CN105359262B - 半导体装置的制造方法、半导体装置 - Google Patents
半导体装置的制造方法、半导体装置 Download PDFInfo
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- CN105359262B CN105359262B CN201380078021.9A CN201380078021A CN105359262B CN 105359262 B CN105359262 B CN 105359262B CN 201380078021 A CN201380078021 A CN 201380078021A CN 105359262 B CN105359262 B CN 105359262B
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Abstract
将半导体元件(14、16)固定于基板(12),将具有框体、信号端子(T4-T7)、宽度比该信号端子宽的主端子(T2、B5)、以及虚设端子(T1、T3、T8、T9、R1-R18、L1-L18、B 1-B4、B6-B8)的端子集合体的该信号端子和该主端子与该半导体元件电连接,形成该基板、该半导体元件、以及该端子集合体进行了一体化的被封装体。将在下模具形成的多个块体与该信号端子、该主端子、以及该虚设端子以无间隙的方式啮合,将该被封装体载置于该下模具。然后,将上模具的下表面无间隙地重叠在该多个块体的上表面、该信号端子的上表面、该主端子的上表面、以及该虚设端子的上表面,形成对该基板和该半导体元件进行收容的空腔,将模塑树脂注入至该空腔。
Description
技术领域
本发明涉及一种在例如大电流的通断等中使用的半导体装置的制造方法、以及使用该方法制造的半导体装置。
背景技术
专利文献1中公开了在具有多个引线(端子)和虚设引线(虚设端子)的引线框搭载有半导体元件。将该引线框设置于模具后,使用模塑树脂进行封装。
专利文献1:日本特开2006-173649号公报
发明内容
处理大电流的半导体装置具备使主电流流过的主端子、以及对控制信号进行传输的信号端子。这些端子在一方与模塑树脂的内部的半导体元件连接,另一方延伸至模塑树脂的外部。在模塑树脂的形成中使用的模具需要具有与这些端子的配置相对应的形状。并且,针对半导体装置的每个品种,主端子和信号端子的配置不同,因而存在半导体装置的每个品种都需要模具的问题。如果针对半导体装置的每个品种准备不同的模具,则成本变高。而且,模具的更换需要时间,因而生产效率降低。
本发明就是为了解决上述问题而提出的,其目的在于提供一种半导体装置的制造方法、以及使用该方法制造的半导体装置,在该半导体装置的制造方法中,能够使用一个模具进行多个品种的半导体装置的树脂封装。
本发明所涉及的半导体装置的制造方法的特征在于,具备下述工序:将半导体元件固定于基板;将具有框体、信号端子、主端子、以及虚设端子的端子集合体的该信号端子和该主端子与该半导体元件电连接,形成该基板、该半导体元件、以及该端子集合体进行了一体化的被封装体,其中,该信号端子与该框体的内侧连接,该主端子与该框体的内侧连接并且宽度比该信号端子宽,该虚设端子与该框体的内侧连接;搭载工序,在该工序中,将在下模具形成的多个块体与该信号端子、该主端子、以及该虚设端子以无间隙的方式啮合,将该被封装体载置于该下模具;在该搭载工序之后,将上模具的下表面无间隙地重叠在该多个块体的上表面、该信号端子的上表面、该主端子的上表面、以及该虚设端子的上表面,形成对该基板和该半导体元件进行收容的空腔;以及模塑工序,在该工序中,将模塑树脂注入至该空腔。
本发明所涉及的半导体装置的特征在于,具备:基板;半导体元件,其固定于该基板;信号端子,其传输对该半导体元件的通断进行切换的信号;主端子,其以比该信号端子粗的宽度形成,流过该半导体元件的主电流;虚设端子,其不与该半导体元件电连接;以及模塑树脂,其以使该信号端子、该主端子、以及该虚设端子的一部分露出至外部的方式对该半导体元件和该基板进行覆盖。
本发明的其它特征在下面变得清楚。
发明的效果
根据本发明,能够使用一个模具,对端子排列不同的多个品种的半导体装置进行树脂封装。
附图说明
图1是本发明的实施方式1所涉及的半导体装置的俯视图。
图2是表示图1的模塑树脂的内部的俯视图。
图3是沿图2的III-III’线的半导体装置的剖视图。
图4是表示在基板固定了半导体元件的俯视图。
图5是端子集合体的俯视图。
图6是表示对基板以及半导体元件固定了端子集合体的俯视图。
图7是下模具的斜视图。
图8是下模具的俯视图。
图9是上模具的俯视图。
图10是将下模具和上模具重叠并合模时的它们的剖视图。
图11是图8的E-E’线处的剖视图。
图12是表示在下模具搭载了被封装体的俯视图。
