CN104956470A - Production method and production device for semiconductor devices - Google Patents
Production method and production device for semiconductor devices Download PDFInfo
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- CN104956470A CN104956470A CN201480006560.6A CN201480006560A CN104956470A CN 104956470 A CN104956470 A CN 104956470A CN 201480006560 A CN201480006560 A CN 201480006560A CN 104956470 A CN104956470 A CN 104956470A
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- diaphragm seal
- semiconductor element
- semiconductor
- sealing
- semiconductor device
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
This method is a production method for semiconductor devices obtained by sealing semiconductor elements by using a sealing sheet. The production method for semiconductor devices comprises: a preparation step in which a sealing sheet and a plurality of semiconductor elements are prepared; a sealing step in which, after the preparation step, the plurality of semiconductor elements are sealed as a batch, by using the sealing sheet; and a recovery step in which, after the sealing step, the sealing sheet and the plurality of semiconductor elements are recovered.
Description
Technical field
The present invention relates to manufacture method and the manufacturing installation of semiconductor device, specifically, relate to the manufacture method of semiconductor device and the manufacturing installation of semiconductor device.
Background technology
All the time, there will be a known the method manufacturing encapsulating semiconductor device by utilizing diaphragm seal to carry out sealing semiconductor element.
Such as, propose there is method as described below: after the prepreg containing epoxy resin is pasted to the integrated circuit (IC) chip be installed in carrier film, put it in metal pattern, make resin molded semiconductor device (for example, referring to following patent documentation 1 by compression molding.)。
At first technical literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 5-291319 publication
The problem that invention will solve
In recent years, the semiconductor device sought multiple semiconductor element encapsulation according to purposes and object.But the method for patent documentation 1 seals an integrated circuit (IC) chip and obtains the resin molded semiconductor device with an integrated circuit (IC) chip, cannot meet above-mentioned requirements.
Summary of the invention
The object of the invention is to, provide a kind of and multiple semiconductor element can be sealed in the lump and manufacture method and the manufacturing installation of the semiconductor device of semiconductor device can be manufactured easily.
For the means of dealing with problems
The manufacture method of semiconductor device of the present invention is the manufacture method of the semiconductor device obtained by utilizing diaphragm seal to carry out sealing semiconductor element, it is characterized in that, comprising: the preparatory process preparing described diaphragm seal and multiple described semiconductor element; After described preparatory process, utilize the sealing process that multiple described semiconductor element seals by described diaphragm seal in the lump; And, after described sealing process, reclaim the recovery process of described diaphragm seal and multiple described semiconductor element.
According to this manufacture method, prepare diaphragm seal and multiple semiconductor element, then, diaphragm seal is utilized to be sealed in the lump by multiple semiconductor element, then, reclaim diaphragm seal and multiple semiconductor element, therefore, it is possible to sealed in the lump by multiple semiconductor element, manufacture the semiconductor device possessing multiple semiconductor element easily.Therefore, it is possible to use according to various object and purposes the semiconductor device that multiple semiconductor element is sealed by diaphragm seal.
In addition, in the manufacture method of semiconductor device of the present invention, preferably, the removal step of the redundance removing described diaphragm seal is also comprised.
According to this manufacture method, owing to removing the redundance of diaphragm seal, therefore, it is possible to the semiconductor device of shape desired by obtaining.
In addition, in the manufacture method of semiconductor device of the present invention, preferably, described preparatory process comprises the positioning process of described diaphragm seal relative to multiple described semiconductor element location.
According to this manufacture method, by the positioning process positioned relative to multiple semiconductor element, multiple semiconductor element can be sealed with high accuracy.Therefore, it is possible to manufacture semiconductor device with high accuracy.
In addition, in the manufacture method of semiconductor device of the present invention, preferably, described recovery process comprises the diaphragm seal temperature control operation of the temperature controlling described diaphragm seal.
According to this manufacture method, control operation, the distortion of the diaphragm seal after can effectively preventing multiple semiconductor element encapsulation by the diaphragm seal temperature controlling the temperature of diaphragm seal.Therefore, it is possible to the semiconductor device of shape desired by manufacturing.
In addition, in the manufacture method of semiconductor device of the present invention, preferably, described sealing process comprises: the preparation heating process heating described diaphragm seal in advance; And, after described preparation heating process, heat described diaphragm seal and seal the formal heating process of multiple described semiconductor element.
According to this manufacture method, by preparation heating process, make diaphragm seal soft, then, by formal heating process, can reliably sealing semiconductor element.Therefore, it is possible to easily diaphragm seal is shaped as desired shape, and described diaphragm seal can be utilized to carry out sealing semiconductor element.Consequently, the semiconductor device of desired shape can be manufactured.
In addition, in the manufacture method of semiconductor device of the present invention, preferably, described preparatory process comprises the temperature of the atmosphere controlling described diaphragm seal and/or the atmosphere temperature/humid control operation of humidity.
According to this manufacture method, owing to controlling the temperature of atmosphere and/or the humidity of diaphragm seal, therefore, it is possible to keep with constant quality and diaphragm seal before taking care of sealing semiconductor element.Therefore, it is possible to improve diaphragm seal to the precision of the sealing of semiconductor element.
In addition, in the manufacture method of semiconductor device of the present invention, preferably, in described preparatory process, comprise the redundance that removes described diaphragm seal and the outer shape of described diaphragm seal carried out to the trimming of shaping.
According to this manufacture method, in preparatory process, owing to removing the redundance of diaphragm seal, and shaping is carried out to the outer shape of diaphragm seal, therefore, it is possible to utilize the diaphragm seal after shaping to carry out sealing semiconductor element with the operability of excellence.
In addition, in the manufacture method of semiconductor device of the present invention, preferably, the protected component protection of described diaphragm seal, described preparatory process and/or described recovery process comprise the stripping process peeled off from described diaphragm seal by described protection component.
According to this manufacture method, protection component can be utilized to protect diaphragm seal, and peeled off from diaphragm seal by the unwanted protection component of sealing of stripping process by semiconductor element.
In addition, the manufacturing installation of semiconductor device of the present invention is the manufacturing installation utilizing diaphragm seal to carry out the semiconductor device of sealing semiconductor element, it is characterized in that, possesses: the preparation device preparing described diaphragm seal and multiple described semiconductor element; Utilize the sealing device that multiple described semiconductor element seals by ready described diaphragm seal in the lump; And, reclaim the retracting device of the multiple described semiconductor element after by described diaphragm seal sealing.
According to this manufacturing installation, diaphragm seal and multiple semiconductor element is prepared by preparation device, ready diaphragm seal is utilized to be sealed in the lump by multiple semiconductor element by sealing device, reclaim by multiple semiconductor elements of diaphragm seal good seal by retracting device, therefore, it is possible to sealed in the lump by multiple semiconductor element, manufacture the semiconductor device possessing multiple semiconductor element easily.Therefore, it is possible to use according to various object and purposes the semiconductor device that multiple semiconductor element is sealed by diaphragm seal.
In addition, in the manufacturing installation of semiconductor device of the present invention, preferably, the removing device of the redundance removing described diaphragm seal is also possessed.
According to this manufacturing installation, due to the redundance of removing device removing diaphragm seal can be utilized, therefore, it is possible to the semiconductor device of shape desired by obtaining.
In addition, in the manufacturing installation of semiconductor device of the present invention, preferably, described preparation device possesses the positioner of described diaphragm seal relative to multiple described semiconductor element location.
According to this manufacturing installation, utilize positioner to be positioned relative to multiple semiconductor element by diaphragm seal, multiple semiconductor element can be sealed with high accuracy thus.Therefore, it is possible to manufacture semiconductor device with high accuracy.
In addition, in the manufacturing installation of semiconductor device of the present invention, preferably, described retracting device possesses the diaphragm seal temperature control equipment of the temperature controlling described diaphragm seal.
According to this manufacturing installation, utilize diaphragm seal temperature control equipment to control the temperature of diaphragm seal, the distortion of the diaphragm seal after can effectively preventing multiple semiconductor element encapsulation thus.Therefore, it is possible to the semiconductor device of shape desired by manufacturing.
