CN104956470A - 半导体装置的制造方法以及制造装置 - Google Patents

半导体装置的制造方法以及制造装置 Download PDF

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Publication number
CN104956470A
CN104956470A CN201480006560.6A CN201480006560A CN104956470A CN 104956470 A CN104956470 A CN 104956470A CN 201480006560 A CN201480006560 A CN 201480006560A CN 104956470 A CN104956470 A CN 104956470A
Authority
CN
China
Prior art keywords
diaphragm seal
semiconductor element
semiconductor
sealing
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480006560.6A
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English (en)
Chinese (zh)
Inventor
松下孝夫
森伸一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of CN104956470A publication Critical patent/CN104956470A/zh
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/005Processes relating to semiconductor body packages relating to encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
CN201480006560.6A 2013-01-29 2014-01-22 半导体装置的制造方法以及制造装置 Pending CN104956470A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2013014668 2013-01-29
JP2013-014668 2013-01-29
JP2013053628A JP2014168028A (ja) 2013-01-29 2013-03-15 半導体装置の製造方法および製造装置
JP2013-053628 2013-03-15
PCT/JP2014/051232 WO2014119445A1 (ja) 2013-01-29 2014-01-22 半導体装置の製造方法および製造装置

Publications (1)

Publication Number Publication Date
CN104956470A true CN104956470A (zh) 2015-09-30

Family

ID=51262158

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480006560.6A Pending CN104956470A (zh) 2013-01-29 2014-01-22 半导体装置的制造方法以及制造装置

Country Status (6)

Country Link
JP (1) JP2014168028A (ja)
KR (1) KR20150111928A (ja)
CN (1) CN104956470A (ja)
SG (1) SG11201505565QA (ja)
TW (1) TW201438162A (ja)
WO (1) WO2014119445A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112621891A (zh) * 2019-09-24 2021-04-09 泰州隆基乐叶光伏科技有限公司 导电金属箔冲压方法及冲压装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101383295A (zh) * 2007-09-03 2009-03-11 日东电工株式会社 光学半导体装置的生产工艺和该工艺中使用的片
CN102347403A (zh) * 2010-07-27 2012-02-08 日东电工株式会社 发光二极管装置的制造方法
US20120052608A1 (en) * 2010-08-25 2012-03-01 Yoo Cheol-Jun Phosphor film, method of forming the same, and method of coating phosphor layer on led chips

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5242947B2 (ja) * 2007-05-15 2013-07-24 リンテック株式会社 シート貼付装置及び貼付方法
JP5333056B2 (ja) * 2009-08-26 2013-11-06 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5156033B2 (ja) * 2010-01-12 2013-03-06 リンテック株式会社 樹脂封止型半導体装置の製造方法
US8823186B2 (en) * 2010-12-27 2014-09-02 Shin-Etsu Chemical Co., Ltd. Fiber-containing resin substrate, sealed substrate having semiconductor device mounted thereon, sealed wafer having semiconductor device formed thereon, a semiconductor apparatus, and method for manufacturing semiconductor apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101383295A (zh) * 2007-09-03 2009-03-11 日东电工株式会社 光学半导体装置的生产工艺和该工艺中使用的片
CN102347403A (zh) * 2010-07-27 2012-02-08 日东电工株式会社 发光二极管装置的制造方法
US20120052608A1 (en) * 2010-08-25 2012-03-01 Yoo Cheol-Jun Phosphor film, method of forming the same, and method of coating phosphor layer on led chips

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112621891A (zh) * 2019-09-24 2021-04-09 泰州隆基乐叶光伏科技有限公司 导电金属箔冲压方法及冲压装置

Also Published As

Publication number Publication date
JP2014168028A (ja) 2014-09-11
WO2014119445A1 (ja) 2014-08-07
SG11201505565QA (en) 2015-09-29
KR20150111928A (ko) 2015-10-06
TW201438162A (zh) 2014-10-01

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