图13是放大了图12的一部分的斜视图。
图14是合模后的被封装体、下模具、以及上模具的剖视图。
图15是图12的J-J’线处的剖视图。
图16是由模塑树脂进行了封装的被封装体的俯视图。
图17是将端子弯折后的半导体装置的斜视图。
图18是端子集合体的俯视图。
图19是表示对基板以及半导体元件固定了端子集合体的俯视图。
图20是由模塑树脂进行了封装的被封装体的俯视图。
图21是切去工序后的半导体装置的俯视图。
图22是半导体装置的俯视图。
图23是变形例所涉及的半导体装置的剖视图。
图24是其它变形例所涉及的半导体装置的剖视图。
图25是本发明的实施方式2所涉及的半导体装置的俯视图。
图26是变形例所涉及的半导体装置的俯视图。
图27是本发明的实施方式3所涉及的半导体装置的俯视图。
图28是变形例所涉及的半导体装置的俯视图。
图29是本发明的实施方式4所涉及的半导体装置的斜视图。
图30是变形例所涉及的半导体装置的斜视图。
图31是本发明的实施方式5所涉及的半导体装置的斜视图。
图32是变形例所涉及的半导体装置的斜视图。
图33是其它变形例所涉及的半导体装置的斜视图。
图34是本发明的实施方式6所涉及的半导体装置的斜视图。
图35是本发明的实施方式7所涉及的半导体装置的俯视图。
图36是变形例所涉及的半导体装置的斜视图。
图37是本发明的实施方式8所涉及的半导体装置的俯视图。
图38是表示在本发明的实施方式8中使用的下模具的一部分的斜视图。
图39是变形例所涉及的半导体装置的俯视图。
图40是本发明的实施方式9所涉及的半导体装置的斜视图。
图41是变形例所涉及的半导体装置的斜视图。
图42是本发明的实施方式10所涉及的半导体装置的俯视图。
图43是本发明的实施方式11所涉及的半导体装置的俯视图。
图44是本发明的实施方式12所涉及的半导体装置的俯视图。
图45是本发明的实施方式13所涉及的半导体装置的俯视图。
图46是变形例所涉及的半导体装置的俯视图。
图47是本发明的实施方式14所涉及的半导体装置的斜视图。
具体实施方式
参照附图说明本发明的实施方式所涉及的半导体装置的制造方法和半导体装置。对相同或相对应的结构要素标注相同的标号,有时省略重复的说明。
实施方式1
图1是本发明的实施方式1所涉及的半导体装置10的俯视图。半导体装置10具备模塑树脂11。模塑树脂11在俯视观察时为四边形。端子T1-T9从模塑树脂11的上侧露出至外部。端子R1-R18从模塑树脂11的右侧露出至外部。端子L1-L18从模塑树脂11的左侧露出至外部。端子B1-B8从模塑树脂11的下侧露出至外部。如上述所示,端子从模塑树脂11的所有侧面露出至外部。
图2是表示图1的模塑树脂11的内部的俯视图。在图2中,为了表示模塑树脂11的内部,省略了模塑树脂11的一部分。在后面的图中,有时与图2同样,也省略模塑树脂11的一部分。在模塑树脂11的内部,具有作为散热器起作用的基板12。基板12由例如金属等导电性材料形成。半导体元件14、16固定于基板12。半导体元件14是在正面具备栅极14a和发射极14b,在背面具备与基板12连接的集电极的IGBT芯片。半导体元件16是在正面具备正极16a,在背面具备与基板12连接的负极的二极管芯片。半导体元件14、16和基板12由模塑树脂11覆盖,因此位于半导体装置10的中央。
端子T2、B5是使半导体元件14、16的主电流流过的主端子。主端子T2例如利用焊料固定于基板12。主端子T2经由基板12与半导体元件14的集电极以及半导体元件16的负极连接。主端子B5例如利用焊料固定于发射极14b以及正极16a。
端子T4、T5、T6、T7是传输对半导体元件14的通断进行切换的信号的信号端子。信号端子T4、T5、T6、T7通过金属导线50与栅极14a连接。
端子T1、T3、T8、T9、R1-R18、L1-L18、B1-B4、B6-B8是不与半导体元件14、16电连接的虚设端子。主端子、信号端子、以及虚设端子的一部分从模塑树脂11露出至外部。主端子T2、B5以比信号端子以及虚设端子粗的宽度形成。在主端子T2,形成有3个开口。在主端子B5,形成有4个开口。信号端子与虚设端子的宽度相等。
图3是沿图2的III-III’线的半导体装置10的剖视图。半导体元件14的集电极14c利用焊料60固定于基板12。发射极14b利用焊料62固定于主端子B5。半导体元件16的负极16b利用焊料64固定于基板12。正极16a利用焊料66固定于主端子B5。此外,它们的固定也可以不利用焊料,而利用导电性粘合剂。
基板12的一部分(背面)从模塑树脂11露出至外部。此外,在基板12与半导体元件14之间、以及基板12与半导体元件16之间,也可以设置陶瓷基板。