In addition, in the manufacturing installation of semiconductor device of the present invention, preferably, described sealing device possesses: in advance to the preparation heater that described diaphragm seal heats; And, to preparing the described diaphragm seal after heating to heat by the formal heater of multiple described semiconductor element encapsulation.
According to this manufacturing installation, preparation heater can be utilized to make diaphragm seal become soft, then, utilize formal heater reliably sealing semiconductor element.Therefore, it is possible to easily diaphragm seal is shaped as desired shape, and described diaphragm seal can be utilized to carry out sealing semiconductor element.Consequently, the semiconductor device of desired shape can be manufactured.
In addition, in the manufacturing installation of semiconductor device of the present invention, preferably, described preparation device possesses the temperature of the atmosphere controlling described diaphragm seal and/or the atmosphere temperature/humidity conditioner of humidity.
According to this manufacturing installation, due to atmosphere temperature/humidity conditioner can be utilized to control temperature and/or the humidity of the atmosphere of diaphragm seal, therefore, it is possible to keep with constant quality and diaphragm seal before taking care of sealing semiconductor element.Therefore, it is possible to improve diaphragm seal to the precision of the sealing of semiconductor element.
In addition, in the manufacturing installation of semiconductor device of the present invention, preferably, described preparation device possesses the redundance that removes described diaphragm seal and the outer shape of described diaphragm seal is carried out to the apparatus for shaping of shaping.
According to this manufacturing installation, in preparation device, apparatus for shaping can be utilized to carry out shaping to the outer shape of diaphragm seal, therefore, it is possible to utilize the diaphragm seal after shaping to carry out sealing semiconductor element with the operability of excellence to remove the redundance of diaphragm seal.
In addition, in the manufacturing installation of semiconductor device of the present invention, preferably, the protected component protection of described diaphragm seal, described preparation device and/or described retracting device possess the stripping off device peeled off from described diaphragm seal by described protection component.
According to this manufacturing installation, protection component can be utilized to protect diaphragm seal, and in stripping off device, the unwanted protection component of sealing of semiconductor element can be peeled off from diaphragm seal.
Invention effect
According to manufacture method and the manufacturing installation of semiconductor device of the present invention, can manufacture easily and multiple semiconductor element sealed in the lump and possesses the semiconductor device of multiple semiconductor element, use according to various object and purposes.
Accompanying drawing explanation
Fig. 1 illustrates the schematic top of an execution mode of the manufacturing installation of semiconductor device of the present invention.
Fig. 2 is the cutaway view of each manufacturing process of an execution mode of the manufacture method that semiconductor device of the present invention is shown, a () expression utilizes carrying device to send the operation of diaphragm seal, b () represents the first removing/trimming, c () represents the first stripping process, (d) represents the operation of upper surface diaphragm seal being placed in multiple semiconductor element.
Fig. 3 is that then Fig. 2 illustrates the cutaway view of each manufacturing process of an execution mode of the manufacture method of semiconductor device of the present invention, e () represents sealing process, f () represents the second stripping process, g () represents the second removing/trimming, (h) represents the operation reclaiming semiconductor device.
Fig. 4 illustrates the operation sent from carrying device by rectangular diaphragm seal and utilizes the first removing device diaphragm seal to be cut into the stereogram of the operation of toroidal.
Embodiment
In FIG, paper left and right directions is set to fore-and-aft direction (first direction), paper above-below direction is set to left and right directions (second direction), paper depth direction is set to above-below direction (third direction).The direction of Fig. 2 ~ Fig. 4 is according to direction indicated by the arrow in FIG.In addition, front side is the downstream, carrying direction of diaphragm seal described later, and rear side is the carrying direction upstream side of diaphragm seal.
As shown in Figure 1, the manufacturing installation 10 of semiconductor device is (below, sometimes simply referred to as manufacturing installation 10.) be manufacturing installation for the manufacture of utilizing diaphragm seal 4 to carry out the semiconductor device 1 (with reference to Fig. 3 (h)) of sealing semiconductor element 2.
The retracting device 13 that the manufacturing installation 10 of this semiconductor device integrally possesses preparation device 11, is configured in the sealing device 12 of the front side of preparation device 11, is configured in the front side of sealing device 12.In manufacturing installation 10, preparation device 11, sealing device 12 and retracting device 13 configure along fore-and-aft direction proper alignment, according to the above-mentioned configuration of preparation device 11, sealing device 12 and retracting device 13, manufacturing installation 10 extends along fore-and-aft direction under top view.In this manufacturing installation 10, diaphragm seal 4, in preparation device 11, sealing device 12 and retracting device 13, is carried from rear, toward the front while multiple semiconductor element 2 is sealed and reclaimed.
Preparation device 11 is configured in the rear portion of manufacturing installation 10.Preparation device 11 possesses: carrying device 8; Be configured in the first removing device 17 as removing device of the front side of carrying device 8; Be configured in first stripping off device 49 as stripping off device of the front side of the first removing device 17; Be configured in the mounting apparatus 51 of the front side of the first stripping off device 49; And be configured in the substrate preparation device 24 in left side (with a side side in orthogonal direction, carrying direction) of mounting apparatus 51.Remove the above-mentioned configuration of device 17, first stripping off device 49, mounting apparatus 51 and substrate preparation device 24 according to carrying device 8, first, preparation device 11 is set under top view in L-shaped shape.
As shown in Fig. 2 (a) and Fig. 4, carrying device 8 possesses the outlet roller 29 configured along the mode of left and right directions with axle.In carrying device 8, outlet roller 29 is wound with rectangular diaphragm seal 4 described later, thus, carrying device 8 is configured to diaphragm seal 4 to send toward the front with rectangular state.It should be noted that, outlet roller 29 is configured to, and supporting course 43 is towards downside, and diaphragm seal 4 towards upside, and is sent by the first peel ply 33.
First removing device 17 removes the balance 36 (aftermentioned) of diaphragm seal 4, specifically, as shown in Fig. 2 (b), possess as the stocking cutter 44 of apparatus for shaping, balance stripping off device (not shown) and the first Handling device 14.
As stocking cutter 44, such as, enumerate Thomson cutter etc.Stocking cutter 44 is configured to, by diaphragm seal 4, sealant 31 and peel ply 32 cut off in a thickness direction, and do not cut off supporting course 43 in a thickness direction.
Balance stripping off device (not shown) will be cut off by stocking cutter 44 and not for the mechanism of peeling off from supporting course 43 as the balance 36 of redundance of the sealing of multiple semiconductor element 2, such as, enumerates known mechanism for stripping.
In addition, because the balance 36 of the hermetic unit 55 of the sealing for multiple semiconductor element 2 from diaphragm seal 4 can be separated by stocking cutter 44 and balance stripping off device, therefore form the removing device of the balance 36 of removing diaphragm seal 4.
First Handling device 14 possesses: guide rail 38; Be supported on the arm 37 of guide rail 38; Be arranged on the adsorbent equipment 39 of the bottom of arm 37; Be built in the carrying heater 16 as diaphragm seal temperature control equipment of adsorbent equipment 39.
As shown in Figure 1, guide rail 38 is arranged in the mode extended along fore-and-aft direction on the top of manufacturing installation 10, such as, arrange continuously with preparation device 11, sealing device 12, retracting device 13, in more detail, remove with first of preparation device 11 device 17, first stripping off device 49 and mounting apparatus 51, sealing device 12, retracting device 13 the second stripping off device 50 arrange continuously.As shown in Fig. 2 (b), arm 37 supports as moving along fore-and-aft direction by guide rail 38.In more detail, with reference to Fig. 1, arm 37 supports as moving to preparation device 11, sealing device 12, retracting device 13 by guide rail 38.
As shown in FIG. 2 and 3, arm 37 is formed as extending along above-below direction, and its upper end is supported on guide rail 38.In addition, arm 37 is configured to stretch along above-below direction, and specifically, namely bottom downward movement extends, and namely movement is shortened upward.In addition, arm 37 can make its bottom slightly move along left and right directions.
Adsorbent equipment 39 can adsorb diaphragm seal 4 by attracting action, and liberates diaphragm seal 4 by the stopping of attraction action.Specifically, adsorbent equipment 39 is formed as the roughly writing board shape extended along fore-and-aft direction and left and right directions, under top view, is formed as the size identical with the diaphragm seal 4 of monolithic or the size slightly larger than the diaphragm seal 4 of monolithic.
