CN103456869B - 发光装置、用于形成多方向出光的发光二极管芯片及其蓝宝石基板 - Google Patents

发光装置、用于形成多方向出光的发光二极管芯片及其蓝宝石基板 Download PDF

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Publication number
CN103456869B
CN103456869B CN201310191958.9A CN201310191958A CN103456869B CN 103456869 B CN103456869 B CN 103456869B CN 201310191958 A CN201310191958 A CN 201310191958A CN 103456869 B CN103456869 B CN 103456869B
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Prior art keywords
light
emitting diode
backlight unit
diode chip
sapphire substrate
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CN201310191958.9A
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CN103456869A (zh
Inventor
潘锡明
郑惟纲
黄知澍
李承鸿
叶时有
蒲计志
杨程光
汤士杰
洪祥富
王子翔
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Epistar Corp
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Epistar Corp
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Priority claimed from TW101125599A external-priority patent/TWI479695B/zh
Priority claimed from TW101131198A external-priority patent/TW201409775A/zh
Priority claimed from TW101131643A external-priority patent/TWI464908B/zh
Priority claimed from TW101132187A external-priority patent/TWI490432B/zh
Priority claimed from TW101132185A external-priority patent/TWI577919B/zh
Priority claimed from TW102116429A external-priority patent/TWI533468B/zh
Priority claimed from TW102116650A external-priority patent/TWI511279B/zh
Priority to CN201610836364.2A priority Critical patent/CN106169467B/zh
Application filed by Epistar Corp filed Critical Epistar Corp
Publication of CN103456869A publication Critical patent/CN103456869A/zh
Publication of CN103456869B publication Critical patent/CN103456869B/zh
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    • H—ELECTRICITY
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    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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    • F21V21/00—Supporting, suspending, or attaching arrangements for lighting devices; Hand grips
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Abstract

本发明提供一种用于形成多方向出光的发光二极管芯片的蓝宝石基板，该蓝宝石基板包括一成长面与一第二主表面彼此相对设置。蓝宝石基板的厚度大于或等于200微米。

Description

发光装置、用于形成多方向出光的发光二极管芯片及其蓝宝石基板
技术领域
本发明关于一种用于形成多方向出光的发光二极管芯片的蓝宝石基板，尤其是指一种发光装置、用于形成多方向出光的发光二极管芯片及其蓝宝石基板。
背景技术
发光二极管(light emitting diode, LED)本身所发出来的光是偏向一种指向性的光源，并不是像一般市场出售的灯泡为一种发散型的光源，因此在应用上会受到限制。举例说明，在一般室内外照明的灯具上的应用并无法达到所需要的光型。另外，已知发光二极管芯片仅可单面发光，因此具有较低的发光效率。
发明内容
本发明的一目的在于提供一发光装置、用于形成多方向出光的发光二极管芯片及其蓝宝石基板，以提升发光效率、改善光型并节省成本。
为解决上述技术问题，本发明所采用的技术方案为：
一种用于形成多方向出光的发光二极管芯片的蓝宝石基板，蓝宝石基板上形成多个多方向出光的发光二极管结构，且所述蓝宝石基板包括：
一成长面，用于设置所述发光二极管结构；
一第二主表面，相背于所述成长面设置；
一第一连接导线以及一第二连接导线，均设置于所述成长面且与发光二极管结构电性连接；
一第一连接电极以及一第二连接电极，均设置于所述蓝宝石基板的至少一边缘，第一连接电极与第一连接导线电性耦接，第二连接电极与第二连接导线电性耦接，如此形成一电性端口以与电源电性连接，且所述蓝宝石基板的厚度大于或等于200微米。
作为本发明的进一步改进，所述第二主表面具有一非平面结构。
作为本发明的进一步改进，所述蓝宝石基板还包括至少一类金刚石碳膜，设置于所述成长面或所述第二主表面上。