对本发明的实施方式1所涉及的半导体装置10的制造方法进行说明。首先,使用焊料将半导体元件14、16固定于基板12。图4是表示在基板12固定了半导体元件14、16的俯视图。接着,对基板12以及半导体元件14、16,将端子集合体进行固定。图5是端子集合体70的俯视图。端子集合体70具备框体72。在框体72的内侧,连接有主端子T2、B5、信号端子T4-T7、以及虚设端子T1、T3、T8、T9、R1-R18、L1-L18、B1-B4、B6-B8。
图6是表示对基板12以及半导体元件14、16固定了端子集合体70的俯视图。在该工序中,利用金属导线50将信号端子T4-T7与栅极14a进行连接。此外,利用焊料,将主端子T2与基板12连接,将主端子B5与发射极14b以及正极16a连接。如上述所示,将信号端子T4-T7、主端子T2、B5与半导体元件14、16电连接,形成基板12、半导体元件14、16、以及端子集合体70进行了一体化的被封装体74。
下面,对下模具进行说明。图7是下模具100的斜视图。下模具100具有第1面102、比第1面102低一层的面即第2面104、以及比第2面104低一层的面即第3面106。第2面104以包围第3面106的方式形成。第1面102以包围第2面104的方式形成。
第2面104与第3面106的边界在俯视观察时为四边形。在第2面104,沿该边界形成有多个块体。即,在第2面104,沿与第3面106之间的边界的四边形的各边,分别形成有块体TB1-TB11、块体RB1-RB17、块体LB1-LB17、以及块体BB1-BB11。另外,以与该四边形的边界的角相接触的方式形成有块体CB1-CB4。块体间空间(指某个块体和与该块体相邻的块体之间的空间)全部相等。
有时将块体TB1-TB11、块体RB1-RB17、块体LB1-LB17、块体BB1-BB11、以及块体CB1-CB4总称为“多个块体”。多个块体的上表面和第1面102成为相同高度的面。
图8是下模具100的俯视图。图9是上模具150的俯视图。上模具150具备第1面152、以及比第1面152低一层的面即第2面154。第2面154的形状以及面积与下模具100的第3面106的形状以及面积一致。
图10是将下模具100和上模具150重叠并合模时的它们的剖视图。图10A是图8的A-A’线处的剖视图。在下模具100的第2面104与上模具150之间具有空隙。图10B是图8的B-B’线处的剖视图。由于具有块体C1、LB、C2,所以在下模具100与上模具150之间形成有梳齿状的空隙160。
图10C是图8的C-C’线处的剖视图。C-C’线是通过块体的线。在下模具100的第3面106与上模具150的第2面154之间形成有空腔170。图10D是图8的D-D’线处的剖视图。D-D’线是不通过块体的线。块体间空间162与下模具100的第3面106和上模具150的第2面154之间的空腔170连通。
图11是图8的E-E’线处的剖视图。E-E’线是不通过块体的线。块体间空间164与下模具100的第3面106和上模具150的第2面154之间的空腔170连通。此外,在图10、11中,为了便于说明,对下模具100和上模具150绘有图案。
在上述的下模具100搭载被封装体74。将该工序称为搭载工序。图12是表示在下模具100搭载了被封装体74的俯视图。在搭载工序中,将被封装体74载置于下模具100,使在下模具100形成的多个块体与主端子、信号端子、以及虚设端子以无间隙的方式啮合。图13是放大了图12的块体TB、C1、C4和端子T的斜视图。在主端子T2的3个开口,收容有3个块体TB2-TB4。
这样,下模具100的所有的块体间空间由端子集合体70的主端子、信号端子、或者虚设端子填埋。例如,在由块体C1、TB、C4形成的12个块体间空间中,8个块体间空间由端子T1、T3-T9填埋,4个块体间空间由主端子T2填埋。主端子T2之所以能够填埋4个块体间空间,是由于将块体TB2-TB4收容于主端子T2的3个开口。
由块体C4、RB、C3形成的18个块体间空间由端子R1-R18填埋。由块体C1、LB、C2形成的18个块体间空间由端子L1-L18填埋。在由块体C2、B、C3形成的12个块体间空间中,7个块体间空间由端子B1-B4、B6-B8填埋,5个块体间空间由端子B5填埋。主端子B5之所以能够填埋5个块体间空间,是由于将块体BB5-BB8收容于主端子B5的4个开口。
在搭载工序之后,主端子、信号端子及虚设端子的上表面、多个块体的上表面、以及第1面102成为相同高度的面。将主端子、信号端子及虚设端子的上表面、多个块体的上表面、以及第1面102总称为接触面。
接着,使用下模具100和上模具150进行合模。将该工序称为合模工序。在合模工序中,使上模具150的第1面152与接触面接触。图14是合模后的被封装体74、下模具100、以及上模具150的剖视图。图14A是图12的F-F’线处的剖视图。在下模具100的第2面104与上模具150之间的空隙处,具有端子L。图14B是图12的G-G’线处的剖视图。G-G’线是通过块体LB的线。块体间空间由端子L填埋。
