CN106129240B - High-power LED chip and its COB packaging method based on graphene material - Google Patents
High-power LED chip and its COB packaging method based on graphene material Download PDFInfo
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- CN106129240B CN106129240B CN201610637825.3A CN201610637825A CN106129240B CN 106129240 B CN106129240 B CN 106129240B CN 201610637825 A CN201610637825 A CN 201610637825A CN 106129240 B CN106129240 B CN 106129240B
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- pcb board
- graphene material
- led chip
- power led
- heat
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Abstract
The present invention discloses a kind of high-power LED chip and COB packaging method based on graphene material of the present invention, the high-power LED chip includes: lens, light source assembly, pcb board and heat-radiating substrate, enclosure space is formed between lens and pcb board, light source assembly is set in the enclosure space, and light source assembly is connected by the side of the first adhesive layer and pcb board, the opposite other side of pcb board is connect by the second adhesive layer with heat-radiating substrate；First adhesive layer and the second adhesive layer respectively include: multi-layer graphene material and heat-conducting glue.The present invention is based on the heat dissipation effects that the high-power LED chip of graphene material and its COB packaging method can effectively improve high-power LED chip, prolong its service life.
Description
Technical field
The present invention relates to the technical field of great power LED single-chip more particularly to a kind of big function based on graphene material
Rate LED chip and its COB packaging method.
Background technique
With the progress of micro photo-electro-mechanical processing technology and the improvement of manufacturing process, the encapsulating structure and technique of LED chip are not
Disconnected progress, the LED power of single chip size is higher and higher, and the light efficiency of chip is become better and better, great power LED under same brightness,
Power consumption is the 1/10 of ordinary incandescent lamp, is the 1/4 of fluorescent tube, and energy conservation and environmental protection benefit highly significant is widely used in business
Illumination, industrial lighting and wearable lighting area.The input power of high power device is in 1W or more, and chip size is in 1mm × mm
To between 2.5mm × 2.5mm, the power density of chip is very big.Currently, the input power of great power LED 80% is converted to heat
Can, if these heats cannot be discharged in time, LED light luminous efficiency can be made to reduce, fluorescent powder accelerated ageing, service life
Shorten.Based on current semiconductor processing technology, LED chip tends to high-power, and chip size tends to minimize, and system distributes
Heat it is more and more, carrying out excellent heat dissipation design to high-power LED chip becomes particularly important.
For high-power LED chip heat dissipation design, the heating power consumption of system, volume and weight requirement are considered, and dissipate
The operability of thermal.The heat of great power LED system is distributed using effective heat sink structure, heat sink structure has
Point of active heat dissipation and passive heat radiation, active heat dissipation have the modes such as fan, heat pipe, liquid convection that install additional, and passive type dissipates
Heat is radiated by cooling fin, the mechanical structure with heat dissipation effect.
Therefore one kind can effectively improve heat dissipation effect, the great power LED core based on graphene material to prolong the service life
Piece and its COB packaging method urgently propose.
Summary of the invention
In order to solve the above-mentioned technical problem, the invention proposes high-power LED chips and its COB based on graphene material
Packaging method, the technology can effectively improve the heat dissipation effect of high-power LED chip, prolong its service life.
In order to achieve the above object, technical scheme is as follows:
High-power LED chip based on graphene material includes: lens, light source assembly, pcb board and heat-radiating substrate, thoroughly
Enclosure space is formed between mirror and pcb board, light source assembly is set in the enclosure space, and light source assembly passes through the first adhesive layer
It is connect with the side of pcb board, the opposite other side of pcb board is connect by the second adhesive layer with heat-radiating substrate；
First adhesive layer and the second adhesive layer include: multi-layer graphene material and heat-conducting glue.
A kind of high-power LED chip structure based on graphene material of the present invention is simple, can be had using grapheme material
Effect realizes heat dissipation, extends the service life of high-power LED chip.
Based on the above technical solution, following improvement can also be done:
As a preferred option, light source assembly includes: LED wafer and the fluorophor for being coated on LED wafer outer surface,
LED wafer is connect by the first adhesive layer with pcb board.
Using the above preferred scheme, fluorophor is that fluorescent powder mixes glue-line, and fluorophor solid is uniformly coated on LED crystalline substance
On piece guarantees photochromic uniformity.
As a preferred option, heat-radiating substrate is that I-shaped AlN ceramic is heat sink.
Using the above preferred scheme, good heat dissipation effect.
As a preferred option, multiple microchannels are equipped in I-shaped AlN ceramic is heat sink.