Carrying heater 16 is built in adsorbent equipment 39, in addition, carry the heating-up temperature of heater 16 be set as with changing according to each operation of correspondence each manufacturing installation, specifically the first removing device 17, first stripping off device 49, mounting apparatus 51, sealing device 12 and the second stripping off device 50 respective desired by temperature.
It should be noted that, the first removing device 17 is provided with and fetches roller for fetching the not shown of supporting course 43.
As shown in Figure 1, the first stripping off device 49 is provided with and removes device 17 continuous print first Handling device 14 with first, in addition, as shown in Fig. 2 (c), the first stripping off device 49 possesses the mechanism for stripping of the below being arranged on the first Handling device 14.Second peel ply 34 can be peeled off from sealant 31 by mechanism for stripping, such as, enumerates the mechanism for stripping of the roller 53 possessing adhesive tape 52 and reel this adhesive tape 52, such as, enumerates known mechanism for stripping.
As shown in Figure 1, mounting apparatus 51 is provided with and the first stripping off device 49 continuous print first Handling device 14, in addition, as shown in Fig. 2 (d), mounting apparatus 51 possesses the loading plate 56 of the built-in mounting heater 61 as preparation heater and not shown positioner.
Loading plate 56 is formed as the substantially planar extended along direction, face.Thus, mounting apparatus 51 can receive the substrate 3 come from substrate preparation device 24 (with reference to Fig. 1) supply.In addition, due to mounting heater 61 built-in in loading plate 56, therefore loading plate 56 can prepare the diaphragm seal 4 heating and be placed on substrate 3.
Not shown positioner such as possesses: for detect diaphragm seal 4, relative to the camera of the position of the multiple semiconductor elements 2 installed on the substrate 3; Based on by camera calibration to the position of diaphragm seal 4 adjust the control device (CPU etc.) of arm 37 (bottom) position on fore-and-aft direction and left and right directions.
In addition, on mounting apparatus 51 and the following sealing device 12 illustrated, the second not shown Handling device for being carried from mounting apparatus 51 to sealing device 12 by the substrate be placed on loading plate 56 3 is provided with.It should be noted that, mounting apparatus 51 is configured for the device of the part (preparation heating process) implementing sealing process described later.
Substrate preparation device 24 can the substrate 3 being provided with the monolithic of multiple semiconductor element 2 shown in set-up dirgram 2 (d), and is supplied (sending) to mounting apparatus 51 by described substrate 3.
In addition, preparation device 11 possesses atmosphere temperature/humidity conditioner (not shown).Atmosphere temperature/humidity conditioner is the temperature of atmosphere and/or the device of humidity that control the diaphragm seal 4 prepared in preparation device 11, such as, enumerates known atmosphere temperature/humidity conditioner.It should be noted that, around preparation device 11, be provided with not shown housing, utilize housing to cover preparation device 11, thus, preparation device 11 and extraneous air are separated.Housing is utilized to flow into preparation device 11 to prevent extraneous air, thus the temperature controlled more reliably in housing and/or humidity.
As shown in Figure 1, sealing device 12 is provided with and preparation device 11 continuous print first Handling device 14, in addition, as shown in Fig. 3 (e), sealing device 12 possesses the hot stamping device 26 as formal heater.Hot stamping device 26 possesses two the first pressed sheet 27 and the second pressed sheets 28 as punching component spaced apart and arranged opposite in the vertical direction each other.
First pressed sheet 27 in the writing board shape extended along fore-and-aft direction and left and right directions, and is configured in the bottom of hot stamping device 26.Second pressed sheet 28 and the first pressed sheet 27 upside at the first pressed sheet 27 arranged opposite at spaced intervals.In addition, the second pressed sheet 28 is configured in fact parallel with the first pressed sheet 27.
Second pressed sheet 28 is in the shape identical with the first pressed sheet 27, and relatively can move up and down relative to the first pressed sheet 27, specifically, the second pressed sheet 28 can press and be clipped in diaphragm seal 4 between the first pressed sheet 27 and the second pressed sheet 28.
In addition, the first pressed sheet 27 and the second pressed sheet 28 separately among be built-in with not shown heater.
Sealing device 12 possesses above-mentioned hot stamping device 26, therefore utilizes ready diaphragm seal 4 to be sealed in the lump by multiple semiconductor element 2.
As shown in Figure 1, retracting device 13 possesses: the second stripping off device 50 as stripping off device be connected with the front side of sealing device 12; Be configured in the second removing device 18 as removing device of the front side of the second stripping off device 50; Be configured in the semiconductor device retracting device 40 of the front side of the second removing device 18.Remove the above-mentioned configuration of device 18 and semiconductor device retracting device 40 according to the second stripping off device 50, second, retracting device 13 is set under top view from the roughly rectilinear form that sealing device 12 forwards extends.
As shown in Fig. 3 (f), the second stripping off device 50 possesses mechanism for stripping and support plate 54.
First peel ply 33 can be peeled off from sealant 31 by mechanism for stripping, such as, enumerates the mechanism for stripping (specifically, possess the mechanism for stripping of adhesive tape 52 and roller 53) identical with the mechanism for stripping of the first above-mentioned stripping off device 49.
Support plate 54 is configured in the bottom of the second stripping off device 50, specifically, is configured in the downside of mechanism for stripping, in addition, is built-in with the supports heaters 62 as diaphragm seal temperature control equipment in this support plate 54.Second stripping off device 50 can utilize supports heaters 62 to heat the semiconductor device 1 of the upper surface being placed in support plate 54.
In addition, as shown in the imaginary line of Fig. 3 (f), the second stripping off device 50 is provided with and preparation device 11 and sealing device 12 continuous print first Handling device 14.
As shown in Fig. 3 (g), the second removing device 18 possesses the housing 22 for accommodating semiconductor device 1 and cuts off the cutting member 45 of component as first.
What open above housing 22 is formed as has under casing shape, and four sidewalls integrally possessing diapire and extend upward from the peripheral end portion of diapire.In addition, each sidewall of housing 22 is formed the suction port 23 of its thickness direction through, and at suction port 23, place is connected with not shown suction device.
In addition, being provided with on the top of housing 22 can to the blow-off outlet of semiconductor device 1 blow gas (not shown).
Cutting member 45 possesses: extend and the main shaft that can move freely along fore-and-aft direction and left and right directions along above-below direction; And be arranged on main shaft bottom and be formed as can relative to main shaft rotate rotary cutter.Specifically, as cutting member 45, enumerate and possess the milling machine (preferably, end mill etc.) etc. of slotting cutter as rotary cutter.Cutting member 45 while make main shaft unroll movement relative to semiconductor device 1, the redundance 35 (aftermentioned) of removing (cut-out) diaphragm seal 4.
On semiconductor device retracting device 40, can be provided with not shown box with loading and unloading relative to semiconductor device retracting device 40, thus, the semiconductor device 1 obtained is contained in box by semiconductor device retracting device 40, reclaims semiconductor device 1 according to box.
Thus, semiconductor device retracting device 40 reclaims the multiple semiconductor elements 2 after being sealed by diaphragm seal 4.
It should be noted that, retracting device 13 is provided with the 3rd not shown Handling device.Specifically, configure in the scope that second stripping off device 50, second of the 3rd Handling device in retracting device 13 removes device 18 and semiconductor device retracting device 40.As the 3rd Handling device, such as, enumerate known Handling device, such as, to enumerate the semiconductor device 1 of having been peeled off the first peel ply 33 by the second stripping off device 50 from the lower side bearing (mentioning) of semiconductor device 1 while to the Handling device etc. of front side carrying.
Next, the manufacture method using this manufacturing installation 10 to manufacture semiconductor device 1 is described.
The method is the method obtaining semiconductor device 1 by utilizing diaphragm seal 4 to carry out sealing semiconductor element 2, specifically, comprises the preparatory process preparing diaphragm seal 4 and multiple semiconductor element 2; After preparatory process, utilize the sealing process that multiple semiconductor element 2 seals by diaphragm seal 4 in the lump; And after sealing process, reclaim the recovery process of diaphragm seal 4 and multiple semiconductor element 2.
In the method, first, utilize the preparation device 11 of manufacturing installation 10 to implement preparatory process.
