CN103456728A - 发光组件及其发光装置 - Google Patents

发光组件及其发光装置 Download PDF

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Publication number
CN103456728A
CN103456728A CN2013101919432A CN201310191943A CN103456728A CN 103456728 A CN103456728 A CN 103456728A CN 2013101919432 A CN2013101919432 A CN 2013101919432A CN 201310191943 A CN201310191943 A CN 201310191943A CN 103456728 A CN103456728 A CN 103456728A
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China
Prior art keywords
light
luminescence component
emitting diode
backlight unit
diode chip
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Granted
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CN2013101919432A
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English (en)
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CN103456728B (zh
Inventor
潘锡明
郑惟纲
黄知澍
李承鸿
叶时有
蒲计志
杨程光
汤士杰
洪祥富
王子翔
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Epistar Corp
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Formosa Epitaxy Inc
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Priority claimed from TW101125599A external-priority patent/TWI479695B/zh
Priority claimed from TW101131198A external-priority patent/TW201409775A/zh
Priority claimed from TW101131643A external-priority patent/TWI464908B/zh
Priority claimed from TW101132187A external-priority patent/TWI490432B/zh
Priority claimed from TW101132185A external-priority patent/TWI577919B/zh
Priority claimed from TW102116429A external-priority patent/TWI533468B/zh
Priority claimed from TW102116650A external-priority patent/TWI511279B/zh
Priority to CN201610696438.7A priority Critical patent/CN106252491A/zh
Application filed by Formosa Epitaxy Inc filed Critical Formosa Epitaxy Inc
Publication of CN103456728A publication Critical patent/CN103456728A/zh
Publication of CN103456728B publication Critical patent/CN103456728B/zh
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V21/00—Supporting, suspending, or attaching arrangements for lighting devices; Hand grips
    • F21V21/14—Adjustable mountings
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    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
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    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
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    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
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Abstract

本发明公开了一种发光组件，包括一透明基板与若干个发光二极管芯片。透明基板具有一承载面与一第二主表面彼此相对设置。至少部分的发光二极管芯片设置于承载面上并与未设置发光二极管芯片的部分承载面形成可发光的一第一主表面。各发光二极管芯片包括一第一电极与一第二电极。至少一个发光二极管芯片的发光方向包括经过透明基板并从第二主表面出光。一种发光装置，包括发光组件以及一承载座，发光组件设置于承载座上，并与承载座间有一第一夹角。

Description

发光组件及其发光装置
技术领域
本发明关于一种发光组件以及使用所述发光组件的发光装置，尤其是指一种多方向出光的发光组件及具有所述发光组件的发光装置。
背景技术
发光二极管(light emitting diode, LED)本身所发出来的光是偏向一种指向性的光源，并非如一般市场出售的灯泡为一种发散型的光源，因此在应用上会受到限制。举例说明，在一般室内外照明的灯具上的应用并无法达到所需要的光型。另外，现有技术中发光二极管发光装置仅可单面发光，因此具有较低的发光效率。
发明内容
本发明的目的在于提供一种至少多方向出光的发光组件以及使用所述组件的发光装置，以提升发光效率、改善光型并节省成本。
为了解决上述技术问题，本发明所采用的技术方案为：
一种发光组件，其包括：
一透明基板，具有一承载面与一第二主表面彼此相对设置；以及
若干个发光二极管芯片，至少部分的所述发光二极管芯片设置于所述承载面上，并与未设置所述发光二极管芯片的部分所述承载面形成可发光的一第一主表面，其中各所述发光二极管芯片包括一第一电极与一第二电极；
所述发光二极管芯片中至少一个所述发光二极管芯片的发光方向包括经过所述透明基板并从所述第二主表面出光。
作为本发明的进一步改进，还包括至少一波长转换层，设置于所述发光二极管芯片、所述第一主表面或所述第二主表面上，所述波长转换层至少部分吸收所述发光二极管芯片所发出的光线，并转换为不同波长范围的光线。
作为本发明的进一步改进，所述波长转换层设置于所述第一主表面与所述第二主表面上，且不同位置的所述波长转换层所含荧光粉比例为1比0.5至1比3。
作为本发明的进一步改进，所述发光二极管芯片的功率在0.2瓦特以下。
作为本发明的进一步改进，所述透明基板的材质包括选自氧化铝(Al2O3)、含有氧化铝的蓝宝石、碳化硅(SiC)、玻璃、塑料或橡胶的其中任一种。
作为本发明的进一步改进，所述第二主表面具有一非平面结构。
作为本发明的进一步改进，还包括一类金刚石碳膜，设置于所述承载面或所述第二主表面上。
作为本发明的进一步改进，还包括一光学膜，设置于所述透明基板与所述类金刚石碳膜之间。
作为本发明的进一步改进，至少一个所述发光二极管芯片的出光角度大于180度。
作为本发明的进一步改进，所述透明基板材质为蓝宝石且厚度大于或等于200微米。
作为本发明的进一步改进，所述第一电极与所述第二电极分别与所述透明基板上的一第一连接导线以及一第二连接导线电性连接。
作为本发明的进一步改进，所述第一主表面与所述第二主表面所发出光线的色温差异等于或小于1500K。
作为本发明的进一步改进，所述透明基板对波长范围大于或等于420纳米，或小于或等于470纳米的光线，所述基板的光穿透率大于或等于70%。
作为本发明的进一步改进，所述发光二极管芯片均具有一发光面，且所述第一主表面或所述第二主表面的面积为所述发光二极管芯片的发光面的总面积5倍以上。
作为本发明的进一步改进，所述波长转换层设置于所述发光二极管芯片与所述第二主表面上，且不同位置的波长转换层所含荧光粉比例为1比0.5至1比3。
作为本发明的进一步改进，还包括一反射镜或滤波器，设置于所述第二主表面上或承载面上。