Using the above preferred scheme, it is capable of increasing heat dissipation area.
As a preferred option, multi-layer graphene material is coated on the inner wall of each microchannel.
Using the above preferred scheme, good heat dissipation effect.
As a preferred option, hydrophilic coating is uniformly coated on the outer surface of lens.
Using the above preferred scheme, lens surface, which coats one layer of hydrophilic coating, can effectively improve light extraction efficiency, to saturating
There is certain mechanical protection effect on mirror surface.
As a preferred option, pcb board is equipped with electrostatic discharge protective circuit, control compensation circuit and driving circuit.
Using the above preferred scheme, structure is simple.
The COB packaging method of high-power LED chip based on graphene material, for encapsulating based on the big of graphene material
Power LED chips, specifically includes the following steps:
1) with dilator by whole LED wafer film uniform expansion；
2) the thermally conductive glue point of grapheme material will be mixed on the side of pcb board with dispenser, form the first adhesive layer；
3) staff will pierce LED wafer and be placed in sweat box and stood by LED wafer with brilliant pen thorn is pierced on pcb board,
It is taken out from sweat box after thermally conductive adhesive curing；
4) with vacuum WAND will form electrostatic discharge protective circuit, control compensation circuit, driving circuit electronic component point exist
On pcb board, pcb board is placed in climatic chamber and is stood；
5) it is welded with the lead that aluminium wire bonding equipment carries out COB encapsulation；
6) glue-line for being mixed with fluorescent powder is coated uniformly in LED wafer with dispenser, forms fluorophor；
7) lens are bonded on pcb board；
8) finally, the thermally conductive glue point of grapheme material will be mixed on pcb board using dispenser, the second adhesive layer is formed,
Pcb board and heat-radiating substrate are attached.
That the present invention is based on the COB packaging method packaging densities of the high-power LED chip of graphene material is good, optical density is high,
Excellent heat dissipation performance.
As a preferred option, further comprising the steps of:
9) in the outer surface of lens, coating uniformly has hydrophilic coating.
Using the above preferred scheme, lens surface, which coats one layer of hydrophilic coating, can effectively improve light extraction efficiency, to saturating
There is certain mechanical protection effect on mirror surface.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the high-power LED chip provided in an embodiment of the present invention based on graphene material.
Fig. 2 is the heat sink structural schematic diagram of I-shaped AlN ceramic provided in an embodiment of the present invention.
Fig. 3 is the structural schematic diagram of bilayer graphene material provided in an embodiment of the present invention.
Fig. 4 is the top view of bilayer graphene material provided in an embodiment of the present invention.
Wherein: 1 lens, 2 light source assemblies, 21 LED wafers, 22 fluorophor, 3 pcb boards, 4 heat-radiating substrates, 5 first bondings
Layer, 6 second adhesive layers, 7 microchannels, 8 hydrophilic coatings.
Specific embodiment
The preferred embodiment that the invention will now be described in detail with reference to the accompanying drawings.
In order to reach the purpose of the present invention, high-power LED chip and its COB packaging method based on graphene material its
In in some embodiments,
As shown in Figure 1, the high-power LED chip based on graphene material include: lens 1, light source assembly 2, pcb board 3 with
And heat-radiating substrate 4, enclosure space is formed between lens 1 and pcb board 3, light source assembly 2 is set in the enclosure space, and light source
Component 2 is connect by the first adhesive layer 5 with the side of pcb board 3, and the opposite other side of pcb board 3 by the second adhesive layer 6 and dissipates
Hot substrate 4 connects；
First adhesive layer 5 and the second adhesive layer 6 include: bilayer graphene material and heat-conducting glue.
Light source assembly 2 includes: LED wafer 21 and the fluorophor 22 for being coated on LED wafer outer surface, and LED wafer passes through
First adhesive layer 5 is connect with pcb board 3.
Heat-radiating substrate 4 is that I-shaped aluminium nitride (AlN) ceramic substrate is heat sink, is set in I-shaped AlN ceramic is heat sink
There are multiple microchannels 7, bilayer graphene material is coated on the inner wall of each microchannel 7.
Pcb board 3 is equipped with electrostatic discharge protective circuit, control compensation circuit and driving circuit.