Specifically, as shown in Fig. 2 (a) and Fig. 4, first, rectangular diaphragm seal 4 is wound in the outlet roller 29 of carrying device 8.
As shown in Figure 4, diaphragm seal 4 is prepared to rectangular sheet, and then, diaphragm seal 4 is shaped as the sheet of overlooking monolithic in circular shape corresponding with substrate 3, for the sealing of semiconductor element 2 (aftermentioned).
As shown in Fig. 2 (a), diaphragm seal 4 is prepared to the laminates possessing sealant 31, be laminated in the peel ply 32 as protection component of the upper surface of sealant 31 and lower surface.
Sealant 31 is formed as plate shape by encapsulant.As encapsulant, such as, the heat-curing resin of Thermocurable silicone resin, epoxy resin, Thermocurable polyimide resin, phenol resin, urea resin, melamine resin, unsaturated polyester resin, diallyl phthalate resin, Thermocurable polyurethane resin etc. can be enumerated.In addition, as encapsulant, the hot curing resin composition in the proper ratio containing above-mentioned heat-curing resin and additive can be enumerated.
As additive, such as, enumerate filler, fluorophor etc.As filler, enumerate the inorganic fine particles such as such as silicon dioxide, titanium dioxide, talcum, aluminium oxide, aluminium nitride, silicon nitride, the organic particles etc. such as such as silicone particle.Fluorophor has wavelength convert function, enumerates the yellow fluorophor that such as blue light can be converted to sodium yellow, the red-emitting phosphors etc. that blue light can be converted to red light.As yellow fluorophor, enumerate such as Y
3al
5o
12: the carbuncle type fluorophor such as Ce (YAG (yttrium-aluminium-garnet): Ce).As red-emitting phosphors, enumerate such as CaAlSiN
3: Eu, CaSiN
2: the nitride phosphors etc. such as Eu.
Sealant 31 was modulated into half solid shape before sealing semiconductor element 2, specifically, when encapsulant contains heat-curing resin, such as, before solidifying (C rank) completely, in other words, modulated under semi-solid preparation (B rank) state.
The size of sealant 31 is set appropriately according to the size of semiconductor element 2 and substrate 3, specifically, the length of the left and right directions of the sealant 31 when diaphragm seal 4 is prepared to rectangular sheet and width are such as more than 100mm, be preferably more than 200mm, and be such as below 1500mm, be preferably below 700mm.In addition, the thickness of sealant 31 is corresponding with the size of semiconductor element 2 and be set appropriately, such as, be more than 30 μm, is preferably more than 100 μm, and is such as less than 3000 μm, is preferably less than 1000 μm.
As shown in Fig. 2 (a), peel ply 32 is before sealing semiconductor element 2, protect the upper surface of sealant 31 and the screening glass of lower surface (two sides).Peel ply 32 possesses the first peel ply 33 of whole of the upper surface being laminated in sealant 31 and is laminated in second peel ply 34 of whole of lower surface of sealant 31.
First peel ply 33 is the screening glass of the upper surface (one side) protecting sealant 31 before sealing semiconductor element 2 and when sealing; specifically; such as; enumerate the polymer sheets such as polythene strip, polyester sheet (PET etc.), polystyrene sheet, POLYCARBONATE SHEET, polyimide piece; such as potsherd, such as metal forming etc.In the first peel ply 33, also can implement the lift-off processing such as fluorine process to the contact-making surface contacted with sealant 31.The size of the first peel ply 33 is set appropriately according to the stripping conditions of the second stripping off device 50 (with reference to Fig. 3 (f)) described later, thickness is such as more than 15 μm, be preferably more than 25 μm, and be such as less than 125 μm, be preferably less than 75 μm.
Second peel ply 34 is before sealing semiconductor element 2, when sealing and protects the screening glass of sealant 31 lower surface (one side) after sealing; its material and size are set appropriately according to the stripping conditions of the first stripping off device 49 (with reference to Fig. 2 (c)) described later; specifically, with the material of the first peel ply 33 and measure-alike.
In addition, diaphragm seal 4 is provided with the supporting course 43 of bearing seal sheet 4.
Supporting course 43 formed the back side of diaphragm seal 4 before sealing semiconductor element 2, specifically, was laminated in whole of the lower surface of the second peel ply 34.As the supporting material forming supporting course 43, as long as the material of supporting the second peel ply 34, do not limit especially, such as enumerate the polymer sheets such as polythene strip, polyester sheet (PET etc.), polystyrene sheet, POLYCARBONATE SHEET, polyimide piece, such as potsherd, such as metal forming etc.The thickness of supporting course 43 is such as more than 15 μm, is preferably more than 25 μm, and is such as less than 125 μm, is preferably less than 75 μm.
In addition, make the atmosphere temperature of preparation device 11/humidity conditioner action and control temperature and/or the humidity of the atmosphere (in other words, the atmosphere of diaphragm seal 4) of the preparation device 11 in housing in advance.Specifically, temperature being controlled as such as 15 ~ 40 DEG C, is 25 ~ 60%RH (atmosphere temperature/humid control operation) by humid control.
In addition, the carrying heater 16 of the adsorbent equipment 39 shown in Fig. 2, the heater loading the first pressed sheet 27 shown in heater 61, Fig. 3 and the second pressed sheet 28 and supports heaters 62 are redefined for set point of temperature.Specifically, carrying heater 16 is heated to remove temperature corresponding to device 17 with first, such as 40 ~ 100 DEG C, mounting heater 61 is heated to such as 50 ~ 90 DEG C, such as when encapsulant is heat-curing resin, as required, the heater of the first pressed sheet 27 and the second pressed sheet 28 is heated to make encapsulant solidify the temperature on (C rank) or the temperature higher than this temperature completely, and set higher than the temperature of mounting heater 61, specifically, set than the temperature height such as more than 10 DEG C loading heater 61, be preferably more than 20 DEG C, and set than the temperature height such as less than 120 DEG C loading heater 61, be preferably less than 80 DEG C.The heater of the first pressed sheet 27 and the second pressed sheet 28 is heated to such as 60 ~ 210 DEG C.In addition, supports heaters 62 is heated to the temperature of the warpage that can prevent sealant 31, such as be heated to the temperature different from the temperature of the first pressed sheet 27 and the second pressed sheet 28, set lower such as more than 10 DEG C than the temperature of the first pressed sheet 27 and the second pressed sheet 28, be preferably more than 20 DEG C, or set lower such as less than 20 DEG C than the temperature of the first pressed sheet 27 and the second pressed sheet 28, be preferably less than 10 DEG C, specifically, 50 ~ 200 DEG C are heated to.
It should be noted that, carrying heater 16 is controlled as the temperature corresponding with each device (operation) of manufacturing installation 10 in the first removing device 17 and the first stripping off device 49 (and mounting apparatus 51) of preparation device 11.
Then, as shown in the arrow of Fig. 2 (a) and Fig. 4, the outlet roller 29 of diaphragm seal 4 from carrying device 8 is sent toward the front.
Then, as shown in Fig. 2 (b) and Fig. 4, in the first removing device 17, stocking cutter 44 is first utilized diaphragm seal 4 to be divided into the balance 36 of hermetic unit 55 for the sealing of multiple semiconductor element 2 and encirclement hermetic unit 55.Hermetic unit 55 is such as formed as overlooking in circular shape, in rectangular diaphragm seal 4, and proper alignment configuration spaced apart from each other in the longitudinal direction.It should be noted that, hermetic unit 55 is set as the shape identical with the outer shape of substrate 3 and identical size.The linking portion that above-mentioned Width both ends link up is integrally formed by between the Width both ends of the left and right directions both sides of each hermetic unit 55 and hermetic unit 55 adjacent in the longitudinal direction by balance 36.In addition, stocking cutter 44 cuts off sealant 31 and peel ply 32 in a thickness direction, and does not cut off supporting course 43 in a thickness direction.
Then, as shown in the single dotted broken line arrow of Fig. 2 (b), in preparation device 11, not shown balance stripping off device is utilized to be peeled off from supporting course 43 by balance 36.Thus, the balance 36 (the first removing/trimming as removal step and trimming in preparatory process) of diaphragm seal 4 is removed.
