CN103078052A - Nano-diamond coating package substrate - Google Patents
Nano-diamond coating package substrate Download PDFInfo
- Publication number
- CN103078052A CN103078052A CN2013100156886A CN201310015688A CN103078052A CN 103078052 A CN103078052 A CN 103078052A CN 2013100156886 A CN2013100156886 A CN 2013100156886A CN 201310015688 A CN201310015688 A CN 201310015688A CN 103078052 A CN103078052 A CN 103078052A
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- China
- Prior art keywords
- coated
- nano diamond
- nano
- graphite flake
- diamond coating
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The invention discloses a nano-diamond coating package substrate, which is high in heat conductivity, low in heat resistance, high in reliability, low in cost, improved in LED (Light Emitting Diode) light-emitting efficiency and prolonged in service life. According to the nano-diamond coating package substrate, a graphite flake is used as a carrier, a nano-diamond coating layer is introduced onto the surface of the graphite flake, organic silica gel is arranged on the upper surface of the nano-diamond coating layer, the organic silica gel is distributed at two sides of the nano-diamond coating layer, a conductive welding plate is arranged on the organic silica gel, one or more LED chips are arranged on the nano-diamond coating layer, the LED chips are positioned between conductive welding plates at two sides, the LED chips are connected with the conductive welding plates through interconnecting wires, and the LED chips are adhered on the nano-diamond coating layer through chip heat-conduction gel. The nano-diamond coating package substrate disclosed by the invention has the advantages of enhancing the hardness of a package surface by carrying out a nano-diamond coating process on the package surface, enhancing the light reflectivity and being good in heat dissipation effect.
Description
Technical field
The present invention relates to a kind of LED base plate for packaging, particularly a kind of high-power LED chip package coated by Nano diamond substrate.
Background technology
The LED heat-radiating substrate mainly is to utilize its heat-radiating substrate material itself to have better heat conductivity, and thermal source is derived from LED crystal grain.Therefore; we are from the narration of LED heat radiation approach; can be with LED heat-radiating substrate segmentation two large classifications; be respectively (1) LED crystal grain substrate and (2) system circuit board; these two kinds of different heat-radiating substrates are taken advantage of respectively and are carried the heat energy that LED crystal grain and LED wafer produce when LED crystal grain is luminous;, then absorbed by atmospheric environment to system circuit board via LED crystal grain heat-radiating substrate, to reach the loose effect of heat.
Promote LED luminous efficiency and useful life, solve LED product heat dissipation problem and be one of most important problem of present stage, the development of LED industry also is as its development priority take high power, high brightness, small size LED product, therefore, provide and have its high-cooling property, precise measure does not have the crooked heat-radiating substrate of heat, becomes following trend in the development of LED heat-radiating substrate yet.Existing LED structure of heat dissipation substrate is complicated, and the more heat-conducting effect of heat conductive insulating layer are poorer; The hardness of graphite material own is inadequate, and the substrate package face does not deal with, and die bond is unreliable.
Summary of the invention
The objective of the invention is in order to solve weak point of the prior art, a kind of high thermal conductivity, low thermal resistance, high reliability, low-cost coated by Nano diamond base plate for packaging are provided, promote LED luminous efficiency and useful life, solve LED product heat dissipation problem.
For achieving the above object, the present invention adopts following scheme:
A kind of coated by Nano diamond base plate for packaging, include graphite flake, with graphite flake as carrier, a coated by Nano diamond layer is introduced on the graphite flake surface, the coated by Nano diamond layer is the nanoscale diamond synthesis, be provided with organic silica gel above the coated by Nano diamond layer, organic silica gel is distributed in coated by Nano diamond layer both sides, organic silica gel is provided with the conduction welding plate, the coated by Nano diamond layer is provided with one and above led chip, led chip is located between the conduction welding plate of both sides, led chip connects the conduction welding plate by interconnection line, led chip sticks on the coated by Nano diamond layer by the chip heat-conducting glue, introduces packaging plastic on led chip and the interconnection line, and graphite flake thickness is 0.012-1.0mm.
Among some embodiment, described conduction welding plate is Copper Foil, is electrically connected with the external world therein.
Among some embodiment, described graphite flake surface adopts coated by Nano diamond technique to be coated with a coated by Nano diamond layer therein, and the graphite flake case hardness behind the plated film reaches 80GPa.
Among some embodiment, bonding by organic silica gel between described conduction welding plate and the coated by Nano diamond layer therein.
