比它窄。因此，作为抑制短路的产生、并且提高散热特性（降低热阻）的发光装置是有用的。
标号说明
100 发光装置；10 发光元件；11 n型侧元件电极；12 p型侧元件电极；20 基板；21 n型侧电极塾；22 p型侧电极垫；30 各向异性导电粘接膏；31 芯片主体；Bp 金凸块；L0 发光元件的宽度；L1 n型侧电极垫的宽度；L2 p型侧电极垫的宽度。

Claims (7)

1.一种发光装置，使用各向异性导电粘接膏将具有半导体的芯片主体的发光元件无凸块地倒装片安装在形成于基板上的电极垫，其特征在于：
电极垫的宽度与所述芯片主体的宽度同等或比它窄。
2.如权利要求1所述的发光装置，其中，所述芯片主体为发光二极管芯片。
3.如权利要求1或2所述的发光装置，其中，在将所述芯片主体的宽度设为100的情况下，所述电极垫的宽度为80%以上100%以下。
4.如权利要求1或2所述的发光装置，其中，所述电极垫的宽度方向的边缘与所述芯片主体的宽度方向的边缘的间隔为10μm以上40μm以下。
5.一种发光装置，在发光元件与搭载装置之间配置有含有导电粒子的各向异性导电粘接膏，所述发光元件通过所述各向异性导电粘接膏设于所述搭载装置，其中，
所述搭载装置具有：
基板；及
配置在所述基板上的n型侧电极垫与p型侧电极垫，
所述发光元件具有：平面形状为四边形形状的芯片主体；及
设置在所述芯片主体的p型侧元件电极与n型侧元件电极，
在所述芯片主体的内部，设置有p型区域与n型区域，形成有pn结，
所述p型侧元件电极经由所述导电粒子而电连接在所述P型区域，所述n型侧元件电极经由所述导电粒子而电连接在所述n型区域，
所述p型侧电极垫的表面与所述n型侧电极垫的表面位于所述基板的表面的上方，
所述p型侧电极垫与所述n型侧电极垫形成为宽度为固定值的带状，
所述p型侧电极垫的前端与所述n型侧电极垫的前端位于所述芯片主体的正下方即正下方区域内，与所述p型侧电极垫的前端相反侧的部分、及与所述n型侧电极垫的前端相反侧的部分位于所述正下方区域的外侧，
所述p型侧电极垫的所述宽度设为所述芯片主体的、位于所述p型侧电极垫的正上方的第一边的长度以下的长度，
所述n型侧电极垫的所述宽度设为所述芯片主体的、位于所述n型侧电极垫的正上方的第二边的长度以下的长度。
6.如权利要求5所述的发光装置，其中，
所述p型侧电极垫的所述宽度设为比所述芯片主体的、位于所述p型侧电极垫的正上方的第一边的长度短，
所述n型侧电极垫的所述宽度设为比所述芯片主体的、位于所述n型侧电极垫的正上方的第二边的长度短，
在所述正下方区域内的所述p型侧电极垫与所述n型侧电极垫的外侧的所述发光元件与所述基板之间，配置有从所述发光元件与所述p型侧电极垫之间溢出的所述各向异性导电粘接膏、及从所述发光元件与所述n型侧电极垫之间溢出的所述各向异性导电粘接膏。
7.如权利要求6所述的发光装置，其中，
所述第一边与所述第二边以相同长度平行地配置，所述第一边的两端位于所述p型侧电极垫的正上方的外侧，
所述第二边的两端位于所述n型侧电极垫的正上方的外侧。
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CN107170880A (zh) * 2017-07-14 2017-09-15 上海天马微电子有限公司 发光单元及显示装置
CN109560178A (zh) * 2017-09-27 2019-04-02 旭化成株式会社 半导体发光装置及紫外线发光模块
CN111179750A (zh) * 2019-12-12 2020-05-19 武汉华星光电技术有限公司 显示面板的结构和其制作方法
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