CN103811436A - 改进堆叠式封装结构中的逻辑芯片的热性能 - Google Patents

改进堆叠式封装结构中的逻辑芯片的热性能 Download PDF

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CN103811436A
CN103811436A CN201310556758.9A CN201310556758A CN103811436A CN 103811436 A CN103811436 A CN 103811436A CN 201310556758 A CN201310556758 A CN 201310556758A CN 103811436 A CN103811436 A CN 103811436A
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substrate
thermal land
power
package substrate
heat conduction
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翟军
亚伊普拉卡什·基帕尔卡蒂
尚塔努·卡尔丘里
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Nvidia Corp
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Abstract

公开了改进堆叠式封装结构中的逻辑芯片的热性能。本发明的实施例提供了其中低功率芯片可以邻近高功率芯片垂直定位而不遭受过度加热的影响的IC***。在一个实施例中，IC***包括第一衬底、布置在第一衬底的第一侧面上的高功率芯片、布置在第一衬底的第二侧面上的导热焊盘、形成在第一衬底中的一个或多个导热特征，其中导热特征热连接高功率芯片和导热焊盘，以及附接到导热焊盘的表面的散热器，其中散热器与导热焊盘热通信。通过使导热特征穿过第一衬底形成以热连接高功率芯片和导热焊盘，由高功率芯片所生成的热量可以有效地耗散到散热器中。