Then, with reference to Fig. 2 (b), the bottom of arm 37 is extended, in other words, the bottom of arm 37 is declined, the lower surface of adsorbent equipment 39 is contacted with the upper surface of diaphragm seal 4 (the first peel ply 33 of hermetic unit 55).Then, the diaphragm seal 4 of monolithic is adsorbed by the attraction action of adsorbent equipment 39.In other words, diaphragm seal 4 is made to be adsorbed in the bottom of arm 37.
Then, as shown in the arrow of Fig. 2 (b) and imaginary line, the bottom of arm 37 is shortened, in other words, make the bottom of arm 37 rises, diaphragm seal 4 is peeled off from supporting course 43, specifically, sealant 31 and peel ply 32 are peeled off from supporting course 43.Thus, the hermetic unit 55 of diaphragm seal 4 is made to be separated from supporting course 43.In other words, by the hermetic unit 55 of the diaphragm seal 4 of monolithic from supporting course 43 pull-up.
It should be noted that, the supporting course 43 after peel seal part 55 is fetched by not shown roller of fetching in the first removing device 17.
Then, with reference to Fig. 1, arm 37 is moved toward the front along guide rail 38, the diaphragm seal 4 of monolithic is carried to the first stripping off device 49.
As shown in Fig. 2 (c), in the first stripping off device 49, mechanism for stripping is utilized to be peeled off (the first stripping process as stripping process preparatory process) from sealant 31 by the second peel ply 34.
In the first stripping process, the temperature of carrying heater 16 can be controlled as the temperature corresponding with the stripping of mechanism for stripping to the second peel ply 34.
Then, arm 37 is moved toward the front along guide rail 38, the diaphragm seal 4 of monolithic is carried to mounting apparatus 51.
In addition, the substrate preparation device 24 shown in Fig. 1 is utilized to prepare to be provided with the substrate 3 of the monolithic of multiple semiconductor element 2.
As long as the mounting substrate of semiconductor element 2 installed by substrate 3, do not limit especially, such as, comprise silicon substrate, ceramic substrate, polyimide resin substrate, be laminated with the insulated substrate such as multilayer board of insulating barrier on metallic substrates.The outer shape of substrate 3, in other words, plan view shape is formed as the shape practically identical with the outer shape of obtained semiconductor device 1, such as, is formed as the flat board of the monolithic overlooked in circular shape.The size of substrate 3 is set appropriately according to the purposes of semiconductor device 1 and object, such as, be more than 50mm, is preferably more than 100mm, and is such as below 1500mm, is preferably below 700mm.
Semiconductor element 2 is provided with multiple relative to a substrate 3.Multiple semiconductor element 2 is proper alignment configuration spaced apart from each other on fore-and-aft direction and left and right directions.In addition, each semiconductor element 2 such as connected by wire bond or flip-chip install and be equipped on the surface of substrate 3.Each semiconductor element 2 be formed as the maximum length in thickness (above-below direction length) specific surface direction (direction along fore-and-aft direction and left and right directions) short analyse and observe substantially rectangular shape.
As semiconductor element 2, such as, enumerate optical semiconductor, electronic component etc.
As optical semiconductor, such as enumerate LED (light-emitting diode), LD (laser diode) etc., these are the semiconductor elements converting electrical energy into luminous energy.
Electronic component is the semiconductor element of the energy converted electrical energy into beyond light, specifically, is the semiconductor element converting electrical energy into signal energy etc., specifically, enumerates transistor, diode etc.
Size and the configuration of semiconductor element 2 are set appropriately according to the purposes of semiconductor device 1 and object, the thickness of each semiconductor element 2 is such as more than 50 μm, be preferably more than 100 μm, and be such as less than 1000 μm, be preferably less than 700 μm.The maximum length in the direction, face of each semiconductor element 2 is such as more than 1mm, is preferably more than 3mm, and is such as below 50mm, is preferably below 30mm.Interval between adjacent semiconductor element 2 (interval on fore-and-aft direction or left and right directions) be such as more than 0.01mm, is preferably more than 0.05mm, and is such as below 30mm, preferably below 10mm.
Then, the known feedwaies (Handling device) such as such as conveyer belt are utilized to be supplied (carrying) from substrate preparation device 24 to mounting apparatus 51 by the substrate 3 being provided with multiple semiconductor element 2.
Then, as shown in Fig. 2 (d), in mounting apparatus 51, on the substrate 3 being provided with multiple semiconductor element 2, load diaphragm seal 4.
Specifically, as shown in the arrow of Fig. 2 (d), the bottom of arm 37 is declined, the lower surface of the sealant 31 of diaphragm seal 4 is contacted with the upper surface of multiple semiconductor element 2.Then, by the stopping of the attraction action of adsorbent equipment 39, diaphragm seal 4 is made to depart from (separation) from the bottom of arm 37.
Thus, diaphragm seal 4 is placed on the upper surface of multiple semiconductor element 2.
Now, utilize the camera of not shown positioner to detect the position relative to multiple semiconductor element 2 of diaphragm seal 4, adjust the position (positioning process) on the fore-and-aft direction of the bottom of arm 37 and left and right directions based on the position of the diaphragm seal 4 gone out by camera calibration.Specifically, under top view, in the mode making the peripheral end portion of diaphragm seal 4 become the position identical with the peripheral end portion of substrate 3, diaphragm seal 4 is positioned relative to substrate 3.
Thus, prepared substrate 3, multiple semiconductor element 2 and diaphragm seal 4 (preparatory process).
While above-mentioned mounting, start the operation of a part for sealing process.
Specifically, in mounting apparatus 51, implement the preparation heating process of sealing process.
In mounting apparatus 51, the temperature of carrying heater 16 can be controlled as the temperature different from the temperature set in the first stripping off device 49.
In addition, in mounting apparatus 51, because mounting heater 61 is heated to said temperature, diaphragm seal 4 is pre-heated, and in other words, is heated before the formal heating of diaphragm seal 4 in ensuing hot stamping device 26.That is, in preparation heating process, diaphragm seal 4 is prepared heating.According to preparation heating process, the sealant 31 of diaphragm seal 4 becomes soft.
Then, with reference to Fig. 1, the second not shown Handling device is utilized to be carried from mounting apparatus 51 to sealing device 12 by the substrate 3 being placed with diaphragm seal 4.Specifically, as shown in Fig. 3 (e), substrate 3 is placed on the upper surface of the first pressed sheet 27.
Then, in sealing device 12, hot stamping device 26 pairs of substrates 3, semiconductor element 2 and diaphragm seal 4 (comprising the first peel ply 33) is utilized to carry out drop stamping (formal heating process).
Specifically, drop stamping is carried out to the diaphragm seal 4 be clipped between the first pressed sheet 27 and the second pressed sheet 28.In more detail, second pressed sheet 28 is pressed into (carrying out thermo-compressed) relative to the first pressed sheet 27 in the following manner: make the sealant 31 of the softness of diaphragm seal 4 reliably can cover the whole surface (upper surface and side) of semiconductor element 2, further, to the gap-fill sealant 31 between the semiconductor element 2 adjoined each other.In thermo-compressed, to avoid the mode producing space in above-mentioned gap, sealant 31 is filled in above-mentioned gap.
According to above-mentioned drop stamping, the peripheral end portion (fore-and-aft direction both ends and left and right directions both ends) of sealant 31 is from the peripheral end portion (fore-and-aft direction both ends and left and right directions both ends) of the first peel ply 33 and diaphragm seal 4 laterally (outside fore-and-aft direction two and outside left and right directions two, in other words, orthogonal with the pressing direction of hot stamping device 26 direction) stretch out.That is, while carry out drop stamping, while produce the redundance 35 (redundance generation operation) of diaphragm seal 4 to diaphragm seal 4.
The stamping pressure of drop stamping is such as more than 0.01MPa, is preferably more than 0.1MPa, is more preferably more than 1MPa, and is such as below 10MPa.
In addition, to make the second pressed sheet 28 control hot stamping device 26 relative to the mode that the depth of parallelism of the first pressed sheet 27 is less than 100 μm.
In addition, hot stamping device 26 is controlled in the mode be distributed as within 10% of the stamping pressure making the first pressed sheet 27 and the second pressed sheet 28.