The COB packaging method of high-power LED chip based on graphene material, for encapsulating based on the big of graphene material
Power LED chips, specifically includes the following steps:
1) with dilator by whole LED wafer film uniform expansion；
2) the thermally conductive glue point of grapheme material will be mixed on the side of pcb board 3 with dispenser, form the first adhesive layer 5；
3) staff by LED wafer with brilliant pen thorn is pierced on pcb board 3, will pierce LED wafer be placed on it is quiet in sweat box
It sets, is taken out from sweat box after thermally conductive adhesive curing；
4) with vacuum WAND will form electrostatic discharge protective circuit, control compensation circuit, driving circuit electronic component point exist
On pcb board 3, pcb board 3 is placed in climatic chamber and is stood；
5) it is welded with the lead that aluminium wire bonding equipment carries out COB encapsulation；
6) glue-line for being mixed with fluorescent powder is coated uniformly in LED wafer 21 with dispenser, forms fluorophor 22；
7) lens 1 are bonded on pcb board 3；
8) the thermally conductive glue point of grapheme material will be mixed on pcb board 3 using dispenser, form the second adhesive layer 6, it will
Pcb board 3 and heat-radiating substrate 4 are attached.
LED chip has the encapsulation of metallic support formula, the encapsulation of surface patch formula, chip directly-mounting type (COB, Chip On Board)
Four kinds of forms such as encapsulation, system in package formula.Metallic support formula packaging thermal resistance is larger, the service life is shorter；The encapsulation of surface patch formula can
By property height, it is convenient for automated production；The yields of system packaged type product is not high, cost of investment is larger.With electronic component
Change towards micro-nano-scale, COB encapsulation has high packaging density, is higher by the characteristics such as optical density, and heat sinking function is preferable, choosing
It can satisfy the demand for development and the market demand of semiconductor lighting industry with the high-power LED chip of COB encapsulating structure.It is worth note
Meaning can detect the quality of COB encapsulation after COB encapsulation with special detection tool.
Heat-radiating substrate 4 of the invention is processed into the AlN ceramic heat sink structure of I shape using surface, and
Inside is provided with microchannel 7, and microchannel 7 is similar to capillary, can rapid cooling, such design can satisfy high-power
The cooling requirements of LED chip, the manufacturing cost of another aspect product, which is compared to active heat dissipation, also certain reduction.
Graphene is the primitive of numerous carbonaceous materials, and hardness is high, has excellent electricity and heat characteristic, single-layer graphene
Heat conductivity value is up to 3080~5150W/mK, and single-layer graphene can form multi-layer graphene, experiment preparation by stack manner
Graphene all there is certain thickness, the present embodiment selects thermal interfacial material of the bilayer graphene as high-power LED chip,
It can effectively solve the problem of aspect is radiated in semiconductor illumination technique.
A kind of course of work of the high-power LED chip based on graphene material of the present invention is as follows:
After the power is turned on, LED wafer starts to work and generates heat, and heat is transferred to pcb board 3 by the first adhesive layer 5,
The lower end surface of pcb board 3 connects the second adhesive layer 6, and the second adhesive layer 6 transfers heat to heat-radiating substrate 4, and heat-radiating substrate 4 utilizes
The grapheme material being stained on its internal unique multiple microchannel 7 and inner pipe wall, the heat that can rapidly distribute LED wafer
Amount dissipates.
A kind of high-power LED chip and its COB packaging method based on graphene material of the present invention has below beneficial to effect
Fruit:
First, lens 1 can reduce the loss for the light that LED is sent out.
Second, fluorescent powder mixes glue-line solid and is uniformly coated in LED wafer, forms fluorophor, can guarantee in this way
Photochromic uniformity.
Third, pcb board 3 are metal material, are high-power LED chips for charge carrier, while being also heat dissipation carrier,
There are electrostatic discharge protective circuit, control compensation circuit, driving circuit on pcb board 3.
4th, for connecting LED wafer and metal pcb board 3, the heat that LED chip is come out turns the first adhesive layer 5
It moves to metal pcb board 3, I-shaped AlN ceramic is heat sink to carry out hot transmitting by the second adhesive layer 6 and metal pcb board 3.
5th, using COB encapsulating structure packaging density is good, optical density is high, excellent heat dissipation performance, using grapheme material conduct
The thermal interfacial material of radiator structure, thermal coefficient are four times of aluminium sheet, can simplify the heat sink structure of high-power LED chip, fastly
Quickly cooling but LED chip and power component.
6th, as shown in Fig. 2, the microchannel 7 of I-shaped AlN heat sink structure, is similar to capillary, can increase heat dissipation
Area, so that a part of heat is dissipated by small tubule, the inner-wall spraying bilayer graphene material of microchannel 7.