作为本发明的进一步改进，所述蓝宝石基板还包括至少一光学膜，设置于所述类金刚石碳膜与所述第二主表面之间。
作为本发明的进一步改进，所述成长面或所述第二主表面的面积为设置于其上的至少一发光二极管结构的一发光面的总面积5倍以上。
作为本发明的进一步改进，所述蓝宝石基板还包括至少一波长转换层设置于所述第二主表面上，且所述波长转换层至少包含一种材质以上的荧光粉。
作为本发明的进一步改进，所述蓝宝石基板还包括一反射镜或滤波器，设置于所述第二主表面上或成长面上。
作为本发明的进一步改进，所述反射镜或滤波器包括多层具有不同折射率的介电薄膜。
作为本发明的进一步改进，所述反射镜包括多层金属氧化物。
作为本发明的进一步改进，所述蓝宝石基板对波长范围在420纳米到470纳米的光线的穿透率大于或等于70%。
作为本发明的进一步改进，所述第一连接电极与所述第二连接电极相对设置于所述蓝宝石基板两端或同侧。
作为本发明的进一步改进，所述蓝宝石基板上至少设有一插脚，且所述插脚上至少设有一电性端口。
作为本发明的进一步改进，包括所述的蓝宝石基板，以及若干个发光二极管结构，设置于所述成长面上，并与未设置所述发光二极管结构的部分所述成长面形成可发光的一第一主表面，若干个所述发光二极管结构均具有一第一电极与一第二电极；
所述发光二极管结构中至少一个所述发光二极管结构的发光方向包括经过所述蓝宝石基板并从所述第二主表面出光。
作为本发明的进一步改进，包括所述的蓝宝石基板，以及至少一发光二极管结构，设置于所述成长面上，并与未设置所述发光二极管结构的部分所述成长面形成可发光的一第一主表面，所述发光二极管结构具有一第一电极与一第二电极；
所述发光二极管结构的出光角度大于180度，且所述发光二极管结构所发出的至少部分光线穿透所述蓝宝石基板，并从所述第二主表面出光。
作为本发明的进一步改进，还包括波长转换层设置于所述第一主表面与所述第二主表面上，且不同位置的所述波长转换层所含荧光粉比例为1比0.5至1比3。
作为本发明的进一步改进，还包括波长转换层设置于所述发光二极管结构与所述第二主表面上，且不同位置的所述波长转换层所含荧光粉比例为1比0.5至1比3。
作为本发明的进一步改进，所述蓝宝石基板还包括一第一连接电极与一第二连接电极分别与所述第一电极与所述第二电极电性耦接，且所述波长转换层不覆盖所述第一连接电极与所述第二连接电极。
作为本发明的进一步改进，所述蓝宝石基板还包括一反射镜或滤波器，设置于所述第二主表面上或成长面上。
作为本发明的进一步改进，还包括若干个发光二极管结构设置于第二主表面，所述成长面与所述第二主表面上的所述发光二极管结构对应交错排列。
作为本发明的进一步改进，包括所述的多方向出光的发光二极管芯片，以及一承载座，所述发光二极管芯片设置于所述承载座上。
作为本发明的进一步改进，所述发光二极管芯片与所述承载座间有一第一夹角，所述第一夹角角度范围包括30度至150度。
作为本发明的进一步改进，还包括一支架，所述支架与所述承载座耦接，且所述发光二极管芯片固定于所述支架上。
作为本发明的进一步改进，所述支架可弯折，使所述发光二极管芯片与所述承载座间有一第一夹角。
作为本发明的进一步改进，包括若干个所述多方向出光的发光二极管芯片，且至少部分所述发光二极管芯片以点对称或线对称方式设置于所述承载座上。
作为本发明的进一步改进，至少包括一如权利要求15或16所述的多方向出光的发光二极管芯片，以及一支架，所述发光二极管芯片设置于所述支架上。
作为本发明的另一种实施方式，为一种多方向出光的发光二极管芯片，包括：
一透明基板，具有一成长面与一第二主表面彼此相对设置；以及
若干个发光二极管结构，设置于所述成长面上，并与未设置所述发光二极管结构的部分所述成长面形成可发光的一第一主表面，其中所述若干个发光二极管结构均具有一第一电极与一第二电极；
其中所述若干个发光二极管结构中至少一个所述发光二极管结构的发光方向包括经过所述透明基板并从所述第二主表面出光。
作为本发明的进一步改进，还包括：
一绝缘层，至少设置于部分所述若干个发光二极管结构上；以及
一导电图案，设置于所述绝缘层上，并与至少部分所述第一电极及至少部分所述第二电极电性连接；
其中各所述发光二极管结构包括：
一第一半导体层，设置于所述透明基板上；
一主动层，设置于所述第一半导体层上；以及
一第二半导体层，设置于所述主动层上。
作为本发明的进一步改进，所述发光二极管结构还包括一缓冲层，设置于所述第一半导体层与所述透明基板之间。
作为本发明的进一步改进，所述第一半导体层、所述主动层、所述第二半导体层与所述缓冲层的材料包括三A族的氮化物。
作为本发明的进一步改进，还包括至少一波长转换层，设置于所述发光二极管结构、所述第一主表面或所述第二主表面上，所述波长转换层至少部分吸收所述若干个发光二极管结构所发出的光线，并转换为不同波长范围的光线。
作为本发明的进一步改进，所述波长转换层设置于所述第一主表面与所述第二主表面上，且上述不同位置的所述波长转换层所含荧光粉比例为1比0.5至1比3。
作为本发明的进一步改进，各所述发光二极管结构的功率在0.2瓦特以下。
作为本发明的进一步改进，所述透明基板的材质包括选自氧化铝(Al2O3)、含有氧化铝的蓝宝石、碳化硅(SiC)、玻璃、塑料或橡胶所组成的其中任一种。
作为本发明的进一步改进，所述第二主表面具有一非平面结构。
作为本发明的进一步改进，所述芯片还包括一类金刚石碳膜，设置于所述成长面或所述第二主表面上。
作为本发明的进一步改进，还包括一光学膜，设置于所述透明基板与所述类金刚石碳膜之间。
作为本发明的进一步改进，至少一个所述发光二极管结构的出光角度大于180度。
作为本发明的进一步改进，所述透明基板材质包括蓝宝石且厚度大于或等于200微米。
作为本发明的进一步改进，所述第一电极与所述第二电极分别与所述透明基板上的一第一连接导线以及一第二连接导线电性连接。
作为本发明的进一步改进，所述第一主表面与所述第二主表面的光线色温差异等于或小于1500K。
作为本发明的进一步改进，所述透明基板对波长范围大于或等于420纳米，或小于或等于470纳米的光线，所述基板的光穿透率大于或等于70%。
作为本发明的进一步改进，其中各所述发光二极管结构均具有一发光面，且所述第一主表面或所述第二主表面的面积为该些发光二极管结构的该些发光面的总面积5倍以上。
作为本发明的进一步改进，其中所述波长转换层设置于所述发光二极管结构与所述第二主表面上，且不同位置的所述波长转换层所含荧光粉比例为1比0.5至1比3。
作为本发明的进一步改进，还包括一反射镜或滤波器，设置于所述第二主表面上或成长面上。
作为本发明的进一步改进，至少部分的所述发光二极管结构设置于第二主表面，所述成长面与所述第二主表面上的所述发光二极管结构对应交错排列。