Among some embodiment, connect by interconnection line between described led chip is adjacent therein, packaging plastic is kept same plane with the conduction welding plate of projection.
The present invention adopts graphite as the LED base plate for packaging, reduces thermal resistance, promotes thermal conductivity; Package surface is carried out coated by Nano diamond technique, strengthens encapsulating face hardness, strengthens luminous reflectanc.The LED heat-radiating substrate mainly is to utilize its heat-radiating substrate material itself to have better heat conductivity, and thermal source is derived from LED crystal grain.Therefore, the present invention starts with from LED heat radiation approach, and the heat energy that produces when LED crystal grain is luminous, is then absorbed by atmospheric environment to system circuit board via LED crystal grain heat-radiating substrate, to reach the loose effect of heat.
Description of drawings
It is the structural representation of embodiment of the present invention shown in Fig. 1.
It is the schematic diagram that the embodiment of the present invention single-chip package is used shown in Fig. 2.
It is the schematic diagram that the embodiment of the present invention multi-chip package is used shown in Fig. 3.
Embodiment
Be concrete order ground, the function that further to understand feature of the present invention, technological means and reach, resolve the advantages and spirit of the present invention, by the present invention is further elaborated by the following examples.
The development of LED industry also is take high power, high brightness, small size LED product as its development priority, therefore, provides to have its high-cooling property, and precise measure does not have the crooked heat-radiating substrate of heat, becomes following trend in the development of LED heat-radiating substrate yet.
As shown in Figures 1 to 3, the present invention with graphite flake 1 as carrier, a coated by Nano diamond layer 2 is introduced on graphite flake 1 surface, graphite flake 1 surface adopts coated by Nano diamond technique to be coated with a coated by Nano diamond layer 2, coated by Nano diamond layer 2 is the nanoscale diamond synthesis, and graphite flake 1 case hardness behind the plated film reaches 80GPa; The coated by Nano diamond layer is provided with organic silica gel 3, and organic silica gel 3 is distributed in coated by Nano diamond layer 2 both sides, and organic silica gel 3 is provided with conduction welding plate 4, and is bonding by organic silica gel 3 between conduction welding plate 4 and the coated by Nano diamond layer 2.
With graphite flake 1 as carrier, utilize graphite flake 1 high thermal conductivity coefficient in the horizontal direction, reach better heat conduction, graphite flake 1 coefficient of heat conduction planar conductive reaches 300-1200W/m.k, thermal resistance is than aluminium low 40%, lower by 20% than copper, thus graphite heat radiation fin is by being evenly distributed in heat two dimensional surface effectively with transfer of heat, and the assurance high-power chip is worked under the temperature of bearing.
Consider the particularity of graphite itself, the present invention adopts coated by Nano diamond technique that its graphite flake 1 case hardness is strengthened, coated by Nano diamond layer 2 has that superhard, wear-resisting, high insulation, high thermal conductivity, coefficient of friction are low, even film layer, density is high, corrosion-resistant and the adhesive force high, graphite flake case hardness behind the plated film reaches 80GPa, resistance to wear promotes more than 100 times, this film water white transparency does not exert an influence to the optical characteristics of material.Because coated by Nano diamond layer 2 has good grinding performance, the graphite flake 1 surface reflection rate behind the plated film is high, promotes LED optics utilance.
Be provided with organic silica gel 3 at coated by Nano diamond layer 2, organic silica gel 3 is distributed in coated by Nano diamond layer 2 both sides.Organic silica gel 3 is provided with conduction welding plate 4, and is bonding by organic silica gel 3 between conduction welding plate 4 and the coated by Nano diamond layer 2.Conduction welding plate 4 on coated by Nano diamond layer 2 base plate for packaging is Copper Foil, is electrically connected with the external world.Adopt the graphite substrate of coated by Nano diamond layer 2 as the base plate for packaging of high-power chip, heat conduction is fast, performance good, and reliability is high, cost is low.
Be coated with Nano diamond on the graphite flake 1, graphite flake 1 utilizes graphite flake 1 high thermal conductivity coefficient in the horizontal direction as carrier, reaches better heat conduction; With coated by Nano diamond technique its substrate package surface hardness is strengthened.The present invention than aluminium base, copper base, the ceramic substrate thermal resistance is lower, thermal conductivity is higher, processing simple and easy, with low cost.