7th, as shown in Figures 3 and 4, Fig. 3 is the structure chart of the main material bilayer graphene material of heat conduction, by it
Mix thermally conductive glue connection LED wafer and metal pcb board 3, be deposited on I-shaped AlN ceramic it is heat sink on, and be sprayed on micro-
On the inner wall in channel 7, it is more conducive to distributing for heat.
A kind of high-power LED chip and its COB packaging method based on graphene material of the present invention proposes to be based on graphene
The heat dissipation design of material, is encapsulated using COB, is existed by changing heat sink material and heat sink structure to improve high-power LED chip
Heat dissipation problem.
In order to further optimize implementation result of the invention, in other embodiment, remaining feature technology phase
Together, the difference is that, hydrophilic coating 8 is uniformly coated on the outer surface of lens 1.
Meanwhile the COB packaging method of the high-power LED chip based on graphene material is further comprising the steps of:
9) hydrophilic coating 8 is uniformly coated in the outer surface of lens 1.
Using the scheme of above preferred embodiment, 1 surface of lens, which coats one layer of hydrophilic coating 8, can effectively improve out light efficiency
Rate has certain mechanical protection to act on 1 surface of lens, reduces the influence of water droplet and dust to LED illumination.
The above are merely the preferred embodiment of the present invention, it is noted that for those of ordinary skill in the art,
Without departing from the concept of the premise of the invention, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.
Claims (6)
1. the high-power LED chip based on graphene material characterized by comprising lens, light source assembly, pcb board and dissipate
Hot substrate forms enclosure space between the lens and the pcb board, the light source assembly is set in the enclosure space, and
The light source assembly is connect by the first adhesive layer with the side of the pcb board, and the opposite other side of the pcb board passes through second
Adhesive layer is connect with the heat-radiating substrate；
First adhesive layer and second adhesive layer include: multi-layer graphene material and heat-conducting glue；
The heat-radiating substrate is that I-shaped AlN ceramic is heat sink, is equipped in the I-shaped AlN ceramic is heat sink multiple
Microchannel is coated with multi-layer graphene material on the inner wall of each microchannel.
2. the high-power LED chip according to claim 1 based on graphene material, which is characterized in that the light source group
Part includes: LED wafer and the fluorophor for being coated on the LED wafer outer surface, and the LED wafer is bonded by described first
Layer is connect with the pcb board.
3. the high-power LED chip according to claim 1 or 2 based on graphene material, which is characterized in that described
Hydrophilic coating is uniformly coated on the outer surface of mirror.
4. the high-power LED chip according to claim 3 based on graphene material, which is characterized in that on the pcb board
Equipped with electrostatic discharge protective circuit, control compensation circuit and driving circuit.
5. the COB packaging method of the high-power LED chip based on graphene material, for encapsulating as claimed in claim 4 be based on
The high-power LED chip of graphene material, which is characterized in that specifically includes the following steps:
1) with dilator by whole LED wafer film uniform expansion；
2) the thermally conductive glue point of grapheme material will be mixed on the side of pcb board with dispenser, form the first adhesive layer；
3) staff will pierce LED wafer and be placed in sweat box and stood by LED wafer with brilliant pen thorn is pierced on pcb board, wait lead
It is taken out from sweat box after hot glue solidification；
4) the electronic component point of electrostatic discharge protective circuit, control compensation circuit, driving circuit will be formed in pcb board with vacuum WAND
On, pcb board is placed in climatic chamber and is stood；
5) it is welded with the lead that aluminium wire bonding equipment carries out COB encapsulation；
6) glue-line for being mixed with fluorescent powder is coated uniformly in LED wafer with dispenser, forms fluorophor；
7) lens are bonded on pcb board；
8) the thermally conductive glue point of grapheme material will be mixed on pcb board using dispenser, forms the second adhesive layer, by pcb board and
Heat-radiating substrate is attached.
6. the COB packaging method of the high-power LED chip according to claim 5 based on graphene material, feature exist
In further comprising the steps of:
9) hydrophilic coating is uniformly coated in the outer surface of the lens.
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| CN108198805A (en) * | 2017-12-06 | 2018-06-22 | 浙江亿米光电科技有限公司 | A kind of high-capacity LED coiled-coil filament |
| CN110518108A (en) * | 2019-07-09 | 2019-11-29 | 安徽捷鑫光电科技有限公司 | A kind of LED light bar preparation method |
| WO2022178669A1 (en) * | 2021-02-23 | 2022-09-01 | 深圳市艾比森光电股份有限公司 | Led display screen |
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