In addition, hot stamping device 26 is controlled in the mode within making the Temperature Distribution of the first pressed sheet 27 and the second pressed sheet 28 be 10 DEG C.
In addition, according to above-mentioned drop stamping, when encapsulant is heat-curing resin, the sealant 31 of diaphragm seal 4 can be made to solidify on (C rank) completely.Or, in the manufacturing installation 10 of semiconductor device, also the sealant 31 of diaphragm seal 4 can not be made to solidify on (C rank) completely, and the semiconductor device 1 next illustrated is taken out from the manufacturing installation 10 of semiconductor device, then, utilize such as baking oven etc., the sealant 31 of diaphragm seal 4 is solidified on (C rank) completely.
Therefore, utilize diaphragm seal 4 to seal multiple semiconductor element 2.Thus, semiconductor device 1 is obtained.
Then, utilize retracting device 13 to implement recovery process.
That is, with reference to Fig. 1, first, the first Handling device 14 of sealing device 12 is utilized to be carried to the second stripping off device 50 by semiconductor device 1.Specifically, with reference to Fig. 3 (e), the bottom of arm 37 is extended, in other words, the bottom of arm 37 is declined, the lower surface of adsorbent equipment 39 is contacted with the upper surface of the first peel ply 33 of semiconductor device 1.Then, semiconductor device 1 is adsorbed by the attraction action of adsorbent equipment 39.In other words, semiconductor device 1 is made to be adsorbed in the bottom of arm 37.
Then, the bottom of arm 37 is shortened, in other words, make the bottom of arm 37 rises, by semiconductor device 1 from the first pressed sheet 27 pull-up.
Then, the arm 37 of the first Handling device 14 is forwards moved along guide rail 38, semiconductor device 1 is carried to the second stripping off device 50.
In the handling process of the first Handling device 14 pairs of semiconductor devices 1, carrying heater 16 can be controlled the temperature (the diaphragm seal temperature in recovery process controls operation) of the distortion such as the warpage for the sealant 31 sealing multiple semiconductor element 2 can be suppressed.
In the second stripping off device 50, mechanism for stripping is utilized to be peeled off (the second stripping process as stripping process recovery process) from sealant 31 by the first peel ply 33.
In the second stripping process, the temperature being heated to suppress the warpage etc. of sealant 31 to be out of shape carrying heater 16, specifically, can control as the temperature different from the first pressed sheet 27 and the second pressed sheet 28.
Then, the 3rd not shown Handling device is utilized to be carried from the second stripping off device 50 to the second removing device 18 by the semiconductor device 1 having peeled off the first peel ply 33.Specifically, semiconductor device 1 is contained in housing 22.Specifically, utilize the 3rd not shown Handling device by the substrate of semiconductor device 13 from its on the downside of pull-up while to front side carrying, as shown in Fig. 3 (g), the substrate 3 of semiconductor device 1 is placed on the upper surface of the diapire of housing 22.
Then, in the second removing device 18, utilize cutting member 45 to cut off redundance 35, and shaping (the second removing/trimming as removal step and trimming in recovery process) is carried out to the outer shape of diaphragm seal 4.
In the second removing/trimming, the cutting member 45 carrying out unrolling movement relative to semiconductor device 1 is utilized to cut off redundance 35, while carry out shaping to the outer shape of the sealant 31 of diaphragm seal 4.Specifically, the main shaft of cutting member 45 to be unrolled movement, while make rotary cutter rotate relative to main shaft, to cut and to remove redundance 35 relative to semiconductor device 1.
In addition, never illustrated blow-off outlet blows out the gases such as such as air to semiconductor device 1, and makes the suction device action that is connected with suction port 23.
The cutting swarf produced because of the cutting of redundance 35 to be blown from semiconductor device 1 by the gas that blows out from blow-off outlet and flies, and discharges from housing 22 by being attracted from suction port 23.
Utilize cutting member 45 to cut off redundance 35 while the sealant 31 of diaphragm seal 4 is formed as shape identical with substrate 3 under top view.Thus, the outer shape of semiconductor device 1 is shaped.
Then, as shown in Fig. 3 (h), utilize the 3rd Handling device to be carried from the second removing device 18 to semiconductor device retracting device 40 by the semiconductor device 1 after shaping.
Specifically, in semiconductor device retracting device 40, utilize the 3rd Handling device to accommodate not shown semiconductor device 1.Thus, the box of semiconductor device 1 is contained.
And, the manufacture method of the semiconductor device 1 implemented according to using above-mentioned manufacturing installation 10, prepare diaphragm seal 4 and multiple semiconductor element 2, then, utilize diaphragm seal 4 to be sealed in the lump by multiple semiconductor element 2, then, reclaim diaphragm seal 4 and multiple semiconductor element 2, therefore, it is possible to sealed in the lump by multiple semiconductor element 2, manufacture the semiconductor device 1 possessing multiple semiconductor element 2 easily.Therefore, it is possible to use multiple semiconductor element 2 by the semiconductor device 1 of diaphragm seal 4 good seal according to various object and purposes.
In addition, according to this manufacture method, owing to removing balance 36 (single dotted broken line and Fig. 4 with reference to Fig. 2 (b)) and the redundance 35 (with reference to Fig. 3 (g)) of diaphragm seal 4, therefore, it is possible to the semiconductor device 1 of shape desired by obtaining.
In other words, as shown in the single dotted broken line of Fig. 2 (b), by removing the balance 36 of diaphragm seal 4, in the positioning process shown in Fig. 2 (d), the positioning precision relative to substrate 3 and multiple semiconductor element 2 of hermetic unit 55 can be improved.
In addition, as shown in Fig. 3 (g), by removing the redundance 35 of sealant 31, as shown in Fig. 3 (f), can shaping be carried out to the outer shape of semiconductor device 1 and obtain the high semiconductor device of dimensional accuracy 1.
In addition, according to this manufacture method, according to implemented by not shown positioner, the positioning process that positions relative to multiple semiconductor element 2, can with the multiple semiconductor element 2 of close tolerance seal.Therefore, it is possible to manufacture semiconductor device 1 with high accuracy.
In addition, according to this manufacture method, according to implemented by the carrying heater 16 of sealing device 12 and the second stripping off device 50 and the supports heaters 62 of the second stripping off device 50, control diaphragm seal 4 temperature diaphragm seal temperature control operation, effectively can prevent the distortion of the diaphragm seal 4 after sealing multiple semiconductor element 2.Therefore, it is possible to the semiconductor device 1 of shape desired by manufacturing.
In addition, according to this manufacture method, according to the preparation heating process that carrying heater 16 and the mounting heater 61 by mounting apparatus 51 is implemented, diaphragm seal 4 is made to become soft, then, according to the formal heating process implemented by hot stamping device 26, can reliably sealing semiconductor element 2.Therefore, it is possible to make diaphragm seal 4 easily be shaped as desired shape, and described diaphragm seal 4 can be utilized to carry out sealing semiconductor element 2.Consequently, the semiconductor device 1 of desired shape can be manufactured.
In addition, according to this manufacture method, atmosphere temperature/the humidity conditioner (not shown) of preparation device 11 is utilized to control temperature and/or the humidity of the atmosphere of the diaphragm seal 4 in preparation device 11, therefore, it is possible to adjust the situation of the diaphragm seal 4 before sealing semiconductor element 2, and keep with constant quality and keeping and carrying semiconductor device 1.Therefore, it is possible to improve the precision of the sealing of diaphragm seal 4 pairs of semiconductor elements 2.
According to this manufacture method, in the preparatory process implemented by preparation device 11, remove the redundance 35 of diaphragm seal 4 and shaping carried out to the outer shape of diaphragm seal 4, therefore, it is possible to utilize the diaphragm seal after shaping 4 to carry out sealing semiconductor element 2 with the operability of excellence.
In addition, according to this manufacture method, peel ply 32 can be utilized to protect diaphragm seal 4, and by the first stripping process and the second stripping process, the unwanted peel ply 32 of sealing of semiconductor element 2 can be peeled off from diaphragm seal 4.Specifically, by the first stripping process implemented by the first stripping off device 49, the second peel ply 34 being laminated in the lower surface of sealant 31 can be peeled off from sealant 31.In addition, by the second stripping process implemented by the second stripping off device 50, the first peel ply 33 being laminated in the upper surface of sealant 31 can be peeled off from sealant 31.