作为本发明的另一实施方式，为一种发光二极管芯片，包括：
一透明基板，具有一成长面与一第二主表面彼此相对设置；以及
至少一发光二极管结构，设置于所述成长面上，并与未设置所述发光二极管结构的部分所述成长面形成可发光的一第一主表面；
其中，所述发光二极管结构的出光角度大于180度，且所述发光二极管结构所发出的至少部分光线穿透所述透明基板，并从第二主表面出光。
作为本发明的进一步改进，所述透明基板的材质包括蓝宝石且厚度大于或等于200微米。
作为本发明的进一步改进，所述第一主表面与所述第二主表面的光线色温差异等于或小于1500K。
作为本发明的进一步改进，还包括一波长转换层，至少设置于所述发光二极管结构、所述第一主表面或所述第二主表面，所述波长转换层至少部分吸收所述发光二极管结构所发出光线，并转换为不同波长范围的光线。
作为本发明的进一步改进，所述波长转换层设置于所述发光二极管结构上，并与所述发光二极管结构直接接触。
作为本发明的进一步改进，所述波长转换层与所述发光二极管结构不相接触。
作为本发明的进一步改进，所述波长转换层设置于所述第一主表面与所述第二主表面上，且不同位置的所述波长转换层所含荧光粉比例为1比0.5至1比3。
作为本发明的进一步改进，所述波长转换层设置于所述发光二极管结构与所述第二主表面上，且不同位置的所述波长转换层所含荧光粉比例为1比0.5至1比3。
作为本发明的进一步改进，所述透明基板对波长范围大于或等于420纳米，或小于或等于470纳米的光线，所述基板的光穿透率大于或等于70%。
作为本发明的进一步改进，所述发光二极管结构具有一发光面，所述第一主表面或所述第二主表面的面积为所述发光二极管结构的所述发光面的总面积5倍以上。
作为本发明的进一步改进，所述发光二极管结构的功率在0.2瓦特以下。
作为本发明的进一步改进，所述透明基板的材质包括选自氧化铝(Al2O3)、含有氧化铝的蓝宝石、碳化硅(SiC)、玻璃、塑料或橡胶所组成的其中任一种。
作为本发明的进一步改进，所述第二主表面具有一非平面结构。
作为本发明的进一步改进，还包括一类金刚石碳膜，设置于所述成长面或所述第二主表面上。
作为本发明的进一步改进，还包括一光学膜，设置于所述透明基板与所述类金刚石碳膜之间。
作为本发明的进一步改进，还包括一反射镜或滤波器，设置于所述第二主表面上或成长面上。
作为本发明的进一步改进，还包括若干个发光二极管结构设置于所述第二主表面，其中所述成长面与所述第二主表面上的所述发光二极管结构对应交错排列。
作为本发明的另一实施方式，为一种发光装置，包括所述的多方向出光的发光二极管芯片，以及一承载座；其中所述发光二极管芯片设置于所述承载座上。
作为本发明的进一步改进，所述发光二极管芯片与所述承载座间有一第一夹角，且所述第一夹角的角度范围包括30度至150度。
作为本发明的进一步改进，还包括一支架与所述承载座耦接，且所述发光二极管芯片固定于所述支架上，并通过所述支架与一电源电性耦接。
作为本发明的进一步改进，所述支架可弯折，使所述芯片与所述承载座间有一第一夹角。
作为本发明的进一步改进，包括若干个所述多方向出光的发光二极管芯片，且至少部分所述些芯片以点对称或线对称方式设置于所述承载座上。
作为本发明的进一步改进，还包括若干个支架，且至少部分该些发光二极管芯片分别设置在所述支架上。
作为本发明的进一步改进，至少部分所述支架与所述承载座之间的夹角角度相异。
作为本发明的进一步改进，所述支架至少具有一缺口，且所述芯片对应所述缺口固定于所述支架上。
作为本发明的进一步改进，所述支架与所述承载座一体化。
作为本发明的进一步改进，所述支架的材质可包括选自铝质金属、复合式金属材料、铜导线、电线、陶瓷基板或印刷电路板的任一种。
作为本发明的进一步改进，所述承载座包括至少一缺口或孔洞。
作为本发明的进一步改进，包括若干个所述发光二体体芯片，一支架与所述承载座耦接，其中所述支架包括若干个缺***错设置，且至少部分所述些芯片对应该些缺口固定于所述支架上，并通过所述支架与一电源电性耦接。
作为本发明的另一种实施方式，为一种发光装置，包括至少一多方向出光的发光二极管芯片，以及一支架；其中所述芯片设置于所述支架上，并通过所述支架与一电源电性耦接。
本发明的发光二极管芯片将发光二极管结构设置于透明基板上，而发光二极管结构所发出的光线可穿透透明基板。因此本发明的发光二极管芯片可至少多方向或全方向发光、提高发光效率并可改善过去发光二极管芯片光型不佳的问题。另外，本发明的发光二极管芯片的绝缘层、导电图案与发光二极管结构可利用晶圆级制作方法加以制作，可大量节省制作成本并具有较佳的可靠度。
附图说明
图1A与图1B为本发明的一较佳实施例的发光二极管芯片的结构示意图。
图2A、图2B与图2C为本发明的一较佳实施例的不同形式的发光二极管结构耦接于导线的示意图。
图3A与图3B为本发明的一较佳实施例的波长转换层的布置示意图。
图4为本发明的另一较佳实施例的发光二极管芯片的剖面示意图。
图5为本发明的另一较佳实施例的一变化实施例的发光二极管芯片的等效电路图。
图6为本发明的另一较佳实施例的发光二极管芯片的示意图。
图7A为本发明的一较佳实施例的承载座的示意图。
图7 B为本发明的一较佳实施例的电路基板的示意图。
图7C为本发明的一较佳实施例的反射镜的示意图。
图7D为本发明的一较佳实施例的类金刚石碳膜的示意图。
图8为本发明的一较佳实施例的发光装置的示意图。
图9为本发明的另一较佳实施例的发光装置的示意图。
图10A、图10B与图10C为本发明的一较佳实施例的透明基板插接或黏接于承载座的示意图。
图11A与图11B为本发明的一较佳实施例的透明基板黏接于具支架的承载座的示意图。
图12为本发明的另一较佳实施例的发光装置的立体示意图。
图13为本发明的另一较佳实施例的发光装置的装置基座的立体示意图。
图14为本发明的另一较佳实施例的发光装置的立体示意图。
图15A、图15B、图15C与图15D为本发明的一较佳实施例以点对称或线对称排列透明基板于承载机构上的俯视示意图。
图16为本发明的另一较佳实施例的发光装置的示意图。
图17A与第17B图为本发明的一较佳实施例的灯壳的示意图。
图17C为本发明的一较佳实施例的广告牌式灯壳的俯视剖面示意图。
图17D、图17E、图17F与图17G为本发明的一较佳实施例的球泡灯式的实施示意图。
图18为本发明的另一较佳实施例的灯条的示意图。
图19为本发明的另一较佳实施例的发光装置的立体示意图。
图20为本发明的另一较佳实施例的发光装置的示意图。
具体实施方式
以下将结合附图所示的具体实施方式对本发明进行详细描述。但这些实施方式并不限制本发明，本领域的普通技术人员根据这些实施方式所做出的结构、方法、或功能上的变换均包含在本发明的保护范围内。
