CN103368562B - 准确的90度相位移相器 - Google Patents
准确的90度相位移相器 Download PDFInfo
- Publication number
- CN103368562B CN103368562B CN201310115550.3A CN201310115550A CN103368562B CN 103368562 B CN103368562 B CN 103368562B CN 201310115550 A CN201310115550 A CN 201310115550A CN 103368562 B CN103368562 B CN 103368562B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5607—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks
- G01C19/5621—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks the devices involving a micromechanical structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5607—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks
- G01C19/5614—Signal processing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5776—Signal processing not specific to any of the devices covered by groups G01C19/5607 - G01C19/5719
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0242—Gyroscopes
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Signal Processing (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Gyroscopes (AREA)
Abstract
Description
Claims (24)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261619604P | 2012-04-03 | 2012-04-03 | |
US61/619,604 | 2012-04-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103368562A CN103368562A (zh) | 2013-10-23 |
CN103368562B true CN103368562B (zh) | 2016-03-23 |
Family
ID=49369221
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2013201654653U Expired - Lifetime CN203301454U (zh) | 2012-04-03 | 2013-04-03 | 电子电路 |
CN201310115550.3A Active CN103368562B (zh) | 2012-04-03 | 2013-04-03 | 准确的90度相位移相器 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2013201654653U Expired - Lifetime CN203301454U (zh) | 2012-04-03 | 2013-04-03 | 电子电路 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR102048393B1 (zh) |
CN (2) | CN203301454U (zh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8739626B2 (en) | 2009-08-04 | 2014-06-03 | Fairchild Semiconductor Corporation | Micromachined inertial sensor devices |
US8813564B2 (en) | 2010-09-18 | 2014-08-26 | Fairchild Semiconductor Corporation | MEMS multi-axis gyroscope with central suspension and gimbal structure |
US9278846B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | Micromachined monolithic 6-axis inertial sensor |
EP2616389B1 (en) | 2010-09-18 | 2017-04-05 | Fairchild Semiconductor Corporation | Multi-die mems package |
US9455354B2 (en) | 2010-09-18 | 2016-09-27 | Fairchild Semiconductor Corporation | Micromachined 3-axis accelerometer with a single proof-mass |
KR101443730B1 (ko) | 2010-09-18 | 2014-09-23 | 페어차일드 세미컨덕터 코포레이션 | 미세기계화 다이, 및 직교 오차가 작은 서스펜션을 제조하는 방법 |
CN103221331B (zh) | 2010-09-18 | 2016-02-03 | 快捷半导体公司 | 用于微机电***的密封封装 |
US10065851B2 (en) | 2010-09-20 | 2018-09-04 | Fairchild Semiconductor Corporation | Microelectromechanical pressure sensor including reference capacitor |
EP2619130A4 (en) | 2010-09-20 | 2014-12-10 | Fairchild Semiconductor | SILICONE CONTINUITY WITH REDUCED CROSS-CAPACITY |
US9062972B2 (en) | 2012-01-31 | 2015-06-23 | Fairchild Semiconductor Corporation | MEMS multi-axis accelerometer electrode structure |
US8978475B2 (en) | 2012-02-01 | 2015-03-17 | Fairchild Semiconductor Corporation | MEMS proof mass with split z-axis portions |
KR102048393B1 (ko) * | 2012-04-03 | 2019-11-25 | 페어차일드 세미컨덕터 코포레이션 | 정밀한 직각 위상 변이기 |
US9488693B2 (en) | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
US9069006B2 (en) | 2012-04-05 | 2015-06-30 | Fairchild Semiconductor Corporation | Self test of MEMS gyroscope with ASICs integrated capacitors |
