CN104956470A - 半导体装置的制造方法以及制造装置 - Google Patents
半导体装置的制造方法以及制造装置 Download PDFInfo
- Publication number
- CN104956470A CN104956470A CN201480006560.6A CN201480006560A CN104956470A CN 104956470 A CN104956470 A CN 104956470A CN 201480006560 A CN201480006560 A CN 201480006560A CN 104956470 A CN104956470 A CN 104956470A
- Authority
- CN
- China
- Prior art keywords
- diaphragm seal
- semiconductor element
- semiconductor
- sealing
- semiconductor device
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 275
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 111
- 238000000034 method Methods 0.000 claims abstract description 113
- 238000007789 sealing Methods 0.000 claims abstract description 91
- 238000002360 preparation method Methods 0.000 claims abstract description 76
- 238000011084 recovery Methods 0.000 claims abstract description 12
- 238000009434 installation Methods 0.000 claims description 49
- 238000010438 heat treatment Methods 0.000 claims description 27
- 238000007493 shaping process Methods 0.000 claims description 19
- 238000009966 trimming Methods 0.000 claims description 17
- 238000005538 encapsulation Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 63
- 239000000565 sealant Substances 0.000 description 43
- 239000003463 adsorbent Substances 0.000 description 11
- 238000005520 cutting process Methods 0.000 description 11
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 239000008393 encapsulating agent Substances 0.000 description 7
- 238000013007 heat curing Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012216 screening Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 206010007247 Carbuncle Diseases 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 235000012222 talc Nutrition 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 235000010215 titanium dioxide Nutrition 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013014668 | 2013-01-29 | ||
JP2013-014668 | 2013-01-29 | ||
JP2013053628A JP2014168028A (ja) | 2013-01-29 | 2013-03-15 | 半導体装置の製造方法および製造装置 |
JP2013-053628 | 2013-03-15 | ||
PCT/JP2014/051232 WO2014119445A1 (ja) | 2013-01-29 | 2014-01-22 | 半導体装置の製造方法および製造装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN104956470A true CN104956470A (zh) | 2015-09-30 |
Family
ID=51262158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480006560.6A Pending CN104956470A (zh) | 2013-01-29 | 2014-01-22 | 半导体装置的制造方法以及制造装置 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP2014168028A (ja) |
KR (1) | KR20150111928A (ja) |
CN (1) | CN104956470A (ja) |
SG (1) | SG11201505565QA (ja) |
TW (1) | TW201438162A (ja) |
WO (1) | WO2014119445A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112621891A (zh) * | 2019-09-24 | 2021-04-09 | 泰州隆基乐叶光伏科技有限公司 | 导电金属箔冲压方法及冲压装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101383295A (zh) * | 2007-09-03 | 2009-03-11 | 日东电工株式会社 | 光学半导体装置的生产工艺和该工艺中使用的片 |
CN102347403A (zh) * | 2010-07-27 | 2012-02-08 | 日东电工株式会社 | 发光二极管装置的制造方法 |
US20120052608A1 (en) * | 2010-08-25 | 2012-03-01 | Yoo Cheol-Jun | Phosphor film, method of forming the same, and method of coating phosphor layer on led chips |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5242947B2 (ja) * | 2007-05-15 | 2013-07-24 | リンテック株式会社 | シート貼付装置及び貼付方法 |
JP5333056B2 (ja) * | 2009-08-26 | 2013-11-06 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP5156033B2 (ja) * | 2010-01-12 | 2013-03-06 | リンテック株式会社 | 樹脂封止型半導体装置の製造方法 |
US8823186B2 (en) * | 2010-12-27 | 2014-09-02 | Shin-Etsu Chemical Co., Ltd. | Fiber-containing resin substrate, sealed substrate having semiconductor device mounted thereon, sealed wafer having semiconductor device formed thereon, a semiconductor apparatus, and method for manufacturing semiconductor apparatus |
-
2013
- 2013-03-15 JP JP2013053628A patent/JP2014168028A/ja not_active Withdrawn
-
2014
- 2014-01-22 WO PCT/JP2014/051232 patent/WO2014119445A1/ja active Application Filing
- 2014-01-22 KR KR1020157020255A patent/KR20150111928A/ko not_active Application Discontinuation
- 2014-01-22 CN CN201480006560.6A patent/CN104956470A/zh active Pending
- 2014-01-22 SG SG11201505565QA patent/SG11201505565QA/en unknown
- 2014-01-28 TW TW103103160A patent/TW201438162A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101383295A (zh) * | 2007-09-03 | 2009-03-11 | 日东电工株式会社 | 光学半导体装置的生产工艺和该工艺中使用的片 |
CN102347403A (zh) * | 2010-07-27 | 2012-02-08 | 日东电工株式会社 | 发光二极管装置的制造方法 |
US20120052608A1 (en) * | 2010-08-25 | 2012-03-01 | Yoo Cheol-Jun | Phosphor film, method of forming the same, and method of coating phosphor layer on led chips |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112621891A (zh) * | 2019-09-24 | 2021-04-09 | 泰州隆基乐叶光伏科技有限公司 | 导电金属箔冲压方法及冲压装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2014168028A (ja) | 2014-09-11 |
WO2014119445A1 (ja) | 2014-08-07 |
SG11201505565QA (en) | 2015-09-29 |
KR20150111928A (ko) | 2015-10-06 |
TW201438162A (zh) | 2014-10-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150930 |
|
WD01 | Invention patent application deemed withdrawn after publication |