图14C是图12的H-H’线处的剖视图。H-H’线是通过块体的线。基板12、以及半导体元件14、16等收容于空腔170。图14D是图12的I-I’线处的剖视图。I-I’线是不通过块体的线。块体间空间(图10D的块体间空间162)由端子T5、B5填埋。
图15是图12的J-J’线处的剖视图。J-J’线是不通过块体的线。块体间空间(图11的块体间空间164)由端子L14、R14填埋。在合模工序中,将上模具150的下表面(第1面152)无间隙地重叠在多个块体的上表面、主端子的上表面、信号端子的上表面、以及虚设端子的上表面,形成空腔170。
接着,向空腔170注入模塑树脂。将该工序称为模塑工序。在模塑工序之后,从模具中取出由模塑树脂进行了封装的被封装体74。图16是由模塑树脂11进行了封装的被封装体74的俯视图。在图16中,为了看清楚模塑树脂11的内部,省略了模塑树脂11的一部分。所有端子具备由模塑树脂11覆盖的部分和延伸至模塑树脂11之外的部分。
接着,从主端子、信号端子、以及虚设端子将框体切去。将该工序称为切去工序。通过切去图16的框体72,从而完成图1、2所示的半导体装置10。此外,如图17所示,也可以适当地将端子弯折。
根据本发明,能够使用一个模具(下模具100和上模具150)对端子排列不同的多个品种的半导体装置进行树脂封装。对以下情况进行说明,即,使用下模具100和上模具150对端子配置与半导体装置10不同的半导体装置进行树脂封装。图18是表示具有与图5的端子集合体70不同的端子配置的端子集合体180的俯视图。在框体182的内侧,连接有端子T、R、L、B。
端子T2、R6、L11、B5是主端子。在主端子T2,形成有3个开口。在主端子R6,形成有3个开口。在主端子B5,形成有4个开口。主端子R6和主端子B5连接而成为一个主端子。在主端子L11,形成有3个开口。端子T5-T7、L5是信号端子。其他端子是虚设端子。
图19是表示对基板12以及半导体元件14、16固定了端子集合体180的俯视图。通过将端子集合体180固定于半导体元件14、16,从而完成被封装体184。然后,实施搭载工序。在搭载工序中,将被封装体184载置于下模具100,使在下模具100形成的多个块体与主端子、信号端子、以及虚设端子以无间隙的方式啮合。
这样,下模具100的所有的块体间空间由端子集合体180的主端子、信号端子、或者虚设端子填埋。然后,通过实施合模工序和模塑工序,从而得到图20的构造。最后,实施切去工序,完成图21的半导体装置。
在图5的端子集合体70与图18的端子集合体180中,主端子和信号端子的排列不同。但是,通过在端子集合体70、180形成虚设端子,从而使端子集合体70与端子集合体180的端子排列一致。因此,能够将它们搭载于同一下模具100。
当然,关于在与端子集合体70、180不同的位置处具备主端子和信号端子的端子集合体,也能够通过以由端子对下模具100的所有块体间空间进行填埋的方式附加虚设端子,从而搭载于下模具100。因此,能够通过仅仅改变端子集合体的端子排列,而利用一个模具进行多个品种的半导体装置的树脂封装。
例如,图22所示的半导体装置是由下模具100和上模具150进行了树脂封装的半导体装置。具有5个开口的主端子T1在搭载工序中填埋6个块体间空间。另外,具有6个开口的主端子B4在搭载工序中填埋7个块体间空间。通过如上述所示加大主端子的宽度,从而能够降低主端子的电流密度。
本发明的实施方式1所涉及的主端子具有开口,在搭载工序中将多个块体中的至少一个块体收容于该开口。通过在主端子形成开口,从而能够在多个品种间共享模具,并且加大主端子的宽度。由此,例如能够制造在主端子中使大于或等于几十~几百A的主电流流过的半导体装置。此外,只要以填埋所有块体间空间的方式设置主端子、信号端子、以及虚设端子,能够任意地变更端子的排列。
本发明的实施方式1所涉及的半导体装置的制造方法和半导体装置,在不脱离本发明范围的范围内能够进行各种变形。例如,半导体元件14、16的背面侧的构造能够进行各种变形。图23、24是变形例所涉及的半导体装置的剖视图。在图23中公开了在基板12的背面隔着绝缘片190形成有金属膜192的半导体装置。在图24中公开了在绝缘基板194的两面形成有金属膜196、198的半导体装置。在本发明的实施方式1中,作为半导体元件,使用了IGBT芯片和二极管芯片,但也可以使用例如MOSFET芯片等半导体元件。此外,这些变形也能够应用于下面的实施方式所涉及的半导体装置的制造方法和半导体装置。
对于下面的实施方式所涉及的半导体装置的制造方法和半导体装置,以与实施方式1的不同点为中心进行说明。
实施方式2
