CN104105575B - 具有基层和抛光表面层的抛光垫 - Google Patents
具有基层和抛光表面层的抛光垫 Download PDFInfo
- Publication number
- CN104105575B CN104105575B CN201280058372.9A CN201280058372A CN104105575B CN 104105575 B CN104105575 B CN 104105575B CN 201280058372 A CN201280058372 A CN 201280058372A CN 104105575 B CN104105575 B CN 104105575B
- Authority
- CN
- China
- Prior art keywords
- basic unit
- surface layer
- polished surface
- polishing pad
- hardness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002344 surface layer Substances 0.000 title claims abstract description 265
- 238000005498 polishing Methods 0.000 title claims abstract description 247
- 239000000758 substrate Substances 0.000 claims abstract description 31
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- 239000010410 layer Substances 0.000 claims description 56
- 239000004814 polyurethane Substances 0.000 claims description 15
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- 239000011800 void material Substances 0.000 claims description 4
- 238000010008 shearing Methods 0.000 claims description 3
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
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- 238000000034 method Methods 0.000 abstract description 32
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- 239000002002 slurry Substances 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
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- 150000002148 esters Chemical class 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000010445 mica Substances 0.000 description 2
- 229910052618 mica group Inorganic materials 0.000 description 2
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 description 2
- KXDHJXZQYSOELW-UHFFFAOYSA-M Carbamate Chemical group NC([O-])=O KXDHJXZQYSOELW-UHFFFAOYSA-M 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 244000137852 Petrea volubilis Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
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- 238000009826 distribution Methods 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
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- 239000000835 fiber Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000007542 hardness measurement Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
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- 238000007790 scraping Methods 0.000 description 1
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- 230000002393 scratching effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- 239000003351 stiffener Substances 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
Claims (30)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610217648.3A CN105773400B (zh) | 2011-11-29 | 2012-05-16 | 具有基层和抛光表面层的抛光垫 |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/306,845 US9067297B2 (en) | 2011-11-29 | 2011-11-29 | Polishing pad with foundation layer and polishing surface layer |
US13/306,845 | 2011-11-29 | ||
US13/306,849 | 2011-11-29 | ||
US13/306,849 US9067298B2 (en) | 2011-11-29 | 2011-11-29 | Polishing pad with grooved foundation layer and polishing surface layer |
PCT/US2012/038211 WO2013081665A2 (en) | 2011-11-29 | 2012-05-16 | Polishing pad with foundation layer and polishing surface layer |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610217648.3A Division CN105773400B (zh) | 2011-11-29 | 2012-05-16 | 具有基层和抛光表面层的抛光垫 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104105575A CN104105575A (zh) | 2014-10-15 |
CN104105575B true CN104105575B (zh) | 2017-11-14 |
Family
ID=46147791
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610217648.3A Active CN105773400B (zh) | 2011-11-29 | 2012-05-16 | 具有基层和抛光表面层的抛光垫 |
CN201280058372.9A Active CN104105575B (zh) | 2011-11-29 | 2012-05-16 | 具有基层和抛光表面层的抛光垫 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610217648.3A Active CN105773400B (zh) | 2011-11-29 | 2012-05-16 | 具有基层和抛光表面层的抛光垫 |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP2785496B1 (zh) |
JP (3) | JP6309453B2 (zh) |
KR (3) | KR101825734B1 (zh) |
CN (2) | CN105773400B (zh) |
SG (2) | SG10201508090WA (zh) |
TW (2) | TWI608898B (zh) |
