CN103376099B - 微机电***(mems)驱动器 - Google Patents
微机电***(mems)驱动器 Download PDFInfo
- Publication number
- CN103376099B CN103376099B CN201310127961.4A CN201310127961A CN103376099B CN 103376099 B CN103376099 B CN 103376099B CN 201310127961 A CN201310127961 A CN 201310127961A CN 103376099 B CN103376099 B CN 103376099B
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- China
- Prior art keywords
- command signal
- signal
- driver
- differential
- mems
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000004044 response Effects 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims description 23
- 238000000926 separation method Methods 0.000 claims description 2
- 238000001514 detection method Methods 0.000 description 15
- 230000010355 oscillation Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004590 computer program Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/16—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop
- H03L7/18—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop using a frequency divider or counter in the loop
- H03L7/183—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop using a frequency divider or counter in the loop a time difference being used for locking the loop, the counter counting between fixed numbers or the frequency divider dividing by a fixed number
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5642—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams
- G01C19/5656—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams the devices involving a micromechanical structure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5776—Signal processing not specific to any of the devices covered by groups G01C19/5607 - G01C19/5719
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H2009/02283—Vibrating means
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Signal Processing (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
- Gyroscopes (AREA)
Abstract
Description
Claims (26)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261623407P | 2012-04-12 | 2012-04-12 | |
US61/623,407 | 2012-04-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103376099A CN103376099A (zh) | 2013-10-30 |
CN103376099B true CN103376099B (zh) | 2016-02-03 |
Family
ID=48182693
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2013201854611U Expired - Fee Related CN203349832U (zh) | 2012-04-12 | 2013-04-12 | 用于微机电***mems设备的驱动器及mems*** |
CN201310127961.4A Active CN103376099B (zh) | 2012-04-12 | 2013-04-12 | 微机电***(mems)驱动器 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2013201854611U Expired - Fee Related CN203349832U (zh) | 2012-04-12 | 2013-04-12 | 用于微机电***mems设备的驱动器及mems*** |
Country Status (4)
Country | Link |
---|---|
US (1) | US9094027B2 (zh) |
EP (2) | EP3260814B1 (zh) |
KR (1) | KR101999745B1 (zh) |
CN (2) | CN203349832U (zh) |
Families Citing this family (31)
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US8739626B2 (en) | 2009-08-04 | 2014-06-03 | Fairchild Semiconductor Corporation | Micromachined inertial sensor devices |
CN103221331B (zh) | 2010-09-18 | 2016-02-03 | 快捷半导体公司 | 用于微机电***的密封封装 |
US9278846B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | Micromachined monolithic 6-axis inertial sensor |
EP2616389B1 (en) * | 2010-09-18 | 2017-04-05 | Fairchild Semiconductor Corporation | Multi-die mems package |
US9455354B2 (en) | 2010-09-18 | 2016-09-27 | Fairchild Semiconductor Corporation | Micromachined 3-axis accelerometer with a single proof-mass |
KR101443730B1 (ko) | 2010-09-18 | 2014-09-23 | 페어차일드 세미컨덕터 코포레이션 | 미세기계화 다이, 및 직교 오차가 작은 서스펜션을 제조하는 방법 |
US8813564B2 (en) | 2010-09-18 | 2014-08-26 | Fairchild Semiconductor Corporation | MEMS multi-axis gyroscope with central suspension and gimbal structure |