图25是表示本发明的实施方式2所涉及的半导体装置的模塑树脂11内部的俯视图。在模塑树脂11的内部,形成有对半导体元件14进行控制的控制IC 200。控制IC 200固定于基板202。信号端子T2-T12、L3、L4使用金属导线与控制IC 200连接。控制IC 200使用金属导线与栅极14a连接。
端子B5、B7、R18是主端子。在主端子B5,形成有4个开口。将主端子B7、R18进行连接。在主端子B7、R18,形成有2个开口。在搭载工序中,在主端子B7、R18的左侧的开口收容块体BB11,在右侧的开口收容块体C3。端子T1、R1-R17、L1、L2、L5-L18、B1-B4、B6是虚设端子。
本发明的实施方式2所涉及的半导体装置能够使用与实施方式1的半导体装置的制造方法相同的工序进行制造。即,在搭载工序中,下模具100的所有块体间空间由前述的主端子、信号端子、或者虚设端子进行填埋。由此,能够利用在实施方式1中说明的下模具100和上模具150。
图26是变形例所涉及的半导体装置的俯视图。在模塑树脂11的内部,具有将控制IC 200和半导体元件14进行连接的栅极电阻210。栅极电阻210在信号端子R4的一部分处形成。栅极电阻210在控制IC 200与半导体元件14之间形成。一个栅极14a经由栅极电阻210与控制IC 200进行金属导线连接。
通过设置信号端子R4和栅极电阻210,从而使半导体装置的评价变得容易。即,通过变更栅极电阻210的规格,从而能够调整栅极电阻。另外,能够从信号端子R4向栅极14a直接输入栅极信号。此外,也可以在端子处安装热敏电阻器等部件而进行半导体装置的评价。
实施方式3
图27是表示本发明的实施方式3所涉及的半导体装置的模塑树脂11内部的俯视图。发射极14b和正极16a使用金属导线220进行连接。正极16a和主端子B5使用金属导线222进行连接。根据本发明的实施方式3所涉及的半导体装置,能够通过金属导线将端子和半导体元件进行电连接。
图28是变形例所涉及的半导体装置的俯视图。信号端子T3-T6和栅极14a通过4根中继端子224进行连接。4根中继端子224例如利用超声波接合或导电性粘合剂与端子T3-T6及栅极14a连接。
实施方式4
图29是本发明的实施方式4所涉及的半导体装置的斜视图。在模塑树脂11的外侧,配置有外部基板230。虚设端子T1-T16、R13、L13贯穿外部基板230,并且利用钎焊或焊接而固定于外部基板230。外部基板230例如是控制基板或散热片。
图29的半导体装置能够通过在切去工序之后,实施将虚设端子T1-T16、R13、L13固定于外部基板230的固定工序而进行制造。如上述所示,通过将虚设端子用于与外部基板230的连接,从而能够省略用于将它们进行连接的部件。图30是变形例所涉及的半导体装置的斜视图。在模塑树脂11的下方,配置有外部基板232。虚设端子R1、R9、L9贯穿外部基板232,并且固定于外部基板232。
实施方式5
图31是本发明的实施方式5所涉及的半导体装置的斜视图。多个虚设端子在模塑树脂11的外部具有板状部R、L。板状部R是由从模塑树脂11的右侧面露出的所有虚设端子集束而形成的。板状部L是由从模塑树脂11的左侧面露出的所有虚设端子集束而形成的。
在板状部R、L和外部基板240,形成有贯穿孔Ra、La。从该贯穿孔Ra、La的上下将螺栓和螺母进行紧固,将板状部R、L固定于外部基板240。该半导体装置能够通过在切去工序之后,实施将板状部R、L固定于外部基板240的固定工序而进行制造。如上述所示,能够使虚设端子为板状而用于与外部基板240的连接。
图32是变形例所涉及的半导体装置的斜视图。板状部R使用粘合剂242固定于外部基板244。板状部L使用粘合剂246固定于外部基板244。也可以使用脂状物代替粘合剂。图31、32的板状部R、L在用于与外部基板的连接的同时,作为散热片起作用。此外,不仅虚设端子,还可以使主端子或信号端子的形状为散热片形状。
图33是其他变形例所涉及的半导体装置的斜视图。从模塑树脂11的右侧面露出的虚设端子具备与板状部R连接的压入配合端子250。从模塑树脂11的左侧面露出的虚设端子具备与板状部L连接的压入配合端子252。压入配合端子250、252***至外部基板254的开口254a、254b,与外部基板254进行压入配合连接。如上述所示,通过在虚设端子设置压入配合端子250、252,从而使得与外部基板254的连接变容易。
实施方式6
图34是本发明的实施方式6所涉及的半导体装置的斜视图。该半导体装置的特征是多个虚设端子在模塑树脂的外部形成板弹簧。从模塑树脂11的右侧面露出的所有虚设端子集束而形成板弹簧R。从模塑树脂11的左侧面露出的所有虚设端子集束而形成板弹簧L。
