CN106165095B - 具有两个辅助发射极导体路径的半导体模块 - Google Patents
具有两个辅助发射极导体路径的半导体模块 Download PDFInfo
- Publication number
- CN106165095B CN106165095B CN201580008490.2A CN201580008490A CN106165095B CN 106165095 B CN106165095 B CN 106165095B CN 201580008490 A CN201580008490 A CN 201580008490A CN 106165095 B CN106165095 B CN 106165095B
- Authority
- CN
- China
- Prior art keywords
- emitter
- conductor path
- auxiliary
- terminal
- path
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004020 conductor Substances 0.000 title claims abstract description 150
- 239000004065 semiconductor Substances 0.000 title claims abstract description 100
- 238000010168 coupling process Methods 0.000 claims abstract description 23
- 238000005859 coupling reaction Methods 0.000 claims abstract description 23
- 230000008878 coupling Effects 0.000 claims abstract description 21
- 230000006698 induction Effects 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000013016 damping Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08116—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
- H03K17/127—Modifications for increasing the maximum permissible switched current in composite switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
- H03K17/0424—Modifications for accelerating switching by feedback from the output circuit to the control circuit by the use of a transformer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP14155208.3 | 2014-02-14 | ||
EP14155208 | 2014-02-14 | ||
PCT/EP2015/050611 WO2015121015A1 (en) | 2014-02-14 | 2015-01-14 | Semiconductor module with two auxiliary emitter conductor paths |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106165095A CN106165095A (zh) | 2016-11-23 |
CN106165095B true CN106165095B (zh) | 2018-10-19 |
Family
ID=50073099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580008490.2A Active CN106165095B (zh) | 2014-02-14 | 2015-01-14 | 具有两个辅助发射极导体路径的半导体模块 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10224424B2 (zh) |
EP (1) | EP3105791B1 (zh) |
JP (1) | JP6427589B2 (zh) |
CN (1) | CN106165095B (zh) |
WO (1) | WO2015121015A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201417564D0 (en) * | 2014-10-03 | 2014-11-19 | E2V Tech Uk Ltd | Switching arrangement |
CN108028646B (zh) * | 2016-05-19 | 2021-05-11 | 富士电机株式会社 | 绝缘栅型半导体装置以及绝缘栅型半导体装置的制造方法 |
CN106601801B (zh) * | 2016-12-01 | 2019-07-05 | 王培林 | 绝缘栅双极晶体管及其制备方法 |
JP2019068648A (ja) * | 2017-10-02 | 2019-04-25 | 株式会社豊田自動織機 | インバータ装置 |
EP3614562A1 (en) * | 2018-08-24 | 2020-02-26 | General Electric Technology GmbH | Electronic valve apparatus |
CN112886558A (zh) * | 2021-01-20 | 2021-06-01 | 浙江大学 | 一种功率半导体芯片并联结构及其驱动回路过流失效抑制方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0621635A1 (en) * | 1993-04-23 | 1994-10-26 | Fuji Electric Co. Ltd. | Power transistor module |
DE10005754A1 (de) * | 1999-08-12 | 2001-08-23 | Semikron Elektronik Gmbh | Leistungshalbleiterschaltungsanordnung mit schwingungsgedämpfter Parallelschaltung |
CN102684461A (zh) * | 2011-03-15 | 2012-09-19 | 英飞凌科技股份有限公司 | 包括用于补偿寄生电感的电路的半导体装置 |
CN103579146A (zh) * | 2012-07-31 | 2014-02-12 | 株式会社东芝 | 半导体装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03263363A (ja) * | 1990-02-23 | 1991-11-22 | Fuji Electric Co Ltd | 半導体装置 |
US5034343A (en) | 1990-03-08 | 1991-07-23 | Harris Corporation | Manufacturing ultra-thin wafer using a handle wafer |
WO1994023444A2 (en) | 1993-04-02 | 1994-10-13 | Harris Corporation | Bonded wafer processing with oxidative bonding |
US6362075B1 (en) | 1999-06-30 | 2002-03-26 | Harris Corporation | Method for making a diffused back-side layer on a bonded-wafer with a thick bond oxide |
JP4040838B2 (ja) * | 2000-12-18 | 2008-01-30 | 三菱電機株式会社 | 電力用半導体装置 |
JP2003009508A (ja) * | 2001-06-19 | 2003-01-10 | Mitsubishi Electric Corp | 電力用半導体装置 |
