JP6427589B2 - 2つの補助エミッタ導体経路を有する半導体モジュール - Google Patents
2つの補助エミッタ導体経路を有する半導体モジュール Download PDFInfo
- Publication number
- JP6427589B2 JP6427589B2 JP2016551706A JP2016551706A JP6427589B2 JP 6427589 B2 JP6427589 B2 JP 6427589B2 JP 2016551706 A JP2016551706 A JP 2016551706A JP 2016551706 A JP2016551706 A JP 2016551706A JP 6427589 B2 JP6427589 B2 JP 6427589B2
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- conductor path
- auxiliary
- terminal
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004020 conductor Substances 0.000 title claims description 148
- 239000004065 semiconductor Substances 0.000 title claims description 107
- 230000008878 coupling Effects 0.000 claims description 21
- 238000010168 coupling process Methods 0.000 claims description 21
- 238000005859 coupling reaction Methods 0.000 claims description 21
- 230000001939 inductive effect Effects 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000013016 damping Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08116—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
- H03K17/127—Modifications for increasing the maximum permissible switched current in composite switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/042—Modifications for accelerating switching by feedback from the output circuit to the control circuit
- H03K17/0424—Modifications for accelerating switching by feedback from the output circuit to the control circuit by the use of a transformer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Description
本発明は大電力半導体の分野に関する。特に、本発明は半導体モジュールおよび半導体アセンブリに関する。
半導体モジュールは1つ以上の半導体チップを含み、その各々が、ダイオード、トランジスタ、サイリスタなどの1つ以上の半導体を含む。このようなモジュールにおいて、10Aを超える電流および/または1000Vを超える電流をスイッチングするために、IGBTなどの大電力半導体スイッチが使用される。
高速スイッチングIGBTは大きいdI/dtおよびdU/dtを生じさせるが、これらは半導体モジュールの内部および外部のさまざまな電磁干渉問題の源となり得る。この電磁干渉作用は、Uind=L*dI/dtおよびIind=C*dI/dtという関係に起因する。
以下の本文において、添付図面に示された例示的実施形態を参照して、本発明の主題をより詳細に説明する。
図1は、半導体スイッチ14と、半導体スイッチ14に逆並列に接続された還流ダイオード16とを有する1つの半導体チップ12を含む半導体モジュール10を示す。
10 半導体モジュール、12 半導体チップ、14 半導体スイッチ、16 還流ダイオード、18 コレクタ、20 ゲート、22 エミッタ、24 コレクタ端子、26 ゲート端子、28 エミッタ端子、30、30a、30b、30c エミッタ導体経路、32、32a、32b、32c エミッタインダクタンス、34 第1の導体経路、36 第2の導体経路、38 補助エミッタ端子、40 ブリッジング点、42 ボンドワイヤ、44 第2の補助エミッタ端子、46 第3の導体経路、48、50、52 接続点、54 補助インダクタンス、56 ハウジング、58 半導体アセンブリ、60 ゲートドライブ、62 補助抵抗。
Claims (9)
- 半導体モジュール(10)であって、
コレクタ(18)、エミッタ(22)、およびゲート(20)を有する少なくとも1つの半導体スイッチ(14)を含む少なくとも1つの半導体チップ(12)と、
前記コレクタ(18)に接続されたコレクタ端子(24)と、
前記ゲート(20)に接続されたゲート端子(26)と、
エミッタインダクタンス(32)を有するエミッタ導体経路(30)を介して前記エミッタ(22)に接続されたエミッタ端子(28)と、
前記エミッタ(22)に接続された補助エミッタ端子(38)と、
前記エミッタ(22)に接続された第1の導体経路(34)と、
前記エミッタ(22)に接続されるとともに、前記第1の導体経路(34)とは異なる、前記エミッタ導体経路(30)との相互誘導結合を有する第2の導体経路(36)とを含み、
前記第1の導体経路(34)および前記第2の導体経路(36)は前記補助エミッタ端子(38)に接続可能であり、
前記半導体スイッチ(14)はIGBTであり、
前記第1の導体経路(34)および前記第2の導体経路(36)の各々は、当該導体経路を前記補助エミッタ端子(38)に接続するための、ボンドワイヤによって短絡し得るブリッジング点(40)を含む、半導体モジュール(10)。 - 前記第1の導体経路(34)および/または前記第2の導体経路(36)と前記エミッタインダクタンス(32)とが共通部分を有するように、前記第1の導体経路(34)および/または前記第2の導体経路(36)は前記エミッタ導体経路(30)に接続されている、請求項1に記載の半導体モジュール(10)。
- 前記第2の導体経路(36)は、前記第1の導体経路(34)と前記エミッタ導体経路(30)との相互誘導結合より少なくとも2倍強い、前記エミッタ導体経路(30)との相互誘導結合を有する、先行する請求項のうち1項に記載の半導体モジュール(10)。
- 前記第1の導体経路(34)および/または前記第2の導体経路(36)は、前記エミッタインダクタンス(32)とは異なる補助インダクタンス(54)を含み、および/または、前記第1の導体経路(34)および/または前記第2の導体(36)は補助インダクタンス(54)を介して前記エミッタインダクタンス(32)と誘導結合されている、先行する請求項のうち1項に記載の半導体モジュール(10)。
- 前記半導体モジュールは少なくとも2つの半導体スイッチ(14)を含み、前記少なくとも2つの半導体スイッチ(14)は、前記エミッタ端子(28)に接続されたそれぞれのエミッタ(22)を介して並列接続され、かつ、前記ゲート端子(26)に接続されたそれぞれのゲート(20)を介して並列接続されている、先行する請求項のうち1項に記載の半導体モジュール(10)。
