CN202535631U - Aluminum oxide ceramic circuit board having metal posts and packaging structure of aluminum oxide ceramic circuit board - Google Patents
Aluminum oxide ceramic circuit board having metal posts and packaging structure of aluminum oxide ceramic circuit board Download PDFInfo
- Publication number
- CN202535631U CN202535631U CN2012200230527U CN201220023052U CN202535631U CN 202535631 U CN202535631 U CN 202535631U CN 2012200230527 U CN2012200230527 U CN 2012200230527U CN 201220023052 U CN201220023052 U CN 201220023052U CN 202535631 U CN202535631 U CN 202535631U
- Authority
- CN
- China
- Prior art keywords
- oxide ceramic
- aluminium oxide
- weld pad
- ceramic substrate
- circuit board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73257—Bump and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Abstract
The utility model provides an aluminum oxide ceramic circuit board having metal posts and a packaging structure of the aluminum oxide ceramic circuit board. The aluminum oxide ceramic circuit board having the metal posts includes an aluminum oxide ceramic substrate provided with a first side edge and a second side edge. And at least one metal post is arranged in a predetermined solid phase crystallization area of the aluminum oxide ceramic substrate. And the metal post extends from the first side edge to the second side edge of the aluminum oxide ceramic substrate. At least one metal post is arranged in the aluminum oxide ceramic substrate below the solid phase crystallization area. The metal post penetrates through the aluminum oxide ceramic substrate, thereby forming a quick heat conduction path. When a light emitting diode chip arranged on the solid phase crystallization area is lighted and starts to generate heat, the metal posts can lead the heat to get away from the solid phase crystallization area and get to a heat dissipating sheet quickly. Therefore, the light emitting diode chip is enabled to perform functions efficiently.
Description
Technical field
The relevant a kind of light-emittingdiode encapsulating structure of the utility model is particularly in order to provide the heat efficiency of preferable LED substrate.
Background technology
Needs in response to market; Industry has been developed many high-power light emitting diodes at present; Because the LED crystal grain on the luminous dipolar object light source module has characteristic and the little advantage of volume that point-source of light is concentrated, so can be widely used in purposes such as area source, point-source of light, illumination.
These high-power light emitting diodes can produce the light source of high brightness; But also produce high thermal source relatively; And these high thermals source will have influence on the useful life of high-power light emitting diode, therefore can when the high-power light emitting diode is made, use the preferable material of radiating efficiency to make pedestal; Let the thermal source that luminescent wafer produced directly be transmitted on this pedestal; To guarantee the useful life of high-power light emitting diode that only use the material of high cooling efficiency can make dealer's manufacturing cost higher, relative consumer also need pay more cost.
General LED is fixed on the substrate with circuit medium, and substrate material can be PCB multi-layer sheet, metal or ceramic substrate.Aluminum oxide substrate is typical structural ceramic material; The general normal structure that need bear mechanical stress that is applied in is used part; Especially utilize itself have high-melting-point, high rigidity, characteristic such as insulating properties is good, radiating efficiency is high with corrosion resistance is good, can under harsh high temperature corrosion environment, use or be applied in the purposes of electric insulation.
Influencing heat conducting efficient has numerous factors, causes the temperature fall except the thermal resistance interface of circuit itself, and material of its substrate itself and area of dissipation also are one of important factors; Because the volume of LED pedestal is very little usually; So its heat-transfer rate is limited, and make that the thermal source heat radiation is too late, the permanent time gets off; Possibly undermine luminescent wafer usefulness, make the chip light source uniformity can not satisfy required specification.
Summary of the invention
For solving foregoing problems, the utility model provides a kind of aluminium oxide ceramics circuit board with metal column, comprises:
One aluminium oxide ceramic substrate has a first side and a second side, and this aluminium oxide ceramic substrate is provided with at least one thermal hole in predetermined crystal bonding area, and these thermal holes extend to the second side from the first side of this aluminium oxide ceramic substrate; And
At least one metal column is arranged in these thermal holes.
Preferably, these thermal holes form circle, square or rectangle through laser drill or punching method.
Preferably, these thermal holes are used for will containing ag material or tin-containing material is inserted wherein to form these metal columns with the filling perforation print process.
Preferably, this aluminium oxide ceramic substrate is alumina plate or nitrogenize aluminium sheet.