作为本发明的进一步改进，至少部分所述发光二极管芯片设置于所述第二主表面上，且所述承载面与所述第二主表面上的所述发光二极管芯片对应交错排列。
作为本发明的进一步改进，包括至少所述发光组件，以及一承载座；所述发光组件设置于所述承载座上。
作为本发明的进一步改进，所述发光组件与所述承载座间有一第一夹角，且所述第一夹角的角度范围包括30度至150度。
作为本发明的进一步改进，还包括一支架与所述承载座耦接，且所述发光组件固设于所述支架上，并通过所述支架与一电源电性耦接。
作为本发明的进一步改进，所述支架可弯折，使所述发光组件与所述承载座间有所述第一夹角。
作为本发明的进一步改进，还包括若干个所述发光组件，且至少部分所述发光组件以点对称或线对称方式设置于所述承载座上。
作为本发明的进一步改进，还包括若干个支架，且至少部分所述发光组件分别设置在所述支架。
作为本发明的进一步改进，至少部分所述支架与所述承载座之间的夹角角度相异。
作为本发明的进一步改进，所述支架至少具有一缺口，且所述发光组件对应所述缺口固设于所述支架上。
作为本发明的进一步改进，所述支架与所述承载座一体化。
作为本发明的进一步改进，所述支架的材质可包括选自铝质金属、复合式金属材料、铜导线、电线、陶瓷基板或印刷电路板的任一种。
作为本发明的进一步改进，所述承载座包括至少一缺口或孔洞。
作为本发明的进一步改进，还包括若干个所述发光组件以及一支架，所述支架与所述承载座耦接，所述支架包括若干个缺口相对设置，且至少部分所述发光组件对应所述缺口固设于所述支架上，并通过所述支架与一电源电性耦接。
本发明的另一种实施方式，为包括所述的发光组件以及一支架，其中所述发光组件设置于所述支架上。
本发明的另一种实施方式，为一种发光组件，包括：
一透明基板，具有一承载面与一第二主表面彼此相对设置；以及
至少一发光二极管芯片，设置于所述承载面上，并与未设置所述发光二极管芯片的部分所述承载面形成可发光的一第一主表面；
所述发光二极管芯片的出光角度大于180度，且所述发光二极管芯片所发出的至少部分光线穿透所述透明基板，并从所述第二主表面出光。
作为本发明的进一步改进，所述透明基板的材质包括蓝宝石且厚度大于或等于200微米。
作为本发明的进一步改进，所述第一主表面与所述第二主表面所发出光线的色温差异等于或小于1500K。
作为本发明的进一步改进，还包括一波长转换层，至少设置于所述发光二极管芯片、所述第一主表面或所述第二主表面上，所述波长转换层至少部分吸收所述发光二极管芯片所发出光线，并转换为不同波长范围的光线。
作为本发明的进一步改进，所述波长转换层设置于所述发光二极管芯片上，并与所述发光二极管芯片直接接触。
作为本发明的进一步改进，所述波长转换层与所述发光二极管芯片不相接触。
作为本发明的进一步改进，所述波长转换层设置于所述第一主表面与所述第二主表面上，且不同位置的所述波长转换层所含荧光粉比例为1比0.5至1比3。
作为本发明的进一步改进，所述波长转换层设置于所述发光二极管芯片与所述第二主表面上，且不同位置的所述波长转换层所含荧光粉比例为1比0.5至1比3。
作为本发明的进一步改进，所述透明基板对波长范围大于或等于420纳米，或小于或等于470纳米的光线，所述基板的光穿透率大于或等于70%。
作为本发明的进一步改进，所述发光二极管芯片具有一发光面，所述第一主表面或所述第二主表面的面积为所述发光二极管芯片的发光面的总面积5倍以上。
作为本发明的进一步改进，所述发光二极管芯片的功率在0.2瓦特以下。
作为本发明的进一步改进，所述透明基板的材质包括选自氧化铝(Al2O3)、含有氧化铝的蓝宝石、碳化硅(SiC)、玻璃、塑料或橡胶的其中任一种。
作为本发明的进一步改进，所述第二主表面具有一非平面结构。
作为本发明的进一步改进，还包括一类金刚石碳膜，设置于所述承载面或所述第二主表面上。
作为本发明的进一步改进，还包括一光学膜，设置于所述透明基板与所述类金刚石碳膜之间。
作为本发明的进一步改进，还包括一反射镜或滤波器，设置于所述第二主表面上或承载面上。
作为本发明的进一步改进，还包括若干个所述发光二极管芯片设置于所述第二主表面上，所述承载面与所述第二主表面上的所述发光二极管芯片对应交错排列。
作为本发明的另一种实施方式，为一种发光装置的装置基座，包括：
一承载座；以及
若干个支架，所述支架自所述承载座向外延伸设置，用以设置所述的发光组件。
作为本发明的进一步改进，至少部分所述支架与所述承载座之间的夹角彼此相异。
作为本发明的进一步改进，至少部分所述支架以点对称或线对称方式设置于所述承载座上。
本发明的发光装置将发光二极管芯片固设于透明基板上，而透明基板可容许发光二极管芯片所发出光线穿透。因此本发明的发光装置可至少多方向或全方向发光、提高发光效率并可改善现有技术中发光二极管的光型不佳的问题。
附图说明
图1A与图1B为本发明的一较佳实施例的发光组件的结构示意图。
图2A、图2B与图2C为本发明的一较佳实施例的不同形式的发光二极管芯片耦接于导线的示意图。
图3A与图3B为本发明的一较佳实施例的波长转换层的布置示意图。
图4A为本发明的另一较佳实施例的发光组件的剖面示意图。
图4B为本发明的另一较佳实施例的发光组件的剖面示意图。
图5为本发明的另一较佳实施例的发光组件的示意图。
图6A为本发明的一较佳实施例的承载座的示意图。
图6B为本发明的一较佳实施例的电路基板的示意图。
图6C为本发明的一较佳实施例的反射镜的示意图。
图6D为本发明的一较佳实施例的类金刚石碳膜的示意图。
图7A为本发明的一较佳实施例的发光装置的示意图。
图7B为本发明的另一较佳实施例的发光装置的示意图。
图8为本发明的另一较佳实施例的发光装置的外观示意图。
图9A、图9B与图9C为本发明的一较佳实施例的透明基板插接或黏接于承载座的示意图。
图10A与图10B为本发明的一较佳实施例的透明基板黏接于具支架的承载座的示意图。
图11为本发明的另一较佳实施例的发光装置的立体示意图。
图12为本发明的另一较佳实施例的发光装置的装置基座的立体示意图。
图13为本发明的另一较佳实施例的发光装置的立体示意图。
图14A、图14B、图14C与图14D为本发明的一较佳实施例以点对称或线对称排列透明基板于承载机构上的俯视示意图。
图15为本发明的另一较佳实施例的发光装置的示意图。
图16A与图16B为本发明的一较佳实施例灯壳的示意图。
图16C为本发明的一较佳实施例的广告牌式灯壳的俯视剖面示意图。
图16D、图16E、图16F与图16G为本发明的一较佳实施例的球泡灯式的实施示意图。
图17为本发明的另一较佳实施例的灯条的示意图。
图18为本发明的另一较佳实施例的发光装置的立体示意图。
图19为本发明的另一较佳实施例的发光装置的示意图。
具体实施方式
请参考图1A与图1B，图1A与图1B为本发明的一较佳实施例的发光组件或发光板的结构示意。如图1A与图1B所示，发光组件1包括：一透明基板2；一承载面210；一第一主表面21A；一第二主表面21B以及至少一多方向出光发光二极管芯片3。其中，透明基板2本身为平板薄片状并具有两个主要面体，其中任一主要面体为承载面210，具有发光功能的发光二极管芯片3设置于所述承载面210上，且发光二极管芯片3未被透明基板2遮蔽的一发光面34，与未设置发光二极管芯片3的至少部分承载面210共同形成可发光的第一主表面21A。透明基板2未设有发光二极管芯片3的另一主要面体则为第二主表面21B。也可于基板两个面均布置发光二极管芯片3，其中两个面上的发光二极管芯片3可对应交错排列，使各面上的发光二极管芯片3发光时，光线可顺利穿透透明基板2并从另一面出光，而不被另一面上的发光二极管芯片遮蔽，增加单位面积的发光强度。透明基板2的材质可为氧化铝(Al2O3)、含有氧化铝的蓝宝石、碳化硅(SiC)、玻璃、塑料或是橡胶，其中，本发明较佳实施例是采用蓝宝石基板，因为蓝宝石基板的材料大体上为单晶结构，不但具有较好的透光率，且散热能力佳，可延长发光组件1的寿命；但使用传统蓝宝石基板于本发明中有易碎裂的问题，所以本发明经实验验证，本发明的透明基板2较佳选用厚度大于或等于200微米(um)的蓝宝石基板，以达成较佳的可靠度，并有较佳的承载以及透光功能。同时为有效达成发光组件1双向或全方向等多方向出光的目的，本发明的发光二极管芯片3较佳可选用出光角度大于180度者。这样，当本发明在使用时，设置于透明基板2的上的发光二极管芯片3除发光面34可发出往远离基板方向离开的光线外，发光二极管芯片3也可发出至少部分进入透明基板2的光线，而进入透明基板2的光线除从透明基板2上对应第一主表面21A的第二主表面21B出光外，也可从透明基板2的未设置发光二极管芯片3的部分承载面210与其他表面出光，使发光组件1可以达成双面出光或全方向出光等多方向出光效果。在本发明中，第一主表面21A或第二主表面21B的面积为发光二极管芯片3的发光面34的总和面积的五倍以上，所述设计兼顾到发光效率以及散热等条件而为较佳的配置比例。
另外，本发明的另一较佳实施例是发光组件1的第一主表面21A与第二主表面21B所发出光线的色温差异等于或小于1500K，使发光组件1有更全面一致的发光效果。而在透明基板2的透光特性上，当发光二极管芯片3发出光线的波长范围大于或等于420纳米，和/或当所述光线的波长范围小于或等于470纳米时，在上述透明基板2厚度条件下，透明基板2的光穿透率大于或等于70%。