EP2648334B1 (en) | 2012-04-05 | 2020-06-10 | Fairchild Semiconductor Corporation | Mems device front-end charge amplifier |
EP2647955B8 (en) | 2012-04-05 | 2018-12-19 | Fairchild Semiconductor Corporation | MEMS device quadrature phase shift cancellation |
EP2647952B1 (en) | 2012-04-05 | 2017-11-15 | Fairchild Semiconductor Corporation | Mems device automatic-gain control loop for mechanical amplitude drive |
US9625272B2 (en) | 2012-04-12 | 2017-04-18 | Fairchild Semiconductor Corporation | MEMS quadrature cancellation and signal demodulation |
US9094027B2 (en) | 2012-04-12 | 2015-07-28 | Fairchild Semiconductor Corporation | Micro-electro-mechanical-system (MEMS) driver |
DE102013014881B4 (de) | 2012-09-12 | 2023-05-04 | Fairchild Semiconductor Corporation | Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren Materialien |
KR101462772B1 (ko) * | 2013-04-12 | 2014-11-20 | 삼성전기주식회사 | 직각 위상 에러 제거수단을 갖는 자가발진 회로 및 그를 이용한 직각 위상 에러 제거방법 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1206110A (zh) * | 1997-07-14 | 1999-01-27 | 利顿***有限公司 | 惯性传感器的信号处理*** |
CN1272622A (zh) * | 1999-01-22 | 2000-11-08 | 佳能株式会社 | 陀螺仪装置和陀螺仪 |
CN1532524A (zh) * | 2003-03-20 | 2004-09-29 | 日本碍子株式会社 | 激励振荡器主控振动的方法和*** |
CN1603842A (zh) * | 2003-10-03 | 2005-04-06 | 松下电器产业株式会社 | 惯性传感器以及采用该传感器的复合传感器 |
CN203301454U (zh) * | 2012-04-03 | 2013-11-20 | 快捷半导体(苏州)有限公司 | 电子电路 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0000619D0 (en) | 2000-01-13 | 2000-03-01 | British Aerospace | Accelerometer |
US7895894B2 (en) | 2006-11-06 | 2011-03-01 | Seiko Epson Corporation | Driver device, physical quantity measuring device, and electronic instrument |
JP2010190766A (ja) * | 2009-02-19 | 2010-09-02 | Seiko Epson Corp | 発振駆動装置、物理量測定装置及び電子機器 |
-
2013
- 2013-04-03 KR KR1020130036261A patent/KR102048393B1/ko active IP Right Grant
- 2013-04-03 CN CN2013201654653U patent/CN203301454U/zh not_active Expired - Lifetime
- 2013-04-03 CN CN201310115550.3A patent/CN103368562B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1206110A (zh) * | 1997-07-14 | 1999-01-27 | 利顿***有限公司 | 惯性传感器的信号处理*** |
CN1272622A (zh) * | 1999-01-22 | 2000-11-08 | 佳能株式会社 | 陀螺仪装置和陀螺仪 |
CN1532524A (zh) * | 2003-03-20 | 2004-09-29 | 日本碍子株式会社 | 激励振荡器主控振动的方法和*** |
CN1603842A (zh) * | 2003-10-03 | 2005-04-06 | 松下电器产业株式会社 | 惯性传感器以及采用该传感器的复合传感器 |
CN203301454U (zh) * | 2012-04-03 | 2013-11-20 | 快捷半导体(苏州)有限公司 | 电子电路 |
Also Published As
Publication number | Publication date |
---|---|
KR20130112789A (ko) | 2013-10-14 |
CN203301454U (zh) | 2013-11-20 |
CN103368562A (zh) | 2013-10-23 |
KR102048393B1 (ko) | 2019-11-25 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180523 Address after: Arizona, USA Patentee after: Fairchild Semiconductor Corp. Address before: 215021 Sutong Road, Suzhou Industrial Park, Suzhou, Jiangsu 1 Co-patentee before: Fairchild Semiconductor Corp. Patentee before: Fairchild Semiconductor (Suzhou) Co., Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190724 Address after: Floor 1, Building 2, 235 Chengbei Road, Jiading District, Shanghai Patentee after: Shanghai Xirui Technology Co., Ltd. Address before: Arizona, USA Patentee before: Fairchild Semiconductor Corp. |
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CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: Room 307, 3rd floor, 1328 Dingxi Road, Changning District, Shanghai 200050 Patentee after: Shanghai Sirui Technology Co.,Ltd. Address before: Floor 1, building 2, No. 235, Chengbei Road, Jiading District, Shanghai, 201800 Patentee before: Shanghai Silicon Technology Co.,Ltd. |