WO (1) | WO2013081665A2 (zh) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9597769B2 (en) * | 2012-06-04 | 2017-03-21 | Nexplanar Corporation | Polishing pad with polishing surface layer having an aperture or opening above a transparent foundation layer |
KR102350350B1 (ko) | 2014-04-03 | 2022-01-14 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 폴리싱 패드 및 시스템과 이의 제조 및 사용 방법 |
JP6295807B2 (ja) * | 2014-04-28 | 2018-03-20 | 株式会社リコー | 研磨具、及び、研磨装置 |
US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
KR102630261B1 (ko) | 2014-10-17 | 2024-01-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 cmp 패드 구성 |
US10821573B2 (en) | 2014-10-17 | 2020-11-03 | Applied Materials, Inc. | Polishing pads produced by an additive manufacturing process |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
US10875145B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Polishing pads produced by an additive manufacturing process |
US10399201B2 (en) | 2014-10-17 | 2019-09-03 | Applied Materials, Inc. | Advanced polishing pads having compositional gradients by use of an additive manufacturing process |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
CN104827386B (zh) * | 2015-05-25 | 2018-10-12 | 蓝思科技股份有限公司 | 一种用于蓝宝石镜面抛光用磨头 |
US10144115B2 (en) * | 2015-06-26 | 2018-12-04 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of making polishing layer for chemical mechanical polishing pad |
US10092998B2 (en) * | 2015-06-26 | 2018-10-09 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of making composite polishing layer for chemical mechanical polishing pad |
US9969049B2 (en) * | 2015-06-29 | 2018-05-15 | Iv Technologies Co., Ltd. | Polishing layer of polishing pad and method of forming the same and polishing method |
KR20180026779A (ko) * | 2015-07-30 | 2018-03-13 | 제이에이치 로드스 컴퍼니, 인크 | 폴리머 래핑 재료, 매질, 폴리머 래핑 재료를 포함하는 시스템, 및 이들을 사용하고 형성하는 방법 |
JP6584895B2 (ja) * | 2015-09-30 | 2019-10-02 | 富士紡ホールディングス株式会社 | 研磨パッド |
CN108136568B (zh) * | 2015-10-16 | 2020-10-09 | 应用材料公司 | 使用增材制造工艺形成先进抛光垫的方法和设备 |
US9868185B2 (en) * | 2015-11-03 | 2018-01-16 | Cabot Microelectronics Corporation | Polishing pad with foundation layer and window attached thereto |
CN105500183B (zh) * | 2015-11-26 | 2018-08-10 | 上海集成电路研发中心有限公司 | 一种研磨垫及其使用周期检测方法 |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
EP3421174B1 (en) * | 2016-02-26 | 2023-08-09 | Fujimi Incorporated | Polishing method |
JP2017177265A (ja) * | 2016-03-29 | 2017-10-05 | 株式会社フジミインコーポレーテッド | 研磨パッド |
TWI629297B (zh) | 2016-07-05 | 2018-07-11 | 智勝科技股份有限公司 | 研磨層及其製造方法以及研磨方法 |
KR101884238B1 (ko) * | 2017-01-20 | 2018-08-02 | 에스케이하이닉스 주식회사 | 연마 시스템 및 이를 이용한 평탄화 방법 |
TWI757410B (zh) * | 2017-01-20 | 2022-03-11 | 美商應用材料股份有限公司 | 用於cmp應用的薄的塑膠拋光用具 |
KR101916119B1 (ko) * | 2017-02-06 | 2019-01-30 | 주식회사 리온에스엠아이 | 화학적 기계 연마용 연마패드 |
CN109153107A (zh) * | 2017-03-31 | 2019-01-04 | 古河电气工业株式会社 | 抛光垫 |
JP7273796B2 (ja) * | 2017-08-25 | 2023-05-15 | スリーエム イノベイティブ プロパティズ カンパニー | 表面突起研磨パッド |
US11685013B2 (en) | 2018-01-24 | 2023-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing pad for chemical mechanical planarization |
JP6564106B2 (ja) * | 2018-04-23 | 2019-08-21 | 株式会社三共 | 遊技機 |
JP7026942B2 (ja) * | 2018-04-26 | 2022-03-01 | 丸石産業株式会社 | 研磨パッド用の下敷及び該下敷を使用する研磨方法 |
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JP2015503232A (ja) | 2015-01-29 |
KR20160098520A (ko) | 2016-08-18 |
JP6309453B2 (ja) | 2018-04-11 |
CN105773400A (zh) | 2016-07-20 |
EP2785496B1 (en) | 2021-11-24 |
KR20140097486A (ko) | 2014-08-06 |
SG11201402224WA (en) | 2014-09-26 |
CN104105575A (zh) | 2014-10-15 |
CN105773400B (zh) | 2019-10-25 |
JP2016104511A (ja) | 2016-06-09 |
JP2018082213A (ja) | 2018-05-24 |
KR20150103327A (ko) | 2015-09-09 |
WO2013081665A2 (en) | 2013-06-06 |
SG10201508090WA (en) | 2015-10-29 |
TW201534429A (zh) | 2015-09-16 |
EP2785496A2 (en) | 2014-10-08 |
JP6200530B2 (ja) | 2017-09-20 |
TW201321131A (zh) | 2013-06-01 |
JP6805191B2 (ja) | 2020-12-23 |
TWI608898B (zh) | 2017-12-21 |
TWI513545B (zh) | 2015-12-21 |
KR101819539B1 (ko) | 2018-01-17 |
KR101685678B1 (ko) | 2016-12-12 |
KR101825734B1 (ko) | 2018-02-05 |
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