请参照图1A与图1B所示，图1A与图1B为本发明的一较佳实施例的发光二极管芯片或发光板的结构示意。如图1A与图1B所示，发光二极管芯片1包括：一透明基板2；一成长面210；一第一主表面21A；一第二主表面21B以及至少一多方向出光发光二极管结构3。其中，透明基板2本身为平板薄片状并具有两个主要面体，其中任一主要面体为成长面210，具有发光功能的发光二极管结构3设置于该成长面210上，且发光二极管结构3未被透明基板2遮蔽的一发光面34，与未设置发光二极管结构3的部分成长面210共同形成可发光的第一主表面21A。透明基板2未设有发光二极管结构3的另一主要面体则为第二主表面21B。上述布置方式顺序相反同样可以达到效果，且也可于透明基板2两个面均设置发光二极管结构3，其中两个面上的发光二极管结构3可对应交错排列，使各面上的发光二极管结构3发光时，光线可顺利穿透透明基板2并从另一面出光，而不被另一面上的发光二极管结构遮蔽，增加单位面积的发光强度。透明基板2的材质可为氧化铝(Al2O3)、含有氧化铝的蓝宝石、碳化硅(SiC)、玻璃、塑料或是橡胶，其中，本发明的一种较佳实施例是采用蓝宝石基板，因为这种材料大体上为单晶结构，不但具有较好的透光率，且散热能力佳，可延长发光二极管芯片1的寿命；但使用传统蓝宝石基板于本发明中有易碎裂的问题，故本发明经实验验证，本发明的透明基板2较佳选用厚度大于或等于200微米(um)的蓝宝石基板，这样可达成较佳的可靠度，并有较佳的承载以及透光功能。同时本发明的发光二极管结构3较佳可选用出光角度大于180度者，即设置于透明基板2上的发光二极管结构3除发光面34可发出往远离基板方向离开的光线外，发光二极管结构3也可发出至少部分进入透明基板2的光线，而进入透明基板2的光线除从透明基板2上对应第一主表面21A的第二主表面21B出光外，也可从透明基板2的未设置发光二极管结构3的部分成长面210与其他表面出光，使发光二极管芯片1可以至少达成双面出光或全方向出光等多方向出光效果。在本发明中，第一主表面21A或第二主表面21B的面积为发光二极管结构3的发光面34的总和面积的五倍以上，这样设计为兼顾到发光效率以及散热等条件的最佳配置比例。
另外，本发明的另一较佳实施例是发光二极管芯片1的第一主表面21A与第二主表面21B发出的色温差异等于或小于1500K，使发光二极管芯片1有更全面一致的发光效果。而在透明基板2的透光特性上，当发光二极管结构3发出光线的波长范围大于或等于420纳米，和/或当该光线的波长范围小于或等于470纳米时，在上述透明基板2厚度条件下，透明基板2的光穿透率大于或等于70%。
本发明并不以上述实施例为限。下文将依序介绍本发明的其它较佳实施例，且为了便于比较各实施例的相异处并简化说明，在下文的各实施例中使用相同的符号标注等同的组件，且主要针对各实施例的相异处进行说明，而不再对重复部分进行赘述。
请参照图2A、图2B与图2C，本发明为了获得供电以进行发光，发光二极管结构3本身包括一第一电极31A与一第二电极31B，该第一电极31A与第二电极31B则分别与位于透明基板2上的一第一连接导线23A以及一第二连接导线23B电性连接。其中，图2A、图2B与图2C分别揭示了不同形式的发光二极管结构3以及与导线的耦接方式。图2A为横式发光二极管结构，其中发光二极管结构3形成于透明基板2的成长面210上，第一电极31A与第二电极31B以打线方式分别电性耦接于第一连接导线23A与第二连接导线23B；第2B图为覆晶式发光二极管结构，发光二极管结构3为倒置并通过第一电极31A与第二电极31B与透明基板2耦接，其中第一电极31A与第二电极31B以焊接或黏接方式分别电性耦接于第一连接导线23A与第二连接导线23B； 图2C则是在发光二极管结构3的两端设置第一电极31A与第二电极31B，并将发光二极管结构3以直立设置的方式使第一电极31A与第二电极31B分别与第一连接导线23A以及第二连接导线23B相连接。
请参照图3A与图3B，本发明的发光二极管芯片1还包括一波长转换层4，其设置于第一主表面21A和/或第二主表面21B上，或是直接设置于发光二极管结构3上，且其可直接接触发光二极管结构3，或是与发光二极管结构3相邻一段距离而不直接接触。波长转换层4含有至少一种荧光粉，如石榴石系、硫酸盐系或硅酸盐系等等无机或有机材质的荧光粉，以接收至少部分发光二极管结构3发出光线并转换为另一种波长范围的光。例如，当发光二极管结构3发出蓝光，波长转换层4转换部分蓝光为黄光，而使发光二极管芯片1在蓝光与黄光混合之下最后发出白光。另外由于第一主表面21A光源主要是发光二极管结构3的发光面直接出光，而第二主表面21B光源则是发光二极管结构3的光线穿透透明基板2发出的光，发光二极管芯片1的两个表面的光线强度不同，所以本发明的另一较佳实施例是发光二极管芯片1在第一主表面21A与第二主表面21B上的波长转换层4的荧光粉含量相应配置，其中第一主表面21A对第二主表面21B上的荧光粉（或发光二极管结构上的荧光粉对第二主表面21B上的荧光粉）含量比例范围较佳的可从1比0.5至1比3，使发光二极管芯片1的光线强度或光形可以符合应用需求，以及使发光二极管芯片1的第一主表面21A与第二主表面21B发出的色温差异等于或小于1500K，提升发光二极管芯片1的波长转换效率与发光效果。
请参照图4。图4为本发明的另一较佳实施例的发光二极管芯片的剖面示意图。如图4所示，本实施例的发光二极管芯片10包括一透明基板2、若干个发光二极管结构14、一绝缘层20与一导电图案22。透明基板2具有一成长面210与一第二主表面21B彼此相对设置。若干个发光二极管结构14设置或形成于透明基板2的成长面210上，且各发光二极管结构14包括一第一电极16与一第二电极18。发光二极管结构14未被透明基板2遮蔽的一发光面34，与未设置发光二极管结构14的部分成长面210共同形成一第一主表面21A。绝缘层20至少设置于部分若干个发光二极管结构14上。导电图案22设置于绝缘层20上并与至少部分第一电极16与至少部分第二电极18电性连接。导电图案22可为例如金属线路布局或一般打线所构成图案，但不以此为限而可为其它材质所构成的导电图案。
发光二极管结构14可包括一第一半导体层141、一主动层142与一第二半导体层143，依序形成于透明基板2上。第一半导体层141较佳可为一N型半导体层，而第二半导体层143较佳可为一P型半导体层，但不以此为限。第一半导体层141、主动层142与第二半导体层143的材料包括三A族的氮化物，例如氮化铝(AlN)或氮化镓(GaN)，但不以此为限。发光二极管芯片10可进一步包括一缓冲层13，形成于第一半导体层141与透明基板2之间。缓冲层13的材料可包括三A族的氮化物，例如氮化铝或氮化镓(GaN)，但不以此为限。第一电极16与第二电极18分别与第二半导体层143以及第一半导体层141电性连接。第一电极16与第二电极18可为金属电极，但不以此为限。