Description

改进堆叠式封装结构中的逻辑芯片的热性能
技术领域
本发明的实施例总地涉及集成电路芯片封装，并且更具体地，涉及具有高功率芯片和低功率芯片的堆叠式封装（POP）封装***。
背景技术
随着电子工业的发展，存在对于具有经改进的性能的较小电子设备的渐增的需求。为了达到电子部件的较小占用面积（footprint）和较高集成密度，已经开发所谓的“堆叠式封装（POP）”技术。POP是用来利用在其之间路由信号的界面来将多个基于引线框的半导体封装垂直叠加在彼此上的三维封装技术。
最小化封装的厚度已是POP技术的成功实现方案的挑战，因为在包含在封装中的芯片和其他器件的热管理和器件的性能之间一般存在权衡。特别地，通过将IC封装的存储器芯片、无源器件和其他低功率部件尽可能地靠近IC封装中的中央处理单元（CPU）和其他高功率器件来放置，加速了在IC封装中的器件之间的通信并且降低了封装寄生。然而，已知由较高功率芯片所生成的热不利地影响定位在附近的存储器芯片和其它器件。因此，当并入单个IC封装时将存储器芯片和无源器件直接叠加在CPU或其它高功率芯片上或在CPU或其它高功率芯片下面不具有热可行性，因为这类配置必然限制高功率芯片的功率或者影响存储器芯片的性能。
如前述所示，本领域存在对于具有较大集成电路密度以及封装大小方面的相对应的降低的封装***的需要。更特别地，存在对于防止芯片之间的传热的垂直叠加中的高功率芯片和低功率芯片安排的需要。
发明内容
本发明的实施例阐述了其中一个或多个低功率芯片可以邻近高功率芯片进行定位而不遭受过度加热的影响的IC***。在一个实施例中，IC***包括安装在第一封装衬底上的高功率芯片，以及布置在定位在第一封装衬底上方的第二封装衬底上的低功率芯片以形成叠加。导热焊盘附接到第一封装衬底的底面，并且与定位在第一封装衬底下面的印刷电路板的一部分热通信。多个导热特征穿过第一封装衬底形成以热连接高功率芯片和导热焊盘。
本发明的一个优势在于，在同一IC***中存储器芯片或其他低功率芯片可以紧密邻近安装在封装衬底上的高功率芯片进行定位而不被高功率芯片过度加热。通过使导热特征穿过第一封装衬底形成以热连接高功率芯片和定位在第一封装衬底和印刷电路板之间（并且与第一封装衬底和印刷电路板热通信）的导热焊盘，由高功率芯片所生成的热量可以有效地耗散到用作IC***的散热器的印刷电路板中。以这种方式，延长了低功率芯片的寿命。
附图说明
因此，可以详细地理解本发明的上述特征，并且可以参考实施例得到对如上面所简要概括的本发明更具体的描述，其中一些实施例在附图中示出。然而，应当注意的是，附图仅示出了本发明的典型实施例，因此不应被认为是对其范围的限制，本发明可以具有其他等效的实施例。
图1是根据本发明的一个实施例的、集成电路（IC）***的示意性剖视图。
图2是示出导热焊盘关于焊料球的示例性安排的第一封装衬底的示意性底视图。
为了清晰起见，同样的参考数字在适用的地方已经用来指明各图之间公共的同样的元件。应预期到的是，一个实施例的特征可以包含在其它实施例中而无需进一步陈述。
具体实施方式
图1是根据本发明的一个实施例的、集成电路（IC）***100的示意性剖视图。IC***100总地包括多个IC芯片和/或其它分立的微电子部件，并且配置为将所述芯片和部件电地并且机械地连接到印刷电路板190。IC***可以是垂直组合，即一个或多个高功率芯片101和一个或多个低功率芯片102的叠加配置。在本公开中，高功率芯片101可以是高功率处理器，诸如中央处理单元（CPU）、图形处理单元（GPU）、应用处理器或其它逻辑设备、或能够在操作期间生成足以不利地影响放置在IC***100中的无源器件或低功率芯片101的性能的热量的任何IC芯片。例如，高功率芯片典型地是在正常操作期间生成至少10W热量或更多的一个芯片。相反，低功率芯片是在操作期间不生成足以不利地影响邻近IC芯片或器件的性能的热量的一个芯片。例如，低功率芯片是在正常操作期间生成近似大约1W热量即不多于大约5W热量的任何IC芯片。低功率芯片可以是放置在IC***100中的无源器件，例如存储器器件，诸如RAM或闪存、I/O芯片、或在正常操作中不生成超过5W的任何其它芯片。
在图1示出的实施例中，IC***100包括布置在第一封装衬底110的顶面143上的高功率芯片和布置在第二封装衬底140的顶面106上的一组低功率芯片102。第一封装衬底110大致平行于第二封装衬底140并且与第二封装衬底140相对，高功率芯片101夹在第一封装衬底110和第二封装衬底140之间。第二封装衬底140布置在第一封装衬底110的顶面143上方并且通过电连接142电连接到第一封装衬底110。在第二封装衬底140和第一封装衬底110之间的电连接142可以使用本领域公知的任何技术上可行的方法制成，诸如焊料凸块或焊料球。电连接142可以与形成在第一封装衬底110的顶面143上的相对应的结合焊盘145物理接触。应预期到的是，在第二封装衬底140和第一封装衬底110之间的电通信还可以通过其它结合技术进行，诸如倒装式结合（flip-chip bonding）技术或引脚网格阵列（PGA）技术。
为了保护芯片102，安装在第二封装衬底140上的低功率芯片102可以密封在模塑材料148中。高功率芯片101通过诸如微凸块的电连接104与第一封装衬底110电通信。如果期望的话，可以通过利用密封材料108保护电连接104来改进电连接104的可靠性。模塑或密封材料可以是树脂，诸如环氧树脂、丙烯酸树脂、硅树脂、聚氨酯树脂、聚酰胺树脂、聚酰亚胺树脂等。任何其它技术上可行的封装技术可以用来保护低功率芯片102或高功率芯片101到第一封装衬底110的电连接104。尽管未示出，但是应预期到的是，模塑材料148的、背对第二封装衬底140的顶面150可以附接到散热器或其它冷却机构来增强IC***100的热传递。