本发明并不以上述实施例为限。下文将依序介绍本发明的其它较佳实施例，且为了便于比较各实施例的相异处并简化说明，在下文的各实施例中使用相同的符号标注等同的组件，且主要针对各实施例的相异处进行说明，而不再对重复部分进行赘述。
请参考图2A、图2B与图2C，本发明为了获得供电以进行发光，发光二极管芯片3本身包括一第一电极31A与一第二电极31B，所述第一电极31A与第二电极31B则分别与位于透明基板2上的一第一连接导线23A以及一第二连接导线23B电性连接。其中，图2A、图2B与图2C分别揭示了不同形式的发光二极管芯片3以及与导线的耦接方式。图2A为横式发光二极管芯片，其中发光二极管芯片3形成于透明基板2的承载面210上，第一电极31A与第二电极31B以打线方式分别电性耦接于第一连接导线23A与第二连接导线23B；图2B为覆晶式发光二极管芯片，发光二极管芯片3为倒置并通过第一电极31A与第二电极31B与透明基板2耦接，其中第一电极31A与第二电极31B分别以焊接或黏接方式电性耦接于第一连接导线23A与第二连接导线23B；图2C则是于发光二极管芯片3的两端设置第一电极31A与第二电极31B，并将发光二极管芯片3以直立设置的方式使第一电极31A与第二电极31B分别与第一连接导线23A以及第二连接导线23B相连接。
请参考图3A与图3B，本发明的发光组件1还包括一波长转换层4，其设置于第一主表面21A或/与第二主表面21B上，或是直接设置于发光二极管芯片3上，且其可直接接触于发光二极管芯片3，或是与发光二极管芯片3相邻一段距离而不直接接触。波长转换层4含有至少一种荧光粉，如石榴石系、硫酸盐系或硅酸盐系等无机或有机材质的荧光粉，以接收至少部分发光二极管芯片3所发出光线并转换为另一种波长范围的光。例如，当发光二极管芯片3发出蓝光，波长转换层4转换部分蓝光为黄光，而使发光组件1在蓝光与黄光混合下最后发出白光。另外由于第一主表面21A光源主要是发光二极管芯片3的发光面直接出光，而第二主表面21B光源则是发光二极管芯片3的光线穿透透明基板2发出的光，发光组件1的两个表面的光线强度不同，所以本发明的另一较佳实施例为发光组件1于第一主表面21A与第二主表面21B上的波长转换层4的荧光粉含量相应配置，其中第一主表面21A对第二主表面21B上的荧光粉（或发光二极管芯片上的荧光粉对第二主表面21B上的荧光粉）含量比例范围较佳的可从1比0.5至1比3，使发光组件1的光线强度或光形可以符合应用需求，以及使发光组件1的第一主表面21A与第二主表面21B所发出光线的色温差异等于或小于1500K，提升发光组件1的波长转换效率与发光效果。
请参考图4A。图4A为本发明的另一较佳实施例的发光组件1的剖面示意图。如图4A所示，本实施例的发光组件10包括一透明基板2与至少一多方向出光的发光二极管芯片14。透明基板2具有一承载面210与一第二主表面21B彼此相对设置。发光二极管芯片14设置于透明基板2的承载面210上，且发光二极管芯片14包括一第一电极16与一第二电极18，用以作外部电性连接。发光二极管芯片14未被透明基板2遮蔽的一发光面34，与未被发光二极管芯片14覆盖的部分承载面210共同形成一第一主表面21A。
发光二极管芯片14包括一基底141、一N型半导体层142、一主动层143与一P型半导体层144。在本实施例中，发光二极管芯片14的基底141可利用一芯片接合层28黏着于透明基板2上。在材料的选择上，芯片接合层28的折射率较佳可介于基底141的折射率与透明基板2的折射率之间，通过这种设置可增加出光量。另外，芯片接合层28可为一透明胶或其他适合的接合材料。第一电极16与第二电极18为相对芯片接合层28设置于发光二极管芯片14的另一面，并分别与P型半导体层144以及N型半导体层142电性连接（图未示第二电极18与N型半导体层142的连接关系）。第一电极16与第二电极18的上表面位于相同水平位置且可为金属电极，但不以此为限。另外，发光组件1还包括一第一连接导线20、一第二连接导线22以及一波长转换层4。第一连接导线20与第二连接导线22设置于透明基板2上，并可为例如金属连接导线或其他导电图案，但不以此为限。第一电极16与第二电极18分别与第一连接导线20与第二连接导线22电性连接，且连接方式可利用打线(wire bonding)或焊接方式，但不以此为限。波长转换层4设置于透明基板12上，并可包覆发光二极管芯片14。另外，波长转换层4还可进一步设置并覆盖透明基板2的第二主表面21B。
另外，为了增加光线从透明基板2离开的出光量并使出光的分布均匀，透明基板2的主要表面可选择性地分别具有一非平面结构12M。非平面结构12M可为各式凸出或凹陷的几何结构，例如金字塔、圆锥体、半球体或三角柱等，且非平面结构12M的排列可为规则性排列或随机性排列。另外，透明基板2的主要表面上也可选择性地设置有一类金刚石碳膜(diamond-like carbon, DLC) 25，用以增加导热及散热效果。
请参考图4B。图4B为本发明的另一较佳实施例的发光组件的剖面示意图。与图4A的实施例相较，在本实施例的发光组件1中，第一电极16与第二电极18与一第一芯片接合层28A设置于发光二极管芯片14的同一表面，并以覆晶方式(flip chip)分别与第一连接导线20与第二连接导线22电性连接。其中，第一连接导线20与第二连接导线22可分别延伸至第一电极16与第二电极18的下方，且第一电极16与第二电极18可利用一第二芯片接合层28B分别与第一连接导线20与第二连接导线22电性连接。第二芯片接合层28B可为导电凸块(conductive bump)例如金凸块(gold bump)或锡铅凸块(solder bump)、导电胶(conductive glue)例如银胶，或共晶层(eutectic layer)例如金锡(Au-Sn)合金共晶层或铟铋锡合金(In-Bi-Sn alloy)共晶层，但不以此为限。在使用第二芯片接合层28B的状况下，第一芯片接合层28A例如透明胶可省略，或是由波长转换层4加以取代。
请参考图5，图5为本发明的另一较佳实施例的发光组件的立体示意图。如图5所示，本发明的发光组件310包括透明基板2、至少一发光二极管芯片3、一第一连接电极311A、一第二连接电极311B与至少一波长转换层4。其中发光二极管芯片3设置于透明基板2的承载面210上，而形成发光的一第一主表面21A。在所述实施例中，发光二极管芯片3的一出光角度大于180度，且发光二极管芯片3所发出的至少部分光线可射入透明基板2，而射入光线至少部分可从对应第一主表面21A的一第二主表面21B出光，部分从透明基板2其他表面出光，进而达到多面或六面发光的发光效果。第一连接电极311A以及第二连接电极311B分别设置于透明基板2上两端或同侧（图未示），并分别为透明基板2上的一第一连接导线与一第二连接导线所延伸的组件对外电极，所以第一连接电极311A与第二连接电极311B分别与发光二极管芯片3电性连接。波长转换层4至少覆盖发光二极管芯片3并暴露至少部分第一连接电极311A与第二连接电极311B，其中波长转换层4至少部分吸收发光二极管芯片3和/或透明基板2所发出的光线，并转换成另一波长范围的光线，然后与未被吸收的光线混光，增加发光组件310的发光波长范围与发光效果。由于本实施例的发光组件310具有分别设置于透明基板2上相对两端的第一连接电极311A与第二连接电极311B，所以发光组件310可独自完成制作后再与适合的承载座进行结合，而不需使用传统发光二级管封装制程，因此可达到提升整体制造良率、简化结构以及增加所配合的承载座设计变化等效果。
请参考图6A，本发明的一实施例为使用前述发光组件的发光装置11，其中发光装置11还包括一承载座5，使发光组件的透明基板2可以立设于其上并耦接于所述承载座5，且透明基板2与承载座5之间具有一第一夹角θ1，所述第一夹角θ1角度可为固设或根据发光装置光形需要调动，其中较佳实施例的第一夹角θ1角度范围介于30度至150度之间。
请参考图6B，本发明的发光装置11的承载座5还包括一电路基板6与外部电源耦接，并电性耦接于透明基板2上的第一连接导线以及第二连接导线（图未示），而与发光二极管芯片3电性连接，使外部电源通过电路基板供应发光二极管芯片3发光所需电源。若无设置所述电路基板6，发光二极管芯片3也可直接通过第一连接导线以及第二连接导线（图未示）电性连接于承载座5，使外部电源可经由承载座5对所述发光二极管芯片3供电。
请参考图6C，本发明的发光装置11还包括一反射镜或滤波器8设置于第二主表面21B上或承载面上210，所述反射镜或滤波器8可反射所述发光二极管芯片3所发出至少部分光线，并使部分射入所述透明基板2的光线改由所述第一主表面21A射出。所述反射镜8包括至少一金属层或一布拉格反射镜(Bragg reflector)，但不以此为限。其中，布拉格反射镜可由多层具有不同折射率的介电薄膜所堆栈而构成，或是由多层具有不同折射率的介电薄膜与多层金属氧化物所堆栈而构成。
请参考图6D，本发明的发光装置11的透明基板2还包括一类金刚石碳膜(diamond-like carbon, DLC) 9，其中所述类金刚石碳膜9设置于透明基板2的承载面210和/或第二主表面21B上，以增加导热及散热效果。
