CN103151263A - 一种晶闸管芯片制备方法 - Google Patents
一种晶闸管芯片制备方法 Download PDFInfo
- Publication number
- CN103151263A CN103151263A CN2013100758236A CN201310075823A CN103151263A CN 103151263 A CN103151263 A CN 103151263A CN 2013100758236 A CN2013100758236 A CN 2013100758236A CN 201310075823 A CN201310075823 A CN 201310075823A CN 103151263 A CN103151263 A CN 103151263A
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- Prior art keywords
- diffusion
- aluminium
- silicon chip
- logical
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 71
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 71
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 54
- 239000010703 silicon Substances 0.000 claims abstract description 54
- 238000009792 diffusion process Methods 0.000 claims abstract description 52
- 238000005498 polishing Methods 0.000 claims abstract description 16
- 238000001259 photo etching Methods 0.000 claims abstract description 11
- 238000001704 evaporation Methods 0.000 claims abstract description 10
- 230000008020 evaporation Effects 0.000 claims abstract description 10
- 238000007796 conventional method Methods 0.000 claims abstract description 6
- 230000007797 corrosion Effects 0.000 claims abstract description 6
- 238000005260 corrosion Methods 0.000 claims abstract description 6
- 239000004411 aluminium Substances 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 18
- 238000003475 lamination Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000002955 isolation Methods 0.000 abstract description 3
- 230000005465 channeling Effects 0.000 abstract 3
- 239000012535 impurity Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000012797 qualification Methods 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- -1 hydrogen potassium oxide Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Thyristors (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310075823.6A CN103151263B (zh) | 2013-03-11 | 2013-03-11 | 一种晶闸管芯片制备方法 |
Applications Claiming Priority (1)
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CN201310075823.6A CN103151263B (zh) | 2013-03-11 | 2013-03-11 | 一种晶闸管芯片制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN103151263A true CN103151263A (zh) | 2013-06-12 |
CN103151263B CN103151263B (zh) | 2015-08-19 |
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Family Applications (1)
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CN201310075823.6A Active CN103151263B (zh) | 2013-03-11 | 2013-03-11 | 一种晶闸管芯片制备方法 |
Country Status (1)
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CN (1) | CN103151263B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104779156A (zh) * | 2014-01-13 | 2015-07-15 | 中芯国际集成电路制造(上海)有限公司 | 铝残留的去除方法 |
CN105448807A (zh) * | 2015-11-20 | 2016-03-30 | 浙江正邦电力电子有限公司 | 一种半导体器件芯片对通隔离制造工艺 |
CN114005743A (zh) * | 2021-10-13 | 2022-02-01 | 华中科技大学 | 一种方片半导体脉冲功率开关及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5998813A (en) * | 1996-01-19 | 1999-12-07 | Sgs-Thomson Microelectronics S.A. | Component for protecting telephone line interfaces |
US6448589B1 (en) * | 2000-05-19 | 2002-09-10 | Teccor Electronics, L.P. | Single side contacts for a semiconductor device |
CN1913130A (zh) * | 2006-08-28 | 2007-02-14 | 汤庆敏 | 一种半导体器件芯片穿通隔离区及pn结的制造工艺 |
CN101901763A (zh) * | 2010-06-28 | 2010-12-01 | 启东吉莱电子有限公司 | 可控硅生产工艺 |
CN101901832A (zh) * | 2010-06-28 | 2010-12-01 | 启东吉莱电子有限公司 | 一种镓扩散形成可控硅穿通结构及其生产方法 |
CN201804873U (zh) * | 2010-06-28 | 2011-04-20 | 启东吉莱电子有限公司 | 一种减少穿通时间的可控硅结构 |
-
2013
- 2013-03-11 CN CN201310075823.6A patent/CN103151263B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5998813A (en) * | 1996-01-19 | 1999-12-07 | Sgs-Thomson Microelectronics S.A. | Component for protecting telephone line interfaces |
US6448589B1 (en) * | 2000-05-19 | 2002-09-10 | Teccor Electronics, L.P. | Single side contacts for a semiconductor device |
CN1913130A (zh) * | 2006-08-28 | 2007-02-14 | 汤庆敏 | 一种半导体器件芯片穿通隔离区及pn结的制造工艺 |
CN101901763A (zh) * | 2010-06-28 | 2010-12-01 | 启东吉莱电子有限公司 | 可控硅生产工艺 |
CN101901832A (zh) * | 2010-06-28 | 2010-12-01 | 启东吉莱电子有限公司 | 一种镓扩散形成可控硅穿通结构及其生产方法 |
CN201804873U (zh) * | 2010-06-28 | 2011-04-20 | 启东吉莱电子有限公司 | 一种减少穿通时间的可控硅结构 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104779156A (zh) * | 2014-01-13 | 2015-07-15 | 中芯国际集成电路制造(上海)有限公司 | 铝残留的去除方法 |
CN104779156B (zh) * | 2014-01-13 | 2017-10-17 | 中芯国际集成电路制造(上海)有限公司 | 铝残留的去除方法 |
CN105448807A (zh) * | 2015-11-20 | 2016-03-30 | 浙江正邦电力电子有限公司 | 一种半导体器件芯片对通隔离制造工艺 |
CN105448807B (zh) * | 2015-11-20 | 2017-11-10 | 浙江正邦电子股份有限公司 | 一种半导体器件芯片对通隔离制造工艺 |
CN114005743A (zh) * | 2021-10-13 | 2022-02-01 | 华中科技大学 | 一种方片半导体脉冲功率开关及其制备方法 |
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CN103151263B (zh) | 2015-08-19 |
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Address after: 321400 Zhejiang County of Jinyun city of Lishui Province East five East Industrial Zone Zhejiang Zhengbang Power Electronics Co Ltd Patentee after: ZHEJIANG ZHENGBANG ELECTRONIC CO.,LTD. Address before: 321400 Zhejiang County of Jinyun city of Lishui Province East five East Industrial Zone Zhejiang Zhengbang Power Electronics Co Ltd Patentee before: ZHEJIANG ZHENGBANG ELECTRIC POWER ELECTRONICS Co.,Ltd. |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A method for preparing thyristor chips Granted publication date: 20150819 Pledgee: Lishui Jinyun Sub branch of Zhejiang Tailong Commercial Bank Co.,Ltd. Pledgor: ZHEJIANG ZHENGBANG ELECTRONIC CO.,LTD. Registration number: Y2024980007381 |