在叠加配置中，低功率芯片102安装在高功率芯片101对面，并且经由形成在第一封装衬底110中的导电过孔123和导电线路114电连接到高功率芯片101和PCB190。在高功率芯片101和第一封装衬底110之间的电连接可以使用本领域公知的任何技术上可行的方法制成。应注意的是，导电线路114和导电过孔123以及其配置是可以用来将高功率芯片101电连接到外部部件的示例性方法。取代导电线路114和导电过孔123的使用或除了它之外，可以使用具有不同布线安排/配置的任何公知的电连接。
在图1示出的实施例中，导热焊盘160附接到第一封装衬底110的底面147。下文要讨论的导热特征125和导热焊盘160配置为促进从高功率芯片101到PCB190的热流动。导热焊盘160可以通过粘结层162来固定到第一封装衬底110。粘结层162可以是包括以下各项中的至少一个的金属粘结层：TiN、Cu、Ni、Ag、Ti、Ta、W、TiN、WN、TiW或诸如导热环氧树脂的任何适合的材料。导热焊盘160可以由金属制成，诸如铜、铝、金、银、铁、两个或更多个元素的合金、聚合物或不锈钢。在一个示例中，导热焊盘160由铜制成。
导热焊盘160可以布置在第一封装衬底110的底面147上的中心区域处。导热焊盘160的位置可以根据导热特征125来调节。导热焊盘160可以占据第一封装衬底110的大约10%到大约100%的表面积。在一个示例中，导热焊盘160覆盖第一封装衬底110的大约20%到大约60%的表面积。在某些实施例中，使导热焊盘160导电使得它可以用作在第一封装衬底110和PCB190之间的电连接可能是有利的。换句话说，导热焊盘160可以代替安装到第一封装衬底110的底面147上、用于将第一封装衬底110电连接到PCB190的一些焊料球180。
图2是示出导热焊盘160关于焊料球180的示例性安排的第一封装衬底110的示意性底视图。应预期到的是，导热焊盘160可以取决于对IC***100的热耗散和/或电连接的需要而变化大小。
第一封装衬底110可以包括嵌入或形成在其中的一个或多个导热特征125用于传热的目的。导热特征125配置为向PCB190传导由高功率芯片101所生成的热量，所述PCB190用作IC***100的散热器。导热特征125可以以任何期望的间隔彼此平行。在如示出的图1的实施例中，导热特征125是垂直穿过第一封装衬底110的过孔。应预期到的是，只要由高功率芯片101所生成的热量可以通过第一封装衬底110有效传送到附接到PCB190的导热焊盘160，则导热特征125可以是本领域中的任何公知结构并且可以以任何适合的安排。在导热特征125是过孔的情况下，它们可以通过激光打孔和填充诸如铜的热敏介质来形成。任何其它适合的技术可以用来形成导热特征125。导热特征125可以以不干扰电线路或导电过孔123、或第一封装衬底110中的任何其它特征的方式来形成和安排。尽管示出了四个导热特征125，但是应该理解，可以使用任何数目的导热特征125。
在各实施例中，导热特征125可以具有大约200μm到大约600μm的高度“H1”，例如大约400μm。导热焊盘160和粘结层162可以具有大约50μm到大约250μm的高度“H2”，例如大约150μm。
导热特征125热连接高功率芯片101和导热焊盘160。因此，由高功率芯片101所生成的热量向下通过第一封装衬底110耗散到导热焊盘160并且随后到PCB190，而不是不利地影响定位在高功率芯片101的上方的低功率芯片102。如果期望的话，可以使一些或所有导热特征导电使得它们可以用来将电力和/或接地信号从PCB直接提供到高功率芯片101。在这类情况下，导热特征可以包括铜、铝、金、银或两个或更多个电传导元素的合金。
应预期到的是，可以设计本发明的实施例而不脱离其基本范围。例如，取代将高功率芯片101安装在第一封装衬底110的顶面143上，高功率芯片101可以嵌入第一封装衬底110内，导热特征125和导热焊盘160以如上文所讨论的、促进到PCB190的热流动的类似的方式进行配置。
第一封装衬底110给IC***100提供结构刚性和用于在高功率芯片101、低功率芯片102和PCB190之间路由输入和输出信号以及电力的电接口。尽管未示出，但是应预期到的是，第一封装衬底110可以是包括绝缘层的叠加的层压衬底。如上文所讨论的，导电线路114和导电过孔123可以形成在绝缘层之间以在高功率芯片101、低功率芯片102和PCB190之间提供电通信。
可用来制成第一封装衬底110和第二封装衬底140的适合的材料包括但不限于FR-2和FR-4，其是来自三菱瓦斯化学（Mitsubishi Gas andChemical）的树脂基双马来酰亚胺三嗪树脂（resin-based Bismaleimide-Triazine（BT））以及传统基于环氧的层压板。FR-2是具有在大约0.2W/(K-m)的范围中的导热性的合成树脂胶纸。FR-4是具有环氧树脂粘合剂的编织玻璃纤维布，其具有在大约0.35W/(K-m)的范围中的导热性。BT/环氧层压封装衬底也具有在大约0.35W/(K-m)的范围中的导热性。也可以使用具有小于大约0.5W/(K-m)的导热性的其它适合刚性的、电隔离的并且热绝缘的材料。
总而言之，本发明的实施例阐述了其中一个或多个低功率芯片垂直定位在同一IC***中的、邻近该低功率芯片而安装在封装衬底上的一个或多个高功率芯片的上方而不遭受过度加热的影响的IC***。通过使导热特征穿过封装衬底形成并且热连接到附接到封装衬底的底面的导热焊盘，由高功率芯片所生成的热量可以有效地耗散到PCB中，所述PCB与导热焊盘热通信并且用作IC***的散热器。因此，防止或最小化了从高功率芯片到低功率芯片的传热。因此，延长了存储器芯片的寿命。
尽管前述针对本发明的实施例，但是可以设计本发明的其它和进一步的实施例而不脱离本发明的基本范围，并且本发明的基本范围由下面的权利要求来确定。