请参考图7A。图7A为本发明的一较佳实施例的发光装置示意图。如图7A所示，本实施例的发光装置10包括一发光组件与一承载座26，其中所述发光组件包括一透明基板2与至少一发光二极管芯片14，且发光组件嵌入所述承载座26内，并通过连接导线20、22分别与所述承载座的电极30、32电性连接，使一电源可通过所述电极30、32提供驱动电压V+, V-以驱动所述发光二极管芯片14发出光线L。发光二极管芯片14包括一第一电极16与一第二电极18，并利用打线方式(wire bonding)与第一连接导线20与第二连接导线22电性连接，但不以此为限。另外发光二极管芯片14所发出光线L的出光角大于180度或具有多个发光面，使得所述发光组件的出光方向包括从第一主表面21A及第二主表面21B出光，且部分光线也可由发光二极管芯片14和/或透明基板2的四个侧壁所射出，使发光组件具有六面发光或全方向等多方向出光特性。
发光组件还包括一波长转换层4设置于发光二极管芯片14、第一主表面21A或第二主表面21B上。其中波长转换层4可转换至少部分发光二极管芯片14所发出的光线为另一波长范围的光，使发光组件发出特定光色或波长范围较大的光线，例如发光二极管芯片14产生的部分蓝光在照射到波长转换层4后可转换成为黄光，而发光组件即可发出由蓝光与黄光混合成的白光。另外，透明基板2可以非平行方式和/或平行方式直接或间接固设于承载座26上。例如，透明基板2的侧壁以垂直方式固设于承载座26上，或将基板2平放于承载座26上，但不以此为限。由于透明基板2选择具有良好的热传导特性的材料，发光二极管芯片14所产生的热能可快速通过透明基板12传递至承载座26以进行散热，所以本发明的发光装置可使用高功率的发光二极管芯片，但较佳实施例的发光装置是在同样功率条件下，改用多个较小功率的发光二极管芯片设置于基板12上，以充分利用基板12的热传导特性，如本实施例的发光二极管芯片的功率可小于或等于例如0.2瓦特，但不以此为限。
请参考图7B。图7B为本发明的另一较佳实施例的发光装置的外观示意图。与图7A相较，发光装置10’包括若干个发光二极管芯片14，且至少部分发光二极管芯片14以串联方式彼此电性连接。其中，各发光二极管芯片14分别包括一第一电极16与一第二电极18，串联头端的一个发光二极管芯片14的第一电极16与第一连接导线20电性连接，而尾端的另一个发光二极管芯片14的第二电极18与第二连接导线22电性连接，但不以此为限，发光二极管芯片14也可利用并联或串并联方式电性连接。本实施例的发光二极管芯片14可以选自发出同一色光的发光二极管芯片，例如蓝光发光二极管芯片，或根据应用需求使用组合不同色光的发光二极管芯片。在这种状况下搭配波长转换层4的做法更可增加发光装置10’发出各种光色的弹性。
请参考图8。图8为本发明的另一较佳实施例的发光装置的外观示意图。与图7相较，本实施例的发光装置50还包括一支架51，用以连接发光组件与承载座26，其中发光组件的透明基板2通过一组件接合层52固设于支架51的一侧，而支架51的另一侧可嵌设于承载座26上。另外支架51为可弹性调整角度，使发光组件与承载座26的夹角介于30度至150度之间。支架51的材质可包括选自铝金属、复合式金属材料、铜导线、电线、陶瓷基板或印刷电路板之任一。
请参考图9A、图9B与图9C，当本发明中的透明基板2设置于承载座5上时，较佳实施例为可通过插接或是黏接的方式来达成两者的接合。
如图9A所示，透明基板2为布置于承载座5上，并插接于承载座5的单孔式插槽61，使发光组件通过连接导线与所述插槽61电性耦接。此时透明基板2上的发光二极管芯片(图未示)与承载座5的电源供应相耦接，且透明基板2上的导电图案或连接导线延伸至透明基板2边缘并整合为具有若干个导电触片的金手指结构或如连接电极311A和311B，也就是电性端口。插槽61可让透明基板2***，使发光二极管芯片(图未示)在获得承载座5供电的同时，透明基板2也被固设于承载座5的插槽61。
请参考图9B，其为通过插接透明基板2于承载座5上多孔式插槽的结构示意图。在此实施例中，此时透明基板2具有至少一双插脚结构，其中一个插脚可为电性正极，另一个则可为电性负极，两处都为具有导电触片作为端口。而对应地，在承载座5则具有至少两个与插脚***面尺寸相符的插槽61，使透明基板2可与承载座5顺利接合，并让发光二极管芯片获得供电。
请参考图9C，为通过组件接合层以黏接的方式将透明基板2与承载座5接合。在黏接的过程中，可以通过金、锡、铟、铋、银等金属做焊接辅助而接合，或是使用具导电性的硅胶或是环氧树脂辅助固设透明基板2，并可使发光组件的导电图案或连接导线借助所述组件接合层与承载座上的电极电性连接。
请参考图10A与图10B，本实施例的发光装置11主要组成同上述实施例所述，其中承载座5可为一金属基板如可弯折的铝质金属、复合式含铝材料、铜导线或电线构成，也可为陶瓷基板或印刷电路板。承载座5的表面或是侧边具有至少一支架62，所述支架62为与承载座5分离或一体化的机构件。发光组件可通过黏接或焊接的方式与支架62相耦接，也就是借助组件接合层63将透明基板2固设于承载座5，并与承载座5无支架的部分的表面维持具有第一夹角θ1，且承载座5无支架的部分的表面也可设置发光二极管芯片以提升发光装置11的发光效果；另外，发光组件也可通过插接（图未示）的方式与支架62相连接，也就是借助连接器结合发光组件与支架和/或支架与承载座而将透明基板2固设于承载座5。由于承载座5与支架62可弯折，因此增加了发光装置11在应用时的灵活性，同时可使用若干个不同发光波长的发光组件组合出不同光色，使发光装置11具有色彩变化性以满足不同需求。
请参考图11。如图11所示，本实施例的发光装置包括至少一发光组件1及一承载座5，其中所述承载座5包括至少一支架62以及至少一电路图案P。发光组件1的主要组成可如上述实施例所述，并以透明基板的一端与支架62相耦接，以避免或减少支架62对发光组件1出光的遮蔽效果。承载座5可为铝质金属基板、复合式铝质金属基板、铜导线或电线构成，也可为陶瓷基板或印刷电路板，支架62可自承载座5的一部分加以切割并弯折一角度(如上述图10A与图10B的第一夹角θ1)而成。电路图案P设置于承载座5上，并具有至少1组电性端点与一电源电性连接，且有一部分延伸至支架62与发光组件1电性连接，使所述发光组件1可通过承载座5的电路图案P与电源电性连接。另外，承载座5还包括至少一孔洞H或至少一缺口G，使固设件如螺丝、钉子或插销等等可通过所述孔洞H或缺口G将承载座5与其他组件依发光装置应用情形作进一步构装或安装，同时孔洞H或缺口G也增加承载座5的散热面积，提升发光装置的散热效果。
请参考图12。图12为本发明的另一较佳实施例的发光装置的装置基座的立体示意图。如图12所示，本实施例的装置基座322包括一承载座5以及至少一支架62，与图11的实施例相较，本实施例的支架62还包括至少一条状部342与一缺口330，，其中电极30、32分别设置于缺口330的两侧或同侧（图未示），条状部342至少构成所述缺口330的一边墙。一发光组件对应所述缺口330与所述支架62耦接，且所述发光组件的连接导线与电极30、32电性连接，使所述发光组件可通过支架62及承载座上的电路图案与一电源电性耦接而被驱动。其中缺口330尺寸需不小于发光组件的一主要出光面，使发光组件面对支架62方向的出光不被支架62遮蔽。支架62与承载座5之间的连接处可为一可活动设计，以使支架62与承载座5之间夹角可视需要进行调整。
请参考图12与图13。图13为本发明的另一较佳实施例的发光装置的立体示意图。与图12的实施例相较，图13所示的发光装置302还包括至少一有若干个缺口330的支架62，其中所述若干个缺口330分别设置于支架62的两边，使条状部342至少同时构成所述若干个缺口330的一边墙。若干个发光组件310与所述若干个缺口330对应设置，且各发光组件310的导电图案或连接电极(图未示)分别与电极30以及电极32对应设置并电性连结。本实施例的发光装置302还进一步可包括若干个支架62，各设置有发光组件310的支架62与承载座5之间夹角可视需要各自进行调整，换句话说，至少部分支架62与承载座5之间的夹角可彼此相异以达到所需的发光效果，但并不以此为限。另外也可在相同支架或不同支架设置不同发光波长范围的发光组件组合，使发光装置的色彩效果更丰富。
为了提高亮度与改善发光效果，本发明的另一实施例的发光装置将若干个透明基板所形成的发光组件同时布置于上述实施例的承载座或其他承载机构上，此时可采用对称或非对称排列的形式做布置，较佳的对称布置方式也就是将多个透明基板所形成的发光组件以点对称或线对称的形式设置于承载机构上。请参考图14A、图14B、图14C与图14D，各实施例的发光装置在各种不同形状的承载机构60上设置若干个发光组件，并且以点对称或线对称的形式让整体发光装置11的出光能够均匀(发光二极管芯片省略示意)，所述发光装置11的出光效果还可通过改变上述的第一夹角的大小而再做进一步的调整与改善。如图14A所示，发光组件之间以点对称方式夹90度角，此时从发光装置四面的任一面往发光装置看均正对至少两个发光组件；图14B所示的发光装置的发光组件之间夹角小于90度；图14D所示的发光装置的发光组件之间夹角大于90度。另一实施例则以非对称布置方式将多个发光组件至少部分集中或分散设置，以达成发光装置于不同应用时的光形需要（图未示）。
请参考图15。图15为本发明的另一较佳实施例的发光装置的剖面示意图。如图15所示，发光装置301包括发光组件310以及一支架321。支架321包括一缺口330，且发光组件310与缺口330对应设置。其中，本实施例的支架321的延伸部可当作插脚或弯折成表面焊接所需接垫，用以固设或/及电性连结于其他所需的组件例如承载座。由于发光组件310的一出光面设置于缺口330内，所以不论支架321是否为透光材料，发光装置301皆可保有六面发光的多方向发光效果。