- 第1の半導体スイッチ(14)は、第1のエミッタインダクタンス(32a)を有する第1のエミッタ導体経路(30a)を介して前記エミッタ端子(28)に接続され、第2の半導体スイッチ(14)は、第2のエミッタインダクタンス(32b)を有する第2のエミッタ導体経路(30b)を介して前記エミッタ端子(28)に接続され、
前記第1の導体経路(30a)および前記第2の導体経路(30b)のうち少なくとも1つは、前記第1のエミッタ導体経路(30a)と前記第2のエミッタ導体経路(30b)とを相互接続するための、ボンドワイヤによって短絡し得るブリッジング点(40)を含む、請求項5に記載の半導体モジュール(10)。 - 前記少なくとも2つの半導体スイッチ(14)は、それぞれのエミッタ(22)で、共通エミッタインダクタンス(32)を有する共通エミッタ導体経路(30)を介して、前記エミッタ端子(28)に接続されている、請求項5に記載の半導体モジュール(10)。
- 前記少なくとも1つの半導体チップ(12)と、前記エミッタ導体経路(30)と、前記第1の導体経路(34)と、前記第2の導体経路(36)とが共通ハウジング(56)内で組付けられ、
前記コレクタ端子(24)と、前記ゲート端子(26)と、前記エミッタ端子(28)と、前記補助エミッタ端子とが前記共通ハウジング(56)上に設けられている、先行する請求項のうち1項に記載の半導体モジュール(10)。 - 半導体アセンブリ(58)であって、
第1の補助エミッタ端子(38)と第2の補助エミッタ端子(44)とを含む、先行する請求項のうち1項に記載の半導体モジュール(10)を含み、前記半導体アセンブリ(58)は、
前記第1の補助エミッタ端子(38)と、
前記第1の補助エミッタ端子(38)および第1の補助抵抗(62)と、
前記第2の補助エミッタ端子(44)と、
前記第2の補助エミッタ端子(44)および第2の補助抵抗(62)とのうち少なくとも1つを介して、前記ゲート端子(26)と前記エミッタ(22)とを相互接続するゲートドライブ(60)をさらに含む、半導体アセンブリ(58)。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP14155208 | 2014-02-14 | ||
EP14155208.3 | 2014-02-14 | ||
PCT/EP2015/050611 WO2015121015A1 (en) | 2014-02-14 | 2015-01-14 | Semiconductor module with two auxiliary emitter conductor paths |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017508287A JP2017508287A (ja) | 2017-03-23 |
JP6427589B2 true JP6427589B2 (ja) | 2018-11-21 |
Family
ID=50073099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016551706A Active JP6427589B2 (ja) | 2014-02-14 | 2015-01-14 | 2つの補助エミッタ導体経路を有する半導体モジュール |
Country Status (5)
Country | Link |
---|---|
US (1) | US10224424B2 (ja) |
EP (1) | EP3105791B1 (ja) |
JP (1) | JP6427589B2 (ja) |
CN (1) | CN106165095B (ja) |
WO (1) | WO2015121015A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201417564D0 (en) | 2014-10-03 | 2014-11-19 | E2V Tech Uk Ltd | Switching arrangement |
DE112017000077T5 (de) * | 2016-05-19 | 2018-04-19 | Fuji Electric Co., Ltd. | Halbleitervorrichtung mit isolierendem gate und verfahren zum herstellen einer halbleitervorrichtung mit isolierendem gate |
CN106601801B (zh) * | 2016-12-01 | 2019-07-05 | 王培林 | 绝缘栅双极晶体管及其制备方法 |
JP2019068648A (ja) * | 2017-10-02 | 2019-04-25 | 株式会社豊田自動織機 | インバータ装置 |
EP3614562A1 (en) * | 2018-08-24 | 2020-02-26 | General Electric Technology GmbH | Electronic valve apparatus |
CN112886558A (zh) * | 2021-01-20 | 2021-06-01 | 浙江大学 | 一种功率半导体芯片并联结构及其驱动回路过流失效抑制方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03263363A (ja) * | 1990-02-23 | 1991-11-22 | Fuji Electric Co Ltd | 半導体装置 |
US5034343A (en) | 1990-03-08 | 1991-07-23 | Harris Corporation | Manufacturing ultra-thin wafer using a handle wafer |
WO1994023444A2 (en) | 1993-04-02 | 1994-10-13 | Harris Corporation | Bonded wafer processing with oxidative bonding |
JP2973799B2 (ja) * | 1993-04-23 | 1999-11-08 | 富士電機株式会社 | パワートランジスタモジュール |
US6362075B1 (en) | 1999-06-30 | 2002-03-26 | Harris Corporation | Method for making a diffused back-side layer on a bonded-wafer with a thick bond oxide |
DE10005754C2 (de) | 1999-08-12 | 2002-02-07 | Semikron Elektronik Gmbh | Leistungshalbleiterschaltungsanordnung mit schwingungsgedämpfter Parallelschaltung |
JP4040838B2 (ja) * | 2000-12-18 | 2008-01-30 | 三菱電機株式会社 | 電力用半導体装置 |
JP2003009508A (ja) * | 2001-06-19 | 2003-01-10 | Mitsubishi Electric Corp | 電力用半導体装置 |
US6872640B1 (en) | 2004-03-16 | 2005-03-29 | Micron Technology, Inc. | SOI CMOS device with reduced DIBL |