Claims (10)

1.一种集成电路***，包括：
第一衬底；
布置在所述第一衬底的第一侧面上的高功率芯片；
布置在所述第一衬底的第二侧面上的导热焊盘，所述第二侧面与所述第一侧面平行并且相对；
形成在所述第一衬底中的一个或多个导热特征，其中所述一个或多个导热特征热连接所述高功率芯片和所述导热焊盘；以及
附接到所述导热焊盘的表面的散热器，其中所述散热器与所述导热焊盘热通信。
2.根据权利要求1所述的***，进一步包括：
布置在第二衬底上的低功率芯片，其中所述第二衬底邻近所述第一衬底的第一侧面进行定位。
3.根据权利要求1所述的***，其中所述导热焊盘定位在所述第一衬底的中心区域处。
4.根据权利要求1所述的***，其中所述导热焊盘占据所述第一衬底的大约10%到大约100%的表面积。
5.根据权利要求1所述的***，其中所述导热焊盘包括铜、铝、金、银、铁、两个或更多个元素的合金、聚合物或不锈钢。
6.根据权利要求1所述的***，其中所述一个或多个导热特征是垂直穿过所述第一衬底的过孔。
7.根据权利要求1所述的***，其中所述一个或多个导热特征是电传导的。
8.一种集成电路***，包括：
第一衬底，所述第一衬底具有第一侧面和平行于所述第一侧面的第二侧面；
嵌入所述第一衬底内的高功率芯片；
布置在所述第一衬底的第二侧面上的导热焊盘；
形成在所述第一衬底中的一个或多个导热特征，其中所述一个或多个导热特征热连接所述高功率芯片和所述导热焊盘；以及
附接到所述导热焊盘的表面的散热器，其中所述散热器与所述导热焊盘热通信。
9.根据权利要求8所述的***，进一步包括：
布置在第二衬底上的低功率芯片，其中所述第二衬底相对定位在所述第一衬底的第一侧面上方并且与所述第一衬底电通信。
10.根据权利要求8所述的***，其中所述导热焊盘是电传导的。
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Application publication date: 20140521