The above embodiment has only expressed the specific embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that the technology for this area, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (5)
1. coated by Nano diamond base plate for packaging, include: graphite flake (1), with graphite flake (1) as carrier, it is characterized in that, a coated by Nano diamond layer (2) is introduced on described graphite flake (1) surface, described coated by Nano diamond layer 2 is the nanoscale diamond synthesis, be provided with organic silica gel (3) above the described coated by Nano diamond layer (2), described organic silica gel (3) is distributed in coated by Nano diamond layer (2) both sides, described organic silica gel (3) is provided with conduction welding plate (4), described coated by Nano diamond layer (2) is provided with one and above led chip (8), described led chip (8) is located between the both sides conduction welding plates (4), described led chip (8) connects described conduction welding plate (4) by interconnection line (5), described led chip (8) sticks on the coated by Nano diamond layer (2) by chip heat-conducting glue (7), introduce packaging plastic (6) on described led chip (8) and the interconnection line (5), described graphite flake (1) thickness is 0.012-1.0mm.
2. coated by Nano diamond base plate for packaging according to claim 1 is characterized in that, described conduction welding plate (4) is Copper Foil, is electrically connected with the external world.
3. coated by Nano diamond base plate for packaging according to claim 1, it is characterized in that, described graphite flake (1) surface adopts coated by Nano diamond technique to be coated with a coated by Nano diamond layer (2), and the graphite flake behind the plated film (1) case hardness reaches 80GPa.
4. coated by Nano diamond base plate for packaging according to claim 1 is characterized in that, and is bonding by organic silica gel (3) between described conduction welding plate (4) and the coated by Nano diamond layer (2).
5. coated by Nano diamond base plate for packaging according to claim 1 is characterized in that, connects by interconnection line (5) between described led chip (8) is adjacent, and described packaging plastic (6) is kept same plane with the conduction welding plate (4) of projection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100156886A CN103078052A (en) | 2013-01-16 | 2013-01-16 | Nano-diamond coating package substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100156886A CN103078052A (en) | 2013-01-16 | 2013-01-16 | Nano-diamond coating package substrate |
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| CN103078052A true CN103078052A (en) | 2013-05-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2013100156886A Pending CN103078052A (en) | 2013-01-16 | 2013-01-16 | Nano-diamond coating package substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014206003A1 (en) * | 2013-06-26 | 2014-12-31 | 合肥京东方光电科技有限公司 | Light bar, backlight module, and display apparatus |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080029883A1 (en) * | 2002-10-11 | 2008-02-07 | Chien-Min Sung | Diamond composite heat spreaders having low thermal mismatch stress and associated methods |
| CN101545587B (en) * | 2009-06-08 | 2010-09-01 | 刘素霞 | A preparation method of high-performance heat-radiating semiconductor planar light source |
| CN202003978U (en) * | 2011-01-24 | 2011-10-05 | 陈鸿文 | Heating component heat-conducting base structure with diamond heat-conducting thick film |
| CN202274442U (en) * | 2011-10-22 | 2012-06-13 | 华南师范大学 | Light-emitting diode heat-dissipation base with good heat conduction |
| CN102555321A (en) * | 2010-12-28 | 2012-07-11 | 上海杰远环保科技有限公司 | High heat dissipation membrane of laminated diamond coating and manufacturing method of high heat dissipation membrane |
-
2013
- 2013-01-16 CN CN2013100156886A patent/CN103078052A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080029883A1 (en) * | 2002-10-11 | 2008-02-07 | Chien-Min Sung | Diamond composite heat spreaders having low thermal mismatch stress and associated methods |
| CN101545587B (en) * | 2009-06-08 | 2010-09-01 | 刘素霞 | A preparation method of high-performance heat-radiating semiconductor planar light source |
| CN102555321A (en) * | 2010-12-28 | 2012-07-11 | 上海杰远环保科技有限公司 | High heat dissipation membrane of laminated diamond coating and manufacturing method of high heat dissipation membrane |
| CN202003978U (en) * | 2011-01-24 | 2011-10-05 | 陈鸿文 | Heating component heat-conducting base structure with diamond heat-conducting thick film |
| CN202274442U (en) * | 2011-10-22 | 2012-06-13 | 华南师范大学 | Light-emitting diode heat-dissipation base with good heat conduction |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014206003A1 (en) * | 2013-06-26 | 2014-12-31 | 合肥京东方光电科技有限公司 | Light bar, backlight module, and display apparatus |
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Effective date of abandoning: 20170201 |
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