CN102466646A - Appearance detection method of quasi-monocrystalline silicon wafer - Google Patents
Appearance detection method of quasi-monocrystalline silicon wafer Download PDFInfo
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- CN102466646A CN102466646A CN2011104015750A CN201110401575A CN102466646A CN 102466646 A CN102466646 A CN 102466646A CN 2011104015750 A CN2011104015750 A CN 2011104015750A CN 201110401575 A CN201110401575 A CN 201110401575A CN 102466646 A CN102466646 A CN 102466646A
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Abstract
The invention relates to an appearance detection method of a quasi-monocrystalline silicon wafer, comprising the following steps of: firstly dividing the surface area of the quasi-monocrystalline silicon wafer into a grid of n*n arrays so as to make each grid area to account for 1(n*n) of the quasi-monocrystalline silicon wafer area; making a transparent substrate on the arrays through mesh lines to form a two-dimension grid gage; superposing the two-dimension grid gage with the edge of the silicon wafer; observing the surface of the silicon wafer through the transparent substrate of the two-dimension grid gage, finding the location distribution of monocrystalline crystal grains and polycrystalline crystal grains on the silicon wafer, and calculating; finally, multiplying the grid number of the monocrystalline crystal grains by 1/(n*n) to calculate the area proportion of the monocrystalline crystal grains in the whole silicon wafer, and multiplying the grid number of the polycrystalline crystal grains by 1/(n*n) to calculate the area proportion of the polycrystalline crystal grains in the whole quasi-monocrystalline silicon wafer. By the adoption of the method provided by the invention, the quality of the quasi-monocrystalline silicon wafer can be rapidly evaluated, and accuracy of the detection can be raised.
Description
Technical field
The present invention relates to a kind of detection method, relate in particular to a kind of appearance detecting method of quasi-monocrystalline silicon sheet.
Background technology
The method of quasi-monocrystalline silicon sheet silicon has appearred in the existing market producing with the method for polycrystalline ingot casting; This method combines monocrystalline, polycrystalline advantage; Improve competitiveness of product; The quasi-monocrystalline silicon sheet of making through said method the part poly grains of growth at random occurs usually inevitably except comprising the large tracts of land single grain.But ratio single, that the poly grains area accounts for the whole silicon wafer area is an important technology parameter of quasi-monocrystalline silicon sheet, is used for estimating the quasi-monocrystalline silicon tablet quality.At present not cheaply, quantivative approach and instrument do not measure this scale parameter easily.
Summary of the invention
The object of the invention is exactly the problems referred to above that exist in the prior art in order to solve, and a kind of appearance detecting method of quasi-monocrystalline silicon sheet is provided.
The object of the invention is realized through following technical scheme:
The appearance detecting method of quasi-monocrystalline silicon sheet, it may further comprise the steps: 1. step is divided into the grid of n * n array with quasi-monocrystalline silicon sheet surface area, makes each grid area account for 1/ (n * n) of whole quasi-monocrystalline silicon sheet area; 2. step with n * n array, is made in a transparent substrates through mesh lines, forms the two-dimensional grid gage; 3. step is affixed on quasi-monocrystalline silicon sheet surface with the two-dimensional grid gage; 4. step adjusts peripheral four edge lines of mesh lines of two-dimensional grid gage, to overlap with the silicon chip edge; 5. step sees through the transparent substrates silicon chip surface observation of two-dimensional grid gage, finds out the position distribution of single grain on the silicon chip, poly grains, and counts the number of grid that single grain, poly grains occupy; Step 6., the number of grid that single grain is occupied takes advantage of 1/, and (n * n), be the ratio that single grain accounts for the whole silicon wafer area takes advantage of 1/ (n * n), be the ratio that poly grains accounts for whole quasi-monocrystalline silicon sheet area with the number of grid that poly grains occupies.
The appearance detecting method of above-mentioned quasi-monocrystalline silicon sheet, wherein: described n=3,5,6,7,8,9,10,11,12,13.
Further; The appearance detecting method of above-mentioned quasi-monocrystalline silicon sheet, wherein: the manufacturing approach of described two-dimensional grid gage is in the darkroom, to utilize optical plotter to draw at film egative film middle position; To pass through that light paints that the film egative film of operation develops, photographic fixing is handled; Make light drawing shape zone remain, do not become transparent part, constitute the two-dimensional grid gage by the rayed zone.