US6872640B1 (en) | 2004-03-16 | 2005-03-29 | Micron Technology, Inc. | SOI CMOS device with reduced DIBL |
JP4449772B2 (ja) * | 2004-04-09 | 2010-04-14 | 株式会社デンソー | パワー半導体スイッチング素子及びそれを用いた半導体パワーモジュール |
US7629649B2 (en) | 2006-05-09 | 2009-12-08 | Atmel Corporation | Method and materials to control doping profile in integrated circuit substrate material |
JP5542323B2 (ja) * | 2008-11-20 | 2014-07-09 | 東芝三菱電機産業システム株式会社 | ゲート回路 |
DK2249392T3 (da) | 2009-04-29 | 2020-08-17 | Abb Power Grids Switzerland Ag | Omvendt ledende halvlederenhed |
WO2013073042A1 (ja) | 2011-11-17 | 2013-05-23 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP5705099B2 (ja) * | 2011-12-16 | 2015-04-22 | 三菱電機株式会社 | 半導体スイッチング装置 |
DK2942870T3 (en) * | 2014-05-09 | 2018-10-22 | Abb Schweiz Ag | Device and method for a power semiconductor contact |
-
2015
- 2015-01-14 EP EP15700263.5A patent/EP3105791B1/en active Active
- 2015-01-14 WO PCT/EP2015/050611 patent/WO2015121015A1/en active Application Filing
- 2015-01-14 CN CN201580008490.2A patent/CN106165095B/zh active Active
- 2015-01-14 JP JP2016551706A patent/JP6427589B2/ja active Active
-
2016
- 2016-08-15 US US15/237,058 patent/US10224424B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0621635A1 (en) * | 1993-04-23 | 1994-10-26 | Fuji Electric Co. Ltd. | Power transistor module |
DE10005754A1 (de) * | 1999-08-12 | 2001-08-23 | Semikron Elektronik Gmbh | Leistungshalbleiterschaltungsanordnung mit schwingungsgedämpfter Parallelschaltung |
CN102684461A (zh) * | 2011-03-15 | 2012-09-19 | 英飞凌科技股份有限公司 | 包括用于补偿寄生电感的电路的半导体装置 |
CN103579146A (zh) * | 2012-07-31 | 2014-02-12 | 株式会社东芝 | 半导体装置 |
Also Published As
Publication number | Publication date |
---|---|
EP3105791A1 (en) | 2016-12-21 |
CN106165095A (zh) | 2016-11-23 |
EP3105791B1 (en) | 2021-05-26 |
JP6427589B2 (ja) | 2018-11-21 |
WO2015121015A1 (en) | 2015-08-20 |
US10224424B2 (en) | 2019-03-05 |
JP2017508287A (ja) | 2017-03-23 |
US20160351697A1 (en) | 2016-12-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106165095B (zh) | 具有两个辅助发射极导体路径的半导体模块 | |
JP6466030B2 (ja) | 半導体モジュール | |
CN106169471B (zh) | 开关性能改进的双向功率开关 | |
CN105281730B (zh) | 电子开关元件和集成传感器 | |
CN109314107B (zh) | 包括由高压晶体管形成的芯片并且包括由低压晶体管形成的芯片的集成电路 | |
JP6525923B2 (ja) | 電流/電力の平衡のための方法及び装置 | |
US10256640B2 (en) | Semiconductor device | |
CN202042483U (zh) | 一种功率半导体器件的封装结构 | |
CN106605300B (zh) | 半导体装置 | |
JP2020517125A (ja) | 一体型クランプ回路を有するパワーモジュールおよびそのプロセス | |
JP7320083B2 (ja) | パワーエレクトロニクス用のパッケージ | |
CN108389807A (zh) | 用于垂直半导体器件的精度提高的器件体系结构和方法 | |
KR20120105920A (ko) | 반도체 패키지 | |
CN102332908B (zh) | 具有可变电阻电路的半导体集成电路 | |
Kicin et al. | 1.7 kV high-current SiC power module based on multi-level substrate concept and exploiting MOSFET body diode during operation | |
JP2016035966A (ja) | 半導体集積回路装置 | |
CN105529309B (zh) | 半导体装置 | |
CN108233910B (zh) | 电子电路 | |
US10187050B2 (en) | Method and apparatus for balancing current and power | |
EP3955290A1 (en) | Switch device and method for manufacturing the switch device | |
CN103378036B (zh) | 半导体器件及其制造和使用方法 | |
CN111769723A (zh) | 具有附加发射极/源极路径的并联功率模块 | |
CN102545861A (zh) | 电阻电路、电路***和驱动器 | |
CN210956668U (zh) | 一种功率半导体模块的桥臂单元 | |
JP2019068661A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210512 Address after: Baden, Switzerland Patentee after: ABB grid Switzerland AG Address before: Baden, Switzerland Patentee before: Asea Brown Boveri Ltd. |
|
TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: Swiss Baden Patentee after: Hitachi energy Switzerland AG Address before: Swiss Baden Patentee before: ABB grid Switzerland AG |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240115 Address after: Zurich, SUI Patentee after: Hitachi Energy Co.,Ltd. Address before: Swiss Baden Patentee before: Hitachi energy Switzerland AG |
|
TR01 | Transfer of patent right |