The utility model provides a kind of light-emittingdiode (LED) encapsulating structure in addition, comprises: above-mentioned aluminium oxide ceramics circuit board with metal column; First weld pad and one second weld pad are positioned at the first side of aluminium oxide ceramic substrate; And the 3rd weld pad and the 4th weld pad are positioned at the second side of aluminium oxide ceramic substrate; Wherein first weld pad is connected with the 3rd weld pad by first conductive hole, and second weld pad is connected with the 4th weld pad by second conductive hole; Be electrically connected to the LED wafer of this first weld pad and this second weld pad.
Preferably, above-mentioned LED encapsulating structure more comprises an articulamentum that is used to connect this LED wafer and these metal columns.
Preferably, this articulamentum is the eutectic layer.
Preferably, this articulamentum is an adhesion coating.
Preferably, this articulamentum is elargol layer or soldering-tin layer.
Preferably, these metal columns are connected with a fin in the second side of this aluminium oxide ceramic substrate.
The utility model can reach following effect:
At least one metal column is set in the aluminium oxide ceramic substrate below crystal bonding area, and these metal columns can directly pass aluminium oxide ceramic substrate and form a heat conduction approach fast.LED Chips for Communication on being located at crystal bonding area is lighted and when beginning to produce thermal source, these metal columns just can guide rapidly thermal source away from crystal bonding area to fin, just can make the LED Chips for Communication can its function of more efficient performance thus.
Description of drawings
Fig. 1 is the profile according to the aluminium oxide ceramics circuit board with metal column of the preferred embodiment of the utility model.
Fig. 2 is the top view according to the aluminium oxide ceramics circuit board with metal column of the preferred embodiment of the utility model.
Fig. 3 is the profile according to the light-emittingdiode encapsulating structure of first preferred embodiment of the utility model.
Fig. 4 is the top view according to the light-emittingdiode encapsulating structure of first preferred embodiment of the utility model.
Fig. 5 is the profile according to the light-emittingdiode encapsulating structure of second preferred embodiment of the utility model.
Fig. 6 is the profile according to the light-emittingdiode encapsulating structure of the 3rd preferred embodiment of the utility model.
[main element symbol description]
100, aluminium oxide ceramics circuit board; 101, aluminium oxide ceramic substrate;
103, first side; 105, second side;
106, predetermined crystal bonding area; 107, first weld pad;
109, second weld pad; 111, the 3rd weld pad;
113, the 4th weld pad; 115, first conductive hole;
116, first conductive pole; 117, second conductive hole;
118, second conductive pole; 119, LED wafer;
121, bonding wire; 123, bonding wire;
125, thermal hole; 127, metal column;
129, articulamentum; 131, fin;
300, light-emittingdiode encapsulating structure; 321, bonding wire;
323, tin bead layer; 421, tin bead layer;
423, tin bead layer.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment the utility model is described further so that those skilled in the art can better understand the utility model and implementing, but the embodiment that lifts not conduct to the qualification of the utility model.
Please with reference to Fig. 1 and Fig. 2, Fig. 1 is the profile according to the aluminium oxide ceramics circuit board with metal column of the preferred embodiment of the utility model; Fig. 2 is the top view according to the aluminium oxide ceramics circuit board with metal column of the preferred embodiment of the utility model.The utility model provides a kind of aluminium oxide ceramics circuit board 100 with metal column; Comprise: aluminium oxide ceramic substrate 101; Have first side 103 and second side 105; And aluminium oxide ceramic substrate 101 is provided with at least one thermal hole 125 in predetermined crystal bonding area 106, and the first side 103 of these thermal hole 125 self-alumina ceramic substrates 101 extends to second side 105; And at least one metal column 127 is arranged in these thermal holes 125.
The dual-side that is positioned at thermal hole 125 can be provided with first conductive hole 115 and second conductive hole 117 respectively, and filling perforation print process capable of using will contain ag material or tin-containing material is inserted wherein, to form first conductive pole 116 and second conductive pole 118.