另外，发光二极管芯片10还包括一波长转换层4设置于透明基板2及发光二极管结构14上。发光二极管结构14所发出的光线(图未示)可为一特定波长，而波长转换层4可至少部分转换该特定波长，通过这种转换可使发光二极管芯片10发出其它特定波长或波长范围较大的光线。
在本实施例中，发光二极管结构14借助导电图案22而以串联方式电性连接，但不以此为限。另外，在本实施例中，绝缘层20、导电图案22、发光二极管结构14(包括第一半导体层141、主动层142与第二半导体层143)以及缓冲层13为一并制作，即缓冲层13、第一半导体层141、主动层142与第二半导体层143依序设置于透明基板2上后，再进一步依序设置绝缘层20与导电图案22并进行切割。绝缘层20与导电图案22可利用例如微影暨蚀刻制程设置，但不以此为限。本实施例的发光二极管芯片10的绝缘层20、导电图案22与发光二极管结构14利用晶圆级制作方法加以制作，可大量节省制作成本并具有较佳的可靠度。
本发明中，为了增加光线从透明基板2离开的出光量并使出光的分布均匀，第二主表面21B可选择性地具有一非平面结构12M。非平面结构12M可为各式凸出或凹陷的几何结构，例如金字塔、圆锥体、半球体或三角柱等，且非平面结构12M的排列可为规则性排列或随机性排列。另外，第二主表面21B上可选择性地设置有一类金刚石碳膜(diamond-like carbon, DLC)25，用以增加导热及散热效果。另外，第二主表面21B与类金刚石碳膜25之间可设置一光学膜28。在材料的选择上，光学膜28的折射率较佳可介于透明基板2的折射率与类金刚石碳膜25的折射率或波长转换层4的折射率之间，通过这种转换可增加出光量。
请参照图5，并请一并参照图4及其他上述图式。图5为本发明的一变化实施例的发光二极管芯片的等效电路图。如图5所示，在本变化实施例中，发光二极管芯片10’的若干个发光二极管结构14可借助导电图案22以串联/并联混合方式电性连接并透过连接导线与外部电源电性耦接。
请参照图6，图6为本发明的另一较佳实施例的发光二极管芯片的立体示意图。如图6所示，本发明的发光二极管芯片310包括透明基板2、至少一发光二极管结构3、一第一连接电极311A、一第二连接电极311B与至少一波长转换层4。其中发光二极管结构3设置于透明基板2的成长面210上，而形成发光的一第一主表面21A。在该实施例中，发光二极管结构3的一出光角度大于180度，且发光二极管结构3所发出的至少部分光线可射入透明基板2，而射入光线至少部分可从对应第一主表面21A的一第二主表面21B出光，部分从透明基板2其他表面出光，进而达到多面或六面发光的发光效果。第一连接电极311A以及第二连接电极311B分别设置于透明基板2上两端或同侧（图未示），并分别为透明基板2上的一第一连接导线与一第二连接导线所延伸的芯片对外电极，所以第一连接电极311A与第二连接电极311B分别与发光二极管结构3电性连接。波长转换层4至少覆盖发光二极管结构3和/或第二主表面21B并暴露至少部分第一连接电极311A与第二连接电极311B，其中波长转换层4至少部分吸收发光二极管结构3和/或透明基板2所发出的光线，并转换成另一波长的光线，然后与未被吸收的光线混光，增加发光二极管芯片310的发光波长范围与发光效果。也就是说波长转换层4可不覆盖第一连接电极311A与第二连接电极311B。由于本实施例的发光二极管芯片310具有分别设置于透明基板2上相对两端的第一连接电极311A与第二连接电极311B，所以发光二极管芯片310可独自完成制作后再与适合的承载座进行结合，而不需使用传统发光二级管封装制程，因此可达到提升整体制造良率、简化结构以及增加所配合的承载座设计变化等效果。
请参照图7A，本发明的一实施例为使用上述发光二极管芯片的发光装置11，其中发光装置11还包括一承载座5，使发光二极管芯片的透明基板2除可平放于该承载座5，也可立设于其上并耦接于该承载座5，使透明基板2与承载座5之间具有一第一夹角θ1，该第一夹角θ1角度可为固定或根据发光装置光形需要调动，其中较佳实施例的第一夹角θ1角度范围介于30度至150度之间。
请参照图7B，本发明的发光装置11的承载座5还包括一电路基板6与外部电源耦接，并电性耦接于透明基板2上的第一连接导线以及第二连接导线（图未示），而与发光二极管结构3电性连接，使外部电源透过电路基板供应发光二极管结构3发光所需电源。若无设置该电路基板6，发光二极管结构3也可直接透过第一连接导线以及第二连接导线（图未示）电性连接于承载座5，使外部电源可经由承载座5对该发光二极管结构3供电。
请参照图7C，本发明的发光装置11还包括一反射镜或滤波器8设置于第二主表面21B上或成长面上210，所述反射镜或滤波器8可反射所述发光二极管结构3所发出至少部分光线，并使部分射入所述透明基板2的光线改由所述第一主表面21A射出。该反射镜8可包括至少一金属层或一布拉格反射镜(Bragg reflector)，但不以此为限。其中，布拉格反射镜可由多层具有不同折射率的介电薄膜所堆栈而构成，或是由多层具有不同折射率的介电薄膜与多层金属氧化物所堆栈而构成。
请参照图7D，本发明的发光装置11的透明基板2还包括一类金刚石碳膜(diamond-like carbon, DLC) 9，其中该类金刚石碳膜9设置于透明基板2的成长面210和/或第二主表面21B上，以增加导热及散热效果。
请参照图8。图8为本发明的一较佳实施例的发光装置示意图。如图8所示，本实施例的发光装置100包括一发光二极管芯片10与一承载座26，其中该发光二极管芯片10嵌入该承载座26内，并透过连接导线与该承载座的电极30、32电性连接，一电源可通过该电极30、32提供驱动电压V+, V-以驱动该发光二极管芯片10发出光线L。在本实施例发光装置100中，发光二极管芯片10的结构可如上述实施例所述，且导电图案22与至少部分发光二极管结构14的第一电极16与第二电极18电性连接，使至少部分发光二极管结构14形成串联或其他如并联或串并联等电路，其中导电图案22可为例如金属线路布局或一般打线构成图案，但不以此为限，还可为其它材质或形式所构成的导电图案；而未与该导电图案22连接的第一电极16与第二电极18则通过连接导线分别与承载座26的电极30、32电性连接。另外发光二极管芯片10的至少一发光二极管结构14所发出光线L的出光角大于180度或具有多个发光面，使得该发光二极管芯片10的出光方向包括从第一主表面21A及第二主表面21B出光，且部分光线也可由发光二极管结构14和/或透明基板2的四个侧壁射出，使发光二极管芯片10具有六面发光或全方向等多方向出光特性。