Further, the appearance detecting method of above-mentioned quasi-monocrystalline silicon sheet, wherein: described mesh lines live width is 10um to 156um, transparent substrate thickness is 5um to 200um.
Again further, the appearance detecting method of above-mentioned quasi-monocrystalline silicon sheet, wherein: described mesh lines live width is 50um, transparent substrate thickness is 50um.
The advantage of technical scheme of the present invention is mainly reflected in: through statistical computation intuitively, can draw the ratio that single grain, poly grains occupy quasi-monocrystalline silicon sheet area, can estimate the quasi-monocrystalline silicon tablet quality fast.And, rely on the existence of two-dimensional grid gage, can improve the accuracy rate of detection, be easy to promote.
Description of drawings
The object of the invention, advantage and characteristics will illustrate through the non-limitative illustration of following preferred embodiment and explain.These embodiment only are the prominent examples of using technical scheme of the present invention, and all technical schemes of taking to be equal to replacement or equivalent transformation and forming all drop within the scope of requirement protection of the present invention.In the middle of these accompanying drawings,
Fig. 1 is that the two-dimensional grid gage is placed on the synoptic diagram of executing on the quasi-monocrystalline silicon sheet.
1 quasi-monocrystalline silicon sheet, 2 two-dimensional grid gages
Embodiment
The appearance detecting method of quasi-monocrystalline silicon sheet, its unusual being may further comprise the steps:
At first, quasi-monocrystalline silicon sheet surface area is divided into the grid of n * n array, makes each grid area account for 1/ (n * n) of whole quasi-monocrystalline silicon sheet 1 area.Specifically, be example with n=10, each grid is represented 1/100 of quasi-monocrystalline silicon sheet surface area, and is promptly as shown in Figure 1.
Then,,, be made in a transparent substrates, form two-dimensional grid gage 2 through mesh lines with n * n array for subsequent detection is convenient.Specifically, the manufacturing approach of the two-dimensional grid gage 2 that the present invention adopted is in the darkroom, to utilize optical plotter to draw at film egative film middle position.Afterwards, will pass through that light paints that the film egative film of operation develops, photographic fixing is handled.During this period, development, stop bath are the common soup body in market.Through rayed, the crystal that light drawing shape zone has changed structure can become atrament and remain, and is not changed its structure by the crystal in rayed zone, in fixing, is rinsed out by stop bath, becomes transparent part, constitutes two-dimensional grid gage 2.
Afterwards, two-dimensional grid gage 2 is affixed on quasi-monocrystalline silicon sheet 1 surface.During this period, peripheral four edge lines of mesh lines of adjustment two-dimensional grid gage 2 let two-dimensional grid gage 2 overlap with quasi-monocrystalline silicon sheet 1 edge.Like this, reduce unnecessary detection error.
Subsequently, see through the transparent substrates silicon chip surface observation of two-dimensional grid gage 2, find out the position distribution of single grain on the silicon chip, poly grains.Immediately, count the number of grid that single grain, poly grains occupy.
At last, the number of grid that single grain is occupied is taken advantage of 1/ (n * n), be the ratio that single grain accounts for the whole silicon wafer area.The number of grid that poly grains occupies is taken advantage of 1/ (n * n), be the ratio that poly grains accounts for whole quasi-monocrystalline silicon sheet 1 area.
With regard to the present invention's one preferred implementation, consider the facility of follow-up statistics, the concrete data of n can get 3,5,6,7,8,9,10,11,12,13.
Further, consider that the sharpness of grid dividing is guaranteed, the mesh lines live width is 10um to 156um, and transparent substrate thickness is 5um to 200um.And, contrast experiment repeatedly just, in order to satisfy the fast detecting demand of existing streamline, the mesh lines live width that the present invention adopts is 50um, transparent substrate thickness is 50um.And the color of mesh lines is good with dark color, differing from quasi-monocrystalline silicon sheet sheet surface primary colors, as: black, redness, blueness etc.
Can find out through above-mentioned character express, adopt the present invention after, implement simple and easy, through statistical computation intuitively, can draw the ratio that single grain, poly grains occupy quasi-monocrystalline silicon sheet area, can estimate the quasi-monocrystalline silicon tablet quality fast.And, rely on the existence of two-dimensional grid gage, can improve the accuracy rate of detection, be easy to promote.