对该半导体装置的制造方法进行说明。该半导体装置的虚设端子在模塑树脂的外部具有板状部。并且,在切去工序之后,实施将板状部弯折而使板状部成为板弹簧R、L的工序。利用板弹簧R、L,在将半导体装置向散热片等外部基板进行安装时能够施加一定的载荷,能够提高半导体装置的安装性。此外,也可以代替板弹簧,形成碟形弹簧。
实施方式7
图35是本发明的实施方式7所涉及的半导体装置的俯视图。在虚设端子R1、R18、L1、L18的一部分,分别形成有衬套270、272、274、276。利用衬套270、272、274、276,形成上下贯通半导体装置的4个贯穿孔。衬套270、272、274、276是用于将半导体装置嵌入轴或筒状部件等的构件。
图36是变形例所涉及的半导体装置的斜视图。在虚设端子R1、R13、L1、L13的一部分处分别形成的衬套280、282、284、286,载置于模塑树脂11之上。即,衬套既可以在模塑树脂中形成,也可以在模塑树脂外形成。
实施方式8
图37是本发明的实施方式8所涉及的半导体装置的俯视图。主端子T2、B5不具有开口。因此,在下模具的块体间空间中,需要使收容主端子T2、T5的块体间空间的宽度大于收容信号端子或虚设端子的块体间空间的宽度。因此,实施方式1-7所涉及的半导体装置能够使用一个模具(下模具100和上模具150)制造,但实施方式8所涉及的半导体装置需要使用与该模具不同的模具制造。
图38是表示在本发明的实施方式8中使用的下模具的一部分的斜视图。块体TB1与块体TB2之间的块体间空间的宽度形成得大于其他块体间空间的宽度。在搭载工序中,在块体TB1与块体TB2之间的块体间空间,收容端子集合体290的主端子T2。
本发明的实施方式8所涉及的半导体装置在主端子T2、B5不具有开口,因而能够在主端子整体维持较宽的宽度。由此,能够降低主端子T2、B5的电流密度。另外,能够利用在本发明的实施方式8中使用的模具,制造具有与图37的半导体装置的端子排列不同的端子排列的其他品种的半导体装置。在此情况下,既可以使主端子的位置与图37的主端子T2、B5的位置一致,也可以采用实施方式1的具有开口的主端子,在图37的主端子T2、B5的位置设置宽度较宽的虚设端子。
图39是变形例所涉及的半导体装置的俯视图。作为虚设端子,具备第1虚设端子R1-R3、R5、R6、R8、R9、R11、R12、L1-L3、L5、L6、L8、L9、L11、L12、B1,以及宽度比第1虚设端子宽的第2虚设端子T1、T7、R4、R7、R10、L4、L7、L10、B2、B4。
在搭载工序中,将第1虚设端子收容于宽度较窄的块体间空间,第2虚设端子收容于宽度较宽的块体间空间。能够通过在形成了第2虚设端子的部分处形成主端子,从而提供宽度较宽并且不具有开口的主端子。例如,越是电流容量高的品种,越增加将第2虚设端子置换为主端子的置换数,与多个品种相对应。此外,图39的半导体装置的主端子T2、B3具有开口,但也可以使它们是不具有开口的主端子。
实施方式9
图40是本发明的实施方式9所涉及的半导体装置的斜视图。端子300从模塑树脂11的上表面露出至外部。端子300是主端子、信号端子、或者虚设端子。为了设置端子300,在上模具的第2面154形成与端子300相对应的孔。此外,也可以使端子300从模塑树脂11的下表面露出至外部。
如上述所示,可以将端子从模塑树脂11的任一面引出。图41是变形例所涉及的半导体装置的斜视图。该半导体装置仅从模塑树脂11的2个侧面引出端子。
实施方式10
图42是本发明的实施方式10所涉及的半导体装置的俯视图。主端子B3具有开口,在形成了开口的部分处宽度达到最大。即,主端子B3的形成了开口的部分的宽度X1大于未形成开口的部分的宽度X2。根据本发明的实施方式10所涉及的半导体装置,主端子B3的形成了开口的部分与未形成开口的部分相比宽度较宽,因而能够防止在形成了开口的部分处电流密度变高。
实施方式11
图43是本发明的实施方式11所涉及的半导体装置的俯视图。基板310具备追加主端子310a、以及与追加主端子310a连接的主体部310b。追加主端子310a从模塑树脂11的侧面露出至外部。在主体部310b固定有半导体元件14、16。追加主端子310a作为主端子起作用。
在追加主端子310a,形成有3个开口。在搭载工序中,将块体收容于这些开口。并且,在搭载工序中,追加主端子310a填埋4个块体间空间。如上述所示,通过在基板310的一部分形成作为主端子起作用的追加主端子310a,从而能够省略主端子与基板的连接。
此外,在追加主端子310a也可以不设置开口。在此情况下,追加主端子对宽度形成得较宽的块体间空间进行填埋。无论追加主端子有无开口,在搭载工序中,追加主端子都至少填埋1个块体间空间。
实施方式12
图44是本发明的实施方式12所涉及的半导体装置的俯视图。作为主端子,具备与半导体元件14、16的正面电极(发射极14b和正极16a)连接的第1端子B3、以及与半导体元件14、16的背面电极(集电极和负极)电连接的第2端子B5、R17。并且,在模塑树脂11的外部,电容器320将第1端子B3与第2端子B5、R17进行连接。能够利用电容器320应对PN间浪涌。