JP4449772B2 (ja) * | 2004-04-09 | 2010-04-14 | 株式会社デンソー | パワー半導体スイッチング素子及びそれを用いた半導体パワーモジュール |
US7629649B2 (en) | 2006-05-09 | 2009-12-08 | Atmel Corporation | Method and materials to control doping profile in integrated circuit substrate material |
JP5542323B2 (ja) * | 2008-11-20 | 2014-07-09 | 東芝三菱電機産業システム株式会社 | ゲート回路 |
EP2249392B1 (en) | 2009-04-29 | 2020-05-20 | ABB Power Grids Switzerland AG | Reverse-conducting semiconductor device |
US9793889B2 (en) * | 2011-03-15 | 2017-10-17 | Infineon Technologies Ag | Semiconductor device including a circuit to compensate for parasitic inductance |
DE112011103506T5 (de) | 2011-11-17 | 2014-11-06 | Fuji Electric Co., Ltd | Halbleitervorrichtung und Verfahren zur Herstellung der Halbleitervorrichtung |
JP5705099B2 (ja) | 2011-12-16 | 2015-04-22 | 三菱電機株式会社 | 半導体スイッチング装置 |
JP5710555B2 (ja) * | 2012-07-31 | 2015-04-30 | 株式会社東芝 | 半導体装置 |
EP2942870B1 (en) * | 2014-05-09 | 2018-07-25 | ABB Schweiz AG | Arrangement and method for a power semiconductor switch |
-
2015
- 2015-01-14 CN CN201580008490.2A patent/CN106165095B/zh active Active
- 2015-01-14 JP JP2016551706A patent/JP6427589B2/ja active Active
- 2015-01-14 EP EP15700263.5A patent/EP3105791B1/en active Active
- 2015-01-14 WO PCT/EP2015/050611 patent/WO2015121015A1/en active Application Filing
-
2016
- 2016-08-15 US US15/237,058 patent/US10224424B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2017508287A (ja) | 2017-03-23 |
CN106165095A (zh) | 2016-11-23 |
CN106165095B (zh) | 2018-10-19 |
EP3105791B1 (en) | 2021-05-26 |
EP3105791A1 (en) | 2016-12-21 |
WO2015121015A1 (en) | 2015-08-20 |
US10224424B2 (en) | 2019-03-05 |
US20160351697A1 (en) | 2016-12-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6427589B2 (ja) | 2つの補助エミッタ導体経路を有する半導体モジュール | |
JP6065771B2 (ja) | 半導体装置 | |
Anthon et al. | Switching investigations on a SiC MOSFET in a TO-247 package | |
JP6466030B2 (ja) | 半導体モジュール | |
US20160247751A1 (en) | Leadless electronic packages for gan devices | |
US8736040B2 (en) | Power module with current routing | |
US10256640B2 (en) | Semiconductor device | |
US10483966B2 (en) | Switching circuit | |
KR101231792B1 (ko) | 반도체 패키지 | |
JP2018029431A (ja) | パワー半導体モジュール用信号中継基板 | |
JP7438021B2 (ja) | 半導体装置 | |
JP2020191349A (ja) | 半導体装置 | |
JP5710555B2 (ja) | 半導体装置 | |
JP6434274B2 (ja) | 半導体装置 | |
JP2019079882A (ja) | 半導体装置 | |
US9866213B1 (en) | High voltage switch module | |
JP2020162354A (ja) | 半導体モジュールの製造方法 | |
JP2021072524A (ja) | 半導体リレーモジュールおよび半導体リレー回路 | |
US10218257B2 (en) | Power converter having parallel-connected semiconductor switches | |
JPWO2018096573A1 (ja) | 半導体モジュール | |
US10812065B2 (en) | Power supply control apparatus | |
Bayerer et al. | Low impedance gate drive for full control of voltage controlled power devices | |
JP2016001644A (ja) | 半導体モジュール | |
US20240014104A1 (en) | Semiconductor Package or a Printed Circuit Board, Both Modified to One or More of Reduce, Inverse or Utilize Magnetic Coupling Caused by the Load Current of a Semiconductor Transistor | |
CN110915120A (zh) | 功率转换装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171211 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180823 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20181002 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181029 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6427589 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |