CN105785251A - Minority carrier lifetime detection method for silicon blocks - Google Patents
Minority carrier lifetime detection method for silicon blocks Download PDFInfo
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- CN105785251A CN105785251A CN201410810984.XA CN201410810984A CN105785251A CN 105785251 A CN105785251 A CN 105785251A CN 201410810984 A CN201410810984 A CN 201410810984A CN 105785251 A CN105785251 A CN 105785251A
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Abstract
The invention discloses a minority carrier lifetime detection method for silicon blocks. The method comprises the steps of dividing the top surface of a silicon ingot into a plurality of array regions, cutting the silicon ingot according to the divided array along the height direction of the silicon ingot, defining silicon blocks at the four top corners of the array as the first type of silicon blocks, defining silicon blocks at the four sides of the array as the second type of silicon blocks, defining all the rest silicon blocks as the third type of silicon blocks, and conducting the minority carrier lifetime test on the set surfaces of the first type of silicon blocks, the second type of silicon blocks and the third type of silicon blocks. Each first type of silicon block is provided with a to-be-tested surface. Every two adjacent second type of silicon blocks are at most provided with one to-be-tested surface. Every two adjacent third type of silicon blocks are at most provided with two to-be-tested surfaces. Each single silicon block is at most provided with one to-be-tested surface. For any silicon block, if the silicon block is provided with no to-be-tested surface, at least one silicon block, adjacent to the above silicon block, is provided with the to-be-tested surface. The above minority carrier lifetime detection method is high in working efficiency.
Description
Technical field
The present invention relates to Ingot quality detection technique field, in particular, relate to the minority carrier life time detection method of a kind of silico briquette.
Background technology
At present, in the detection of casting polycrystal silicon ingot, silico briquette few son detection after silicon ingot cutting is critically important link, the life-span size of few son generally characterizes the electric property of silico briquette, after the silico briquette that the life-span of son is low less cuts into silicon chip, the conversion efficiency of the solaode made is relatively low, it is difficult to meet electric energy transfer standard.
Cell piece used by solaode is that the silicon ingot of preparation is prepared from ingot furnace.When carrying out minority carrier life time detection, first according to the size of the cell piece of required preparation, described silicon ingot is carried out cutting and form the silico briquette of multiple small volumes, then each silico briquette is carried out minority carrier life time detection.
When prior art carries out minority carrier life time detection, detection process is complicated, inefficiency.The work efficiency how improving minority carrier life time detection makes a problem currently urgently to be resolved hurrily.
Summary of the invention
For solving the problems referred to above, the invention provides the minority carrier life time detection method of a kind of silico briquette, improve the work efficiency of minority carrier life time detection.
For achieving the above object, the embodiment of the present application provides the minority carrier life time detection method of a kind of silico briquette, and this minority carrier life time detection method includes:
The end face of silicon ingot being divided into the region of M × N number of array arrangement, in described silicon ingot short transverse, according to the array divided, described silicon ingot is cut into M × N number of silico briquette, M, N are positive integer；
It is first kind silico briquette that definition is positioned at the silico briquette of described four top corner regions of array, and the silico briquette being positioned at described array four edge regions is Equations of The Second Kind silico briquette, and other silico briquettes are the 3rd class silico briquette；
The setting surface of described first kind silico briquette is carried out minority carrier life time detection, the setting surface of selected Equations of The Second Kind silico briquette is carried out minority carrier life time detection, the setting surface of the 3rd selected class silico briquette is carried out minority carrier life time detection；
Wherein, each first kind silico briquette is respectively provided with a detected surface；Two Equations of The Second Kind silico briquettes of arbitrary neighborhood at most has a detected surface；Two the 3rd class silico briquettes of arbitrary neighborhood at most have two detected surface；To same silico briquette, at most there is a detected surface；To arbitrary silico briquette such as its surface being not detected among, then it has at least an adjacent silico briquette to have detected surface.
Preferably, in above-mentioned minority carrier life time detection method, the end face of described silicon ingot is rectangle, and the length of side span of described rectangle is 950mm-1150mm, including endpoint value；The described region that the end face of silicon ingot is divided into M × N number of array arrangement is the region that described silicon ingot is divided into 6 × 6 array arrangements.
Preferably, in above-mentioned minority carrier life time detection method, the described setting surface to described first kind silico briquette carries out minority carrier life time detection and is:
The setting surface of all of first kind silico briquette is carried out minority carrier life time detection, and wherein, the detected surface of all of first kind silico briquette is each parallel to the column direction of described array.
Preferably, in above-mentioned minority carrier life time detection method, the described setting surface to selected Equations of The Second Kind silico briquette carries out minority carrier life time detection and is:
The Equations of The Second Kind silico briquette being pointed to described array the second row, the Equations of The Second Kind silico briquette being positioned at described array fourth line and be positioned at the setting surface of Equations of The Second Kind silico briquette of described array the 4th row and carry out minority carrier life time detection；
Wherein, the detected surface of the Equations of The Second Kind silico briquette being positioned at described array the second row is relative with described array the third line；The detected surface of the Equations of The Second Kind silico briquette being positioned at described array fourth line is relative with described array fifth line；The detected surface of the Equations of The Second Kind silico briquette being positioned at described array the 4th row is relative with described array the 3rd row.
Preferably, in above-mentioned minority carrier life time detection method, the described setting surface to the 3rd selected class silico briquette carries out minority carrier life time detection and is:
The setting surface of the 3rd class silico briquette being pointed to described array the second row and the 3rd class silico briquette being positioned at described array fourth line carries out minority carrier life time detection；
Wherein, the detected surface of the 3rd class silico briquette being positioned at described array the second row is relative with described array the third line；The detected surface of the 3rd class silico briquette being positioned at described array fourth line is relative with described array fifth line.
Preferably, in above-mentioned minority carrier life time detection method, the end face of described silicon ingot is rectangle, and the length of side span of described rectangle is 780mm-900mm, including endpoint value；The described region that the end face of silicon ingot is divided into M × N number of array arrangement is the region that described silicon ingot is divided into 5 × 5 array arrangements.
Preferably, in above-mentioned minority carrier life time detection method, the described setting surface to described first kind silico briquette carries out minority carrier life time detection and is:
The setting surface of all of first kind silico briquette is carried out minority carrier life time detection；
Wherein, the detected surface of the first kind silico briquette and the first kind silico briquette being positioned at described array fifth line the 5th row that are positioned at described array the first row first row is parallel to the column direction of described array；The detected surface of the first kind silico briquette and the first kind silico briquette being positioned at described array fifth line first row that are positioned at described array the first row the 5th row is parallel to the line direction of described array.
Preferably, in above-mentioned minority carrier life time detection method, the described setting surface to selected Equations of The Second Kind silico briquette carries out minority carrier life time detection and is:
The Equations of The Second Kind silico briquette being pointed to described array the third line, the setting surface being positioned at the tertial Equations of The Second Kind silico briquette of described array carry out minority carrier life time detection；
Wherein, the detected surface of the Equations of The Second Kind silico briquette being positioned at described array the third line first row is relative with described array the second row；The detected surface of the Equations of The Second Kind silico briquette being positioned at described array the third line the 5th row is relative with the fourth line of described array；The detected surface of the Equations of The Second Kind silico briquette being positioned at described array the 3rd row the first row is relative with the 4th of described array the row；The detected surface of the Equations of The Second Kind silico briquette being positioned at described array the 3rd row fifth line is relative with the secondary series of described array.
Preferably, in above-mentioned minority carrier life time detection method, the described setting surface to the 3rd selected class silico briquette carries out minority carrier life time detection and is:
The 3rd class silico briquette being pointed to described array the third line and the setting surface being positioned at the tertial 3rd class silico briquette of described array carry out minority carrier life time detection；
Wherein, the 3rd class silico briquette being positioned at described array the third line secondary series is relative with the second row of the detected surface being positioned at the tertial 3rd class silico briquette of described array the third line Yu described array；The detected surface of the 3rd class silico briquette being positioned at described array the 3rd row the second row is relative with the 4th of described array the row；The 3rd class silico briquette being positioned at described array the third line the 4th row is relative with the fourth line of described array；The detected surface of the 3rd class silico briquette being positioned at described array the 3rd row fourth line is relative with the secondary series of described array.
By foregoing description, the minority carrier life time detection method that technical solution of the present invention provides includes: the end face of silicon ingot is divided into the region of M × N number of array arrangement, in described silicon ingot short transverse, according to the array divided, described silicon ingot being cut into M × N number of silico briquette, M, N are positive integer；It is first kind silico briquette that definition is positioned at the silico briquette of described four top corner regions of array, and the silico briquette being positioned at described array four edge regions is Equations of The Second Kind silico briquette, and other silico briquettes are the 3rd class silico briquette；The setting surface of described first kind silico briquette is carried out minority carrier life time detection, the setting surface of selected Equations of The Second Kind silico briquette is carried out minority carrier life time detection, the setting surface of the 3rd selected class silico briquette is carried out minority carrier life time detection；Wherein, each first kind silico briquette is respectively provided with a detected surface；Two Equations of The Second Kind silico briquettes of arbitrary neighborhood at most has a detected surface；Two the 3rd class silico briquettes of arbitrary neighborhood at most have two detected surface；To same silico briquette, at most there is a detected surface；To arbitrary silico briquette such as its surface being not detected among, then it has at least an adjacent silico briquette to have detected surface.Described minority carrier life time detection method adopts coplanar test mode, only the setting surface of selected silico briquette need to be carried out minority carrier life time detection, without all surface of each silico briquette is carried out minority carrier life time detection, can realize, to the detection of silico briquette minority carrier life time after cutting, improve work efficiency.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, the accompanying drawing used required in embodiment or description of the prior art will be briefly described below, apparently, accompanying drawing in the following describes is only embodiments of the invention, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to the accompanying drawing provided.
The schematic flow sheet of a kind of spoon life detecting method that Fig. 1 provides for the embodiment of the present application；
A kind of silicon ingot cutting that Fig. 2 provides for the embodiment of the present application and the structural representation of detected surface labelling；
Another kind of silicon ingot cutting that Fig. 3 provides for the embodiment of the present application and the structural representation of detected surface labelling.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of protection of the invention.
Schematic flow sheet with reference to a kind of minority carrier life time detection method that Fig. 1, Fig. 1 provide for the embodiment of the present application.Described minority carrier life time detection method includes:
Step S11: the end face of silicon ingot is divided into the region of M × N number of array arrangement, in described silicon ingot short transverse, is cut into M × N number of silico briquette according to the array divided by described silicon ingot, and M, N are positive integer.
When the end face of described silicon ingot is ingot casting, silicon ingot is towards the surface of mouth of pot, and its end face is the surface towards crucible bottom.The concrete value of described M, N sets according to the size of described silicon ingot, at this, does not limit.
Step S12: it is first kind silico briquette that definition is positioned at the silico briquette of described four top corner regions of array, and the silico briquette being positioned at described array four edge regions is Equations of The Second Kind silico briquette, and other silico briquettes are the 3rd class silico briquette.
Described first kind silico briquette is the ingot section contacted with four top corner regions of crucible, and it has the contacts side surfaces of two sides and crucible.With the established part of crucible wall area contact during described Equations of The Second Kind silico briquette, it has the contacts side surfaces of a side and crucible.Described 3rd class silico briquette is positioned at the zone line of described silicon ingot, its side all not with the contacts side surfaces of described crucible.
Regulation is cut by technical scheme described in the embodiment of the present application, it is possible to obtain more silico briquette discontiguous with crucible side, the impurity defect of described silico briquette is few.More high-quality silico briquette can be obtained.
Step S13: the setting surface of described first kind silico briquette is carried out minority carrier life time detection, carries out minority carrier life time detection to the setting surface of selected Equations of The Second Kind silico briquette, and the setting surface of the 3rd selected class silico briquette is carried out minority carrier life time detection.
Wherein, each first kind silico briquette is respectively provided with a detected surface；Two Equations of The Second Kind silico briquettes of arbitrary neighborhood at most has a detected surface；Two the 3rd class silico briquettes of arbitrary neighborhood at most have two detected surface；To same silico briquette, at most there is a detected surface；To arbitrary silico briquette such as its surface being not detected among, then it has at least an adjacent silico briquette to have detected surface.
Described minority carrier life time detection method adopts coplanar test mode, only the setting surface of selected silico briquette need to be carried out minority carrier life time detection, without all surface of each silico briquette is carried out minority carrier life time detection, can realize, to the detection of silico briquette minority carrier life time after cutting, improve work efficiency.
A kind of silicon ingot provided for the embodiment of the present application with reference to Fig. 2, Fig. 2 cuts and the structural representation of detected surface labelling, and the end face of described silicon ingot 20 is rectangle, and the length of side span of described rectangle is 950mm-1150mm, including endpoint value.Now, the described region that the end face of silicon ingot is divided into M × N number of array arrangement is the region that described silicon ingot is divided into 6 × 6 array arrangements, is cut into 36 pieces of silico briquettes 21 by silicon ingot 20 shown in Fig. 2 according to the mode of 6 × 6 array arrangements.In Fig. 2, letter A represents first kind silico briquette, and letter b represents Equations of The Second Kind silico briquette, and letter C represents the 3rd class silico briquette.Corresponding letter numeral below is the numbering of silico briquette.
As in figure 2 it is shown, according to above-mentioned mode classification, first kind silico briquette includes A1, A6, A31 and A36.Equations of The Second Kind silico briquette includes: C8-C11, C14-C17, C20-C23 and C26-C29.3rd class silico briquette includes: B2-B5, B32-B35, B7, B12, B13, B18, B19, B24, B25 and B30.In Fig. 2 illustrated embodiment, the described setting surface to described first kind silico briquette carries out minority carrier life time detection and is: the setting surface of all of first kind silico briquette is carried out minority carrier life time detection.Wherein, the detected surface of all of first kind silico briquette is each parallel to the column direction of described array.
It should be noted that dotted line is the detected surface of corresponding silico briquette in Fig. 2.
In Fig. 2 illustrated embodiment, the described setting surface to selected Equations of The Second Kind silico briquette carries out minority carrier life time detection: be pointed to Equations of The Second Kind silico briquette B7, B12 of described array the second row, it is positioned at Equations of The Second Kind silico briquette B19, B24 of described array fourth line, and the setting surface being positioned at Equations of The Second Kind silico briquette B4, B34 of described array the 4th row carries out minority carrier life time detection.Wherein, the detected surface of Equations of The Second Kind silico briquette B7, B12 of being positioned at described array the second row is relative with described array the third line；The detected surface of Equations of The Second Kind silico briquette B19, B24 of being positioned at described array fourth line is relative with described array fifth line；The detected surface of Equations of The Second Kind silico briquette B4, B34 of being positioned at described array the 4th row is relative with described array the 3rd row.
In Fig. 2 illustrated embodiment, the described setting surface to the 3rd selected class silico briquette carries out minority carrier life time detection and is: the setting surface of the 3rd class silico briquette C8-C11 being pointed to described array the second row and the 3rd class silico briquette C20-C23 being positioned at described array fourth line carries out minority carrier life time detection；Wherein, the detected surface of the 3rd class silico briquette C8-C11 being positioned at described array the second row is relative with described array the third line；The detected surface of the 3rd class silico briquette C20-C23 being positioned at described array fourth line is relative with described array fifth line.
In Fig. 2 illustrated embodiment, it is shown that silicon ingot 20 removes the width of line of cut, the end face of each silico briquette of cutting is 156mm × 156mm, in order to preparation 156mm × 156mm solar battery sheet.In this embodiment, by the set-up mode of described cutting mode and detected surface, it is possible to make each equal equivalence of silico briquette 21 carry out minority carrier life time detection.As for the 3rd class silico briquette C14, although it not being carried out minority carrier life time detection, but itself and the 3rd class silico briquette C8 have identical facet, therefore, minority carrier life time detection is carried out for detected surface described in the 3rd class silico briquette C8, is namely equivalent to the corresponding surface of the 3rd class silico briquette C14 has been carried out minority carrier life time detection.Visible, Fig. 2 illustrated embodiment without all carrying out minority carrier life time detection to all of silico briquette, have only to 18 detected surface are carried out minority carrier life time detection, just can be equivalent at least one surface to each silico briquette and carry out minority carrier life time detection, utilize coplanar thought, greatly reduce the number of detected surface, improve the work efficiency of minority carrier life time detection.
The another kind of silicon ingot provided for the embodiment of the present application with reference to Fig. 3, Fig. 3 cuts and the structural representation of detected surface labelling.The end face of described silicon ingot is rectangle, and the length of side span of described rectangle is 780mm-900mm, including endpoint value.Now, the described region that the end face of silicon ingot is divided into M × N number of array arrangement is the region that described silicon ingot is divided into 5 × 5 array arrangements, is cut into 25 pieces of silico briquettes 31 by silicon ingot 30 shown in Fig. 2 according to the mode of 5 × 5 array arrangements.In Fig. 3, letter a represents that first kind silico briquette, letter b represent Equations of The Second Kind silico briquette, and letter c represents the 3rd class silico briquette.Corresponding letter numeral below is the numbering of silico briquette.
As it is shown on figure 3, according to above-mentioned mode classification, first kind silico briquette includes a1, a5, a21 and a25；Equations of The Second Kind silico briquette includes b2-b4, b6, b10, b11, b15, b16, b20 and b22-b24；3rd class silico briquette includes c7-c9, c12-c14 and c17-c19.Identical with Fig. 2 illustrated embodiment, in Fig. 3, dotted line is the detected surface of corresponding silico briquette.
In Fig. 3 illustrated embodiment, the described setting surface to described first kind silico briquette carries out minority carrier life time detection and is: the setting surface of all of first kind silico briquette is carried out minority carrier life time detection.Wherein, the detected surface of the first kind silico briquette a1 and the first kind silico briquette being positioned at described array fifth line the 5th row a25 that are positioned at described array the first row first row is parallel to the column direction of described array；The detected surface being positioned at first kind silico briquette a5 and the first kind silico briquette a21 being positioned at described array fifth line first row of described array the first row the 5th row is parallel to the line direction of described array.
In Fig. 3 illustrated embodiment, the described setting surface to selected Equations of The Second Kind silico briquette carries out minority carrier life time detection: being pointed to Equations of The Second Kind silico briquette b11, b15 of described array the third line, the setting surface being positioned at described array tertial Equations of The Second Kind silico briquette b3, b23 carries out minority carrier life time detection.Wherein, the detected surface of the Equations of The Second Kind silico briquette b11 being positioned at described array the third line first row is relative with described array the second row；The detected surface of the Equations of The Second Kind silico briquette b15 being positioned at described array the third line the 5th row is relative with the fourth line of described array；The detected surface of the Equations of The Second Kind silico briquette b3 being positioned at described array the 3rd row the first row is relative with the 4th of described array the row；The detected surface of the Equations of The Second Kind silico briquette b23 being positioned at described array the 3rd row fifth line is relative with the secondary series of described array.
In Fig. 3 illustrated embodiment, the described setting surface to the 3rd selected class silico briquette carries out minority carrier life time detection and is: the 3rd class silico briquette c12-c14 being pointed to described array the third line and the setting surface being positioned at tertial 3rd class silico briquette c8, c13, the c18 of described array carry out minority carrier life time detection.According to above-mentioned setting, c13 only has a tested surface.Wherein, the 3rd class silico briquette c12 being positioned at described array the third line secondary series is relative with the second row of the detected surface being positioned at the tertial 3rd class silico briquette c13 of described array the third line Yu described array；The detected surface of the 3rd class silico briquette c8 being positioned at described array the 3rd row the second row is relative with the 4th of described array the row；The 3rd class silico briquette c14 being positioned at described array the third line the 4th row is relative with the fourth line of described array；The detected surface of the 3rd class silico briquette c18 being positioned at described array the 3rd row fourth line is relative with the secondary series of described array.
In Fig. 3 illustrated embodiment, it is shown that silicon ingot 30 removes the width of line of cut, the end face of each silico briquette of cutting is 156mm × 156mm, in order to preparation 156mm × 156mm solar battery sheet.In this embodiment, by the set-up mode of described cutting mode and detected surface, it is possible to make each equal equivalence of silico briquette 31 carry out minority carrier life time detection.As for the 3rd class silico briquette c7, although it not being carried out minority carrier life time detection, but itself and the 3rd class silico briquette c12 have identical facet, therefore, minority carrier life time detection is carried out for detected surface described in the 3rd class silico briquette c12, is namely equivalent to the corresponding surface of the 3rd class silico briquette c7 has been carried out minority carrier life time detection.Visible, Fig. 3 illustrated embodiment without all carrying out minority carrier life time detection to all of silico briquette, have only to 13 detected surface are carried out minority carrier life time detection, just can be equivalent at least one surface to each silico briquette and carry out minority carrier life time detection, utilize coplanar thought, greatly reduce the number of detected surface, improve the work efficiency of minority carrier life time detection.
In the present embodiment, drug of first choice ensures that detected face number is minimum, then preferential in first kind silico briquette surface configuration detected surface, is Equations of The Second Kind silico briquette in fact, is finally the 3rd class silico briquette.Therefore, any one embodiment is all arrange a detected surface on described first kind silico briquette.
Sub-test instrunment can be adopted less to carry out described minority carrier life time detection.
By foregoing description, when adopting the minority carrier life time detection method described in the embodiment of the present application mode to detect, for carrying out minority carrier life time detection according to the setting detected surface of the silicon chip after setting array arrangement cutting, adopt coplanar thought, each silico briquette at most has a detected surface, and without all silico briquettes are carried out minority carrier life time detection, detected surface number is few, detection efficiency is high.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses the present invention.The multiple amendment of these embodiments be will be apparent from for those skilled in the art, and generic principles defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention is not intended to be limited to the embodiments shown herein, and is to fit to the widest scope consistent with principles disclosed herein and features of novelty.
Claims (9)
1. the minority carrier life time detection method of a silico briquette, it is characterised in that including:
The end face of silicon ingot being divided into the region of M × N number of array arrangement, in described silicon ingot short transverse, according to the array divided, described silicon ingot is cut into M × N number of silico briquette, M, N are positive integer；
It is first kind silico briquette that definition is positioned at the silico briquette of described four top corner regions of array, and the silico briquette being positioned at described array four edge regions is Equations of The Second Kind silico briquette, and other silico briquettes are the 3rd class silico briquette；
The setting surface of described first kind silico briquette is carried out minority carrier life time detection, the setting surface of selected Equations of The Second Kind silico briquette is carried out minority carrier life time detection, the setting surface of the 3rd selected class silico briquette is carried out minority carrier life time detection；
Wherein, each first kind silico briquette is respectively provided with a detected surface；Two Equations of The Second Kind silico briquettes of arbitrary neighborhood at most has a detected surface；Two the 3rd class silico briquettes of arbitrary neighborhood at most have two detected surface；To same silico briquette, at most there is a detected surface；To arbitrary silico briquette such as its surface being not detected among, then it has at least an adjacent silico briquette to have detected surface.
2. detection method according to claim 1, it is characterised in that the end face of described silicon ingot is rectangle, the length of side span of described rectangle is 950mm-1150mm, including endpoint value；The described region that the end face of silicon ingot is divided into M × N number of array arrangement is the region that described silicon ingot is divided into 6 × 6 array arrangements.
3. detection method according to claim 2, it is characterised in that the described setting surface to described first kind silico briquette carries out minority carrier life time detection and is:
The setting surface of all of first kind silico briquette is carried out minority carrier life time detection, and wherein, the detected surface of all of first kind silico briquette is each parallel to the column direction of described array.