另外，本实施例的发光二极管芯片10还包括波长转换层4、类金刚石碳膜25与光学膜28依次设置于透明基板2的第二主表面21B上，且波长转换层4还可进一步设置于发光二极管结构14或第一主表面21A上。其中波长转换层4可转换至少部分发光二极管结构14所发出的光线为另一波长范围的光，使发光二极管芯片10发出特定光色或波长范围较大的光线，例如发光二极管结构14产生的部分蓝光在照射到波长转换层4后可转换成为黄光，而发光二极管芯片10即可发出由蓝光与黄光混合成的白光。其中发光二极管结构14与发光二极管芯片10因设置类金刚石碳膜25与光学膜28提升了散热与发光效率，且发光二极管芯片10的透明基板2具有良好的热传导特性的材料，可将发光二极管结构所产生的热直接传导至承载座26，所以本发明的发光装置可使用高功率的发光二极管结构，但较佳实施例的发光装置是在同样功率条件下，在基板12上形成并散布多个较小功率的发光二极管结构，以充分利用基板12的热传导特性，如本实施例的各发光二极管结构14的功率小于或等于例如0.2瓦特，但不以此为限。
请参照图9。图9为本发明的一较佳实施例的发光装置示意图。如图9所示，本实施例的发光装置200还包括一支架51，用以连接发光二极管芯片10与承载座26，其中发光二极管芯片10通过一接合层52固定于支架51的一侧，而支架51的另一侧可设于承载座26上。另外支架51为可弹性调整角度θ1，使发光二极管芯片10与承载座26的夹角θ1介于30度至150度之间。支架51的材质可包括选自铝金属、复合式金属材料、铜导线、电线、陶瓷基板或印刷电路板之任一。
请参照图10A、图10B与图10C，当本发明中的透明基板2设置于承载座5上时，较佳实施例为可通过插接或是黏接的方式来达成两者的接合。
如图10A所示，透明基板2为布置于承载座5上，并插接于承载座5的单孔式插槽61，使发光二极管芯片通过连接导线与该插槽61电性耦接。这时透明基板2上的发光二极管结构(图未示)与承载座5的电源供应相耦接，且透明基板2上的导电图案或连接导线延伸至透明基板2边缘并整合为具有若干个导电触片的金手指结构或如连接电极311A和311B，也就是电性端口。插槽61可让透明基板2***，使发光二极管结构(图未示)在获得承载座5供电的同时，透明基板2也被固定于承载座5的插槽61。
请参照图10B，其为通过插接透明基板2于承载座5上多孔式插槽的结构示意图。在此实施例中，透明基板2具有至少一双插脚结构，其中一个插脚可为电性正极，另一个则可为电性负极，两处皆具有导电触片作为端口。也就是说，上述的插脚上至少设有一电性端口。而对应地，在承载座5则具有至少两个与插脚***面尺寸相符的插槽61，使透明基板2可与承载座5顺利接合，并让发光二极管结构获得供电。
请参照图10C，其为将透明基板2与承载座5接合。在接合的过程中，可以透过金、锡、铟、铋、银等金属做焊接辅助而接合，或是使用具导电性的硅胶或是环氧树脂辅助固定透明基板2，并可使发光二极管芯片的导电图案或连接导线借助接合层与承载座上的电极电性连接。
请参照图11A与图11B，本实施例的发光装置11主要组成同上述实施例所述，其中承载座5可为一金属基板如可弯折的铝质金属、复合式含铝材料、铜导线或电线构成，也可为陶瓷基板或印刷电路板。承载座5的表面或是侧边具有至少一支架62，该支架62为与承载座5分离或一体化的机构件。发光二极管芯片可通过黏接或焊接的方式与支架62相耦接，也就是借助接合层63将透明基板2固定于承载座5，并与承载座5无支架的部分的表面维持具有第一夹角θ1，且承载座5无支架的部分的表面也可设置发光二极管芯片以提升发光装置11的发光效果；另外，发光二极管芯片也可透过插接（图未示）的方式与支架62相连接，也就是借助连接器结合芯片与支架和/或支架与承载座，而将透明基板2固定于承载座5。由于承载座5与支架62可弯折，因此增加了发光装置11在应用时的灵活性，同时可使用若干个不同发光波长的发光二极管芯片组合出不同光色，使发光装置11具有变化性以满足不同需求。
请参照图12。如图12所示，本实施例的发光装置包括至少一发光二极管芯片1及一承载座5，其中该承载座5包括至少一支架62以及至少一电路图案P。发光二极管芯片1的主要组成可如之前实施例所述，并以透明基板的一端与支架62相耦接，以避免或减少支架62对发光二极管芯片1出光的遮蔽效果。承载座5可为铝质金属基板、复合式铝质金属基板、铜导线或电线构成，也可为陶瓷基板或印刷电路板，支架62可自承载座5的一部分加以切割并弯折一角度(如上述图11A与图11B之第一夹角θ1)而成。电路图案P设置于承载座5上，并具有至少1组电性端点与一电源电性连接，且有一部分延伸至支架62与发光二极管芯片1上的连接导线电性连接，使该发光二极管芯片1可通过承载座5的电路图案P与电源电性连接。承载座5还包括至少一孔洞H或至少一缺口G，使固定件如螺丝、钉子或插销等等可通过该孔洞H或缺口G将承载座5与其他组件依发光装置应用情形作进一步构装或安装，同时孔洞H或缺口G也增加承载座5的散热面积，提升发光装置的散热效果。
请参照图13。图13为本发明的另一较佳实施例的发光装置的装置基座的立体示意图。如图13所示，本实施例的装置基座322包括一承载座5以及至少一支架62，与图12的实施例相较，本实施例的支架62还包括至少一条状部342与一缺口330，其中电极30、32分别设置于缺口330的两侧或同侧（图13未示），条状部342至少构成该缺口330的一边墙。一发光二极管芯片对应该缺口330与该支架62耦接，且该发光二极管芯片的连接导线与电极30、32电性连接，使该发光二极管芯片可通过支架62及承载座上的电路图案与一电源电性耦接而被驱动。其中缺口330尺寸需不小于发光二极管芯片的一主要出光面，使发光二极管芯片面对支架62方向的出光不被支架62遮蔽。支架62与承载座5之间的连接处可为一可活动设计，以使支架62与承载座5之间夹角可视需要进行调整。
请参照图13与图14。图14为本发明的另一较佳实施例的发光装置的立体示意图。与图13的实施例相较，图14所示的发光装置302还包括至少一有若干个缺口330的支架62，其中该若干个缺口330分别设置于支架62的两边，使条状部342至少同时构成该若干个缺口330的一边墙。若干个发光二极管芯片310与该若干个缺口330对应设置，且各发光二极管芯片310的导电图案或连接电极(图未示)分别与电极30以及电极32对应设置并电性连结。本实施例的发光装置302还进一步可包括若干个支架62，各设置有发光二极管芯片310的支架62与承载座5之间夹角可视需要各自进行调整，换句话说，至少部分的支架62与承载座5之间的夹角可彼此相异以达到所需的发光效果，但并不以此为限。另外也可在相同支架或不同支架设置不同发光波长范围的发光二极管芯片组合，使发光装置之色彩效果更丰富。