请参考图16A，为本发明具体实施例的发光装置，所述发光装置包括一长管形的灯壳7、至少一发光组件1以及一承载机构60，其中发光组件1设置于承载机构60上并至少一部分位于长管形的灯壳7所形成的空间内。又请参考图16B，此实施例包括两个以上发光组件1设置于灯壳7内，这些发光组件1的第一主表面21A之间是以不互相平行的方式做排列。另外，发光组件1至少部分置于灯壳7所形成空间内，且不紧贴灯壳7的内壁，较佳的实施例为发光组件1与灯壳7之间有一大于或等于500微米(μm)的距离D；但也可设计以灌胶方式形成灯壳7，并使所述灯壳7至少部分包覆并直接接触于所述发光组件1。
请参考图16C，本发明的另一具体实施例的发光装置，其中所述发光装置的灯壳7具有至少一个罩面71，所述罩面71可为印刷有广告的版面或其他需要背光源的显示设备，且本发明的发光组件1的第一主表面21A和第二主表面21B所提供的光照形成罩面71的背光，其中，发光组件1与罩面71之间形成的第二夹角的角度范围介于0度~45度(第二夹角于图中为0度，故未示)。为了确保透明基板以及多方向出光的发光二极管芯片所组合成的发光组件或发光板/发光片所产生的光能均匀的穿透灯壳7，发光组件1至少部分置于灯壳7所形成之空间内，且基本上不紧贴灯壳7的内壁，较佳的实施例为发光组件1与灯壳7之间有一大于或等于500微米的距离D；但另也可设计以灌胶方式形成灯壳7，并使灯壳7至少部分包覆并直接接触于透明基板2。
请参考图16D、图16E、图16F与图16G，为本发明的另一系列具体实施例，发光装置进一步包括一球形的灯壳7以及底座64。在图16D中，与上述实施例相较，本实施例的发光装置还包括一球形的灯壳7一承载座5进一步设置于一底座64上，其中所述底座64可为传统灯泡底座，所述灯壳7可与底座64耦接并包覆发光组件与承载座5，或灯壳7可直接与承载座5耦接而包覆发光组件。底座64的形式可为平台或是另有承载突部，如图16E所示。在16F图中，灯壳7内侧涂布有波长转换层4，可让发光二极管芯片3所产生的光线至少有部分在离开灯壳7之前可被转换成另一波长范围的光。而在16G图中，则揭示了使用双层的灯壳7与灯壳7’的设计，灯壳7与灯壳7’之间具有一空间S，利用灯壳7、灯壳7’以及两者之间的空间S可使发光装置在花纹和色彩等发光效果上做进一步变化。
请参考图17与图18，图17为本发明的另一较佳实施例的灯条的示意图，图18为本发明的另一较佳实施例的发光装置的立体示意图。如图17所示，本实施例的灯条323包括若干个缺口330。灯条323具有一延伸方向X，且缺口330沿延伸方向X排列设置。若干个多方向出光的发光组件对应灯条323的缺口330设置而形成一发光灯条，但并不以此为限。另外，灯条323还包括若干个不同电性的电极30和32、一第一连外电极350A以及一第二连外电极350B。电极30和32分别设置于各缺口330的两侧或同侧（图未示）。第一连外电极350A以及第二连外电极350B分别与各电极30和32电性连接并设置于灯条323的两侧。如图18所示，发光装置303包括上述实施例的灯条323以及一装置框架360。其中，设置有发光组件310的灯条323可视需要以垂直、水平或斜放的方式设置于装置框架360上，灯条323可借助位于两侧的第一连外电极350A以及第二连外电极350B通过装置框架360与一电源电性连结，但并不以此为限。此外，发光装置303也可视需要搭配适合的光学膜（例如扩散膜）以调整装置框架360中发光组件310所形成的发光效果。
请参考图19，图19为本发明的另一较佳实施例的发光装置的示意图。如图19所示，发光装置304包括若干个发光组件310以及一承载座324。承载座324包括若干个缺口330，缺口330以一数组方式排列设置，且各发光组件310与缺口330对应设置。本实施例的各发光组件310于缺口330的连接方式与上述实施例相似，所以不再赘述。在本实施例中，承载座324还包括第一连外电极350A以及第二连外电极350B，用以与其他外部组件电性连接。另外，本实施例的发光装置304可用于广告牌或直下式背光模块，且承载座324较佳实施方式为具有透光性质，但并不以此为限。
综上所述，本发明的发光组件使用透明基板以及出光角大于180度的发光二极管芯片，因此具有六面发光或全方向发光等的多方向发光效果，且可提升发光效率并改善现有技术中发光二极管的发光组件光型不佳的问题。另外，透明基板包括选择自具有良好的热传导特性的材料，使发光二极管芯片所产生的热能可快速通过透明基板进行散热。
本发明所揭示的发光组件或发光板/发光片，为将发光二极管芯片设置于透明基板上而形成的，所以本发明的发光组件可被有效且充分的灵活运用；并且发光组件的两个主要面都可出光，因此能在最少的供电下获得最大的出光效率，并有均匀的出光效果，而无论是应用于灯泡、灯管、广告牌等领域，都可展现其发光效果佳、低耗电量以及出光均匀等优点，实为一具经济和实用价值的发光组件。

Claims (30)

1.一种发光组件，其特征在于，包括：
一透明基板，具有一承载面与一第二主表面彼此相对设置；以及
若干个发光二极管芯片，至少部分的所述发光二极管芯片设置于所述承载面上，并与未设置所述发光二极管芯片的部分所述承载面形成可发光的一第一主表面，其中各所述发光二极管芯片包括一第一电极与一第二电极；
所述发光二极管芯片中至少一个所述发光二极管芯片的发光方向包括经过所述透明基板并从所述第二主表面出光。
2.根据权利要求1所述的发光组件，其特征在于，还包括至少一波长转换层，设置于所述发光二极管芯片、所述第一主表面或所述第二主表面上，所述波长转换层至少部分吸收所述发光二极管芯片所发出的光线，并转换为不同波长范围的光线。
3.根据权利要求2所述的发光组件，其特征在于，所述波长转换层设置于所述第一主表面与所述第二主表面上，且不同位置的所述波长转换层所含荧光粉比例为1比0.5至1比3。
4.根据权利要求1所述的发光组件，其特征在于，所述发光二极管芯片的功率在0.2瓦特以下。
5.根据权利要求1所述的发光组件，其特征在于，所述透明基板的材质包括选自氧化铝(Al2O3)、含有氧化铝的蓝宝石、碳化硅(SiC)、玻璃、塑料或橡胶的其中任一种。
6.根据权利要求1所述的发光组件，其特征在于，所述第二主表面具有一非平面结构。
7.根据权利要求1所述的发光组件，其特征在于，还包括一类金刚石碳膜，设置于所述承载面或所述第二主表面上。
8.根据权利要求7所述的发光组件，其特征在于，还包括一光学膜，设置于所述透明基板与所述类金刚石碳膜之间。
9.根据权利要求1所述的发光组件，其特征在于，至少一个所述发光二极管芯片的出光角度大于180度。
10.根据权利要求1所述的发光组件，其特征在于，所述透明基板材质包括蓝宝石且厚度大于或等于200微米。
11.根据权利要求1所述的发光组件，其特征在于，所述第一电极与所述第二电极分别与所述透明基板上的一第一连接导线以及一第二连接导线电性连接。
12.根据权利要求1所述的发光组件，其特征在于，所述第一主表面与所述第二主表面所发出光线的色温差异等于或小于1500K。
13.根据权利要求1所述的发光组件，其特征在于，所述透明基板对波长范围大于或等于420纳米，或小于或等于470纳米的光线，所述基板的光穿透率大于或等于70%。
14.根据权利要求1所述的发光组件，其特征在于，所述发光二极管芯片均具有一发光面，且所述第一主表面或所述第二主表面的面积为所述发光二极管芯片的发光面的总面积5倍以上。
15.根据权利要求2所述的发光组件，其特征在于，所述波长转换层设置于所述发光二极管芯片与所述第二主表面上，且不同位置的波长转换层所含荧光粉比例为1比0.5至1比3。
16.根据权利要求1所述的发光组件，其特征在于，还包括一反射镜或滤波器，设置于所述第二主表面上或承载面上。
17.根据权利要求1所述的发光组件，其特征在于，至少部分所述发光二极管芯片设置于所述第二主表面上，且所述承载面与所述第二主表面上的所述发光二极管芯片对应交错排列。
18.一种发光装置，其特征在于，包括至少根据权利要求1所述的发光组件，以及一承载座；所述发光组件设置于所述承载座上。
19.根据权利要求18所述的发光装置，其特征在于，所述发光组件与所述承载座间有一第一夹角，且所述第一夹角的角度范围包括30度至150度。
20.根据权利要求18所述的发光装置，其特征在于，还包括一支架与所述承载座耦接，且所述发光组件固设于所述支架上。
21.根据权利要求20所述的发光装置，其特征在于，所述支架可弯折，使所述发光组件与所述承载座间有所述第一夹角。
22.根据权利要求18所述的发光装置，其特征在于，还包括若干个所述发光组件，且至少部分所述发光组件以点对称或线对称方式设置于所述承载座上。
23.根据权利要求22所述的发光装置，其特征在于，还包括若干个支架，且至少部分所述发光组件分别设置在所述支架。
24.根据权利要求23所述的发光装置，其特征在于，至少部分所述支架与所述承载座之间的夹角角度相异。
25.根据权利要求20所述的发光装置，其特征在于，所述支架至少具有一缺口，且所述发光组件对应所述缺口固设于所述支架上。
26.根据权利要求20所述的发光装置，其特征在于，所述支架与所述承载座一体化。
27.根据权利要求20所述的发光装置，其特征在于，所述支架的材质可包括选自铝质金属、复合式金属材料、铜导线、电线、陶瓷基板或印刷电路板。
