SG10201508090WA - Polishing pad with foundation layer and polishing surface layer - Google Patents

Polishing pad with foundation layer and polishing surface layer

Info

Publication number
SG10201508090WA
SG10201508090WA SG10201508090WA SG10201508090WA SG10201508090WA SG 10201508090W A SG10201508090W A SG 10201508090WA SG 10201508090W A SG10201508090W A SG 10201508090WA SG 10201508090W A SG10201508090W A SG 10201508090WA SG 10201508090W A SG10201508090W A SG 10201508090WA
Authority
SG
Singapore
Prior art keywords
layer
polishing
surface layer
foundation
polishing pad
Prior art date
Application number
SG10201508090WA
Inventor
William C Allison
Diane Scott
Paul Andre Lefevre
James P Lacasse
Alexander William Simpson
Original Assignee
Nexplanar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/306,849 external-priority patent/US9067298B2/en
Priority claimed from US13/306,845 external-priority patent/US9067297B2/en
Application filed by Nexplanar Corp filed Critical Nexplanar Corp
Publication of SG10201508090WA publication Critical patent/SG10201508090WA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/205Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/22Lapping pads for working plane surfaces characterised by a multi-layered structure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0009Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG10201508090WA 2011-11-29 2012-05-16 Polishing pad with foundation layer and polishing surface layer SG10201508090WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/306,849 US9067298B2 (en) 2011-11-29 2011-11-29 Polishing pad with grooved foundation layer and polishing surface layer
US13/306,845 US9067297B2 (en) 2011-11-29 2011-11-29 Polishing pad with foundation layer and polishing surface layer

Publications (1)

Publication Number Publication Date
SG10201508090WA true SG10201508090WA (en) 2015-10-29

Family

ID=46147791

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201508090WA SG10201508090WA (en) 2011-11-29 2012-05-16 Polishing pad with foundation layer and polishing surface layer
SG11201402224WA SG11201402224WA (en) 2011-11-29 2012-05-16 Polishing pad with foundation layer and polishing surface layer

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG11201402224WA SG11201402224WA (en) 2011-11-29 2012-05-16 Polishing pad with foundation layer and polishing surface layer

Country Status (7)

Country Link
EP (1) EP2785496B1 (en)
JP (3) JP6309453B2 (en)
KR (3) KR101819539B1 (en)
CN (2) CN105773400B (en)
SG (2) SG10201508090WA (en)
TW (2) TWI513545B (en)
WO (1) WO2013081665A2 (en)

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US10821573B2 (en) 2014-10-17 2020-11-03 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US10875145B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
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CN113579992A (en) * 2014-10-17 2021-11-02 应用材料公司 CMP pad construction with composite material properties using additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
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JP7026942B2 (en) * 2018-04-26 2022-03-01 丸石産業株式会社 Underlay for polishing pad and polishing method using the underlay
CN108972381A (en) * 2018-07-26 2018-12-11 成都时代立夫科技有限公司 A kind of CMP pad edge sealing process
CN109015435A (en) * 2018-09-10 2018-12-18 台山市远鹏研磨科技有限公司 A kind of diamond tower sand paper
CN109434568A (en) * 2018-10-23 2019-03-08 青岛韬谱光学科技有限公司 A kind of optical device polishing method of the high high roughness of face type
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WO2020242172A1 (en) * 2019-05-29 2020-12-03 한국생산기술연구원 Chemical mechanical polishing pad having pattern structure
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CN114701105B (en) * 2021-04-27 2024-04-19 宁波赢伟泰科新材料有限公司 Chemical mechanical polishing pad and preparation method thereof
CN113334243B (en) * 2021-06-03 2023-03-31 万华化学集团电子材料有限公司 Chemical mechanical polishing pad, preparation method and application thereof
KR102508565B1 (en) * 2021-07-01 2023-03-10 에스씨엠티 주식회사 Double-layered Polishing Pad for Planarization Process and Manufacturing Method Thereof
JP7441916B2 (en) * 2021-10-12 2024-03-01 エスケー エンパルス カンパニー リミテッド Polishing pad and method for manufacturing semiconductor devices using the same

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Also Published As

Publication number Publication date
KR20140097486A (en) 2014-08-06
SG11201402224WA (en) 2014-09-26
CN105773400A (en) 2016-07-20
KR20150103327A (en) 2015-09-09
TWI608898B (en) 2017-12-21
EP2785496B1 (en) 2021-11-24
KR101825734B1 (en) 2018-02-05
EP2785496A2 (en) 2014-10-08
KR101819539B1 (en) 2018-01-17
TWI513545B (en) 2015-12-21
JP2015503232A (en) 2015-01-29
KR20160098520A (en) 2016-08-18
CN104105575A (en) 2014-10-15
JP6200530B2 (en) 2017-09-20
JP6309453B2 (en) 2018-04-11
WO2013081665A2 (en) 2013-06-06
KR101685678B1 (en) 2016-12-12
CN104105575B (en) 2017-11-14
JP2018082213A (en) 2018-05-24
CN105773400B (en) 2019-10-25
TW201534429A (en) 2015-09-16
TW201321131A (en) 2013-06-01
JP2016104511A (en) 2016-06-09
JP6805191B2 (en) 2020-12-23

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