CN203950814U

CN203950814U - A kind of new structure of semiconductor diode

Info

Publication number: CN203950814U
Application number: CN201420302897.9U
Authority: CN
Inventors: 肖乾
Original assignee: QINGDAO SI-TECH MICROELECTRONICS Co Ltd
Current assignee: QINGDAO SI-TECH MICROELECTRONICS Co Ltd
Priority date: 2014-06-09
Filing date: 2014-06-09
Publication date: 2014-11-19
Anticipated expiration: 2024-06-09

Abstract

The utility model relates to electronic information technical field, and particularly a kind of new structure of semiconductor diode comprises the P type utmost point, the N-type utmost point and PN junction, and PN junction is arranged between the P type utmost point and the N-type utmost point; Described PN junction is made up of several spills row and several convexs row, and spill row and convex row space are formed by connecting.In the time using the utility model, by the PN junction of planar shaped being become to the PN junction of multiple arcwall faces, thereby realize the object that has improved current density by increasing PN junction area.The utlity model has simple in structurely, arrange rationally, the advantage such as cost of manufacture is low.

Description

A kind of new structure of semiconductor diode

Technical field

The utility model relates to electronic information technical field, particularly a kind of new structure of semiconductor diode.

Background technology

Semiconductor diode is a kind of electronic devices and components with two electrodes, there is a PN junction being formed by P type semiconductor and N type semiconductor inside, only allow electric current to be flow through by single direction, be generally applied to current commutates aspect, can make alternating current become direct current.

Diode, by the size of electric current, depends on the area of the PN junction of inner P type semiconductor and N type semiconductor formation.Due to the restriction of cost, chip manufacture technique, encapsulation volume and cost, chip area can not infinitely strengthen.Therefore for power rectifier diode, be only improved the electric current handling capacity of unit chip area, the area that increases PN junction in the situation that chip area remains unchanged could be by larger electric current in the situation that keeping cost constant.The P type semiconductor of existing diode inside and the faying face of N type semiconductor are plane, the area of PN junction is identical with the area of chip, in order to adapt to the demand of every profession and trade, therefore be necessary the faying face structure of the inner PN junction of existing diode to carry out technological innovation further.

Utility model content

The purpose of this utility model is for the defect of prior art and deficiency, and a kind of new structure of simple in structure, reasonable in design, the semiconductor diode that is easy to production and processing is provided.

For achieving the above object, the technical solution adopted in the utility model is:

The new structure of a kind of semiconductor diode described in the utility model, comprises the P type utmost point, the N-type utmost point and PN junction, and PN junction is arranged between the P type utmost point and the N-type utmost point; Described PN junction is made up of several spills row and several convexs row, and spill row and convex row space are formed by connecting.

Adopt after said structure, the utility model beneficial effect is: the new structure of a kind of semiconductor diode described in the utility model, comprise the P type utmost point, the N-type utmost point and PN junction, and PN junction is arranged between the P type utmost point and the N-type utmost point; Described PN junction is made up of several spills row and several convexs row, and spill row and convex row space are formed by connecting.In the time using the utility model, by the PN junction of planar shaped being become to the PN junction of multiple cambered surface compositions, thereby realize the object that has improved current density by increasing PN junction area.The utlity model has simple in structurely, arrange rationally, the advantage such as cost of manufacture is low.

Brief description of the drawings

Fig. 1 is structural representation of the present utility model;

Fig. 2 is the stereogram of PN junction;

Fig. 3 is the structural representation of first reticle;

Fig. 4 is the structural representation of second reticle;

Description of reference numerals:

1, the P type utmost point; 2, the N-type utmost point; 3, PN junction; 3-1, spill row; 3-2, convex row;

41, first reticle; 42, second reticle.

Embodiment

Below in conjunction with accompanying drawing, the utility model is further described.

As shown in Figure 1-2, the new structure of a kind of semiconductor diode described in the utility model, comprises the P type utmost point 1, the N-type utmost point 2 and PN junction 3, and PN junction 3 is arranged between the P type utmost point 1 and the N-type utmost point 2; It is characterized in that: described PN junction 3 is made up of several spills row and several convexs row, spill row and convex row space are formed by connecting.

It should be noted that: the quantity of the spill row 3-1 in figure and convex row 3-2 runs far deeper than these, and this figure is only schematic diagram, can not illustrate that their quantity is thus much; Their quantity will be determined according to concrete product type.

The utility model production process is as follows:

The first step, designs two as the palisade reticle of Fig. 3, Fig. 4;

Second step, first selects first reticle 41 to make Implantation window, adopts the low-yield Implantation that completes; Then select second reticle 42 to make Implantation window, adopt high-energy to complete Implantation; Then repair implant damage active ions through High temperature diffusion.In order to reach good PN junction shape, also can adopt different energy to carry out repeatedly Implantation and complete.Other techniques are identical with conventional diode production technique.

In the time using the utility model, by the diode after this technique improvement, compared with conventional diode, under same chip area, electric current handling capacity can improve 20%-25%, thereby has realized the object that increases current density.In addition, this is simple in structure, reasonable in design, low cost of manufacture.

The above is only preferred embodiments of the present utility model, and the equivalence of doing according to structure, feature and principle described in the utility model patent claim therefore all changes or modifies, and is included in the utility model patent claim.

Claims

1. a new structure for semiconductor diode, comprises the P type utmost point (1), the N-type utmost point (2) and PN junction (3), and PN junction (3) is arranged between the P type utmost point (1) and the N-type utmost point (2); It is characterized in that: described PN junction (3) is made up of several spill rows (3-1) and several convexs row (3-2), spill row and convex row space are formed by connecting.