实施方式13
图45是本发明的实施方式13所涉及的半导体装置的俯视图。该半导体装置是六合一IGBT模块,其具有6桥臂的逆变桥。在基板400,形成有3个上桥臂。在基板402、404、406,分别形成有1个下桥臂。
图46是变形例所涉及的半导体装置的俯视图。该半导体装置是二合一IGBT模块,其具有2桥臂的逆变桥。图45的半导体装置和图46的半导体装置能够使用相同的模具进行制造。
实施方式14
图47是本发明的实施方式14所涉及的半导体装置的斜视图。模塑树脂11具有用于螺钉紧固等的安装用贯穿孔11a。通过设置安装用贯穿孔11a,能够将半导体装置容易地与外部连接。此外,也可以对至此为止的实施方式1-14所涉及的半导体装置的制造方法、以及半导体装置的特征进行适当组合。
标号的说明
10半导体装置,11模塑树脂,T1-T9、R1-R18、L1-L18、B1-B8端子,12基板,14、16半导体元件,14a栅极,14b发射极,14c集电极,16a正极,16b负极,50金属导线,70、180、290端子集合体,72、182框体,74、184被封装体,100下模具,102第1面,104第2面,106第3面,TB1-TB11、RB1-RB17、LB1-LB17、BB1-BB11、C1-C4块体,150上模具,152第1面,154第2面,160空隙,162、164块体间空间,170空腔,200控制IC,202基板,210栅极电阻,220、222金属导线,224中继端子,R、L板状部,230、232、240、244、254外部基板,250、252压入配合端子,270、272、274、276、280、282、284、286衬套,310基板,310a追加主端子,310b主体部,320电容器。
Claims (30)
1.一种半导体装置的制造方法,其特征在于,具备下述工序:
将半导体元件固定于基板;
将具有框体、信号端子、以及主端子的端子集合体的所述信号端子和所述主端子与所述半导体元件电连接,形成所述基板、所述半导体元件、以及所述端子集合体进行了一体化的被封装体,其中,该信号端子与所述框体的内侧连接,该主端子与所述框体的内侧连接并且宽度比所述信号端子宽,该主端子形成有开口;
搭载工序,在该工序中,将在下模具形成的多个块体与所述信号端子以及所述主端子以无间隙的方式啮合,将在形成于所述主端子的所述开口收容有所述多个块体中的至少1个块体的所述被封装体载置于所述下模具;
在所述搭载工序之后,将上模具的下表面无间隙地重叠在所述多个块体的上表面、所述信号端子的上表面、以及所述主端子的上表面,形成对所述基板和所述半导体元件进行收容的空腔;以及
模塑工序,在该工序中,将模塑树脂注入至所述空腔。
2.根据权利要求1所述的半导体装置的制造方法,其特征在于,
作为所述端子集合体的一部分,具有与所述框体的内侧连接的虚设端子。
3.根据权利要求1所述的半导体装置的制造方法,其特征在于,
所述主端子的形成了所述开口的部分的宽度与未形成所述开口的部分的宽度相比更大。
4.根据权利要求1所述的半导体装置的制造方法,其特征在于,
所述基板由导电性的材料形成,
所述基板具有追加主端子以及主体部,所述主体部与所述追加主端子连接,并且固定有所述半导体元件,
在所述搭载工序中,所述追加主端子对由所述多个块体形成的块体间空间中的至少1个块体间空间进行填埋,
所述追加主端子从所述模塑树脂的侧面露出至外部。
5.根据权利要求1、3、4中任一项所述的半导体装置的制造方法,其特征在于,
该半导体装置的制造方法在所述模塑工序之后具备切去工序,在该切去工序中,从所述信号端子以及所述主端子切去所述框体。
6.根据权利要求2所述的半导体装置的制造方法,其特征在于,
所述主端子的形成了所述开口的部分的宽度与未形成所述开口的部分的宽度相比更大。
7.根据权利要求2所述的半导体装置的制造方法,其特征在于,
所述基板由导电性的材料形成,
所述基板具有追加主端子以及主体部,所述主体部与所述追加主端子连接,并且固定有所述半导体元件,
在所述搭载工序中,所述追加主端子对由所述多个块体形成的块体间空间中的至少1个块体间空间进行填埋,
所述追加主端子从所述模塑树脂的侧面露出至外部。
8.根据权利要求2、6、7中任一项所述的半导体装置的制造方法,其特征在于,
该半导体装置的制造方法在所述模塑工序之后具备切去工序,在该切去工序中,从所述信号端子、所述主端子、以及所述虚设端子切去所述框体。
9.根据权利要求8所述的半导体装置的制造方法,其特征在于,
该半导体装置的制造方法在所述切去工序之后具备固定工序,在该固定工序中,将所述虚设端子固定于外部基板。