Please with reference to Fig. 3 and Fig. 4, Fig. 3 is the profile according to the light-emittingdiode encapsulating structure of first preferred embodiment of the utility model; Fig. 4 is the top view according to the light-emittingdiode encapsulating structure of first preferred embodiment of the utility model.As shown in Figure 3, the light-emittingdiode encapsulating structure 300 of the utility model comprises: aluminium oxide ceramic substrate 101 has first side 103 and second side 105; First weld pad 107 and second weld pad 109 are positioned at the first side 103 of aluminium oxide ceramic substrate 101; And the 3rd weld pad 111 and the 4th weld pad 113 are positioned at the second side 105 of aluminium oxide ceramic substrate 101; Wherein first weld pad 107 is connected 111 by first conductive hole 115 with the 3rd weld pad, and second weld pad 109 is connected with the 4th weld pad 113 by second conductive hole 117; LED wafer 119 is electrically connected to first weld pad 107 and second weld pad 109 by two bonding wires 121,123; Reach the aluminium oxide ceramic substrate 101 that at least one thermal hole 125 is arranged in LED wafer 119 belows, the first side 103 of these thermal hole 125 self-alumina ceramic substrates 101 extends to second side 105.
The aluminium oxide ceramic substrate 101 of present embodiment is one to have the substrate of high thermal conductivity, and it can be alumina plate or nitrogenize aluminium sheet, but not as limit.First weld pad 107 is connected 111 by first conductive pole 116 with the 3rd weld pad, and second weld pad 109 is connected with the 4th weld pad 113 by second conductive pole 118.
127 one-tenth column structures of metal column engage with LED wafer 119 by articulamentum 129.LED wafer 119 can plate a metal cladding on surface, metal column 127 junction surface with before metal column 127 engages, and engages under proper temperature with LED wafer 119 more afterwards.The juncture of LED wafer 119 and metal column 127 except above-mentioned eutectic mode, also can engage by the viscose glue with high thermal conductivity coefficient, and viscose glue can be copper glue, elargol or scolding tin.In addition, metal column 127 can be connected with a fin 131 in the second side 105 of aluminium oxide ceramic substrate 101, and fin 131 can be processed by the aluminium or the copper metal of high thermal conductivity coefficient.
Because metal column 127 is that eutectic engages with LED wafer 119; Has lower thermal impedance; So the heat that LED wafer 119 is produced can conduct to the thermal column 127 that aluminium oxide ceramic substrate 101 is passed in the below via articulamentum 129 rapidly; Conduct on aluminium oxide ceramic substrate 101 and the fin 131, by heating column 127 again so on whole heat transfer efficiency, can significantly promote.
Fig. 5 is the profile according to the light-emittingdiode encapsulating structure of second preferred embodiment of the utility model.Be with the difference of first preferred embodiment that mode that the LED wafer 119 of present embodiment is electrically connected to first weld pad 107 and second weld pad 109 changes with bonding wire 321 and be connected to first weld pad 107, tin bead layer 323 is connected to second weld pad 109.
Fig. 6 is the profile according to the light-emittingdiode encapsulating structure of the 3rd preferred embodiment of the utility model.Be with the difference of first preferred embodiment that mode that the LED wafer 119 of present embodiment is electrically connected to first weld pad 107 and second weld pad 109 changes with two tin bead layers 421,423 and be connected to first weld pad 107 and second weld pad 109.
The above embodiment is the preferred embodiment that proves absolutely that the utility model is lifted, and the protection range of the utility model is not limited thereto.Being equal to that the technical staff in present technique field is done on the utility model basis substitutes or conversion, all within the protection range of the utility model.The protection range of the utility model is as the criterion with claims.
Claims (9)
1. the aluminium oxide ceramics circuit board with metal column is characterized in that, comprises:
One aluminium oxide ceramic substrate has a first side and a second side, and this aluminium oxide ceramic substrate is provided with at least one thermal hole in predetermined crystal bonding area, and these thermal holes extend to the second side from the first side of this aluminium oxide ceramic substrate; And
At least one metal column is arranged in these thermal holes.
2. the aluminium oxide ceramics circuit board with metal column as claimed in claim 1 is characterized in that these thermal holes form circle, square or rectangle through laser drill or punching.
3. the aluminium oxide ceramics circuit board with metal column as claimed in claim 1 is characterized in that, this aluminium oxide ceramic substrate is alumina plate or nitrogenize aluminium sheet.