为了提高亮度与改善发光效果，本发明的另一实施例的发光装置将若干个透明基板所形成的发光二极管芯片同时布置于如上述实施例的承载座或其他承载机构上，此时可采对称或非对称排列的形式做布置，较佳的对称布置方式也就是将多个透明基板所形成的发光二极管芯片以点对称或线对称的形式设置于承载机构上。请参照图15A、图15B、图15C与图15D，各实施例的发光装置在各种不同形状的承载机构60上设置若干个发光二极管芯片，并且以点对称或线对称的形式让整体发光装置11的出光能够均匀(发光二极管结构省略示意)，这些发光装置11的出光效果还可通过改变上述的第一夹角的大小而再做进一步的调整与改善。如图15A所示，发光二极管芯片之间以点对称方式夹90度角，此时从发光装置四面的任一面往发光装置内看均正对至少2个发光二极管芯片；图15B所示的发光装置的发光二极管芯片之间夹角小于90度；图15D所示的发光装置的发光二极管芯片之间夹角大于90度。另一实施例则以非对称布置方式将多个发光二极管芯片至少部分集中或分散设置，以达成发光装置于不同应用时的光形需要（图未示）。
请参照图16。图16为本发明的另一较佳实施例的发光装置的剖面示意图。如图16所示，发光装置301包括发光二极管芯片310以及一支架321。支架321包括一缺口330，且发光二极管芯片310与缺口330对应设置。其中，本实施例的支架321 的延伸部可当作插脚或弯折成表面焊接所需接垫，用以固定和/或电性连接于其他电路组件。由于发光二极管芯片310的一出光面设置于缺口330内，所以不论支架321是否为透光材料，发光装置301都可保有六面发光的多方向发光效果。
请参照图17A，为本发明具体实施例的一的发光装置，该发光装置包括一长管形的灯壳7、至少一发光二极管芯片1以及一承载机构60，其中发光二极管芯片1设置于承载机构60上并至少一部分位于长管形的灯壳7所形成之空间内。再请参照图17B，此实施例包括两个以上发光二极管芯片1设置于灯壳7内，这些发光二极管芯片1的第一主表面21A之间是以不互相平行的方式做排列。另外，发光二极管芯片1至少部分置于灯壳7所形成空间内，且不紧贴灯壳7的内壁，较佳的实施例为发光二极管芯片1与灯壳7之间有一大于或等于500微米(μm)的距离D；但也可设计以灌胶方式形成灯壳7，并使该灯壳7至少部分包覆并直接接触于该发光二极管芯片1。
请参照图17C，本发明的另一具体实施例的发光装置，其中该发光装置的灯壳7具有至少一个罩面71，该罩面71可为印刷有广告的版面或其他需要背光源的显示设备，且本发明的发光二极管芯片1的第一主表面21A和第二主表面21B所提供的光照形成罩面71的背光，其中，发光二极管芯片1与罩面71之间形成的第二夹角的角度范围介于0度~45度(第二夹角于图中为0度，故未示)。为了确保透明基板以及多方向出光的发光二极管结构所组合成的发光二极管芯片或发光板/发光片所产生的光能均匀的穿透灯壳7，发光二极管芯片1至少部分置于灯壳7所形成的空间内，且基本上不紧贴灯壳7的内壁，较佳的实施例为发光二极管芯片1与灯壳7之间有一大于或等于500微米的距离D；但也可设计以灌胶方式形成灯壳7，并使灯壳7至少部分包覆并直接接触于透明基板2。
请参照图17D、图17E、图17F与图17G，为本发明的另一系列具体实施例，发光装置进一步包括一球形的灯壳7以及底座64。在图17D中，与之前实施例相较，本实施例的发光装置还包括一球形的灯壳7，一承载座5进一步设置于一底座64上，其中该底座64可为传统灯泡底座，该灯壳7可与底座64耦接并包覆发光二极管芯片与承载座5，或灯壳7可直接与承载座5耦接而包覆发光二极管芯片。底座64的形式不拘，可为平台或是另有承载突部，如图17E所示。在图17F中，灯壳7的内侧涂布有波长转换层4，可让发光二极管结构3所产生的光线至少有部分在离开灯壳7之前可被转换成另一波长范围的光。而在图17G中，则揭示了使用双层之灯壳7与灯壳7’的设计，灯壳7与灯壳7’之间具有一空间S，利用灯壳7、灯壳7’以及两者之间的空间S可使发光装置在花纹和色彩等发光效果上做进一步变化。
请参照图18与图19，图18为本发明的另一较佳实施例的灯条的示意图，图19为本发明的另一较佳实施例的发光装置的立体示意图。如图18所示，本实施例的灯条323包括若干个缺口330。灯条323具有一延伸方向X，且缺口330沿延伸方向X排列设置。若干个多方向出光的发光二极管芯片对应灯条323的缺口330设置而形成一发光灯条，但并不以此为限。另外，灯条323还包括若干个不同电性的电极30和32、与一第一连外电极350A以及一第二连外电极350B。电极30和32分别设置于各缺口330的两侧或同侧（图未示）。第一连外电极350A以及第二连外电极350B分别与各电极30和32电性连接并设置于灯条323的两侧。如图19所示，发光装置303包括上述实施例的灯条323以及一装置框架360。其中，设置有发光二极管芯片310的灯条323可视需要以垂直、水平或斜放的方式设置于装置框架360上，灯条323可借助位于两侧的第一连外电极350A以及第二连外电极350B通过装置框架360与一电源电性连结，但并不以此为限。另外，发光装置303也可视需要搭配适合的光学膜（例如扩散膜）以调整装置框架360中发光二极管芯片310所形成的发光效果。
请参照图20，图20为本发明的另一较佳实施例的发光装置的示意图。如图20所示，发光装置304包括若干个发光二极管芯片310以及一承载座324。承载座324包括若干个缺口330，缺口330以一矩阵方式排列设置，且各发光二极管芯片310与缺口330对应设置。本实施例的各发光二极管芯片310与缺口330的连接方式与上述实施例相似，故不再赘述。在本实施例中，承载座324还包括第一连外电极350A以及第二连外电极350B，用以与其他外部组件电性连接。另外，本实施例的发光装置304可用于广告牌或直下式背光模块，且承载座324较佳实施方式为具有透光性质，但并不以此为限。
综上所述，本发明的发光二极管芯片使用透明基板以及出光经过透明基板的发光二极管结构，因此具有六面发光或全方向发光等的多方向发光效果，且可提升发光效率并改善现有发光二极管芯片光型不佳的问题。另外，透明基板包括选择自具有良好的热传导特性的材料，使该发光二极管结构所产生的热能可快速通过透明基板进行散热。同时，本发明的发光二极管芯片的绝缘层、导电图案与发光二极管结构可利用晶圆级制作方法加以制作，可大量节省制作成本并具有较佳的可靠度。
本发明所揭示的发光二极管芯片或发光板/发光片，为通过将发光二极管结构设置于透明基板上而形成的，故本发明的发光二极管芯片可被有效且充分的灵活运用；并且发光二极管芯片的两个主要面都可出光，因此能在最少的供电下获得最大的出光效率，并有均匀的出光效果，而无论是应用于灯泡、灯管、广告牌等领域，都可展现其发光效果佳、低耗电量以及出光均匀等优点，确实为一具有经济和实用价值的发光二极管芯片。