US10065851B2 (en) | 2010-09-20 | 2018-09-04 | Fairchild Semiconductor Corporation | Microelectromechanical pressure sensor including reference capacitor |
EP2619130A4 (en) | 2010-09-20 | 2014-12-10 | Fairchild Semiconductor | SILICONE CONTINUITY WITH REDUCED CROSS-CAPACITY |
US9398103B2 (en) * | 2011-04-15 | 2016-07-19 | Qualcomm Incorporated | Methods and apparatus for enhancing device performance through flow control |
US9062972B2 (en) | 2012-01-31 | 2015-06-23 | Fairchild Semiconductor Corporation | MEMS multi-axis accelerometer electrode structure |
US8978475B2 (en) | 2012-02-01 | 2015-03-17 | Fairchild Semiconductor Corporation | MEMS proof mass with split z-axis portions |
US9488693B2 (en) | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
EP2647955B8 (en) | 2012-04-05 | 2018-12-19 | Fairchild Semiconductor Corporation | MEMS device quadrature phase shift cancellation |
EP2647952B1 (en) | 2012-04-05 | 2017-11-15 | Fairchild Semiconductor Corporation | Mems device automatic-gain control loop for mechanical amplitude drive |
US9069006B2 (en) | 2012-04-05 | 2015-06-30 | Fairchild Semiconductor Corporation | Self test of MEMS gyroscope with ASICs integrated capacitors |
EP2648334B1 (en) | 2012-04-05 | 2020-06-10 | Fairchild Semiconductor Corporation | Mems device front-end charge amplifier |
US9094027B2 (en) | 2012-04-12 | 2015-07-28 | Fairchild Semiconductor Corporation | Micro-electro-mechanical-system (MEMS) driver |
US9625272B2 (en) | 2012-04-12 | 2017-04-18 | Fairchild Semiconductor Corporation | MEMS quadrature cancellation and signal demodulation |
DE102013014881B4 (de) | 2012-09-12 | 2023-05-04 | Fairchild Semiconductor Corporation | Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren Materialien |
US9759564B2 (en) | 2013-03-15 | 2017-09-12 | Fairchild Semiconductor Corporation | Temperature and power supply calibration |
US9835647B2 (en) | 2014-03-18 | 2017-12-05 | Fairchild Semiconductor Corporation | Apparatus and method for extending analog front end sense range of a high-Q MEMS sensor |
US9342085B2 (en) * | 2014-10-13 | 2016-05-17 | Stmicroelectronics International N.V. | Circuit for regulating startup and operation voltage of an electronic device |
US10323957B2 (en) | 2015-11-23 | 2019-06-18 | Murata Manufacturing Co., Ltd. | Circuitry and method for generating a discrete-time high voltage |
US10730744B2 (en) | 2018-12-28 | 2020-08-04 | Industrial Technology Research Institute | MEMS device with movable stage |
US11320452B2 (en) | 2019-06-26 | 2022-05-03 | Stmicroelectronics, Inc. | MEMS accelerometer self-test using an active mobile mass deflection technique |
US11255670B2 (en) | 2019-06-26 | 2022-02-22 | Stmicroelectronics, Inc. | MEMS gyroscope self-test using a technique for deflection of the sensing mobile mass |
US11162790B2 (en) * | 2019-06-26 | 2021-11-02 | Stmicroelectronics, Inc. | MEMS gyroscope start-up process and circuit |
US11175138B2 (en) | 2019-06-26 | 2021-11-16 | Stmicroelectronics, Inc. | MEMS gyroscope control circuit |
CN112886957B (zh) * | 2021-01-08 | 2024-03-29 | 中国科学院微电子研究所 | 高压放大器及其高压产生电路 |
DE102022213104A1 (de) | 2022-12-06 | 2024-06-06 | Robert Bosch Gesellschaft mit beschränkter Haftung | Mikromechanisches Sensorsystem mit einem Drehratensensor und Verfahren zum Betrieb eines mikromechanischen Sensorsystems mit einem Drehratensensor |
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KR20130116189A (ko) | 2013-10-23 |
EP2650642B1 (en) | 2017-07-12 |
KR101999745B1 (ko) | 2019-10-01 |
US9094027B2 (en) | 2015-07-28 |
EP3260814A1 (en) | 2017-12-27 |
EP2650642A2 (en) | 2013-10-16 |
CN203349832U (zh) | 2013-12-18 |
US20130271228A1 (en) | 2013-10-17 |
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EP3260814B1 (en) | 2020-03-11 |
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