4. detection method according to claim 3, it is characterised in that the described setting surface to selected Equations of The Second Kind silico briquette carries out minority carrier life time detection and is:
The Equations of The Second Kind silico briquette being pointed to described array the second row, the Equations of The Second Kind silico briquette being positioned at described array fourth line and be positioned at the setting surface of Equations of The Second Kind silico briquette of described array the 4th row and carry out minority carrier life time detection；
Wherein, the detected surface of the Equations of The Second Kind silico briquette being positioned at described array the second row is relative with described array the third line；The detected surface of the Equations of The Second Kind silico briquette being positioned at described array fourth line is relative with described array fifth line；The detected surface of the Equations of The Second Kind silico briquette being positioned at described array the 4th row is relative with described array the 3rd row.
5. detection method according to claim 4, it is characterised in that the described setting surface to the 3rd selected class silico briquette carries out minority carrier life time detection and is:
The setting surface of the 3rd class silico briquette being pointed to described array the second row and the 3rd class silico briquette being positioned at described array fourth line carries out minority carrier life time detection；
Wherein, the detected surface of the 3rd class silico briquette being positioned at described array the second row is relative with described array the third line；The detected surface of the 3rd class silico briquette being positioned at described array fourth line is relative with described array fifth line.
6. detection method according to claim 1, it is characterised in that the end face of described silicon ingot is rectangle, the length of side span of described rectangle is 780mm-900mm, including endpoint value；The described region that the end face of silicon ingot is divided into M × N number of array arrangement is the region that described silicon ingot is divided into 5 × 5 array arrangements.
7. detection method according to claim 6, it is characterised in that the described setting surface to described first kind silico briquette carries out minority carrier life time detection and is:
The setting surface of all of first kind silico briquette is carried out minority carrier life time detection；
Wherein, the detected surface of the first kind silico briquette and the first kind silico briquette being positioned at described array fifth line the 5th row that are positioned at described array the first row first row is parallel to the column direction of described array；The detected surface of the first kind silico briquette and the first kind silico briquette being positioned at described array fifth line first row that are positioned at described array the first row the 5th row is parallel to the line direction of described array.
8. detection method according to claim 7, it is characterised in that the described setting surface to selected Equations of The Second Kind silico briquette carries out minority carrier life time detection and is:
The Equations of The Second Kind silico briquette being pointed to described array the third line, the setting surface being positioned at the tertial Equations of The Second Kind silico briquette of described array carry out minority carrier life time detection；
Wherein, the detected surface of the Equations of The Second Kind silico briquette being positioned at described array the third line first row is relative with described array the second row；The detected surface of the Equations of The Second Kind silico briquette being positioned at described array the third line the 5th row is relative with the fourth line of described array；The detected surface of the Equations of The Second Kind silico briquette being positioned at described array the 3rd row the first row is relative with the 4th of described array the row；The detected surface of the Equations of The Second Kind silico briquette being positioned at described array the 3rd row fifth line is relative with the secondary series of described array.
9. detection method according to claim 8, it is characterised in that the described setting surface to the 3rd selected class silico briquette carries out minority carrier life time detection and is:
The 3rd class silico briquette being pointed to described array the third line and the setting surface being positioned at the tertial 3rd class silico briquette of described array carry out minority carrier life time detection；
Wherein, the 3rd class silico briquette being positioned at described array the third line secondary series is relative with the second row of the detected surface being positioned at the tertial 3rd class silico briquette of described array the third line Yu described array；The detected surface of the 3rd class silico briquette being positioned at described array the 3rd row the second row is relative with the 4th of described array the row；The 3rd class silico briquette being positioned at described array the third line the 4th row is relative with the fourth line of described array；The detected surface of the 3rd class silico briquette being positioned at described array the 3rd row fourth line is relative with the secondary series of described array.
Priority Applications (1)
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| CN108225955A (en) * | 2017-12-30 | 2018-06-29 | 洛阳阿特斯光伏科技有限公司 | A kind of hardness evaluations method of silicon rod |
| CN109760219A (en) * | 2019-03-12 | 2019-05-17 | 赛维Ldk太阳能高科技(新余)有限公司 | A kind of silico briquette head-tail minimizing technology and removal device |
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| CN109760219A (en) * | 2019-03-12 | 2019-05-17 | 赛维Ldk太阳能高科技(新余)有限公司 | A kind of silico briquette head-tail minimizing technology and removal device |
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