In addition, such as, under first pressed sheet 27 and the second pressed sheet 28 of hot stamping device 26 are formed the situation (not being formed as flat situation) of the recess corresponding with the diaphragm seal 4 after sealing and semiconductor element 2 respectively, need by the substrate 3 being placed with diaphragm seal 4 to after being positioned at the position corresponding with the recess of the first pressed sheet 27, substrate 3 is embedded recess.
On the other hand, in the execution mode of Fig. 2, because the first pressed sheet 27 of hot stamping device 26 and the second pressed sheet 28 are formed as tabular, therefore, it is possible to the substrate 3 being placed with diaphragm seal 4 to be placed in the arbitrary position of the upper surface of the first pressed sheet 27.Therefore, it is possible to less operation rapidly and implement sealing process simply.
< variation >
In diaphragm seal 4, also the datum hole used in the positioning process of diaphragm seal 4 (not shown) can be formed in such as with position (preferably, left and right directions both side ends) corresponding with the part that semiconductor element 2 is separated on fore-and-aft direction or left and right directions.Stocking cutter 44 is such as utilized to be formed on diaphragm seal 4 by datum hole.
On the other hand, also the reference mark corresponding with the datum hole of diaphragm seal 4 can be formed on the substrate 3.
And, in the positioning process using positioner, can confirm the situation that the position of the datum hole of diaphragm seal 4 is consistent under top view with the position of the reference mark of substrate 3 to position diaphragm seal 4 relative to the substrate 3 being provided with semiconductor element 2 thus by utilizing camera.
It should be noted that, datum hole can be formed in the mode of through first peel ply 33, sealant 31 and the second peel ply 34, or, also only can be formed at the first peel ply 33.
In addition, loading plate 56 also can possess and carries out along above-below direction the elevating function that is elevated.Thus, in positioning process, can prevent the sealant 31 of diaphragm seal 4 from deforming because being heated.
In addition, in the preparation heating process that carrying heater 16 and the mounting heater 61 by mounting apparatus 51 is implemented, diaphragm seal 4 is configured in upside, and substrate 3 is configured in downside, but, such as, although not shown, but also can be the configuration contrary with it, in other words, diaphragm seal 4 is configured in downside, and substrate 3 is configured in upside.Thereby, it is possible to prevent because preparation heating that the heat that produces is sagging, and such as loading plate 56 grade can be utilized to be bearing in from the downside of diaphragm seal 4 prepare limpen diaphragm seal 4 heating process.Therefore, it is possible to maintain the shape of the sealant 31 of diaphragm seal 4, and can with the operability of excellence by stacked to diaphragm seal 4 and semiconductor element 2.
In addition, in the embodiment illustrated in fig. 4, although hermetic unit 55 and substrate 3 (not shown in the diagram) are formed as toroidal, but the shape of hermetic unit 55 and/or substrate 3 does not limit especially, such as, the suitable shape such as (comprise overlook in roughly rectangular shape) in substantially rectangular shape can be also formed as overlooking.
In addition, in the embodiment of figure 1, preparation device 11 and retracting device 13 separately in the first removing device 17 and the second removing device 18 is set respectively, although implement the first removing/trimming and the second removing/both trimmings, but, such as, also only can implement any one in the first removing/trimming and the second removing/trimming.In this case, although not shown, can to semiconductor device 1 only arrange in the first removing device 17 and the second removing device 18 any one.
In addition, also can not implement the first removing/trimming and the second removing/both trimmings and obtain semiconductor device 1.In this case, can preparation device 11 and retracting device 13 separately in the first corresponding removing device 17 and the second removing device 18 be not set respectively and form preparation device 11 and retracting device 13 respectively.
In addition, although arrange not shown positioner and implement positioning process on the mounting apparatus 51 of Fig. 1, such as also can not implement positioning process and diaphragm seal 4 is placed on multiple semiconductor element 2.In this case, can not positioner be set to semiconductor device 1 and form mounting apparatus 51.
In addition, although the first Handling device 14 in the retracting device 13 of Fig. 3 (e) and Fig. 3 (f) arranged carrying heater 16 and implement diaphragm seal temperature control operation, but, such as, also can not implement diaphragm seal temperature and control operation and reclaim semiconductor device 1.In this case, such as, although not shown, the first Handling device 14 in retracting device 13 can not arranged carrying heater 16 and form the first Handling device 14 of retracting device 13.
In addition, in the execution mode of Fig. 2 (d), although mounting apparatus 51 in preparation device 11 arranges mounting heater 61 and implements preparation heating process, such as also can not implement preparation heating process and implement formal heating process.In this case, can the mounting apparatus 51 in preparation device 11 not arranged mounting heater 61 and form mounting apparatus 51.
In addition, in the embodiment of figure 1, although arrange not shown atmosphere temperature/humidity conditioner and implement atmosphere temperature/humid control operation on preparation device 11, such as also can not implement atmosphere temperature/humid control operation and implement preparatory process.In this case, atmosphere temperature/humidity conditioner can not be set and form preparation device 11.
In addition, in the embodiment of figure 1, although arrange the first removing device 17 and implement the first removing/trimming on preparation device 11, such as, also can not implement the first removing/trimming and prepare diaphragm seal 4.In this case, do not arrange outlet roller 29 and prepare to be shaped as the diaphragm seal 4 of single sheet in advance in carrying device 8 to semiconductor device 1, meanwhile, preparation is installed multiple semiconductor elements 2 on the substrate 3 and implements preparatory process.
In addition; in the embodiment of figure 1, although utilize the first peel ply 33 and the second peel ply 34 to protect sealant 31, also can either party on diaphragm seal 4 in not stacked first peel ply 33 and the second peel ply 34; or both not stacked, and form diaphragm seal 4.
In this case, also can not to semiconductor device 1 arrange in the first stripping off device 49 and the second stripping off device 50 either party, or both is not set, and forms semiconductor device 1.
In addition, in the execution mode of Fig. 2 (d), although diaphragm seal 4 is placed on the substrate 3 being provided with semiconductor element 2 in mounting apparatus 51, but be not limited thereto, such as, also the mounting apparatus 51 shown in Fig. 2 (d) can be doubled as the sealing device 12 shown in Fig. 3 (e), in sealing device 12, on the first pressed sheet 27 substrate 3 being provided with semiconductor element 2 being arranged on hot stamping device 26, then, diaphragm seal 4 is placed in is provided with on the substrate 3 of semiconductor element 2.
In addition, in the mounting process of diaphragm seal 4, not shown decompressor also can be utilized to make the atmosphere (space) in the housing of the atmosphere in mounting apparatus 51 (space) and/or collecting mounting apparatus 51 reduce pressure (becoming vacuum).Specifically, in advance above-mentioned atmosphere (space) is reduced pressure, then, diaphragm seal 4 is placed in and is provided with on the substrate 3 of semiconductor element 2.
Or, also can be first, diaphragm seal 4 is placed in and is provided with on the substrate 3 of semiconductor element 2, then, above-mentioned atmosphere (space) be reduced pressure.
In addition, in the execution mode of Fig. 2 (d), although make substrate 3 for having the writing board shape of tabular surface and being illustrated, the shape of substrate 3 is not limited thereto.Such as, also can on the upper surface of substrate 3, form recess or form through hole on the substrate 3.Recess and through hole comprise the above-mentioned reference mark such as benchmark recess and datum hole, such as, are formed between the semiconductor element 2 that adjoins each other.As recess, such as, the upper portion incision enumerating substrate 3 is the V-shaped valley of substantially V-like shape, the upper portion incision of substrate 3 is the rectangular channel etc. of substantially rectangular shape.Through hole is such as formed in the mode of the thickness direction of through substrate 3.The plan view shape of recess and through hole is formed as suitable shape, does not limit especially.
It should be noted that, although foregoing invention presents as illustrative execution mode of the present invention, this only simple illustration, can not restrictively explain.Self-explantory variation of the present invention is also contained in above-mentioned claims to those skilled in the art.
Industrial applicibility
The present invention uses in the manufacture of various semiconductor device.