10.根据权利要求9所述的半导体装置的制造方法,其特征在于,
在所述固定工序中,所述虚设端子贯穿所述外部基板并且固定于所述外部基板。
11.根据权利要求9所述的半导体装置的制造方法,其特征在于,
所述虚设端子在所述模塑树脂的外部具有板状部,
在所述固定工序中,将所述板状部固定于所述外部基板。
12.根据权利要求9所述的半导体装置的制造方法,其特征在于,
所述虚设端子具有压入配合端子,
在所述固定工序中,将所述压入配合端子***至所述外部基板的开口。
13.根据权利要求8所述的半导体装置的制造方法,其特征在于,
所述虚设端子在所述模塑树脂的外部具有板状部,
该半导体装置的制造方法在所述切去工序之后,具备将所述板状部弯折而使所述板状部成为板弹簧或碟形弹簧的工序。
14.一种半导体装置,其特征在于,具备:
基板;
半导体元件,其固定于所述基板;
信号端子,其传输对所述半导体元件的通断进行切换的信号;
主端子,其以比所述信号端子粗的宽度形成,流过所述半导体元件的主电流;以及
模塑树脂,其以使所述信号端子以及所述主端子的一部分露出至外部的方式对所述半导体元件和所述基板进行覆盖,
所述主端子在所述模塑树脂的外侧具有开口,
所述开口的宽度是恒定的。
15.根据权利要求14所述的半导体装置,其特征在于,
作为所述半导体装置的端子,具备所述信号端子、所述主端子、以及与所述半导体元件不进行电连接的虚设端子。
16.根据权利要求14或15所述的半导体装置,其特征在于,
在所述模塑树脂的内部具备对所述半导体元件进行控制的控制IC。
17.根据权利要求16所述的半导体装置,其特征在于,
在所述模塑树脂的内部具备将所述控制IC和所述半导体元件进行连接的栅极电阻。
18.根据权利要求15所述的半导体装置,其特征在于,
具备外部基板,该外部基板配置在所述模塑树脂的外侧并固定于所述虚设端子。
19.根据权利要求18所述的半导体装置,其特征在于,
所述虚设端子贯穿所述外部基板并且固定于所述外部基板。
20.根据权利要求18所述的半导体装置,其特征在于,
所述虚设端子在所述模塑树脂的外部具有板状部,
所述板状部固定于所述外部基板。
21.根据权利要求18所述的半导体装置,其特征在于,
所述虚设端子具有压入配合端子,
所述压入配合端子***至所述外部基板的开口。
22.根据权利要求15所述的半导体装置,其特征在于,
所述虚设端子在所述模塑树脂的外部具有板弹簧或碟形弹簧。
23.根据权利要求15、18至22中任一项所述的半导体装置,其特征在于,
使所述虚设端子、所述主端子、或者所述信号端子的所述模塑树脂外部的形状为散热片形状。
24.根据权利要求15、18至22中任一项所述的半导体装置,其特征在于,
在所述虚设端子的一部分形成有衬套。
25.根据权利要求15、18至22中任一项所述的半导体装置,其特征在于,
所设虚设端子具备第1虚设端子、以及宽度比所述第1虚设端子宽的第2虚设端子。
26.根据权利要求15、18至22中任一项所述的半导体装置,其特征在于,
所述主端子、所述信号端子、或者所述虚设端子从所述模塑树脂的上表面或下表面露出至外部。
27.根据权利要求14、15、17至22中任一项所述的半导体装置,其特征在于,
所述主端子的形成了所述开口的部分的宽度与未形成所述开口的部分的宽度相比更大。
28.根据权利要求14、15、17至22中任一项所述的半导体装置,其特征在于,
所述基板由导电性的材料形成,
所述基板具有追加主端子和主体部,所述追加主端子从所述模塑树脂的侧面露出至外部,所述主体部与所述追加主端子连接,并且固定有所述半导体元件。
29.根据权利要求14、15、17至22中任一项所述的半导体装置,其特征在于,
所述主端子具备与所述半导体元件的正面电极连接的第1端子、以及与所述半导体元件的背面电极电连接的第2端子,
该半导体装置具备在所述模塑树脂的外部将所述第1端子与所述第2端子进行连接的电容器。
30.根据权利要求14、15、17至22中任一项所述的半导体装置,其特征在于,
所述模塑树脂具有安装用贯穿孔。
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JP2012142466A (ja) | 2011-01-04 | 2012-07-26 | Mitsubishi Electric Corp | 半導体装置 |
JP5701377B2 (ja) * | 2011-03-24 | 2015-04-15 | 三菱電機株式会社 | パワー半導体モジュール及びパワーユニット装置 |
JP5921491B2 (ja) * | 2013-06-13 | 2016-05-24 | 三菱電機株式会社 | 電力用半導体装置 |
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