Claims (5)
1. the appearance detecting method of quasi-monocrystalline silicon sheet is characterized in that may further comprise the steps:
1. step is divided into the grid of n * n array with quasi-monocrystalline silicon sheet surface area, makes each grid area account for 1/ (n * n) of whole quasi-monocrystalline silicon sheet area;
2. step with n * n array, is made in a transparent substrates through mesh lines, forms the two-dimensional grid gage;
3. step is affixed on quasi-monocrystalline silicon sheet surface with the two-dimensional grid gage;
4. step adjusts peripheral four edge lines of mesh lines of two-dimensional grid gage, to overlap with the silicon chip edge;
5. step sees through the transparent substrates silicon chip surface observation of two-dimensional grid gage, finds out the position distribution of single grain on the silicon chip, poly grains, and counts the number of grid that single grain, poly grains occupy;
Step 6., the number of grid that single grain is occupied takes advantage of 1/, and (n * n), be the ratio that single grain accounts for the whole silicon wafer area takes advantage of 1/ (n * n), be the ratio that poly grains accounts for whole quasi-monocrystalline silicon sheet area with the number of grid that poly grains occupies.
2. the appearance detecting method of quasi-monocrystalline silicon sheet according to claim 1 is characterized in that: described n=3,5,6,7,8,9,10,11,12,13.
3. the appearance detecting method of quasi-monocrystalline silicon sheet according to claim 1; It is characterized in that: the manufacturing approach of described two-dimensional grid gage does; In the darkroom, utilize optical plotter to draw, will pass through light and paint that the film egative film of operation develops, photographic fixing is handled, make light drawing shape zone remain at film egative film middle position; Do not become transparent part, constitute the two-dimensional grid gage by the rayed zone.
4. the appearance detecting method of quasi-monocrystalline silicon sheet according to claim 1 is characterized in that: described mesh lines live width is 10um to 156um, and transparent substrate thickness is 5um to 200um.
5. the appearance detecting method of quasi-monocrystalline silicon sheet according to claim 4 is characterized in that: described mesh lines live width is 50um, and transparent substrate thickness is 50um.
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| CN2011104015750A CN102466646A (en) | 2011-12-07 | 2011-12-07 | Appearance detection method of quasi-monocrystalline silicon wafer |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103075996A (en) * | 2013-02-25 | 2013-05-01 | 李中平 | Globe longitude and latitude detector |
| CN105785251A (en) * | 2014-12-23 | 2016-07-20 | 浙江昱辉阳光能源有限公司 | Minority carrier lifetime detection method for silicon blocks |
| CN107655442A (en) * | 2017-08-28 | 2018-02-02 | 广东出入境检验检疫局检验检疫技术中心 | A kind of device for determining irregular food contact material and product into contact area and preparation method thereof and application |
| CN110889823A (en) * | 2019-10-08 | 2020-03-17 | 山东天岳先进材料科技有限公司 | SiC defect detection method and system |
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2011
- 2011-12-07 CN CN2011104015750A patent/CN102466646A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103075996A (en) * | 2013-02-25 | 2013-05-01 | 李中平 | Globe longitude and latitude detector |
| CN105785251A (en) * | 2014-12-23 | 2016-07-20 | 浙江昱辉阳光能源有限公司 | Minority carrier lifetime detection method for silicon blocks |
| CN105785251B (en) * | 2014-12-23 | 2018-05-25 | 浙江昱辉阳光能源有限公司 | A kind of minority carrier life time detection method of silico briquette |
| CN107655442A (en) * | 2017-08-28 | 2018-02-02 | 广东出入境检验检疫局检验检疫技术中心 | A kind of device for determining irregular food contact material and product into contact area and preparation method thereof and application |
| CN110889823A (en) * | 2019-10-08 | 2020-03-17 | 山东天岳先进材料科技有限公司 | SiC defect detection method and system |
| CN110889823B (en) * | 2019-10-08 | 2022-08-26 | 山东天岳先进科技股份有限公司 | SiC defect detection method and system |
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Owner name: ZHONGLI TENGHUI PHOTOVOLTAIC TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: JIANGSU TENGHUI ELECTRIC POWER TECHNOLOGY CO., LTD. Effective date: 20120418 |
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Effective date of registration: 20120418 Address after: 215542 No. 1 Teng Hui Road, Sha Chang Industrial Park, Jiangsu, Changshou City Province Applicant after: Zhongli Talesun Solar Technology Co., Ltd. Address before: 215542 No. 1 Teng Hui Road, Sha Chang Industrial Park, Jiangsu, Changshou City Province Applicant before: Jiangsu Tenghui Electric Power Technology Co., Ltd. |
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