Description of reference numerals is as follows:
1 semiconductor device
2 semiconductor elements
3 substrates
4 diaphragm seals
10 manufacturing installations
11 preparation devices
12 sealing devices
13 retracting devices
14 Handling devices
16 carrying heaters
17 first removing devices
18 second removing devices
32 peel plies
33 first peel plies
34 second peel plies
35 redundances
36 balance
41 first apparatus for shaping
43 supporting courses
44 stocking cutters
45 cutting members
49 first stripping off devices
50 second stripping off devices
61 mounting heaters
62 supports heaters
Claims (16)
1. a manufacture method for semiconductor device, being the manufacture method of the semiconductor device obtained by utilizing diaphragm seal to carry out sealing semiconductor element, it is characterized in that, comprising:
Prepare the preparatory process of described diaphragm seal and multiple described semiconductor element;
After described preparatory process, utilize the sealing process that multiple described semiconductor element seals by described diaphragm seal in the lump; And,
After described sealing process, reclaim the recovery process of described diaphragm seal and multiple described semiconductor element.
2. the manufacture method of semiconductor device according to claim 1, is characterized in that,
Also comprise the removal step of the redundance removing described diaphragm seal.
3. the manufacture method of semiconductor device according to claim 1, is characterized in that,
Described preparatory process comprises the positioning process of described diaphragm seal relative to multiple described semiconductor element location.
4. the manufacture method of semiconductor device according to claim 1, is characterized in that,
The diaphragm seal temperature that described recovery process comprises the temperature controlling described diaphragm seal controls operation.
5. the manufacture method of semiconductor device according to claim 1, is characterized in that,
Described sealing process comprises:
In advance to the preparation heating process that described diaphragm seal heats; And,
After described preparation heating process, described diaphragm seal to be heated and by the formal heating process of multiple described semiconductor element encapsulation.
6. the manufacture method of semiconductor device according to claim 1, is characterized in that,
Described preparatory process comprises the temperature of the atmosphere controlling described diaphragm seal and/or the atmosphere temperature/humid control operation of humidity.
7. the manufacture method of semiconductor device according to claim 2, is characterized in that,
In described preparatory process, comprise the redundance that removes described diaphragm seal and the outer shape of described diaphragm seal carried out to the trimming of shaping.
8. the manufacture method of semiconductor device according to claim 1, is characterized in that,
Described diaphragm seal is protected by protecting component,
Described preparatory process and/or described recovery process comprise the stripping process peeled off from described diaphragm seal by described protection component.
9. a manufacturing installation for semiconductor device, is the manufacturing installation utilizing diaphragm seal to carry out the semiconductor device of sealing semiconductor element, it is characterized in that, possess:
Prepare the preparation device of described diaphragm seal and multiple described semiconductor element;
Utilize the sealing device that multiple described semiconductor element seals by ready described diaphragm seal in the lump; And,
Reclaim the retracting device of the multiple described semiconductor element after by described diaphragm seal sealing.
10. the manufacturing installation of semiconductor device according to claim 9, is characterized in that,
Also possesses the removing device of the redundance removing described diaphragm seal.
The manufacturing installation of 11. semiconductor devices according to claim 9, is characterized in that,
Described preparation device possesses the positioner of described diaphragm seal relative to multiple described semiconductor element location.
The manufacturing installation of 12. semiconductor devices according to claim 9, is characterized in that,
Described retracting device possesses the diaphragm seal temperature control equipment of the temperature controlling described diaphragm seal.
The manufacturing installation of 13. semiconductor devices according to claim 9, is characterized in that,
Described sealing device possesses:
In advance to the preparation heater that described diaphragm seal heats; And,
To preparing the described diaphragm seal after heating to heat by the formal heater of multiple described semiconductor element encapsulation.
The manufacturing installation of 14. semiconductor devices according to claim 9, is characterized in that,
Described preparation device possesses the temperature of the atmosphere controlling described diaphragm seal and/or the atmosphere temperature/humidity conditioner of humidity.
The manufacturing installation of 15. semiconductor devices according to claim 10, is characterized in that,
Described preparation device possesses the redundance that removes described diaphragm seal and the outer shape of described diaphragm seal is carried out to the apparatus for shaping of shaping.
The manufacturing installation of 16. semiconductor devices according to claim 9, is characterized in that,
Described diaphragm seal is protected by protecting component,
Described preparation device and/or described retracting device possess the stripping off device peeled off from described diaphragm seal by described protection component.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013014668 | 2013-01-29 | ||
| JP2013-014668 | 2013-01-29 | ||
| JP2013053628A JP2014168028A (en) | 2013-01-29 | 2013-03-15 | Manufacturing method and manufacturing apparatus of semiconductor device |
| JP2013-053628 | 2013-03-15 | ||
| PCT/JP2014/051232 WO2014119445A1 (en) | 2013-01-29 | 2014-01-22 | Production method and production device for semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104956470A true CN104956470A (en) | 2015-09-30 |
Family
ID=51262158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480006560.6A Pending CN104956470A (en) | 2013-01-29 | 2014-01-22 | Production method and production device for semiconductor devices |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP2014168028A (en) |
| KR (1) | KR20150111928A (en) |
| CN (1) | CN104956470A (en) |
| SG (1) | SG11201505565QA (en) |
| TW (1) | TW201438162A (en) |
| WO (1) | WO2014119445A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112621891A (en) * | 2019-09-24 | 2021-04-09 | 泰州隆基乐叶光伏科技有限公司 | Conductive metal foil stamping method and stamping device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101383295A (en) * | 2007-09-03 | 2009-03-11 | 日东电工株式会社 | Process for producing optical semiconductor device and slice used in same process |
| CN102347403A (en) * | 2010-07-27 | 2012-02-08 | 日东电工株式会社 | Method for producing light-emitting diode device |
| US20120052608A1 (en) * | 2010-08-25 | 2012-03-01 | Yoo Cheol-Jun | Phosphor film, method of forming the same, and method of coating phosphor layer on led chips |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5242947B2 (en) * | 2007-05-15 | 2013-07-24 | リンテック株式会社 | Sheet sticking device and sticking method |
| JP5333056B2 (en) * | 2009-08-26 | 2013-11-06 | 富士通セミコンダクター株式会社 | Manufacturing method of semiconductor device |
| JP5156033B2 (en) * | 2010-01-12 | 2013-03-06 | リンテック株式会社 | Manufacturing method of resin-encapsulated semiconductor device |
| US8823186B2 (en) * | 2010-12-27 | 2014-09-02 | Shin-Etsu Chemical Co., Ltd. | Fiber-containing resin substrate, sealed substrate having semiconductor device mounted thereon, sealed wafer having semiconductor device formed thereon, a semiconductor apparatus, and method for manufacturing semiconductor apparatus |
-
2013
- 2013-03-15 JP JP2013053628A patent/JP2014168028A/en not_active Withdrawn
-
2014
- 2014-01-22 KR KR1020157020255A patent/KR20150111928A/en not_active Application Discontinuation
- 2014-01-22 CN CN201480006560.6A patent/CN104956470A/en active Pending
- 2014-01-22 WO PCT/JP2014/051232 patent/WO2014119445A1/en active Application Filing
- 2014-01-22 SG SG11201505565QA patent/SG11201505565QA/en unknown
- 2014-01-28 TW TW103103160A patent/TW201438162A/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101383295A (en) * | 2007-09-03 | 2009-03-11 | 日东电工株式会社 | Process for producing optical semiconductor device and slice used in same process |
| CN102347403A (en) * | 2010-07-27 | 2012-02-08 | 日东电工株式会社 | Method for producing light-emitting diode device |
| US20120052608A1 (en) * | 2010-08-25 | 2012-03-01 | Yoo Cheol-Jun | Phosphor film, method of forming the same, and method of coating phosphor layer on led chips |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112621891A (en) * | 2019-09-24 | 2021-04-09 | 泰州隆基乐叶光伏科技有限公司 | Conductive metal foil stamping method and stamping device |
Also Published As
| Publication number | Publication date |
|---|---|
| SG11201505565QA (en) | 2015-09-29 |
| TW201438162A (en) | 2014-10-01 |
| KR20150111928A (en) | 2015-10-06 |
| JP2014168028A (en) | 2014-09-11 |
| WO2014119445A1 (en) | 2014-08-07 |
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