28.根据权利要求18所述的发光装置，其特征在于，所述承载座包括至少一缺口或孔洞。
29.根据权利要求18所述的发光装置，其特征在于，还包括若干个所述发光组件以及一支架，所述支架与所述承载座耦接，所述支架包括若干个缺口相对设置，且至少部分所述发光组件对应所述缺口固设于所述支架上。
30.一种发光装置，其特征在于，包括至少根据权利要求1所述的发光组件以及一支架；所述发光组件设置于所述支架上。
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103912808A (zh) * 2014-03-19 2014-07-09 江苏日月照明电器有限公司 一种led发光组件及其灯具
CN104934521A (zh) * 2014-03-18 2015-09-23 璨圆光电股份有限公司 半导体发光元件及其发光装置
CN107887369A (zh) * 2016-09-30 2018-04-06 王定锋 一种led双色灯条及制作方法
CN108884972A (zh) * 2016-03-21 2018-11-23 欧司朗光电半导体有限公司 灯丝和其制造以及具有灯丝的发光机构
CN108870104A (zh) * 2018-08-16 2018-11-23 四川蓝景光电技术有限责任公司 单点外漏型led灯
CN111486351A (zh) * 2014-08-07 2020-08-04 晶元光电股份有限公司 照明装置

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9269870B2 (en) 2011-03-17 2016-02-23 Epistar Corporation Light-emitting device with intermediate layer
CN203277380U (zh) * 2012-05-29 2013-11-06 璨圆光电股份有限公司 发光组件及其发光装置
US9166116B2 (en) 2012-05-29 2015-10-20 Formosa Epitaxy Incorporation Light emitting device
DE202013012758U1 (de) 2012-12-06 2019-04-29 Seoul Viosys Co., Ltd. Lichtemittierende Diode und Anwendung dafür
US9536924B2 (en) 2012-12-06 2017-01-03 Seoul Viosys Co., Ltd. Light-emitting diode and application therefor
TWI540768B (zh) * 2012-12-21 2016-07-01 鴻海精密工業股份有限公司 發光晶片組合及其製造方法
KR20140096722A (ko) * 2013-01-29 2014-08-06 엘지이노텍 주식회사 램프 유닛
TWI626395B (zh) * 2013-06-11 2018-06-11 晶元光電股份有限公司 發光裝置
US20150003058A1 (en) * 2013-07-01 2015-01-01 Biao Zhang Led light bulb
TWI642874B (zh) 2013-09-11 2018-12-01 晶元光電股份有限公司 發光二極體組件以及相關之照明裝置
CN103545458B (zh) * 2013-10-18 2019-06-11 京东方科技集团股份有限公司 照明装置及其制作方法
TWM473612U (zh) * 2013-10-25 2014-03-01 Unity Opto Technology Co Ltd 發光二極體支架及其泡燈
CN203948978U (zh) * 2013-11-25 2014-11-19 璨圆光电股份有限公司 发光装置
JP2015135918A (ja) * 2014-01-17 2015-07-27 豊田合成株式会社 発光装置およびその製造方法
CN103953863A (zh) * 2014-04-23 2014-07-30 广东聚科照明股份有限公司 一种360°全周光灯条
CN103953896A (zh) * 2014-04-23 2014-07-30 广东聚科照明股份有限公司 一种360°全周光灯丝装置
WO2015170814A1 (en) * 2014-05-09 2015-11-12 Lg Electronics Inc. Apparatus of light source for display and apparatus of display using the same
TW201545378A (zh) * 2014-05-19 2015-12-01 Achrolux Inc 封裝結構及其製法
KR102199991B1 (ko) * 2014-05-28 2021-01-11 엘지이노텍 주식회사 발광 소자 및 이를 구비한 라이트 유닛
US10739882B2 (en) * 2014-08-06 2020-08-11 Apple Inc. Electronic device display with array of discrete light-emitting diodes
CN105509001A (zh) * 2014-09-26 2016-04-20 罗建华 一种led灯板
US20180231191A1 (en) * 2014-10-01 2018-08-16 Koninklijke Philips N.V. Light source with tunable emission spectrum
CN104359027A (zh) * 2014-11-03 2015-02-18 黎昌兴 发光体装置于透射导热基本的led光源
TW201617548A (zh) * 2014-11-06 2016-05-16 艾笛森光電股份有限公司 Led燈蕊結構
CN105737103B (zh) * 2014-12-10 2018-07-20 深圳市光峰光电技术有限公司 波长转换装置及相关荧光色轮和投影装置
US9958115B2 (en) * 2015-07-22 2018-05-01 Qin Kong LED tube grow light
US10209427B2 (en) * 2015-10-30 2019-02-19 Alson Technology Limited Electronic device
KR102435458B1 (ko) * 2015-12-04 2022-08-30 엘지디스플레이 주식회사 백라이트 유닛용 광원 패키지 및 그를 포함하는 광원 장치
KR20170131910A (ko) * 2016-05-23 2017-12-01 주식회사 루멘스 발광소자 및 이를 포함하는 발광벌브
DE102016113206A1 (de) * 2016-07-18 2018-01-18 Osram Opto Semiconductors Gmbh Strahlung emittierende Vorrichtung
DE102016117594A1 (de) * 2016-09-19 2018-03-22 Osram Opto Semiconductors Gmbh Licht emittierende Vorrichtung
KR102430500B1 (ko) * 2017-05-30 2022-08-08 삼성전자주식회사 반도체 발광소자 및 이를 이용한 led 모듈
US20190139948A1 (en) * 2017-11-03 2019-05-09 Xiamen Eco Lighting Co. Ltd. Led lighting apparatus
DE102017129975A1 (de) 2017-12-14 2019-06-19 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauteils und Halbleiterbauteil
KR102582424B1 (ko) * 2017-12-14 2023-09-25 삼성전자주식회사 발광소자 패키지 및 이를 이용한 디스플레이 장치
US10069047B1 (en) * 2018-01-16 2018-09-04 Leedarson Lighting Co. Ltd. LED device
CN108417691A (zh) * 2018-04-18 2018-08-17 东莞市恩瑞精密电子有限公司 线光源制作方法
CN110737085B (zh) * 2018-07-18 2021-11-30 深圳光峰科技股份有限公司 波长转换装置
CN113826225A (zh) 2019-03-18 2021-12-21 英特曼帝克司公司 包括光致发光层状结构的封装白色发光装置
US11342311B2 (en) * 2019-03-18 2022-05-24 Intematix Corporation LED-filaments and LED-filament lamps utilizing manganese-activated fluoride red photoluminescence material