Claims (29)

1.一种用于形成多方向出光的发光二极管芯片的蓝宝石基板，其特征在于，所述蓝宝石基板上形成多个多方向出光的发光二极管结构，且所述蓝宝石基板包括：
一成长面，用于设置所述发光二极管结构；
一第二主表面，相背于所述成长面设置；
一第一连接导线以及一第二连接导线，均设置于所述成长面且与发光二极管结构电性连接；
一第一连接电极以及一第二连接电极，均设置于所述蓝宝石基板的至少一边缘，第一连接电极与第一连接导线电性耦接，第二连接电极与第二连接导线电性耦接，如此形成一电性端口以与电源电性连接，且所述蓝宝石基板的厚度大于或等于200微米。
2.根据权利要求1所述用于形成多方向出光的发光二极管芯片的蓝宝石基板，其特征在于，所述第二主表面具有一非平面结构。
3.根据权利要求1所述用于形成多方向出光的发光二极管芯片的蓝宝石基板，其特征在于，所述蓝宝石基板还包括至少一类金刚石碳膜，设置于所述成长面或所述第二主表面上。
4.根据权利要求3所述用于形成多方向出光的发光二极管芯片的蓝宝石基板，其特征在于，所述蓝宝石基板还包括至少一光学膜，设置于所述类金刚石碳膜与所述第二主表面之间。
5.根据权利要求1所述用于形成多方向出光的发光二极管芯片的蓝宝石基板，其特征在于，所述成长面或所述第二主表面的面积为设置于其上的至少一发光二极管结构的一发光面的总面积5倍以上。
6.根据权利要求1所述用于形成多方向出光的发光二极管芯片的蓝宝石基板，其特征在于，所述蓝宝石基板还包括至少一波长转换层设置于所述第二主表面上，且所述波长转换层包含一种材质以上的荧光粉。
7.根据权利要求1所述用于形成多方向出光的发光二极管芯片的蓝宝石基板，其特征在于，所述蓝宝石基板还包括一反射镜或滤波器，设置于所述第二主表面上或成长面上。
8.根据权利要求7所述用于形成多方向出光的发光二极管芯片的蓝宝石基板，其特征在于，所述反射镜或滤波器包括多层具有不同折射率的介电薄膜。
9.根据权利要求8所述用于形成多方向出光的发光二极管芯片的蓝宝石基板，其特征在于，所述反射镜包括多层金属氧化物。
10.根据权利要求1所述用于形成多方向出光的发光二极管芯片的蓝宝石基板，其特征在于，所述蓝宝石基板对波长范围在420纳米到470纳米的光线的穿透率大于或等于70%。
11.根据权利要求1所述用于形成多方向出光的发光二极管芯片的蓝宝石基板，其特征在于，所述第一连接电极与所述第二连接电极相对设置于所述蓝宝石基板两端或同侧。
12.根据权利要求1所述用于形成多方向出光的发光二极管芯片的蓝宝石基板，其特征在于，所述蓝宝石基板上至少设有一插脚，且所述插脚上至少设有一电性端口。
13.一种多方向出光的发光二极管芯片，其特征在于，包括一如权利要求1所述的蓝宝石基板，以及若干个发光二极管结构，设置于所述成长面上，并与未设置所述发光二极管结构的部分所述成长面形成可发光的一第一主表面，若干个所述发光二极管结构均具有一第一电极与一第二电极；
所述发光二极管结构中至少一个所述发光二极管结构的发光方向包括经过所述蓝宝石基板并从所述第二主表面出光。
14.一种多方向出光的发光二极管芯片，其特征在于，包括一如权利要求1所述的蓝宝石基板，以及至少一发光二极管结构，设置于所述成长面上，并与未设置所述发光二极管结构的部分所述成长面形成可发光的一第一主表面，所述发光二极管结构具有一第一电极与一第二电极；
所述发光二极管结构的出光角度大于180度，且所述发光二极管结构所发出的至少部分光线穿透所述蓝宝石基板，并从所述第二主表面出光。
15.根据权利要求13所述的多方向出光的发光二极管芯片，其特征在于，还包括波长转换层设置于所述第一主表面与所述第二主表面上，且不同位置的所述波长转换层所含荧光粉比例为1比0.5至1比3。
16.根据权利要求13所述的多方向出光的发光二极管芯片，其特征在于，还包括波长转换层设置于所述发光二极管结构与所述第二主表面上，且不同位置的所述波长转换层所含荧光粉比例为1比0.5至1比3。
17.根据权利要求15所述的多方向出光的发光二极管芯片，其特征在于，所述蓝宝石基板还包括一第一连接电极与一第二连接电极分别与所述第一电极与所述第二电极电性耦接，且所述波长转换层不覆盖所述第一连接电极与所述第二连接电极。
18.根据权利要求13所述的多方向出光的发光二极管芯片，其特征在于，所述蓝宝石基板还包括一反射镜或滤波器，设置于所述第二主表面上或成长面上。
19.根据权利要求13所述的多方向出光的发光二极管芯片，其特征在于，还包括若干个发光二极管结构设置于第二主表面，所述成长面与所述第二主表面上的所述发光二极管结构对应交错排列。
20.根据权利要求14所述的多方向出光的发光二极管芯片，其特征在于，还包括波长转换层设置于所述第一主表面与所述第二主表面上，且不同位置的所述波长转换层所含荧光粉比例为1比0.5至1比3。
21.根据权利要求14所述的多方向出光的发光二极管芯片，其特征在于，还包括波长转换层设置于所述发光二极管结构与所述第二主表面上，且不同位置的所述波长转换层所含荧光粉比例为1比0.5至1比3。
22.根据权利要求14所述的多方向出光的发光二极管芯片，其特征在于，所述蓝宝石基板还包括一反射镜或滤波器，设置于所述第二主表面上或成长面上。
23.根据权利要求14所述的多方向出光的发光二极管芯片，其特征在于，还包括若干个发光二极管结构设置于第二主表面，所述成长面与所述第二主表面上的所述发光二极管结构对应交错排列。
24.一种发光装置，其特征在于，包括至少一如权利要求13或14所述的多方向出光的发光二极管芯片，以及一承载座，所述发光二极管芯片设置于所述承载座上。
25. 根据权利要求24所述的发光装置，其特征在于，所述发光二极管芯片与所述承载座间有一第一夹角，所述第一夹角角度范围包括30度至150度。
26.根据权利要求24所述的发光装置，其特征在于，还包括一支架，所述支架与所述承载座耦接，且所述发光二极管芯片固定于所述支架上。
27.根据权利要求26所述的发光装置，其特征在于，所述支架可弯折，使所述发光二极管芯片与所述承载座间有一第一夹角。
28.根据权利要求24所述的发光装置，其特征在于，包括若干个所述多方向出光的发光二极管芯片，且至少部分所述发光二极管芯片以点对称或线对称方式设置于所述承载座上。
29.一种发光装置，其特征在于，至少包括一如权利要求13或14所述的多方向出光的发光二极管芯片，以及一支架，所述发光二极管芯片设置于所述支架上。
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