4. one kind contains the described LED encapsulating structure with aluminium oxide ceramics circuit board of metal column of claim 1, it is characterized in that, comprises:
One said aluminium oxide ceramics circuit board with metal column;
One first weld pad and one second weld pad are positioned at the first side of this aluminium oxide ceramic substrate; And one the 3rd weld pad and one the 4th weld pad are positioned at the second side of this aluminium oxide ceramic substrate; Wherein this first weld pad is connected with the 3rd weld pad by one first conductive hole, and this second weld pad is connected with the 4th weld pad by one second conductive hole; And
One LED wafer is electrically connected to this first weld pad and this second weld pad.
5. LED encapsulating structure as claimed in claim 4 is characterized in that, more comprises an articulamentum that connects this LED wafer and these metal columns.
6. LED encapsulating structure as claimed in claim 5 is characterized in that, this articulamentum is the eutectic layer.
7. LED encapsulating structure as claimed in claim 5 is characterized in that, this articulamentum is an adhesion coating.
8. LED encapsulating structure as claimed in claim 5 is characterized in that, this articulamentum is elargol layer or soldering-tin layer.
9. LED encapsulating structure as claimed in claim 4 is characterized in that these metal columns are connected with a fin in the second side of this aluminium oxide ceramic substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012200230527U CN202535631U (en) | 2011-12-28 | 2012-01-18 | Aluminum oxide ceramic circuit board having metal posts and packaging structure of aluminum oxide ceramic circuit board |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110446163.9 | 2011-12-28 | ||
| CN201110446163 | 2011-12-28 | ||
| CN2012200230527U CN202535631U (en) | 2011-12-28 | 2012-01-18 | Aluminum oxide ceramic circuit board having metal posts and packaging structure of aluminum oxide ceramic circuit board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202535631U true CN202535631U (en) | 2012-11-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012200230527U Expired - Fee Related CN202535631U (en) | 2011-12-28 | 2012-01-18 | Aluminum oxide ceramic circuit board having metal posts and packaging structure of aluminum oxide ceramic circuit board |
Country Status (1)
| Country | Link |
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| CN (1) | CN202535631U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105246245A (en) * | 2015-08-31 | 2016-01-13 | 苏州斯尔特微电子有限公司 | Novel ceramic circuit substrate |
| CN107591474A (en) * | 2016-07-08 | 2018-01-16 | 比亚迪股份有限公司 | LED module and preparation method thereof |
| CN108391367A (en) * | 2018-02-09 | 2018-08-10 | 烽火通信科技股份有限公司 | A kind of optical module of good heat dispersion performance |
| CN109378308A (en) * | 2014-12-10 | 2019-02-22 | 上海兆芯集成电路有限公司 | Circuit substrate and packaging structure |
| CN109874223A (en) * | 2017-12-05 | 2019-06-11 | 同泰电子科技股份有限公司 | Flexible circuitry plate structure that can be thermally conductive |
| CN114449729A (en) * | 2020-11-06 | 2022-05-06 | 中移物联网有限公司 | Mainboard protection structure and assembling method thereof |
-
2012
- 2012-01-18 CN CN2012200230527U patent/CN202535631U/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109378308A (en) * | 2014-12-10 | 2019-02-22 | 上海兆芯集成电路有限公司 | Circuit substrate and packaging structure |
| CN109378308B (en) * | 2014-12-10 | 2021-05-28 | 上海兆芯集成电路有限公司 | Circuit substrate and packaging structure |
| CN105246245A (en) * | 2015-08-31 | 2016-01-13 | 苏州斯尔特微电子有限公司 | Novel ceramic circuit substrate |
| CN105246245B (en) * | 2015-08-31 | 2018-07-20 | 苏州斯尔特微电子有限公司 | A kind of ceramic circuit board |
| CN107591474A (en) * | 2016-07-08 | 2018-01-16 | 比亚迪股份有限公司 | LED module and preparation method thereof |
| CN109874223A (en) * | 2017-12-05 | 2019-06-11 | 同泰电子科技股份有限公司 | Flexible circuitry plate structure that can be thermally conductive |
| CN108391367A (en) * | 2018-02-09 | 2018-08-10 | 烽火通信科技股份有限公司 | A kind of optical module of good heat dispersion performance |
| CN114449729A (en) * | 2020-11-06 | 2022-05-06 | 中移物联网有限公司 | Mainboard protection structure and assembling method thereof |
| CN114449729B (en) * | 2020-11-06 | 2023-11-10 | 中移物联网有限公司 | Main board protection structure and assembly method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121114 Termination date: 20150118 |
|
| EXPY | Termination of patent right or utility model |