US11781714B2 (en) 2019-03-18 2023-10-10 Bridgelux, Inc. LED-filaments and LED-filament lamps
CN112086413B (zh) * 2019-06-14 2024-04-23 Jmj韩国株式会社 半导体封装
US11171118B2 (en) * 2019-07-03 2021-11-09 Micron Technology, Inc. Semiconductor assemblies including thermal circuits and methods of manufacturing the same
US11206749B2 (en) 2019-08-02 2021-12-21 Micron Technology, Inc. Tubular heat spreaders for memory modules and memory modules incorporating the same
CN115398654A (zh) * 2020-04-30 2022-11-25 亮锐有限责任公司 具有集成光学过滤元件的彩色led
TWI744194B (zh) * 2021-02-23 2021-10-21 晶呈科技股份有限公司 發光二極體封裝結構及其製作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101192601A (zh) * 2006-11-30 2008-06-04 东芝照明技术株式会社 具有半导体发光元件的照明装置
US20110163683A1 (en) * 2011-02-22 2011-07-07 Quarkstar, Llc Solid State Lamp Using Light Emitting Strips
CN102194957A (zh) * 2010-03-19 2011-09-21 富士康(昆山)电脑接插件有限公司 发光二极管芯片承载座
CN102339927A (zh) * 2010-07-27 2012-02-01 展晶科技(深圳)有限公司 发光二极管
CN203277380U (zh) * 2012-05-29 2013-11-06 璨圆光电股份有限公司 发光组件及其发光装置

Family Cites Families (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5718771Y2 (zh) * 1976-05-25 1982-04-20
US5168023A (en) * 1990-07-04 1992-12-01 Matsushita Electric Industrial Co., Ltd. Photosensitive element used in electrophotography
JPH10117018A (ja) * 1996-10-11 1998-05-06 Citizen Electron Co Ltd チップ型発光ダイオード
JP4061005B2 (ja) * 1999-03-31 2008-03-12 シャープ株式会社 発光ダイオードおよびその製造方法並びに発光ダイオードの電気配線基板への搭載方法
US6479046B2 (en) * 2000-08-17 2002-11-12 Joseph C. Dickens Attractants and repellants for colorado potato beetle
JP2002232020A (ja) * 2001-01-31 2002-08-16 Matsushita Electric Ind Co Ltd Ｌｅｄおよびこれを用いた表示装置、照明装置、液晶のバックライト装置並びに投影装置の光源装置
TW511299B (en) * 2001-03-14 2002-11-21 Kuo-Yen Lai Metal substrate with double LED for double side light emission
JP2004134249A (ja) * 2002-10-10 2004-04-30 Mitsubishi Electric Corp 照明装置
TW582122B (en) 2003-01-27 2004-04-01 Opto Tech Corp Light emitting diode package structure
US20050052885A1 (en) 2003-09-04 2005-03-10 Amazing International Enterprise Limited Structure of LED decoration lighting set
JP2005252222A (ja) * 2004-02-03 2005-09-15 Matsushita Electric Ind Co Ltd 半導体発光装置、照明モジュール、照明装置、表示素子、および半導体発光装置の製造方法
JP2005347516A (ja) * 2004-06-03 2005-12-15 Jsr Corp 発光装置
EP1640756A1 (en) * 2004-09-27 2006-03-29 Barco N.V. Methods and systems for illuminating
JP4995722B2 (ja) * 2004-12-22 2012-08-08 パナソニック株式会社 半導体発光装置、照明モジュール、および照明装置
CN1862879A (zh) 2005-01-26 2006-11-15 内部无线公司 低形天线
JP2006216765A (ja) * 2005-02-03 2006-08-17 Nippon Leiz Co Ltd 光源装置
CN1866552A (zh) * 2005-05-18 2006-11-22 光宝科技股份有限公司 光线行进方向改变单元及含有其的模块和发光二极管组件
JP2007165811A (ja) * 2005-12-16 2007-06-28 Nichia Chem Ind Ltd 発光装置
US7569406B2 (en) 2006-01-09 2009-08-04 Cree, Inc. Method for coating semiconductor device using droplet deposition
US8441179B2 (en) * 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
KR100703217B1 (ko) 2006-02-22 2007-04-09 삼성전기주식회사 발광다이오드 패키지 제조방법
JP2007234975A (ja) * 2006-03-02 2007-09-13 Matsushita Electric Ind Co Ltd Ｌｅｄ光源モジュール、エッジ入力型バックライトおよび液晶表示装置
JP2007324578A (ja) * 2006-05-01 2007-12-13 Mitsubishi Chemicals Corp 集積型半導体発光装置およびその製造方法
WO2008060615A1 (en) * 2006-11-15 2008-05-22 The Regents Of The University Of California Transparent mirrorless light emitting diode
TW200825529A (en) * 2006-12-06 2008-06-16 Chi Lin Technology Co Ltd Light mixer and backlight module having it
TW200837925A (en) 2007-01-11 2008-09-16 Matsushita Electric Ind Co Ltd Light source
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
JP5463447B2 (ja) * 2008-01-18 2014-04-09 三洋電機株式会社 発光装置及びそれを備えた灯具
JP5097057B2 (ja) * 2008-08-29 2012-12-12 株式会社沖データ 表示装置
US20100073944A1 (en) 2008-09-23 2010-03-25 Edison Opto Corporation Light emitting diode bulb
TW201015743A (en) * 2008-10-01 2010-04-16 Formosa Epitaxy Inc LED and manufacturing method thereof
MX2011005877A (es) 2008-12-04 2011-09-06 Univ California Método y dispositivo de electroluminiscencia de ánodo de material semiconductor nanoestructurado con inyeccion de electrones.
KR20100076083A (ko) * 2008-12-17 2010-07-06 서울반도체 주식회사 복수개의 발광셀들을 갖는 발광 다이오드 및 그것을 제조하는 방법
JP5266075B2 (ja) * 2009-01-26 2013-08-21 パナソニック株式会社 電球形照明装置
US8382331B2 (en) * 2009-04-03 2013-02-26 Yung Pun Cheng LED lighting lamp
US8079735B1 (en) 2009-03-31 2011-12-20 Usman Vakil Light emitting diode illumination device
TWI495084B (zh) * 2009-07-07 2015-08-01 Epistar Corp 發光元件
US9029898B2 (en) * 2009-08-26 2015-05-12 Formosa Epitaxy Incorporation Light emitting diode and illumination device using same
WO2011033551A1 (ja) * 2009-09-15 2011-03-24 アリスト・エンジニアリング プライベート リミテッド 照明装置
US8021192B2 (en) * 2009-11-13 2011-09-20 Smk Corporation LED illumination apparatus
TWM383697U (en) * 2009-12-30 2010-07-01 Sheng-Yi Zhuang LED lamp set and light-emitting bulb applying the lamp set
KR20110099513A (ko) * 2010-03-02 2011-09-08 삼성엘이디 주식회사 조명 장치
CN102222749A (zh) * 2010-04-19 2011-10-19 展晶科技(深圳)有限公司 发光组件及其模块
CN101846256A (zh) * 2010-05-04 2010-09-29 蔡州 Led光源
TWM389204U (en) 2010-06-03 2010-09-21 Liquidleds Lighting Corp LED illumination lamp
CN102374418B (zh) * 2010-08-20 2014-08-20 光宝电子(广州)有限公司 发光二极管灯具
US8210716B2 (en) * 2010-08-27 2012-07-03 Quarkstar Llc Solid state bidirectional light sheet for general illumination
WO2012031533A1 (zh) 2010-09-08 2012-03-15 浙江锐迪生光电有限公司 LED灯泡及能够4π出光的LED发光条
JP5545547B2 (ja) * 2010-10-07 2014-07-09 東芝ライテック株式会社 光源体および照明器具
JP4778107B1 (ja) * 2010-10-19 2011-09-21 有限会社ナプラ 発光デバイス、及び、その製造方法
EP2631958A1 (en) * 2010-10-22 2013-08-28 Panasonic Corporation Mounting board, light emitting device and lamp
CN201866576U (zh) * 2010-10-28 2011-06-15 王元成 一种led灯泡
KR101726807B1 (ko) * 2010-11-01 2017-04-14 삼성전자주식회사 반도체 발광소자
JP2012099726A (ja) * 2010-11-04 2012-05-24 Stanley Electric Co Ltd Ｌｅｄモジュール及びｌｅｄランプ
US20120118222A1 (en) * 2010-11-15 2012-05-17 Sumitomo Electric Industries, Ltd. METHOD OF MANUFACTURING GaN-BASED FILM
TW201233940A (en) 2010-11-30 2012-08-16 Wintek Corp Light source for crystal lamp
WO2012090356A1 (ja) 2010-12-28 2012-07-05 パナソニック株式会社 発光装置、発光モジュール及びランプ
CN102130239B (zh) * 2011-01-31 2012-11-07 郑榕彬 全方位采光的led封装方法及led封装件
DE102011017195A1 (de) * 2011-04-15 2012-10-18 Osram Opto Semiconductors Gmbh Beleuchtungseinrichtung
US8723665B2 (en) * 2011-07-26 2014-05-13 Tyco Safety Products Canada Ltd. Audio buffering in two-way voice alarm systems
TWI464868B (zh) 2011-09-14 2014-12-11 Lextar Electronics Corp 固態光源模組及固態光源陣列
CN103907211B (zh) * 2011-10-31 2017-03-15 夏普株式会社 发光装置、照明装置以及发光装置的制造方法
US8591072B2 (en) * 2011-11-16 2013-11-26 Oree, Inc. Illumination apparatus confining light by total internal reflection and methods of forming the same
US9395051B2 (en) 2012-04-13 2016-07-19 Cree, Inc. Gas cooled LED lamp
US9010964B2 (en) * 2012-04-26 2015-04-21 Epistar Corporation LED light bulb with interior facing LEDs
CN202733581U (zh) * 2012-08-27 2013-02-13 程敬鹏 一种全角度发光的led灯泡
TWM453804U (zh) 2013-01-25 2013-05-21 Bo-Cheng Lin 具多方向照明之ｌｅｄ燈泡

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101192601A (zh) * 2006-11-30 2008-06-04 东芝照明技术株式会社 具有半导体发光元件的照明装置
CN102194957A (zh) * 2010-03-19 2011-09-21 富士康(昆山)电脑接插件有限公司 发光二极管芯片承载座
CN102339927A (zh) * 2010-07-27 2012-02-01 展晶科技(深圳)有限公司 发光二极管
US20110163683A1 (en) * 2011-02-22 2011-07-07 Quarkstar, Llc Solid State Lamp Using Light Emitting Strips
CN203277380U (zh) * 2012-05-29 2013-11-06 璨圆光电股份有限公司 发光组件及其发光装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104934521A (zh) * 2014-03-18 2015-09-23 璨圆光电股份有限公司 半导体发光元件及其发光装置
CN104934521B (zh) * 2014-03-18 2018-10-23 晶元光电股份有限公司 半导体发光元件及其发光装置
CN103912808A (zh) * 2014-03-19 2014-07-09 江苏日月照明电器有限公司 一种led发光组件及其灯具
CN111486351A (zh) * 2014-08-07 2020-08-04 晶元光电股份有限公司 照明装置
US11677057B2 (en) 2014-08-07 2023-06-13 Epistar Corporation Light emitting device, light emitting module, and illuminating apparatus
CN108884972A (zh) * 2016-03-21 2018-11-23 欧司朗光电半导体有限公司 灯丝和其制造以及具有灯丝的发光机构
US10598316B2 (en) 2016-03-21 2020-03-24 Osram Oled Gmbh Filament, method of producing a filament and a light source including a filament
US10837606B2 (en) 2016-03-21 2020-11-17 Osram Oled Gmbh Filament, method of producing a filament and a light source including a filament
CN107887369A (zh) * 2016-09-30 2018-04-06 王定锋 一种led双色灯条及制作方法
CN108870104A (zh) * 2018-08-16 2018-11-23 四川蓝景光电技术有限责任公司 单点外漏型led灯

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